172 results about "Phosphorus doping" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention relates to the technical field of sensors, in particular to a high-sensitivity pressure-temperature dual-mode sensor and a preparation method thereof.The preparation method comprises the steps that a carbon nano tube is subjected to acid treatment and then reacts with a silane coupling agent KH550, and an aminated carbon nano tube is prepared; the method comprises the following steps: carrying out hydrothermal reaction on a phosphorus source and a graphene oxide aqueous solution to prepare phosphorus-doped reduced graphene oxide; the preparation method comprises the following steps: synthesizing Au-Ag heterojunction nano dispersion liquid through an Au nano seed method; mixing the three components and carrying out ultrasonic treatment to obtain mixed dispersion liquid; the preparation method comprises the following steps: modifying a PDMS substrate with KH560 and polyethylene glycol diamine to prepare a modified PDMS substrate; and coating the mixed dispersion liquid on a modified substrate to form a sensitive layer, and preparing an electrode to obtain the sensor. The aminated carbon nanotubes and the phosphorus-doped reduced graphene oxide construct a three-dimensional conductive network, so that high-sensitivity pressure detection is realized; the phosphorus-doped reduced graphene oxide and the Au-Ag heterojunction form a Schottky barrier, so that stable temperature sensing is realized; and the modified PDMS and the sensitive layer are strongly combined to improve the mechanical durability.

The invention provides a silicon-carbon negative electrode material and a preparation method thereof, a negative electrode and a lithium ion battery, and particularly relates to the technical field of negative electrode materials, the silicon-carbon negative electrode material comprises a porous carbon substrate, a silicon-containing substance and a phosphorosilicate glass coating layer, the silicon-containing substance is loaded in pore channels of the porous carbon substrate and forms a silicon-carbon compound, and the phosphorosilicate glass coating layer is coated with the silicon-carbon compound. The surface of the silicon-carbon compound is coated with the phosphorosilicate glass coating layer, phosphorus elements entering the silicon-carbon compound through thermal diffusion doping are arranged in the silicon-carbon compound, and a phosphorus-doped region is formed. The phosphorosilicate glass coating layer improves the strength of the silicon-carbon negative electrode and inhibits the volume expansion of the silicon-carbon negative electrode material. Meanwhile, the electrical property of the silicon-carbon negative electrode is improved through phosphorus doping, the structural stability and the electrochemical performance of the silicon-carbon negative electrode are improved, and the cycle life is prolonged.

The invention discloses a preparation method of phosphorus-doped and closed-pore synergistically regulated biomass hard carbon and application of the phosphorus-doped and closed-pore synergistically regulated biomass hard carbon in a negative electrode of a sodium-ion battery, and belongs to the technical field of electrode materials. The preparation method comprises the following steps: preparing a water-based starch suspension with a certain mass fraction by taking starch as a biomass precursor, carrying out a cross-linking reaction through sodium trimetaphosphate to form a phosphate ester bond bridged stable network structure, pre-oxidizing the cross-linked precursor, and then carbonizing in a high-temperature inert atmosphere to obtain the water-based starch composite material. And the hard carbon material with expanded interlayer spacing, phosphorus doping and high closed pore volume is prepared. The material shows high reversible capacity, high initial coulombic efficiency, excellent rate capability and cycling stability when being used as a sodium-ion battery negative electrode active material. According to the preparation method disclosed by the invention, through a simple cross-linking-carbonizing process, cooperative regulation and control of heteroatom doping and a closed-pore structure are realized, and a new strategy is provided for large-scale preparation of the high-performance biomass hard carbon negative electrode.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a solar cell production line. The preparation method of the solar cell comprises the following steps: forming a first lamination layer comprising a first tunneling layer, a boron-doped polycrystalline silicon layer and a first mask layer on a first surface of an N-type silicon substrate; corresponding parts of the first lamination layer and the N-type silicon substrate in the second region and at least part of the spacer region are removed, so that a groove is formed in the N-type silicon substrate, and the groove surface, formed in the N-type silicon substrate, of the groove is arc-shaped; forming a second lamination layer comprising a second tunneling layer, a phosphorus-doped polycrystalline silicon layer and a second mask layer which are laminated in sequence on the whole side of the first surface; the winding plating layer is removed, the winding plating layer is wound and plated on the second surface of the N-type silicon substrate when the first lamination layer and / or the second lamination layer are / is formed, and the second surface is opposite to the first surface; removing corresponding parts of the second lamination layer in the first region and the spacer region; and removing the first mask layer and the second mask layer.

The present disclosure relates to the technical field of solar cells. Disclosed are a solar cell, a preparation method therefor and a use thereof. A P-type doped region and an N-type doped region are alternately arranged on the back surface of a crystalline silicon substrate; a boron diffusion doped layer, a first passivation layer and a first anti-reflection layer are sequentially formed in the P-type doped region; and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second anti-reflection layer are sequentially formed on the surface of the crystalline silicon substrate in the N-type doped region. The P regions of traditional TBC cells mostly adopt a two-step process of depositing intrinsic amorphous silicon and performing boron diffusion to form a polycrystalline silicon layer. However, the P region of the present disclosure does not contain a polycrystalline silicon layer, and can be prepared by a one-step boron diffusion process, which can reduce the process steps and shorten the process time. The interaction between laser and the polycrystalline silicon in the P region is also avoided, the difficulty of cell patterning is reduced, and the production yield of cells can be greatly improved.

The invention provides a phosphorus-nickel co-doped carbon nitride composite material for photocatalytic-Fenton degradation of pollutants and a preparation method and application thereof, and the preparation method comprises the following steps: in a muffle furnace, heating urea and ammonium dihydrogen phosphate to convert into phosphorus-doped carbon nitride; the preparation method comprises the following steps: dissolving phosphorus-doped carbon nitride in absolute ethyl alcohol, adding an anhydrous nickel chloride aqueous solution, carrying out ultrasonic treatment, drying, placing in a muffle furnace, and carrying out high-temperature heating conversion to obtain the phosphorus-nickel co-doped carbon nitride composite material. According to the metal monatomic catalyst synthesized by adopting a specific preparation method, the yield of photo-generated hydrogen peroxide is selectively improved while separation and transfer of photo-generated carriers are synergistically promoted by two sites; and the iron circulation can be well promoted, so that the photocatalytic-Fenton pollutant degradation effect which is comparable with that of precious metal doping is realized.

The invention relates to the field of positive electrode materials, in particular to a carbon-coated lithium iron phosphate positive electrode material and a preparation method thereof, which are used for solving the core pain points that the lithium iron phosphate positive electrode material is low in electronic conductivity, slow in ion diffusion and easy to agglomerate particles in circulation. The carbon-coated lithium iron phosphate positive electrode material comprises a phosphorus-doped modified carbon nanotube, N-methyl pyrrolidone and lithium iron phosphate powder, the preparation method comprises the following steps: firstly, modifying a carbon nano tube by using a carbon nano tube modifier, then carrying out phosphorus doping to obtain a phosphorus-doped modified carbon nano tube, and then carrying out carbon coating treatment on lithium iron phosphate by using the phosphorus-doped modified carbon nano tube, the electron and ion transmission efficiency is remarkably improved, the high-rate discharge performance is optimized, the cycle stability is enhanced, and volume expansion and side reaction are inhibited.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The invention discloses a passivation contact cell with a selective Poly structure, a preparation method of the passivation contact cell and a photovoltaic module. The passivation contact cell comprises an N-type silicon wafer substrate, a metal contact area and a non-metal contact area, wherein the metal contact area is sequentially provided with a phosphorus diffusion layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a back surface passivation anti-reflection film from inside to outside; the non-metal contact region comprises a third region with phosphorus diffusion and a fourth region with a recess on the silicon substrate, the third region is sequentially provided with a phosphorus diffusion layer and a back surface passivation anti-reflection film from inside to outside, and the fourth region is provided with a back surface passivation anti-reflection film on the surface of the recess structure. According to the passivation contact battery, the transverse transmission of back current can be improved, the filling factor of the battery is improved, and the Voc of the battery can be prevented from being greatly reduced. And the optical performance of the cell can be remarkably improved, and the long-wave quantum efficiency is improved, so that the current and double-sided rate of the cell are improved.

The invention provides a preparation method of a back contact solar cell, and the method comprises the steps: providing a solar cell substrate which comprises a silicon wafer, and the back surface of the silicon wafer is provided with a first region and a second region, a first tunneling oxide layer, a boron-doped polycrystalline silicon layer, a borosilicate glass layer, a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the first region, and a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the second region; forming a boron-phosphorosilicate glass layer on the back surface of the solar cell substrate; performing first laser processing on the edge of the second area and the first area; texturing the front surface of the silicon wafer, and etching the first laser processing area on the back surface of the silicon wafer; removing the second tunneling oxide layer and the borosilicate glass layer in the first region, and removing the boron-phosphorosilicate glass layer and the phosphorosilicate glass layer in the second region; and preparing a first electrode and a second electrode. According to the preparation method, the conversion efficiency and the yield of the back contact solar cell can be improved.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

The invention relates to the technical field of lithium ion battery manufacturing, and discloses a preparation method of a silicon-containing silicon oxide-phenolic resin-artificial graphite composite negative electrode material, which comprises the following steps: grafting phytic acid on the surface of silicon-containing silicon oxide to construct a protonated acidic site, mixing modified silicon-containing silicon oxide, phenolic resin and artificial graphite, and keeping at a constant temperature to obtain the silicon-containing silicon oxide-phenolic resin-artificial graphite composite negative electrode material. Preferentially carrying out pre-polycondensation by utilizing phytic acid catalysis interface resin to form a gel layer, and rapidly removing a solvent to obtain a precursor; according to the preparation method disclosed by the invention, interface chemical anchoring is established before solvent volatilization by utilizing a dynamic competitive mechanism, so that the problem of stripping of resin and active particles caused by solvent volatilization in a traditional process is solved, and the structural stability and the electric conduction continuity of the material in a battery circulation process are improved.

The invention discloses a high-temperature sodium ion battery hard carbon negative electrode material and a preparation method thereof, and the preparation method comprises the following steps: S1, biomass precursor preparation: crushing a biomass raw material, soaking in deionized water, and centrifugally drying to obtain a biomass precursor; s2, pre-carbonization treatment: carrying out pre-carbonization treatment, and crushing and sieving to obtain a pre-carbonized material; s3, acid pickling treatment: mixing the pre-carbonized material with an acid solution, heating, washing, centrifuging and drying to obtain an acid-pickled pre-carbonized material; s4, high-temperature phosphorus doping treatment: performing high-temperature doping treatment on the pre-carbonized material and a phosphorus source to obtain a phosphorus-doped pre-carbonized material; s5, carbon coating treatment: carrying out carbon coating treatment to obtain a coating material; and S6, Joule thermal instantaneous sintering treatment: performing Joule thermal instantaneous sintering to obtain the high-temperature sodium-ion battery hard carbon negative electrode material. The lithium ion battery has the characteristics of good high-temperature stability, excellent cycle performance and high coulombic efficiency.

The invention relates to a synthesis method of novel energy-saving phosphorus-doped copper oxide, a catalyst as well as a preparation method and application of the catalyst. The synthesis method comprises the following steps: S100, obtaining copper oxide nanoparticles; s200, obtaining a black phosphorus nanosheet; s300, the copper oxide nanoparticles and the black phosphorus nanosheets are mixed and then subjected to ultrasonic treatment, and phosphorus-doped copper oxide is obtained.According to the method, the phosphorus-doped copper oxide nanoparticle catalyst can be synthesized under the mild condition, and very high methanol oxidation reaction activity and formate selectivity are achieved.

The invention discloses a magnetic limited phosphorus-doped photocatalyst as well as a preparation method and application thereof, and belongs to the field of functional materials for pretreatment of environmental chemical pollutants. The preparation method comprises the following steps: preparing magnetic Fe3O4.TiO2 by adopting a microwave method, and introducing a C18 modified carbon framework material and phosphate ions by taking the magnetic Fe3O4.TiO2 as a matrix to prepare the magnetic limited-access phosphorus-doped photocatalyst. The magnetic limited phosphorus-doped photocatalyst disclosed by the invention has the ultrahigh saturated adsorption capacity of a C18 modified carbon framework material, the instantaneous solid-liquid separation capacity and the efficient photocatalytic degradation capacity of nano titanium dioxide modified magnetic ferroferric oxide and the synergistic photocatalytic performance of phosphate; the problem that a traditional photocatalyst is poor in adsorption capacity is fundamentally solved, and the photocatalyst has more advantages in the aspects of adsorption removal and photocatalytic degradation of bisphenol organic pollutants in an environmental water sample.

The invention belongs to the field of carbon-based electrode materials, and discloses a three-dimensional structure graphene material loaded with phosphorus-doped carbon nitride quantum dots as well as a preparation method and application of the three-dimensional structure graphene material. The three-dimensional structure graphene material is prepared through a simple hydrothermal reaction, phosphorus-doped carbon nitride quantum dots are uniformly dispersed on a graphene sheet layer, and nitrogen and phosphorus are successfully introduced into graphene through in-situ loading of the phosphorus-doped carbon nitride quantum dots. The graphene material with the three-dimensional structure integrally presents a good self-supporting three-dimensional skeleton structure, an electrode can be directly prepared under the condition that a conductive agent and a binder are not added, and the supercapacitor taking the graphene material with the three-dimensional structure loaded with the phosphorus-doped carbon nitride quantum dots as the electrode shows excellent electrochemical performance; wide application prospects are realized in the fields of electrode materials and energy storage devices.

This invention relates to the field of chip technology, specifically to a high-voltage GPP chip with composite trenches and its fabrication method, comprising: N layers arranged sequentially from bottom to top. + Substrate, N-layer, P-layer + Layer, the N + The substrate layer and the N layer form an N-N + Substrate, the P + Layer P and N layers constitute P + -N junction; trenches in the chip edge region, with the inner walls of the trenches covered by a composite passivation layer, the composite passivation layer comprising an inner boron-doped silicon glass layer and an outer phosphorus-doped silicon glass layer; an isolation ring on the inner side of the trench; covering P + Layer surface and N + The metal layer on the lower surface of the substrate serves as the electrode lead-out layer of the chip. The optimized fabrication process of this invention is highly compatible with each structure, achieving a comprehensive improvement in the overall performance of the chip. The matching of each fabrication step with the structural design allows the functions of each component of the chip to be fully utilized, synergistically achieving a comprehensive effect of high breakdown voltage, low leakage current, low forward voltage drop, and excellent high-temperature stability.

The invention discloses a preparation method of a phosphorus-doped nickel-manganese bimetallic sulfide composite material and application of the phosphorus-doped nickel-manganese bimetallic sulfide composite material in a supercapacitor. According to the method, used raw materials are easy to obtain, the price is relatively low, and the cost is low; and the preparation process is simple, short in period and suitable for batch production and commercial application. The specific capacity and the energy density efficiency of the supercapacitor prepared by taking the prepared phosphorus-doped nickel-manganese bimetallic sulfide composite material as a positive electrode material of the supercapacitor and conductive carbon black as a negative electrode can be greatly improved; the requirement of a battery market on a high-specific-capacity battery is met; the method has high practical application value.

The invention discloses a phosphorus-doped composite photo-anode catalyst for regulating and controlling a Co3O4 / Fe2O3 electronic structure as well as a preparation method and application of the phosphorus-doped composite photo-anode catalyst, and belongs to the technical field of hydrogen production by photoelectrochemical decomposition of water. The preparation method comprises the following steps that a Fe2O3 photo-anode is immersed in a ZIF-67 precursor solution, ZIF-67 is deposited in situ, and then a Co3O4 / Fe2O3 p-n heterojunction is obtained through calcination; and finally, carrying out annealing treatment by taking sodium hypophosphite as a phosphorus source in an inert atmosphere to realize phosphorus doping of Co3O4. According to the invention, the Co3O4 / Fe2O3 p-n heterojunction photoanode derived from ZIF-67 is prepared, and the electronic structure of Co3O4 is further modulated through P doping. Wherein an embedded electric field generated by the Co3O4 / Fe2O3 p-n heterojunction effectively promotes the rapid transfer of interface charges; p doping further adjusts the electronic structure of Co3O4, so that the energy barrier of the oxygen evolution reaction (OER) rate determination step is reduced, and the OER kinetics is accelerated; the synergistic effect of p-n heterojunction and electronic structure modulation significantly improves the water oxidation activity of Fe2O3.

This invention relates to the field of photocatalyst technology, specifically to a Ni single-atom / phosphorus / g-C3N4 composite material, its preparation method, and its applications. The Ni single-atom / phosphorus / g-C3N4 composite material provided by this invention uses hollow tubular g-C3N4 as a matrix, simultaneously doped with phosphorus and Ni single atoms. Results show that simultaneous doping with phosphorus and Ni single atoms can effectively regulate the electronic configuration of g-C3N4, expand visible light absorption, and promote charge separation and transfer. The hydrogen production rate of the Ni single-atom / phosphorus / g-C3N4 composite material can reach 2707.7 μmol / h. ‑1 g ‑1 The concentrations were approximately 615.4 μmol / h of pure g-C3N4. ‑1 g ‑1 ), phosphorus-doped g-C3N4 composite material (1602.2 μmol h) ‑1 g ‑1 The apparent quantum efficiency of the composite material is 4.4, 1.7, and 1.5 times that of the Ni single-atom doped g-C3N4 composite material; it has an apparent quantum efficiency of 8.8% at 400 nm and exhibits excellent stability in 6 photocatalytic hydrogen production cycles.

A multi-layer composite material comprises a carbon matrix, a nano silicon-based composite material, and a carbon shell. The carbon matrix is a matrix material used for depositing the nano silicon-based composite material. The nano silicon-based composite material is prepared by vapor deposition of silane and one or more gaseous compounds containing any one of C, N, B and P elements. Carbon atoms in the nano silicon-based composite material are uniformly embedded and distributed in an atomic scale, and the carbon atoms and silicon atoms are combined to form amorphous Si—C bonds. Nitrogen atoms and the silicon atoms are combined to form amorphous Si—N bonds. Boron doping and / or phosphor doping forms defects in silicon crystals in the nano silicon-based composite material. The carbon shell coats the outer layer of the carbon matrix on which the nano silicon-based composite material is deposited.

A method for manufacturing a silicon epitaxial wafer comprising a phosphorus-doped silicon wafer and an epitaxial layer provided on a surface of the silicon wafer, wherein the method comprises: forming (S2) an oxide layer on a back side of the silicon wafer cut (S1) from a single-crystal ingot produced by a Czochralski process; removing (S3) the oxide layer present on an outer circumference of the silicon wafer; argon annealing (S4), wherein the silicon wafer is subjected to heat treatment in an argon gas atmosphere after removal of the oxide layer; and forming the epitaxial layer on the surface of the silicon wafer after argon annealing, wherein the formation of the epitaxial layer comprises: pre-baking (S5), wherein the silicon wafer is subjected to heat treatment in a gas atmosphere comprising hydrogen and hydrogen chloride to etch an outer layer of the silicon wafer;and growth (S6) of the epitaxial layer on the surface of the silicon wafer after pre-baking, wherein during argon annealing (S4) clusters of phosphorus and oxygen present on an outer layer of the silicon wafer are dissolved in a solid solution, and during pre-baking (S5) a thickness of the outer layer of the silicon wafer removed by etching is made smaller than a thickness of the outer layer where the clusters are dissolved in the solid solution during argon annealing.;

The application provides a kind of anion and cation double-doped nickel cobalt manganese positive electrode precursor material and its preparation method and application.The nickel cobalt manganese positive electrode precursor material includes precursor matrix material and doping element doped in the precursor matrix material;The doping element includes phosphorus and lanthanum, and the phosphorus doping is phosphate doping.The nickel cobalt manganese positive electrode precursor material provided by the application realizes homogeneous doping of anion and cation through the synergistic doping of phosphate ions and lanthanum, effectively stabilizes lanthanum and phosphorus elements in nickel cobalt manganese, and improves the structural stability of the positive electrode material, thereby improving the electrochemical performance of the positive electrode material.

The invention discloses an ultrathin solar cell with selective polycrystalline silicon passivation contact and a preparation method thereof. The preparation method comprises the following steps: forming a boron-doped emitter on the surface of an N-type monocrystalline silicon wafer; performing ablation treatment on a partial region of the back surface of the silicon wafer to form a sunken structure; polishing and etching the back surface of the silicon wafer to form a plurality of patterned structures; preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the back surface of the silicon wafer; removing the tunneling oxide layer and the doped polycrystalline silicon layer in the non-metal contact area on the back surface of the silicon wafer; according to the method, the silicon wafer cost can be saved, the manufactured ultrathin solar cell has good flexibility, the current value of the cell is increased, and more efficient transmission of carriers in the cell is facilitated.

This invention relates to a high-efficiency, high-capacity silicon-carbon composite anode material, its preparation method, and its application. The silicon-carbon composite anode material comprises: a phosphorus-doped silicon-carbon material, and a composite coating layer covering the outer surface of the phosphorus-doped silicon-carbon material. A Si-P-C bond structure exists between the phosphorus-doped silicon-carbon material and the composite coating layer. The phosphorus-doped silicon-carbon material comprises: a porous carbon matrix, and nano-silicon particles and phosphorus elements deposited in the pores of the porous carbon matrix. The composite coating layer comprises: a carbon coating layer, and C-F bonds formed in situ within the carbon coating layer. Applying the silicon-carbon composite anode material provided in this invention to lithium-ion batteries can improve the first-cycle coulombic efficiency and cycle stability of lithium-ion batteries, and reduce the expansion rate.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.

Semiconductor devices and systems with arsenic-doped sources and drains that include phosphorus-doped contact regions, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes an epitaxial structure and a conductive contact. The epitaxial structure includes silicon, arsenic, and phosphorus, where phosphorus is concentrated in a contact region of the epitaxial structure. The conductive contact is coupled to the contact region of the epitaxial structure, and the conductive contact includes metal.

The invention relates to a method for preparing a BC solar cell through ink-jet corrosion patterning, and the preparation of a TBC cell comprises the following steps: carrying out boron doping on the back surface of a silicon wafer on which a P-region tunneling oxide layer and an intrinsic polycrystalline silicon layer are prepared, then carrying out ink-jet printing of an acid solution, and corroding BSG of an N region and an isolation region; removing the boron-doped polycrystalline silicon layer and the P-region tunneling oxide layer of the N region and the isolation region; carrying out phosphorus doping on the back surface of the silicon wafer on which the N-region tunneling oxide layer and the intrinsic polycrystalline silicon layer are deposited, then carrying out ink-jet printing of acid liquor, and corroding the PSG layers of the P region and the isolation region; texturing the front surface of the silicon wafer; removing the tunneling oxidation and phosphorus-doped polycrystalline silicon layer of the back P region and the N region of the isolation region, and then removing the BSG layer of the back P region and the PSG layer of the N region to form P and N emitters which are distributed in an interdigital manner; preparing an aluminum oxide layer and a silicon nitride layer on two sides of the silicon wafer respectively; and preparing corresponding metal electrodes on the P emitter and the N emitter. The imaging of ink-jet printing corrosion is realized, the corrosion line width can be accurately controlled, and high-precision P and N emitters which are distributed at intervals in an interdigital manner are obtained.

The application provides a hollow thorn ball-like phosphorus-doped cobalt nonanethiolate / nickel foam electrode material and a preparation method thereof, and belongs to the technical field of supercapacitor electrode material preparation. The preparation method is as follows: taking nickel foam (NF) as a current collector, pretreating the NF, preparing a Co(OH)F-NF precursor through hydration, preparing Co9S8-NF through sulfuration, and finally preparing the hollow thorn ball-like P-Co9S8-NF electrode material through phosphorus doping. The preparation process is simple, easy to realize, and low in preparation cost, and can lay a technical support for the preparation of supercapacitor high-conductivity, high-structural-stability and high-energy-storage electrode materials, and has good application value and prospect in the field of supercapacitor electrode materials.