431results about How to "Uniform processing" patented technology

A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

A temperature controlled loadlock chamber for use in semiconductor processing is provided. The temperature controlled loadlock chamber may include one or more of an adjustable fluid pump, mass flow controller, one or more temperature sensors, and a controller. The adjustable fluid pump provides fluid having a predetermined temperature to a temperature-controlled plate. The mass flow controller provides gas flow into the chamber that may also aid in maintaining a desired temperature. Additionally, one or more temperature sensors may be combined with the adjustable fluid pump and/or the mass flow controller to provide feedback and to provide a greater control over the temperature. A controller may be added to control the adjustable fluid pump and the mass flow controller based upon temperature readings from the one or more temperature sensors.

A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.

A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

The invention pertains to apparatus and method for precision thermal processing of a body. An energy beam emanating from an energy beam source is scanned across the surface of the body, creating heat input through a moving spot on the surface of said body. By means described herein to condition the spot shape and flux profile, the flux profile within the spot is configured to approximate a thermal solution obtained by solving a boundary condition of the third kind imposed upon the moving spot associated with the beam as it is scanned across the body. In this manner a predetermined surface temperature profile is imposed on the surface of the body within a moving, locally heated spot of predetermined shape and size.

Potential uses include any application which would benefit from the ability to apply a prescribed uniform or variable thermal process to the surface of a body, thus including but not limited to thermal processing of inorganic materials, such as metals and ceramics, and thermal processing of polymeric or organic materials or tissues. Exemplary desired outcomes range from an improvement of surface properties, such as hardness or wear resistance, to the fabrication of a component through an additive manufacturing process.

A microwave processing apparatus includes a processing chamber which accommodates an object to be processed, and a microwave introducing unit which has at least one microwave source to generate a microwave used to process the object and introduces the microwave into the processing chamber. The microwave processing apparatus further includes a control unit which controls the microwave introducing unit. Furthermore, the control unit changes a frequency of the microwave during a state of processing the object.

A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

A semiconductor manufacturing apparatus includes a body having a reaction chamber formed therein to process a semiconductor wafer, a chuck provided within the reaction chamber to support the semiconductor wafer, a chuck rotating device provided within the reaction chamber to support and rotate the chuck, and a slant adjuster to support the chuck rotating device and to adjust a position of the chuck rotating device to adjust a slant of an upper surface of the chuck.

A plasma processing apparatus 100 used to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamber 110 while applying high-frequency power to generate plasma includes a stage 108 on which the workpiece is placed and a stage supporting unit 124 that holds the stage 108. Bellows 120 and 122 are disposed above and below the stage supporting unit 124 to support the stage 108 in a horizontal state relative to the chamber 110. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellows 120 and 122 are used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber 110.

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

A Switching Kalman Filter Model for the real-time inference of hand kinematics from a population of motor cortical neurons. Firing rates are modeled as a Gaussian mixture where the mean of each Gaussian component is a linear function of hand kinematics. A “hidden state” models the probability of each mixture component and evolves over time in a Markov chain. Gaussian mixture models and Expectation Maximization (EM) techniques are extended for automatic spike sorting. Good initialization of EM is achieved via spectral clustering. To account for noise, the mixture model is extended to include a uniform outlier process. A greedy optimization algorithm that selects models with different numbers of neurons according to their decoding accuracy is used to automatically determine the number of neurons recorded per electrode. Closed loop neural control of external events are demonstrated using neural control of a computer curser.

The invention discloses a movable stirring device of a reaction kettle. The movable stirring device comprises a base plate, threaded support rods and an upper lifting cover; the base plate is provided with the threaded support rods, and a synchronous connecting belt is connected between the threaded support rods; the right side of the bottom plate is provided with a first motor; a threaded lifting block is arranged on the periphery of each threaded support rod, the upper lifting cover is arranged between the threaded lifting blocks, and the lower end of the upper lifting cover is provided with a sealing pad, a rotating shaft, a transmission gear, a transmission chain, a fixation piece and a rotating handle; the middle of the upper lifting cover is provided with a stirring shaft, the upper lifting cover is provided with a second motor and an air pump, and the stirring shaft is provided with a stirring fan blade rod, a rotating bearing, a rotating support block, a nozzle, a support pad block, a movable pad block and a rotating sleeve ring; a connecting air pipe is arranged between the air pump and the rotating sleeve ring, and the lower end of the base plate is provided with universal wheels. According to the movable stirring device of the reaction kettle, the upper cover which movably ascends and descends can be flexibly adjusted according to the size of the kettle body, the device is more convenient to use, and the stirring shaft and the stirring fan rod can conduct air injection during processing to promote stirring.

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

A method for heating a wafer to a predetermined temperature, the wafer being held by a holding unit and being accommodated in a processing container equipped with a heater. The wafer is heated to a processing temperature while positioning the wafer at an adjacent position that results form making the wafer approach the heating surface of the heater. After heating the wafer to the predetermined temperature, the wafer is separated from the flat bottom surface of the container body to a processing position. In this state, a processing chamber of the processing container is supplied with a processing fluid, while the holding unit and the heater are relatively moved close to and apart from each other intermittently or continuously. Accordingly, it is possible to quickly heat the substrate to a processing temperature while supplying the substrate with the processing fluid uniformly. This improves throughout and the homogenization in processing.

The invention discloses a building steel plate intermittent polishing device. The middle of a guide rail is rotatably connected with the middle of a driving shaft, the guide rail is fixedly connectedwith the right wall of a device body, the lower end of the driving shaft is fixedly connected with a semi-circular bevel gear, the toothed part of the semi-circular bevel gear is engaged with bevel gears, the bevel gears are fixedly connected with a driven shaft, the left end of the driven shaft is fixedly connected with a semi-circular gear, and the toothed part of the semi-circular gear is engaged with a first gear; and the first gear is fixedly connected with a worm, the upper end of the worm is engaged with a worm wheel, the rear portion of the worm wheel is fixedly connected with a secondgear, and the second gear and the worm wheel are both rotatably connected with the device body. According to the building steel plate intermittent polishing device, the bevel gears at the left end and the right end are driven to rotate through the semi-circular bevel gear, further the driven shaft is driven to conduct reciprocating forward and reverse rotation, the toothed part of the semi-circular gear intermittently drives the first gear to conduct forward and reverse rotation so that the worm can be driven to conduct intermittent forward and reverse rotation, and thus reciprocating left-right intermittent moving of a working table can be achieved; and the structural design of the building steel plate intermittent polishing device is reasonable and applicable, the polishing efficiency of a building steel plate is greatly improved, machining of all the parts of the steel plate is even, and the polishing effect is excellent.

The DSCP Mirroring System enables the automatic reuse of the Differentiated Services Code Point header by the user devices that are served by a network to enable delivery of wireless services to the individually identified user wireless devices and manage the various data traffic and classes of data to optimize or guarantee performance, low latency, and/or bandwidth without the overhead of the management of the Differentiated Services Code Point header.

There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.