5069 results about "Arsenic" patented technology

Structures including a tensile-stressed silicon arsenic layer, devices including the structures, and methods of forming the devices and structures are disclosed. Exemplary tensile-stressed silicon arsenic layer have an arsenic doping level of greater than 5 E+20 arsenic atoms per cubic centimeter. The structures can be used to form metal oxide semiconductor devices.

A method is disclosed to form an upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array.

A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thickness of this second silicon layer nonetheless tends to include unwanted n-type dopant which has diffused up from lower levels. This surface-seeking behavior diminishes when germanium is alloyed with the silicon. In some devices, it may not be advantageous for the second layer to have significant germanium content. In the present invention, a first heavily n-doped semiconductor layer (preferably at least 10 at % germanium) is deposited, followed by a silicon-germanium capping layer with little or no n-type dopant, followed by a layer with little or no n-type dopant and less than 10 at % germanium. The germanium in the first layer and the capping layer minimizes diffusion of n-type dopant into the germanium-poor layer above.

Methods of forming integrated circuit devices include forming a trench in a surface of semiconductor substrate and filling the trench with an electrically insulating region having a seam therein. The trench may be filled by depositing a sufficiently thick electrically insulating layer on sidewalls and a bottom of the trench. Curing ions are then implanted into the electrically insulating region at a sufficient energy and dose to reduce a degree of atomic order therein. The curing ions may be ones selected from a group consisting of nitrogen (N), phosphorus (P), boron (B), arsenic (As), carbon (C), argon (Ar), germanium (Ge), helium (He), neon (Ne) and xenon (Xe). These curing ions may be implanted at an energy of at least about 80 KeV and a dose of at least about 5×10¹⁴ ions/cm². The electrically insulating region is then annealed at a sufficient temperature and for a sufficient duration to increase a degree of atomic order within the electrically insulating region.

The invention discloses ion mineralization stabilizer for treating soil with heavy metal pollution and an application method thereof. The ion mineralization stabilizer comprises, by weight percent, 5-30% of sulfur-based compound, 10-50% of phosphor-based compound, 10-50% of calcium-based compound, and 10-30% of silicon-based compound. The materials are respectively ground into powders with particle size not less than 200 meshes, and the powders are proportionally mixed well. The application method of the ion mineralization stabilizer for treating soil with heavy metal pollution includes: detecting arsenic content and leaching toxicity of the soil to be treated, placing the ion mineralization stabilizers in different proportions on the surface of the soil to be treated according to pollution level, well mixing to form mixed soil by ploughing and stirring, adding water to keep the water content of the mixed soil no less than 25%, covering the mixed soil with moisturizing material, curing for at least 5 days to keep heavy metals in the mixed soil to form stable minerals.

Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

A manufacturing method of a semiconductor device includes the step for forming a silicon nitride film having a first part where arsenic is included and a second part where less amount of or substantially no arsenic is included, the step for removing at least a portion of the first part by dry etching, and the step for removing at least a portion of the second part by wet etching. Since arsenic in the silicon nitride film is removed by dry etching, arsenic is never eluted into the wet etching liquid from the silicon nitride film during subsequent wet etching. Therefore, one can prevent the wet etching from being contaminated. Etching of the silicon nitride film is performed by a combination of dry etching and wet etching. Therefore, compared with the case where etching is performed only by dry etching, plasma damage to the region exposed in the plasma atmosphere except for the silicon nitride film can be decreased.

A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.

To provide a near-IR absorption compound free from antimony or arsenic and excellent in stability, especially, in heat resistance, light fastness, and moisture-and-heat resistance and also an IR absorption filter, an optical information recording medium, and a resin composition excellent in durability by using the near-IR absorption compound.

The near-IR absorption compound is a diimmonium compound having the following structure and the resin composition contains the diimmonium compound:

(wherein R₁ to R₈ independently denote hydrogen atom or an optionally substituted aliphatic hydrocarbon group; R₉ and R₁₀ independently denote an aliphatic hydrocarbon group optionally containing a halogen atom; and rings A and B may further have substituent groups.).

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Apparatus and Method for Optimizing the Efficiency of Germanium Junctions in Multi-Junction Solar Cells. In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers and as a source of n-type dopant for forming the germanium junction, the nucleation layer enables the growth time and temperature in the epilayer device process to be minimized without compromising the integrity of the dual-junction epilayer structure. This in turn allows the arsenic diffusion into the germanium substrate to be optimally controlled by varying the thickness of the nucleation layer. An active germanium junction formed in accordance with the present invention has a typical diffused junction depth that is ⅕ to ½ of that achievable in prior art devices. Furthermore, triple-junction solar cells incorporating a shallow n-p germanium junction of the present invention can attain 1 sun AM0 efficiencies in excess of 26%.

The invention supplies a new type adsorbent--mixed oxide of iron and manganese / diatomite preparation, use and regeneration method, belongs to the treatment of technology. The method used the soluble ferrous permanganate and salt as raw materials, respectively prepared the solutions, after adequate lye into permanganate solution, mixed two salt solutions, by adding diatomite particles, full oscillation, standing aging, neutralize, washing and drying to get the manganese oxide / silicon algae absorbent. The adsorbent is larger than the surface area and good adsorption properties can be used to remove arsenic in water pollutants (especially tervalence arsenic), and the adsorption surface activity of the saturated absorption of pollutants can be directly passed to load manganese oxide compound to regeneration.

A non-aqueous electrolyte for use in an electrochemical cell comprising: (a) at least one organic solvent; (b) at least one electrolytically active salt represented by the formula:in which: M' is selected from a group consisting of magnesium, calcium, aluminum, lithium and sodium; Z is selected from a group consisting of aluminum, boron, phosphorus, antimony and arsenic; R represents radical selected from the following groups: alkyl, alkenyl, aryl, phenyl, benzyl, and amido; X is a halogen (I, Br, Cl, F); m=1-3; and n=0-5 and q=6 in the case of Z=phosphorus, antimony and arsenic, and n=0-3 and q=4 in the case of Z=aluminum and boron. Rechargeable, high energy density electrochemical cells containing an intercalation cathode, a metal anode, and an electrolyte of the above-described type are also disclosed.

The invention discloses a method for precipitating and stabilizing As from As-containing solution. According to the method, ferrous salt is used as As precipitator; through the air oxidation in the As-containing solution in a weak acid condition, Fe<2+> is oxidized into Fe<3+>; and Fe<3+> reacts with As to generate precipitate with high stability and low As leaching toxicity. The method is simple in technology, and generates the precipitate which is ferric arsenate crystalline compound-scorodite crystal FeAsO4. 2H2O under the conditions that the pH value is 4-6, the temperature is 70-95 DEG C, the molar ratio between Fe and As is 1-1.5, the air flow rate is 120-200L/h and the reaction time is 5-7h; the precipitate As has the leaching toxicity concentration of 1-2mg/L which is lower than the limit value of Identification Standards for Hazardous Wastes-Identification for Extraction Toxicity (GB 5085.3-2007); and the harmless stabilizing treatment for the As-containing solution can be realized.

A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.

The invention relates to a method of recycling valuable metals from arsenic-containing soot. The method comprises the following steps: (1) mixing acidic wastewater with white soot, controlling the pH value to 2.5-3.0, performing acid leaching at a temperature of 70-80 DEG C, and filtering to obtain leachate and lead slag; (2) replacing indium for the leachate by using zinc powder, and filtering to obtain indium slag; (3) performing rotational-flow electrodeposition arsenic removal and zinc removal on filtrate in sequence to obtain arsenic slag and zinc slag. The method disclosed by the invention can be used for purifying the acidic wastewater to reach a condition for recycling the acidic wastewater to a smelting acid manufacturing and purifying section, so that the treated acidic wastewater can be directly returned to the acid manufacturing and purifying section, and therefore, the gypsum slag is completely removed to truly achieve the purpose of zero emission. Meanwhile, the method disclosed by the invention can also be used for achieving the treatment of white soot and recycling the valuable metals, so that environmental protection and resource comprehensive utilization are achieved.

A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. One or more kinds of elements selected from Group 15 elements such as nitrogen, phosphorus, and arsenic are added to the second oxide semiconductor regions.