1results about How to "Decrease the density of surface states" patented technology

The application discloses a kind of HEMT device structures and methods of inhibiting current collapse.The HEMT device structure of inhibiting current collapse includes: epitaxial structure, including the heterojunction of sequentially arranged along first direction, P-type semiconductor layer and n++ type heavily doped layer, the heterojunction has carrier channel, and the conduction band of the carrier channel is pulled down to Fermi level below by n++ type heavily doped layer;And, source, drain and gate, the source, the drain is electrically connected with the heterojunction, the gate is arranged on the P-type semiconductor layer, the gate is arranged between the source and the drain along second direction, and the second direction and the first direction are cross arrangement.The application avoids additional semiconductor manufacturing processes, such as etching, ion implantation, etc., in the vicinity of gate, avoids introducing a large number of surface states, so as to improve the dynamic characteristics of device.