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52 results about "Abrasive agent" patented technology

Chemical planarization

Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
Owner:CHEMPOWER CORP

Titanium oxide-based chemical mechanical polishing composition for highly boron doped silicon films

The present invention provides a chemical mechanical polishing composition comprising: (a) a titanium oxide abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical mechanical polishing composition has a pH of about 7 or less. The invention also provides a method for chemical mechanical polishing of a substrate, in particular a substrate comprising a boron-doped polycrystalline silicon layer on a surface of the substrate, using the composition.
Owner:ENTEGRIS INC

Long-time high-rate tungsten chemical mechanical polishing solution and application thereof

ActiveCN117947422BPtru catalystAbrasive agent
The application discloses a long-time high-speed tungsten chemical mechanical polishing liquid and application thereof. The tungsten chemical mechanical polishing liquid comprises the following components in mass percentage: 0.1-5% of abrasive, 0.5-5% of oxidant, 0.001-0.05% of tungsten catalyst, 0.01-0.05% of stabilizer, 0.005-0.05% of surface quality improver, 0.001-0.003% of oxidase, and the balance is deionized water. The tungsten chemical mechanical polishing liquid has the characteristics of long-time high speed and good surface quality.
Owner:WANHUA CHEM GRP CO LTD

CMP slurry composition for patterned tungsten wafer and method of polishing patterned tungsten wafer using the same

A CMP slurry composition for patterned tungsten wafers and a method of polishing patterned tungsten wafers using the same, the CMP slurry composition includes a solvent; an abrasive; and a non-dendrimeric poly(amidoamine).
Owner:SAMSUNG SDI CO LTD

Porous spherical silica, catalyst carrier, cosmetic, analytical column, abrasive, resin composition, and method for producing porous spherical silica

Provided are: an independently spherical porous spherical silica having a reduced alkali metal content, high particle hardness, and a reduced number of fragmented particles; and a method for producing the porous spherical silica. A porous spherical silica having a volume-based cumulative 50% particle diameter (D50) of 2 [mu] m to 200 [mu] m, a ratio (D10 / D90) of a cumulative 10% particle diameter (D10) to a cumulative 90% particle diameter (D90) of 0.3 or more, a pore volume of 0.5 ml / g to 8 ml / g, a mode of a pore radius of 5 nm to 50 nm, and a specific surface area of 50 m2 / g to 400 m2 / g, the arithmetic mean value of the'test force at the time of confirmation of sample breakage 'determined according to the method specified in JIS Z8844 is 1.0 * 101 mN to 2.0 * 101 N (inclusive), the number of particles having a circularity of 0.7 or less is 20 or less, and the alkali metal content is 50 ppm or less.
Owner:TOKUYAMA CORP

Silica-based slurry for selective polishing of carbon-based films

This invention provides a chemical mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical mechanical polishing composition. This invention also provides a method for chemically mechanically polishing a substrate, particularly a substrate comprising a carbon-based film, using the said composition.
Owner:CMC MATERIALS INC

A wide belt saw blade processing tooth base grinding machine

This invention discloses a tooth grinding machine for wide-width band saw blade processing, including limiting plates and a workpiece processing mechanism. A saw blade body portion is inserted between two limiting plates, and each limiting plate has an inclined hole on its side. The inclined hole faces opposite directions to the tooth grooves on the saw blade body. The bottom end of the limiting plate extends into the material collection hopper. The advantages of this invention are: during the feeding process, the abrasive is also driven to rotate by the processing actuator, which can fully fill the gap formed between the annular surface in the middle of the processing actuator and the inner wall of the tooth groove, thus achieving the effect of abrasive grinding the inner wall of the tooth groove. The abrasive is fed in a state of simultaneous movement and rotation, resulting in a finer and smoother grinding surface; it fully utilizes the abrasive, reducing the number of times it needs to be added; and it can automatically adjust and position the tooth grooves on the saw blade body, allowing for rapid adjustment to the grinding state.
Owner:江苏美特森切削工具有限公司

CMP slurry for reducing polishing pad wear rate

A chemical mechanical polishing (“CMP”) slurry is designed and configured for reducing polishing pad wear rate. The CMP slurry includes at least one oxidizer, a primary abrasive, a solvent, and a secondary abrasive. The secondary abrasive is a mixture of chemicals that yield a stable suspension of the CMP slurry. The CMP slurry for reducing polishing pad wear rate is designed and configured to provide a pad wear rate of less than 2.0% at a 1-hour polishing time, and / or a pad wear rate of less than 10.0% at a 4-hour polishing time.
Owner:PUREON INC

Soluble Metal Oxide Anion CMP Slurry

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates comprising: a solvent; at least one abrasive with a Mohs hardness of at least 8; and at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.
Owner:DUPONT ELECTRONIC MATERIALS HLDG INC

High rate tungsten plug chemical mechanical polishing solution and use thereof

The application discloses a high-speed tungsten plug chemical mechanical polishing solution and application thereof. The tungsten plug chemical mechanical polishing solution comprises the following components in mass percentage: 2-20% of abrasive, 0.5-5% of oxidant, 0.01-0.5% of tungsten catalyst, 0.01-0.05% of rate accelerator, and the balance is deionized water. The tungsten plug chemical mechanical polishing solution has the characteristics of fast polishing rate, good surface quality and excellent stability.
Owner:WANHUA CHEM GRP ELECTRONIC MATERIALS CO LTD

Polishing slurry and method of manufacturing semiconductor device

Disclosed are a polishing slurry and a method of manufacturing a semiconductor device using the same, the polishing slurry including a first histidine derivative including an abrasive, an oxidizing agent, and a substituted or unsubstituted cyclic imide group.
Owner:SAMSUNG ELECTRONICS CO LTD

Method for manufacturing display device, display device manufactured thereby, and electronic device including the same

A method for manufacturing a display device may include providing a support layer and a display panel on a digitizer. The display panel may include a folding region that is folded with reference to a folding axis extending in a first direction. The providing of the support layer may include forming an opening penetrating the preliminary support layer by providing a laser or an abrasive agent to one surface of the preliminary support layer. A first width of the opening on the one surface in a second direction and a second width of the opening on another surface in a second direction may be different from each other, and the second direction is perpendicular to the first direction.
Owner:SAMSUNG DISPLAY CO LTD

Self-stopping polishing compositions and methods for high topography selectivity

The invention provides a chemical mechanical polishing composition comprising: (a) an abrasive selected from ceria abrasive, zirconia abrasive, and combinations thereof; (b) a self-stoppage agent selected from compounds of Formula (I); (c) optionally, a non-ionic polymer; (d) a cationic monomeric compound; and (e) water, wherein the pH of the polishing composition is from about 5.5 to about 8. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using the composition.
Owner:CMC MATERIALS INC

Multi-effect nursing toothpaste with cream texture and preparation method thereof

The invention belongs to the field of cosmetics, particularly relates to the field of A61K8 / 03, and more particularly relates to multi-effect nursing toothpaste with cream texture and a preparation method thereof. The multi-effect nursing toothpaste with the cream texture is prepared from the following raw materials: a phase A, a phase B and a phase C, wherein the mass ratio of the phase A to the phase B to the phase C is (20-50): (30-50): (0.0001-1); wherein the phase A comprises water and a humectant, and the phase B comprises a thickening agent, a foaming agent, an aromatic, an antibacterial agent, a sweetening agent, an antioxidant, a friction agent and functional inorganic salt; the thickening agent comprises super micro-crosslinked polyquaternium-22, and the molecular weight of the thickening agent is greater than 1000000; the functional inorganic salt at least comprises sodium monofluorophosphate; the C phase includes a colorant. The multi-effect nursing toothpaste with the cream texture, provided by the invention, not only can realize the technical effects of rapid sterilization and long-acting bacteriostasis, but also can repair enamel, improve gingival bleeding and relieve tooth sensitivity, and has more effects and higher cost performance compared with similar products in the market.
Owner:SHANGHAI MANGE TECH CO LTD

Guanidinium-based polyionic liquids and their use as additives for chemical mechanical planarization slurries

Synthesis of guanidinium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising guanidinium-based polymers; and water. The use of the synthesized guanidinium-based polymers in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.
Owner:VERSUM MATERIALS US LLC

Oil-film-removing automobile windshield washer fluid based on nanometer grinding composite technology and preparation method of oil-film-removing automobile windshield washer fluid

The invention discloses an automobile windshield washer fluid capable of removing an oil film based on a nanometer grinding composite technology and a preparation method of the automobile windshield washer fluid. The preparation method comprises the following steps: S1, stirring and dispersing a water-phase thickening agent and an inorganic gel into part of deionized water, and fully hydrating to form a uniform basic gel solution which is marked as a water phase A; s2, performing high-shear pre-dispersion on a nano-scale or micron-scale grinding agent and a part of alcohol antifreezing agent to form uniform slurry, and then adding the slurry, a nonionic surfactant and a glycol ether solvent into the water phase A together to obtain an active phase B; s3, adding the remaining antifreezing agent and deionized water into the active phase B, adjusting the pH value to 7.0-8.5, and fixing the volume to obtain the automobile windshield washer fluid with the oil film removed. According to the automobile windshield washer fluid capable of removing the oil film, cleaning can be rapidly and thoroughly achieved through the chemical-physical-solvent triple synergistic effect, and the cleaning efficiency is far higher than that of common windshield washer fluid; meanwhile, the functions of cleaning, oil film removal, freezing prevention, fog prevention and maintenance are integrated, and diversified requirements can be met.
Owner:CNPC COSCO ENERGY INTERNATIONAL IMPORT & EXPORT ANHUI CO LTD

Composition for tungsten chemical mechanical polishing

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water-based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron-containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
Owner:CMC MATERIALS INC

AUTOMATED SYSTEM AND METHOD FOR CONTROLLED SURFACE REMOVAL OF DEFECTS IN CAST METALLIC ANODES PRIOR TO ELECTROREFINING

PendingMX2026005504AElectrolysisUltra high voltage
The present invention relates to an automated system (100) and an automated method (300) for controlled surface removal of defects on cast metal anodes (110) prior to electrorefining, including anodes of copper, nickel, lead, or other electrochemically refinable metals. The system comprises a detection system (130), a surface removal head (140), a surface removal module or tool (141), a relative displacement system (150), a control unit (170), and optionally, a collection or extraction system (160). The control unit (170) obtains surface information from the anode, determines a surface conditioning zone (120), commands general surface removal, and subsequently determines localized zones with surface defects or residual contaminants (121) for selective surface removal.The surface removal module or tool (141) may comprise a mechanical tool, an abrasive tool, a pressure water nozzle, a very high pressure water nozzle, or a combination thereof, including cleaning with water without added abrasive. In one embodiment, the system integrates milling or conditioning of upper lugs (112) to prepare electrical contact surfaces prior to electrorefining.
Owner:JESÚS PADILLA GUTIÉRREZ +1

Non-aqueous non-oily tooth powder containing bioactive glass and preparation method therefor

PCT designated stageWO2026145749A1High concentrationFoaming agent
A non-aqueous non-oily tooth powder containing bioactive glass, comprising, in weight percentage, the following raw materials: abrasive agent: 40%-95%; bioactive glass: 0.3%-50%; foaming agent: 1%-10%; fragrance: 0%-10%; and pigment: 0%-5%. The tooth powder contains neither water nor an oily carrier, and thus not only maintains a high concentration of the abrasive agent to provide strong cleaning and decontamination capabilities, but also does not affect the performance of the bioactive glass, enabling the tooth powder to have good efficacy in occluding dentinal tubules and repairing tooth enamel. The method for preparing the tooth powder is simple and convenient, requiring only the mixing of the various raw materials in dry powder form.

A cleaning device for grinding bearing steel balls

This utility model relates to the field of metal surface treatment technology, specifically to a cleaning device for grinding bearing steel balls. It includes a sealed base, with a mesh frame installed on the upper part of the sealed base. A transmission pipe for transporting steel balls is connected to the upper rear of the mesh frame. The portion of the transmission pipe that penetrates the sealed base is a through-hole, and this through-hole is designed at an angle. A discharge port is opened in the lower part of the mesh frame, and a cleaning brush assembly is installed inside the mesh frame. By combining the cleaning brush assembly with an ultrasonic isolation chamber, the abrasive and metal debris on the surface of the steel balls are thoroughly removed. The vortex-like motion of the brush rollers, combined with the solution sprayed from the high-pressure nozzle, effectively removes larger particles of contaminants, while the cavitation effect generated by the ultrasound further removes microscopic contaminants. The angled design of the transmission pipe ensures that the steel balls are evenly distributed when entering the mesh frame, avoiding accumulation and thus improving cleaning efficiency. An electric push rod and a baffle can precisely control the discharge process of the steel balls when needed.
Owner:SUQIAN SHUFEI IND CO LTD

Abrasive, polishing method, and method for manufacturing semiconductor components

ActiveJP7885871B2MetallurgyAbrasive agent
Provided is a polishing agent, a polishing method, and a method for manufacturing a semiconductor component that exhibit a good polishing speed in CMP of a surface to be polished, said surface including boron-doped silicon. The polishing agent according to the present invention is for polishing a surface to be polished, said surface including boron-doped silicon, the polishing agent including abrasive grain, an oxidant, and water, the oxidant including at least one type that is selected from a peroxide oxidant, a metal ion oxidant, and a halogen oxo acid ion oxidant.
Owner:AGC INC

Post-CMP cleaning composition and post-CMP cleaning method

There are provided a post-CMP cleaning composition and a post-CMP cleaning method, which can more efficiently reduce cerium remaining on a surface of polished objects to be polished.The post-CMP cleaning composition is used for cleaning polished objects to be polished as objects to be polished, which has been subjected to a chemical mechanical polishing (CMP) using a polishing composition containing a cerium compound as abrasives, the post-CMP cleaning composition containing silica and a water-soluble polymer. A concentration of the silica is 0.5% by mass or more and 10% by mass or less.
Owner:FUJIMI INCORPORATED

Slurry composition for a chemical mechanical polishing

A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TiN layer.
Owner:SK HYNIX INC +1

Porous spherical silica, catalyst carrier, cosmetic, analytical column, abrasive, resin composition, and method for producing porous spherical silica

Provided are: an independently spherical porous spherical silica having a reduced alkali metal content, high particle hardness, and a reduced number of fragmented particles; and a method for producing the porous spherical silica. A porous spherical silica having a volume-based cumulative 50% particle diameter (D50) of 2 [mu] m to 200 [mu] m, a ratio (D10 / D90) of a cumulative 10% particle diameter (D10) to a cumulative 90% particle diameter (D90) of 0.3 or more, a pore volume of 0.5 ml / g to 8 ml / g, a mode of a pore radius of 5 nm to 50 nm, and a specific surface area of 50 m2 / g to 400 m2 / g, the arithmetic mean value of the'test force at the time of confirmation of sample breakage 'determined according to the method specified in JIS Z8844 is 1.0 * 101 mN to 2.0 * 101 N (inclusive), the number of particles having a circularity of 0.7 or less is 20 or less, and the alkali metal content is 50 ppm or less.
Owner:TOKUYAMA CORP

Chemical-mechanical polishing composition for silver polishing

PCT designated stageWO2026080623A1Other chemical processesLapping machinesChemical MoietyAlcohol
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a silica abrasive, an alumina abrasive, and a combination thereof, (b) a polishing promoter compound comprising (i) at least two nitrogen atoms and (ii) at least two chemical moieties selected from a phosphonic acid, a carboxylic acid, an alcohol, an anhydride, and a combination thereof, (c) a topography control agent comprising a nonionic polymer, an anionic polymer, or a combination thereof, (d) a corrosion inhibitor, and (e) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silver, using said composition.
Owner:ENTEGRIS INC

Method for processing microalgae

A method of processing microalgae comprising: adding an inert abrasive agent to a microalgae biomass; and agitating the mixture to lyse the microalgal cells. The abrasive agent may be diatomaceous earth, diatomite, celite, kieselguhr. The microalgae may have not been previously frozen. The microalgae may be of the Spirulina genus (Arthrospira platensis). The method may further comprise separating water-soluble compounds from the mixture. The mixture may be dried to form a cake and contacted with a liquid such as water to leach water-soluble components into the liquid. The liquid may comprise phycocyanin. The liquid may be water. The liquid may be filtered. The method may comprise further steps of removing bacteria, concentrating or purifying the phycocyanin, and spray-dying the phycocyanin solution. The method may comprise a further step of separating the microalgae from the abrasive agent. A preservative may be added to the microalgal contents. Also claimed are compositions comprising microalgal cellular contents. The composition may comprise phycocyanin. Also claimed are uses of the composition as a pigment, colourant, biostimulant or fertiliser. [Fig. 4]
Owner:NELSON MANDELA METROPOLITAN UNIV

Chemical-mechanical polishing composition for silver polishing

The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a silica abrasive, an alumina abrasive, and a combination thereof, (b) a polishing promoter compound comprising (i) at least two nitrogen atoms and (ii) at least two chemical moieties selected from a phosphonic acid, a carboxylic acid, an alcohol, an anhydride, and a combination thereof, (c) a topography control agent comprising a nonionic polymer, an anionic polymer, or a combination thereof, (d) a corrosion inhibitor, and (e) water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silver, using said composition.
Owner:ENTEGRIS INC

Oral care mousse compositions and products thereof

PCT designated stageWO2026143155A1Mouth careActive agent
Oral care compositions, particularly oral care mousse compositions, as well as oral care products thereof are disclosed herein. In accordance with one aspect, provided is an oral care product comprising: an oral care package comprising a vessel portion and a nozzle; and an oral care composition disposed in the vessel portion, the oral care composition comprising: from about 10 to about 43 wt.% of an abrasive; a surfactant system comprising: an amphoteric surfactant, and a nonionic surfactant; and a thickening system comprising: a natural gum, and an acrylic acid polymer, wherein the oral care composition has a stress drop of about 18 to about 60% and an adhesive force of about 60 to about 200 gram-force, and wherein all weight percentages are based on the total weight of the oral care composition.
Owner:COLGATE PALMOLIVE CO

Dispersion and abrasive compositions

The present invention relates to a dispersant and a polishing agent composition. In a chemical mechanical polishing dispersant used in surface planarization of at least either of an insulating layer and a wiring layer, a block copolymer (P) having a polymer block A and a polymer block B is contained. The block copolymer (P) is as described below. (1) The polymer block A has a structural unit derived from at least one selected from the group consisting of an amide group-containing vinyl monomer and an ester group-containing vinyl monomer, and the polymer block B has a structural unit having an ionic functional group. (2) The polymer blocks A, B have a structural unit having an ionic functional group, and the block copolymer (P) satisfies at least one of Condition I and Condition II. (3) The polymer blocks A, B have a structural unit derived from a vinyl monomer represented by Formula (1). Formula (1): CH2=CR 1 -C(=O)-NR 2 -R 3 .
Owner:TOAGOSEI CO LTD