225 results about "Deposition temperature" patented technology

The invention discloses a metal surface quality detection method and system, and relates to the technical field of metal surface quality detection. The method is used for solving the problems of low microdefect detection precision, weak technological parameter relevance and closed-loop control deficiency of the high-reflection surface. The metal surface is irradiated through multi-angle coherent light field serialization, the phase offset of interference fringes is analyzed to generate three-dimensional shape data, and reflection noise interference is restrained. Defect depth gradient is extracted based on dynamic segmentation of process parameter constraint, deposition temperature and pressure deviation are quantified through deconvolution calculation, and process deviation feature distribution is constructed. Finite element simulation is utilized to generate a process-morphology mapping atlas library, cross-domain invariance features are extracted through depth constraint manifold alignment and comparative learning, and a causal correlation model of defect types and process parameters is established. And dynamically adjusting process parameters according to the weight gradient, and reflowing data to update the manifold rule. And high-precision three-dimensional defect detection, process deviation traceability and adaptive parameter optimization are realized.

The invention relates to an electrode preparation method, an electrode prepared by the method, an energy storage device comprising the electrode and an electrode production system for carrying out the method. The preparation method comprises the following steps: (a) providing a self-supporting electrode film which comprises a first side and a second side opposite to the first side, and the second side comprises a to-be-deposited area on which metal is deposited when the self-supporting electrode film is in contact with an electrolyte for an electrodeposition reaction; (b) providing an electrolyte containing a salt of a metal to be deposited; and (c) contacting at least the region to be deposited of the second side of the self-supporting electrode film with the electrolyte, and performing an electrodeposition reaction in the region to be deposited, thereby depositing a current collector of the metal to be deposited on the second side, where the electrodeposition temperature is 0 to 70 DEG C. According to the electrode prepared by the method disclosed by the invention, the active substance in the electrode has excellent first discharge specific capacity, first coulombic efficiency and cycle performance.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention belongs to the technical field of semiconductors, and relates to a silicon nitride film, a preparation method thereof and a semiconductor device. The preparation method of the silicon nitride film comprises the following steps: (1) introducing precursor gas into a cavity which is vacuumized, and preheating a wafer to a deposition temperature at the same time; (2) depositing a silicon nitride film on the surface of the wafer; (3) vacuumizing the cavity, introducing nitrogen, and performing plasma treatment on the silicon nitride film; and (4) vacuumizing the cavity, and cooling to finish the preparation. After the nitrogen is introduced in the step (3), the pressure in the cavity is 2.0 torr to 3.0 torr; the power of the plasma treatment is 450 W to 550 W. According to the invention, the silicon nitride film obtained by deposition is subjected to plasma treatment, and the plasma treatment process is optimized, so that the silicon nitride film with good uniformity and low roughness is prepared.

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

The invention relates to a silicon-carbon negative electrode material and a preparation method thereof. The silicon-carbon negative electrode material comprises a carbon skeleton, silicon particles distributed in pores of the carbon skeleton and a carbon layer coating the carbon skeleton, wherein the carbon skeleton adopts porous carbon, and the carbon layer is of a double-layer gradient coating structure. According to the silicon-carbon negative electrode material and the preparation method thereof, by controlling the deposition mode, deposition temperature, deposition time and the like of the silicon source gas and the coating mode, coating flow, coating time and the like of the coating gas, uniform deposition of silicon particles in pores of a carbon skeleton and uniform coating of a gradient coating type carbon layer are realized; the growth of silicon grains and the formation of rich silicon on the surface are inhibited, the gas production of the material is reduced, the tap density of the material is improved, the tar residue in the material is eliminated, and the comprehensive electrochemical performance is considered.

The present invention belongs to the technical field of ceramic preparation, and relates to a preparation method and device for a high-purity porous boron carbide nuclear control rod. The present invention uses boron trichloride gas as the boron source, methane as the carbon source, argon as the carrier gas and protective gas, and hydrogen as the catalytic gas and reducing gas to prepare a high-purity porous boron carbide nuclear control rod. The method of increasing the deposition temperature of boron carbide step by step and region by region from the back to the front is adopted, which can not only improve the deposition rate of boron carbide, but also ensure that the physical and mechanical properties of each part of the prepared high-purity porous boron carbide nuclear control rod are consistent. By changing the particle size of the boron carbide powder for preparing the boron carbide blank and coordinating the adjustment of temperature, flow rate, pressure and deposition time, the porosity and pore size of the prepared high-purity porous boron carbide can be regulated and a high total boron and carbon content can be obtained, so as to meet various actual requirements.

The invention provides a preparation method of a doped polycrystalline silicon layer and a preparation method and application of a TBC battery, and relates to the technical field of solar cells, and the preparation method comprises the following steps: depositing the doped polycrystalline silicon layer on a tunneling oxide layer, and then annealing; wherein deposition of the doped polycrystalline silicon layer and annealing serve as one procedure, the process of preparing the doped polycrystalline silicon layer comprises at least two procedures, the annealing temperature in each procedure is lower than the deposition temperature, and the deposition temperatures in the adjacent procedures are decreased progressively. And the cell conversion efficiency is improved.

A fabrication method for a back-contact battery with a continuous back film deposition, comprising: forming in sequence a second semiconductor layer and a sacrificial isolation layer on the back surface of a silicon wafer obtained in S01, the second semiconductor layer comprising an intrinsic hydrogenated amorphous silicon layer and a second doped silicon layer; wherein the second semiconductor layer and the sacrificial isolation layer are deposited and formed in a deposition system using a plate-type CVD continuous deposition method; the deposition temperature of the second doped silicon layer and the deposition temperature of the isolation sacrificial layer being independently controlled at 150-200℃, and the sum of the deposition duration of the second doped silicon layer and the deposition duration of the sacrificial isolation layer being controlled at 1-4 minutes; and performing single-side cleaning to remove the sacrificial isolation layer and a wrap-around deposition layer on the back surface obtained in S7. Enabling the common utilization of a single deposition system greatly reduces equipment costs and simplifies processes. This effectively prevents contamination during continuous deposition, while maintaining optimal battery performance, and particularly superior passivation performance, fill factor, and battery conversion efficiency.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention provides a YBCO (Yttrium Barium Copper Oxide) film for a single-photon detector and a deposition method thereof, and the deposition method comprises the following steps: S1, fixing a substrate on a substrate table of pulse laser deposition equipment, vacuumizing, and heating the substrate table to a deposition temperature; s2, oxygen is introduced into the deposition cavity until the oxygen pressure ranges from 0.25 Torr to 0.35 Torr; s3, adopting a YBCO target material, and carrying out pre-sputtering in a baffle closing state; s4, a baffle is opened, sputtering is conducted on the YBCO target material, and a YBCO film precursor is obtained; s5, oxygen is introduced into the deposition cavity, and meanwhile, the annealing temperature is reduced for in-situ annealing treatment; and S6, cooling to room temperature to obtain the YBCO film. According to the method, the high-quality ultrathin YBCO film with the thickness as low as 14 nm is prepared by accurately controlling the deposition parameters and the annealing process of the oxygen atmosphere, the prepared YBCO film still keeps excellent superconducting performance under the ultrathin condition, and the refrigeration cost is greatly reduced.

The invention relates to the technical field of surface coating preparation, and discloses a texture-based composite coating and a preparation method thereof.The method comprises the following steps that a TiN layer, an MT-TiCN layer, a bonding layer, a modified layer and an outermost TiN layer are sequentially deposited on the surface of a base body through a hot wall type chemical vapor deposition technology, the deposition process meets the following conditions: the deposition temperature is in a range of 900-1050 DEG C, and is gradually reduced in the deposition process; the deposition pressure is 50 to 200 mbar; the introduced mixed gas contains CO and the volume ratio of CO to CO is controlled to be 0.5-3; the volume ratio of the mixed gas is not higher than 92% and not lower than 80%; the modified layer comprises an Al purging modified layer and an oxidation modified layer and is used for controlling the texture and the grain size. According to the method, the particle size can be considered while the strong (006) texture coating is obtained, the particle size of the coating is smaller than or equal to 1 micron, and the excellent comprehensive performance is achieved.

The invention provides a silicon-carbon negative electrode material utilizing atomic layer deposition and a preparation method thereof, and the method adopts an atomic layer deposition method to deposit a silicon negative electrode active layer on a carbon carrier to prepare the silicon-carbon negative electrode material. The deposition temperature of the atomic layer deposition silicon negative electrode active layer is less than or equal to 400 DEG C. The carbon carrier is graphite, carbon black, activated carbon, mesoporous carbon, carbon nanotubes, graphene, graphdiyne or carbon aerogel. The precursor of the atomic layer deposition silicon negative electrode active layer is silane and halogenated silane. Silane and halogenated silane are used as precursors, atomic-scale precise construction of a silicon-carbon negative electrode is realized through an ALD process, and the silicon-carbon negative electrode material not only can effectively relieve volume expansion of the silicon negative electrode material, but also can shorten the transportation distance of lithium ions and improve the cycle performance of the battery.

The invention relates to a vapor deposition real-time deposition rate regulation and control method and system and a preparation method and equipment of a silicon carbide coating. The regulation and control method comprises the following steps that (1) the current mass deposition rate in the vapor deposition treatment process is obtained; (2) comparing the current mass deposition rate with a target mass deposition rate to obtain a deposition rate comparison result; (3) if the deposition rate comparison result is that the difference value between the current mass deposition rate and the target mass deposition rate is not within the preset range, at least one parameter of the real-time deposition temperature, the real-time deposition pressure and the real-time mass flow rate of the gas source in the vapor deposition treatment process is corrected; (4) after the step (3), repeating the steps (1)-(3) for n times until the deposition rate comparison result is within a preset value; n is an integer. According to the method, the deposition thickness of the coating in unit time can be more accurately controlled, so that the uniformity of the thickness of the coating and the quality of the coating are improved.

The present application relates to the field of electronic components and electronic special materials manufacturing, and in particular to a method for preparing a silicon carbide epitaxial wafer for chips using an alkylsilane. When an alkylsilane precursor is used for CVD deposition of SiC, a decomposition temperature is moderate, decomposition products are simple, deposition efficiency is high, use safety is high, there is no spontaneous combustion in air, and storage stability is good. Using an alkylsilane precursor can form stable single crystal SiC crystals and thin films at 100°C-200°C lower than conventional materials, and has high crystal growth and film formation efficiency with few defects, making a good semi-insulating SiC raw material. In addition, as an SiC precursor for CVD / CVI, an alkylsilane precursor is a non-corrosive, single-source silicon-carbon compound having the lowest molecular weight. Due to the high SiC content in precursor molecules, the deposition rate is faster and the deposition temperature is lower, and nearly stoichiometric SiC can be obtained. It is the optimal solution for growing SiC crystals in high-temperature chemical vapor deposition processes.

The invention discloses an interpenetrating network structure tantalum carbide composite coating as well as a preparation method and application thereof, and relates to the technical field of graphite materials. Comprising the following steps: 1, preparing a carbide coating with an interpenetrating network structure on a graphite substrate; 2, cleaning and drying the carbide coating with the interpenetrating network structure, mixing inorganic tantalum salt, alkane and hydrogen according to the molar ratio of (2-5): (2-5): (1-2) in an inert atmosphere by taking argon as carrier gas, and then carrying out CVD (Chemical Vapor Deposition) under the conditions that the pressure of the mixed gas is 5-100 mbar, the deposition temperature is 1000-1800 DEG C and the deposition time is 6-10 hours to obtain the interpenetrating network structure carbide coating. The yield of the TaC coating is improved, the binding force of the coating and a substrate material is improved, and cracking of the coating is reduced.

The invention discloses a method for depositing a TiAlSiN nano composite hard film through high-power pulse magnetron sputtering. An advanced combination technology of an arc enhanced glow discharge technology and a high-power pulse magnetron sputtering technology is adopted, and the TiAlSiN thin film which is well combined with a base body and is high in hardness, good in toughness and high in abrasion resistance is obtained. The method comprises the following steps: firstly, carrying out ion cleaning and etching on the surface of a workpiece matrix by utilizing argon ions generated by arc enhanced glow discharge, then optimizing key process parameters by adopting a high-power pulse magnetron sputtering technology under constant deposition temperature, gas pressure and reaction gas proportion, and depositing a TiAlSiN hard film on the surface of a hard alloy, stainless steel or high-speed steel, so as to obtain the TiAlSiN hard film on the surface of the hard alloy, stainless steel or high-speed steel. The thickness and the density of the film are easy to control, meanwhile, the binding force and the coating uniformity of the TiAlSiN film are remarkably improved, and excellent wear resistance and corrosion resistance are obtained. The method is easy to operate, high in repeatability, wide in applicability and wide in application prospect in the field of surface strengthening of advanced cutting tools and precision forming dies.

Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and / or reduce a nucleation temperature and / or deposition temperature of a step of forming the molybdenum layer.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

The invention provides fiber core glass as well as a preparation method and application thereof. The fiber core glass comprises the following components in percentage by mole: 31-43% of SiO2, 3-5% of Al2O3, 14-20% of B2O3 and 6-10% of CaO; the ceramic is prepared from the following components in percentage by weight: 2 to 4 percent of ZnO, 3 to 7 percent of BaO, 5 to 7 percent of Bi2O3, 2 to 4 percent of Li2O, 1 to 3 percent of Y2O3, 5 to 8 percent of TiO2, 7 to 10 percent of ZrO2, 3 to 5 percent of P2O5, 3 to 5 percent of Ta2O5, 2 to 4 percent of Nb2O5 and 1 to 3 percent of PbO. The technical problem to be solved is how to prepare the fiber core glass and use the fiber core glass for preparing the glass with the gradient refractive index, so that the fiber core glass has more advantages compared with existing MCVD and other vapor deposition processes, complex gas flow and deposition temperature real-time regulation and control are not needed, and the glass with the gradient refractive index can be prepared only through fiber core glass component design, high-temperature ion diffusion, multi-stage wire drawing and other processes. The continuous and smooth gradient refractive index structure can be formed by using the method, the process is simpler, the preparation period is shorter, and the process uniformity is easier to control; and the prepared glass with the gradient refractive index can reduce optical loss and crosstalk, improve the imaging resolution, can be stably made into devices such as an optical fiber panel and the like, and meets the requirements of multiple fields, so that the glass is more suitable and practical.

A method for manufacturing a TOPCon cell includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150° C. to 200° C., the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

The invention discloses physical vapor deposition equipment, an electrochromic device and a preparation method of the electrochromic device, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing the WO3 electrochromic layer on the surface of the first ITO layer, wherein the oxygen content is any one of 42.5-52.5%; sputtering and depositing a tungsten oxide ion conducting layer with a preset thickness on the electrochromic layer, wherein the oxygen content of the corresponding chamber is any one of 35%-45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; a second ITO layer is deposited on the ion storage layer, and the electrochromic device is prepared after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any one value from 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any one value from 450 DEG C to 500 DEG C. The electrochromic device prepared by the invention has the characteristics of high transmittance and low sheet resistance.

This invention relates to an all-solid-state sodium-ion battery and its preparation method. The battery includes a sodium metal anode, a solid electrolyte, and a cathode. The sodium metal anode is deposited onto a metal foil via physical vapor deposition, and a sodium layer with a thickness of 0.5 μm to 10 μm is formed on the metal foil surface by controlling at least one of the deposition time, deposition temperature, or voltage. The solid electrolyte is prepared by mixing a polymer, sodium salt, binder, and water, casting the resulting mixture onto a substrate, and then vacuum drying it. The cathode is an active material containing sodium ions. The all-solid-state sodium-ion battery preparation method provided by this invention is easy to industrialize. The prepared all-solid-state sodium-ion battery exhibits excellent cycle performance, energy density, and power density, and its safety is improved, showing promising market application prospects.

The present invention belongs to the field of two-dimensional material preparation, and specifically relates to a method for preparing WS2-WSe2 lateral heterojunctions with different numbers of layers, wherein WSe2 powder is heat-treated at a temperature of 1150-1200°C; using the heat-treated WSe2 as the source material and the WS2 nanosheet as the substrate, a gas-variable deposition method is used to heat the source material to a volatilization temperature under a reverse carrier gas, and then change to a forward carrier gas, and the volatilized source material is laterally deposited on the edge of the WS2 nanosheet, and then the deposited product is quenched from the deposition temperature to room temperature to obtain the WS2-WSe2 lateral heterojunction; the direction of the reverse carrier gas refers to the direction from the substrate to the source material; the volatilization temperature is less than the heat treatment temperature, and the temperature difference is 10-25°C; the temperature of the lateral deposition is 800-950°C. In the present invention, through the combined control of the means and parameters, WSe2 can be synergistically induced to grow laterally at the edge of WS2, successfully preparing the lateral heterojunction, improving the boundary and smoothness, and realizing artificial control of the thickness of the lateral heterojunction nanosheet.

The invention provides a passivation method and a preparation method of a solar cell, a photovoltaic module and a photovoltaic system. The passivation method comprises the following steps: depositing a passivation layer on the surface of a P-type doping layer; heating the solar cell to a first preset temperature; depositing an antireflection layer on the surface of the passivation layer; after the antireflection layer is formed, the solar cell is heated to a second preset temperature for annealing, and the first preset temperature and the second preset temperature are both higher than the deposition temperature when the antireflection layer is formed. According to the passivation method of the solar cell, part of redundant hydrogen generated in aluminum oxide and silicon nitride is slowly released in advance at the temperature higher than the deposition temperature between and after the deposition of the antireflection layer, and generation of poor film explosion is avoided. Meanwhile, the compactness of the thin film layer is increased to a certain extent, a good protection barrier is formed for hydrogen passivation, UV attenuation is improved, and UV60 attenuation is reduced to 0.64% from 0.94% in the past.

The invention discloses a SiC-coated C nano whisker material as well as a preparation method and application thereof. The preparation method of the SiC-at-C nano whisker material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introducing the precursor and the carrier gas, stopping laser, then stopping introducing H2, vacuumizing the reaction chamber to be below 20Pa, and after the substrate material is cooled to room temperature, taking out the substrate material. The SiC-coated C nano whisker material prepared by the method has excellent electromagnetic shielding performance and flexibility, is simple in process, short in period and easy to scale, and has a wide application prospect in the field of electromagnetic shielding equipment.

The present invention belongs to the technical field of ultra-high temperature ceramic materials and discloses a high-purity porous tantalum carbide ceramic, a preparation method thereof, and an application thereof. The present invention comprises the following steps: placing a porous graphite substrate horizontally in a vertical vapor deposition chamber, evacuating the chamber, introducing argon gas, increasing the reaction gas pressure to 10-100 mbar, and heating the graphite substrate to a deposition temperature of the tantalum element; delivering an inorganic tantalum salt and hydrogen into the chamber to deposit the tantalum element in a first region; introducing argon gas into the reaction chamber to increase the reaction gas pressure, increasing the carrier gas flow of the inorganic tantalum salt, and increasing the deposition temperature of the tantalum element to deposit the tantalum element in a second region, and repeating the process to deposit the tantalum element on the porous graphite substrate from the inside out; and after the tantalum element is deposited, heating the high-purity porous graphite substrate to react and obtain tantalum carbide. By adjusting the reaction conditions, the reaction gas flow gradually penetrates the porous material at different depths, and the tantalum is uniformly deposited at different positions.

The present invention belongs to the field of semiconductors, and in particular to a hafnium oxide film and its preparation method and application. The preparation method of the hafnium oxide film comprises the following steps: hafnium tetrachloride and cyclopentadiene are subjected to coordination reaction under the conditions of an organic solvent and an auxiliary agent, and then cyclopentadiene hafnium trichloride is obtained by seed induced crystallization method; dimethylamine is added for substitution reaction, and then cyclopentadiene tris (dimethylamino) hafnium is obtained by vacuum distillation crystallization; cyclopentadiene tris (dimethylamino) hafnium is introduced into the reaction chamber of PE-MOCVD equipment, and metal organic chemical vapor deposition is carried out with plasma gas at a deposition temperature, so that cyclopentadiene tris (dimethylamino) hafnium precursor generates hafnium oxide film on the substrate surface; the auxiliary agent is a strong base weak acid salt. The preparation method provided by the present invention can obtain a hafnium oxide film with high purity, high yield and high dielectric constant.

The invention discloses a preparation method of a composite material, the composite material, an electrode plate and a battery, in the preparation method of the composite material, porous carbon is firstly subjected to first carbon deposition in fluidization equipment and then placed in rotary equipment to be subjected to second carbon deposition, so that the carbon coating efficiency is improved, and meanwhile, the composite material is prepared. By controlling the deposition temperatures of the first carbon deposition and the second carbon deposition to be the same, the carbon source types to be the same and the gas-material ratios to be the same, the coating uniformity and coating sufficiency of the carbon layer are improved, and the prepared composite material has good electrochemical performance, can be applied to preparation of an electrode of a battery and is beneficial to improvement of the performance of the battery.