10results about How to "Reduce surface recombination rate" patented technology

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: firstly, providing an initial wafer; processing the initial wafer by adopting a laser process to obtain a substrate layer of which the first surface is provided with a plurality of groove regions and non-groove regions; a first tunneling dielectric layer is formed on the first surface, and the thickness of the first tunneling dielectric layer located in the groove area is larger than that of the first tunneling dielectric layer located in the non-groove area; then, an amorphous silicon layer is formed on the side, away from the substrate layer, of the first tunneling dielectric layer, and the thickness of the amorphous silicon layer located in the groove area is larger than that of the amorphous silicon layer located in the non-groove area; carrying out doping treatment on the amorphous silicon layer to obtain a doped layer; and finally, forming a first electrode on a part of the surface of the groove region. The preparation method of the solar cell can improve the performance of the solar cell.

The invention relates to the technical field of photovoltaic cell preparation, in particular to a cell assembly based on a rectangular silicon wafer and a processing method of the cell assembly. Comprising the following steps: placing a monocrystalline silicon wafer in a potassium hydroxide solution, texturing, washing and drying to obtain a textured silicon wafer; sequentially performing low-pressure diffusion, SE laser, polishing and oxidizing annealing on the textured silicon wafer to obtain a silicon wafer A; sequentially depositing an aluminum oxide layer and a silicon nitride layer on the back surface of the silicon wafer A to obtain a silicon wafer B; depositing a silicon nitride layer on the front surface of the silicon wafer B to obtain a rectangular silicon wafer; performing laser grooving, screen printing and sintering on the rectangular silicon wafer to obtain a single battery piece; the single battery pieces are connected in series through a welding strip to obtain a battery string; (3) sequentially laying glass, POE / EPE, a battery string, EVA and grid glazed backboard glass, sealing the edge by an edge sealing tape machine, and then, carrying out lamination, framing and junction box installation in the next process; and thus, a rectangular silicon wafer battery assembly is obtained.

The application relates to the technical field of light-emitting diodes, and discloses an AlGaInP light-emitting diode epitaxial wafer and a preparation method thereof. The preparation method of the AlGaInP light-emitting diode epitaxial wafer comprises the following steps: S1, providing a substrate; S2, sequentially depositing a buffer layer, an N-type confinement layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type confinement layer and a P-type window layer on the substrate; S3, depositing an ohmic contact layer on the P-type window layer; S4, performing dry etching on the ohmic contact layer to reserve nanometer materials at a target position, forming a plurality of nanometer columns, and forming grooves between the plurality of nanometer columns; and S5, preparing a composite repair layer on the inner surface of the grooves; the composite repair layer comprises an in-situ passivation layer, an AlGaAs transition layer and an AlAs layer which are sequentially stacked. By implementing the application, the crystal quality can be improved, etching defects can be repaired, the internal quantum efficiency can be improved through radiation recombination, and the reliability of the device can be improved.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

The utility model provides a kind of solar cell belongs to solar cell technical field, comprising: cell piece, passivation film layer is arranged on the front and / or back of cell piece, the thickness of passivation film layer exists thickness difference in the middle region of solar base and its edge region.The passivation film layer of thickness gradually changing is used in the front and / or back of cell of the application.When the film thickness of cell middle region is less than the film thickness of edge region, the incident light utilization of cell middle region can be increased while the passivation effect of cell edge region is enhanced.When light source mainly irradiates cell edge region, the amount of light of middle region is less, then the change trend that passivation film layer thickness in middle region is greater than edge region is used, to ensure the high incident light utilization of edge and the best passivation effect of middle region, improve the photoelectric conversion efficiency of overall cell.

The application provides a preparation method of a BC battery solving a front side wrap plating problem, a BC battery and a photovoltaic system, and relates to the technical field of photovoltaic cells. The method comprises the following steps: after polishing a silicon wafer, a first tunneling layer and a first poly layer are arranged on one side of the silicon wafer in sequence, a boron-doped passivation layer is arranged on the first poly layer, and a first laser opening mold is performed to obtain a first silicon wafer; a second tunneling layer, a second poly layer and a phosphorus-doped passivation layer are arranged on an N+ region of the first silicon wafer; a gap region is divided, a second laser opening mold is performed on the gap region by using a second laser to obtain a second silicon wafer; the second silicon wafer is subjected to rough polishing treatment and texturing treatment in sequence to obtain a third silicon wafer; an aluminum oxide layer is arranged on the surface of the third silicon wafer, and a silicon oxynitride layer is arranged on the surface of the aluminum oxide layer. The method can effectively remove the edge wrap plating layer by adding rough polishing treatment before texturing, so that the edge wrap plating layer can be effectively removed, and a normal textured surface can be prepared.

The invention relates to the technical field of photovoltaics, and discloses a passivation contact solar cell and a preparation method thereof. The preparation method comprises the following steps: providing a substrate layer with a first surface and a second surface which are opposite; forming an oxide layer on the first surface of the substrate layer; performing laser sintering treatment on the surface of the oxide layer; forming a first doping layer on the oxide layer after laser sintering treatment; forming a second doping layer on the second surface of the substrate layer; and forming a first electrode connected with the first doping layer on one side of the first surface of the substrate layer, and forming a second electrode connected with the second doping layer on one side of the second surface of the substrate layer. According to the invention, the laser sintering treatment is carried out on the oxide layer to realize accurate optimization of the surface of the oxide layer and improve the surface and interface characteristics, so that the surface recombination rate of the oxide layer and the substrate layer and the first doping layer is reduced, the service life of a carrier is prolonged, the photoelectric conversion efficiency and stability of the cell are improved, and the power generation efficiency is improved.

The present invention provides a TOPCon cell with SE structure, comprising: an N-type crystalline silicon substrate and a P+ doping layer, an aluminum oxide passivation layer, a second SiNx mask layer and a silver aluminum paste sequentially grown on the positive surface of the N-type crystalline silicon substrate. The beneficial effect of the present invention is to use a secondary boron diffusion method to realize a selective emitter structure of boron diffusion, so that the surface of the TOPCon cell has two concentrations of boron diffusion concentration, and can reduce doping and reduce surface recombination rate at non-SE structures, and highly dope the part where the metal and the metallization pattern contact to realize good ohmic contact, so as to realize that the TOPCon cell boron SE structure has both good contact performance and good passivation ability, and replaces the boron diffusion laser SE method to solve the problem of heavy doping of boron diffusion.

The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a photovoltaic cell manufacturing process parameter self-adaptive regulation and control system and method, and the system comprises a diffusion module which is used for carrying out the diffusion processing of a textured silicon wafer, and obtaining a diffusion sheet; the coating module is used for carrying out coating treatment on the etched silicon wafer at preset radio frequency power and preset process cavity pressure to obtain a coated silicon wafer; a data acquisition module; the control module is used for judging whether diffusion processing of the diffusion sheet meets a preset standard or not according to the minority carrier lifetime distribution characterization value of the diffusion sheet and judging whether coating processing of the coated silicon wafer meets the preset standard or not according to the film layer distribution characterization value of the coated silicon wafer; an adjusting module; and the optimization module is used for determining an optimization strategy under the condition that the coating treatment of the coated silicon wafer does not meet the preset standard according to the defect grid unit proportion of the coated silicon wafer. According to the invention, the manufacturing efficiency of the photovoltaic cell is improved.