103 results about "Deposition temperature" patented technology

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

The invention provides fiber core glass as well as a preparation method and application thereof. The fiber core glass comprises the following components in percentage by mole: 31-43% of SiO2, 3-5% of Al2O3, 14-20% of B2O3 and 6-10% of CaO; the ceramic is prepared from the following components in percentage by weight: 2 to 4 percent of ZnO, 3 to 7 percent of BaO, 5 to 7 percent of Bi2O3, 2 to 4 percent of Li2O, 1 to 3 percent of Y2O3, 5 to 8 percent of TiO2, 7 to 10 percent of ZrO2, 3 to 5 percent of P2O5, 3 to 5 percent of Ta2O5, 2 to 4 percent of Nb2O5 and 1 to 3 percent of PbO. The technical problem to be solved is how to prepare the fiber core glass and use the fiber core glass for preparing the glass with the gradient refractive index, so that the fiber core glass has more advantages compared with existing MCVD and other vapor deposition processes, complex gas flow and deposition temperature real-time regulation and control are not needed, and the glass with the gradient refractive index can be prepared only through fiber core glass component design, high-temperature ion diffusion, multi-stage wire drawing and other processes. The continuous and smooth gradient refractive index structure can be formed by using the method, the process is simpler, the preparation period is shorter, and the process uniformity is easier to control; and the prepared glass with the gradient refractive index can reduce optical loss and crosstalk, improve the imaging resolution, can be stably made into devices such as an optical fiber panel and the like, and meets the requirements of multiple fields, so that the glass is more suitable and practical.

A method for manufacturing a TOPCon cell includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150° C. to 200° C., the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

The invention discloses physical vapor deposition equipment, an electrochromic device and a preparation method of the electrochromic device, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing the WO3 electrochromic layer on the surface of the first ITO layer, wherein the oxygen content is any one of 42.5-52.5%; sputtering and depositing a tungsten oxide ion conducting layer with a preset thickness on the electrochromic layer, wherein the oxygen content of the corresponding chamber is any one of 35%-45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; a second ITO layer is deposited on the ion storage layer, and the electrochromic device is prepared after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any one value from 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any one value from 450 DEG C to 500 DEG C. The electrochromic device prepared by the invention has the characteristics of high transmittance and low sheet resistance.

This invention relates to an all-solid-state sodium-ion battery and its preparation method. The battery includes a sodium metal anode, a solid electrolyte, and a cathode. The sodium metal anode is deposited onto a metal foil via physical vapor deposition, and a sodium layer with a thickness of 0.5 μm to 10 μm is formed on the metal foil surface by controlling at least one of the deposition time, deposition temperature, or voltage. The solid electrolyte is prepared by mixing a polymer, sodium salt, binder, and water, casting the resulting mixture onto a substrate, and then vacuum drying it. The cathode is an active material containing sodium ions. The all-solid-state sodium-ion battery preparation method provided by this invention is easy to industrialize. The prepared all-solid-state sodium-ion battery exhibits excellent cycle performance, energy density, and power density, and its safety is improved, showing promising market application prospects.

The invention provides a passivation method and a preparation method of a solar cell, a photovoltaic module and a photovoltaic system. The passivation method comprises the following steps: depositing a passivation layer on the surface of a P-type doping layer; heating the solar cell to a first preset temperature; depositing an antireflection layer on the surface of the passivation layer; after the antireflection layer is formed, the solar cell is heated to a second preset temperature for annealing, and the first preset temperature and the second preset temperature are both higher than the deposition temperature when the antireflection layer is formed. According to the passivation method of the solar cell, part of redundant hydrogen generated in aluminum oxide and silicon nitride is slowly released in advance at the temperature higher than the deposition temperature between and after the deposition of the antireflection layer, and generation of poor film explosion is avoided. Meanwhile, the compactness of the thin film layer is increased to a certain extent, a good protection barrier is formed for hydrogen passivation, UV attenuation is improved, and UV60 attenuation is reduced to 0.64% from 0.94% in the past.

The invention discloses a preparation method of a composite material, the composite material, an electrode plate and a battery, in the preparation method of the composite material, porous carbon is firstly subjected to first carbon deposition in fluidization equipment and then placed in rotary equipment to be subjected to second carbon deposition, so that the carbon coating efficiency is improved, and meanwhile, the composite material is prepared. By controlling the deposition temperatures of the first carbon deposition and the second carbon deposition to be the same, the carbon source types to be the same and the gas-material ratios to be the same, the coating uniformity and coating sufficiency of the carbon layer are improved, and the prepared composite material has good electrochemical performance, can be applied to preparation of an electrode of a battery and is beneficial to improvement of the performance of the battery.

The application provides a target structure for preparing a metal element doped gallium-based compound film, and relates to the field of gallium-based compound film preparation. The target structure for preparing the metal element doped gallium-based compound film comprises a target material containing disc and a permanent magnet cover which are stacked from top to bottom, the target material containing disc is used for containing target material, the permanent magnet cover is used for covering a permanent magnet, the opening directions of the target material containing disc and the permanent magnet cover are opposite to each other, and a heat conduction plate is arranged between the target material containing disc and the permanent magnet cover, the target material containing disc comprises a target material tray and a metal block groove, the metal block groove is arranged below the target material tray, and the containing space of the metal block groove is communicated with the containing space of the target material tray. The application has the following advantages: low deposition temperature, large film forming area, no pollution, simple doping process, high growth rate, low preparation cost, and adjustable doping concentration.

Manufacturing a detector device such as a microchannel plate (MCP) includes using a first atomic layer deposition (ALD) process with first precursor materials to deposit a resistive layer on a substrate and thereby form a resistive-coated substrate, the first precursor materials including a conductive rhenium material and an insulative aluminum material. The resistive layer is deposited as interspersed conductive and insulative regions of a rhenium constituent and an aluminum constituent respectively in a predetermined ratio. A second ALD process with second precursor materials is used to deposit an emissive layer on the resistive-coated substrate, the emissive layer being constituted to generate electrical carriers in use of the detector device to be sensed by external sensing circuitry as detected events. The first ALD process is performed at a deposition temperature sufficiently above 200° C. to obtain a dark-current contribution of the resistive layer of less than about 600 Hz / cm2.

The present disclosure relates to a plurality of host materials and organic electroluminescent devices comprising the same. The present disclosure may provide a plurality of host materials having a composition favorable to thermal denaturation due to a low deposition temperature, while improving hole properties and electronic properties of HOMO and LUMO, by comprising separate compounds represented by formulas 1 and 2 into a light-emitting layer. By comprising the plurality of host materials of the present disclosure, it is possible to provide an organic electroluminescent device having a lower driving voltage, higher luminous efficiency and / or longer lifetime.

The invention discloses a TOPCon photovoltaic cell and a preparation method thereof, and relates to the technical field of photovoltaic cells. The LPCVD furnace is a tubular diffusion furnace and is provided with a furnace mouth area, a furnace middle area and a furnace tail area; reaction gas outlets are respectively formed in the furnace mouth area, the furnace middle area and the furnace tail area; the method comprises the steps that in a deposition chamber of an LPCVD furnace, an n-step deposition process is adopted for preparing an amorphous silicon layer, n is larger than or equal to 2, and the deposition temperature of a furnace mouth area is not lower than the deposition temperature of a furnace middle area and the deposition temperature of a furnace tail area; the deposition temperature of the furnace mouth area in the ith step is not lower than the deposition temperature of the furnace mouth area in the (i + 1) th step, and i is an integer from 1 to n-1; the deposition pressure in the ith step is lower than that in the (i + 1) th step; the reaction gas flow of the furnace mouth area in the ith step is lower than the reaction gas flow of the furnace mouth area in the (i + 1) th step. According to the method, the amorphous silicon layer is deposited through multiple steps, and the deposition temperature, flow and pressure are cooperatively controlled, so that furnace mouth gas accumulation is effectively inhibited, the film thickness uniformity of the silicon wafer at the furnace mouth position is effectively improved, and the appearance white edge defect of the battery piece is eliminated.

This invention discloses a high-crystal-quality light-emitting diode epitaxial wafer and its fabrication method. The method includes: after depositing a buffer layer on a substrate and before depositing a three-dimensional nucleation layer, performing a high-temperature recrystallization treatment on the buffer layer under low-pressure and high-temperature conditions in an atmosphere containing H2 and NH3 but without N2; subsequently, sequentially depositing a low-temperature three-dimensional nucleation layer, a three-dimensional nucleation transition layer, and a high-temperature three-dimensional nucleation layer in the same N2-free atmosphere; wherein the deposition process of the three-dimensional nucleation transition layer includes a gradual increase in deposition temperature and trimethylgallium flux with increasing deposition time. This invention, through buffer layer recrystallization treatment and the use of a "double-gradient" transition layer process to grow the three-dimensional nucleation layer in an N2-free atmosphere, effectively reduces N vacancies and GaN epitaxial layer defects, improves crystal quality, reduces leakage current, and enhances electrostatic breakdown resistance.

This invention provides a method for preparing a standard silicon wafer and a method for calibrating a flatness measurement device. The method for preparing the standard silicon wafer includes: providing a substrate; depositing a polycrystalline silicon layer on the surface of the substrate; and, during the deposition of the polycrystalline silicon layer, controlling the deposition temperature and / or the flow rate of the reactive gas to distribute the different sizes of the polycrystalline silicon layer according to a set ratio, thereby ensuring that the surface roughness of the polycrystalline silicon layer is within a target range; wherein the process conditions for depositing the polycrystalline silicon layer include: using a silicon source gas as the reactive gas, a deposition temperature selectable in the range of 800~1080℃, and a silicon source gas flow rate selectable in the range of 5~30 SLM. The preparation method provided by this invention controls the grain size of the polycrystalline silicon layer by controlling the deposition temperature and / or the flow rate of the reactive gas, thus enabling the repeatable and controllable preparation of a standard wafer with specific roughness and excellent uniformity for calibration of a flatness measurement device.

This invention discloses a method for improving the electrical stability of nickel oxide thin films. Increasing the deposition temperature of the nickel oxide film and combining it with a post-deposition oxygen plasma surface treatment process can effectively suppress the degradation of the conductivity of the nickel oxide film. The concentration of conductive holes in nickel oxide films decreases sharply with the post-deposition storage time, leading to a significant increase in film resistivity and a substantial reduction in the reliability of devices based on this film. In this invention, by increasing the deposition temperature of the nickel oxide film, its crystallinity and structural stability are improved; and by treating the film surface with oxygen plasma, intrinsic point defects within the film are stabilized and the film surface is effectively passivated. Combining these two methods stabilizes the core source of conductive holes in the nickel oxide film—intrinsic point defects—and fundamentally suppresses the degradation of its electrical properties. This technology provides an effective way to solve the problem of poor electrical stability of nickel oxide films and has the significant advantages of low equipment requirements and simple process operation, possessing good practical application value.

The present application relates to films for applying compressive stress to ceramic materials. The invention relates to a method for providing compressive stress to a substrate comprising depositing a film on a ceramic substrate at a deposition temperature (T d ) to form an article, the difference in coefficient of thermal expansion (CTE) of the film relative to the CTE of the ceramic substrate at T d is at least 1.0 x 10 ‑6 / K and the difference in refractive index is > 0.10. At least a portion of the thickness of the film is converted in at least one of composition, phase, and microstructure by reducing or increasing the temperature from T d to a modified temperature (T d ) that differs from T c by at least 100 °C. The film conversion conditions produce a converted film portion having a difference between the refractive index of the converted film and the refractive index of the ceramic substrate at T c ≤ |0.10|. The temperature of the article is then reduced to room temperature.

SOLUTION: A substrate; a photovoltaic module comprising a plurality of photovoltaic cells disposed on the substrate; top and bottom electrodes incorporated into the photovoltaic module, the top and bottom electrodes being at least partially exposed; and a protective encapsulant covering at least an active area of the photovoltaic module, the photovoltaic device wherein the protective encapsulant comprises a) at least one vacuum-processed material having a deposition temperature of 1200 °C or less, or b) at least one solution-processed metal oxide selected from molybdenum oxide (MoOx), tungsten trioxide (WO3), vanadium pentoxide (V2O5), zinc oxide (ZnO), nickel oxide (NiOx), and titanium dioxide (TiO2).EFFECT: The protective encapsulant of the present disclosure can eliminate the reaction of the photovoltaic layer with air, and thus can improve the lifetime of the photovoltaic module.SELECTED DRAWING: Figure 1

The application discloses a zinc metal negative electrode with a textured zinc sulfide solid electrolyte interface layer and a preparation method thereof, and belongs to the technical field of zinc ion batteries. The negative electrode is composed of a cold-rolled zinc base and a zinc sulfide solid electrolyte interface layer. The zinc sulfide target material is bombarded by a high-energy laser beam to cause plasma state transformation and deposition on the cold-rolled zinc base. By controlling the deposition temperature and time, cavity gas pressure, laser frequency and power, a zinc sulfide solid electrolyte interface layer with a (111) texture strength higher than 2.5 and a layer thickness of 0.3-2.0 microns can be prepared, and a zinc metal negative electrode with the interface layer is obtained. In the aqueous zinc ion battery system, the negative electrode material exhibits a cycle service life of not less than 3400 times at a current density of 5 mA / cm 2 2, and a coulomb efficiency of 99.9%. The application is used for improving the cycle service life of zinc ion batteries, and has the advantages of simple and controllable process, high product stability and durability, non-toxic process, and greatly improved service life and reliability of commercial zinc ion batteries.

The invention relates to a semiconductor device and a manufacturing method thereof. In the manufacturing method, gate grooves with different cross section areas are formed, a first metal layer with a lower deposition temperature is formed in a first gate groove with a smaller cross section area, a first metal layer is firstly formed in a second gate groove with a larger cross section area, and then a second metal layer with a higher deposition temperature is formed. The compactness of the second metal layer is higher, and the load effect of the second gate groove region can be inhibited during the planarization process, so that the height consistency of the upper surface of the first metal gate formed in the first gate groove and the upper surface of the second metal gate formed in the second gate groove is good. While ensuring no short circuit between the metal gates, the upper surfaces of part of the metal gates are prevented from being too low, and the process window of the planarization process is expanded. The semiconductor device can be formed by adopting the manufacturing method, and has similar advantages.

Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.

The invention relates to a preparation method, a regulation method and application of a Ni / NiO resistive device, a NiO film is deposited on a Pt / SiO2 / Si substrate by using a pulse laser deposition system, and the back bottom vacuum of a chamber before deposition is lower than 5.0 * 10 <-6 > Pa; in the deposition process, the oxygen pressure is kept at 10 Pa, the substrate temperature is kept at 550 DEG C, and the sputtering time is 50 min; after deposition is completed, the film is subjected to in-situ annealing for 30 min at 550 DEG C and then cooled to the room temperature step by step, and then a NiO film sample is taken out; depositing a circular Ni metal top electrode with the diameter of 100 microns on the NiO thin film through a mask by using the same pulse laser deposition system; the vacuum of the substrate is kept below 5.0 * 10 <-6 > Pa, and the deposition temperature is room temperature; in the deposition process, the air pressure of the cavity is 10 <-3 > Pa, the deposition time is 10 min, and the Ni / NiO resistive random access device is prepared; the HER and OER performance of the resistive device after electric field regulation and control are obviously higher than the performance of a device which is not regulated and controlled by the electric field, and especially the HER performance regulated and controlled by the electric field is higher than that of most NiO-based catalytic materials.

The invention discloses a vacuum wide-temperature-range self-lubricating composite film as well as a preparation method and application thereof. The vacuum wide-temperature-range self-lubricating composite film comprises a Cr layer, a Cr-Si-C gradient transition layer and a Mo-S-C-Si layer which are sequentially laminated and compounded, the Cr-Si-C gradient transition layer is arranged in the direction from the position close to the Cr layer to the position away from the Cr layer, the atomic percent of Cr is decreased from 99.5% to 0, the atomic percent of Si is increased from 0 to 4%, and the Mo-S-C-Si layer comprises the following components in atomic percent: 16%-20% of Mo, 5%-10% of Si and the balance of Fe. 26%-32% of S; 2%-4% of Si; and C: the balance. The vacuum wide-temperature-range self-lubricating composite film has the vacuum wide-temperature-range self-lubricating performance and the strong interface bonding performance, and the preparation method of the vacuum wide-temperature-range self-lubricating composite film has the advantages of being low in deposition temperature, high in material utilization rate, good in process repeatability, good in uniformity of the prepared film and the like, and is suitable for being applied to space moving parts on a large scale.

A manufacturing method of a display device includes forming a light emitting element layer on a substrate, co-depositing bismuth (Bi) and ytterbium (Yb) on the light emitting element layer to form a first inorganic absorbing layer, and forming a reflection control layer on the first inorganic absorbing layer. In the co-depositing, a deposition temperature of bismuth (Bi) is in a range of about 500° C. to about 850° C., a deposition temperature of ytterbium (Yb) is in a range of about 300° C. to about 550° C., and an extinction coefficient of the first inorganic absorbing layer is less than or equal to about 3.

The application relates to the technical field of film layers, in particular to an ALD stacked gradient film layer and a passivation process thereof, a to-be-deposited silicon wafer is loaded, put into a boat, vacuumized, preheated at a temperature of 230-250 DEG C, pretreated for a specified time; a reaction cavity is water pretreated; gaseous precursors TMA and H2O are alternately pulsed into the reaction cavity to perform cyclic deposition; the cavity is excessively purged to remove impurities and by-products; the cavity is purged and cooled after deposition; the silicon wafer is discharged and the vacuum cavity is broken; the ALD system upgrading scheme has strong compatibility and can be directly adapted to the existing TOPCon production line transformation; through accurate regulation and control of the TMA / water flow ratio, deposition temperature and pulse time of each layer, the technical pain points that the film layer uniformity is poor, the adhesion is insufficient, the passivation effect and the conductive performance are difficult to be considered in the traditional single film layer ALD process are solved; the passivation quality of the emitter is significantly improved, the interface recombination rate is reduced, the battery conversion efficiency is improved, meanwhile, the film layer uniformity and the process stability meet the mass production requirements.

The invention relates to the technical field of battery negative electrode materials, in particular to a CVD silicon-carbon composite material and a preparation method and application thereof. The problems that the battery assembled by using the carbon-silicon composite material as the negative electrode material is poor in cycling stability and the negative electrode plate is high in expansion rate are solved. Phenolic resin is used under the action of a dispersing agent and a curing agent, and the silicon-carbon composite material is prepared through stepped heating curing, carbonization treatment, activation impurity removal, nanometer silicon deposition through a chemical vapor deposition method and carbon material coating. By changing the raw material ratio of the phenolic resin, the specific capacity of a battery assembled by the composite material is improved; the multiplying power retention rate of the battery is improved by adjusting the types of the dispersing agent and the curing agent and controlling the carbonization temperature; the cycling stability of the battery is improved by adjusting the specific surface area of the high-micropore porous carbon; the ion conductivity of the battery is improved by adjusting the silicon deposition temperature, the gas flow and the volume ratio; the expansion rate of the battery negative pole piece is reduced by controlling the thickness of the carbon coating layer and the deposition temperature.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

A method for forming a metal-containing film comprises: a) exposing a substrate to a vapor of a metal-containing film-forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the metal- containing film is deposited on the substrate using an ALD process. The metal- containing film-forming composition comprises a metal chloride precursor M(R1R2R3R4R5Cp)xCly, preferably selected from Hf(sPentylCp)Cl3 or Zr(sPentylCp)Cl3. A deposition temperature is preferably higher than 400°C.

The present invention discloses the manufacturing method for the semiconductor device comprising a first thin film deposition step of supplying a first source gas at a first deposition temperature to deposit the first thin film to the top surface of the flat substrate, a deposition temperature-lowering step of lowering a temperature of the flat substrate from the first deposition temperature to a second deposition temperature, a second thin film deposition step of supplying a second source gas at the second deposition temperature to deposit the second thin film to a top surface of the first thin film, and a deposition temperature-rising step of rising the temperature of the flat substrate from the second deposition temperature to the first deposition temperature, and discloses a semiconductor device manufacturing apparatus for the above method.