11 results about "Phosphorus doped" patented technology

This invention discloses a modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal and its preparation method, relating to the field of water treatment technology. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal comprises the following components by weight: 100 parts titanium source, 10-25 parts iron source, 1-10 parts phosphorus source, 30-60 parts composite chelating agent, and 0-50 parts functional adjustment precursor. The titanium and iron sources form a primary porous framework, and the phosphorus source is doped and modified on the surface and within the pores of the primary porous framework. The modified iron-phosphorus-doped titanium-based composite material for highly selective thallium removal provided by this invention significantly enhances surface activity through the co-doping of iron and phosphorus elements; and the introduction of the composite chelating agent effectively solves the problem of excessively rapid hydrolysis of the titanium source, enabling the material to form a structurally stable porous framework at a lower temperature, while also exhibiting excellent versatility and scalability.

The present application relates to a kind of porous carbon material with three-level structure and its preparation method, belong to porous carbon material technical field.The porous carbon material is hierarchical porous carbon core-dense carbon shell-phosphorus doped gradient surface layer three-level structure, core layer realizes microporous / mesoporous hierarchical pore, shell layer reduces surface defects and improves mechanical strength, gradient surface layer gives controllable surface chemical property.Preparation uses green pore-forming, integrated continuous heat treatment, CVD coating and phosphorus doping process, without strong acid, toxic crosslinking agent and a large amount of organic solvent, process is short, energy consumption is low, and environmental protection is strong.The material of the present application has high specific surface area, optimized mesopore ratio and uniform phosphorus doped surface, and can be widely applied in adsorption separation, catalyst carrier, gas storage and other fields, with significant industrialization value.

The application discloses a P-type TOPCon cell and a preparation method thereof. The P-type TOPCon cell takes P-type crystalline silicon as a substrate, and the front surface of the P-type TOPCon cell comprises, from inside to outside, a tunneling oxide layer, a phosphorus-doped polysilicon stack and a front composite passivation layer. The phosphorus-doped polysilicon stack comprises, from inside to outside, a first phosphorus-doped polysilicon film, a first silicon oxide film, a second phosphorus-doped polysilicon film, a second silicon oxide film and a third phosphorus-doped polysilicon film. The phosphorus doping concentration and the thickness of the third phosphorus-doped polysilicon film are greater than those of the first phosphorus-doped polysilicon film. The preparation method comprises preparing the tunneling oxide layer, the phosphorus-doped polysilicon stack and the front composite passivation layer on the front surface of the P-type crystalline silicon. The P-type TOPCon cell has the advantages of excellent anti-space radiation capability, high conversion efficiency, long service life and the like. As a novel solar cell with excellent performance, the P-type TOPCon cell can adapt to a harsh space environment and meet the demand of modern spacecraft for high-performance power supplies.

The application provides a preparation method of a bifunctional electrolysis water nitrogen-phosphorus doped high-entropy catalyst, and belongs to the technical field of hydrogen production by electrolysis of water. The method first pretreats a metal substrate, then adsorbs a five-metal precursor solution containing nickel, molybdenum, cobalt, zirconium and iron by immersion, and rapidly constructs a high-entropy oxide structure by using instantaneous Joule heat technology. The core innovation is to use the reducing atmosphere generated by the in-situ decomposition of ammonium hypophosphite and sodium hypophosphite in the Joule heat process to realize the synchronous nitrogen-phosphorus modification of the material surface, which shortens the time-consuming of the traditional process from several hours to seconds and significantly reduces the energy consumption. The finally prepared catalyst has excellent hydrogen evolution (HER) and oxygen evolution (OER) bifunctional activity and chemical stability: the OER overpotential is less than 230 mV, and the HER overpotential is less than 50 mV at a current density of 10 mA·cm ‑2 The electrolysis voltage remains stable in fluctuation electrolysis test, start-stop test and constant current electrolysis, and has excellent stability.

The application discloses a phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production energy conversion. The catalyst material comprises a molybdenum disulfide matrix with a three-dimensional nanometer network structure, and phosphorus atoms and / or phosphorus ions doped in the molybdenum disulfide matrix. The preparation method comprises the following steps: dissolving a molybdenum source and a sulfur source in deionized water to prepare a precursor solution; performing a hydrothermal reaction on the precursor solution to obtain a molybdenum disulfide material; and performing phosphorus doping treatment on the molybdenum disulfide material to obtain the phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material. The preparation method combines hydrothermal synthesis and phosphorus doping, so that the obtained catalyst material has rich active sites, an optimized electronic structure and excellent conductivity, and has a good application prospect in the field of water electrolysis hydrogen production.

This invention discloses a solar cell and a photovoltaic module. The solar cell includes a silicon substrate; a tunneling oxide layer located on the silicon substrate; multiple doped polycrystalline silicon layers, each doped polycrystalline silicon layer including at least a first doped polycrystalline silicon layer formed on the tunneling oxide layer and a second doped polycrystalline silicon layer located on the first doped polycrystalline silicon layer, wherein the phosphorus doping concentration in the first doped polycrystalline silicon layer is less than the phosphorus doping concentration in the second doped polycrystalline silicon layer; at least one barrier layer, including a first barrier layer located between the first and second doped polycrystalline silicon layers; and a first electrode located on the multiple doped polycrystalline silicon layers and electrically connected to the different doped polycrystalline silicon layers. This invention can reduce the total thickness of the polycrystalline silicon to reduce parasitic absorption, and the barrier layer prevents the risk of the paste burning through the tunneling oxide layer, thereby improving the photoelectric conversion efficiency.

An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

This invention belongs to the field of semiconductor technology, and particularly relates to a low-concentration phosphorus-doped structure, its fabrication method, and solar cells. Compared with existing technologies, this invention introduces a low-concentration phosphorus diffusion region on the front side of the silicon substrate, which has a gettering effect on metal impurities and helps to improve bulk lifetime. Secondly, the introduction of a phosphorus front field on the front surface allows some electrons to be transferred to the N-type doped region through the front field, thereby helping to maintain the battery's flyback factor (FF) without decreasing while increasing the area ratio of the P-type doped region on the back side and the short-circuit current. Furthermore, the structure with a front-side phosphorus-doped diffusion region can reduce the degree of lifetime decay and efficiency reduction of the battery under ultraviolet irradiation, and the phosphorus-doped diffusion region can introduce impurities such as carbon and phosphorus into the silicon substrate, thereby improving the mechanical properties of the silicon substrate.

The application discloses a kind of phosphorus doped carbon-coated co-modified MXene-based nanocomposites and its preparation method and application.The method is by introducing dopamine self-polymerization on the surface of MXene to form a coating layer, and introducing phosphorus source in the high-temperature carbonization process, realizing the synergistic modification of carbon coating and phosphorus doping.The carbon layer formed not only improves the conductivity of the material and inhibits the self-stacking of the sheet, but also effectively prevents the side reaction between MXene and phosphorus source under high temperature conditions to generate phosphate impurities, thereby maintaining the structural stability of the material;At the same time, the phosphorus element is doped into the carbon layer in the form of P-C bond, providing additional pseudo-capacitive active sites and promoting ion transport.The method is simple, reproducible, without complex additives, with good scalability and environmental friendliness.The prepared composite electrode material has high specific capacitance, excellent rate performance and long-term cycle stability, and has wide application prospects in the field of energy storage such as water-based hybrid supercapacitors.

A method for forming a power semiconductor device, the method comprising: Providing a semiconductor wafer (101) with a phosphorus doping concentration of less than 10 15 / cm 3 , which has grown through a Czochralski process and has a first page (101a); Forming an n-type substrate doping layer (105) with phosphorus as the dopant in the semiconductor wafer (101) at the first side (101a), wherein the substrate doping layer (105) has a doping concentration of at least 10 17 / cm 3 , typically of at least 10 18 / cm 3 exhibits; Forming an epitaxial layer (110) on the first side (101a) of the semiconductor wafer (101) after forming the substrate doping layer (105) Images of a dopant layer (115) in the epitaxial layer (110) during growth of the epitaxial layer (110) by diffusion of dopants from the substrate dopant layer (105) into the epitaxial layer (110); and Forming a power semiconductor device (100) with the doping layer (115) as a functional layer of the power semiconductor device (100).

The application discloses an SOI MOS device based on a strain technology and a preparation method thereof. The method comprises the following steps: providing a substrate; using an intelligent stripping technology to manufacture an SOI buried oxygen layer and a silicon nitride reinforcing structure, the SOI buried oxygen layer is located in the substrate, the silicon nitride reinforcing structure is located in the buried oxygen layer and is formed by locally slotting and filling silicon nitride; performing phosphorus doping on the substrate to adjust a threshold voltage; manufacturing a dummy gate on the surface of the upper body silicon, performing oxidation treatment on the sidewall of the dummy gate to form a sidewall; sequentially preparing a Halo and a source-drain extension region through an ion implantation technology; performing active region implantation to form self-aligned source and drain electrodes, removing the dummy gate, and manufacturing a gate in the exposed gate area; and depositing a silicon nitride film on the surface of the substrate and the gate as a stress layer to obtain the prepared SOI MOS device. By introducing the SOI buried oxygen layer and the silicon nitride reinforcing structure, the anti-radiation performance and the heat dissipation capacity of the SOI MOS device are optimized.