102 results about "Oxide passivation" patented technology

A nanocarbide precipitation strengthened ultrahigh-strength, corrosion resistant, structural steel possesses a combination of strength and corrosion resistance comprising in combination, by weight, about: 0.1 to 0.3% carbon (C), 8 to 17% cobalt (Co), 0 to 5% nickel (Ni), 6 to 12% chromium (Cr), less than 1% silicon (Si), less than 0.5% manganese (Mn), and less than 0.15% copper (Cu), with additives selected from the group comprising about: less than 3% molybdenum (Mo), less than 0.3% niobium (Nb), less than 0.8% vanadium (V), less than 0.2% tantalum (Ta), less than 3% tungsten (W), and combinations thereof, with additional additives selected from the group comprising about: less than 0.2% titanium (Ti), less than 0.2% lanthanum (La) or other rare earth elements, less than 0.15% zirconium (Zr), less than 0.005% boron (B), and combinations thereof, impurities of less than about: 0.02% sulfur (S), 0.012% phosphorus (P), 0.015% oxygen (O) and 0.015% nitrogen (N), the remainder substantially iron (Fe), incidental elements and other impurities. The alloy is strengthened by nanometer scale M2C carbides within a fine lath martensite matrix from which enhanced chemical partitioning of Cr to the surface provides a stable oxide passivating film for corrosion resistance. The alloy, with a UTS in excess of 280 ksi, is useful for applications such as aircraft landing gear, machinery and tools used in hostile environments, and other applications wherein ultrahigh-strength, corrosion resistant, structural steel alloys are desired.

In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

A metal alloy which when oxidized forms a highly conductive surface oxide layer. Alloy compositions such as, but not limited to, Ti—Nb, Ti—Ta, La—Sr—Cr, and La—Sr—Co are known to form oxide passivation layers which are highly conductive. Such alloys are useful in electrical contact apparatus. An electrical contact element formed of the alloy has a contact surface which when oxidized forms a highly conductive surface layer, thus maintaining electrical conductivity and continuity through the element. The oxide layer may be formed in situ after assembly of the electrical contact or may be provided in an oxidative step during manufacture. The electrical contact may be formed entirely of one or more of such alloys; or may be formed of an inexpensive substrate base metal, such as steel, having one or more of the alloys coated thereupon; or may be formed of a mixture of the base metal and the alloy.

The invention discloses a p-type local back surface field passivation double-sided solar cell and a preparation process thereof, and relates to the technical field of solar cells. The solar cell comprises a p-type silicon substrate, wherein the bottom of the p-type silicon substrate is provided with a silicon oxide passivation layer, an aluminum oxide passivation layer and a back silicon nitride antireflection layer from top to bottom, the bottom of the p-type silicon substrate is embedded with a plurality of strips of a boron source doped layer, and the bottom of the boron source doping layeris connected with a back metal electrode layer which simultaneously penetrates through the silicon oxide passivation layer, the aluminum oxide passivation layer and the back silicon nitride antireflection layer. During the preparation, a plurality of local slots are formed in the lower surface of the back silicon nitride antireflection layer by using laser, the local slots are formed to the bottom of the p-type silicon substrate, the slotted area is printed with boron source slurry to form a high-low junction structure, the open-circuit voltage of the back cell of the double-sided solar cellis improved, the slotted boron source slurry heavily-doped area is in contact with a metal electrode to form ohmic contact, the series resistance is reduced, the filling factor is improved, and the double-sided rate of the cell is improved under the condition of not reducing the front efficiency.

The invention discloses high-reliability PERC back silver conductive paste for a crystalline silicon solar cell and a preparation process for the high-reliability PERC back silver conductive paste. The viscosity of the slurry is 20 to 80 Pa.S, and the paste contains the following components in percentage by mass: 0.1%-0.3% of an inorganic additive, 1%-5% of glass powder, 45%-65% of silver powder,2%-6% of ethyl cellulose, 1%-5% of terpilenol, 20%-35% of texanol ester alcohol and a proper amount of an organic additive, wherein the glass powder is formed by the mixing of glass powder I and glasspowder II. The preparation method comprises the following steps: uniformly mixing the organic additive, ethyl cellulose, terpilenol and texanol ester alcohol under the water bath condition to obtaina carrier; adding the mixed glass system and the inorganic additive into the carrier, and uniformly mixing the mixture; and adding the silver powder system into the system at the step 2, and performing uniform mixing, rolling and filtering to obtain the back conductive silver paste. According to the invention, the PERC back silver paste guarantees the characteristics of the traditional non-contactsilver paste, is fewer in damages to an aluminum oxide passivation layer, is high in welding reliability of a back silver paste sintered electrode due to the fact that a mixed glass system is adopted, and has excellent comprehensive performances under the condition that the actual temperature is 740 DEG C-780 DEG C.

The invention discloses a molybdenite whole-wet method decomposition method. The molybdenite, the chloride electrolyte and the water are added into a membraneless electrobath with an ultrasonic generator and are stirred to prepare the ore pulp with the ore pulp mass percentage ranging from 5 to 80 percent and the chloride electrolyte mass percentage ranging from 5 to 50 percent, the mixture is electrolyzed and oxidized under the action of ultrasonic and at a temperature ranging from 0 to 100 DEG C, in the electroanalysis process, the current density of the anode is controlled to be 50 to 1200 A / m<2>, the ultrasonic is emitted continuously or intermittently, the electrolyzed and oxidized molybdenite is converted into the molybdena or molybdate compound. By the ultrasonic field and the electric field coupling action, the method reinforces the wet method decomposition process of the molybdenite, overcomes the retardation of the oxide passive film generated in the oxidization leaching process of the conventional wet method, and improves the current efficiency and the Mo leaching rate of the prior membraneless electrooxidation leaching technique.

The invention belongs to the technical field of crystalline silicon solar cells, and relates to a front grid line passivation contact-basedPERC solar cell and a preparation method thereof. The solar cell comprises a P type monocrystalline silicon substrate; a back aluminum oxide passivation layer and a back silicon nitride passivation layer are sequentially arranged on the back surface of the P type monocrystalline silicon substrate from inside to outside. A front silicon oxide passivation layer and a front silicon nitride passivation layer are sequentially arranged on the front face of the Ptype monocrystalline silicon substrate from inside to outside; a front metal silver grid line penetrating through the front silicon oxide passivation layer and the front silicon nitride passivation layer is arranged on the front face of the P type monocrystalline silicon substrate. An ultrathin tunneling silicon oxide layer and a phosphorus-doped polycrystalline silicon layer are sequentially arranged on the front face of the P type monocrystalline silicon substrate and located below the front face metal silver grid line from inside to outside. According to the solar cell and preparation method thereof of the invention, the open-circuit voltage of the cell can be improved, the carrier recombination of a metal contact region can be reduced, the parasitic absorption of the doped polycrystalline silicon layer to light can be reduced, the current loss can be reduced, and the efficiency of the PERC cell can be improved.

The invention belongs to the technical field of crystalline silicon solar cells, and relates to a P-type crystalline silicon solar cell with tunneling passivation and a preparation method thereof. Thesolar cell comprises a P-type substrate, and is characterized in that a selective emitter, an ultrathin tunneling silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a front silicon oxide passivation layer and a front silicon nitride passivation layer are sequentially arranged on the front face of the P-type substrate from inside to outside, and a back aluminum oxide passivation layer and a back silicon nitride silicification layer are sequentially arranged on the back face of the P-type substrate from inside to outside; A front metal silver grid line is arranged on the front silicon nitride passivation layer, a back metal aluminum grid line is arranged on the back face of the P-type substrate, and the back metal aluminum grid line penetrates through the back aluminum oxide passivation layer and the back silicon nitride silicification layer. The structure is very thin, the problem of light absorption of the silicon wafer is solved, the surface recombination rate ofthe cell is effectively reduced, the front passivation of the cell is improved, and the performance of the cell is improved.

The invention discloses an oxide passivation contact solar cell and a preparation method thereof. The cell has the following structure from top to bottom: Ag / ITO / NiOx:Mg / SiOx / n-c-Si / SiOx / TiOx / Ag. Thepreparation method comprises the following steps of putting a cleaned silicon wafer into a HNO3 solution for thermal oxidation growth, growing a magnesium-doped nickel oxide thin film by utilizing a magnetron sputtering method, and growing a titanium oxide thin film by a magnetron sputtering method; dividing the silicon wafer into a sample with the area of 1.5*1.5cm2 by utilizing a laser scribingtechnology, and then growing an ITO transparent conductive thin film and a metal silver electrode by a magnetron sputtering method; and naturally cooling the manufactured cell to room temperature after annealing. The method does not need expensive thin film deposition equipment such as plasma chemical vapor deposition (PECVD) or atomic layer deposition (ALD), and has the characteristics of simpleprocess, low cost, environmental friendliness and the like.

The current invention provides for an electric double layer capacitor which can be manufactured with low manufacturing cost, and an increase of internal resistance due to the damage of a cathode current collector by reflow is inhibited. For this reason, in the current invention, the electric double layer capacitor comprising a cathode 1a, anode 1b, a separator 1c to separate said cathode 1a and anode 1b, electrolytic solution 7 and a container 10 to house said cathode 1a, anode 1b, separator 1c and electrolytic solution 7, wherein said cathode 1a is electrically connected to cathode current collector 2, and said cathode current collector 2 is comprised of alloy of a metal element showing an oxide passivation phenomenon and aluminum.