The invention relates to the technical field of chemical mechanical
polishing of semiconductors, in particular to a preparation method of low-specific-surface-area silica
sol, which comprises the following steps: adding pure water into crude silica
sol prepared by taking alkoxy
silane as a
silicon source, and stirring at
low vacuum degree to obtain the low-specific-surface-area silica
sol, the
mass ratio of the added pure water is w, the vacuum degree is v / MPa, the temperature is T / DEG C, the stirring duration is t / h, and the following relational expression is met: 0.02 < = 300 * w * v / (t * logT) < = 0.04; wherein the
mass ratio w of the added pure water is 6-35%, w = the
mass of the pure water / the mass of the crude silica sol * 100%, the vacuum degree v is 0.005-0.03 MPa, the temperature T is 70-95 DEG C, and the stirring time t is 8-12 h. The post-treatment process is added, and the
mass ratio w of the added pure water, the vacuum degree v, the temperature T and the stirring duration t are controlled to meet a certain relationship, so that the
alcohol content of the
system can be reduced on the basis of reducing the specific surface area of the
silicon dioxide particles, and the silica sol with higher
polishing efficiency and better
polishing effect is obtained.