37 results about "Phosphorus doped" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention provides a preparation method of nitrogen and phosphorus-doped carbon dots and application of the nitrogen and phosphorus-doped carbon dots in quercetin detection, the nitrogen and phosphorus-doped fluorescent carbon dots (N, P-CDs) are successfully constructed for the first time by adopting a hydrothermal synthesis method, and the carbon dots have emission peaks at 465 nm under the excitation wavelength of 325 nm and show green fluorescence under the irradiation of an ultraviolet lamp; quinine sulfate is used as a standard reference substance, and the quantum yield is 1301%; an N, P-CDs solution is used as a probe molecule, after quercetin is added, fluorescence quenching of N, P-CDs is induced, and the concentration of quercetin and the fluorescence intensity of N, P-CDs are linearly changed, so that the method can be used for quantitative detection of quercetin. The N, P-CDs preparation method provided by the invention is simple and rapid, the product property is stable and non-toxic, the detection sensitivity on the quercetin is high, and the N, P-CDs can be used for detecting the content of the quercetin in serum.

The invention relates to the field of positive electrode materials, in particular to a carbon-coated lithium iron phosphate positive electrode material and a preparation method thereof, which are used for solving the core pain points that the lithium iron phosphate positive electrode material is low in electronic conductivity, slow in ion diffusion and easy to agglomerate particles in circulation. The carbon-coated lithium iron phosphate positive electrode material comprises a phosphorus-doped modified carbon nanotube, N-methyl pyrrolidone and lithium iron phosphate powder, the preparation method comprises the following steps: firstly, modifying a carbon nano tube by using a carbon nano tube modifier, then carrying out phosphorus doping to obtain a phosphorus-doped modified carbon nano tube, and then carrying out carbon coating treatment on lithium iron phosphate by using the phosphorus-doped modified carbon nano tube, the electron and ion transmission efficiency is remarkably improved, the high-rate discharge performance is optimized, the cycle stability is enhanced, and volume expansion and side reaction are inhibited.

The invention discloses a magnetic limited phosphorus-doped photocatalyst as well as a preparation method and application thereof, and belongs to the field of functional materials for pretreatment of environmental chemical pollutants. The preparation method comprises the following steps: preparing magnetic Fe3O4.TiO2 by adopting a microwave method, and introducing a C18 modified carbon framework material and phosphate ions by taking the magnetic Fe3O4.TiO2 as a matrix to prepare the magnetic limited-access phosphorus-doped photocatalyst. The magnetic limited phosphorus-doped photocatalyst disclosed by the invention has the ultrahigh saturated adsorption capacity of a C18 modified carbon framework material, the instantaneous solid-liquid separation capacity and the efficient photocatalytic degradation capacity of nano titanium dioxide modified magnetic ferroferric oxide and the synergistic photocatalytic performance of phosphate; the problem that a traditional photocatalyst is poor in adsorption capacity is fundamentally solved, and the photocatalyst has more advantages in the aspects of adsorption removal and photocatalytic degradation of bisphenol organic pollutants in an environmental water sample.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.

This invention discloses a modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal and its preparation method, relating to the field of water treatment technology. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal comprises the following components by weight: 100 parts titanium source, 10-25 parts iron source, 1-10 parts phosphorus source, 30-60 parts composite chelating agent, and 0-50 parts functional adjustment precursor. The titanium and iron sources form a primary porous framework, and the phosphorus source is doped and modified on the surface and within the pores of the primary porous framework. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal provided by this invention significantly enhances surface activity through the co-doping of iron and phosphorus elements; and the introduction of the composite chelating agent effectively solves the problem of excessively rapid hydrolysis of the titanium source, enabling the material to form a structurally stable porous framework at a lower temperature, while also exhibiting excellent versatility and scalability.

The application relates to a preparation method of nitrogen and phosphorus doped porous carbon used as an electroactive material in a zinc ion supercapacitor. The method comprises the following steps: (1) preparing a nitrogen and phosphorus dopant; (2) preparing an activator; (3) preparing a carbon material precursor; (4) carbonizing and cleaning the precursor: under a nitrogen atmosphere, the precursor is carbonized at 700 DEG C-900 DEG C for 2 hours, after being reduced to room temperature, the carbonized precursor is washed with water until neutral, and nitrogen and phosphorus doped porous carbon material is obtained. The nitrogen and phosphorus doped porous carbon material prepared in the application has a high specific surface area and a good pore size distribution. The zinc ion supercapacitor prepared by using the nitrogen and phosphorus doped porous carbon material prepared in the application as an electrode active material shows extremely high capacitance and energy density. The application provides a method for solving the problem that the actual capacitance and energy density of the current zinc ion supercapacitor are low.

The present disclosure relates to a carbon-based nanomaterial composition that may be formed from a gas mixture and a phosphorus powder. The gas mixture may include a carbon based gas, an oxygen gas, and a hydrogen gas. The carbon-based nanomaterial composition may include phosphorus doped nanospheres.

The invention discloses a diamond Schottky diode with a composite anode structure and a preparation method of the diamond Schottky diode. The Schottky diode comprises an ohmic electrode, a 100-crystal-orientation p-type heavily-doped monocrystal diamond substrate, an unintentionally-doped diamond layer, a phosphorus-doped diamond layer, a high-conductivity layer and a Schottky electrode, the unintentional doped diamond layer is etched into a slope structure, the phosphorus-doped diamond layer is arranged in an etching area, and the high-conductivity layer is arranged on the surface of the phosphorus-doped diamond layer, so that the surface of the high-conductivity layer and the surface of the unintentional doped diamond layer are alternately arranged, and low-barrier Schottky junctions and high-barrier pn junctions which are alternately arranged are introduced into an anode; because the barrier heights of the pn junction and the Schottky junction are different, the low-barrier Schottky junction is used for leading in forward conduction, and the conduction resistance is low; and during reverse turn-off, the high-barrier pn junction is used for leading, and the reverse breakdown voltage is high. According to the preparation method, two times of self-alignment are introduced, unmasked region etching is isolated from phosphorus-doped diamond layer growth and Schottky electrode self-mask etching, and the process complexity is reduced.

The application provides a high-efficiency lithium silicate lithium supplementing agent and a preparation method thereof. By introducing phosphorus doping modification in the carbon material coating, the electronic structure characteristics of phosphorus atoms are utilized to regulate the electron cloud density of the carbon material to reduce the electronic transmission resistance and improve the electronic conduction rate, introduce more defect sites and polar groups, enhance the affinity of the carbon material and the electrolyte, promote the rapid penetration of the electrolyte and the adsorption and desorption of lithium ions, moderately expand the carbon layer spacing to provide a relaxed space for lithium ion migration, and realize the synergistic improvement of electronic transmission and ion migration; small molecule sulfur formed by introducing sulfur and heat activation has higher conductivity and reactivity, and after being embedded in the porous carbon micropore, the charge transfer capacity of the carbon layer and the Li4SiO4 interface is significantly enhanced, the Li4SiO4 wrapped by the carbon layer is effectively activated, and the lithium supplementing capacity is greatly improved; meanwhile, by optimizing the pore structure of the carbon coating layer and the sulfur loading amount, the lithium supplementing agent usage amount is regulated, and efficient, stable and controllable lithium compensation is realized.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

The application discloses a P-type TOPCon cell and a preparation method thereof. The P-type TOPCon cell takes P-type crystalline silicon as a substrate, and the front surface of the P-type TOPCon cell comprises, from inside to outside, a tunneling oxide layer, a phosphorus-doped polysilicon stack and a front composite passivation layer. The phosphorus-doped polysilicon stack comprises, from inside to outside, a first phosphorus-doped polysilicon film, a first silicon oxide film, a second phosphorus-doped polysilicon film, a second silicon oxide film and a third phosphorus-doped polysilicon film. The phosphorus doping concentration and the thickness of the third phosphorus-doped polysilicon film are greater than those of the first phosphorus-doped polysilicon film. The preparation method comprises preparing the tunneling oxide layer, the phosphorus-doped polysilicon stack and the front composite passivation layer on the front surface of the P-type crystalline silicon. The P-type TOPCon cell has the advantages of excellent anti-space radiation capability, high conversion efficiency, long service life and the like. As a novel solar cell with excellent performance, the P-type TOPCon cell can adapt to a harsh space environment and meet the demand of modern spacecraft for high-performance power supplies.

The application provides a preparation method of a bifunctional electrolysis water nitrogen-phosphorus doped high-entropy catalyst, and belongs to the technical field of hydrogen production by electrolysis of water. The method first pretreats a metal substrate, then adsorbs a five-metal precursor solution containing nickel, molybdenum, cobalt, zirconium and iron by immersion, and rapidly constructs a high-entropy oxide structure by using instantaneous Joule heat technology. The core innovation is to use the reducing atmosphere generated by the in-situ decomposition of ammonium hypophosphite and sodium hypophosphite in the Joule heat process to realize the synchronous nitrogen-phosphorus modification of the material surface, which shortens the time-consuming of the traditional process from several hours to seconds and significantly reduces the energy consumption. The finally prepared catalyst has excellent hydrogen evolution (HER) and oxygen evolution (OER) bifunctional activity and chemical stability: the OER overpotential is less than 230 mV, and the HER overpotential is less than 50 mV at a current density of 10 mA·cm ‑2 The electrolysis voltage remains stable in fluctuation electrolysis test, start-stop test and constant current electrolysis, and has excellent stability.

The application belongs to the technical field of solar photovoltaic materials, and particularly discloses a preparation method of phosphorus-doped silicon master alloy. A double-temperature-zone horizontal furnace is used, and zinc phosphide is used as a dopant. A sealed quartz horizontal ampoule is arranged in the double-temperature-zone horizontal furnace. A graphite boat is arranged in the high-temperature section of the quartz horizontal ampoule, and polycrystalline silicon material is arranged in the graphite boat. A quartz crucible is arranged in the low-temperature section, and zinc phosphide is arranged in the quartz crucible. Different temperatures of the high-temperature section and the low-temperature section are set, and the temperature is kept for a period of time, and then the temperature is reduced to obtain the phosphorus-doped silicon master alloy. The speed of synthesizing the phosphorus-doped silicon master alloy is fast, the method is safe and reliable, the requirement for equipment is low, and the manufacturing cost of the phosphorus-doped silicon master alloy is greatly reduced.

This invention discloses a method for preparing a phosphorus-metal alloy co-doped hard carbon composite material. The method involves adding red phosphorus and a crosslinking agent to a solid resin and mixing them uniformly using a ball mill. The mixture is then heated and cured at 300-500℃ to obtain a porous intermediate. This porous intermediate is then mixed uniformly with metal alloy powder and sodium carboxymethyl cellulose, followed by carbonization at 1200-1500℃ for 1-6 hours, and finally pulverized to obtain the phosphorus-metal co-doped hard carbon composite material. This composite material utilizes the porous hard carbon generated during the carbonization of the solid resin, and incorporates a high-specific-capacity metal alloy within its pores to increase specific capacity and reduce expansion. Furthermore, the pore-forming effect of phosphorus doping enhances sodium storage capacity, and the bonding function of sodium carboxymethyl cellulose, along with the formation of inorganic sodium salts after carbonization, improves the initial efficiency of the material. The resulting material exhibits high specific capacity, high initial efficiency, and excellent cycling performance when applied to sodium ions.

The invention discloses a method for inhibiting an epitaxial slip line of a low-resistance red phosphorus doped silicon substrate. The method comprises the following steps: (1) in a wafer-free state, carrying out Etch / Coat pretreatment on an epitaxial cavity, and adjusting the thickness of a deposition layer on the inner wall of the cavity, so that a thermal field of the cavity is uniform; (2) loading the silicon substrate into a cavity, heating in a hydrogen atmosphere, and introducing hydrogen chloride to etch the surface of the substrate; (3) at the initial stage of epitaxial growth, the growth temperature is controlled to be 1070-1080 DEG C, the flow of trichlorosilane is controlled to be within the range of 5-12 SLM, hydrogen serves as carrier gas for dilution, and a transition layer with the thickness of 0.2-1.0 micrometer grows; (4) raising the growth temperature to 1090-1110 DEG C to form a target epitaxial layer; and (5) cooling after epitaxial growth is completed, and controlling the radial temperature gradient of the wafer to be less than or equal to 15 DEG C in the cooling process. The method can significantly reduce the generation probability of slip lines in the epitaxial growth process, and improves the crystal quality of the epitaxial layer.

The invention discloses a method for forming a polycrystalline silicon thin film of a super junction device, which comprises the following steps: a first polycrystalline silicon layer is formed on an oxide layer, gas introduced in the process of forming the first polycrystalline silicon layer comprises silane and phosphorane, the oxide layer is formed on a wafer, and the wafer is used for forming the super junction device; and forming a second polycrystalline silicon layer on the first polycrystalline silicon layer, wherein the introduced gas in the process of forming the second polycrystalline silicon layer comprises silane, and phosphine is not introduced. In the manufacturing process of the super junction device, after the oxide layer is formed on the wafer, the first polycrystalline silicon layer with relatively high phosphorus doping concentration is formed on the oxide layer, and then the second polycrystalline silicon layer with relatively low phosphorus doping concentration is formed on the first polycrystalline silicon layer, so that the polycrystalline silicon thin film with relatively low surface phosphorus concentration and relatively high lower layer phosphorus concentration is formed; and the square resistance is reduced on the premise of keeping the thickness of the polycrystalline silicon thin film.

The application discloses a phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production energy conversion. The catalyst material comprises a molybdenum disulfide matrix with a three-dimensional nanometer network structure, and phosphorus atoms and / or phosphorus ions doped in the molybdenum disulfide matrix. The preparation method comprises the following steps: dissolving a molybdenum source and a sulfur source in deionized water to prepare a precursor solution; performing a hydrothermal reaction on the precursor solution to obtain a molybdenum disulfide material; and performing phosphorus doping treatment on the molybdenum disulfide material to obtain the phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material. The preparation method combines hydrothermal synthesis and phosphorus doping, so that the obtained catalyst material has rich active sites, an optimized electronic structure and excellent conductivity, and has a good application prospect in the field of water electrolysis hydrogen production.

This invention discloses a solar cell and a photovoltaic module. The solar cell includes a silicon substrate; a tunneling oxide layer located on the silicon substrate; multiple doped polycrystalline silicon layers, each doped polycrystalline silicon layer including at least a first doped polycrystalline silicon layer formed on the tunneling oxide layer and a second doped polycrystalline silicon layer located on the first doped polycrystalline silicon layer, wherein the phosphorus doping concentration in the first doped polycrystalline silicon layer is less than the phosphorus doping concentration in the second doped polycrystalline silicon layer; at least one barrier layer, including a first barrier layer located between the first and second doped polycrystalline silicon layers; and a first electrode located on the multiple doped polycrystalline silicon layers and electrically connected to the different doped polycrystalline silicon layers. This invention can reduce the total thickness of the polycrystalline silicon to reduce parasitic absorption, and the barrier layer prevents the risk of the paste burning through the tunneling oxide layer, thereby improving the photoelectric conversion efficiency.

The invention discloses a TOPCon solar cell and a preparation method thereof, and belongs to the field of solar cells, a laminated structure of a tunneling oxide layer / a first amorphous silicon layer / a first PSG layer / a second amorphous silicon layer / a second PSG layer is formed on the back surface of a silicon wafer, and a first phosphorus-doped polycrystalline silicon layer and a second phosphorus-doped polycrystalline silicon layer are formed after phosphorus diffusion; wherein the phosphorus doping concentration of the first phosphorus-doped polycrystalline silicon layer is lower than that of the second phosphorus-doped polycrystalline silicon layer. The distribution of phosphorus atoms in the doped polycrystalline silicon layer is controlled, so that the phosphorus doping concentration, close to the silicon substrate, of the metal electrode contact area is low, and the passivation performance between the silicon substrate and the tunneling oxide layer is improved in cooperation with the tunneling oxide layer; the doping concentration of phosphorus close to the metal electrode is high, and the contact performance is improved, so that phosphorus atoms entering the silicon substrate are reduced, and the temperature window of phosphorus diffusion is increased.

An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

This invention belongs to the field of semiconductor technology, and particularly relates to a low-concentration phosphorus-doped structure, its fabrication method, and solar cells. Compared with existing technologies, this invention introduces a low-concentration phosphorus diffusion region on the front side of the silicon substrate, which has a gettering effect on metal impurities and helps to improve bulk lifetime. Secondly, the introduction of a phosphorus front field on the front surface allows some electrons to be transferred to the N-type doped region through the front field, thereby helping to maintain the battery's flyback factor (FF) without decreasing while increasing the area ratio of the P-type doped region on the back side and the short-circuit current. Furthermore, the structure with a front-side phosphorus-doped diffusion region can reduce the degree of lifetime decay and efficiency reduction of the battery under ultraviolet irradiation, and the phosphorus-doped diffusion region can introduce impurities such as carbon and phosphorus into the silicon substrate, thereby improving the mechanical properties of the silicon substrate.

The embodiment of the invention provides an RC-IGBT device and a preparation method, the device comprises an N-drive region (1), a P + collector region (2) and an FS structure (3), and the FS structure (3) is connected below the N-drive region (1) and above the P + collector region (2); the lower structure and the upper structure are connected with the FS structure (3), the upper structure is connected to the N-drive region (1), the lower structure is connected to the P + Colletor region (2), and the phosphorus doping concentration of the lower structure is lower than that of the upper structure so as to increase the parasitic resistance above the P + Colletor region (2), that is, the short-circuit resistance of the P + Colletor region (2) at the collector side is increased, and the snapback phenomenon can be inhibited. And the width of the P + Collector region (2) is also reduced, so that the overall size of the primitive cell is reduced.

The utility model relates to a phosphorus supply device, a phosphorus doping system and a solar cell manufacturing production line. The phosphorus supply device comprises a plurality of phosphorus supply assemblies, each phosphorus supply assembly comprises a phosphorus supply container, a phosphorus supply air inlet pipe and a phosphorus supply air outlet pipe, and the phosphorus supply air inlet pipes and the phosphorus supply air outlet pipes are both communicated with the phosphorus supply containers; the phosphorus supplementing assembly comprises a phosphorus supplementing container, a phosphorus supplementing air inlet pipe and a phosphorus supplementing pipeline unit, the phosphorus supplementing air inlet pipe is communicated with the phosphorus supplementing container, and the phosphorus supplementing container is communicated with all the phosphorus supplying containers through the phosphorus supplementing pipeline unit; wherein the phosphorus supply gas inlet pipe and the phosphorus supplement gas inlet pipe are used for inputting bubbling gas into the phosphorus supply container and the phosphorus supplement container respectively. According to the phosphorus supply device, the phosphorus doping system and the solar cell manufacturing production line, the phosphorus doping effect can be improved, and phosphorus source waste can be reduced.

The invention provides a preparation method of a long-circulation high-rate silicon-carbon negative electrode material. The preparation method comprises the following steps: a defect carbon layer coating / phosphorus doping step; a silicon deposition step; sequentially repeating the defect carbon layer coating / phosphorus doping step and the silicon deposition step for n times to obtain silicon-phosphorus doped porous carbon; and a carbon coating step: setting an area formed by the protective gas as a fifth temperature area, introducing hydrocarbon gas from bottom to top, and carrying out carbon coating on the silicon-phosphorus doped porous carbon to obtain the long-circulation high-rate silicon-carbon negative electrode material. The rate capability and the cycle life of the material are remarkably improved, and the material is an ideal lithium battery negative electrode material.

The invention discloses a bismuth telluride-based thermoelectric material and a preparation method thereof.The bismuth telluride-based thermoelectric material comprises a bismuth telluride layer, an electrode layer and a protective layer which are sequentially stacked from bottom to top, and the electrode layer is a phosphorus-doped nickel-based alloy coating; when the bismuth telluride layer is a P-type bismuth telluride layer, in the electrode layer, the mass percentage of doped phosphorus is 0-10%, and no 0 endpoint is included; when the bismuth telluride layer is an N-type bismuth telluride layer, in the electrode layer, the mass percentage of doped phosphorus is 0-5%, and no 0 endpoint is included. In the bismuth telluride-based thermoelectric material, the contact resistance between the bismuth telluride-based thermoelectric material and the plating layer is relatively low, and the influence on the thermoelectric figure of merit is relatively small.

The application discloses a kind of phosphorus doped carbon-coated co-modified MXene-based nanocomposites and its preparation method and application.The method is by introducing dopamine self-polymerization on the surface of MXene to form a coating layer, and introducing phosphorus source in the high-temperature carbonization process, realizing the synergistic modification of carbon coating and phosphorus doping.The carbon layer formed not only improves the conductivity of the material and inhibits the self-stacking of the sheet, but also effectively prevents the side reaction between MXene and phosphorus source under high temperature conditions to generate phosphate impurities, thereby maintaining the structural stability of the material;At the same time, the phosphorus element is doped into the carbon layer in the form of P-C bond, providing additional pseudo-capacitive active sites and promoting ion transport.The method is simple, reproducible, without complex additives, with good scalability and environmental friendliness.The prepared composite electrode material has high specific capacitance, excellent rate performance and long-term cycle stability, and has wide application prospects in the field of energy storage such as water-based hybrid supercapacitors.

Method for Czochralski growth of an n-doped silicon ingot for IGBTs, the method comprising: Melting a mixture of a silicon material suitable for the production of IGBTs and phosphorus in a crucible (105), Extracting the silicon ingot (12) for IGBTs from the molten silicon (110) over an extraction time period, and Addition of boron to the molten silicon (110) for at least part of the extraction time, thereby partially compensating the n-doping of the silicon ingot, and the phosphorus doping concentration in a range of 2×10 13 cm -3 and 1x10 14 cm -3 is set, and wherein the boron is added to the molten silicon (110) from a boron-doped quartz material.

The application discloses a preparation method and application of a nitrogen and phosphorus doped carbon coated metal structure catalyst, and comprises the following steps: according to the mass ratio of microorganisms, biomass and water, 0.1-10 g:10-50 g:10-50 g of corresponding substances are weighed and mixed and stirred, and a metal impregnation solution (for example, [PdCl4] 2‑ , [NiCl4] 2‑ , [CoCl4] 2‑ , [RuCl4] 2‑ , etc.) is added, and then a nitrogen and phosphorus doped carbon coated metal palladium catalyst (the total loading amount of N and P of the catalyst is 1.0-6.0%, and the loading amount of the metal is 0.5-8%) is obtained through hydrothermal carbonization, pyrolysis or microwave, etc. The application adopts the biomass and microorganism interaction to further form a nitrogen and phosphorus doped carbon coating layer, and the nitrogen and phosphorus doped carbon coating layer has a stronger interaction with palladium or other metals, and shows the characteristics of high activity, selectivity and acid resistance in a chloronitrobenzene hydrogenation reaction.