84 results about "Oxide passivation" patented technology

The invention provides passivated perfluoroether elastomer rubber as well as a preparation method and application thereof. The passivated perfluoroether elastomer rubber is prepared by sputtering an yttrium oxide passivation layer on the surface of perfluoroether elastomer rubber. The preparation method comprises the following steps: placing the perfluoroether elastomer rubber in a vacuum sputtering cavity, and carrying out sputtering treatment by adopting an yttrium target material to form an yttrium oxide passivation layer with the thickness of 10-100 nm so as to obtain passivated perfluoroether elastomer rubber; and carrying out annealing treatment on the passivated perfluoroether elastomer rubber to eliminate surface stress, and then cleaning and drying for later use. The passivated perfluoroether elastomer rubber is applied to the etching process in the semiconductor manufacturing process, the plasma etching resistance of a perfluoroether elastomer rubber product can be effectively improved by sputtering the yttrium oxide passivation layer, and meanwhile the lubricating performance of the perfluoroether elastomer rubber product is improved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention provides a preparation method of an aluminum oxide passivation layer, the aluminum oxide passivation layer and a TBC battery, and relates to the technical field of solar batteries. The preparation method of the aluminum oxide passivation layer comprises the following steps: introducing a mixed gas of chlorine dioxide, hydrogen chloride and hypochlorous acid into the silicon substrate, and carrying out first pretreatment; introducing mixed gas of hydrogen and argon, and carrying out secondary pretreatment; introducing mixed gas of nitrogen, oxygen and water vapor, and carrying out third pretreatment; and after the pretreatment is completed, depositing an aluminum oxide passivation layer on the silicon substrate. According to the preparation method, the problem that in the prior art, aluminum oxide is directly deposited on a silicon substrate after texturing, and the fitting degree of aluminum oxide and the textured surface is poor due to poor uniformity of a natural oxide layer is solved, the passivation performance of the prepared aluminum oxide passivation layer is effectively improved, and therefore the open voltage and the conversion efficiency of a TBC battery prepared from the aluminum oxide passivation layer are remarkably improved.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention discloses an HBC structure and a preparation method, and belongs to a preparation method in the technical field of batteries, and the technical scheme is as follows: carrying out alkali texturing treatment on the front and back surfaces of an N-type silicon wafer; a plate-type ALD mode is adopted for deposition treatment; forming a silicon nitride passivation layer structure on the aluminum oxide passivation layer; polishing treatment and deposition treatment; carrying out silicon nitride film removal treatment, and cleaning the laser damage layer after the film removal treatment; carrying out intrinsic silicon deposition treatment by adopting a CVD (chemical vapor deposition) mode; cleaning the intrinsic silicon and the doped intrinsic silicon layer above the N-region silicon nitride layer through an alkali washing tank; depositing intrinsic silicon and phosphorus-doped intrinsic silicon; removing intrinsic silicon and phosphorus-doped intrinsic silicon, removing the mask layer structure by adopting an ink remover, and depositing a transparent oxide layer TCO; tCO separation and electrode preparation are carried out on the GAP area of the N-type silicon wafer; according to the HBC structure and the preparation method provided by the invention, the conversion efficiency is improved, chemical tank cleaning is omitted, the equipment cost is reduced, and the productivity is greatly improved.

The invention relates to the field of solar cells, particularly provides a tunneling oxide layer passivation contact cell and a preparation method thereof, and aims to solve the problem that the open-circuit voltage of the cell is difficult to increase due to higher surface recombination of the cell. In order to achieve the purpose, the tunneling oxide layer passivation contact cell comprises a silicon substrate which is provided with a light receiving surface and a backlight surface, and the light receiving surface is provided with first metal contact areas and first non-metal contact areas which are alternately distributed; a P-type doped layer, a first passivation layer, a first antireflection layer and a front metal electrode are sequentially distributed in the first metal contact region in the direction away from the silicon substrate; a second passivation layer and a second antireflection layer are sequentially distributed on the first non-metal contact region in the direction away from the silicon substrate. According to the invention, a P-type doping layer is omitted in the first non-metal contact region, and the silicon substrate is passivated by directly using the second passivation layer and the second antireflection layer, so that the surface recombination can be reduced after passivation, and the open-circuit voltage of the cell is improved.

The invention relates to a solar cell and a preparation method of the solar cell. The solar cell comprises a substrate, a tunneling oxidation passivation structure, an intrinsic amorphous silicon layer, a first passivation layer, a first transparent conductive structure and a first electrode. The substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface comprises first areas and second areas which are alternately arranged; the first region comprises an electrode region and a non-electrode region; the tunneling oxidation passivation structure is arranged in the first region; the intrinsic amorphous silicon layer is arranged in the non-electrode area; the first passivation layer is arranged in a non-electrode region on one side, deviating from the tunneling oxidation passivation structure, of the intrinsic amorphous silicon layer; the first transparent conductive structure covers the first passivation layer and the tunneling oxidation passivation structure located in the electrode region, and the thickness of the first transparent conductive structure located in the electrode region is smaller than that of the first transparent conductive structure located in the non-electrode region; the first electrode is arranged in the electrode area. According to the invention, the intrinsic amorphous silicon layer and the first passivation layer can be protected through the first transparent conductive structure, so that the first passivation layer is not easy to damage.

This application relates to a tunneling oxide passivation contact structure and its fabrication method, as well as a solar cell. The tunneling oxide passivation contact structure includes a first tunneling oxide passivation contact structure and at least one second tunneling oxide passivation contact structure stacked on the surface of the first tunneling oxide passivation contact structure. The first tunneling oxide passivation contact structure includes a first tunneling oxide layer and a first doped polycrystalline silicon layer stacked together. The second tunneling oxide passivation contact structure includes a second tunneling oxide layer and a second doped polycrystalline silicon layer stacked together. The second tunneling oxide layer includes doped polycrystalline silicon particles, and doped atoms are enriched in the doped polycrystalline silicon particles. The tunneling oxide passivation contact structure described in this application can promote carrier collection and reduce the carrier transport resistance in the tunneling layer, thereby significantly increasing the current.

The application discloses a preparation method of a metal oxide passivation film on a gallium nitride surface; the method comprises the following steps: mixing a metal nitrate precursor solution and a hole sacrificial agent to obtain a mixed solution; placing a substrate containing a GaN layer into the mixed solution and performing photochemical deposition under ultraviolet light to obtain a metal oxide passivation film formed on the surface of the GaN layer. The preparation method uses a metal nitrate as a precursor, and under ultraviolet light, photo-generated electrons and holes of the GaN are used to initiate a redox reaction at a solid / liquid interface to form a uniform and dense metal oxide passivation film. The method is simple in process, is performed at room temperature, does not need vacuum, has small interface damage, can be used to reduce the trap state density of the GaN surface, improve the interface stability and reliability of a device, and is suitable for surface / interface passivation treatment of power electronic and ultraviolet photoelectric devices.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

The application discloses a flexible self-powered day-blind ultraviolet detector based on gallium oxide and a preparation method thereof, which is specially designed for efficient and low-power-consumption ultraviolet light detection in a complex environment. The detector is characterized by asymmetric electrodes and an aluminum oxide passivation layer. Specifically, the first metal electrode and the second metal electrode are located on the gallium oxide film, and the two electrodes can form Schottky and ohmic contacts respectively through different processes and patterned passivation layers by virtue of the difference in material and size, thereby effectively improving photoelectric performance. The first metal electrode realizes high-quality ohmic contact through increasing the contact area, material selection and annealing process. The second metal electrode realizes Schottky contact and improves the contact barrier through material selection and introduction of the passivation layer. The asymmetric electrode design can enhance the built-in electric field and effectively realize the separation of photo-generated carriers, thereby better realizing self-power supply.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

A planar diode with high surge capacity and a preparation method thereof. Relate to a semiconductor device. It comprises a substrate, a P+ substrate region diffused from the top of the substrate, located in the substrate, the top of the substrate is provided with an annular notch near the edge, an arc-shaped shoulder is provided between the annular notch and the top surface of the P+ substrate region, and an oxide passivation film is provided on the arc-shaped shoulder and connected with the substrate and the P+ substrate region respectively, the top surface and the bottom surface of the planar diode are respectively provided with a metal layer. The metal layer comprises an upper metal layer provided on the oxide passivation film and connected with the P+ substrate region in the middle, and a lower metal layer provided at the bottom of the substrate. The application effectively avoids avalanche at the edge of the planar diode chip first, improves the surge capacity and reliability of the diode, and improves the product quality.

This invention belongs to the field of solar cell technology and relates to a method for producing a tunneling oxide passivated contact solar cell. This invention improves light absorption efficiency and ensures smooth current flow by sequentially texturing, P-type diffusion, and etching a silicon wafer. An aluminum oxide passivation layer is deposited on the front side of the etched silicon wafer. A silicon oxide film is prepared on the front aluminum oxide passivation layer and the back side of the silicon wafer, and a doped amorphous silicon film is deposited on the silicon oxide film. The amorphous silicon film deposited on the silicon wafer is annealed to crystallize it, forming a polycrystalline silicon structure. A silicon nitride film is deposited on the back amorphous silicon layer as an antireflection layer and protective layer, which reduces light reflection on the cell surface and improves light absorption efficiency. Metal grid lines are printed on the front and back sides of the silicon wafer, and the silicon wafer with the printed metal grid lines is placed in a high-temperature furnace for sintering to obtain a tunneling oxide passivated contact solar cell.

This invention provides a high-temperature resistant and corrosion-resistant composite film for use in liquid metal environments and its preparation method. The high-temperature resistant and corrosion-resistant composite film comprises an inner passivation layer, an intermediate barrier layer, and an outer functional layer sequentially fixed to the surface of a metal substrate. The inner passivation layer is an oxide; the intermediate barrier layer is an amorphous material; and the outer functional layer is a ceramic material. This invention ensures adhesion through the oxide passivation layer, blocks diffusion through the amorphous barrier layer, and provides stability and self-healing properties through the ceramic material functional layer. Through the synergistic effect of these three layers, it protects structural materials in contact with liquid metals, extends equipment life, and improves system safety and economy, solving the problems of poor protection and performance degradation inherent in traditional single-coating systems.

The invention discloses silver-tungsten double-shell copper-clad powder, a preparation method thereof and conductive paste. The powder sequentially comprises a copper core, a compact inner tungsten shell and an outer silver shell from inside to outside, wherein the compact inner tungsten shell and the outer silver shell are formed through atomic layer deposition (ALD). The thickness of the inner tungsten shell layer is 1-10 nm, and the thickness of the outer silver shell layer is 10-100 nm. The preparation method comprises the steps of copper powder pretreatment, inner tungsten shell layer deposition, surface activation, outer silver shell layer deposition, cleaning, drying and the like. The high melting point of tungsten and the thermal expansion coefficient similar to that of copper are utilized, and the problem that when traditional silver-coated copper powder is sintered at the high temperature of 300 DEG C or above, dehumidification and oxidation are prone to occurring, and consequently conductivity is deteriorated is effectively solved. Conductive paste prepared from the powder can be widely applied to electrode manufacturing of tunneling oxide layer passivation contact, heterojunction or back contact and other efficient solar cells, and has high oxidation resistance, low cost and excellent temperature resistance.

This invention provides a laser-induced bifacial localized tunneling oxide passivation solar cell and its fabrication method, comprising a silicon wafer substrate, front / back silicon nitride layers, and front / back metal electrodes. On the front side of the silicon wafer substrate, a front tunneling oxide layer and a p+poly layer are sequentially disposed from the inside out, with a front LIO etched groove array formed on the surface of the p+poly layer. On the back side, a back tunneling oxide layer and an n+poly layer are sequentially disposed from the inside out, with a back LIO etched groove array formed on the surface of the n+poly layer. This invention utilizes LIO technology to remove poly in the non-gateway p+poly region on the front side of the cell. A TOPCon passivation structure can also be used on the front side with a simple process, significantly improving the open-circuit voltage Voc. Furthermore, LIO technology is used again to thin the poly in the non-gateway n+poly region on the back side of the cell, reducing parasitic light absorption, increasing the short-circuit current Isc, and improving cell efficiency.

The application provides a surface passivation treatment method for optimizing a tunneling oxide passivation battery, which comprises the following steps: in a BOE cleaning step, placing an annealed silicon wafer into a mixed solution of a tank cleaning device, cleaning the silicon wafer in the mixed solution for more than 120s, taking out the silicon wafer and cleaning the silicon wafer with sufficient DIW, then placing the silicon wafer into an acid solution, taking out the silicon wafer and cleaning the silicon wafer with a large amount of DIW, and bubbling in the cleaning process, and finally passivating the surface of the silicon wafer by using an (NH4)2S solution; and in a reflection reduction film manufacturing step, the reflection reduction film is divided into three layers for preparation. The application utilizes sulfur passivation of the P-type emitter of the battery, assists accumulation of negative charges of aluminum oxide to enhance the field passivation effect, passivates the silicon surface dangling bond, releases the process window reduction caused by the accumulation of [H] source for hydrogen passivation in the preparation process of silicon nitride, and reduces the performance attenuation caused by the escape of [H] in the long-term use of the battery assembly.

The invention discloses a novel TOPCon battery preparation process and device, and relates to the technical field of battery processing, and the novel TOPCon battery preparation process comprises the following steps: S1, preparing a sheet; s2, scribing: segmenting the whole cell by using laser; s3, side face polishing is conducted, specifically, chain type etching and alkali washing are conducted on the cutting face, and the cutting face is corroded at the temperature of 30-60 DEG C through 10-30% of TMAH and 5-20% of IPA aqueous solution; s4, edge passivation is conducted, specifically, an aluminum oxide passivation film of 20-50 nm is deposited in an atomic layer deposition mode, and annealing is conducted for 30-60 min at the temperature of 250-300 DEG C; and S5, IV testing: testing the appearance, IV and EL performance of the battery piece, and then grading. Preferably, the flaking process comprises the steps of texturing and boron diffusion. According to the invention, a battery panel is driven to move in a manner of carrying liquid through a roller, and silicon, silicon nitride and silicon oxide on a cut surface of the battery can be corroded and polished by using a TMAH + IPA solution and an HF solution.

The utility model provides a solar cell and a photovoltaic assembly. The solar cell comprises a silicon substrate, the silicon substrate comprises a first surface and a second surface which are arranged oppositely, the first surface is a light receiving surface, and the second surface is a backlight surface; a plurality of tunneling oxide layer passivation contact structures are arranged on the second surface at intervals, and each tunneling oxide layer passivation contact structure is used for being connected with a back electrode; each tunneling oxide layer passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are stacked; wherein the tunneling oxide layer is close to the second surface. According to the solar cell provided by the embodiment of the utility model, the plurality of tunneling oxide layer passivation contact structures are arranged on the second surface at intervals, so that the area of the doped polycrystalline silicon layer is reduced, and the efficiency of the cell can be further improved.

The application relates to the technical field of batteries, in particular to a TOPCon solar cell structure and a preparation method thereof. The main body is an N-type silicon substrate. A boron diffusion doped region, an aluminum oxide passivation layer, a silicon nitride anti-reflection layer and an electrode are arranged on the front surface. The back surface is sequentially provided with a first tunneling oxide layer SiOx1 and a lightly doped poly-Si(n+)1. A second tunneling oxide layer SiOx2, a heavily doped poly-Si(n+)2 and a laser oxidation mask are arranged above the contact area. After alkali washing, the non-contact area poly-Si(n+)2 is removed, and the contact area double-layer poly (SiOx1 / poly-Si(n+)1 / SiOx2 / poly-Si(n+)2) is reserved, so that the contact resistance is reduced and the silver paste is prevented from being burnt through. The non-contact area is only provided with the lightly doped poly-Si(n+)1, and the parasitic absorption is reduced.

Systems and methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. For example, the methods use: (a) ultra-violet (UV) photolysis of peroxide oxidizers to create oxidizing radicals, which limit oxidation of the molybdenum surface and provide quasi-self-limiting oxidation behavior, (b) steric hinderance of oxidizers having large reactant molecules to achieve better self-limiting oxidation behavior, and / or (c) ligand-assisted oxidation to change the surface chemistry of the molybdenum oxide passivation layer and ensure self-limiting oxidation behavior. After forming the molybdenum oxide passivation layer using one or more of the oxidation techniques disclosed herein, the passivation layer is selectively removed in a dissolution step of the wet ALE process to etch the molybdenum surface.

The application relates to a solar cell and a preparation method thereof, which comprises a substrate, a tunneling oxide passivation structure, an intrinsic amorphous silicon layer, a first passivation layer, a first transparent conductive structure and a first electrode. The substrate comprises a first surface and a second surface arranged oppositely, and the first surface comprises first areas and second areas arranged alternately; the first areas comprise electrode areas and non-electrode areas; the tunneling oxide passivation structure is arranged in the first areas; the intrinsic amorphous silicon layer is arranged in the non-electrode areas; the first passivation layer is arranged in the non-electrode areas on the side of the intrinsic amorphous silicon layer away from the tunneling oxide passivation structure; the first transparent conductive structure covers the first passivation layer and the tunneling oxide passivation structure in the electrode areas, and the thickness of the first transparent conductive structure in the electrode areas is smaller than that of the first transparent conductive structure in the non-electrode areas; and the first electrode is arranged in the electrode areas. The application can protect the intrinsic amorphous silicon layer and the first passivation layer through the first transparent conductive structure, so that the first passivation layer is not easy to be damaged.

The invention discloses a preparation method of a TBC solar cell. The preparation method comprises the following steps: alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer; carrying out boron diffusion conversion to obtain P-type polycrystalline silicon; laser patterning is prepared for N region deposition; acid pickling and alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer again; carrying out phosphorus diffusion conversion to obtain N-type polycrystalline silicon; removing PSG from the front side; patterning to expose the N-type polycrystalline silicon region; performing alkali texturing treatment to form a pyramid structure, and performing rounding treatment; pickling the back surface and reserving the polycrystalline silicon layer; depositing an aluminum oxide passivation layer and a silicon nitride passivation layer on two sides; laser trepanning is carried out to expose the P-type polycrystalline silicon region and the N-type polycrystalline silicon region; metallizing to form a precise electrode; and performing light injection to obtain the TBC solar cell. According to the TBC solar cell provided by the invention, BSGamp; the PSG is used as a mask, and the laser patterning / corrosion slurry is used for replacing photoetching and other mask materials, so that the compatibility with the existing TOPCON production line is high.

This invention relates to the field of photovoltaic device manufacturing, and in particular to a novel TOPCON cell and its fabrication method. The method involves sequentially depositing silicon oxide and polycrystalline silicon layers on the front and back sides of a grooved n-type substrate silicon to obtain a silicon wafer to be doped, followed by double-sided doping. The polycrystalline silicon layer and silicon oxide layer in the non-SE region of the front side of the doped silicon wafer are then removed to obtain a cell pre-mount. The pre-mount is cleaned to remove glass transition silicon. An aluminum oxide passivation layer is deposited on the front side of the pre-mount after glass transition silicon removal. A front-side silicon nitride layer is deposited on the surface of the aluminum oxide passivation layer, and a back-side silicon nitride layer is deposited on the surface of the polycrystalline silicon on the back side to obtain a photovoltaic silicon wafer. The photovoltaic silicon wafer is then surface-metallized to obtain the novel TOPCON cell. This invention increases the contact area between the front-side silicon oxide layer and the front-side polycrystalline silicon layer and the n-type substrate silicon, thereby improving the short-circuit current and fill factor of the cell.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

This invention discloses a negative electrode for a zinc-air battery, its preparation method, and its application. The negative electrode of the zinc-air battery includes a current collector and a negative electrode coating disposed on the surface of the current collector; the negative electrode coating includes a zinc-based material, a binder, and liquid metal. The negative electrode of the zinc-air battery proposed in this invention can effectively alleviate the uneven deposition of zinc in the negative electrode of the zinc-air battery, thereby effectively avoiding the formation of zinc dendrites, and can also effectively avoid the formation of a zinc oxide passivation layer (which lacks electrochemical activity) and the occurrence of hydrogen evolution side reactions. This invention also provides a method for preparing the above-mentioned negative electrode and its application.

The invention provides a crystalline silicon solar cell ozone gas passivation process which comprises the following process steps: S1, providing passivation equipment which comprises a control cabinet, an ozone generator is arranged in the control cabinet, the output end of the ozone generator is connected with a passivation tank through a second pipeline, and an ozone concentration detector is arranged on the second pipeline and in front of the passivation tank; the second pipeline is communicated with an annular uniform flow pipe in the passivation tank; the passivation tank is connected with the heating device through a fourth pipeline; s2, moving the cleaned silicon wafer into a passivation tank; s3, hot air and ozone are controlled to be supplied into the passivation tank through the control cabinet at the same time; and S4, taking out the passivated silicon wafer from the passivation tank, and carrying out the next treatment process. According to the silicon wafer passivation process, the ozone gas is introduced while the silicon wafer is dried after being cleaned, and the oxide layer is grown on the surface of the silicon wafer, so that the production process can be simplified, the uniformity and consistency of the oxide passivation layer on the surface of the silicon wafer can be considered, and the production efficiency is improved.

To provide a solar cell in which the conversion efficiency does not decrease even if the shapes of different regions of the cross section differ greatly. [Solution] The substrate includes opposing first and second surfaces and a side surface connecting the first and second surfaces. The side surface includes a cut surface including a cutting edge adjacent to the first surface and a breaking edge adjacent to the second surface, and a first passivation layer 4 formed on the cut surface, the first passivation layer 4 including an aluminum oxide passivation layer. The cut surface includes a first region adjacent to the cut edge and a second region farther from the cut edge than the first region, and the ratio of oxygen to aluminum in at least a portion of the second passivation layer 5 covering the first region is greater than the ratio of oxygen to aluminum in at least a portion of the second region.

The present application relates to the technical field of solar cells. Disclosed are a solar cell and a photovoltaic module, so as to solve the problem of different regions of a cut face of a shingled solar cell varying significantly in terms of morphology, leading to a reduction in the efficiency of the solar cell. The solar cell comprises a first face and a second face opposite each other, and a side surface connecting the first face and the second face. The side face comprises: a cut face, the cut face comprising a cut edge adjacent to the first face and a fractured edge adjacent to the second face; and a first passivation layer formed on the cut face, the first passivation layer comprising an aluminum oxide passivation layer. The cut face comprises a first region adjacent to the cut edge and a second region farther away from the cut edge than the first region, with the ratio of oxygen to aluminum in at least part of the first region being greater than the ratio of oxygen to aluminum in at least part of the second region.