90 results about "Particle contamination" patented technology

Various implementations, systems and methods are disclosed for continuous, near real-time, hands-off sampling of airborne particulate matter, and qualification and / or quantification of biomolecules in the sample representative for biologic or microbial contamination. The systems and methods may utilize an electrostatic precipitator for sampling the matter; and a measurement assembly configured to illuminate, excite, or breakdown the sampled matter by electromagnetic radiation, and to detect a spectrum, or one or more wavelength bands of the scatter emitted by the sample. In an exemplary implementation, a sputter deposition process is employed to configure the sample for an enhanced plasmon resonance. The measurement data may be transferred via wireless communication means for cloud storage and signal processing.

A system and method for real-time semiconductor manufacturing cluster tool health status monitoring is provided through in-situ sensors. In one method embodiment, an operating procedure for evacuating / ventilating a load lock (LL) and the LL door facing a vacuum transfer module (VTM) and an equipment front end module (EFEM), a sensor installation location and operating procedure, and a data flow and analysis procedure are proposed. The sensor provides real-time data and simultaneously monitors airborne particle contamination of the EFEM, load lock (LL), VTM, and multiple processing modules (PM) by correlating the door open / close time and ventilation / evacuation time in the load lock to particle measurement data. The method also includes providing an operation based on real-time measurement data, door status data, and the use of a machine learning algorithm to determine a recommended maintenance procedure for one of the EFEM, LL, VTM, or multiple PMs.

The invention provides a transmission mechanism protection structure of a vacuum reaction cavity, and relates to the technical field of semiconductor equipment. The device comprises an outer cavity and an inner cavity which are designed to be nested, and further comprises a heating device and a rotating mechanism, the outer cavity is arranged outside the inner cavity in a sleeving mode, and a gas filling gap is formed between the outer cavity and the inner cavity; the heating device is arranged on the outer side of the outer cavity so as to transfer heat into the inner cavity through heat conduction and heat radiation of the outer cavity. The problems of particle pollution, space occupation, uneven temperature, limited applicability and the like can be remarkably solved, and the operation reliability and maintenance convenience of equipment are improved.

The invention discloses a method for testing dynamic granularity of a valve, and belongs to the technical field of ultra-pure fluid systems. According to the method, through components such as an air inlet pressure regulating valve, a pressure gauge, a high-pressure controller, a particle counter, a main channel and a test channel, accurate monitoring of dynamic particle pollution of the valve under the actual working condition is achieved; the method comprises the following steps: 1, ensuring that a particle counter works under stable sampling flow through a flow regulation compensation mechanism, and improving the accuracy of measured data; 2, static purging is carried out, initial particle pollution is effectively removed, and a clean basic environment is provided for dynamic testing; step 3, dynamically purging the tested piece by detecting the switching frequency, simulating the actual opening and closing process of the valve, and dynamically evaluating the cleanliness of the tested piece; according to the invention, the limitation of the traditional static test is overcome, the dynamic particle release characteristics of the valve are truly reflected, and a comprehensive and accurate particle size test result is provided for an ultra-pure fluid system.

A vaporizing device comprising an intake gas filtration and scrubbing unit to reduce particle contamination and normalize the temperature and humidity of an intake gas before introducing it into a reaction chamber. The reaction chamber generates an aerosol from a precursor composition and includes a reservoir to hold the precursor, a heater to heat the composition for a thermally mediated reaction, and a control system to regulate the heater. The device further includes a particle size selection system with impaction surfaces to select particles of a desired size, a condenser to condition the aerosol, and a mouthpiece to deliver the aerosol to a user. The vaporizing device may also include features such as a valve system for purging, a condenser designed for laminar flow, and materials designed for optimal infrared radiation transmission and blocking. A sensor is incorporated to monitor the temperature of the heater.

The invention relates to a copper cluster scintillator constructed on the basis of diphenyl-2-pyridine phosphine and cuprous iodide and a preparation method and application of the copper cluster scintillator. The preparation method comprises the following steps: constructing a copper cluster scintillator by using diphenyl-2-pyridine phosphine and cuprous iodide, and preparing the copper cluster scintillator into a semitransparent scintillator film by using polyvinylpyrrolidone as a high-molecular polymer matrix and polyethylene glycol terephthalate as a spin-coating substrate; the scintillator film and a photomultiplier are optically coupled and integrated with nuclear electronics equipment to develop an alpha / beta particle pollution monitor. The copper cluster scintillator provided by the invention has excellent X-ray luminescence performance, and can realize high-sensitivity scintillation response to alpha / beta particles; the surface pollution monitor can realize sensitive detection of alpha / beta particles in the environment, and has important application value in the field of environmental radiation detection.

The invention discloses a particle pollution control packaging method and system for a wafer box, and particularly relates to the technical field of semiconductor manufacturing, and the method comprises the steps: removing pollutants through plasma and ultrasonic cleaning; gas replacement is performed to generate stable nitrogen laminar flow; a drying agent is conveyed through a track and filled through a photoelectric sensor; sealing with an adhesive tape and covering with a protective film; operation data are collected and analyzed, parameters are dynamically adjusted, and continuous optimization is achieved. According to the particle pollution control packaging method and system for the wafer box, the complete wafer box particle pollution control system is constructed through the steps of cleaning before packaging, gas replacement, drying agent filling, adhesive tape sealing, protective film covering and the like and cooperative operation of corresponding system modules; pollutants on the surface of the wafer box are removed, external pollution particles are isolated, moisture in the box is controlled, physical protection is enhanced, particle pollution control over the whole packaging process of the wafer box is achieved, and the quality safety of wafers in the storage and transportation process is guaranteed.

A system and method for increasing a gas flow across a substrate in a charged particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising: a first gas inlet fluidly connected to a charged particle beam optical element array and configured to guide a first gas flow downstream toward a substrate within the charged particle beam optical element array at a first flow rate; and a second gas inlet configured to guide a second gas flow toward the substrate at a second flow rate. The first and second gas flows are merged to form a transverse gas flow across the top surface of the substrate, the transverse gas flow having a flow rate higher than either the first or second flow rate.

The invention relates to a multi-station optical filter surface coating device and a method thereof, and belongs to the technical field of coating devices.The method comprises the steps that a magnetic suspension conveying system, a sputtering system and a dynamic air curtain isolation system are arranged in a single tunnel type main vacuum chamber, the magnetic suspension transport system comprises a linear driving coil mounted outside the cavity, a magnetic suspension tray arranged inside the cavity and used for bearing a substrate, and a position detection unit mounted outside the cavity, and the tray and the coil realize magnetic field coupling through the cavity wall; the sputtering system comprises a plurality of sputtering target materials which are sequentially mounted on the inner top wall of the cavity, and the core progress of the invention is that a set of magnetic suspension transportation system is adopted, so that the problem of particle pollution is solved; the system is characterized in that the linear driving coil is arranged outside the cavity, the magnetic suspension tray for bearing the substrate is contained in the cavity, no mechanical connection exists between the linear driving coil and the magnetic suspension tray, and magnetic field coupling is achieved only through the non-magnetic cavity wall.

The invention discloses a wafer turnover device, and the device comprises a wafer clamping mechanism which is disposed on a mounting rack and is used for clamping the edge of a wafer and driving the wafer to turn over; the wafer overturning mechanism is associated with the wafer clamping mechanism and is used for driving the wafer clamping mechanism to rotate so as to overturn the clamped wafer; and the wafer caching mechanism is arranged on the mounting rack and is used for receiving and temporarily storing wafers conveyed by an external manipulator and providing a wafer clamping station for the wafer clamping mechanism. The core innovation of the mechanism lies in that overturning is realized by clamping the edge of the wafer, any contact with the front and back surfaces of the wafer is completely avoided, particle pollutants, scratches or mechanical stress damage possibly introduced by clamping the front or back surface of a traditional overturning mechanism are eliminated, and the risk of secondary pollution is greatly reduced.

The invention relates to the technical field of semiconductors, in particular to an image detection method for particle pollution on the surface of a semiconductor wafer. The method comprises the steps of obtaining a global noise characterization value according to a pixel value variance in a local window and an area proportion of a first target connected domain on a binary image, obtaining a region fuzzy characterization value according to the edge total length of all broken connected domains, the edge total length of all second target connected domains and a cavity area of the second target connected domains, and obtaining a region fuzzy characterization value according to the region fuzzy characterization value. Obtaining a morphological processing strategy corresponding to the surface suppression image according to the global noise characterization value and the region fuzzy characterization value, and performing morphological processing on the surface suppression image according to the morphological processing strategy to obtain a pollution particle to-be-detected image. And carrying out pollution particle detection and identification on the to-be-detected image of the pollution particles by utilizing a pollution particle detection model. And the accuracy and the integrity of detecting and identifying the pollution particles on the surface of the semiconductor wafer can be improved.

This disclosure provides a method, system, and epitaxial wafer for improving particulate contamination of silicon wafers during epitaxy. The method includes: selecting at least one test silicon wafer from a batch of silicon wafers to be processed, and determining a target power range to be applied to the epitaxial furnace based on the test results of the test silicon wafer; adjusting the effective power applied to the epitaxial furnace to the target power range before the silicon wafer to be processed is fed into the epitaxial chamber of the epitaxial furnace, so that the temperature inside the epitaxial chamber is within a target temperature range; maintaining the effective power of the epitaxial furnace within the target power range until the silicon wafer to be processed enters the epitaxial chamber, thereby using the target temperature range to suppress thermal deformation of the silicon wafer to be processed; and growing an epitaxial layer on the surface of the silicon wafer to be processed after it enters the epitaxial chamber. This disclosure can effectively reduce particulate contamination of the silicon wafer to be processed during epitaxy.

The invention provides a gas tank, thin film deposition equipment, a control method and a storage medium. The gas tank comprises a tank body, a cold air pipeline, a vaporization detector and a controller. An air inlet is formed in the box wall of the box body, and a vaporizer of a precursor is arranged in the box body. The first end of the cold air pipeline is connected with a cold air source, the second end of the cold air pipeline is connected with the air inlet of the box body, and a valve is arranged in the cold air pipeline. And the vaporization detector is configured at a gas outlet of the vaporizer. The controller is connected with the valve and the vaporization detector, and is configured to obtain the vaporization rate of the vaporizer to the precursor through the vaporization detector; and the opening degree of the valve is adjusted according to the vaporization rate, so that the environment temperature in the box body is adjusted. The vaporizing rate of the vaporizer to the precursor can be detected, the opening degree of the valve of the cold air pipeline is adjusted accordingly, sufficient vaporizing of the vaporizer to the precursor is ensured, and the problem that particle pollution is introduced into the process chamber due to insufficient vaporizing is avoided.

The invention discloses a wafer carrier detection device, semiconductor processing equipment and a semiconductor processing method. The detection device comprises a distance measuring sensor which is arranged on the wafer transmission module and is used for collecting position data of the wafer carrier extending into the wafer transmission module in the vertical direction; and a controller configured to: preset the number of wafer transmission interval detection wafers; in response to the fact that the wafer carrier transmits the wafers with the interval detection number, when the wafer carrier extends into the wafer transmission module next time, position data of the wafer carrier in the vertical direction are obtained through a distance measuring sensor; and giving an alarm and stopping the action of the wafer carrier in response to the condition that the position data of the wafer carrier in the vertical direction exceeds the safety height range for any time. According to the invention, the height of the wafer carrier can be automatically and regularly detected, so that the wafer carrier is prevented from sagging after a certain number of wafers are conveyed, the wafer conveying precision is prevented from being influenced, and the risk that the wafer carrier rubs the wafers to cause particle pollution of a machine table is reduced.

The invention relates to a substrate processing apparatus and a method of cleaning a lock key. The present invention prevents a substrate from being contaminated by particles derived from a lock key and a member in contact with the lock key. A substrate processing apparatus for drying a substrate by replacing a liquid film formed on an upper surface of the substrate with a supercritical fluid is provided with: a pressure vessel having a drying chamber for drying the substrate therein; the cover body is used for blocking the opening of the drying chamber; the locking key is used for limiting the cover body to move from a closing position where the cover body closes the opening to an opening position where the cover body opens the opening; and a cleaning unit that cleans the lock key.

This disclosure provides a silicon wafer testing method, system, equipment, and silicon wafer processing method. The silicon wafer testing method includes: measuring each silicon wafer individually based on first preset measurement parameters to obtain the wafer's specifications, including at least one of particulate contamination degree, edge integrity, surface flatness, nano-morphology, and wafer thickness; determining whether the specifications meet a first target threshold corresponding to a first target level; if the determination result is that the specifications do not meet the first target threshold, performing a simulation test on the silicon wafer based on the specifications to predict whether the predicted specifications meet a second target threshold corresponding to a second target level under second preset measurement parameters; if the prediction result is that the predicted specifications do not meet the second target threshold, reworking or scrapping the silicon wafer. The silicon wafer testing method, system, equipment, and silicon wafer processing method disclosed herein improve equipment capacity and effective utilization rate.

Techniques described herein relate to methods and hardware for reducing contamination on wafers in chambers used for cleaning and pre-treating wafers prior to or after other processing steps such as electrodeposition. Generally, the chamber cleaning methods involve cleaning the chamber using a series of pressure changes and fluid delivery steps. The cleaning process shows many improvements over previous manual cleaning processes. In some cases, the chamber may be modified to include a barrier that separates the chamber into a clean zone and a dirty zone. This separation further reduces particle contamination on wafers. The method and hardware improvements may be practiced together or in isolation.

Disclosed in the embodiments of the present disclosure is a suspended hollow shaft magnetic levitation wafer manufacturing apparatus, which comprises a process chamber, a support component, a hollow shaft, an isolation sleeve, a holder, and an active magnetic levitation motor. The isolation sleeve is sealingly connected to a first opening at the top of the process chamber; the active magnetic levitation motor comprises a magnetic levitation stator and a magnetic levitation rotor, the magnetic levitation rotor, the hollow shaft and the holder being all arranged in a vacuum environment; the magnetic levitation rotor is fixedly connected to the hollow shaft, and the support component is provided in the hollow shaft; the magnetic levitation stator is arranged outside the isolation sleeve and drives, in a contactless active control mode, the magnetic levitation rotor to achieve stable levitation and rotation; one end of the holder is fixedly connected to the hollow shaft, and the other end of the holder is configured to bear a wafer, such that the wafer is arranged in the process chamber in a suspended manner. The present disclosure does not need to provide mechanical bearings and thus does not generate particle contamination, thereby remarkably improving the quality of films, greatly extending the overall service life of apparatuses, and further reducing the costs of maintenance and cleaning for apparatuses.

1. The name of the design product: oil particle contamination detector. 2. The use of the design product: used to detect the number and size of solid particles in oil to evaluate the cleanliness level of the oil. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

A measurement station for measuring particle contamination in a transport enclosure for the atmospheric transport and storage of semiconductor wafers includes a particle counter and an interface designed to be coupled to the shell of a transport enclosure in place of the door. The interface includes a sampling orifice fluidly connected to the particle counter. The measurement station also includes a clean-gas injection device having at least one injection line including at least one injection nozzle to be fluidly connected to a ventilation port of the transport enclosure coupled to the interface for injecting clean gas into the transport enclosure, from outside the transport enclosure, through the at least one ventilation port of the transport enclosure.

The invention discloses a gate valve structure and a cleaning system and method of semiconductor equipment. The gate valve structure comprises a valve box which is located at a wafer conveying channel between a vacuum conveying cavity and a process cavity, and a valve plate is arranged in the valve box so as to open and close the wafer conveying channel; and the gas distribution lining is located in the wafer conveying channel, a plurality of gas distribution holes are formed in the corner of the upper end face of the gas distribution lining, and the gas distribution lining is used for distributing and guiding clean gas through the gas distribution holes after the valve plate is closed, and at least purging fillets on the two sides of the valve plate. Through the gate valve structure, particle accumulation at dead angles of the wafer transfer gate valve can be removed, so that the problem of particle pollution caused by the fact that external particles are blown off to the surface of a wafer due to airflow disturbance in the wafer transfer process is reduced, the overall process performance in the long-term process can be improved, the equipment productivity is improved, and the production cost is reduced. In addition, the clean gas does not affect the process effect, and parts in the process cavity can be prevented from being over-etched by the clean gas, so that the service life of the parts is prolonged.

Substrate devices are described for supporting, transporting, and processing a reticle, including for supporting the reticle during a step of detecting particle contamination at a surface of the reticle prior to use of the reticle in an extreme ultraviolet (EUV) lithography process. The substrate device may be designed to prevent or reduce the amount of light used in a reticle back side inspection system, such as reflected from a substrate through edge structures of the substrate and redirected to a camera of the reticle back side inspection system.

The invention discloses a plasma enhanced chemical vapor deposition method and device. The method comprises the following steps: a first thin film deposition step: adjusting a plasma power supply system to ionize a first reaction gas introduced into a chamber at a first output deposition power so as to perform first thin film deposition on a wafer in the chamber; a first purging step: adjusting the plasma power supply system and keeping the plasma power supply system at a first output purging power, purging the wafer by using the purging gas introduced into the chamber, the first output purging power being lower than the first output deposition power; and a second thin film deposition step in which the plasma power supply system is adjusted to ionize a second reaction gas introduced into the chamber at a second output deposition power so as to perform second thin film deposition on the wafer, and the first output purging power is lower than the second output deposition power. According to the method, the low-power plasma state is maintained in the purging stage between step-by-step deposition, condensation of residual reactants is inhibited, and the defect rate of wafer particle pollution is greatly reduced.

The invention relates to the technical field of metal organic source purification, and particularly discloses an efficient purification process for trimethyl aluminum. The efficient purification process for trimethyl aluminum provided by the invention comprises the following steps: S1, carrying out infrasonic wave pretreatment on a trimethyl aluminum crude product and synchronously carrying out low-temperature cooling; s2, reduced pressure distillation: continuously extracting low-boiling-point impurities under a dynamic vacuum condition, and collecting fractions by adopting a cryogenic receiving tank; and S3, carrying out gradient condensation and vacuumizing on the residual mother liquor to obtain the ultra-pure trimethyl aluminum. According to the efficient purification process for trimethyl aluminum, the chemical adsorption state of trace impurities (such as dimethyl aluminum chloride, organic silicon and the like) is accurately destroyed through the infrasonic wave-low temperature coupling effect, and the removal efficiency of ppm-level impurities is remarkably improved in combination with vacuum gradient separation. The method has the advantages that aluminum oxide particle pollution caused by high temperature is avoided, meanwhile, energy consumption is greatly reduced, and the method is particularly suitable for large-scale continuous production of semiconductor-grade purity trimethyl aluminum.

Embodiments described herein generally relate to a processing apparatus having a spinner cover for preheating process gases. The apparatus includes a chamber body having sidewalls and a bottom wall defining an interior processing zone. The chamber also includes a substrate support, a ring support, and a spinner cover disposed within the interior processing zone of the chamber body. The spinner cover is disposed on the ring support. The spinner cover is an opaque quartz material. The spinner cover advantageously provides more efficient process gas heating, is constructed of a material capable of withstanding process conditions while providing more efficient and uniform processing, and has a low CTE to reduce particle contamination due to excessive expansion during processing.

A system for controlling a temperature of a stage and reducing heat transfer from the stage to a sample is disclosed. The system may reduce a temperature difference between a first component of the stage and a second component of the stage to about 0.5 °C. A sample under inspection may not be exposed to significant changes in temperature and may not become contaminated via thermal-induced particle contamination.

The invention discloses an object surface radioactive pollution measuring system and method and relates to the technical field of nuclear radiation detection. The object surface radioactive pollution measuring system comprises a nuclear robot, a detector and a PC (Personal Computer), the nuclear robot comprises a movable machine base and a multi-degree-of-freedom mechanical arm, and a clamping jaw is installed at the tail end of the multi-degree-of-freedom mechanical arm. The detector comprises a CMOS sensor, a circuit board, a chip board and a shell. The shell is clamped on the clamping jaw; and the PC is in communication connection with the chip board. An object surface alpha and beta particle pollution measurement method is based on an object surface radiation pollution measurement system, and comprises the following steps: data acquisition; extracting features; and pollution positioning. The device is used for automatically measuring alpha and beta polluted surfaces; the method can realize rapid identification, positioning and quantitative analysis of a polluted area, has the characteristics of high automation, high precision and high sensitivity, and is suitable for various application scenes, such as radioactive waste liquid surface pollution measurement and part surface pollution scanning.

This application discloses a graphite support stage and epitaxial equipment. The graphite support stage includes a substrate made of graphite material and a separate component, which is detachably disposed on the substrate and adheres to the surface of the substrate. A support area for supporting a wafer is provided on the side of the separate component facing away from the substrate. The substrate supports the separate component and transfers heat to it. Compared to related technologies, the graphite support stage disclosed in this application adopts a separate design. The substrate, as a permanent support component, can be used for a long time, requiring only replacement of the easily worn separate component, significantly reducing spare parts costs and equipment downtime. Furthermore, the separate component can be replaced periodically, ensuring that each process is performed on a clean and intact support area, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging. This improves the thickness uniformity and doping concentration consistency of the epitaxial layer, thereby increasing product yield.

The utility model belongs to the technical field of oil product detection, and particularly relates to an oil product particle pollutant detection device which comprises a detection box, a connecting seat fixedly connected with the inner bottom surface of the detection box, and a particle sensor movably mounted on the connecting seat, through cooperative use of insertion blocks and first springs, when the box cover needs to be opened, the insertion blocks on the two sides are pressed down, the insertion blocks do not limit the sliding blocks any more, a worker can push the box cover and open the box cover, and when the box cover needs to be closed, the worker only needs to push the box cover to drive the box cover to move in guide rails of the sliding blocks on the two sides. When the insertion block moves to the position of the first connecting hole, the first spring is changed into a loose state from a compressed state, and the insertion block is driven to enter the first connecting hole to limit the box cover, so that the box cover is closed, the box cover is opened and closed more conveniently, a worker can maintain the interior of the detection box conveniently, and the oil product detection efficiency is improved.

A needle seat structure for reducing particle pollution of an electrode needle of a static eliminator belongs to the field of static elimination. Comprising an electrode needle, a cylindrical electrode needle mounting piece fixedly connected with the electrode needle is arranged on the electrode needle, and a cylindrical boss is arranged on the top of the cylindrical electrode needle mounting piece; an electric connection fixing piece with an inverted barrel-shaped structure is arranged; the electrode needle is located at the center of the shaft and penetrates through the whole electrode needle mounting piece, and the tail of the electrode needle is higher than a cylindrical boss at the top of the electrode needle mounting piece; the electrode needle mounting piece and the electric connection fixing piece are fixed together to form a cylindrical structure as a whole; an air channel component which is matched with the electrode needle mounting piece and is used for forming a circular-tube-shaped air channel is arranged; the air channel component is of an axial symmetry structure and is coaxially installed on the rod core of the ion rod with the electrode needle installation piece. By arranging a circular-tube-shaped air channel structure, the protection space of the electrode needle and the needle cone part of the electrode needle is enlarged, and the adsorption probability of pollution particles is reduced.