4results about How to "Decrease the density of surface states" patented technology

The invention discloses a mesa type PIN photoelectric detector based on epitaxial Ge on Si and a preparation method, and relates to the technical field of semiconductor photoelectric devices. The detector comprises an N-type silicon Si substrate, a mesa structure formed by an intrinsic Ge layer and a P-type heavily-doped Ge layer which are sequentially and epitaxially arranged on the N-type silicon Si substrate, a passivation layer covering a mesa, and a metal electrode respectively connected with the P-type heavily-doped Ge layer and the N-type silicon Si substrate. According to the invention, the size of a germanium active region is greatly reduced by adopting a structure that a thin layer Ge is extended on the Si substrate and mesa isolation is combined, and generation and recombination of carriers are inhibited by cooperation of a Si / Ge heterojunction and side wall passivation, so that the dark current of the device is remarkably reduced. Meanwhile, by accurately controlling the thickness of the intrinsic Ge layer, flexible optimization can be carried out between high responsivity and high bandwidth, and the requirements of different near-infrared application scenes are met.

This application relates to the field of photovoltaic technology, and particularly to perovskite solar cells, tandem solar cells, and photovoltaic modules. The perovskite solar cell includes a perovskite light-absorbing layer, which comprises perovskite material and amino-functionalized polymer additives. The perovskite material includes materials with the general formula ABX3, where A ions are monovalent cations and B ions include Pb. 2+ The X ion is a monovalent anion; the amino-functionalized polymer additives include at least one selected from polyethyleneimine, polypropyleneimine, amino-functionalized polyetherimide, amino-functionalized polyvinylpyrrolidone, amino-functionalized polyvinyl alcohol, amino-functionalized polyacrylic acid, and amino-functionalized polyquaternary ammonium salt. This application adds amino-functionalized polymer additives to the perovskite light-absorbing layer to passivate defects at perovskite grain boundaries, reduce surface state density, prolong carrier lifetime, increase short-circuit current density, enhance the bending resistance of the perovskite light-absorbing layer, and improve the environmental stability of the device.

The invention provides a preparation method of a battery edge passivation composite film layer and a battery piece, and the method comprises the following steps: placing a sliced substrate in a magnetron sputtering cavity, and controlling the temperature of the substrate at 25-250 DEG C; sputtering a first target material by using a first medium-frequency power supply so as to deposit and form a passivation buffer layer on the substrate; sputtering a second target material by using a radio frequency power supply so as to deposit and form a passivation layer on the passivation buffer layer; sputtering a third target material by using a second medium-frequency power supply to deposit and form a passivation protection layer on the passivation layer to obtain a substrate with a passivation composite film layer; and the substrate with the passivation composite film layer is put into an annealing furnace to be subjected to an annealing process, and the temperature range is 100-300 DEG C. Compared with the prior art, the method provided by the invention is suitable for temperature-sensitive low-temperature process batteries such as heterojunction batteries, HBC batteries, HTBC batteries and the like, and passivation is realized without sacrificing the performance of the battery body.