Surface modification method for SnO<2>-based photo-anode

Abstract

The invention discloses a surface modification method for an SnO<2>-based photo-anode, and belongs to the field of photoelectrochemistry. The surface modification method comprises the following implementation steps: (1) dissolving soluble chromic acid or chromate containing high-valent chromium into water to prepare a chromic acid or chromate solution a containing the high-valent chromium; (2) preparing a water solution b of a non-oxidizing acid with certain concentration; (3) soaking an SnO<2> mesoporous thin film of which the surface is subjected to hydrophilizing treatment into the solution a for a certain period of time, taking out and soaking the SnO<2> mesoporous thin film into deionized water or washing the SnO<2> mesoporous thin film with the deionized water, soaking the SnO<2> mesoporous thin film into the solution b for a certain period of time, taking out and soaking the SnO<2> mesoporous thin film into the deionized water or washing the SnO<2> mesoporous thin film with the deionized water, and drying the SnO<2> mesoporous thin film at a certain temperature; and (4) repeating the step (3) for a plurality of times, drying and burning the SnO<2> mesoporous thin film to obtain the SnO<2>-based photo-anode subjected to CrO<x> surface modification. The effect improvement of the SnO<2>-based photo-anode prepared by the method disclosed by the invention is obvious; and the method is simple to operate and easy to implement.

Description

technical field [0001] The present invention relates to a kind of SnO 2 The surface modification method of the base photoanode is mainly applied in photoelectrochemical related fields such as sensitized solar cells, photolysis of water, and photofuel cells. Background technique [0002] The current environmental pollution problem is serious, and the development and utilization of new energy is imminent. In recent years, solar energy has attracted much attention as a clean energy. Photoelectrochemical devices such as sensitized solar cells, photolytic water splitting, and photofuel cells are one of the important ways for the potential utilization of solar energy in the future. SnO 2 As a wide-bandgap semiconductor with cheap, non-toxic, abundant raw materials, stable chemical properties and high carrier mobility, it has become a matrix material for photoelectrochemical devices with great potential. But nano SnO 2 The surface state density of the structure is high, which ...

AI Technical Summary

Problems solved by technology

However TiCl 4 It is a highly toxic liquid that produces toxic and corrosive (hydrogen chloride) fumes in the air or in contact with water, which are highly corrosive and irritating

It is not easy to protect during use, and it is easy to cause physical harm to experimental or production personnel-inhalation of the fume will cause strong irritation of the upper respiratory tract mucosa (mild poisoning has symptoms of asthmatic bronchitis; severe cases have dyspnea, respiratory pulse Accelerate, body temperature rise, cough, expectoration, etc., can develop into pulmonary edema)

In addition to releasing corrosive hydrogen chloride, TiCl 4 Very easy to hydrolyze, even dissolve TiCl in ice-water mixture 4 Also often due to TiCl 4 rapid hydrolysis without obtaining a clear solution

In addition, TiCl 4 Titanium oxides and oxychlorides will also be generated when exposed to water or in humid air, which will stick to the syringe used, which also increases the risk of configuring TiCl. 4 solution difficulties

And its aqueous solution because TiCl 4 The rapid hydrolysis cannot be stored for a long time, and it can only be prepared and used now

[0004] Atomic layer deposition (ALD) technology can also be very good on nano-SnO 2 An effective passivation layer is prepared on the surface of the structure, but the atomic layer deposition (ALD) equipment is expensive and the cost of preparation is high

Images