Substrate processing apparatus and substrate processing method

Abstract

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Description

TECHNICAL FIELD[0001]The present invention relates to a substrate processing apparatus and a substrate processing method.BACKGROUND ART[0002]In a process of manufacturing a semiconductor substrate (hereinafter, referred to simply as a “substrate”), conventionally, various processings are performed on a substrate by using a substrate processing apparatus. Japanese Patent Application Laid-Open No. 2004-158588 (Document 1), for example, discloses a substrate processing apparatus capable of removing organic substances deposited on a substrate by using a removal liquid. In the substrate processing apparatus, by supplying temperature-controlled nitrogen gas onto a back surface of the substrate from a back-surface side gas nozzle before supplying the removal liquid onto the substrate from a removal liquid nozzle, a temperature of the substrate becomes close to that of the removal liquid. It is thereby possible to make the temperature of the removal liquid flowing on a surface of the substr...

AI Technical Summary

Benefits of technology

[0006]The present invention is intended for a substrate processing apparatus for processing a substrate, and in a substrate processing apparatus in which an upper surface of a substrate is processed with a processing liquid while the substrate is heated with heated gas ejected from a gas ejection nozzle, it is an object of the present invention to perform a processing onto a lower surface of the substrate with a processing liquid and further to suppress a flow of the processing liquid into the gas ejection nozzle during the processing. It is another object of the present invention to perform uniform processing onto the upper surface of the substrate.

Problems solved by technology

Therefore, there is a limitation in suppressing the vaporization of the chemical liquid by reducing the exhaust.

Actually, since there occurs a decrease in the temperature especially at an outer edge portion of the substrate, it is impossible to improve the uniformity of the processing using the chemical liquid.

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