35 results about "Phosphorus doping" patented technology

This invention relates to the field of chip technology, specifically to a high-voltage GPP chip with composite trenches and its fabrication method, comprising: N layers arranged sequentially from bottom to top. + Substrate, N-layer, P-layer + Layer, the N + The substrate layer and the N layer form an N-N + Substrate, the P + Layer P and N layers constitute P + -N junction; trenches in the chip edge region, with the inner walls of the trenches covered by a composite passivation layer, the composite passivation layer comprising an inner boron-doped silicon glass layer and an outer phosphorus-doped silicon glass layer; an isolation ring on the inner side of the trench; covering P + Layer surface and N + The metal layer on the lower surface of the substrate serves as the electrode lead-out layer of the chip. The optimized fabrication process of this invention is highly compatible with each structure, achieving a comprehensive improvement in the overall performance of the chip. The matching of each fabrication step with the structural design allows the functions of each component of the chip to be fully utilized, synergistically achieving a comprehensive effect of high breakdown voltage, low leakage current, low forward voltage drop, and excellent high-temperature stability.

This invention relates to the field of photocatalyst technology, specifically to a Ni single-atom / phosphorus / g-C3N4 composite material, its preparation method, and its applications. The Ni single-atom / phosphorus / g-C3N4 composite material provided by this invention uses hollow tubular g-C3N4 as a matrix, simultaneously doped with phosphorus and Ni single atoms. Results show that simultaneous doping with phosphorus and Ni single atoms can effectively regulate the electronic configuration of g-C3N4, expand visible light absorption, and promote charge separation and transfer. The hydrogen production rate of the Ni single-atom / phosphorus / g-C3N4 composite material can reach 2707.7 μmol / h. ‑1 g ‑1 The concentrations were approximately 615.4 μmol / h of pure g-C3N4. ‑1 g ‑1 ), phosphorus-doped g-C3N4 composite material (1602.2 μmol h) ‑1 g ‑1 The apparent quantum efficiency of the composite material is 4.4, 1.7, and 1.5 times that of the Ni single-atom doped g-C3N4 composite material; it has an apparent quantum efficiency of 8.8% at 400 nm and exhibits excellent stability in 6 photocatalytic hydrogen production cycles.

A method for manufacturing a silicon epitaxial wafer comprising a phosphorus-doped silicon wafer and an epitaxial layer provided on a surface of the silicon wafer, wherein the method comprises: forming (S2) an oxide layer on a back side of the silicon wafer cut (S1) from a single-crystal ingot produced by a Czochralski process; removing (S3) the oxide layer present on an outer circumference of the silicon wafer; argon annealing (S4), wherein the silicon wafer is subjected to heat treatment in an argon gas atmosphere after removal of the oxide layer; and forming the epitaxial layer on the surface of the silicon wafer after argon annealing, wherein the formation of the epitaxial layer comprises: pre-baking (S5), wherein the silicon wafer is subjected to heat treatment in a gas atmosphere comprising hydrogen and hydrogen chloride to etch an outer layer of the silicon wafer;and growth (S6) of the epitaxial layer on the surface of the silicon wafer after pre-baking, wherein during argon annealing (S4) clusters of phosphorus and oxygen present on an outer layer of the silicon wafer are dissolved in a solid solution, and during pre-baking (S5) a thickness of the outer layer of the silicon wafer removed by etching is made smaller than a thickness of the outer layer where the clusters are dissolved in the solid solution during argon annealing.;

This invention relates to a high-efficiency, high-capacity silicon-carbon composite anode material, its preparation method, and its application. The silicon-carbon composite anode material comprises: a phosphorus-doped silicon-carbon material, and a composite coating layer covering the outer surface of the phosphorus-doped silicon-carbon material. A Si-P-C bond structure exists between the phosphorus-doped silicon-carbon material and the composite coating layer. The phosphorus-doped silicon-carbon material comprises: a porous carbon matrix, and nano-silicon particles and phosphorus elements deposited in the pores of the porous carbon matrix. The composite coating layer comprises: a carbon coating layer, and C-F bonds formed in situ within the carbon coating layer. Applying the silicon-carbon composite anode material provided in this invention to lithium-ion batteries can improve the first-cycle coulombic efficiency and cycle stability of lithium-ion batteries, and reduce the expansion rate.

The invention discloses a TBC battery and a preparation method thereof, and belongs to the technical field of solar photovoltaic batteries. The preparation method comprises the following steps: depositing a tunneling layer and a polycrystalline silicon layer on the back surface of an alkali-polished N-type silicon-based substrate; carrying out boron doping and high-temperature oxidation to form a borosilicate glass layer; performing laser etching to form a P-type doped region and an etching region; carrying out alkali washing on the etching region, and depositing a tunneling oxide layer and a phosphorus-doped N-type doping layer; performing crystallization treatment; borosilicate glass layer cleaning is carried out on the P-type doped region, winding plating is carried out on the front surface, and alkali texturing is completed; and depositing an AlOx layer and a SiNx layer on the back surface and the front surface of the product. According to the method, the technological process is simple, compared with the mode that a PVD precise direction coating mode is adopted in the market to achieve isolation of the PN area, one picosecond laser etching procedure can be omitted, the equipment investment can be obviously reduced, the production efficiency can be improved, and the TOPCon technology of an existing PVD route can be upgraded to the TBC technology.

The present application relates to a kind of porous carbon material with three-level structure and its preparation method, belong to porous carbon material technical field.The porous carbon material is hierarchical porous carbon core-dense carbon shell-phosphorus doped gradient surface layer three-level structure, core layer realizes microporous / mesoporous hierarchical pore, shell layer reduces surface defects and improves mechanical strength, gradient surface layer gives controllable surface chemical property.Preparation uses green pore-forming, integrated continuous heat treatment, CVD coating and phosphorus doping process, without strong acid, toxic crosslinking agent and a large amount of organic solvent, process is short, energy consumption is low, and environmental protection is strong.The material of the present application has high specific surface area, optimized mesopore ratio and uniform phosphorus doped surface, and can be widely applied in adsorption separation, catalyst carrier, gas storage and other fields, with significant industrialization value.

A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers, where the pair of alternating stacks are laterally spaced from each other by a lateral isolation trench, memory openings vertically extending through a respective alternating stack of the pair of alternating stacks, memory opening fill structures located in a respective one of the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a lateral isolation trench fill structure located in the lateral isolation trench. Phosphorus-doped silicon oxide portions are located within or on sidewalls of the lateral isolation trench at levels of the insulating layers.

This invention provides a back-contact solar cell and its fabrication method. The back-contact solar cell includes a silicon substrate and further comprises: a first oxide layer, a first boron-doped layer, a second oxide layer, and a second boron-doped layer sequentially disposed in a first region of the silicon substrate away from the silicon substrate; and a first tunneling layer, a first phosphorus-doped layer, a second tunneling layer, and a second phosphorus-doped layer sequentially disposed in a second region of the silicon substrate away from the silicon substrate. The doping concentration of the first boron-doped layer is greater than that of the second boron-doped layer; the doping concentration of the first phosphorus-doped layer is less than that of the second phosphorus-doped layer; and the thickness of the first phosphorus-doped layer is less than that of the first boron-doped layer. The back-contact solar cell and its fabrication method provided by this invention can improve the field-effect passivation effect of the back-contact solar cell and reduce the performance differences between different polarity regions of the back-contact solar cell.

This invention provides a method for preparing phosphorus-doped lithium ferrite using waste lithium iron phosphate (LFP) electrode sheets and the resulting product, belonging to the field of materials synthesis technology. This method creatively recycles waste LFP electrode sheets in the form of phosphorus-doped lithium ferrite, greatly improving their utilization value. The method for synthesizing phosphorus-doped lithium ferrite using waste LFP electrode sheets has the following advantages: 1) This method requires no additional oxidant, is environmentally friendly, and solves the problem of difficult treatment of phosphorus-containing waste from the process; 2) Using waste LFP electrode sheets as raw materials not only reduces costs and yields high-value-added products, but also has high atom utilization, introduces no other impurities, and is pollution-free; 3) Phosphorus doping can improve the conductivity of lithium ferrite, reduce polarization, and improve structural and air stability.

This application provides an N-type TOPCON cell, primarily relating to the field of solar cells. The N+ layer of the N-type TOPCON cell provided in this application includes a first silicon oxide layer, a first polycrystalline silicon layer, a second silicon oxide layer, a second polycrystalline silicon layer, and a silicon nitride layer, extending from the surface of the N-type crystalline silicon substrate away from the substrate surface; the first and second polycrystalline silicon layers are phosphorus-doped polycrystalline silicon layers. This application, through its double-layer phosphorus-doped structure, can reduce the thickness of the polycrystalline silicon layer, thereby weakening parasitic absorption of light, thus increasing the current of the solar cell, and improving the current during efficiency testing in the N+ layer direction, thereby increasing the power generation on the back side of the cell, and ultimately improving the bifaciality.

The utility model relates to the technical field of semiconductor material preparation, and disclose a kind of N type high-purity silicon target material red phosphorus doping device, including reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, reaction chamber adopts quartz material double-layer structure, the inner wall of reaction chamber is provided with silicon nitride coating, the outer wall of reaction chamber is provided with vacuum pump set, rotating support mechanism includes high-temperature ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, by rotating dynamic doping, intelligent temperature control and waste gas circulation technology, significantly improve the uniformity of doping and raw material utilization rate, realize the efficient, uniform doping of silicon target material.

This invention provides a method for high-concentration thick silicon layer doping, belonging to the field of semiconductor silicon doping technology. The invention uses a fixed closed-loop processing unit consisting of shallow junction phosphorus ion implantation, high-temperature annealing, dry oxygen thermal oxidation, and CMP oxide layer removal, repeating this cycle 9 or 10 times to prepare the doped layer. Utilizing the Si / SiO₂ interface dragging effect, the junction depth is gradually increased round by round. Combined with a segmented gradient phosphorus implantation scheme of high dose in the first three rounds and low dose in subsequent rounds, this overcomes the limitation of phosphorus solid solubility in the silicon substrate. The final result is a doped layer with a thickness of 20.1~20.2 μm and a phosphorus doping concentration ≥1×10⁻⁶. 20 This invention produces heavily doped silicon with atoms / cm³ and concentration fluctuation ≤5%. It solves the industry problems of thin doped layers, low concentration, and poor uniformity in existing processes. The entire process is compatible with existing mass production lines, and the prepared silicon substrates are widely used in power semiconductors, RF substrates, and MEMS devices, showing excellent industrialization prospects.

The application discloses a P-type TOPCon cell and a preparation method thereof. The P-type TOPCon cell takes P-type crystalline silicon as a substrate, and the front surface of the P-type TOPCon cell comprises, from inside to outside, a tunneling oxide layer, a phosphorus-doped polysilicon stack and a front composite passivation layer. The phosphorus-doped polysilicon stack comprises, from inside to outside, a first phosphorus-doped polysilicon film, a first silicon oxide film, a second phosphorus-doped polysilicon film, a second silicon oxide film and a third phosphorus-doped polysilicon film. The phosphorus doping concentration and the thickness of the third phosphorus-doped polysilicon film are greater than those of the first phosphorus-doped polysilicon film. The preparation method comprises preparing the tunneling oxide layer, the phosphorus-doped polysilicon stack and the front composite passivation layer on the front surface of the P-type crystalline silicon. The P-type TOPCon cell has the advantages of excellent anti-space radiation capability, high conversion efficiency, long service life and the like. As a novel solar cell with excellent performance, the P-type TOPCon cell can adapt to a harsh space environment and meet the demand of modern spacecraft for high-performance power supplies.

This invention belongs to the field of nanomaterial preparation and application technology, and discloses a phosphorus-doped nickel-cobalt sulfide nanotube catalyst, its preparation method, and its application. The method includes: using metallic nickel salt, cobalt salt, and urea as raw materials, and water as a solvent, preparing a nickel-cobalt hydroxide nanorod precursor via hydrothermal reaction; then synthesizing nickel-cobalt sulfide nanotubes via hydrothermal reaction; and finally obtaining a phosphorus-doped nickel-cobalt sulfide nanotube catalyst with a hollow structure via phosphating. Phosphorus doping effectively optimizes the electronic structure of nickel-cobalt sulfides, improving catalytic performance. The prepared catalyst exhibits excellent catalytic activity in hydrogen evolution and sulfur oxidation reactions. In a two-electrode sulfur ion oxidation coupled hydrogen production electrolyzer, a voltage output of 0.373 V is required to produce 10 mA cm⁻¹. ‑2 The invention achieves the goals of energy-saving hydrogen production and high-value-added elemental sulfur by utilizing a specific current density. Furthermore, the preparation method is simple, the conditions are easily controlled, and the raw materials are low-cost and environmentally friendly, making it widely applicable in fields such as water electrolysis for hydrogen production and sulfur oxidation reactions.

This invention relates to a pressure-resistant silicon-carbon composite material, its preparation method, and its application. The silicon-carbon composite material comprises: phosphorus-doped silicon-carbon particles, and a SiC-P transition layer and a carbon coating layer sequentially coating the outer surface of the phosphorus-doped silicon-carbon particles. The phosphorus-doped silicon-carbon particles comprise: a porous carbon matrix, silicon nanoparticles and phosphorus elements uniformly dispersed in the pores and on the surface of the porous carbon matrix. The SiC-P transition layer is formed in situ by heat treatment of the phosphorus-doped silicon-carbon particles and the carbon coating layer. Applying the pressure-resistant silicon-carbon composite material of this invention to lithium-ion batteries can enhance the first-cycle coulombic efficiency after electrode rolling, improve the energy density and cycle performance of lithium-ion batteries after electrode rolling, reduce the irreversible capacity loss in the first cycle of lithium-ion batteries, reduce raw material waste, and lower production costs.

This application provides an N-type TOPCON cell, belonging to the field of solar cells. The cell includes: an N-type crystalline silicon substrate, a P+ layer, and an N+ layer; the P+ layer is disposed on the front side of the N-type crystalline silicon substrate, and the N+ layer is disposed on the back side of the N-type crystalline silicon substrate; the P+ layer includes at least one antireflection layer, at least six passivation layers, a boron-doped layer, and a P+ passivated emitter; the N+ layer includes a passivation layer, a phosphorus-doped layer, and the passivation layer. The N-type TOPCON cell provided by this application can achieve good chemical passivation and field-effect passivation of the surface of the doped polycrystalline silicon layer, reducing carrier loss due to recombination in the polycrystalline silicon layer and improving the effective output of photogenerated carriers.

The embodiment of the present application provides a solar cell and a photovoltaic system. The solar cell comprises a cell substrate, the cell substrate comprises a substrate, a boron-doped layer and a phosphorus-doped layer, the boron-doped layer and the phosphorus-doped layer are located on opposite sides of the substrate; the boron-doped layer and the phosphorus-doped layer away from the substrate are provided with conductive layers; a metal foil layer is located on the side of the conductive layer away from the substrate, and conductive glue is arranged between the conductive layer and the metal foil layer; wherein the metal foil layer has a grid structure. The solar cell has higher double-side rate and photoelectric performance.

The application discloses a phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production energy conversion. The catalyst material comprises a molybdenum disulfide matrix with a three-dimensional nanometer network structure, and phosphorus atoms and / or phosphorus ions doped in the molybdenum disulfide matrix. The preparation method comprises the following steps: dissolving a molybdenum source and a sulfur source in deionized water to prepare a precursor solution; performing a hydrothermal reaction on the precursor solution to obtain a molybdenum disulfide material; and performing phosphorus doping treatment on the molybdenum disulfide material to obtain the phosphorus-doped molybdenum disulfide water electrolysis hydrogen production catalyst material. The preparation method combines hydrothermal synthesis and phosphorus doping, so that the obtained catalyst material has rich active sites, an optimized electronic structure and excellent conductivity, and has a good application prospect in the field of water electrolysis hydrogen production.

This invention discloses a solar cell and a photovoltaic module. The solar cell includes a silicon substrate; a tunneling oxide layer located on the silicon substrate; multiple doped polycrystalline silicon layers, each doped polycrystalline silicon layer including at least a first doped polycrystalline silicon layer formed on the tunneling oxide layer and a second doped polycrystalline silicon layer located on the first doped polycrystalline silicon layer, wherein the phosphorus doping concentration in the first doped polycrystalline silicon layer is less than the phosphorus doping concentration in the second doped polycrystalline silicon layer; at least one barrier layer, including a first barrier layer located between the first and second doped polycrystalline silicon layers; and a first electrode located on the multiple doped polycrystalline silicon layers and electrically connected to the different doped polycrystalline silicon layers. This invention can reduce the total thickness of the polycrystalline silicon to reduce parasitic absorption, and the barrier layer prevents the risk of the paste burning through the tunneling oxide layer, thereby improving the photoelectric conversion efficiency.

An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

This invention belongs to the field of semiconductor technology, and particularly relates to a low-concentration phosphorus-doped structure, its fabrication method, and solar cells. Compared with existing technologies, this invention introduces a low-concentration phosphorus diffusion region on the front side of the silicon substrate, which has a gettering effect on metal impurities and helps to improve bulk lifetime. Secondly, the introduction of a phosphorus front field on the front surface allows some electrons to be transferred to the N-type doped region through the front field, thereby helping to maintain the battery's flyback factor (FF) without decreasing while increasing the area ratio of the P-type doped region on the back side and the short-circuit current. Furthermore, the structure with a front-side phosphorus-doped diffusion region can reduce the degree of lifetime decay and efficiency reduction of the battery under ultraviolet irradiation, and the phosphorus-doped diffusion region can introduce impurities such as carbon and phosphorus into the silicon substrate, thereby improving the mechanical properties of the silicon substrate.

This application discloses a cathode material, its preparation method, and an all-solid-state battery. It includes a substrate and a first coating layer and a second coating layer sequentially coated on the surface of the substrate. The substrate is a phosphorus-doped spinel-type lithium nickel manganese oxide. The first coating layer includes an oxygen-doped halide electrolyte. The second coating layer includes an Sb / O co-doped argentite-germanium sulfide. The cathode material provided by this application has the advantage of synergistically improved structural stability, interfacial stability, and air stability.

The application discloses a phosphorus-doped copper-cobalt layered double hydroxide-biochar composite material and a preparation method and application thereof, and belongs to the technical field of sewage treatment. The preparation method comprises the following steps: pyrolyzing agricultural waste to obtain biochar; dispersing the biochar, soluble copper salt, soluble cobalt salt, urea and a phosphorus source, i.e., disodium hydrogen phosphate, in water, and preparing a composite material through ultrasonic treatment, hydrothermal reaction and freeze-drying. The composite material prepared by the application builds a stable phosphorus-oxygen-metal interface through phosphorus doping, optimizes the electrical conductivity and pore structure of the biochar, realizes targeted adsorption of pollutants through the pi-pi conjugation and electrostatic interaction between the biochar and neonicotinoid insecticides, and efficiently activates persulfate through a free radical and non-free radical synergistic path. The composite material has the advantages of stable structure, low metal leaching amount and strong anti-interference capability, has a broad-spectrum degradation effect on various neonicotinoid insecticides such as imidacloprid and thiamethoxam, and is suitable for the treatment of neonicotinoid insecticides in complex water environments.

This invention discloses a method for preparing and applying phosphorus-doped sulfur nanoparticles. In these nanoparticles, phosphorus is uniformly distributed on the sulfur nanoparticles, forming S-P chemical bonds between them. Utilizing the properties that elemental phosphorus and sulfur are soluble and miscible in ethylenediamine solution, a solution of sulfur and phosphorus in a specific ratio is prepared and added to an organic solution containing a surfactant. A formic acid solution of a certain concentration is then added dropwise to precipitate the product. After washing and freeze-drying, the phosphorus-doped sulfur nanoparticles are obtained. This preparation method avoids high-temperature heating, directly forming P-S bonds through a wet chemical method to achieve phosphorus doping of sulfur. It boasts a high yield and can be mass-produced. The nano-sized phosphorus-doped sulfur particles, due to their excellent properties such as high specific surface area and nanoscale effect, can be applied in energy storage fields such as lithium-sulfur batteries, exhibiting excellent electrochemical performance.

The application discloses a kind of phosphorus doped carbon-coated co-modified MXene-based nanocomposites and its preparation method and application.The method is by introducing dopamine self-polymerization on the surface of MXene to form a coating layer, and introducing phosphorus source in the high-temperature carbonization process, realizing the synergistic modification of carbon coating and phosphorus doping.The carbon layer formed not only improves the conductivity of the material and inhibits the self-stacking of the sheet, but also effectively prevents the side reaction between MXene and phosphorus source under high temperature conditions to generate phosphate impurities, thereby maintaining the structural stability of the material;At the same time, the phosphorus element is doped into the carbon layer in the form of P-C bond, providing additional pseudo-capacitive active sites and promoting ion transport.The method is simple, reproducible, without complex additives, with good scalability and environmental friendliness.The prepared composite electrode material has high specific capacitance, excellent rate performance and long-term cycle stability, and has wide application prospects in the field of energy storage such as water-based hybrid supercapacitors.

This invention discloses a monitoring method for the laser processing step of solar cells. The monitoring method includes: providing a monitoring sheet, which comprises a crystalline silicon wafer, a phosphorus-doped polycrystalline silicon layer and a phosphosilicate glass layer on a first main surface of the crystalline silicon wafer, a boron diffusion layer, a boron-phosphosilicate glass layer, a first wrap-around coating, and a second wrap-around coating on a second main surface of the crystalline silicon wafer; performing intermittent laser processing on specific areas of the monitoring sheet using the laser processing step to form alternating laser-processed and non-laser-processed areas; removing the second wrap-around coating and the first wrap-around coating from the laser-processed areas; removing the boron-phosphosilicate glass layer and the boron diffusion layer from the laser-processed areas, and the second wrap-around coating, the first wrap-around coating, the boron-phosphosilicate glass layer, and the phosphosilicate glass layer on the first main surface of the crystalline silicon wafer from the non-laser-processed areas and other areas, to obtain the target monitoring sheet; inspecting the target monitoring sheet; and evaluating the laser processing step based on the inspection results. This monitoring method can reliably and effectively monitor the laser processing step.

This application provides a method for fabricating a multilayer silicon oxide anti-UV degradation film structure solar cell, relating to the field of solar cells. The method includes sequentially arranging the following layers in the P+ direction of an N-type crystalline silicon substrate: a first silicon oxide layer, a boron-doped layer, a first aluminum oxide layer, a second silicon oxide layer, a second aluminum oxide layer, a third silicon oxide layer, a first silicon nitride antireflection layer, and a fourth silicon oxide layer; and sequentially arranging the following layers in the N+ direction of the N-type crystalline silicon substrate: a fifth silicon oxide layer, a phosphorus-doped layer, and a second silicon nitride antireflection layer. The fabrication method of the multilayer silicon oxide anti-UV degradation film structure solar cell provided by this application has high controllability and repeatability, and can precisely control the thickness and refractive index of the film layers. Simultaneously, the relatively low price of multilayer silicon oxide materials helps reduce the fabrication cost of the cell, promoting the application and promotion of photovoltaic technology in a wider range of fields.

The application relates to a preparation method of organic amine / phosphorus co-doped manganese dioxide, and belongs to the technical field of material preparation and electrochemical energy storage. The method comprises the following steps: firstly, preparing a manganese dioxide precursor by reacting potassium permanganate and sodium thiosulfate; secondly, introducing organic amine for intercalation doping; and finally, carrying out phosphating treatment on the material by decomposing sodium hypophosphite under an inert atmosphere to obtain organic amine / phosphorus co-doped manganese dioxide. Through the synergistic effect of organic amine intercalation and phosphorus doping, the present application effectively expands the interlayer spacing of manganese dioxide, enhances the structural stability, optimizes the electronic structure and ion transmission kinetics. When the obtained material is used as a positive electrode of a water-based zinc ion battery, the material exhibits high specific capacity, excellent rate performance and long cycle life. The method is simple in process, mild in condition, environment-friendly, suitable for large-scale production, and has wide application prospects in the field of energy storage devices.

This invention discloses a method for preparing a phosphorus-doped nickel-manganese bimetallic sulfide composite material and its application in supercapacitors. The method uses readily available and relatively inexpensive raw materials, resulting in low cost. The preparation process is simple and has a short cycle time, making it suitable for mass production and commercial applications. Supercapacitors made using the phosphorus-doped nickel-manganese bimetallic sulfide composite material prepared in this invention as the positive electrode material and conductive carbon black as the negative electrode can significantly improve their specific capacity and energy density efficiency; meeting the battery market's demand for high-specific-capacity batteries; and possessing high practical application value.

A method for forming a power semiconductor device, the method comprising: Providing a semiconductor wafer (101) with a phosphorus doping concentration of less than 10 15 / cm 3 , which has grown through a Czochralski process and has a first page (101a); Forming an n-type substrate doping layer (105) with phosphorus as the dopant in the semiconductor wafer (101) at the first side (101a), wherein the substrate doping layer (105) has a doping concentration of at least 10 17 / cm 3 , typically of at least 10 18 / cm 3 exhibits; Forming an epitaxial layer (110) on the first side (101a) of the semiconductor wafer (101) after forming the substrate doping layer (105) Images of a dopant layer (115) in the epitaxial layer (110) during growth of the epitaxial layer (110) by diffusion of dopants from the substrate dopant layer (105) into the epitaxial layer (110); and Forming a power semiconductor device (100) with the doping layer (115) as a functional layer of the power semiconductor device (100).