The invention relates to a method for preparing a copper indium gallium selenide film by photoelectrochemical deposition, which is to deposit a copper indium gallium selenide film on a substrate placed in an electrolyte by using a photoelectrochemical deposition method; the electrolyte is selected from aqueous solution, organic solution, ion Liquid or mixed solution, which contains at least one of copper, indium, gallium, and selenium ions; the photoelectrochemical deposition process parameters are: the working electrode potential is -6.0 ~ 1.5V (vs SCE); at least one single color The light is used as incident light, and the included angle between the incident direction of the incident light and the working electrode is 0-90°. Finally, heat treatment can be performed on the obtained film. The invention solves the problems of poor film morphology, difficulty in indium and gallium deposition, and slow film growth rate encountered in traditional electrodeposited copper indium gallium selenide films, and has the advantages of good film quality, fast growth rate, controllable composition and good shape etc., the preparation method is low in cost, easy to realize large-area deposition of copper indium gallium selenide thin film, and is conducive to its large-scale industrial promotion and application.