101 results about "Oxide passivation" patented technology

The invention relates to the technical field of solar cells, in particular to a film layer structure for improving UV attenuation of a TOPcon cell. In order to improve the passivation effect of the front face of the TOPCon cell, an aluminum oxide passivation layer is generally arranged on the surface of a BSG layer on the front face of the TOPCon cell, but the aluminum oxide passivation layer is poor in ultraviolet resistance and prone to being damaged by ultraviolet light, and then the service life of the cell is affected. Aiming at the problem, the invention provides the film layer structure for improving UV attenuation of the TOPcon battery, the second silicon oxide layer and the first silicon oxide layer are respectively arranged above and below the aluminum oxide layer, and the silicon nitride layer is arranged on the surface of the second silicon oxide layer, so that the passivation effect of the front surface of the obtained TOPcon battery is remarkably improved, the attenuation speed of the battery is effectively reduced, and the service life of the battery is prolonged. And the service life of the battery is prolonged.

The invention provides passivated perfluoroether elastomer rubber as well as a preparation method and application thereof. The passivated perfluoroether elastomer rubber is prepared by sputtering an yttrium oxide passivation layer on the surface of perfluoroether elastomer rubber. The preparation method comprises the following steps: placing the perfluoroether elastomer rubber in a vacuum sputtering cavity, and carrying out sputtering treatment by adopting an yttrium target material to form an yttrium oxide passivation layer with the thickness of 10-100 nm so as to obtain passivated perfluoroether elastomer rubber; and carrying out annealing treatment on the passivated perfluoroether elastomer rubber to eliminate surface stress, and then cleaning and drying for later use. The passivated perfluoroether elastomer rubber is applied to the etching process in the semiconductor manufacturing process, the plasma etching resistance of a perfluoroether elastomer rubber product can be effectively improved by sputtering the yttrium oxide passivation layer, and meanwhile the lubricating performance of the perfluoroether elastomer rubber product is improved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The present disclosure provides an ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1nm to 4nm, and the percentage content of N atoms in the SiON film is 1% to 40%. The ultrathin silicon oxynitride interface material of the present disclosure has the characteristics of high nitrogen content. Compared with silicon oxide, the diffusion rate of boron in the SiON film is low, which effectively reduces the damaging effect of boron on the SiON film, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride and has a small valence band offset, which helps hole transport, increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

The invention provides a preparation method of an aluminum oxide passivation layer, the aluminum oxide passivation layer and a TBC battery, and relates to the technical field of solar batteries. The preparation method of the aluminum oxide passivation layer comprises the following steps: introducing a mixed gas of chlorine dioxide, hydrogen chloride and hypochlorous acid into the silicon substrate, and carrying out first pretreatment; introducing mixed gas of hydrogen and argon, and carrying out secondary pretreatment; introducing mixed gas of nitrogen, oxygen and water vapor, and carrying out third pretreatment; and after the pretreatment is completed, depositing an aluminum oxide passivation layer on the silicon substrate. According to the preparation method, the problem that in the prior art, aluminum oxide is directly deposited on a silicon substrate after texturing, and the fitting degree of aluminum oxide and the textured surface is poor due to poor uniformity of a natural oxide layer is solved, the passivation performance of the prepared aluminum oxide passivation layer is effectively improved, and therefore the open voltage and the conversion efficiency of a TBC battery prepared from the aluminum oxide passivation layer are remarkably improved.

The topcon battery comprises an n-type silicon substrate, and a P-type emitting electrode, a first tunneling oxide layer, a local POLY layer, a first aluminum oxide passivation layer, a first silicon oxide layer, a first silicon oxynitride layer, a silicon nitride anti-reflection layer and a first silk-screen printing layer are sequentially arranged on the front face of the n-type silicon substrate. And a second tunneling oxide layer, a POLY layer, a second aluminum oxide passivation layer, a second silicon dioxide layer, a second silicon oxynitride layer, a third silicon nitride layer and a second silk-screen printing layer are sequentially arranged on the back surface. According to the invention, optimization is carried out by adopting a film layer superposition passivation principle, and the TOPCon efficiency and reliability are improved.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention discloses a flexible self-powered solar-blind ultraviolet detector based on gallium oxide and a preparation method thereof. The flexible self-powered solar-blind ultraviolet detector is specially designed to be used for efficient and low-power-consumption ultraviolet light detection in a complex environment. The detector is characterized by the design of the asymmetric electrode and the aluminum oxide passivation layer. The device specifically comprises a first metal electrode and a second metal electrode which are located on a gallium oxide thin film and can respectively form Schottky contact and ohmic contact through different technological processes and a patterned passivation layer according to different materials and sizes of the first metal electrode and the second metal electrode, so that the photoelectric property is effectively improved. The first metal electrode realizes high-quality ohmic contact by increasing the contact area, selecting materials and adopting an annealing process. And the second metal electrode realizes Schottky contact and improves the contact barrier through material selection and introduction of a passivation layer. The asymmetric electrode design can enhance a built-in electric field and effectively realize separation of photon-generated carriers, so that self power supply is better realized.

The invention discloses an HBC structure and a preparation method, and belongs to a preparation method in the technical field of batteries, and the technical scheme is as follows: carrying out alkali texturing treatment on the front and back surfaces of an N-type silicon wafer; a plate-type ALD mode is adopted for deposition treatment; forming a silicon nitride passivation layer structure on the aluminum oxide passivation layer; polishing treatment and deposition treatment; carrying out silicon nitride film removal treatment, and cleaning the laser damage layer after the film removal treatment; carrying out intrinsic silicon deposition treatment by adopting a CVD (chemical vapor deposition) mode; cleaning the intrinsic silicon and the doped intrinsic silicon layer above the N-region silicon nitride layer through an alkali washing tank; depositing intrinsic silicon and phosphorus-doped intrinsic silicon; removing intrinsic silicon and phosphorus-doped intrinsic silicon, removing the mask layer structure by adopting an ink remover, and depositing a transparent oxide layer TCO; tCO separation and electrode preparation are carried out on the GAP area of the N-type silicon wafer; according to the HBC structure and the preparation method provided by the invention, the conversion efficiency is improved, chemical tank cleaning is omitted, the equipment cost is reduced, and the productivity is greatly improved.

The invention relates to the field of solar cells, particularly provides a tunneling oxide layer passivation contact cell and a preparation method thereof, and aims to solve the problem that the open-circuit voltage of the cell is difficult to increase due to higher surface recombination of the cell. In order to achieve the purpose, the tunneling oxide layer passivation contact cell comprises a silicon substrate which is provided with a light receiving surface and a backlight surface, and the light receiving surface is provided with first metal contact areas and first non-metal contact areas which are alternately distributed; a P-type doped layer, a first passivation layer, a first antireflection layer and a front metal electrode are sequentially distributed in the first metal contact region in the direction away from the silicon substrate; a second passivation layer and a second antireflection layer are sequentially distributed on the first non-metal contact region in the direction away from the silicon substrate. According to the invention, a P-type doping layer is omitted in the first non-metal contact region, and the silicon substrate is passivated by directly using the second passivation layer and the second antireflection layer, so that the surface recombination can be reduced after passivation, and the open-circuit voltage of the cell is improved.

The invention relates to a photovoltaic cell and a preparation method thereof, and the method comprises the steps: sequentially forming a plurality of aluminum oxide passivation layers on a substrate through trimethylaluminum, oxygen and water vapor, the ratio of the oxygen flow to the water vapor flow for forming the next aluminum oxide passivation layer is smaller than the ratio of the oxygen flow to the water vapor flow for forming the previous aluminum oxide passivation layer, so that the refractive index of the next formed aluminum oxide passivation layer is smaller than that of the previous formed aluminum oxide passivation layer; the refractive index of the prepared multi-layer aluminum oxide passivation layer is reduced from the side close to the substrate to the side far away from the substrate, so that the prepared multi-layer aluminum oxide passivation layer has a good antireflection effect, and the photoelectric conversion efficiency of the finally prepared photovoltaic cell can be improved.

The invention relates to a solar cell and a preparation method of the solar cell. The solar cell comprises a substrate, a tunneling oxidation passivation structure, an intrinsic amorphous silicon layer, a first passivation layer, a first transparent conductive structure and a first electrode. The substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface comprises first areas and second areas which are alternately arranged; the first region comprises an electrode region and a non-electrode region; the tunneling oxidation passivation structure is arranged in the first region; the intrinsic amorphous silicon layer is arranged in the non-electrode area; the first passivation layer is arranged in a non-electrode region on one side, deviating from the tunneling oxidation passivation structure, of the intrinsic amorphous silicon layer; the first transparent conductive structure covers the first passivation layer and the tunneling oxidation passivation structure located in the electrode region, and the thickness of the first transparent conductive structure located in the electrode region is smaller than that of the first transparent conductive structure located in the non-electrode region; the first electrode is arranged in the electrode area. According to the invention, the intrinsic amorphous silicon layer and the first passivation layer can be protected through the first transparent conductive structure, so that the first passivation layer is not easy to damage.

A layered structure is provided for a solar cell having tunnel-oxide-passivated contacts. The layered structure includes at least one tunnel oxide layer and a μc-SiCx layer, wherein x≥0.5. A solar cell having tunnel-oxide-passivated contacts is also provided. The solar cell includes at least one crystalline n-doped or p-doped silicon layer, and the layered structure having the tunnel-oxide passivated contacts. A method for producing a layered structure for a solar cell having tunnel-oxide-passivated contacts is additionally provided. The method includes providing a substrate layer comprising a silicon layer, depositing a tunnel oxide layer on the substrate layer, and depositing a u c-SiCx:H layer, which is n-doped or p-doped, on the tunnel oxide layer.

This application relates to a tunneling oxide passivation contact structure and its fabrication method, as well as a solar cell. The tunneling oxide passivation contact structure includes a first tunneling oxide passivation contact structure and at least one second tunneling oxide passivation contact structure stacked on the surface of the first tunneling oxide passivation contact structure. The first tunneling oxide passivation contact structure includes a first tunneling oxide layer and a first doped polycrystalline silicon layer stacked together. The second tunneling oxide passivation contact structure includes a second tunneling oxide layer and a second doped polycrystalline silicon layer stacked together. The second tunneling oxide layer includes doped polycrystalline silicon particles, and doped atoms are enriched in the doped polycrystalline silicon particles. The tunneling oxide passivation contact structure described in this application can promote carrier collection and reduce the carrier transport resistance in the tunneling layer, thereby significantly increasing the current.

The application discloses a preparation method of a metal oxide passivation film on a gallium nitride surface; the method comprises the following steps: mixing a metal nitrate precursor solution and a hole sacrificial agent to obtain a mixed solution; placing a substrate containing a GaN layer into the mixed solution and performing photochemical deposition under ultraviolet light to obtain a metal oxide passivation film formed on the surface of the GaN layer. The preparation method uses a metal nitrate as a precursor, and under ultraviolet light, photo-generated electrons and holes of the GaN are used to initiate a redox reaction at a solid / liquid interface to form a uniform and dense metal oxide passivation film. The method is simple in process, is performed at room temperature, does not need vacuum, has small interface damage, can be used to reduce the trap state density of the GaN surface, improve the interface stability and reliability of a device, and is suitable for surface / interface passivation treatment of power electronic and ultraviolet photoelectric devices.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

The application discloses a flexible self-powered day-blind ultraviolet detector based on gallium oxide and a preparation method thereof, which is specially designed for efficient and low-power-consumption ultraviolet light detection in a complex environment. The detector is characterized by asymmetric electrodes and an aluminum oxide passivation layer. Specifically, the first metal electrode and the second metal electrode are located on the gallium oxide film, and the two electrodes can form Schottky and ohmic contacts respectively through different processes and patterned passivation layers by virtue of the difference in material and size, thereby effectively improving photoelectric performance. The first metal electrode realizes high-quality ohmic contact through increasing the contact area, material selection and annealing process. The second metal electrode realizes Schottky contact and improves the contact barrier through material selection and introduction of the passivation layer. The asymmetric electrode design can enhance the built-in electric field and effectively realize the separation of photo-generated carriers, thereby better realizing self-power supply.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

A planar diode with high surge capacity and a preparation method thereof. Relate to a semiconductor device. It comprises a substrate, a P+ substrate region diffused from the top of the substrate, located in the substrate, the top of the substrate is provided with an annular notch near the edge, an arc-shaped shoulder is provided between the annular notch and the top surface of the P+ substrate region, and an oxide passivation film is provided on the arc-shaped shoulder and connected with the substrate and the P+ substrate region respectively, the top surface and the bottom surface of the planar diode are respectively provided with a metal layer. The metal layer comprises an upper metal layer provided on the oxide passivation film and connected with the P+ substrate region in the middle, and a lower metal layer provided at the bottom of the substrate. The application effectively avoids avalanche at the edge of the planar diode chip first, improves the surge capacity and reliability of the diode, and improves the product quality.

This invention belongs to the field of solar cell technology and relates to a method for producing a tunneling oxide passivated contact solar cell. This invention improves light absorption efficiency and ensures smooth current flow by sequentially texturing, P-type diffusion, and etching a silicon wafer. An aluminum oxide passivation layer is deposited on the front side of the etched silicon wafer. A silicon oxide film is prepared on the front aluminum oxide passivation layer and the back side of the silicon wafer, and a doped amorphous silicon film is deposited on the silicon oxide film. The amorphous silicon film deposited on the silicon wafer is annealed to crystallize it, forming a polycrystalline silicon structure. A silicon nitride film is deposited on the back amorphous silicon layer as an antireflection layer and protective layer, which reduces light reflection on the cell surface and improves light absorption efficiency. Metal grid lines are printed on the front and back sides of the silicon wafer, and the silicon wafer with the printed metal grid lines is placed in a high-temperature furnace for sintering to obtain a tunneling oxide passivated contact solar cell.

This invention provides a high-temperature resistant and corrosion-resistant composite film for use in liquid metal environments and its preparation method. The high-temperature resistant and corrosion-resistant composite film comprises an inner passivation layer, an intermediate barrier layer, and an outer functional layer sequentially fixed to the surface of a metal substrate. The inner passivation layer is an oxide; the intermediate barrier layer is an amorphous material; and the outer functional layer is a ceramic material. This invention ensures adhesion through the oxide passivation layer, blocks diffusion through the amorphous barrier layer, and provides stability and self-healing properties through the ceramic material functional layer. Through the synergistic effect of these three layers, it protects structural materials in contact with liquid metals, extends equipment life, and improves system safety and economy, solving the problems of poor protection and performance degradation inherent in traditional single-coating systems.

The invention discloses silver-tungsten double-shell copper-clad powder, a preparation method thereof and conductive paste. The powder sequentially comprises a copper core, a compact inner tungsten shell and an outer silver shell from inside to outside, wherein the compact inner tungsten shell and the outer silver shell are formed through atomic layer deposition (ALD). The thickness of the inner tungsten shell layer is 1-10 nm, and the thickness of the outer silver shell layer is 10-100 nm. The preparation method comprises the steps of copper powder pretreatment, inner tungsten shell layer deposition, surface activation, outer silver shell layer deposition, cleaning, drying and the like. The high melting point of tungsten and the thermal expansion coefficient similar to that of copper are utilized, and the problem that when traditional silver-coated copper powder is sintered at the high temperature of 300 DEG C or above, dehumidification and oxidation are prone to occurring, and consequently conductivity is deteriorated is effectively solved. Conductive paste prepared from the powder can be widely applied to electrode manufacturing of tunneling oxide layer passivation contact, heterojunction or back contact and other efficient solar cells, and has high oxidation resistance, low cost and excellent temperature resistance.

According to the LED chip, the preparation method of the LED chip and the light-emitting equipment provided by the invention, an atomic-scale metal oxide passivation layer is deposited in a conventional nonmetal oxide passivation layer and an interlayer of an LED chip electrode, so that the adhesiveness among the conventional nonmetal oxide passivation layer, the LED chip electrode and the interlayer is improved, and the reliability of the chip is improved; by combining the chemical characteristics of the non-metal oxide passivation layer and the atomic-scale metal oxide passivation layer, the LED chip has the advantages of acid resistance and alkali resistance, and specifically, the risk of chip electrode exposure can be greatly reduced through the LED chip structure.

This invention provides a laser-induced bifacial localized tunneling oxide passivation solar cell and its fabrication method, comprising a silicon wafer substrate, front / back silicon nitride layers, and front / back metal electrodes. On the front side of the silicon wafer substrate, a front tunneling oxide layer and a p+poly layer are sequentially disposed from the inside out, with a front LIO etched groove array formed on the surface of the p+poly layer. On the back side, a back tunneling oxide layer and an n+poly layer are sequentially disposed from the inside out, with a back LIO etched groove array formed on the surface of the n+poly layer. This invention utilizes LIO technology to remove poly in the non-gateway p+poly region on the front side of the cell. A TOPCon passivation structure can also be used on the front side with a simple process, significantly improving the open-circuit voltage Voc. Furthermore, LIO technology is used again to thin the poly in the non-gateway n+poly region on the back side of the cell, reducing parasitic light absorption, increasing the short-circuit current Isc, and improving cell efficiency.

The application provides a surface passivation treatment method for optimizing a tunneling oxide passivation battery, which comprises the following steps: in a BOE cleaning step, placing an annealed silicon wafer into a mixed solution of a tank cleaning device, cleaning the silicon wafer in the mixed solution for more than 120s, taking out the silicon wafer and cleaning the silicon wafer with sufficient DIW, then placing the silicon wafer into an acid solution, taking out the silicon wafer and cleaning the silicon wafer with a large amount of DIW, and bubbling in the cleaning process, and finally passivating the surface of the silicon wafer by using an (NH4)2S solution; and in a reflection reduction film manufacturing step, the reflection reduction film is divided into three layers for preparation. The application utilizes sulfur passivation of the P-type emitter of the battery, assists accumulation of negative charges of aluminum oxide to enhance the field passivation effect, passivates the silicon surface dangling bond, releases the process window reduction caused by the accumulation of [H] source for hydrogen passivation in the preparation process of silicon nitride, and reduces the performance attenuation caused by the escape of [H] in the long-term use of the battery assembly.

The invention discloses a novel TOPCon battery preparation process and device, and relates to the technical field of battery processing, and the novel TOPCon battery preparation process comprises the following steps: S1, preparing a sheet; s2, scribing: segmenting the whole cell by using laser; s3, side face polishing is conducted, specifically, chain type etching and alkali washing are conducted on the cutting face, and the cutting face is corroded at the temperature of 30-60 DEG C through 10-30% of TMAH and 5-20% of IPA aqueous solution; s4, edge passivation is conducted, specifically, an aluminum oxide passivation film of 20-50 nm is deposited in an atomic layer deposition mode, and annealing is conducted for 30-60 min at the temperature of 250-300 DEG C; and S5, IV testing: testing the appearance, IV and EL performance of the battery piece, and then grading. Preferably, the flaking process comprises the steps of texturing and boron diffusion. According to the invention, a battery panel is driven to move in a manner of carrying liquid through a roller, and silicon, silicon nitride and silicon oxide on a cut surface of the battery can be corroded and polished by using a TMAH + IPA solution and an HF solution.

The invention discloses a lithium ion battery aluminum current collector passivation solution and application thereof, and relates to the technical field of lithium ion batteries. The passivation solution comprises the following components: a main film-forming agent is hexafluorozirconic acid; the auxiliary film-forming agent is one, two or three of manganese sulfate, manganese chloride and niobium oxide; the film-forming accelerant is one or two of sodium fluoride or lithium fluoride; the solvent is deionized water; and the pH value of the passivation solution is controlled to be 3.0-6.0. The passivation solution is used for preparing an aluminum current collector surface oxide passivation layer resistant to the corrosion of a sulfonyl imide-based electrolyte in a lithium ion battery. A composite film containing oxide and fluoride is generated on the surface of the aluminum current collector treated by the passivation solution provided by the invention, so that the corrosion resistance and high pressure resistance of the aluminum current collector for the lithium ion battery can be obviously improved.

The utility model provides a solar cell and a photovoltaic assembly. The solar cell comprises a silicon substrate, the silicon substrate comprises a first surface and a second surface which are arranged oppositely, the first surface is a light receiving surface, and the second surface is a backlight surface; a plurality of tunneling oxide layer passivation contact structures are arranged on the second surface at intervals, and each tunneling oxide layer passivation contact structure is used for being connected with a back electrode; each tunneling oxide layer passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are stacked; wherein the tunneling oxide layer is close to the second surface. According to the solar cell provided by the embodiment of the utility model, the plurality of tunneling oxide layer passivation contact structures are arranged on the second surface at intervals, so that the area of the doped polycrystalline silicon layer is reduced, and the efficiency of the cell can be further improved.

The application provides a preparation method of an aluminum oxide passivation layer, the aluminum oxide passivation layer and a TBC battery, and relates to the technical field of solar cells. The preparation method of the aluminum oxide passivation layer comprises the following steps: introducing a mixed gas of chlorine dioxide, hydrogen chloride and hypochlorous acid into a silicon substrate to perform first pretreatment; introducing a mixed gas of hydrogen and argon to perform second pretreatment; introducing a mixed gas of nitrogen, oxygen and water vapor to perform third pretreatment; and depositing the aluminum oxide passivation layer on the silicon substrate after the pretreatment is completed. The preparation method solves the problem that the existing technology directly deposits aluminum oxide on the silicon substrate after texturing, and the poor uniformity of the natural oxidation layer leads to poor adhesion of the aluminum oxide to the textured surface, effectively improves the passivation performance of the prepared aluminum oxide passivation layer, and thus significantly improves the open voltage and conversion efficiency of the TBC battery prepared from the aluminum oxide passivation layer.

The application relates to the technical field of batteries, in particular to a TOPCon solar cell structure and a preparation method thereof. The main body is an N-type silicon substrate. A boron diffusion doped region, an aluminum oxide passivation layer, a silicon nitride anti-reflection layer and an electrode are arranged on the front surface. The back surface is sequentially provided with a first tunneling oxide layer SiOx1 and a lightly doped poly-Si(n+)1. A second tunneling oxide layer SiOx2, a heavily doped poly-Si(n+)2 and a laser oxidation mask are arranged above the contact area. After alkali washing, the non-contact area poly-Si(n+)2 is removed, and the contact area double-layer poly (SiOx1 / poly-Si(n+)1 / SiOx2 / poly-Si(n+)2) is reserved, so that the contact resistance is reduced and the silver paste is prevented from being burnt through. The non-contact area is only provided with the lightly doped poly-Si(n+)1, and the parasitic absorption is reduced.