4518 results about "Thin-film transistor" patented technology

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

The invention relates to the technical field of data processing of organic display panels, in particular to a dynamic compensation method for driving signals of an organic display panel, which comprises the following steps of: acquiring brightness data in parallel by a photoelectric sensor array in different regions, and synchronously acquiring threshold voltage offset and environment temperature parameters of a thin film transistor; and after noise filtering, inputting into an aging feature extraction module and storing in a historical database. In the feature extraction stage, convolution kernel aggregation threshold voltage data is utilized to generate a regional aging coefficient matrix, the weight of a convolution kernel is dynamically adjusted based on a lightweight neural network, and an aging feature model is optimized in combination with real-time temperature parameters. The real-time problem of pixel-level compensation in a high-resolution scene is solved, and the calculation load of an embedded system is reduced.

A display module includes a substrate including a mounting surface and a side surface; a Thin Film Transistor (TFT) layer provided on the mounting surface of the substrate; a plurality of inorganic light emitting diodes mounted on the mounting surface of the substrate; an anisotropic conductive layer provided on an upper surface of the TFT layer and electrically connecting the TFT layer to the plurality of inorganic light emitting diodes; a front cover covering the mounting surface; and a side cover surrounding the side surface. A side end of the front cover extends to a region outside the mounting surface, and the side cover is bonded to a lower surface of the front cover and to the side surface of the substrate which correspond to the region outside of the mounting surface.

A display substrate and a display device relate to the technical field of display. The display substrate comprises a plurality of sub-pixels, and each sub-pixel comprises a thin film transistor. The display substrate comprises a substrate, a first conductive layer, a semiconductor layer, a first insulating layer and a second conductive layer, the first conductive layer, the semiconductor layer, the first insulating layer and the second conductive layer are sequentially stacked on one side of the substrate, the first conductive layer is close to the substrate and comprises a data line, and the semiconductor layer comprises a plurality of semiconductor patterns located at different sub-pixels. The semiconductor pattern comprises a source electrode connection region, a first conductor region and a channel region which are arranged along a first direction and are connected in sequence, and the second conductive layer comprises a first switching pattern and a grid electrode; wherein the first insulating layer is provided with a first via hole, the first via hole exposes a part of the data line, the source electrode connecting area and the first conductor area, the data line and the source electrode connecting area are in lap joint with the first switching pattern through the first via hole, and the orthographic projection of the first switching pattern and the orthographic projection of the first conductor area on the substrate are not overlapped.

The invention discloses a semiconductor device based on two-dimensional semi-metal interface optimized contact and a preparation method thereof, which are applied to devices including a two-dimensional semiconductor-based metal-semi contact structure, such as thin film transistors, Schottky junction diodes / transistors and the like. According to the invention, the two-dimensional semi-metal interface layer is introduced between the metal electrode (source and drain electrodes) and the two-dimensional material (conductive channel) through PVD and CVD processes, so that pollution and defects caused by additional transfer steps are avoided, preparation of the interface layer with large area, high uniformity and controllable thickness can be realized, and industrial requirements are met. According to the semiconductor device provided by the invention, the two-dimensional semimetal is introduced as the interface layer, so that the contact resistance between the source and drain electrodes and the conductive channel is obviously optimized, Fermi level pinning is eliminated, and the adjustable Schottky barrier height is realized; and a brand new solution is provided for development and industrial application of a metal-semiconductor contact structure device of a high-performance two-dimensional semiconductor.

A display substrate, a method of manufacturing a display substrate, and an electronic device are provided. The display substrate includes: a base substrate; a thin film transistor arranged on the base substrate; a first planarization layer arranged on a side of the thin film transistor away from the base substrate; a first protective layer arranged on a side of the first planarization layer away from the base substrate; a first conductive layer arranged on a side of the first protective layer away from the base substrate; and a second planarization layer arranged on a side of the first conductive layer away from the base substrate, wherein the display substrate is provided with a first via hole penetrating the first protective layer, and the first planarization layer is in contact with the second planarization layer through the first via hole.

Provided is a thin film transistor unit. The thin film transistor unit includes a first gate, a first gate insulating layer, a first semiconductor layer and a first source / drain electrode layer that are sequentially arranged on a substrate, wherein the first source / drain electrode layer includes a first source and a first drain that are spaced apart from each other along a first direction; and a floating electrode disposed on a side of the first semiconductor layer away from the first gate insulating layer, wherein in the first direction, an orthographic projection of the floating electrode on the substrate falls between an orthographic projection of the first source on the substrate and an orthographic projection of the first drain on the substrate.

The invention discloses a low contact resistance thin film transistor and a preparation method thereof, and the thin film transistor comprises a substrate; a gate electrode on the substrate; the gate dielectric layer is positioned on the gate electrode; the channel layer and the source and drain electrodes are located on the gate dielectric layer; the source electrode and the drain electrode are separated by the channel layer, and the channel particle layers are located between the source electrode and the drain electrode and the channel layer respectively. The metal oxide layer is formed on the contact interface of the channel layer and the source and drain electrodes of the thin film transistor, so that the contact resistance of the thin film transistor is greatly reduced.

An apparatus includes an ultrasonic sensor stack configured to transmit and receive ultrasonic waves. The ultrasonic sensor stack includes at least a thin film transistor layer, a piezoelectric layer, and a thin electrode layer. The ultrasonic sensor stack further includes a tunable metal layer coupled to the thin electrode layer and an acoustic layer coupled to the tunable metal layer, where the tunable metal layer has a thickness greater than a thickness of the thin electrode layer. The thickness of the tunable metal layer may be configured to match a peak frequency in an ultrasonic frequency range of the ultrasonic waves transmitted by the ultrasonic sensor stack. In some implementations, the tunable metal layer includes a copper layer and the acoustic layer includes polyimide or polyethylene terephthalate.

A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further includes: a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer, a portion of the first electrode layer overlapping the driving channel region; a second electrode layer overlapping the first electrode layer; a node connection line having a first side connected to the first electrode layer; a pixel electrode overlapping the first electrode layer and the second electrode layer; and a shielding layer between the first electrode layer and the pixel electrode and overlapping the first electrode layer, the node connection line, and the pixel electrode.

A thin film transistor 101 includes: an active layer 7 that is supported on a substrate 1 and includes a first region 7S, a second region 7D and a channel region 7C located between the first region and the second region; a gate electrode 11 that is arranged so as to overlap with at least the channel region of the active layer 7 with a gate insulating layer 9 therebetween; a source electrode 15s electrically connected to the first region 7S; and a drain electrode 15d electrically connected to the second region 7D, at least the channel region 7C of the active layer 7 having a layered structure that includes a first metal layer m1 arranged on a lower oxide semiconductor layer 71 and containing substantially no oxygen, and an upper oxide semiconductor layer 72 arranged on the first metal layer m1, wherein a thickness of the first metal layer m1 is smaller than a thickness of the lower oxide semiconductor layer 71 or the upper oxide semiconductor 72.

The invention provides a TFT instrument data interaction and cloud collaborative management system, and relates to the technical field of TFT display, and the system comprises a communication collection module which is used for deploying a plurality of integrated thin film transistor display screen units in a transport vehicle, and each unit collects the operation parameter data of the vehicle in real time through a vehicle-mounted sensor network; and the cloud receiving module is used for receiving and analyzing the operation parameters of the transport vehicle, determining the vehicle position, the operation state, the real-time parameter information content and the display mode position which need to be displayed on the monitoring interface, and mapping related data into interface elements to generate a motorcade monitoring interface. According to the invention, real-time data intelligent analysis and cloud cooperation are realized, full-link visualization and remote optimization of the vehicle state are realized, the operation efficiency is improved, and the maintenance cost is reduced.

A display substrate and a display device relate to the technical field of display. The display substrate comprises a plurality of sub-pixels, and each sub-pixel comprises a thin film transistor. The display substrate comprises a substrate, a first conductive layer, a semiconductor layer, a first insulating layer and a second conductive layer, the first conductive layer, the semiconductor layer, the first insulating layer and the second conductive layer are sequentially stacked on one side of the substrate, the first conductive layer is close to the substrate and comprises a data line, and the semiconductor layer comprises a plurality of semiconductor patterns located at different sub-pixels. The semiconductor pattern comprises a source electrode connection region, a first conductor region and a channel region which are arranged along a first direction and are connected in sequence, and the second conductive layer comprises a first switching pattern and a grid electrode; wherein the first insulating layer is provided with a first via hole, the first via hole exposes a part of the data line, the source electrode connecting area and the first conductor area, the data line and the source electrode connecting area are in lap joint with the first switching pattern through the first via hole, and the orthographic projection of the first switching pattern and the orthographic projection of the first conductor area on the substrate are not overlapped.

Provided in the embodiments of the present disclosure are a display apparatus, and an ambient light detection method therefor. The display apparatus comprises a first substrate and a first detection module, wherein the first substrate comprises a display area (AA) and a border area located outside the display area (AA), the first substrate comprises a first base and a photosensitive thin-film transistor (100), the photosensitive thin-film transistor (100) is located in the border area, and the photosensitive thin-film transistor (100) is provided with a first voltage signal and receives ambient light irradiation; and the first detection module can detect a first leakage current generated by the photosensitive thin-film transistor (100) and determine an ambient light color temperature and / or ambient light intensity on the basis of the first leakage current. An ambient light detection function is integrated into the display apparatus, which facilitates making a product more lightweight and thin, and reduces the cost.

The invention relates to a non-contact MicroLED chip mass transfer method and system, and the method comprises the following steps: carrying out the spin coating of a layer of photolysis viscoelastic material on the surface of quartz glass, carrying out the curing, carrying out the spin coating of a layer of viscous flexible deformation material on the surface of the photolysis viscoelastic material, and carrying out the curing again, thereby completing the preparation of a first temporary substrate; scanning the sapphire substrate with the MicroLED chip through laser transfer equipment, decomposing gallium nitride to generate gas, and pushing the MicroLED chip to be transferred to the first temporary substrate; scanning the first temporary substrate through the laser transfer equipment again, and enabling the photolysis viscoelastic material to be photolyzed and gasified by the laser to push the flexible deformation material with viscosity to deform so as to transfer the MicroLED chip to the second temporary substrate; and carrying out hot pressing bonding on the MicroLED chip on the second temporary substrate to the thin film transistor substrate with the metal bumps through transfer bonding equipment.

A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.

A display panel can include a first substrate and a second substrate having a display region and a non-display region adjacent to the display region, a thin film transistor and a light emitting element arranged in each of a plurality of subpixels included in the display region, a dam arranged at the non-display region and an end of the display region between the first substrate and the second substrate, and a protective layer disposed on a side surface of the non-display region and a side surface of the end of the display region.

An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

A display device includes a first substrate, a plurality of gate fan-out lines and a plurality of data fan-out lines in a first metal layer on the first substrate, a second substrate on the first metal layer, a data line in a second metal layer on the second substrate and extending in a first direction, a gate electrode of a thin film transistor in a third metal layer on the second metal layer, a plurality of gate lines in a fourth metal layer on the third metal layer and extending in a second direction crossing the first direction, and at least one connection line in at least one of the second to fourth metal layers, crossing the plurality of data fan-out lines in a plan view, and electrically connecting some of the plurality of gate fan-out lines to corresponding gate lines of the plurality of gate lines.

An embodiment of the present application discloses a display panel and a display panel manufacturing method. The photosensitive element and the thin film transistor device are disposed on the same side of the substrate. Some components of the photosensitive element and some components of the thin film transistor device can be manufactured by the same step, and therefore can improve integration of the photosensitive element on the array substrate. Furthermore, the photosensitive element can be integrated in the display panel with reduced photomasks and a lowered cost.

The present disclosure provides a thin film transistor, an electronic device, a manufacturing method of electronic device, and display device. The thin film transistor includes a driving circuit layer including a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, and a third metal layer stacked together; wherein one of the first, the second, and the third metal layer is configured to be a gate, and the another two are configured to be a source and a drain; a gate insulating layer disposed on a sidewall of the driving circuit layer, and a semiconductor layer disposed on a surface of the gate insulating layer.

The invention discloses a display screen and a display device capable of realizing any partition naked eye 3D switchable, comprising an upper glass plate and a lower glass plate, a liquid crystal layer arranged between the upper glass plate and the lower glass plate, and a semi-cylindrical lens structure located between the upper glass plate and the liquid crystal layer, the arc-shaped surface of the semi-cylindrical lens structure faces one side of the lower glass plate, the transparent electrode layer covers the upper glass layer or the lower glass layer, the transparent electrode layer is located between the upper glass layer and the lower glass layer, and the TFT array structure is located between the upper glass layer and the lower glass layer. The TFT array structure is located on the side, facing the lower glass plate, of the upper glass plate or the side, facing the upper glass plate, of the lower glass plate, 3D images with the light splitting effect can be displayed in the area where 3D images need to be displayed, the liquid crystal light splitting effect is controlled in the place where the 3D display effect is not needed, and the display effect of the liquid crystal display is improved. Therefore, the 2D display area reaches a full-transparent display mode, and the overall display effect is improved.

A display apparatus is disclosed to improve low gray-scale image display and increase driving current. A light-emitting device and a pixel driving circuit electrically connected to the light-emitting device may be disposed in each pixel area. The pixel driving circuit may include a driving thin film transistor. A semiconductor pattern of the driving thin film transistor may include a first active region and a second active region parallel to the first active region. A first sub-gate of the driving thin film transistor may be disposed on a first active channel of the first active region and a second active channel of the second active region. The driving thin film transistor may include a second sub-gate between the semiconductor pattern and the first sub-gate. The second active region may include a portion disposed outside the second sub-gate.

A scan driver includes stages which sequentially output scan signals to scan signal lines during an active period of an N-th frame, and at least one of the stages includes an output node controller that supplies a gate-on voltage to a pull-up node in response to a gate control signal of a display driver; and an output controller that outputs a scan signal to a scan signal line by outputting a scan clock signal to a scan signal line in case that the gate-on voltage is supplied to the pull-up node, wherein the output node controller includes a thin-film transistor including a first active layer, and directly or indirectly connected to the pull-up node, and another thin-film transistor including a second active layer including an oxide semiconductor material different from a oxide semiconductor material of the first active layer, and directly connected to the pull-up node.

Provided are a support substrate, a thin-film transistor layer, a light emitter layer having a plurality of light emitters that emit mutually different colors of light, and a sealing layer sealing the light emitter layer. Each light emitter includes a first electrode, a hole transportation layer, an emissive layer, an electron transportation layer, and a second electrode. The electron transportation layer contains an oxide nanoparticle, a binder resin, and a photo-initiator.

Disclosed is a thin film transistor substrate comprising a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active layer and a first gate electrode; a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode above the first active layer and the first gate electrode; a first insulating layer between the first gate electrode and the second active layer; and; and a first connection electrode connecting together the first active layer and the second active layer, the first connection electrode extending through a first contact hole in the first insulating layer and is in contact with each of the first active layer and the second active layer and a display apparatus including the same.

According to the pixel unit, the driving circuit, the display panel, the display device and the driving method, the pixel unit comprises a first thin film transistor, a pixel electrode, a common electrode and a second thin film transistor, a source electrode of the second thin film transistor is electrically connected with the pixel electrode, and a drain electrode of the second thin film transistor is electrically connected with the common electrode, the grid electrode of the first thin film transistor is used for inputting a starting signal, and the source electrode of the first thin film transistor is used for inputting an overcharge voltage, so that the liquid crystal capacitor is charged, and the pixel electrode has the overcharge voltage; the grid electrode of the second thin film transistor is used for inputting a discharging signal to enable the liquid crystal capacitor to discharge and enable the pixel electrode to have working voltage, the overcharge voltage is larger than the working voltage, the voltage of the pixel electrode can exceed the working voltage when the starting signal is finished, the working voltage is achieved through the discharging process, and the charging speed of the liquid crystal capacitor is increased.

The invention provides a carbazole-containing heterocyclic compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials. The carbazole-containing heterocyclic compound provided by the invention has relatively high polarizability, is beneficial to improving the refractive index, and can reduce the total reflection phenomenon during light emission of the device and effectively improve the light extraction efficiency of the device when being applied to a covering layer of the organic electroluminescent device; and meanwhile, the compound has relatively high glass transition temperature and good film-forming property, and can isolate moisture and oxygen, so that the luminous efficiency and the service life of the organic electroluminescent device are further improved and prolonged. The preparation method of the compound is simple, raw materials are easy to obtain, and the compound can be widely applied to the fields of organic thin film transistors, panel display and the like and has good application effects and industrialization prospects.

A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.