74results about How to "Reduce surface recombination rate" patented technology

he invention relates to a novel SINP silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused phosphorus, an ultra-thin SiO2 layer formed by low-temperature thermal oxidization and an ITO dereflection/collection electrode film formed by RF magnetron sputtering to prepares a novel ITO/SiO2/np blue-violet reinforced SINP silicone photo-battery. Preparation method of the invention is to take a silicon single crystal flake which is P type, and has crystallographic orientation of 100, electric resistivity of 2 2omega.cm and thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine chemistry, and then is thermally diffused by POC3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries, one being routine SINP photo-battery having emitting region square resistance of 10 Omega/square and junction depth of 1 Mu m, and the other one being SINP silicone blue-violet battery having emitting region square resistance of 37 Omega/square and junction depth of 0.4 Mu m). Removing the phosphorosilicate glass (HF:H2O=1:10) at front face; steaming Al at back of the silicon chip; thermally oxidizing the silicon chip at 400 to 500 DEG C and condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time alloying the Al at the back. Then RF magnetron sputtering the ITO dereflection/collection electrode film (ITO film is also deposited on the glass to study electrooptical characteristic thereof) having high transmittance and high conductivity, and sputtering a Cu gate electrode by metal mask direct-current magnetron. Finally, cutting the outer edge part of the battery by a diamond excircle downward cutting/a dicing saw so as to prevent short circuit of the edge of the photo-battery.

The invention discloses a preparation method of an organic-inorganic hybridization perovskite solar battery in a plane structure. The preparation method comprises the steps of selection and pretreatment of a transparent conduction substrate, magnetron sputtering of an n-type metal oxide layer or pulse laser preparation, preparation of an organic metal perovskite structure light absorption layer by a normal-pressure gas phase assistance solution method, preparation of a hole conduction layer structure, preparation of a metal alloy back electrode and the like. The method overcomes the problems of discontinuity, insufficient density, pinholes and the like of an n-type metal oxide film, an intermediate phase, pinholes, impure phases and the like of hydration organic metal halogen in a perovskite light absorption layer material, metal particle aggregation of the pure metal back electrode, layering of a hole layer and the like. The solar battery prepared by the method is high in efficiency, low in price, simple in technology, good in repeatability and suitable for mass production.

The invention relates to an N-type double-sided solar cell and a preparation method thereof. According to the preparation method of the N-type double-sided solar cell, fabrication of a p+ doped region on the front surface of a silicon substrate and an n+ doped region on the back surface of the silicon substrate is achieved by a technique of combining boron diffusion and phosphorus ion implantation; passivation of the front surface and the rear surface of the silicon substrate and antireflection of the front surface are achieved by a composite dielectric film of two or three of SiO<2>, Al<2>O<3> and SiN<x>; and finally metal contact of the p+ doped region on the front surface of the silicon substrate and the n+ doped region on the back surface is achieved through silk-screen printing and co-sintering technologies, and fabrication of the N-type double-sided solar cell is facilitated. According to the preparation method provided by the invention, an ion implantation technique is introduced into a fabrication technology of the N-type double-sided solar cell, so that a mask technology can be omitted; edge etching is not required; and the N-type double-sided solar cell fabricated by the ion implantation technique is high in photoelectric conversion efficiency, relatively concentrated in efficiency distribution and high in yield.

The invention discloses a crystalline silicon battery surface passive film and a manufacturing method of the crystalline silicon battery surface passive film. The crystalline silicon battery surface passive film comprises a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The silicon nitride film is deposited on the first silicon oxide film. The second silicon oxide film is deposited on the silicon oxide film. The thickness d1 of the first silicon oxide film is 10 nm-30 nm. The thickness d2 of the silicon nitride film is 30 nm-50 nm. The thickness d3 of the second silicon oxide film is 25 nm-50 nm. The probability of light full reflection is substantially increased, and namely more light enters a silicon wafer, so that more charge carriers are generated, and battery efficiency is improved.

The invention discloses a solar cell surface passive layer structure. A laminate passive film structure composed of a silicon dioxide passive film and a silicon nitride passive film is adopted for the structure, and therefore the defects that the interface defect density of the silicon nitride passive film is high, silicon-hydrogen bonds are not stable, the capacity for resisting metal ions of the silicon dioxide passive film is poor, moisture can be easily adsorbed and the reducing and reflecting effect of light is not good are overcome. The thickness of the silicon dioxide passive film is optimized to range from 10 nanometers to 40 nanometers, therefore, the passivating effect for electrically active impurities of silicon materials and surface defects of the silicon materials is greatly improved on the basis that the light absorbing rate is ensured, the surface recombination rate of a photon-generated carrier is obviously lowered, and the conversion efficiency of crystalline silicon can be improved by 0.3%. Meanwhile, the invention further discloses a preparing method of the solar cell surface passive layer structure. According to the method, the silicon dioxide passive film is prepared through the thermal oxidation technology, the silicon nitride passive film is prepared through the PECVD technology, and the method can be compatible with the solar cell preparing technology.

The invention discloses a boron diffusion method of an N type silicon chip, a crystalline silicon solar cell and a manufacturing method of the crystalline silicon solar cell. The boron diffusion method comprises the following steps of a deposition stage: placing the silicon chip subjected to wet etching into a diffusion furnace, raising the temperature to 890-920 DEG C, and then introducing nitrogen, oxygen and a boron source for depositing the surface of the silicon chip; a diffusion stage: raising the temperature of the silicon chip with the surface being deposited to a preset temperature under the atmosphere of nitrogen for promoting the diffusion of boron; a post-oxidation stage: dropping the temperature of the silicon chip with the boron being diffused, and introducing oxygen and nitrogen to obtain the silicon chip with the boron being diffused. After the deposition diffusion process disclosed by the invention is adopted, the concentration of boron atoms on the surface of the silicon chip is reduced, the recombination rate and the lattice damage of the surface are reduced, the STDEV (standard deviation) of the sheet resistance is controlled to be about 2.0, the sheet resistance uniformity of boron diffusion is improved, the battery conversion efficiency is improved, the consumption of boron sources is also reduced, BGS (borosilicate glass) is prevented from being excessively generated, and the cost is reduced.

The invention relates to a diffusing process with low temperature, low surface concentration and high sheet resistance. The diffusing process with low temperature, low surface concentration and high sheet resistance comprises an entering step, a depositing step, a propelling step and an exiting step. The diffusing process with low temperature, low surface concentration and high sheet resistance is characterized in that the reaction temperatures in the entering and depositing steps are lower than 800 DEG C. Preferably, at least one of the depositing step and the propelling step is carried out by steps according to different temperatures. Furthermore, the depositing step is divided into a first depositing step and a second depositing step. The propelling step comprises a first propelling step and a second propelling step. Preferably, an oxidizing step is further carried out between the entering step and the depositing step. The oxidizing step comprises the step of: introducing oxygen into a reactor. By utilizing the diffusing process with low temperature, low surface concentration and high sheet resistance provided by the invention, the reaction temperatures in the depositing and diffusing steps are reduced compared with the that in the conventional process, so that the surface compositing rate is reduced. Meanwhile, impurities are more beneficially migrated to the impurity absorbing point at the lower diffusing temperature in the diffusing process of polycrystalline silicon, so that the battery efficiency is further improved.

The invention discloses a hetero-junction-structured crystalline silicon solar cell with an intrinsic layer and a preparation method thereof. The crystalline silicon solar cell comprises a crystalline silicon substrate, and upper and lower amorphous alumina passivation dielectric layers; a p-type doped amorphous silicon carbon film and a TCO (Transparent Conductive Oxide) layer are arranged on the amorphous alumina passivation dielectric layer on the upper surface; an n-type doped amorphous silicon or micro-crystalline silicon film and a TCO layer are arranged below the amorphous alumina passivation dielectric layer on the lower surface; and the TCO layers on the upper and lower surfaces are both connected with a metal gate electrode. The preparation method comprises the steps of preparing the amorphous alumina passivation dielectric layers: preparing the ultra-thin amorphous alumina passivation dielectric layers simultaneously after the crystalline silicon substrate is acidized; and then preparing the p-type amorphous silicon carbon and the n-type amorphous silicon or micro-crystalline silicon and the TCO respectively to form the hetero-junction cell. The hetero-junction-structured crystalline silicon solar cell and the preparation method thereof have the advantages of simple process, good surface passivation performance of the crystalline silicon, good UV (ultraviolet) radiation-resistant performance, fully utilization of the sunlight and the like.

The invention relates to a passivating antireflection film of a high PID resistance type polycrystalline cell and a preparation process thereof. The passivating antireflection film comprises a first SiOx layer used as a bottom layer, a second SiOx layer used as a medium layer, and a third SiNx layer used as a top layer, wherein the first SiOx layer, the second SiOx layer and the third SiNx layer are sequentially deposited on the front surface of a monocrystalline chip substrate, and the total film thickness of the first SiOx layer, the second SiOx layer and the third SiNx layer is 65 to 120nm; the refraction rate is 1.9 to 2.25; the film thickness of the SiNx layer used as the medium layer is 10 to 50nm, and the refraction rate is 2.2 to 2.4; the film thickness of the SiNx layer used as the top layer is 30 to 80nm, and the refraction rate is 1.9 to 2.2; one or a plurality of SiNx layers are arranged as the top layer. The passivating antireflection film can reduce the reflecting rate and improve the passivating effect, so that the solar cell efficiency can be increased; the passivating antireflection film is outstanding in PID attenuating resisting characteristic.

The invention relates to a passivation process for a back of a crystalline silicon solar cell and a structure of a back-passivated crystalline silicon solar cell. The passivation process comprises: firstly, based on silicon nitride used as a mask on the back of a P-type silicon wafer, forming holes on the mask, then carrying out B diffusion to form heavy doping at the hole positions, washing away the silicon nitride mask, depositing a laminated film of aluminum oxide and silicon nitride, forming back contact patterns on the back of a cell, and manufacturing an aluminum electrode on the back of the cell. The invention has the beneficial effects that: the back-passivated solar cell has the following two characteristics: (1) a high-doped heavy-diffusion region is formed at the back contact and near position thereof of the cell, and the high-doped heavy-diffusion region is in good ohmic contact with the plated aluminum electrode, thus the series resistance of the cell is reduced; and (2) by annealing aluminum oxide, the back surface can be well passivated and the surface compounding rate is reduced, and silicon nitride has an action of protecting aluminum oxide, thus the destroy of aluminum oxide passivation effect in subsequent sputtering or evaporation process is avoided.

The invention discloses a solar battery with a black silicon structure on an emitter and a preparation method of the solar battery, and belongs to the technical field of manufacturing of solar battery devices. The solar battery comprises a metal grid line electrode, a passivation layer, the emitter, a black silicon layer, a silicon substrate and a metal back electrode, wherein the metal back electrode is positioned on the back surface of the silicon substrate; the emitter is positioned on the silicon substrate; the black silicon layer is positioned on the emitter; the passivation layer is positioned on the black silicon layer; and the metal grid line electrode is positioned on the passivation layer. The preparation method comprises the following steps of: preparing the metal back electrode on the back surface of the silicon substrate; preparing the emitter on the surface of the silicon substrate; preparing the black silicon layer on the emitter; preparing the passivation layer on the black silicon layer; preparing the metal grid line electrode on the passivation layer; and sintering the silicon substrate. By the structure of the solar battery provided by the invention, the uniformity of doping distribution of pn junctions can be effectively improved, and the open circuit voltage of the solar battery is improved, so that the efficiency of the solar battery is improved.

The invention relates to the field of surface treatment method for silicon chips, in particular to a method for removing a micro-damage layer from a crystalline silicon surface after RIE (Reactive Ion Etching) flocking. The method comprises the following steps of: cleaning an RIE-treated silicon chip with a mixed acid liquid of HNO3 and HF diluted with CH3COOH, wherein the volume percentage of the CH3COOH is 0.1-10 percent, and the volume percentage of the HNO3 is 85.0-99.5 percent; and thermally treating in a N2 atmosphere for 1-30 minutes at the temperature of 200 to 400 DEG C. Compared with an ordinary damage removing process, the invention has the advantages that: a non-aqueous acid etching liquid is adopted, and the ratio of HNO3 in an etching solution is increased simultaneously, sothat the etching rate is moderate, the process is easy to control, the etching uniformity is high, and the microscopic structure of an RIE flocked surface is kept; the method is suitable for industrial production; and a subsequent thermal treatment process is combined, so that the micro-damage layer on the surface of the silicon chip can be further reduced, and chemical residues are removed effectively.

The invention relates to the field of single-crystal PERC back etching alkali polishing process and discloses a front passivation process matching an alkali polishing selective emitter. In an oxidation process before an alkali polishing process, the oxygen layer deposition with high-temperature hot oxygen and a slot cooling rate are combined, which means that a process condition for depositing anoxide layer comprises a deposition temperature of 790 to 810 DEG C, a pressure of 100 to 120 mbar, an oxygen flow 3000 to 3500 sccm and a time 25 to 35 min, the cooling process has three steps, and then a boat is taken out of a tube and an existing process is employed. In the alkali polishing process coating process, a layer of silicon-rich film is separately added, that is, a first layer of silicon-rich film is deposited by PECVD.

The invention discloses a perovskite monocrystal material and microcrystalline silicon composite material combined thin film solar cell, and relates to a semiconductor device specially applied to converting an optical energy into an electric energy. The perovskite monocrystal material and microcrystalline silicon composite material combined thin film solar cell comprises a bottom electrode, an N type oxide semiconductor film, a perovskite monocrystal light absorption layer, a microcrystalline silicon hole transporting layer and a top electrode; the oxide semiconductor thin film is an N type zinc oxide semiconductor thin film obtained by sputtering; the perovskite monocrystal light absorption layer is a light absorption material of a perovskite structure; the hole transporting layer is a P type microcrystalline silicon composite material obtained by chemical vapor deposition; and the bottom and top electrodes are films made of aluminum or silver and obtained by thermal evaporation. According to the perovskite monocrystal material and microcrystalline silicon composite material combined thin film solar cell and a preparation method thereof, the perovskite monocrystal is taken as the light absorption material and the P type microcrystalline composite material is taken as the hole transporting layer, so the more stable and more efficient solar cell is obtained.

The present invention provides a heterogeneous emitting electrode structure of a solar cell and a solar cell. The heterogeneous emitting electrode structure of the solar cell comprises a substrate, afirst doping layer, a passivation tunnelling layer, a second doping layer, a passivation antireflection layer and a front electrode. The substrate, the first doping layer, the passivation tunnelling layer, the second doping layer and the passivation antireflection layer are arranged in order, and the front electrode passes through the passivation antireflection layer and is in contact with the second doping layer. In the invention, the passivation tunnelling layer is added to effectively reduce the surface recombination rate of the cell so as to improve the surface passivation performance of the cell; and the front electrode is in contact with the second doping layer to effectively improve the transverse transmission efficiency of the front surface of the cell and reduce the serial resistance of the cell so as to improve the cell filling factor and conversion efficiency and improve the solar cell conversion efficiency.