126 results about "Phosphorus doped" patented technology

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The present invention discloses a passivated contact cell with a selective polysilicon layer and a preparation method thereof. In the present invention, each laser scanning line on the back of the TOPCon solar cell is separated by a phosphorus-heavy doped polysilicon layer in the middle, there is no overlap of the laser scanning path, and a partial phosphorus-doped polysilicon layer structure in the area around the main grid is retained. Such a structural method helps to reduce the transmission distance of carriers in the laser ablation area, and the carriers can be collected more quickly by the fine grid, thereby improving the fill factor FF of the cell, especially under special conditions such as broken grid. In the present invention, the laser grooving area is set to 40% to 80% of the total area of ​​the back of the cell, which is conducive to balancing the passivation performance of the cell while reducing the parasitic absorption of light by polysilicon. The passivated contact cell of the present invention has a higher short-circuit current, open-circuit voltage and fill factor.

The invention provides a doped lithium-rich manganese-based precursor, a preparation method thereof, a positive electrode material and a battery, and relates to the technical field of preparation of battery positive electrode materials. Fluorine and phosphorus doped elements are synchronously added in the precursor synthesis process and can be uniformly dispersed in the precursor, the nucleation and growth modes of the precursor are induced by utilizing the adsorption characteristics and the synergistic induction effect of the fluorine and phosphorus elements, and the precursor morphology with needle-shaped radial arrangement is synthesized. The lithium-rich material with the corresponding morphology is beneficial to migration and transmission of lithium ions from the inside to the outside of the material on one hand, meanwhile, the stress is small, and the structure is more stable in the circulation process.

The present invention provides a multi-layer doping source structure, and a high-quality emitter and a controllable preparation method therefor. The multi-layer doping source structure comprises a dielectric layer, a nitrogen silicide layer and a doping source layer, which are stacked on the front surface of a crystalline silicon substrate, wherein the dielectric layer is a silicon oxide film or a silicon oxynitride film, the doping source layer is boron-doped amorphous silicon doped with functional elements or phosphorus-doped amorphous silicon doped with functional elements, and the functional elements doped in the doping source layer are carbon and / or nitrogen. In the present invention, the doping source structure is composed of the dielectric layer, a nitrogen silicide and boron- / phosphorus-doped amorphous silicon doped with functional elements; the multi-layer doping source structure has both a strong laser absorption capability and a high boron or phosphorus doping concentration, thereby facilitating a reduction in the laser power and the illumination time required by a laser selective emitter technique; moreover, such a multi-layer doping source structure is favorable for reducing the surface boron concentration, decreasing defects and improving the passivation effect of an emitter, and therefore an improvement in battery efficiency can be promoted.

A solar cell and a preparation method thereof belong to the field of photovoltaic technology, the solar cell at least comprises a substrate, a tunneling oxide layer, a tin oxide layer and a doped polycrystalline silicon layer, along the thickness direction of the substrate, the tunneling oxide layer is arranged on the surface of the substrate, the tin oxide layer is arranged on the surface of the tunneling oxide layer, and the doped polycrystalline silicon layer is arranged on the surface of the substrate. The doped polycrystalline silicon layer is arranged on the surface of the tin oxide layer, so that the tin oxide layer is located between the tunneling oxide layer and the doped polycrystalline silicon layer. The phosphorus doping concentration alpha of the tunneling oxide layer satisfies 1 * 10 < 13 > cm <-3 > < = alpha < = 1 * 10 < 16 > cm <-3 >, the phosphorus doping concentration beta of the tin oxide layer satisfies 1 * 10 < 15 > cm <-3 > < = beta < = 1 * 10 < 20 > cm <-3 >, and the phosphorus doping concentration gamma of the doped polycrystalline silicon layer satisfies 1 * 10 < 19 > cm <-3 > < = gamma < = 1 * 10 < 21 > cm <-3 >. The tin oxide layer is arranged between the tunneling oxide layer and the doped polycrystalline silicon layer, the tin oxide layer has excellent conductivity and light transmission, parasitic absorption is reduced, more light is absorbed by the substrate, and the photoelectric conversion efficiency of the solar cell is improved.

The invention provides a preparation method of nitrogen and phosphorus-doped carbon dots and application of the nitrogen and phosphorus-doped carbon dots in quercetin detection, the nitrogen and phosphorus-doped fluorescent carbon dots (N, P-CDs) are successfully constructed for the first time by adopting a hydrothermal synthesis method, and the carbon dots have emission peaks at 465 nm under the excitation wavelength of 325 nm and show green fluorescence under the irradiation of an ultraviolet lamp; quinine sulfate is used as a standard reference substance, and the quantum yield is 1301%; an N, P-CDs solution is used as a probe molecule, after quercetin is added, fluorescence quenching of N, P-CDs is induced, and the concentration of quercetin and the fluorescence intensity of N, P-CDs are linearly changed, so that the method can be used for quantitative detection of quercetin. The N, P-CDs preparation method provided by the invention is simple and rapid, the product property is stable and non-toxic, the detection sensitivity on the quercetin is high, and the N, P-CDs can be used for detecting the content of the quercetin in serum.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module. The solar cell includes: a substrate; the first tunneling oxide layer is located on the surface of one side of the substrate; the first phosphorus doped layer is located on the surface of one side, far away from the substrate, of the first tunneling oxide layer; the second tunneling oxide layer is located on the surface of the side, away from the first tunneling oxide layer, of the first phosphorus-doped layer; the second phosphorus-doped layer is located on the surface of one side, far away from the first phosphorus-doped layer, of the second tunneling oxide layer; the third tunneling oxide layer is located on the surface of the side, away from the second tunneling oxide layer, of the second phosphorus-doped layer. The third phosphorus-doped layer is located on the surface of one side, far away from the second phosphorus-doped layer, of the third tunneling oxide layer; wherein the doping concentration of phosphorus in the first phosphorus-doped layer is smaller than the doping concentration of phosphorus in the second phosphorus-doped layer, and the doping concentration of phosphorus in the second phosphorus-doped layer is smaller than the doping concentration of phosphorus in the third phosphorus-doped layer. The solar cell has a good passivation effect.

The invention relates to the technical field of semiconductors, in particular to an epitaxial structure and a preparation method thereof.The epitaxial structure comprises a substrate, a combined buffer layer comprising at least one buffer unit and a drift layer which are sequentially stacked from bottom to top; wherein each buffer unit comprises a nitrogen-doped buffer unit and a phosphorus-doped buffer unit. According to the epitaxial structure provided by the invention, by performing nitrogen and phosphorus doping on the surface of the substrate to form epitaxy of the composite structure buffer layer, the induction probability of stacking fault in the initial epitaxy stage can be reduced, and meanwhile, a large amount of atomic phosphorus is doped in the epitaxy process, and the lattice constant can be expanded, so that the problem that the nitrogen-doped lattice constant is reduced in the mass production process is solved, and the yield of the product is improved. Therefore, the wafer warping is improved, and the yield is improved.

The invention discloses a preparation process of a poly laminated double-passivation structure of a TOPCon battery and the TOPCon battery, and belongs to the technical field of solar cells, the preparation process of the poly laminated double-passivation structure of the TOPCon battery comprises the following steps: S1, a pretreatment process; s2, preparation of a laminated double-passivation structure: feeding the silicon wafer subjected to the pretreatment process into a furnace tube of a PECVD (Plasma Enhanced Chemical Vapor Deposition) machine, preparing a tunneling oxide layer on the back of the silicon wafer, and preparing the laminated double-passivation structure on the tunneling oxide layer, the laminated double-passivation structure sequentially comprising a buffer layer, a barrier layer and an N-type amorphous silicon layer; the buffer layer is an intrinsic amorphous silicon layer, and the barrier layer is a tunneling oxidation barrier layer. According to the poly laminated double-passivation structure, the controllability of phosphorus doping distribution can be improved, the doping uniformity is further improved, the contact performance can be improved through high phosphorus doping concentration, meanwhile, the N / N high-low junction phenomenon caused by too high phosphorus doping concentration is avoided, the passivation contact performance of a battery piece is improved, and high battery conversion efficiency is obtained.

The invention relates to the field of positive electrode materials, in particular to a carbon-coated lithium iron phosphate positive electrode material and a preparation method thereof, which are used for solving the core pain points that the lithium iron phosphate positive electrode material is low in electronic conductivity, slow in ion diffusion and easy to agglomerate particles in circulation. The carbon-coated lithium iron phosphate positive electrode material comprises a phosphorus-doped modified carbon nanotube, N-methyl pyrrolidone and lithium iron phosphate powder, the preparation method comprises the following steps: firstly, modifying a carbon nano tube by using a carbon nano tube modifier, then carrying out phosphorus doping to obtain a phosphorus-doped modified carbon nano tube, and then carrying out carbon coating treatment on lithium iron phosphate by using the phosphorus-doped modified carbon nano tube, the electron and ion transmission efficiency is remarkably improved, the high-rate discharge performance is optimized, the cycle stability is enhanced, and volume expansion and side reaction are inhibited.

The application provides a core-shell type nano zero-valent iron material, a preparation method and application, relates to the fields of environmental pollution remediation and nanometer material technology.The inner core of the material is phosphorus-doped nano zero-valent iron, the shell layer is a mixed layer of iron sulfide and iron oxide, and the particle has nano cracks extending from the core to the shell layer.The phosphorus doping causes lattice expansion and reduces the electron escape energy barrier, promoting the release of bulk phase electrons;the mixed layer of iron sulfide and iron oxide inhibits the hydrogen evolution side reaction and strengthens the electron transfer by virtue of hydrophobicity;the nano cracks continuously expose the internal active sites as mass transfer channels.Three synergies realize the efficient remediation of chlorinated organic matter contaminated groundwater or soil.

The invention discloses a magnetic limited phosphorus-doped photocatalyst as well as a preparation method and application thereof, and belongs to the field of functional materials for pretreatment of environmental chemical pollutants. The preparation method comprises the following steps: preparing magnetic Fe3O4.TiO2 by adopting a microwave method, and introducing a C18 modified carbon framework material and phosphate ions by taking the magnetic Fe3O4.TiO2 as a matrix to prepare the magnetic limited-access phosphorus-doped photocatalyst. The magnetic limited phosphorus-doped photocatalyst disclosed by the invention has the ultrahigh saturated adsorption capacity of a C18 modified carbon framework material, the instantaneous solid-liquid separation capacity and the efficient photocatalytic degradation capacity of nano titanium dioxide modified magnetic ferroferric oxide and the synergistic photocatalytic performance of phosphate; the problem that a traditional photocatalyst is poor in adsorption capacity is fundamentally solved, and the photocatalyst has more advantages in the aspects of adsorption removal and photocatalytic degradation of bisphenol organic pollutants in an environmental water sample.

The application relates to a crystal bar axial resistivity control method and device. The method comprises the following steps: predicting a first antimony evaporation amount of a crystal pulling isodiametric process in an antimony-phosphorus co-doped single crystal furnace according to the correlation between an evaporation constant and a remaining material weight in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio of the isodiametric process according to the first antimony evaporation amount; predicting a second antimony evaporation amount of a crystal pulling ignition process in the antimony-phosphorus co-doped single crystal furnace according to the correlation between the evaporation constant and an ignition duration, and controlling the antimony-phosphorus doping ratio of the ignition process according to the second antimony evaporation amount; predicting a third antimony evaporation amount of a re-injection stage in the antimony-phosphorus co-doped single crystal furnace according to a target re-injection evaporation calculation model, and controlling the antimony-phosphorus doping ratio of the re-injection stage according to the third antimony evaporation amount, so that the axial resistivity uniformity of a straight-pulling obtained crystal bar is located in a target range, and at least the axial doping element uniformity in the single crystal silicon during the crystal pulling process is improved, and the axial resistivity uniformity of the crystal bar is improved.

The invention relates to a transistor with an antimony and phosphorus doped epitaxial source / drain layer. In some embodiments, a device may include a channel material. Additionally, the device may include a contact metal. The device may include a first layer between the channel material and the contact metal, the first layer having antimony and silicon. Further, the device may include a second layer between the contact metal and the first layer, the second layer including phosphorus and silicon.

The invention provides a crystal pulling process control method and device and a crystal pulling system.The method comprises the steps that a transport numerical model of a target object in a single crystal furnace is built, and the target object comprises at least one of oxygen impurities and a phosphorus doping agent, the transport numerical model of the target object is used for reflecting the distribution condition of the target object in the single crystal furnace under different process conditions and magnetic field structures; according to the transport numerical model of the target object, a plurality of characteristic parameters corresponding to the target object under the plurality of process conditions and the plurality of magnetic field structure parameters are generated, and the characteristic parameters are used for representing physical characteristics of the target object; and according to the plurality of characteristic parameters, screening a target process condition and a target magnetic field structure parameter from the plurality of process conditions and the plurality of magnetic field structure parameters so as to control the single crystal furnace to perform a crystal pulling process under the target process condition and the target magnetic field structure parameter, therefore, the problem that the electrical property of the crystal cannot be guaranteed due to a czochralski method silicon single crystal rod growth process in the prior art is solved.

The invention relates to phosphorus-doped polyheptylimide and a preparation method thereof, and belongs to the field of photocatalytic materials. The efficient phosphorus-doped polyheptylimide photocatalyst is synthesized through simple one-pot thermal polymerization, molten alkali metal salt provides an inert liquid environment, the polycondensation process of carbon nitride is improved to synthesize polyheptylimide, and phosphorus doping enables photogenerated electron holes of polyheptylimide to be separated more efficiently; the liquid mass transfer environment provided by the alkali metal salt enables the sample to still maintain high crystallinity of the crystal face of the polyheptylimide (100) when the sample is doped with phosphorus, and the photocatalytic performance is effectively improved. And the generation rate of the phosphorus-doped polyheptylimide hydrogen peroxide is 1.47 times that of the polyheptylimide. The problems of low polymerization degree of carbon nitride, high recombination rate of photo-induced electrons and holes and the like at present are solved. The invention provides a new thought for preparing carbon nitride which is ordered in structure, adjustable in atomic composition and optimized in performance.

The invention belongs to the technical field of carbon materials, and provides a nitrogen-phosphorus-doped porous carbon modifier and a preparation method and application thereof.The preparation method comprises the steps that raw materials and water are mixed, stirred and dried, and a mixture is obtained; wherein the raw materials comprise polyaspartic acid, magnesium sulfate, polyvinylpyrrolidone and melamine phosphate in a mass ratio of (3-7): (4-6): (4-6): (3-7); the mixture is kept at 280-320 DEG C for 8-16 h, and a polymer is obtained; carbonizing the polymer in an inert gas atmosphere for 1.5-3 hours to obtain a nitrogen and phosphorus doped porous carbon modifier; wherein the carbonization temperature is 850-1000 DEG C. According to the preparation method, the nitrogen and phosphorus doped porous carbon is obtained, the porous carbon can be applied to a rubber additive and a battery negative electrode material, rubber can be effectively reinforced and the wear resistance of the rubber can be improved after the porous carbon is applied to the rubber additive, meanwhile, the preparation method is simple, complex steps are avoided, and the cost is reduced.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.

The present invention provides a method and application for preparing nitrogen-phosphorus co-doped MXene negative electrode material. The method comprises the following steps: firstly etching MAX raw material with hydrofluoric acid solution, washing and freeze-drying to obtain MXene material; then mixing the MXene material obtained in step (1), nitrogen source, phosphorus source and solvent to obtain a mixed solution, performing a primary calcination and a secondary calcination after gelation reaction, and cooling to obtain the nitrogen-phosphorus co-doped MXene negative electrode material. The present invention utilizes a simple nitrogen-phosphorus co-doping method to prepare nitrogen-phosphorus doped MXene material with MXene as the substrate, and uses the material in the negative electrode material of lithium-ion batteries to improve the reversible specific capacity of a single material, so that the cycle stability of the material is also improved.

The invention belongs to the technical field of environmental protection, and provides a preparation method and application of phosphorus-doped two-dimensional transition metal carbide porous flexible aerogel. The method comprises the following steps: chemically etching a two-dimensional transition metal carbide precursor through a lithium fluoride-hydrochloric acid system, and carrying out ultrasonic stripping and centrifugal purification to obtain a single-layer nano material suspension; then, triphenylphosphine is adopted for phosphorus doping modification, and the electronic structure is optimized through high-temperature annealing treatment; the preparation method comprises the following steps: impregnating modified melamine sponge with polyvinyl alcohol (PVA) to construct a three-dimensional porous carrier, uniformly loading a phosphorus-doped two-dimensional carbide nano-material on the surface of the carrier, and finally preparing the flexible aerogel material with a hierarchical porous structure through a freeze-drying process. According to the scheme, by doping the phosphorus element, the conductivity of the two-dimensional transition metal carbide is effectively improved, multi-layer accumulation caused by interlayer Van der Waals interaction is reduced, and excellent catalytic activity is shown for removal of antibiotics in industrial wastewater; and compared with traditional persulfate (such as potassium hydrogen persulfate), ciprofloxacin (CIP) in industrial wastewater can be efficiently degraded, and a good treatment effect is achieved.

This invention discloses a modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal and its preparation method, relating to the field of water treatment technology. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal comprises the following components by weight: 100 parts titanium source, 10-25 parts iron source, 1-10 parts phosphorus source, 30-60 parts composite chelating agent, and 0-50 parts functional adjustment precursor. The titanium and iron sources form a primary porous framework, and the phosphorus source is doped and modified on the surface and within the pores of the primary porous framework. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal provided by this invention significantly enhances surface activity through the co-doping of iron and phosphorus elements; and the introduction of the composite chelating agent effectively solves the problem of excessively rapid hydrolysis of the titanium source, enabling the material to form a structurally stable porous framework at a lower temperature, while also exhibiting excellent versatility and scalability.

The application relates to a preparation method of nitrogen and phosphorus doped porous carbon used as an electroactive material in a zinc ion supercapacitor. The method comprises the following steps: (1) preparing a nitrogen and phosphorus dopant; (2) preparing an activator; (3) preparing a carbon material precursor; (4) carbonizing and cleaning the precursor: under a nitrogen atmosphere, the precursor is carbonized at 700 DEG C-900 DEG C for 2 hours, after being reduced to room temperature, the carbonized precursor is washed with water until neutral, and nitrogen and phosphorus doped porous carbon material is obtained. The nitrogen and phosphorus doped porous carbon material prepared in the application has a high specific surface area and a good pore size distribution. The zinc ion supercapacitor prepared by using the nitrogen and phosphorus doped porous carbon material prepared in the application as an electrode active material shows extremely high capacitance and energy density. The application provides a method for solving the problem that the actual capacitance and energy density of the current zinc ion supercapacitor are low.

The invention provides a method for improving phosphorus expansion junction pushing of a TOPCon battery. The method comprises the following steps of phosphorus source deposition, diffusion propulsion and cooling annealing. Wherein in the source phosphorus deposition process, the low-temperature source introduction temperature is 795-805 DEG C; the high-temperature source introduction time is 120 to 160 seconds; and during cooling and annealing, the temperature is 840-870 DEG C. According to the method for improving phosphorus expansion junction pushing of the TOPCon battery, the reaction temperature during source introduction is increased to 795-805 DEG C, the source introduction time is shortened to 780-820 s, and the high-temperature source introduction time is increased to 120-160 s, so that the doping concentration of a phosphorus deep junction is increased; furthermore, in order to avoid the situation that the tunneling oxide layer is expanded and penetrated due to the fact that the junction pushing depth is too large, the reaction temperature of cooling and aerobic propulsion is reduced. By means of the method, the phosphorus doping concentration can be increased to 2.5 E + 20 cm <-3 >-3.7 E + 20 cm <-3 >, the photoelectric conversion efficiency of the battery piece is improved, the efficiency is expected to be improved by 0.03%, and the yield is equal.

A preparation method of nitrogen-phosphorus doped porous carbon for oxygen reduction electrocatalysis within a wide pH range, which uses natural mineral-based carbon sources as raw material and uses a sequential nitrogen and phosphorus doping process for synthesizing in two paths. The method provided may be highly cost-effective, sustainable, and suitable for large-scale utilization.

The invention belongs to the technical field of catalysts, and particularly discloses a P-CoPt3 / P-CoMoO4 heterostructure hydrogen evolution electrocatalyst as well as a preparation method and application thereof. The hydrogen evolution electrocatalyst comprises a foamed nickel substrate and a catalytic active material loaded on the surface of the foamed nickel substrate, the catalytic active material comprises phosphorus-doped CoMoO4 and phosphorus-doped CoPt3, the phosphorus-doped CoMoO4 has a three-dimensional open nanorod array structure, the phosphorus-doped CoPt3 is anchored on the nanorod array, and the phosphorus-doped CoMoO4 has a three-dimensional open nanorod array structure. And the phosphorus doped CoMoO4 and the phosphorus doped CoPt3 form a heterostructure. A simple and controllable solution soaking method is adopted to generate the P-CoPt3 / P-CoMoO4 heterostructure hydrogen evolution electrocatalyst through in-situ spontaneous oxidation-reduction reaction on the nanorod array, and the prepared hydrogen evolution heterostructure electrocatalyst has the characteristics of sensitive response, high activity and long-term stability.

The invention belongs to the technical field of electrode materials, and particularly relates to a nickel phosphide / nitrogen-phosphorus-doped carbon nanosheet composite electrode material and a preparation method and application thereof.The composite electrode material comprises a nitrogen-phosphorus-doped carbon nanosheet and nickel phosphide loaded on the nitrogen-phosphorus-doped carbon nanosheet, the specific surface area of the composite electrode material is 663-1587 cm <-2 > g <-1 >, the aperture size is 1.2-8 nm, the content of C is 94.5-96 at.%, the content of N is 0.4-1.5 at.%, the content of P is 0.1-0.8 at.%, the content of O is 2.5-3.3 at.%, and the content of Ni is 0.1-1 at.%, the composite electrode material can show good stability in the electrochemical process, can maintain high performance for a long time, and prolongs the service life of a supercapacitor.

The present invention provides an NMOS structure, a preparation method and a semiconductor device. The preparation method includes providing a substrate; forming a plurality of fin structures on the substrate; forming a gate oxide layer on the surface of the fin structures, depositing an isolation layer between the fin structures, and forming a gate material layer above the isolation layer and the gate oxide layer of the fin structures; patterning the gate material layer to form a plurality of gate lines, forming a gate spacer trench between adjacent gate lines, and forming a sidewall isolation layer on the surface of the obtained structure; forming an opening area; sequentially forming a nucleation region layer and a high-phosphorus doped region layer inside the opening area, and removing the impurity layer on the surface of the high-phosphorus doped region layer to form a source or a drain. The present invention improves the stress of the NMOS channel, reduces the bulk resistance and contact resistance of the NMOS source-drain region, and improves the product yield.

The present disclosure relates to a carbon-based nanomaterial composition that may be formed from a gas mixture and a phosphorus powder. The gas mixture may include a carbon based gas, an oxygen gas, and a hydrogen gas. The carbon-based nanomaterial composition may include phosphorus doped nanospheres.