239 results about "Copper indium gallium selenide" patented technology

A recovery method for copper indium gallium selenide. The method includes firstly using a mixed solution of hydrochloric acid and hydrogen peroxide to dissolve the metal powder containing CIGS. After selenium is separated using hydrazine, copper is replaced by indium metal. Finally, indium and gallium are separated by a supported liquid membrane (SLM) combined with a dispersed stripping solution. The acid used in all the steps of the method is hydrochloric acid, so the copper indium gallium selenium can be separated one by one without the conversion of the solution during the operation, effectively reducing the process time and cost.

A nanoparticle composition is disclosed comprising a copper indium gallium selenide, a copper indium sulfide, or a combination thereof. Also disclosed is a layer comprising the nanoparticle composition. A photovoltaic device comprising the nanoparticle composition and/or the absorbing layer is disclosed. Also disclosed are methods for producing the nanoparticle compositions, absorbing layers, and photovoltaic devices described herein.

The invention provides a method for preparing a film of an absorbing layer of a copper indium gallium selenium (CIGS) solar cell, which comprises the following steps: 1, depositing a copper indium gallium (CIG) ternary metallic film, evaporating a selenium film to form a nanometer grade CIGS film structure, ensuring the temperature of a Se evaporating source is between 260 and 300 DEG C, and repeating the step for 10 to 50 times; and 2, carrying out quick annealing treatment on the superposed CIGS absorbing layer film to prepare the nanometer grade polycrystalline CIGS film. The method has the advantages that the proportion of various elements can be accurately controlled; compared with other methods for preparing the CIGS films, each element is distributed uniformly in the whole thickness range of the film with small change gradient; the whole technical process is simple and convenient, and is suitable for large-scale continuous production. Furthermore, the invention also discloses the CIGS absorbing layer film of the CIGS solar cell, the solar cell containing the CIGS absorbing layer film of the CIGS solar cell, and the manufacturing equipment used in the method.

The invention relates to a preparation method of a light absorption layer film of a CIGS (copper indium gallium selenide) solar cell, which is characterized by comprising the following steps of: preparing a CIGS precursor thin film which has high reactivity and can be subjected to fast reaction sintering by a magnetron sputtering method on a bottom electrode through simple target sputtering and copper-enriching target and copper-lacking target sputtering simultaneously or sequentially; and then, carrying out heat treatment on the CIGS precursor thin film for fast reaction to generate a smooth, compact and uniform CIGS solar cell light absorption layer thin film with excellent photoelectric properties. The preparation method provided by the invention has the advantages of strong controllability, high thin film quality, good thin film uniformity and simple processes and is suitable for industrial production.

The invention relates to a method for manufacturing a sodium-doped absorbing layer on a reel-to-reel flexible polyimide (PI) substrate. The method is characterized by comprising the steps of 1 performing preparation before work, 2 preparing Na-doped indium gallium selenide (IGS) film, 3 preparing a copper-rich copper indium gallium selenide (CIGS) film; and 4 preparing the sodium-doped absorbing layer on the reel-to-reel flexible PI substrate. The method adopts a vacuum evaporation technology, keeps a distance between evaporation sources and the PI substrate to be 300-400mm and adjusts tape transporting speed of the PI substrate to enable the PI substrate to be lower than 450 DEG C, elements evaporated by the evaporation sources can be compounded on a back electrode Mo of the PI substrate well, and the Na-doped IGS film with even thickness is formed on the back electrode Mo. Due to the fact that Na atoms diffuse and enter the crystal boundary position of the IGS film to form a deep energy level defect, a foundation is laid for fully even Na doping into a large-area absorbing layer and strengthening of adhesion of the absorbing layer, and the effects of improving open-circuit voltage and electrical property of batteries are played.

Techniques for fabricating a photovoltaic device having a chalcopyrite absorber layer, such as a copper indium gallium selenide/sulfide (CIGSS) absorber layer, are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A precursor solution of metal chalcogenide dissolved in hydrazine or a hydrazine-like solvent is formed. Spray pyrolysis in an inert environment is used to deposit the precursor solution onto a substrate to form a metal chalcogenide layer on the substrate. A buffer layer is formed adjacent to a side of the metal chalcogenide layer opposite the substrate. A transparent conductive contact is formed adjacent to a side of the buffer layer opposite the metal chalcogenide layer.

The invention discloses a method for preparing a CIGS (copper indium gallium selenide) film through selenylation at low temperature. The method comprises the following steps of carrying out a reaction on a copper resource, an indium resource, a gallium resource and a selenium resource as well as alkylamine so as to obtain CIGS nanocrystalline, mixing the CIGS nanocrystalline with a solvent so as to obtain CIGS nanocrystalline ink, coating so as to obtain a coating substrate, then carrying out steam inducing low temperature selenylation: putting the coating substrate and an organic selenium alcoholic solution independently in a closed environment, heating to 100-400 DEG C, carrying out a selenylation reaction through full contact of the steam generated by the organic selenium alcoholic solution and the coating substrate, and obtaining the CIGS film. By adopting steam inducing selenylation, the method has the advantages of good selenylation effect, low toxicity and safety as well as lower selenylation temperature, and is convenient to coat the film on a low temperature enduring flexible substrate. The photoelectric conversion efficiency can be improved when obtained CIGS films are used for preparing solar energy batteries.

The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuIn_xGa_1-xSe₂) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.

The invention relates to the preparation technology of film solar cell, in particular to a preparation method for a copper indium gallium selenide optical absorption layer. The preparation method comprises the steps of (1) uniformly mixing, stirring and ball-milling selenide of metal copper, indium and gallium or metal copper, indium and gallium and selenium simple substance in stoichiometric ratio, and obtaining copper indium gallium selenide nano particles, of which the particle diameter is 10-10,000nm, wherein the atom molar ratio of Cu: In: Ga: Se is (0.9-1):(0-1): (0-1):2; (2) dispersing the copper indium gallium selenide nano particles in a mixing solution formed by dispersant and film-forming agent; stirring or grinding or magnetically stirring and dispersing the particles so as to obtain CIGS (Copper Indium Gallium Selenide) precursor slurry; (3) coating a substrate with the precursor film, drying the precursor film in the air atmosphere to remove the dispersant and the film-forming agent; and obtaining precursor film; and (4) quickly warming and thermally treating the precursor film in the insert atmosphere to obtain copper indium gallium selenide solar cell optical absorption layer film finished product. The method provided by the invention simplifies the process flow, has high production efficiency and is helpful for environment friendliness and; and the method broadens the idea for large-scale industrialization of CIGS film solar cell.

The invention belongs to the technical field of glass, and in particular relates to silicate glass with high strain point and application thereof. According to mass percent of oxide, the silicate glass with the high strain point comprises the following components: 56-70 percent of SiO2, 4.0-12.0 percent of Al2O3, 4.0-12.0 percent of CaO, 2.0-7.0 percent of MgO, 0-5.0 percent of SrO, 0-5.0 percent of BaO, 3.0-14.0 percent of Na2O, 0-7.0 percent of K2O, 1.5-6.0 percent of ZrO2, 0-1.0 percent of TiO2 and 0-1.0 percent of CeO2. The glass with the stain point being over 560 DEG C is high in hardness, is suitable for a CIGS (Copper Indium Gallium Selenide) film battery substrate, and is suitable to be used as a cover plate glass of medium and high-grade touch screens after chemical tempering.

The invention discloses a method for preparing a copper-indium-gallium-selenide (CIGS) solar photovoltaic cell. The method for preparing the photovoltaic cell comprises the following steps of: cleaning a glass substrate, sputtering a molybdenum metal, sputtering a copper-indium-gallium alloy, performing selenylation (vulcanization), depositing zinc sulfide in a chemical bath, sputtering zinc oxide and sputtering aluminum-doped zinc oxide. The method is high in utilization rate of raw materials, uniform in components of cell compounds, high in photoelectric conversion efficiency and good in repeatability.

The invention relates to an alkali metal doping method for preparing a CIGS absorbing layer on a flexible substrate, and belongs to the technical field of copper indium gallium selenide (CIGS) thin film solar cells. The alkali metal doping method comprises that a CIGS absorbing layer is deposited by using a co-evaporation process; and with the increase of Cu content in the absorbing layer, the thin film growth experiences a copper-poor to copper-rich process, in the copper-rich process, when Cu(In+Ga)>1 in a CIGS thin film, the evaporation of the Cu element is stopped so that the slightly copper-rich CIGS thin film can finally become copper-poor, then the In and Ga atoms are evaporated until the deposition thickness is 1/10-3/10 of the thickness of the absorbing layer, in this process, an alkali metal compound is co-evaporated, the doping amount is 0.08-0.12% of the atomic ratio with respect to the CIGS thin film, the temperature of the substrate is reduced to the room temperature, and the CIGS thin film having a thickness of 1-3 <mu>m is obtained. The invention has the advantages of having a simplified process, a high production efficiency and thin film crystal high-quality, increasing the carrier concentration of the absorbing layer, lowering the resistivity, improving the electrical properties of the thin film cell, thus improving the photoelectric conversion efficiency of the CIGS thin film solar cell and the like.

A flexible solar cell is achieved which has a high photoelectric conversion efficiency and no aged deterioration. A cell 10 (unit cell) is formed as a unit, comprising: a lower electrode layer 2 (Mo electrode layer) formed on a flexible mica sheet substrate 1 (substrate); a light absorber layer 3 (CIGS light absorber layer) which contains copper indium gallium selenide; a highly resistant buffer layer thin film 4 formed of InS, ZnS, CdS, or the like on the light absorber layer 3; and an upper electrode layer 5 (TCO) formed of ZuOAl or the like, and furthermore, a contact electrode section 6 for connecting between the upper electrode layer 5 and the lower electrode layer 2 is formed in order to connect a plurality of unit cells 10 in series. The contact electrode section 6 has a Cu/In ratio higher than that of the light absorber layer 3, and in other words, has less In contained therein to have a property of p+ (plus) type or a conductor relative to the light absorber layer 3 which is a p-type semiconductor.

The invention discloses a method for preparing a novel conductive indium oxide target and an indium oxide film. A third element is added to an original binary oxide to improve the electric carrier mobility so as to further improve the light transmittance and the electrical conductivity; and the related target is prepared by the combination of casting molding and high-temperature sintering for the first time. Therefore, the uniformity and compactness of the target are improved; an abnormal electric arc in a sputtering process is greatly reduced; the service life of the target is prolonged; the utilization rate of the target is improved; the quality and the performance of the sputtering film are improved; the efficiency of a copper indium gallium selenide (CIGS) solar cell is effectively improved; and the requirements of production are met.

The invention discloses a method for preparing a copper indium gallium selenide thin film battery, which comprises the following steps of: forming a metal back electrode layer on one side of a glass substrate; emitting a first laser beam penetrating the glass substrate from the side of the glass substrate away from the metal back electrode layer so as to form a first groove penetrating the metal back electrode layer; forming a copper indium gallium selenide light absorbing layer on the metal back electrode layer and the surface of the first groove; forming a buffer layer on the copper indium gallium selenide light absorbing layer; forming a barrier layer on the buffer layer; emitting a second laser beam to etch the barrier layer so as to form a second groove reaching the metal back electrode layer; forming a window layer on the barrier layer and the surface of the second groove; and emitting a third laser beam to etch the window layer so as to form a third groove reaching the metal back electrode layer. The copper indium gallium selenide thin film battery prepared by the method has the advantage of low possibility of generating short circuit.

The invention relates to a preparation method of a copper indium selenide nanocrystalline material, which adopts a solvothermal method for reaction at a high temperature so as to prepare a copper indium selenide nanocrystalline material with a regular shape, a uniform size, a particle size of about 20nm and good crystallinity. Compared with the preparation of the traditional copper indium selenide film, the preparation of the copper indium selenide nanocrystalline material has the advantages of good repeatability, simple process, low environmental pollution, each control of the stoichiometric ratio of atoms and the like. Since the forbidden bandwidth of the copper indium selenide is around 1.04eV, the nanocrystalline material can be used for preparing the absorption layer of the solar cell through drip casting or film spinning, and can also be used for sensitizing titania, zinc oxide or other materials with a wide forbidden band, so as to improve the energy conversion efficiency of the solar cell.

A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.

The invention aims at providing a method for preparing a novel conductive indium tin oxide material and a film of the material. In the process that a novel indium tin oxide film is prepared, an indium tin oxide film with high light transmittance and a titanium element is initially used, and the design of a multi-layer film structure of a sandwich shape is formed with the combination of a silver or silver alloy film in the middle layer is utilized, so that the resistance of the film is greatly reduced under appropriate thickness control, the high visible light transmittance of the film is maintained, the applicability of the indium tin oxide film in a film photo battery such as a touch control screen and a CIGS (Copper Indium Gallium Selenide) is improved, and the production requirements are met. As the film is applicable to low-temperature (less than 150 DEG C) film plating, the film can be applied to a glass base material or a flexible PET (Polyethylene Glycol Terephthalate) base material, and the application range is widened. The resistance can be reduced to be less than 5*10<-5>omega cm, and the light transmittance can reach more than 90%.

A method for preparing a cadmium-free copper indium gallium selenide thin film solar cell, comprising the following steps: step 1, forming a back electrode and a copper indium gallium selenide light absorption layer on a substrate in sequence to form a sample; step 2, adding zinc acetate dihydrate Dissolve in absolute ethanol, add a stabilizer, and heat to form a sol; step 3, immerse the sample in the sol for 5 to 10 seconds, and then lift the sample from the sol; step 4, put the sample Dry at 100-200° C. for 30 minutes to form a zinc oxide film on the surface of the sample; Step 5, put the sample into a selenization chamber and perform annealing treatment under an atmosphere of hydrogen sulfide to convert the zinc oxide film into a zinc sulfide buffer layer film; And step six, sequentially forming a barrier layer and a window layer on the zinc sulfide buffer layer film. Due to the high temperature in the annealing process of the above preparation method, the crystalline quality of the thin film can be improved. The invention also provides a preparation method of the zinc sulfide buffer layer film.

The invention particularly discloses a method for electrodepositing a copper indium diselenide or copper indium gallium selenide film by a special pulsing power source. The method comprises the following steps: in electrolytic solution containing copper, indium, selenium ions or copper, indium, gallium and selenium ions, a preformed film is prepared through electrodepositing on a cathode substrate by adopting bell-shaped wave adjusted square-wave pulse; and then, the preformed film is annealed under vacuum, nitrogen or argon having a solid selenide source to generate the copper indium diselenide or copper indium gallium selenide film finally, wherein, parameters of pulse electrodepositing are as follows: pulse frequency is between 26 and 400kHz, duty factor is between 1 and 100 percent; the mode of electrodepositing is pulse constant potential or pulse constant current, the range of the pulse potential is between 0.5 and 4V, the range of the pulse current is between 0.5 and 3mA, and the deposit time is between 10 and 120min. The method has high frequency and high strength of burst pulse polarization; the method leads ions requiring depositing to perform resonance through adjusting frequency in large scale to effectively deposit the ions; and the method can less deposit current, and realize deposit of elements with more negative potential of a standard electrode without adverse phenomena of liberation of hydrogen.

The invention discloses a method for preparing a chalcopyrite-type copper indium gallium selenide or sulfide semiconductor film material and relates to a semiconductor film material. The invention provides a method for preparing the chalcopyrite-type copper indium gallium selenide or sulfide semiconductor film material. A Cu metal prefabricated layer, a In metal prefabricated layer and a Ga metal prefabricated layer are deposited on a soda lime glass Mo substrate by stages through a vacuum magnetron sputtering, heating evaporation or chemical water bath electrodeposition method; N2 and H2 or Ar and H2 are mixed to obtain mixed gas; the mixed gas is introduced to a gas-solid reaction chamber; the reaction chamber is divided into two regions; a solid selenium(sulphur) sublimation region ensures that H2/N2 (or H2/Ar) gas and selenium(sulphur) steam are mixed; a hot wire catalytic gas-solid reaction region ensures that H2 and the selenium(sulphur) steam react to generate gaseous H2Se/Se(or H2S/S) mixed atmosphere; and the mixed atmosphere and the Cu metal prefabricated layer, the In metal prefabricated layer and the Ga metal prefabricated layer have thermal selenizing reaction and/or vulcanizing reaction.

The invention relates to a sodium-potassium co-doping technology for preparing a high-efficiency copper indium gallium selenide solar cell. The copper indium gallium selenide (CIGS for short) thin film solar cell becomes a solar cell technique with the most development potential due to various advantages. During the preparation process of the CIGS solar cell, the photoelectric conversion efficiency of the cell can be improved by doping of alkali metal ions. The patent proposes a novel technology, sodium ions and potassium ions are co-doped in a CIGS absorption layer, and thus, the photoelectric conversion efficiency of the CIGS solar cell is further improved. The patent also proposes four technical schemes to achieve co-doping of the sodium ions and the potassium ions, and the four technical schemes are suitable for different CIGS absorption layer deposition technologies.