56 results about "Oxide passivation" patented technology

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

This application relates to a tunneling oxide passivation contact structure and its fabrication method, as well as a solar cell. The tunneling oxide passivation contact structure includes a first tunneling oxide passivation contact structure and at least one second tunneling oxide passivation contact structure stacked on the surface of the first tunneling oxide passivation contact structure. The first tunneling oxide passivation contact structure includes a first tunneling oxide layer and a first doped polycrystalline silicon layer stacked together. The second tunneling oxide passivation contact structure includes a second tunneling oxide layer and a second doped polycrystalline silicon layer stacked together. The second tunneling oxide layer includes doped polycrystalline silicon particles, and doped atoms are enriched in the doped polycrystalline silicon particles. The tunneling oxide passivation contact structure described in this application can promote carrier collection and reduce the carrier transport resistance in the tunneling layer, thereby significantly increasing the current.

The application discloses a preparation method of a metal oxide passivation film on a gallium nitride surface; the method comprises the following steps: mixing a metal nitrate precursor solution and a hole sacrificial agent to obtain a mixed solution; placing a substrate containing a GaN layer into the mixed solution and performing photochemical deposition under ultraviolet light to obtain a metal oxide passivation film formed on the surface of the GaN layer. The preparation method uses a metal nitrate as a precursor, and under ultraviolet light, photo-generated electrons and holes of the GaN are used to initiate a redox reaction at a solid / liquid interface to form a uniform and dense metal oxide passivation film. The method is simple in process, is performed at room temperature, does not need vacuum, has small interface damage, can be used to reduce the trap state density of the GaN surface, improve the interface stability and reliability of a device, and is suitable for surface / interface passivation treatment of power electronic and ultraviolet photoelectric devices.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

The application discloses a flexible self-powered day-blind ultraviolet detector based on gallium oxide and a preparation method thereof, which is specially designed for efficient and low-power-consumption ultraviolet light detection in a complex environment. The detector is characterized by asymmetric electrodes and an aluminum oxide passivation layer. Specifically, the first metal electrode and the second metal electrode are located on the gallium oxide film, and the two electrodes can form Schottky and ohmic contacts respectively through different processes and patterned passivation layers by virtue of the difference in material and size, thereby effectively improving photoelectric performance. The first metal electrode realizes high-quality ohmic contact through increasing the contact area, material selection and annealing process. The second metal electrode realizes Schottky contact and improves the contact barrier through material selection and introduction of the passivation layer. The asymmetric electrode design can enhance the built-in electric field and effectively realize the separation of photo-generated carriers, thereby better realizing self-power supply.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

A planar diode with high surge capacity and a preparation method thereof. Relate to a semiconductor device. It comprises a substrate, a P+ substrate region diffused from the top of the substrate, located in the substrate, the top of the substrate is provided with an annular notch near the edge, an arc-shaped shoulder is provided between the annular notch and the top surface of the P+ substrate region, and an oxide passivation film is provided on the arc-shaped shoulder and connected with the substrate and the P+ substrate region respectively, the top surface and the bottom surface of the planar diode are respectively provided with a metal layer. The metal layer comprises an upper metal layer provided on the oxide passivation film and connected with the P+ substrate region in the middle, and a lower metal layer provided at the bottom of the substrate. The application effectively avoids avalanche at the edge of the planar diode chip first, improves the surge capacity and reliability of the diode, and improves the product quality.

This invention belongs to the field of solar cell technology and relates to a method for producing a tunneling oxide passivated contact solar cell. This invention improves light absorption efficiency and ensures smooth current flow by sequentially texturing, P-type diffusion, and etching a silicon wafer. An aluminum oxide passivation layer is deposited on the front side of the etched silicon wafer. A silicon oxide film is prepared on the front aluminum oxide passivation layer and the back side of the silicon wafer, and a doped amorphous silicon film is deposited on the silicon oxide film. The amorphous silicon film deposited on the silicon wafer is annealed to crystallize it, forming a polycrystalline silicon structure. A silicon nitride film is deposited on the back amorphous silicon layer as an antireflection layer and protective layer, which reduces light reflection on the cell surface and improves light absorption efficiency. Metal grid lines are printed on the front and back sides of the silicon wafer, and the silicon wafer with the printed metal grid lines is placed in a high-temperature furnace for sintering to obtain a tunneling oxide passivated contact solar cell.

This invention provides a high-temperature resistant and corrosion-resistant composite film for use in liquid metal environments and its preparation method. The high-temperature resistant and corrosion-resistant composite film comprises an inner passivation layer, an intermediate barrier layer, and an outer functional layer sequentially fixed to the surface of a metal substrate. The inner passivation layer is an oxide; the intermediate barrier layer is an amorphous material; and the outer functional layer is a ceramic material. This invention ensures adhesion through the oxide passivation layer, blocks diffusion through the amorphous barrier layer, and provides stability and self-healing properties through the ceramic material functional layer. Through the synergistic effect of these three layers, it protects structural materials in contact with liquid metals, extends equipment life, and improves system safety and economy, solving the problems of poor protection and performance degradation inherent in traditional single-coating systems.

The invention discloses silver-tungsten double-shell copper-clad powder, a preparation method thereof and conductive paste. The powder sequentially comprises a copper core, a compact inner tungsten shell and an outer silver shell from inside to outside, wherein the compact inner tungsten shell and the outer silver shell are formed through atomic layer deposition (ALD). The thickness of the inner tungsten shell layer is 1-10 nm, and the thickness of the outer silver shell layer is 10-100 nm. The preparation method comprises the steps of copper powder pretreatment, inner tungsten shell layer deposition, surface activation, outer silver shell layer deposition, cleaning, drying and the like. The high melting point of tungsten and the thermal expansion coefficient similar to that of copper are utilized, and the problem that when traditional silver-coated copper powder is sintered at the high temperature of 300 DEG C or above, dehumidification and oxidation are prone to occurring, and consequently conductivity is deteriorated is effectively solved. Conductive paste prepared from the powder can be widely applied to electrode manufacturing of tunneling oxide layer passivation contact, heterojunction or back contact and other efficient solar cells, and has high oxidation resistance, low cost and excellent temperature resistance.

The application provides a surface passivation treatment method for optimizing a tunneling oxide passivation battery, which comprises the following steps: in a BOE cleaning step, placing an annealed silicon wafer into a mixed solution of a tank cleaning device, cleaning the silicon wafer in the mixed solution for more than 120s, taking out the silicon wafer and cleaning the silicon wafer with sufficient DIW, then placing the silicon wafer into an acid solution, taking out the silicon wafer and cleaning the silicon wafer with a large amount of DIW, and bubbling in the cleaning process, and finally passivating the surface of the silicon wafer by using an (NH4)2S solution; and in a reflection reduction film manufacturing step, the reflection reduction film is divided into three layers for preparation. The application utilizes sulfur passivation of the P-type emitter of the battery, assists accumulation of negative charges of aluminum oxide to enhance the field passivation effect, passivates the silicon surface dangling bond, releases the process window reduction caused by the accumulation of [H] source for hydrogen passivation in the preparation process of silicon nitride, and reduces the performance attenuation caused by the escape of [H] in the long-term use of the battery assembly.

The invention discloses a novel TOPCon battery preparation process and device, and relates to the technical field of battery processing, and the novel TOPCon battery preparation process comprises the following steps: S1, preparing a sheet; s2, scribing: segmenting the whole cell by using laser; s3, side face polishing is conducted, specifically, chain type etching and alkali washing are conducted on the cutting face, and the cutting face is corroded at the temperature of 30-60 DEG C through 10-30% of TMAH and 5-20% of IPA aqueous solution; s4, edge passivation is conducted, specifically, an aluminum oxide passivation film of 20-50 nm is deposited in an atomic layer deposition mode, and annealing is conducted for 30-60 min at the temperature of 250-300 DEG C; and S5, IV testing: testing the appearance, IV and EL performance of the battery piece, and then grading. Preferably, the flaking process comprises the steps of texturing and boron diffusion. According to the invention, a battery panel is driven to move in a manner of carrying liquid through a roller, and silicon, silicon nitride and silicon oxide on a cut surface of the battery can be corroded and polished by using a TMAH + IPA solution and an HF solution.

The application relates to the technical field of batteries, in particular to a TOPCon solar cell structure and a preparation method thereof. The main body is an N-type silicon substrate. A boron diffusion doped region, an aluminum oxide passivation layer, a silicon nitride anti-reflection layer and an electrode are arranged on the front surface. The back surface is sequentially provided with a first tunneling oxide layer SiOx1 and a lightly doped poly-Si(n+)1. A second tunneling oxide layer SiOx2, a heavily doped poly-Si(n+)2 and a laser oxidation mask are arranged above the contact area. After alkali washing, the non-contact area poly-Si(n+)2 is removed, and the contact area double-layer poly (SiOx1 / poly-Si(n+)1 / SiOx2 / poly-Si(n+)2) is reserved, so that the contact resistance is reduced and the silver paste is prevented from being burnt through. The non-contact area is only provided with the lightly doped poly-Si(n+)1, and the parasitic absorption is reduced.

The application relates to a solar cell and a preparation method thereof, which comprises a substrate, a tunneling oxide passivation structure, an intrinsic amorphous silicon layer, a first passivation layer, a first transparent conductive structure and a first electrode. The substrate comprises a first surface and a second surface arranged oppositely, and the first surface comprises first areas and second areas arranged alternately; the first areas comprise electrode areas and non-electrode areas; the tunneling oxide passivation structure is arranged in the first areas; the intrinsic amorphous silicon layer is arranged in the non-electrode areas; the first passivation layer is arranged in the non-electrode areas on the side of the intrinsic amorphous silicon layer away from the tunneling oxide passivation structure; the first transparent conductive structure covers the first passivation layer and the tunneling oxide passivation structure in the electrode areas, and the thickness of the first transparent conductive structure in the electrode areas is smaller than that of the first transparent conductive structure in the non-electrode areas; and the first electrode is arranged in the electrode areas. The application can protect the intrinsic amorphous silicon layer and the first passivation layer through the first transparent conductive structure, so that the first passivation layer is not easy to be damaged.

The invention discloses a preparation method of a TBC solar cell. The preparation method comprises the following steps: alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer; carrying out boron diffusion conversion to obtain P-type polycrystalline silicon; laser patterning is prepared for N region deposition; acid pickling and alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer again; carrying out phosphorus diffusion conversion to obtain N-type polycrystalline silicon; removing PSG from the front side; patterning to expose the N-type polycrystalline silicon region; performing alkali texturing treatment to form a pyramid structure, and performing rounding treatment; pickling the back surface and reserving the polycrystalline silicon layer; depositing an aluminum oxide passivation layer and a silicon nitride passivation layer on two sides; laser trepanning is carried out to expose the P-type polycrystalline silicon region and the N-type polycrystalline silicon region; metallizing to form a precise electrode; and performing light injection to obtain the TBC solar cell. According to the TBC solar cell provided by the invention, BSGamp; the PSG is used as a mask, and the laser patterning / corrosion slurry is used for replacing photoetching and other mask materials, so that the compatibility with the existing TOPCON production line is high.

This invention relates to the field of photovoltaic device manufacturing, and in particular to a novel TOPCON cell and its fabrication method. The method involves sequentially depositing silicon oxide and polycrystalline silicon layers on the front and back sides of a grooved n-type substrate silicon to obtain a silicon wafer to be doped, followed by double-sided doping. The polycrystalline silicon layer and silicon oxide layer in the non-SE region of the front side of the doped silicon wafer are then removed to obtain a cell pre-mount. The pre-mount is cleaned to remove glass transition silicon. An aluminum oxide passivation layer is deposited on the front side of the pre-mount after glass transition silicon removal. A front-side silicon nitride layer is deposited on the surface of the aluminum oxide passivation layer, and a back-side silicon nitride layer is deposited on the surface of the polycrystalline silicon on the back side to obtain a photovoltaic silicon wafer. The photovoltaic silicon wafer is then surface-metallized to obtain the novel TOPCON cell. This invention increases the contact area between the front-side silicon oxide layer and the front-side polycrystalline silicon layer and the n-type substrate silicon, thereby improving the short-circuit current and fill factor of the cell.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

This invention discloses a negative electrode for a zinc-air battery, its preparation method, and its application. The negative electrode of the zinc-air battery includes a current collector and a negative electrode coating disposed on the surface of the current collector; the negative electrode coating includes a zinc-based material, a binder, and liquid metal. The negative electrode of the zinc-air battery proposed in this invention can effectively alleviate the uneven deposition of zinc in the negative electrode of the zinc-air battery, thereby effectively avoiding the formation of zinc dendrites, and can also effectively avoid the formation of a zinc oxide passivation layer (which lacks electrochemical activity) and the occurrence of hydrogen evolution side reactions. This invention also provides a method for preparing the above-mentioned negative electrode and its application.

The invention provides a crystalline silicon solar cell ozone gas passivation process which comprises the following process steps: S1, providing passivation equipment which comprises a control cabinet, an ozone generator is arranged in the control cabinet, the output end of the ozone generator is connected with a passivation tank through a second pipeline, and an ozone concentration detector is arranged on the second pipeline and in front of the passivation tank; the second pipeline is communicated with an annular uniform flow pipe in the passivation tank; the passivation tank is connected with the heating device through a fourth pipeline; s2, moving the cleaned silicon wafer into a passivation tank; s3, hot air and ozone are controlled to be supplied into the passivation tank through the control cabinet at the same time; and S4, taking out the passivated silicon wafer from the passivation tank, and carrying out the next treatment process. According to the silicon wafer passivation process, the ozone gas is introduced while the silicon wafer is dried after being cleaned, and the oxide layer is grown on the surface of the silicon wafer, so that the production process can be simplified, the uniformity and consistency of the oxide passivation layer on the surface of the silicon wafer can be considered, and the production efficiency is improved.

To provide a solar cell in which the conversion efficiency does not decrease even if the shapes of different regions of the cross section differ greatly. [Solution] The substrate includes opposing first and second surfaces and a side surface connecting the first and second surfaces. The side surface includes a cut surface including a cutting edge adjacent to the first surface and a breaking edge adjacent to the second surface, and a first passivation layer 4 formed on the cut surface, the first passivation layer 4 including an aluminum oxide passivation layer. The cut surface includes a first region adjacent to the cut edge and a second region farther from the cut edge than the first region, and the ratio of oxygen to aluminum in at least a portion of the second passivation layer 5 covering the first region is greater than the ratio of oxygen to aluminum in at least a portion of the second region.

The invention relates to the technical field of photovoltaic energy, in particular to modified glass powder and a preparation method thereof, battery back electrode paste, a battery and application. The raw materials of the modified glass powder comprise lead, tellurium, silicon, lithium, niobium and oxides and / or carbonates of auxiliary modification elements for adjusting the physicochemical properties of the modified glass powder. The molar percentage of each element is as follows: 15%-40% of lead, 20%-45% of tellurium, 5%-35% of silicon, 5%-25% of lithium and gt of niobium; 0 < = 10%, and 5-25% of auxiliary modification elements. The preparation method comprises the following steps: uniformly mixing oxides and / or carbonates containing lead, tellurium, silicon, lithium, niobium and auxiliary modified elements to prepare a raw material mixture; and melting and cooling to obtain a glass solid, and grinding the glass solid to obtain the modified glass powder. Therefore, according to the formula of the modified glass powder provided by the invention, the modified glass powder has low thermal expansion coefficient, high chemical stability and high glass forming property, not only can the acetic acid corrosion resistance of a tunneling oxide layer passivation contact solar cell be greatly improved, but also the metallization process of the back surface of an N-type cell can be met, good contact property is formed, and the service life of the N-type cell is prolonged. And mainstream different battery processes can be matched.

This application provides a method for improving the uniformity of alumina passivation films, relating to the field of photovoltaic cell technology. The method includes: placing a substrate in a reaction chamber; heating the reaction chamber and introducing a first reaction source and an inert gas for deposition; subjecting the reaction chamber to a first vacuum, followed by a first purging with the inert gas, and then subjecting the reaction chamber to a second vacuum; introducing a second reaction source and the inert gas for atomic layer deposition; subjecting the reaction chamber to a third vacuum, followed by a second purging with the inert gas, and then subjecting the reaction chamber to a fourth vacuum; wherein the first reaction source comprises trimethylaluminum, the second reaction source comprises water vapor, and the inert gas comprises nitrogen. The method of this application can effectively make the passivation film growth more uniform, thereby improving the density and uniformity of the passivation film, and thus meeting the requirements of the photovoltaic cell field for alumina passivation films.

The invention relates to the technical field of hard-to-treat gold ore hydrometallurgy, and discloses an ore characteristic analysis-based gold mineral comprehensive recovery and purification method, which comprises the following steps of: determining a sulfur-carbon mass ratio of arsenic sulfide-containing gold ore, and determining a target potential interval in a segmented potential control program according to the sulfur-carbon mass ratio; after pulp mixing, controlling the potential of the ore pulp in a first potential interval by adjusting the adding amount of an oxidizing agent, so that the ore pulp is stabilized at an arsenic-containing sulfide lattice selective dissociation site, and wrapping gold is released; fine-fraction pyrite is supplemented into the ore pulp in the second potential interval, the pyrite and the arsenic-containing sulfide are used for constructing an interface current activation passivation layer generated by a microcosmic primary battery, densification growth of an iron oxide passivation film is inhibited through the synergistic effect of ore phase selective dissociation and an interface polarization compensation mechanism, and therefore the iron oxide passivation film is prevented from being damaged. And the dissociation state of micro-fine particle gold in the ore is improved.

This invention belongs to the field of crude oil corrosion inhibition technology, specifically relating to a corrosion-inhibiting chemical and its preparation method. The corrosion-inhibiting chemical, by weight percentage, comprises the following components: 5-25% polyacid compound, 55-80% ionic liquid, 5-15% dispersant, and 2-8% stabilizer. The polyacid-ionic liquid compound corrosion-inhibiting chemical of this invention exhibits high slow-release efficiency and stability. The ionic liquid forms an adsorption film on the metal surface through adsorption, while the excellent redox properties of the polyacid can form a dense metal oxide passivation film at the metal interface. The electrostatic interaction between the polyacid anions and the ionic liquid improves the solubility and dispersibility of the polyacid in crude oil media. The synergistic effect of these two components forms a double protective film, further enhancing the corrosion inhibition effect in high-salt, acidic, and sulfur-containing media. The corrosion-inhibiting chemical synthesized in this invention is environmentally friendly and meets the requirements of green chemical development.

The invention provides an ultraviolet-induced degradation resistant film layer structure and a preparation method thereof, and relates to the technical field of TOPCon batteries. A film layer structure resisting ultraviolet induced degradation comprises an N-type silicon wafer substrate, a boron-doped emitting electrode is arranged on the front face of the N-type silicon wafer substrate, an aluminum oxide passivation layer is deposited on the boron-doped emitting electrode, and a composite film layer structure is arranged on the aluminum oxide passivation layer. And the thickness of the aluminum oxide passivation layer is 8-15 nm. The more compact and thicker aluminum oxide passivation layer is deposited, and the negative fixed charge density of the aluminum oxide layer can be improved by increasing the thickness of the aluminum oxide layer, so that field effect passivation is enhanced. In addition, a layer of silicon oxynitride is additionally arranged on the bottom layer, stress is relieved, and UV light is prevented from going deep into the bottom layer; and the refractive index is improved, a more compact SiNx film can be formed, and the stability of short-circuit current, open-circuit voltage and filling factors is improved, so that lower UV attenuation is realized.

The invention relates to a TOPCon battery and a preparation method thereof.According to the TOPCon battery, a singlet fission layer is arranged on an aluminum oxide passivation layer of a battery piece, high-energy singlet excitons can be generated after high-energy photons are absorbed, the high-energy singlet excitons are converted into two triplet excitons, the short-circuit current of the battery piece can be increased, meanwhile, heat loss is not caused, and the efficiency of the battery piece is improved. And the conversion rate of the battery piece can be improved. In addition, a sulfanyl compound is introduced into the pentacene singlet fission layer, so that the stability and singlet fission performance of the singlet fission layer can be improved. Besides, the ultrathin passivation layer containing hafnium oxynitride is arranged below the singlet fission layer, so that the singlet fission performance of the singlet fission layer can be promoted, and a silicon semiconductor can be prevented from being passivated.

The invention belongs to the technical field of crystalline silicon Topcon multi-fragmentation high-efficiency photovoltaic cell preparation, and particularly relates to a crystalline silicon Topcon multi-fragmentation high-efficiency photovoltaic cell and a preparation method thereof, and the cell is a 4, 5 or 6 equally-divided small cell obtained by carrying out laser cutting and edge passivation on a whole Topcon cell with a specific multi-fragmentation pattern layout. The production method mainly comprises the following steps: after multi-fragment pattern printing, cutting the whole cell into a plurality of small pieces by laser, and carrying out atomic layer deposition aluminum oxide passivation treatment on exposed edges generated by cutting. According to the invention, the series resistance loss of the module is reduced through the multi-fragment design, and the cutting damage is effectively repaired and the carrier recombination is inhibited by combining an innovative cell end edge passivation process, so that the output power of the module is remarkably improved on the premise that the size of the module is not changed.

The invention discloses a crystalline silicon solar cell structure based on an MXene transparent electrode, and belongs to the technical field of photovoltaics. The structure is based on a crystalline silicon substrate, a passivation layer, a carrier transport layer and an MXene transparent conductive layer are sequentially arranged on at least one surface of the crystalline silicon substrate, and a metal grid line electrode is prepared on the surface of the MXene layer. The structure can be adapted to various crystalline silicon cell types such as a silicon heterojunction solar cell (SHJ) and a tunneling oxide passivation contact cell (TOPCon). The MXene transparent electrode has high conductivity, an adjustable work function and high transmittance, can realize energy level matching with different battery structures and improve the charge collection function, and meanwhile, avoids damage of a traditional magnetron sputtering process to a functional layer. The MXene transparent electrode is prepared through a solution method, so that the production cost is reduced, the photoelectric conversion efficiency of the cell is effectively improved in combination with the optimized interface design, and a novel high-performance transparent electrode solution is provided for the crystalline silicon solar cell.

The invention relates to the field of back contact batteries, in particular to a double-sided back contact battery and a preparation method and application thereof. The double-sided back contact cell comprises: an n-type monocrystalline silicon substrate; the optical function layer is arranged on the front surface of the n-type monocrystalline silicon substrate and comprises an antireflection layer and a passivation layer; the composite functional layer is arranged on the back surface of the n-type monocrystalline silicon substrate and sequentially comprises an aluminum oxide passivation transition layer, a gradient antimony-doped zinc sulfide buffer layer, a titanium nitride transition layer, an indium tin oxide transparent conductive layer and a copper grid line electrode formed on the indium tin oxide transparent conductive layer from inside to outside; the antimony concentration of the gradient antimony-doped zinc sulfide buffer layer is increased in a gradient mode from inside to outside. According to the double-sided back contact battery, the photoelectric property and the long-term reliability of a back interface are synergistically optimized through the back composite structure design.