The invention relates to a growth process for N-type
solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds. The appearance is in 6-8 inches, the (100)
crystal orientation resistivity range is between 1
omega.cm and 20
omega.cm, the minority carrier service life of the surface and the section is larger than or equal to 1,000 microseconds, the clearance
oxygen content [Oi] is smaller than or equal to 17.5ppma, and the substituted carbon content [Cs] is smaller than or equal to 0.5ppma.
Phosphorus-doped block-shaped
polycrystalline silicon is used as a
raw material to prepare the N-type
solar energy silicon single crystal. The process comprises the steps of: charging, heating, leading
diameter, maintaining equal
diameter, collecting, cooling, heating by a program, stably heating and melting the material; after a thermal field in melting
silicon is stable, leading the thin
diameter, lifting the
tail part of a
single crystal to the upper edge of a guide cylinder with the
cooling time of not larger than three hours. The
crystal growth process is practical, has high efficiency and low cost, can prepare the N-type
single crystal silicon which is completely larger than or equal to 1,000 microseconds from the head part to the
tail part by a CZ method, and creates an industrialized foundation for efficiency improvement of an efficient
solar battery.