4817 results about "In plane" patented technology

This relates to adding multi-touch functionality to a display without the need of a separate multi-touch panel or layer overlaying the display. Instead, embodiments of the invention can advantageously utilize existing display circuitry to provide multi-touch functionality while adding relatively little circuitry that is specific to the multi-touch functionality. Thus, by sharing circuitry for the display and the multi-touch functionalities, embodiments of the invention can be implemented at a lower cost than the alternative of superimposing additional multi-touch related layers onto an existing display panel. Furthermore, since the display and multi-touch functionality can be implemented on the same circuit, they can be synchronized so that noise resulting from the display functionality does not detrimentally affect the multi-touch functionality and vice versa.

This invention is directed to a downhole method and apparatus for simultaneously determining the horizontal resistivity, vertical resistivity, and relative dip angle for anisotropic earth formations. The present invention accomplishes this objective by using an antenna configuration in which a transmitter antenna and a receiver antenna are oriented in non-parallel planes such that the vertical resistivity and the relative dip angle are decoupled. Preferably, either the transmitter or the receiver is mounted in a conventional orientation in a first plane that is normal to the tool axis, and the other antenna is mounted in a second plane that is not parallel to the first plane. This invention also relates to a method and apparatus for steering a downhole tool during a drilling operation in order to maintain the borehole within a desired earth formation. The steering capability is enabled by computing the difference or the ratio of the phase-based or amplitude-based responses of the receiver antennas which are mounted in planes that are not parallel to the planes of the transmitter antennas. Although this invention is primarily intended for MWD or LWD applications, this invention is also applicable to wireline and possibly other applications.

A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.

An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.

The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.

A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

Geometric correction of rough wireframe models derived from photographs may include rectification of either a 2D or 3D original wireframe model of a roof structure, derivation of metadata from the original wireframe, in-plane normalization of the wireframe, extrusion into a “rough” 3D wireframe based on the normalized wireframe, and correction of the “rough” 3D wireframe. The correction and normalization may be an iterative process based on initial pitch values, metadata derived from the original or corrected wireframe models and defined constraints regarding relationships between roof portions or segments. The iterative process may repeat adjusting the wireframe model until the adjusting converges to a stable state according to the various defined constraints.

The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O₂ or N₂ are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.