277 results about "Deposition temperature" patented technology

The invention discloses a metal surface quality detection method and system, and relates to the technical field of metal surface quality detection. The method is used for solving the problems of low microdefect detection precision, weak technological parameter relevance and closed-loop control deficiency of the high-reflection surface. The metal surface is irradiated through multi-angle coherent light field serialization, the phase offset of interference fringes is analyzed to generate three-dimensional shape data, and reflection noise interference is restrained. Defect depth gradient is extracted based on dynamic segmentation of process parameter constraint, deposition temperature and pressure deviation are quantified through deconvolution calculation, and process deviation feature distribution is constructed. Finite element simulation is utilized to generate a process-morphology mapping atlas library, cross-domain invariance features are extracted through depth constraint manifold alignment and comparative learning, and a causal correlation model of defect types and process parameters is established. And dynamically adjusting process parameters according to the weight gradient, and reflowing data to update the manifold rule. And high-precision three-dimensional defect detection, process deviation traceability and adaptive parameter optimization are realized.

The invention relates to an electrode preparation method, an electrode prepared by the method, an energy storage device comprising the electrode and an electrode production system for carrying out the method. The preparation method comprises the following steps: (a) providing a self-supporting electrode film which comprises a first side and a second side opposite to the first side, and the second side comprises a to-be-deposited area on which metal is deposited when the self-supporting electrode film is in contact with an electrolyte for an electrodeposition reaction; (b) providing an electrolyte containing a salt of a metal to be deposited; and (c) contacting at least the region to be deposited of the second side of the self-supporting electrode film with the electrolyte, and performing an electrodeposition reaction in the region to be deposited, thereby depositing a current collector of the metal to be deposited on the second side, where the electrodeposition temperature is 0 to 70 DEG C. According to the electrode prepared by the method disclosed by the invention, the active substance in the electrode has excellent first discharge specific capacity, first coulombic efficiency and cycle performance.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention belongs to the technical field of semiconductors, and relates to a silicon nitride film, a preparation method thereof and a semiconductor device. The preparation method of the silicon nitride film comprises the following steps: (1) introducing precursor gas into a cavity which is vacuumized, and preheating a wafer to a deposition temperature at the same time; (2) depositing a silicon nitride film on the surface of the wafer; (3) vacuumizing the cavity, introducing nitrogen, and performing plasma treatment on the silicon nitride film; and (4) vacuumizing the cavity, and cooling to finish the preparation. After the nitrogen is introduced in the step (3), the pressure in the cavity is 2.0 torr to 3.0 torr; the power of the plasma treatment is 450 W to 550 W. According to the invention, the silicon nitride film obtained by deposition is subjected to plasma treatment, and the plasma treatment process is optimized, so that the silicon nitride film with good uniformity and low roughness is prepared.

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

The invention relates to a silicon-carbon negative electrode material and a preparation method thereof. The silicon-carbon negative electrode material comprises a carbon skeleton, silicon particles distributed in pores of the carbon skeleton and a carbon layer coating the carbon skeleton, wherein the carbon skeleton adopts porous carbon, and the carbon layer is of a double-layer gradient coating structure. According to the silicon-carbon negative electrode material and the preparation method thereof, by controlling the deposition mode, deposition temperature, deposition time and the like of the silicon source gas and the coating mode, coating flow, coating time and the like of the coating gas, uniform deposition of silicon particles in pores of a carbon skeleton and uniform coating of a gradient coating type carbon layer are realized; the growth of silicon grains and the formation of rich silicon on the surface are inhibited, the gas production of the material is reduced, the tap density of the material is improved, the tar residue in the material is eliminated, and the comprehensive electrochemical performance is considered.

The invention provides a preparation method for preparing a diamond-like carbon protective film on the surface of glass, the diamond-like carbon protective film and the glass.The preparation method for preparing the diamond-like carbon protective film on the surface of the glass comprises the steps that mixed gas of silane, acetylene and argon with the flow ratio being 10: 5: 1-20: 10: 1 is introduced into a reaction chamber; the pressure intensity in the reaction chamber is adjusted to 0.1-10 Pa; the power of a pulse ionization power supply is set to be 100-2000 W; the plasma auxiliary voltage is set to be 10-1000 V; and depositing the diamond-like carbon protective film with Si-H functional groups on the surface of the glass under the conditions that the deposition temperature is 50-200 DEG C and the deposition time is 10-120 minutes. By applying the technical scheme provided by the invention, the problems of poor hydrophobicity and light transmission of glass in the prior art can be effectively solved.

The present invention belongs to the technical field of ceramic preparation, and relates to a preparation method and device for a high-purity porous boron carbide nuclear control rod. The present invention uses boron trichloride gas as the boron source, methane as the carbon source, argon as the carrier gas and protective gas, and hydrogen as the catalytic gas and reducing gas to prepare a high-purity porous boron carbide nuclear control rod. The method of increasing the deposition temperature of boron carbide step by step and region by region from the back to the front is adopted, which can not only improve the deposition rate of boron carbide, but also ensure that the physical and mechanical properties of each part of the prepared high-purity porous boron carbide nuclear control rod are consistent. By changing the particle size of the boron carbide powder for preparing the boron carbide blank and coordinating the adjustment of temperature, flow rate, pressure and deposition time, the porosity and pore size of the prepared high-purity porous boron carbide can be regulated and a high total boron and carbon content can be obtained, so as to meet various actual requirements.

According to the method for preparing the nanocrystalline nickel foil through the electro-deposition method and the nanocrystalline nickel foil prepared through the method, a nickel plate serves as an anode, a titanium plate serves as a cathode, the anode and the cathode are both placed in electrolyte, and the nanocrystalline nickel foil is prepared on the titanium plate through electro-deposition by adopting a pulse power source; the electrolyte comprises water and the following components by concentration: 300-500g / L of nickel sulfate; 5-15 g / L of nickel chloride; 0.01 to 0.2 g / L of a wetting agent; 20-60 g / L of a buffer agent; 0.05-2 g / L of a brightener; the pH value of the electrolyte is 2-4, and the electro-deposition temperature is 40-60 DEG C; the buffering agent is selected from one or two of citric acid and sodium citrate; and the brightener is selected from one or more of butynediol propoxide, butynediol ethoxylate, sodium sulfopropyne ether, propynol ethoxylate and glycerol monopropyne ether. Based on the method, the problem that in the prior art, the nickel foil prepared through an electro-deposition method is large in fine grain size is solved.

The invention provides a preparation method of a doped polycrystalline silicon layer and a preparation method and application of a TBC battery, and relates to the technical field of solar cells, and the preparation method comprises the following steps: depositing the doped polycrystalline silicon layer on a tunneling oxide layer, and then annealing; wherein deposition of the doped polycrystalline silicon layer and annealing serve as one procedure, the process of preparing the doped polycrystalline silicon layer comprises at least two procedures, the annealing temperature in each procedure is lower than the deposition temperature, and the deposition temperatures in the adjacent procedures are decreased progressively. And the cell conversion efficiency is improved.

A fabrication method for a back-contact battery with a continuous back film deposition, comprising: forming in sequence a second semiconductor layer and a sacrificial isolation layer on the back surface of a silicon wafer obtained in S01, the second semiconductor layer comprising an intrinsic hydrogenated amorphous silicon layer and a second doped silicon layer; wherein the second semiconductor layer and the sacrificial isolation layer are deposited and formed in a deposition system using a plate-type CVD continuous deposition method; the deposition temperature of the second doped silicon layer and the deposition temperature of the isolation sacrificial layer being independently controlled at 150-200℃, and the sum of the deposition duration of the second doped silicon layer and the deposition duration of the sacrificial isolation layer being controlled at 1-4 minutes; and performing single-side cleaning to remove the sacrificial isolation layer and a wrap-around deposition layer on the back surface obtained in S7. Enabling the common utilization of a single deposition system greatly reduces equipment costs and simplifies processes. This effectively prevents contamination during continuous deposition, while maintaining optimal battery performance, and particularly superior passivation performance, fill factor, and battery conversion efficiency.

The invention discloses a polycrystalline composite tantalum carbide coating and a preparation method thereof, comprising the following steps: preparing a porous carbide coating on a clean substrate; cleaning and drying the porous carbide coating, mixing an inorganic tantalum salt, an alkane and hydrogen in a molar ratio of 2-5:2-5:1-2 in an inert atmosphere with argon as a carrier gas, and performing CVI deposition, wherein the pressure of the mixed gas is 5-100 mbar, the deposition temperature is 1000-1800°C, and the deposition time is 10-20 h to obtain the polycrystalline composite tantalum carbide coating.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The embodiment of the invention relates to a carbon-phosphorus composite material as well as a preparation method and application thereof, and the preparation method comprises the following steps: placing porous carbon in a vapor deposition furnace at room temperature, then introducing inert gas into the vapor deposition furnace, and heating the vapor deposition furnace to a deposition temperature; first mixed gas of phosphorane and inert gas is introduced into the vapor deposition furnace, so that the phosphorane is decomposed into phosphorus nano-particles at the deposition temperature, the phosphorus nano-particles are deposited in pores of the porous carbon, and a carbon-phosphorus compound is obtained; the carbon-phosphorus compound is placed in a cladding furnace, then inert gas is introduced into the cladding furnace, and the cladding furnace is heated to the cladding temperature; and second mixed gas of inert gas and carbon source gas is introduced into the coating furnace, so that the carbon source gas performs carbon coating on the carbon-phosphorus compound at the coating temperature, and the carbon-phosphorus composite material is obtained.

The invention provides a heterojunction cell and a preparation method and application thereof, and belongs to the technical field of photovoltaic.The preparation method comprises the steps that first intrinsic amorphous layers are deposited on the surface and the side face of one side of a substrate, and a second intrinsic amorphous layer and an N-type doped microcrystalline silicon layer are sequentially deposited on the surface and the side face of the other side of the substrate; depositing a P-type doped microcrystalline silicon layer on the surface of the first intrinsic amorphous layer and the side surface of the substrate, wherein the P-type doped microcrystalline silicon layer is overlapped with the N-type doped microcrystalline silicon layer on the side surface of the substrate; preparing a back TCO film layer and a front TCO film layer; preparing metal electrodes on the surfaces of the back TCO film layer and the front TCO film layer respectively; the deposition temperature of the P-type doped microcrystalline silicon layer is less than 160 DEG C and greater than or equal to 130 DEG C. Through low-temperature deposition of the P-type doped microcrystalline silicon layer, the problems that the efficiency of the heterojunction cell is reduced and the power of the assembly is reduced after lamination are avoided, so that the efficiency, the thermal stability and the power of the assembly of the heterojunction cell are effectively improved.

The invention provides a YBCO (Yttrium Barium Copper Oxide) film for a single-photon detector and a deposition method thereof, and the deposition method comprises the following steps: S1, fixing a substrate on a substrate table of pulse laser deposition equipment, vacuumizing, and heating the substrate table to a deposition temperature; s2, oxygen is introduced into the deposition cavity until the oxygen pressure ranges from 0.25 Torr to 0.35 Torr; s3, adopting a YBCO target material, and carrying out pre-sputtering in a baffle closing state; s4, a baffle is opened, sputtering is conducted on the YBCO target material, and a YBCO film precursor is obtained; s5, oxygen is introduced into the deposition cavity, and meanwhile, the annealing temperature is reduced for in-situ annealing treatment; and S6, cooling to room temperature to obtain the YBCO film. According to the method, the high-quality ultrathin YBCO film with the thickness as low as 14 nm is prepared by accurately controlling the deposition parameters and the annealing process of the oxygen atmosphere, the prepared YBCO film still keeps excellent superconducting performance under the ultrathin condition, and the refrigeration cost is greatly reduced.

The invention relates to an antimony-doped tin dioxide-vanadium dioxide composite film and a preparation method thereof. The antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention is provided with an amorphous substrate layer, an antimony-doped tin dioxide middle layer and a vanadium dioxide film layer, wherein the antimony-doped tin dioxide middle layer is a SnO2 film doped with Sb2O3. The antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention has an obvious semiconductor-metal conversion effect and a thermochromic effect, and the phase change temperature is reduced. According to the preparation method of the antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention, the antimony-doped tin dioxide film is introduced as a middle buffer layer, and the vanadium dioxide film is grown on the antimony-doped tin dioxide film in situ. As a result, the deposition temperature at the time of growing the vanadium dioxide thin film can be reduced.

The invention provides a method for inhibiting micro discharge of a space traveling wave tube, which comprises the space traveling wave tube and comprises the following steps of: depositing an aluminum oxide film on the surface of a ceramic original sample by adopting an alternating action mode of a plurality of precursors; the ceramic original sample is that no film is deposited on the ceramic surface of the space traveling wave tube. The various precursors are trimethylaluminum and water; the deposition temperature is 250 DEG C to 350 DEG C. According to the method, the secondary electron emission coefficient of the surface of the ceramic original sample is reduced and the flashover voltage along the surface is improved by depositing the aluminum oxide thin film on the surface of the ceramic original sample, so that the probability of micro discharge of the space traveling wave tube is reduced, and the method has a relatively good application prospect in the aspect of solving the micro discharge of the space traveling wave tube; the method has important application value for improving the reliability of the space traveling wave tube in the spacecraft.

The invention belongs to the technical field of ceramic preparation, and relates to a preparation method and device of a high-purity porous boron carbide nuclear control rod. The high-purity porous boron carbide nuclear control rod is prepared by taking boron trichloride gas as a boron source, methane as a carbon source, argon as a carrier gas and a protective gas and hydrogen as a catalytic gas and a reducing gas, and the deposition temperature of boron carbide is increased by adopting a step-by-step and region-divided method from back to front, so that the deposition rate of boron carbide can be increased; the physical and mechanical properties of all parts of the prepared high-purity porous boron carbide nuclear control rod can be ensured to be consistent, the porosity and aperture of the prepared high-purity porous boron carbide can be regulated and controlled by changing the particle size of the boron carbide powder for preparing the boron carbide blank and cooperatively regulating the temperature, flow, pressure and deposition duration, and the high boron-carbon total content can be obtained; therefore, various actual requirements can be met.

The invention relates to the technical field of surface coating preparation, and discloses a texture-based composite coating and a preparation method thereof.The method comprises the following steps that a TiN layer, an MT-TiCN layer, a bonding layer, a modified layer and an outermost TiN layer are sequentially deposited on the surface of a base body through a hot wall type chemical vapor deposition technology, the deposition process meets the following conditions: the deposition temperature is in a range of 900-1050 DEG C, and is gradually reduced in the deposition process; the deposition pressure is 50 to 200 mbar; the introduced mixed gas contains CO and the volume ratio of CO to CO is controlled to be 0.5-3; the volume ratio of the mixed gas is not higher than 92% and not lower than 80%; the modified layer comprises an Al purging modified layer and an oxidation modified layer and is used for controlling the texture and the grain size. According to the method, the particle size can be considered while the strong (006) texture coating is obtained, the particle size of the coating is smaller than or equal to 1 micron, and the excellent comprehensive performance is achieved.

The invention provides a silicon-carbon negative electrode material utilizing atomic layer deposition and a preparation method thereof, and the method adopts an atomic layer deposition method to deposit a silicon negative electrode active layer on a carbon carrier to prepare the silicon-carbon negative electrode material. The deposition temperature of the atomic layer deposition silicon negative electrode active layer is less than or equal to 400 DEG C. The carbon carrier is graphite, carbon black, activated carbon, mesoporous carbon, carbon nanotubes, graphene, graphdiyne or carbon aerogel. The precursor of the atomic layer deposition silicon negative electrode active layer is silane and halogenated silane. Silane and halogenated silane are used as precursors, atomic-scale precise construction of a silicon-carbon negative electrode is realized through an ALD process, and the silicon-carbon negative electrode material not only can effectively relieve volume expansion of the silicon negative electrode material, but also can shorten the transportation distance of lithium ions and improve the cycle performance of the battery.

The invention relates to a vapor deposition real-time deposition rate regulation and control method and system and a preparation method and equipment of a silicon carbide coating. The regulation and control method comprises the following steps that (1) the current mass deposition rate in the vapor deposition treatment process is obtained; (2) comparing the current mass deposition rate with a target mass deposition rate to obtain a deposition rate comparison result; (3) if the deposition rate comparison result is that the difference value between the current mass deposition rate and the target mass deposition rate is not within the preset range, at least one parameter of the real-time deposition temperature, the real-time deposition pressure and the real-time mass flow rate of the gas source in the vapor deposition treatment process is corrected; (4) after the step (3), repeating the steps (1)-(3) for n times until the deposition rate comparison result is within a preset value; n is an integer. According to the method, the deposition thickness of the coating in unit time can be more accurately controlled, so that the uniformity of the thickness of the coating and the quality of the coating are improved.

The present application relates to the field of electronic components and electronic special materials manufacturing, and in particular to a method for preparing a silicon carbide epitaxial wafer for chips using an alkylsilane. When an alkylsilane precursor is used for CVD deposition of SiC, a decomposition temperature is moderate, decomposition products are simple, deposition efficiency is high, use safety is high, there is no spontaneous combustion in air, and storage stability is good. Using an alkylsilane precursor can form stable single crystal SiC crystals and thin films at 100°C-200°C lower than conventional materials, and has high crystal growth and film formation efficiency with few defects, making a good semi-insulating SiC raw material. In addition, as an SiC precursor for CVD / CVI, an alkylsilane precursor is a non-corrosive, single-source silicon-carbon compound having the lowest molecular weight. Due to the high SiC content in precursor molecules, the deposition rate is faster and the deposition temperature is lower, and nearly stoichiometric SiC can be obtained. It is the optimal solution for growing SiC crystals in high-temperature chemical vapor deposition processes.

The invention discloses an interpenetrating network structure tantalum carbide composite coating as well as a preparation method and application thereof, and relates to the technical field of graphite materials. Comprising the following steps: 1, preparing a carbide coating with an interpenetrating network structure on a graphite substrate; 2, cleaning and drying the carbide coating with the interpenetrating network structure, mixing inorganic tantalum salt, alkane and hydrogen according to the molar ratio of (2-5): (2-5): (1-2) in an inert atmosphere by taking argon as carrier gas, and then carrying out CVD (Chemical Vapor Deposition) under the conditions that the pressure of the mixed gas is 5-100 mbar, the deposition temperature is 1000-1800 DEG C and the deposition time is 6-10 hours to obtain the interpenetrating network structure carbide coating. The yield of the TaC coating is improved, the binding force of the coating and a substrate material is improved, and cracking of the coating is reduced.

The invention discloses a preparation method of a silicon-carbon negative electrode material. The preparation method comprises the following steps: drying porous carbon to serve as a matrix; the method comprises the following steps: mixing a porous carbon substrate and a deposition aid, placing the mixture in a reactor together, introducing shielding gas, heating to a deposition temperature, introducing a mixture of silicon source gas and the shielding gas, and depositing silicon into porous carbon; adjusting the temperature of the reactor to a coating temperature, introducing a mixture of carbon source gas 1 and protective gas, carrying out primary carbon coating on the porous carbon, and then introducing a mixture of carbon source gas 1, carbon source gas 2 and protective gas to complete complete carbon coating on the surface of the porous carbon; and separating out the deposition aid to obtain the silicon-carbon negative electrode material. According to the invention, the problem of non-uniform silicon deposition in the process of producing the silicon-carbon negative electrode material by the existing vapor deposition method is solved, the gas-solid mass transfer is enhanced, the deposition and coating temperature is reduced, and the product quality and the production safety are improved.

The invention discloses a method for depositing a TiAlSiN nano composite hard film through high-power pulse magnetron sputtering. An advanced combination technology of an arc enhanced glow discharge technology and a high-power pulse magnetron sputtering technology is adopted, and the TiAlSiN thin film which is well combined with a base body and is high in hardness, good in toughness and high in abrasion resistance is obtained. The method comprises the following steps: firstly, carrying out ion cleaning and etching on the surface of a workpiece matrix by utilizing argon ions generated by arc enhanced glow discharge, then optimizing key process parameters by adopting a high-power pulse magnetron sputtering technology under constant deposition temperature, gas pressure and reaction gas proportion, and depositing a TiAlSiN hard film on the surface of a hard alloy, stainless steel or high-speed steel, so as to obtain the TiAlSiN hard film on the surface of the hard alloy, stainless steel or high-speed steel. The thickness and the density of the film are easy to control, meanwhile, the binding force and the coating uniformity of the TiAlSiN film are remarkably improved, and excellent wear resistance and corrosion resistance are obtained. The method is easy to operate, high in repeatability, wide in applicability and wide in application prospect in the field of surface strengthening of advanced cutting tools and precision forming dies.

Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and / or reduce a nucleation temperature and / or deposition temperature of a step of forming the molybdenum layer.

The invention provides a porous silicon-carbon composite negative electrode material and a preparation method thereof, a negative electrode plate and a lithium ion battery. The invention relates to a preparation method of a porous silicon-carbon composite negative electrode material, which comprises the following steps: depositing silicon and lithium: uniformly mixing a lithium salt and porous carbon, putting the mixture into PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, vacuumizing the PECVD equipment, heating to the deposition temperature of 300-550 DEG C, introducing inert gas and silane gas into the PECVD equipment, and depositing silicon and lithium on the porous carbon under the condition that the power of a radio frequency power supply is 400-600W, a negative electrode material precursor is obtained; wherein the specific surface area of the porous carbon is 1000-2000 m < 2 > / g; and carbon coating: carrying out carbon coating on the negative electrode material precursor to obtain the porous silicon-carbon composite negative electrode material. According to the preparation method, silicon and lithium can be more uniformly deposited into porous carbon through a low-temperature deposition one-step method, and carbon coating is more uniform and compact, so that the obtained porous silicon-carbon composite negative electrode material has higher first efficiency and better cycle performance while having high capacity.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.