72 results about "Particle contamination" patented technology

The invention provides a transmission mechanism protection structure of a vacuum reaction cavity, and relates to the technical field of semiconductor equipment. The device comprises an outer cavity and an inner cavity which are designed to be nested, and further comprises a heating device and a rotating mechanism, the outer cavity is arranged outside the inner cavity in a sleeving mode, and a gas filling gap is formed between the outer cavity and the inner cavity; the heating device is arranged on the outer side of the outer cavity so as to transfer heat into the inner cavity through heat conduction and heat radiation of the outer cavity. The problems of particle pollution, space occupation, uneven temperature, limited applicability and the like can be remarkably solved, and the operation reliability and maintenance convenience of equipment are improved.

The invention discloses a method for testing dynamic granularity of a valve, and belongs to the technical field of ultra-pure fluid systems. According to the method, through components such as an air inlet pressure regulating valve, a pressure gauge, a high-pressure controller, a particle counter, a main channel and a test channel, accurate monitoring of dynamic particle pollution of the valve under the actual working condition is achieved; the method comprises the following steps: 1, ensuring that a particle counter works under stable sampling flow through a flow regulation compensation mechanism, and improving the accuracy of measured data; 2, static purging is carried out, initial particle pollution is effectively removed, and a clean basic environment is provided for dynamic testing; step 3, dynamically purging the tested piece by detecting the switching frequency, simulating the actual opening and closing process of the valve, and dynamically evaluating the cleanliness of the tested piece; according to the invention, the limitation of the traditional static test is overcome, the dynamic particle release characteristics of the valve are truly reflected, and a comprehensive and accurate particle size test result is provided for an ultra-pure fluid system.

A vaporizing device comprising an intake gas filtration and scrubbing unit to reduce particle contamination and normalize the temperature and humidity of an intake gas before introducing it into a reaction chamber. The reaction chamber generates an aerosol from a precursor composition and includes a reservoir to hold the precursor, a heater to heat the composition for a thermally mediated reaction, and a control system to regulate the heater. The device further includes a particle size selection system with impaction surfaces to select particles of a desired size, a condenser to condition the aerosol, and a mouthpiece to deliver the aerosol to a user. The vaporizing device may also include features such as a valve system for purging, a condenser designed for laminar flow, and materials designed for optimal infrared radiation transmission and blocking. A sensor is incorporated to monitor the temperature of the heater.

The invention relates to a copper cluster scintillator constructed on the basis of diphenyl-2-pyridine phosphine and cuprous iodide and a preparation method and application of the copper cluster scintillator. The preparation method comprises the following steps: constructing a copper cluster scintillator by using diphenyl-2-pyridine phosphine and cuprous iodide, and preparing the copper cluster scintillator into a semitransparent scintillator film by using polyvinylpyrrolidone as a high-molecular polymer matrix and polyethylene glycol terephthalate as a spin-coating substrate; the scintillator film and a photomultiplier are optically coupled and integrated with nuclear electronics equipment to develop an alpha / beta particle pollution monitor. The copper cluster scintillator provided by the invention has excellent X-ray luminescence performance, and can realize high-sensitivity scintillation response to alpha / beta particles; the surface pollution monitor can realize sensitive detection of alpha / beta particles in the environment, and has important application value in the field of environmental radiation detection.

A system and method for increasing a gas flow across a substrate in a charged particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising: a first gas inlet fluidly connected to a charged particle beam optical element array and configured to guide a first gas flow downstream toward a substrate within the charged particle beam optical element array at a first flow rate; and a second gas inlet configured to guide a second gas flow toward the substrate at a second flow rate. The first and second gas flows are merged to form a transverse gas flow across the top surface of the substrate, the transverse gas flow having a flow rate higher than either the first or second flow rate.

The invention relates to a multi-station optical filter surface coating device and a method thereof, and belongs to the technical field of coating devices.The method comprises the steps that a magnetic suspension conveying system, a sputtering system and a dynamic air curtain isolation system are arranged in a single tunnel type main vacuum chamber, the magnetic suspension transport system comprises a linear driving coil mounted outside the cavity, a magnetic suspension tray arranged inside the cavity and used for bearing a substrate, and a position detection unit mounted outside the cavity, and the tray and the coil realize magnetic field coupling through the cavity wall; the sputtering system comprises a plurality of sputtering target materials which are sequentially mounted on the inner top wall of the cavity, and the core progress of the invention is that a set of magnetic suspension transportation system is adopted, so that the problem of particle pollution is solved; the system is characterized in that the linear driving coil is arranged outside the cavity, the magnetic suspension tray for bearing the substrate is contained in the cavity, no mechanical connection exists between the linear driving coil and the magnetic suspension tray, and magnetic field coupling is achieved only through the non-magnetic cavity wall.

The invention discloses a wafer turnover device, and the device comprises a wafer clamping mechanism which is disposed on a mounting rack and is used for clamping the edge of a wafer and driving the wafer to turn over; the wafer overturning mechanism is associated with the wafer clamping mechanism and is used for driving the wafer clamping mechanism to rotate so as to overturn the clamped wafer; and the wafer caching mechanism is arranged on the mounting rack and is used for receiving and temporarily storing wafers conveyed by an external manipulator and providing a wafer clamping station for the wafer clamping mechanism. The core innovation of the mechanism lies in that overturning is realized by clamping the edge of the wafer, any contact with the front and back surfaces of the wafer is completely avoided, particle pollutants, scratches or mechanical stress damage possibly introduced by clamping the front or back surface of a traditional overturning mechanism are eliminated, and the risk of secondary pollution is greatly reduced.

This disclosure provides a method, system, and epitaxial wafer for improving particulate contamination of silicon wafers during epitaxy. The method includes: selecting at least one test silicon wafer from a batch of silicon wafers to be processed, and determining a target power range to be applied to the epitaxial furnace based on the test results of the test silicon wafer; adjusting the effective power applied to the epitaxial furnace to the target power range before the silicon wafer to be processed is fed into the epitaxial chamber of the epitaxial furnace, so that the temperature inside the epitaxial chamber is within a target temperature range; maintaining the effective power of the epitaxial furnace within the target power range until the silicon wafer to be processed enters the epitaxial chamber, thereby using the target temperature range to suppress thermal deformation of the silicon wafer to be processed; and growing an epitaxial layer on the surface of the silicon wafer to be processed after it enters the epitaxial chamber. This disclosure can effectively reduce particulate contamination of the silicon wafer to be processed during epitaxy.

The invention provides a gas tank, thin film deposition equipment, a control method and a storage medium. The gas tank comprises a tank body, a cold air pipeline, a vaporization detector and a controller. An air inlet is formed in the box wall of the box body, and a vaporizer of a precursor is arranged in the box body. The first end of the cold air pipeline is connected with a cold air source, the second end of the cold air pipeline is connected with the air inlet of the box body, and a valve is arranged in the cold air pipeline. And the vaporization detector is configured at a gas outlet of the vaporizer. The controller is connected with the valve and the vaporization detector, and is configured to obtain the vaporization rate of the vaporizer to the precursor through the vaporization detector; and the opening degree of the valve is adjusted according to the vaporization rate, so that the environment temperature in the box body is adjusted. The vaporizing rate of the vaporizer to the precursor can be detected, the opening degree of the valve of the cold air pipeline is adjusted accordingly, sufficient vaporizing of the vaporizer to the precursor is ensured, and the problem that particle pollution is introduced into the process chamber due to insufficient vaporizing is avoided.

The invention relates to a substrate processing apparatus and a method of cleaning a lock key. The present invention prevents a substrate from being contaminated by particles derived from a lock key and a member in contact with the lock key. A substrate processing apparatus for drying a substrate by replacing a liquid film formed on an upper surface of the substrate with a supercritical fluid is provided with: a pressure vessel having a drying chamber for drying the substrate therein; the cover body is used for blocking the opening of the drying chamber; the locking key is used for limiting the cover body to move from a closing position where the cover body closes the opening to an opening position where the cover body opens the opening; and a cleaning unit that cleans the lock key.

This disclosure provides a silicon wafer testing method, system, equipment, and silicon wafer processing method. The silicon wafer testing method includes: measuring each silicon wafer individually based on first preset measurement parameters to obtain the wafer's specifications, including at least one of particulate contamination degree, edge integrity, surface flatness, nano-morphology, and wafer thickness; determining whether the specifications meet a first target threshold corresponding to a first target level; if the determination result is that the specifications do not meet the first target threshold, performing a simulation test on the silicon wafer based on the specifications to predict whether the predicted specifications meet a second target threshold corresponding to a second target level under second preset measurement parameters; if the prediction result is that the predicted specifications do not meet the second target threshold, reworking or scrapping the silicon wafer. The silicon wafer testing method, system, equipment, and silicon wafer processing method disclosed herein improve equipment capacity and effective utilization rate.

Techniques described herein relate to methods and hardware for reducing contamination on wafers in chambers used for cleaning and pre-treating wafers prior to or after other processing steps such as electrodeposition. Generally, the chamber cleaning methods involve cleaning the chamber using a series of pressure changes and fluid delivery steps. The cleaning process shows many improvements over previous manual cleaning processes. In some cases, the chamber may be modified to include a barrier that separates the chamber into a clean zone and a dirty zone. This separation further reduces particle contamination on wafers. The method and hardware improvements may be practiced together or in isolation.

Disclosed in the embodiments of the present disclosure is a suspended hollow shaft magnetic levitation wafer manufacturing apparatus, which comprises a process chamber, a support component, a hollow shaft, an isolation sleeve, a holder, and an active magnetic levitation motor. The isolation sleeve is sealingly connected to a first opening at the top of the process chamber; the active magnetic levitation motor comprises a magnetic levitation stator and a magnetic levitation rotor, the magnetic levitation rotor, the hollow shaft and the holder being all arranged in a vacuum environment; the magnetic levitation rotor is fixedly connected to the hollow shaft, and the support component is provided in the hollow shaft; the magnetic levitation stator is arranged outside the isolation sleeve and drives, in a contactless active control mode, the magnetic levitation rotor to achieve stable levitation and rotation; one end of the holder is fixedly connected to the hollow shaft, and the other end of the holder is configured to bear a wafer, such that the wafer is arranged in the process chamber in a suspended manner. The present disclosure does not need to provide mechanical bearings and thus does not generate particle contamination, thereby remarkably improving the quality of films, greatly extending the overall service life of apparatuses, and further reducing the costs of maintenance and cleaning for apparatuses.

1. The name of the design product: oil particle contamination detector. 2. The use of the design product: used to detect the number and size of solid particles in oil to evaluate the cleanliness level of the oil. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

A measurement station for measuring particle contamination in a transport enclosure for the atmospheric transport and storage of semiconductor wafers includes a particle counter and an interface designed to be coupled to the shell of a transport enclosure in place of the door. The interface includes a sampling orifice fluidly connected to the particle counter. The measurement station also includes a clean-gas injection device having at least one injection line including at least one injection nozzle to be fluidly connected to a ventilation port of the transport enclosure coupled to the interface for injecting clean gas into the transport enclosure, from outside the transport enclosure, through the at least one ventilation port of the transport enclosure.

The invention discloses a gate valve structure and a cleaning system and method of semiconductor equipment. The gate valve structure comprises a valve box which is located at a wafer conveying channel between a vacuum conveying cavity and a process cavity, and a valve plate is arranged in the valve box so as to open and close the wafer conveying channel; and the gas distribution lining is located in the wafer conveying channel, a plurality of gas distribution holes are formed in the corner of the upper end face of the gas distribution lining, and the gas distribution lining is used for distributing and guiding clean gas through the gas distribution holes after the valve plate is closed, and at least purging fillets on the two sides of the valve plate. Through the gate valve structure, particle accumulation at dead angles of the wafer transfer gate valve can be removed, so that the problem of particle pollution caused by the fact that external particles are blown off to the surface of a wafer due to airflow disturbance in the wafer transfer process is reduced, the overall process performance in the long-term process can be improved, the equipment productivity is improved, and the production cost is reduced. In addition, the clean gas does not affect the process effect, and parts in the process cavity can be prevented from being over-etched by the clean gas, so that the service life of the parts is prolonged.

Substrate devices are described for supporting, transporting, and processing a reticle, including for supporting the reticle during a step of detecting particle contamination at a surface of the reticle prior to use of the reticle in an extreme ultraviolet (EUV) lithography process. The substrate device may be designed to prevent or reduce the amount of light used in a reticle back side inspection system, such as reflected from a substrate through edge structures of the substrate and redirected to a camera of the reticle back side inspection system.

The invention discloses a plasma enhanced chemical vapor deposition method and device. The method comprises the following steps: a first thin film deposition step: adjusting a plasma power supply system to ionize a first reaction gas introduced into a chamber at a first output deposition power so as to perform first thin film deposition on a wafer in the chamber; a first purging step: adjusting the plasma power supply system and keeping the plasma power supply system at a first output purging power, purging the wafer by using the purging gas introduced into the chamber, the first output purging power being lower than the first output deposition power; and a second thin film deposition step in which the plasma power supply system is adjusted to ionize a second reaction gas introduced into the chamber at a second output deposition power so as to perform second thin film deposition on the wafer, and the first output purging power is lower than the second output deposition power. According to the method, the low-power plasma state is maintained in the purging stage between step-by-step deposition, condensation of residual reactants is inhibited, and the defect rate of wafer particle pollution is greatly reduced.

The invention relates to the technical field of metal organic source purification, and particularly discloses an efficient purification process for trimethyl aluminum. The efficient purification process for trimethyl aluminum provided by the invention comprises the following steps: S1, carrying out infrasonic wave pretreatment on a trimethyl aluminum crude product and synchronously carrying out low-temperature cooling; s2, reduced pressure distillation: continuously extracting low-boiling-point impurities under a dynamic vacuum condition, and collecting fractions by adopting a cryogenic receiving tank; and S3, carrying out gradient condensation and vacuumizing on the residual mother liquor to obtain the ultra-pure trimethyl aluminum. According to the efficient purification process for trimethyl aluminum, the chemical adsorption state of trace impurities (such as dimethyl aluminum chloride, organic silicon and the like) is accurately destroyed through the infrasonic wave-low temperature coupling effect, and the removal efficiency of ppm-level impurities is remarkably improved in combination with vacuum gradient separation. The method has the advantages that aluminum oxide particle pollution caused by high temperature is avoided, meanwhile, energy consumption is greatly reduced, and the method is particularly suitable for large-scale continuous production of semiconductor-grade purity trimethyl aluminum.

Embodiments described herein generally relate to a processing apparatus having a spinner cover for preheating process gases. The apparatus includes a chamber body having sidewalls and a bottom wall defining an interior processing zone. The chamber also includes a substrate support, a ring support, and a spinner cover disposed within the interior processing zone of the chamber body. The spinner cover is disposed on the ring support. The spinner cover is an opaque quartz material. The spinner cover advantageously provides more efficient process gas heating, is constructed of a material capable of withstanding process conditions while providing more efficient and uniform processing, and has a low CTE to reduce particle contamination due to excessive expansion during processing.

The invention discloses an object surface radioactive pollution measuring system and method and relates to the technical field of nuclear radiation detection. The object surface radioactive pollution measuring system comprises a nuclear robot, a detector and a PC (Personal Computer), the nuclear robot comprises a movable machine base and a multi-degree-of-freedom mechanical arm, and a clamping jaw is installed at the tail end of the multi-degree-of-freedom mechanical arm. The detector comprises a CMOS sensor, a circuit board, a chip board and a shell. The shell is clamped on the clamping jaw; and the PC is in communication connection with the chip board. An object surface alpha and beta particle pollution measurement method is based on an object surface radiation pollution measurement system, and comprises the following steps: data acquisition; extracting features; and pollution positioning. The device is used for automatically measuring alpha and beta polluted surfaces; the method can realize rapid identification, positioning and quantitative analysis of a polluted area, has the characteristics of high automation, high precision and high sensitivity, and is suitable for various application scenes, such as radioactive waste liquid surface pollution measurement and part surface pollution scanning.

This application discloses a graphite support stage and epitaxial equipment. The graphite support stage includes a substrate made of graphite material and a separate component, which is detachably disposed on the substrate and adheres to the surface of the substrate. A support area for supporting a wafer is provided on the side of the separate component facing away from the substrate. The substrate supports the separate component and transfers heat to it. Compared to related technologies, the graphite support stage disclosed in this application adopts a separate design. The substrate, as a permanent support component, can be used for a long time, requiring only replacement of the easily worn separate component, significantly reducing spare parts costs and equipment downtime. Furthermore, the separate component can be replaced periodically, ensuring that each process is performed on a clean and intact support area, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging. This improves the thickness uniformity and doping concentration consistency of the epitaxial layer, thereby increasing product yield.

The utility model belongs to the technical field of oil product detection, and particularly relates to an oil product particle pollutant detection device which comprises a detection box, a connecting seat fixedly connected with the inner bottom surface of the detection box, and a particle sensor movably mounted on the connecting seat, through cooperative use of insertion blocks and first springs, when the box cover needs to be opened, the insertion blocks on the two sides are pressed down, the insertion blocks do not limit the sliding blocks any more, a worker can push the box cover and open the box cover, and when the box cover needs to be closed, the worker only needs to push the box cover to drive the box cover to move in guide rails of the sliding blocks on the two sides. When the insertion block moves to the position of the first connecting hole, the first spring is changed into a loose state from a compressed state, and the insertion block is driven to enter the first connecting hole to limit the box cover, so that the box cover is closed, the box cover is opened and closed more conveniently, a worker can maintain the interior of the detection box conveniently, and the oil product detection efficiency is improved.

A needle seat structure for reducing particle pollution of an electrode needle of a static eliminator belongs to the field of static elimination. Comprising an electrode needle, a cylindrical electrode needle mounting piece fixedly connected with the electrode needle is arranged on the electrode needle, and a cylindrical boss is arranged on the top of the cylindrical electrode needle mounting piece; an electric connection fixing piece with an inverted barrel-shaped structure is arranged; the electrode needle is located at the center of the shaft and penetrates through the whole electrode needle mounting piece, and the tail of the electrode needle is higher than a cylindrical boss at the top of the electrode needle mounting piece; the electrode needle mounting piece and the electric connection fixing piece are fixed together to form a cylindrical structure as a whole; an air channel component which is matched with the electrode needle mounting piece and is used for forming a circular-tube-shaped air channel is arranged; the air channel component is of an axial symmetry structure and is coaxially installed on the rod core of the ion rod with the electrode needle installation piece. By arranging a circular-tube-shaped air channel structure, the protection space of the electrode needle and the needle cone part of the electrode needle is enlarged, and the adsorption probability of pollution particles is reduced.

The invention relates to a vacuum filling system. The system comprises a fixedly-arranged filling assembly, a bracket arranged below the filling assembly and a sealing sleeve which is coaxially arranged between the bracket and the filling assembly and can ascend and descend. During filling, the bracket drives the packing material to ascend, so that the opening of the packing material abuts against the sealing body at the lower end of the sealing sleeve to form first sealing; and the bracket continuously ascends to push the sealing sleeve, so that the upper end of the sealing sleeve is matched with the filling assembly to form second sealing, and a closed filling cavity is formed among the packing material, the sealing sleeve and the filling assembly. In the whole filling and packing material lifting process, the filling needle is kept still all the time. According to the invention, active lifting of the packing material is matched with a friction-free sealing structure, so that particle pollution caused by pipeline deformation and relative sliding friction is avoided, the packing material is separated from the weighing device when being lifted, stress interference is eliminated, and the precision of in-situ online weighing is ensured.

The invention provides an ultra-clean PFA connector with self-adaptive sealing and particle pollution prevention functions, and relates to the field of PFA connectors, the ultra-clean PFA connector comprises a male connector, an adapting pipe is fixedly mounted at one end of the male connector, a butt joint pipe is fixedly mounted at the front end of the male connector, a guide pipe penetrates out of the interior of the butt joint pipe, a connecting pipe penetrates out of the interior of the guide pipe, and the connecting pipe is fixedly connected with the adapting pipe. When the male connector, the adapting pipe, the butt joint pipe, the guide pipe, the connecting pipe and the female connector are fixed after mutual butt joint is completed, the adapting pipe is used for butt joint of the male connector and an external pipeline, the connecting pipe is used for butt joint of the male connector and the external pipeline, and the connecting pipe is used for butt joint of the male connector and the external pipeline. The connecting pipe is used for being in butt joint with another external pipeline, so that a circulation form is formed, the guide pipe penetrates through the sealing pressing ring and compresses the belleville spring in the blind hole under the abutting action of the butt joint pipe, meanwhile, the first rubber block and the second rubber block fixed to the reinforcing plate are inserted into the clamping groove, and the double-layer sealing effect is achieved inside.

A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a bonded pair of wafers, where the bonded pair of wafers are bonded with a bonding tool. The wafer shape metrology sub-system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements from the wafer shape sub-system; convert the stress-free shape measurements into an overlay distortion pattern; detect one or more localized deviations in the bonded pair of wafers in order to identify one or more contaminant particles on the bonding tool; and report the one or more localized deviations in the bonded pair of wafers.

The application provides an exposure machine focus compensation method and an exposure machine focus compensation system. The exposure machine focus compensation method obtains multiple sets of GRP deformation correction mapping graphs after rotation and Z-direction fluctuation amounts after rotation through rotation, calculates the Z-direction fluctuation difference values by taking the first Z-direction fluctuation amount, identifies whether the wafer surface is abnormal by taking the Z-direction fluctuation difference values, and stops compensation when the wafer surface is abnormal, so as to avoid misoperation, actively exclude abnormal wafers, reduce the production wafer scrapping, and quickly screen the standard wafer state during the test process. Unexpected technical effects are achieved: abnormal standard wafers (such as particle pollution) can be screened in advance, the MGSC miscompensation link is blocked, and the key size defocus is avoided from the source.

A wafer is supported on a wafer support structure such that a lower peripheral open region exists between a peripheral portion of a bottom surface of the wafer and an edge ring structure. The edge ring structure is configured to circumscribe both the wafer support structure and the wafer. A plasma is generated above a top surface of the wafer. The plasma causes accumulation of byproduct material within the lower peripheral open region. A byproduct volatizing gas is supplied to the lower peripheral open region to control the accumulation of the byproduct material within the lower peripheral open region during generation of the plasma. Use of the byproduct volatizing gas to control the accumulation of the byproduct material within the lower peripheral open region serves to prevent electrical arcing and particle contamination.