The invention discloses a substrate inverted growth HVPE device, and belongs to the technical field of HVPE devices, the substrate inverted growth HVPE device comprises an upper
flange, lifting units are arranged on the two sides of the top of the upper
flange, and a
metal shaft is rotatably connected to the center of the interior of the upper
flange through a sealing bearing. According to the device, a driving motor drives a circular shaft, a driving wheel, a synchronous belt, a driven wheel, a
metal shaft, a temperature detection unit, a non-
metal shaft, a mounting seat, an annular seat, a substrate seat and a
seed crystal or a substrate to rotate, so that the growth surface of the
seed crystal or the substrate is in uniform contact with reaction gas rising from the lower part in a reaction seat, and the reaction gas rising from the lower part is in uniform contact with the growth surface of the
seed crystal or the substrate; compared with the prior art,
convection is more natural, obtaining of more uniform film thickness and component distribution is facilitated,
crystal defects caused by particulate matter
pollution during
crystal growth are effectively overcome through the substrate inversion mode, the risks of fragmentation, scrapping or grade decline caused by the defects are reduced, and the
crystal quality is greatly improved.