53 results about "Particle contamination" patented technology

A system and method for increasing a gas flow across a substrate in a charged particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising: a first gas inlet fluidly connected to a charged particle beam optical element array and configured to guide a first gas flow downstream toward a substrate within the charged particle beam optical element array at a first flow rate; and a second gas inlet configured to guide a second gas flow toward the substrate at a second flow rate. The first and second gas flows are merged to form a transverse gas flow across the top surface of the substrate, the transverse gas flow having a flow rate higher than either the first or second flow rate.

The invention relates to a multi-station optical filter surface coating device and a method thereof, and belongs to the technical field of coating devices.The method comprises the steps that a magnetic suspension conveying system, a sputtering system and a dynamic air curtain isolation system are arranged in a single tunnel type main vacuum chamber, the magnetic suspension transport system comprises a linear driving coil mounted outside the cavity, a magnetic suspension tray arranged inside the cavity and used for bearing a substrate, and a position detection unit mounted outside the cavity, and the tray and the coil realize magnetic field coupling through the cavity wall; the sputtering system comprises a plurality of sputtering target materials which are sequentially mounted on the inner top wall of the cavity, and the core progress of the invention is that a set of magnetic suspension transportation system is adopted, so that the problem of particle pollution is solved; the system is characterized in that the linear driving coil is arranged outside the cavity, the magnetic suspension tray for bearing the substrate is contained in the cavity, no mechanical connection exists between the linear driving coil and the magnetic suspension tray, and magnetic field coupling is achieved only through the non-magnetic cavity wall.

The invention discloses a wafer turnover device, and the device comprises a wafer clamping mechanism which is disposed on a mounting rack and is used for clamping the edge of a wafer and driving the wafer to turn over; the wafer overturning mechanism is associated with the wafer clamping mechanism and is used for driving the wafer clamping mechanism to rotate so as to overturn the clamped wafer; and the wafer caching mechanism is arranged on the mounting rack and is used for receiving and temporarily storing wafers conveyed by an external manipulator and providing a wafer clamping station for the wafer clamping mechanism. The core innovation of the mechanism lies in that overturning is realized by clamping the edge of the wafer, any contact with the front and back surfaces of the wafer is completely avoided, particle pollutants, scratches or mechanical stress damage possibly introduced by clamping the front or back surface of a traditional overturning mechanism are eliminated, and the risk of secondary pollution is greatly reduced.

This disclosure provides a method, system, and epitaxial wafer for improving particulate contamination of silicon wafers during epitaxy. The method includes: selecting at least one test silicon wafer from a batch of silicon wafers to be processed, and determining a target power range to be applied to the epitaxial furnace based on the test results of the test silicon wafer; adjusting the effective power applied to the epitaxial furnace to the target power range before the silicon wafer to be processed is fed into the epitaxial chamber of the epitaxial furnace, so that the temperature inside the epitaxial chamber is within a target temperature range; maintaining the effective power of the epitaxial furnace within the target power range until the silicon wafer to be processed enters the epitaxial chamber, thereby using the target temperature range to suppress thermal deformation of the silicon wafer to be processed; and growing an epitaxial layer on the surface of the silicon wafer to be processed after it enters the epitaxial chamber. This disclosure can effectively reduce particulate contamination of the silicon wafer to be processed during epitaxy.

The invention provides a gas tank, thin film deposition equipment, a control method and a storage medium. The gas tank comprises a tank body, a cold air pipeline, a vaporization detector and a controller. An air inlet is formed in the box wall of the box body, and a vaporizer of a precursor is arranged in the box body. The first end of the cold air pipeline is connected with a cold air source, the second end of the cold air pipeline is connected with the air inlet of the box body, and a valve is arranged in the cold air pipeline. And the vaporization detector is configured at a gas outlet of the vaporizer. The controller is connected with the valve and the vaporization detector, and is configured to obtain the vaporization rate of the vaporizer to the precursor through the vaporization detector; and the opening degree of the valve is adjusted according to the vaporization rate, so that the environment temperature in the box body is adjusted. The vaporizing rate of the vaporizer to the precursor can be detected, the opening degree of the valve of the cold air pipeline is adjusted accordingly, sufficient vaporizing of the vaporizer to the precursor is ensured, and the problem that particle pollution is introduced into the process chamber due to insufficient vaporizing is avoided.

The invention relates to a substrate processing apparatus and a method of cleaning a lock key. The present invention prevents a substrate from being contaminated by particles derived from a lock key and a member in contact with the lock key. A substrate processing apparatus for drying a substrate by replacing a liquid film formed on an upper surface of the substrate with a supercritical fluid is provided with: a pressure vessel having a drying chamber for drying the substrate therein; the cover body is used for blocking the opening of the drying chamber; the locking key is used for limiting the cover body to move from a closing position where the cover body closes the opening to an opening position where the cover body opens the opening; and a cleaning unit that cleans the lock key.

Disclosed in the embodiments of the present disclosure is a suspended hollow shaft magnetic levitation wafer manufacturing apparatus, which comprises a process chamber, a support component, a hollow shaft, an isolation sleeve, a holder, and an active magnetic levitation motor. The isolation sleeve is sealingly connected to a first opening at the top of the process chamber; the active magnetic levitation motor comprises a magnetic levitation stator and a magnetic levitation rotor, the magnetic levitation rotor, the hollow shaft and the holder being all arranged in a vacuum environment; the magnetic levitation rotor is fixedly connected to the hollow shaft, and the support component is provided in the hollow shaft; the magnetic levitation stator is arranged outside the isolation sleeve and drives, in a contactless active control mode, the magnetic levitation rotor to achieve stable levitation and rotation; one end of the holder is fixedly connected to the hollow shaft, and the other end of the holder is configured to bear a wafer, such that the wafer is arranged in the process chamber in a suspended manner. The present disclosure does not need to provide mechanical bearings and thus does not generate particle contamination, thereby remarkably improving the quality of films, greatly extending the overall service life of apparatuses, and further reducing the costs of maintenance and cleaning for apparatuses.

A measurement station for measuring particle contamination in a transport enclosure for the atmospheric transport and storage of semiconductor wafers includes a particle counter and an interface designed to be coupled to the shell of a transport enclosure in place of the door. The interface includes a sampling orifice fluidly connected to the particle counter. The measurement station also includes a clean-gas injection device having at least one injection line including at least one injection nozzle to be fluidly connected to a ventilation port of the transport enclosure coupled to the interface for injecting clean gas into the transport enclosure, from outside the transport enclosure, through the at least one ventilation port of the transport enclosure.

Substrate devices are described for supporting, transporting, and processing a reticle, including for supporting the reticle during a step of detecting particle contamination at a surface of the reticle prior to use of the reticle in an extreme ultraviolet (EUV) lithography process. The substrate device may be designed to prevent or reduce the amount of light used in a reticle back side inspection system, such as reflected from a substrate through edge structures of the substrate and redirected to a camera of the reticle back side inspection system.

The invention discloses a plasma enhanced chemical vapor deposition method and device. The method comprises the following steps: a first thin film deposition step: adjusting a plasma power supply system to ionize a first reaction gas introduced into a chamber at a first output deposition power so as to perform first thin film deposition on a wafer in the chamber; a first purging step: adjusting the plasma power supply system and keeping the plasma power supply system at a first output purging power, purging the wafer by using the purging gas introduced into the chamber, the first output purging power being lower than the first output deposition power; and a second thin film deposition step in which the plasma power supply system is adjusted to ionize a second reaction gas introduced into the chamber at a second output deposition power so as to perform second thin film deposition on the wafer, and the first output purging power is lower than the second output deposition power. According to the method, the low-power plasma state is maintained in the purging stage between step-by-step deposition, condensation of residual reactants is inhibited, and the defect rate of wafer particle pollution is greatly reduced.

The invention relates to the technical field of metal organic source purification, and particularly discloses an efficient purification process for trimethyl aluminum. The efficient purification process for trimethyl aluminum provided by the invention comprises the following steps: S1, carrying out infrasonic wave pretreatment on a trimethyl aluminum crude product and synchronously carrying out low-temperature cooling; s2, reduced pressure distillation: continuously extracting low-boiling-point impurities under a dynamic vacuum condition, and collecting fractions by adopting a cryogenic receiving tank; and S3, carrying out gradient condensation and vacuumizing on the residual mother liquor to obtain the ultra-pure trimethyl aluminum. According to the efficient purification process for trimethyl aluminum, the chemical adsorption state of trace impurities (such as dimethyl aluminum chloride, organic silicon and the like) is accurately destroyed through the infrasonic wave-low temperature coupling effect, and the removal efficiency of ppm-level impurities is remarkably improved in combination with vacuum gradient separation. The method has the advantages that aluminum oxide particle pollution caused by high temperature is avoided, meanwhile, energy consumption is greatly reduced, and the method is particularly suitable for large-scale continuous production of semiconductor-grade purity trimethyl aluminum.

This application discloses a graphite support stage and epitaxial equipment. The graphite support stage includes a substrate made of graphite material and a separate component, which is detachably disposed on the substrate and adheres to the surface of the substrate. A support area for supporting a wafer is provided on the side of the separate component facing away from the substrate. The substrate supports the separate component and transfers heat to it. Compared to related technologies, the graphite support stage disclosed in this application adopts a separate design. The substrate, as a permanent support component, can be used for a long time, requiring only replacement of the easily worn separate component, significantly reducing spare parts costs and equipment downtime. Furthermore, the separate component can be replaced periodically, ensuring that each process is performed on a clean and intact support area, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging. This improves the thickness uniformity and doping concentration consistency of the epitaxial layer, thereby increasing product yield.

The utility model belongs to the technical field of oil product detection, and particularly relates to an oil product particle pollutant detection device which comprises a detection box, a connecting seat fixedly connected with the inner bottom surface of the detection box, and a particle sensor movably mounted on the connecting seat, through cooperative use of insertion blocks and first springs, when the box cover needs to be opened, the insertion blocks on the two sides are pressed down, the insertion blocks do not limit the sliding blocks any more, a worker can push the box cover and open the box cover, and when the box cover needs to be closed, the worker only needs to push the box cover to drive the box cover to move in guide rails of the sliding blocks on the two sides. When the insertion block moves to the position of the first connecting hole, the first spring is changed into a loose state from a compressed state, and the insertion block is driven to enter the first connecting hole to limit the box cover, so that the box cover is closed, the box cover is opened and closed more conveniently, a worker can maintain the interior of the detection box conveniently, and the oil product detection efficiency is improved.

A needle seat structure for reducing particle pollution of an electrode needle of a static eliminator belongs to the field of static elimination. Comprising an electrode needle, a cylindrical electrode needle mounting piece fixedly connected with the electrode needle is arranged on the electrode needle, and a cylindrical boss is arranged on the top of the cylindrical electrode needle mounting piece; an electric connection fixing piece with an inverted barrel-shaped structure is arranged; the electrode needle is located at the center of the shaft and penetrates through the whole electrode needle mounting piece, and the tail of the electrode needle is higher than a cylindrical boss at the top of the electrode needle mounting piece; the electrode needle mounting piece and the electric connection fixing piece are fixed together to form a cylindrical structure as a whole; an air channel component which is matched with the electrode needle mounting piece and is used for forming a circular-tube-shaped air channel is arranged; the air channel component is of an axial symmetry structure and is coaxially installed on the rod core of the ion rod with the electrode needle installation piece. By arranging a circular-tube-shaped air channel structure, the protection space of the electrode needle and the needle cone part of the electrode needle is enlarged, and the adsorption probability of pollution particles is reduced.

The invention relates to a vacuum filling system. The system comprises a fixedly-arranged filling assembly, a bracket arranged below the filling assembly and a sealing sleeve which is coaxially arranged between the bracket and the filling assembly and can ascend and descend. During filling, the bracket drives the packing material to ascend, so that the opening of the packing material abuts against the sealing body at the lower end of the sealing sleeve to form first sealing; and the bracket continuously ascends to push the sealing sleeve, so that the upper end of the sealing sleeve is matched with the filling assembly to form second sealing, and a closed filling cavity is formed among the packing material, the sealing sleeve and the filling assembly. In the whole filling and packing material lifting process, the filling needle is kept still all the time. According to the invention, active lifting of the packing material is matched with a friction-free sealing structure, so that particle pollution caused by pipeline deformation and relative sliding friction is avoided, the packing material is separated from the weighing device when being lifted, stress interference is eliminated, and the precision of in-situ online weighing is ensured.

A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a bonded pair of wafers, where the bonded pair of wafers are bonded with a bonding tool. The wafer shape metrology sub-system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements from the wafer shape sub-system; convert the stress-free shape measurements into an overlay distortion pattern; detect one or more localized deviations in the bonded pair of wafers in order to identify one or more contaminant particles on the bonding tool; and report the one or more localized deviations in the bonded pair of wafers.

The application provides an exposure machine focus compensation method and an exposure machine focus compensation system. The exposure machine focus compensation method obtains multiple sets of GRP deformation correction mapping graphs after rotation and Z-direction fluctuation amounts after rotation through rotation, calculates the Z-direction fluctuation difference values by taking the first Z-direction fluctuation amount, identifies whether the wafer surface is abnormal by taking the Z-direction fluctuation difference values, and stops compensation when the wafer surface is abnormal, so as to avoid misoperation, actively exclude abnormal wafers, reduce the production wafer scrapping, and quickly screen the standard wafer state during the test process. Unexpected technical effects are achieved: abnormal standard wafers (such as particle pollution) can be screened in advance, the MGSC miscompensation link is blocked, and the key size defocus is avoided from the source.

A wafer is supported on a wafer support structure such that a lower peripheral open region exists between a peripheral portion of a bottom surface of the wafer and an edge ring structure. The edge ring structure is configured to circumscribe both the wafer support structure and the wafer. A plasma is generated above a top surface of the wafer. The plasma causes accumulation of byproduct material within the lower peripheral open region. A byproduct volatizing gas is supplied to the lower peripheral open region to control the accumulation of the byproduct material within the lower peripheral open region during generation of the plasma. Use of the byproduct volatizing gas to control the accumulation of the byproduct material within the lower peripheral open region serves to prevent electrical arcing and particle contamination.

The invention relates to a particle testing system (1) for testing particle contamination on a surface (2), comprising a sampling tape (7) for receiving particles (5) and a sampling device (3). The sampling device (3) comprises a roller body (9) which is arranged to guide the sampling tape (7) on an outer surface (10) of the roller body. The sampling device (3) is designed to roll the roller body (9) together with the sampling tape (7) over the surface (2) to be tested in order to transfer particles (5) from the surface (2) to be tested to the sampling tape (7). The sampling device (3) has a guide frame (22) in order to position the sampling device (3) on or adjacent to the surface (2) to be checked. The guide frame (22) has at least one contact interface (24, 25) by which the guide frame (22) rests on the surface (2) to be checked or on another surface. According to the invention, the sampling device (3) has a first measuring device (16) and / or a second measuring device (19). The first measuring device (16) is designed to detect any rotational movement of the roller body (9). The second measuring device (19) is designed to detect any contact pressure of the roller body (9) on the surface (2) to be checked.

The present application relates to a kind of blood component separator monitoring box processing technology, comprising: S01 is set up in upper cover glue containing groove;S02 UV glue is added into glue containing groove;S03 is in upper cover pressing monitoring box shell;S04 is cured by solidification device UV glue, so that monitoring box shell and upper cover are bonded into one;S05 is coated with UV glue on monitoring box shell;S06 is covered with film material on monitoring box shell and is pressed;S07 is cured by solidification device UV glue, film material and monitoring box body are bonded into one, thus monitoring box assembly is completed;S08 upper cover, film material and monitoring box shell are sealed into several passages, respectively, and gas is introduced into each passage of monitoring box upper passage and is sealed performance detection.The process utilizes the good light transmittance of PMMA material monitoring box, uses UV glue to complete the assembly of monitoring box, replaces the traditional process of ultrasonic welding monitoring box, and then avoids the particle pollution of monitoring box caused by ultrasonic welding and welding stress.

The invention discloses a particle collection and evaporation method and device based on Lorentz force, and relates to the field of silicon-based OLEDs, the method comprises the following steps: S1, iron-containing particles and evaporation material gas are discharged through an evaporation source at the same time, and the gas flow runs from bottom to top; s2, the airflow passes through an annular magnetic field area, the iron-containing particles deflect out of a vertical channel under the influence of Lorentz force, and the evaporation material gas moves upwards along the vertical channel; s3, capturing the iron-containing particles by a carbon nanotube conductive collection net; s4, sucking the iron-containing particles on the carbon nanotube conductive collection net into a particle sealing tank for storage through a vacuum suction pipeline in the vacuum adsorption device; and S5, performing component analysis on the particles, and monitoring the change of the pollution particles to perform targeted management and control. According to the scheme, a novel evaporation equipment scheme is provided, iron-containing pollution particles are filtered and collected in the evaporation process, the phenomenon that the particles pollute an OLED film layer is fundamentally eradicated, bad bright spots are avoided, and the product yield is increased.

The embodiment of the utility model provides an ion implanter and semiconductor manufacturing equipment, a machine table of the ion implanter is divided into a first functional region and a second functional region, the first functional region and the second functional region are vertically arranged in a layered manner, the first functional region is located at the lower layer, and the second functional region is located at the upper layer; the cleanliness of the second functional area is higher than that of the first functional area; the first functional region is provided with: an ion source for generating ions; the beam screening area is used for screening ions generated by the ion source to form an ion beam and upwards transmitting the ion beam to the second functional area; and the second functional region is provided with a process cavity for receiving the ion beams transmitted by the beam screening region and performing ion implantation on the to-be-implanted material. According to the ion implanter provided by the embodiment of the invention, the particle pollution risk can be reduced, and the product yield can be improved.

The invention belongs to the technical field of semiconductor processing, and particularly relates to a method for reducing particle pollution generated by a semiconductor static pipeline system. The static pipeline system refers to all fixed and non-dynamically adjusted gas conveying channels, connecting pieces and mounting structures of the gas conveying channels, the connecting pieces and the mounting structures, the gas conveying channels, the connecting pieces and the mounting structures are arranged between a mass flow controller and a reaction chamber flange in the polycrystalline silicon deposition equipment, and the static pipeline is made of stainless steel. And carrying out oxidation passivation operation on the static pipeline system to deposit passivation layers on the inner walls of the pipelines, the connecting pieces and the surfaces of the mounting structures, which are in contact with the gas source gas for polycrystalline silicon deposition, and then carrying out a polycrystalline silicon deposition process. The compact oxide layer is formed in the pipeline, so that the particle release amount is greatly reduced, the number of particles entering the reaction chamber is further reduced, and the subsequent polycrystalline silicon thin film deposition quality is remarkably improved.

The invention provides hot net vacuum electron beam equipment, and relates to the field of vacuum electron beam welding. An inner cavity is formed in the vacuum chamber, the vacuum chamber is communicated with a vacuum pump, the clean chamber is fixedly arranged on one side of the vacuum chamber, the transition cavity is arranged on one side, close to the vacuum chamber, in the clean chamber, and the electronic gun is fixedly arranged at the top of the vacuum chamber. And a driving assembly for driving the baffle door to be close to or away from the opening is fixedly arranged on the inner bottom surface of the transition cavity. According to the device, the workpiece clamping area is arranged in the clean room, and the problem that particulate pollutants are introduced due to manual operation or environmental problems in the clamping process of traditional equipment is solved. The whole process from clamping, preheating to feeding of the workpiece into the vacuum chamber is in a controlled ultra-clean environment, it is ensured that the welding environment meets the requirement for particle pollution in the semiconductor industry, and the cleanliness and the yield of the weldment are improved.

The invention provides an ion beam sputtering method, device and system and electronic equipment. The method comprises the following steps: applying different target bias voltages to a plurality of target materials which are fixedly arranged, so that sputtering occurs or does not occur on the surfaces of the target materials; and ion beams are emitted to the target material with the surface capable of being sputtered, and ion beam sputtering deposition is carried out. The ion beam sputtering deposition method solves the technical problems that an existing ion beam sputtering deposition method generally depends on a mechanical movable structure to achieve ion beam sputtering target material selection and switching, particle pollution, deflation and lubrication residues are likely to be introduced in a high-cleanliness and low-defect coating scene, and the reliability and long-term stability of a system are remarkably reduced.

Method for detecting particle contamination inside (2) a building (1) by means of a detection device (3, 4), wherein a first detection device (3) is located at a first location (5) inside (2) the building (1), wherein first detection information (101) describing particle contamination in the building (1) is generated via the first detection device (3), and a further detection device (4) is arranged at at least one further location (6) inside (2) the building (1), wherein further detection information (102) describing particle contamination in the building (1) is generated via the further detection device (4), and the detection information (101, 102) is transmitted to a central computing unit (7) in order to derive particle contamination information (103) from the combined detection information (101, 102), characterized in thatthat the particle contamination information (103) describes information about at least a quantity of particles at at least one variable reference location inside (2) the building (1), wherein the variable reference location is assigned to a reference object (9) located inside (2) the building (1) at defined times and at defined locations, wherein particle contamination information (103) of the reference object (9) is generated by taking into account detection information (101, 102) of defined locations at defined times.

The invention discloses a mechanical arm surface monitoring method, device and equipment and a storage medium, and relates to the technical field of image processing.The method comprises the steps that in response to a motion state signal of a mechanical arm, whether the mechanical arm is located at a preset monitoring position or not is determined; when the mechanical arm is located at the preset monitoring position, a preset imaging module is started to collect a to-be-monitored image on the surface of the mechanical arm; and performing particle detection on the to-be-monitored image to obtain particle information on the surface of the mechanical arm. When it is monitored that the mechanical arm is located at the preset monitoring position in combination with the motion state signal of the mechanical arm, the preset imaging module is started to collect the to-be-monitored image on the surface of the mechanical arm, then the to-be-monitored image is analyzed, monitoring is carried out according to whether the mechanical arm has particle pollution or not, the production process does not need to be interrupted, manual detection is not needed, and the production efficiency is improved. The accuracy and efficiency of monitoring particles on the surface of the mechanical arm in the production process are improved, and therefore the situation of product defects caused by particle pollution is reduced.

One example provides a pulsed laser deposition (PLD) tool. The PLD tool includes a processing chamber including a laser light entrance window. The PLD tool also includes a target holder located within the processing chamber. The PLD tool also includes a substrate holder located within the processing chamber. The PLD tool also includes a laser configured to direct laser light through the laser entrance window and toward the target holder. The PLD tool also includes a purge gas inlet between the laser light entrance window and the target holder, the purge gas inlet configured to direct a flow of purge gas into a path of the laser light.

Embodiments of the present application provide a sterilization device, method, apparatus and medium for a low-temperature storage environment. The device can include a first discharge device and a second discharge device. The first discharge device can generate plasma and / or ozone, and the second discharge device can generate ozone. The plasma generated by the device can charge and collect particles in the low-temperature storage environment, thereby avoiding particle contamination of the problems stored in the low-temperature storage environment. In addition, the ozone generated by the device can diffuse throughout the low-temperature storage environment, thereby killing microorganisms in the low-temperature storage environment, thereby achieving efficient sterilization of the low-temperature storage environment. In addition, through the first discharge device and the second discharge device, the particles in the environment can be collected multiple times, thereby improving the dust removal effect of the environment.