The invention discloses an
etching solution and a preparation method and an
etching method thereof, and belongs to the technical field of
microelectronics and display panel manufacturing. The
etching liquid comprises the following components in percentage by
mass: 50-70% of
phosphoric acid, 5-30% of
acetic acid, 5-15% of
nitric acid, 0.1-0.5% of a water-
soluble polymer, 0.05-0.3% of a
boron-containing compound, 0.05-0.5% of an etching control agent and the balance of water. The water-
soluble polymer is selected from one or more of water-soluble polymers containing a hydroxyl group, an
amide group, an
ether bond or a pyrrolidone group. The etching solution contains a specific water-
soluble polymer, a protective layer can be formed on the surface of the
photoresist,
attack of high-concentration acid to the etching solution is effectively inhibited, and the
cracking problem is avoided; meanwhile, through the synergistic effect of the
boron-containing compound and the
azole etching control agent, the
etching rate, the
slope angle and the
key size loss can be accurately controlled, and therefore the excellent etching morphology meeting the requirement is obtained.