Method for preparing light absorption layer of CIGS (copper indium gallium selenide) thin film solar cell by magnetron sputtering method

A technology for thin-film solar cells and light-absorbing layers, applied in sputtering plating, coatings, circuits, etc., can solve problems such as large differences, changes, difficult control of film uniformity and repeatability, etc., and achieve high-quality and uniform film quality The effect of good performance and simple process

Active Publication Date: 2010-07-07
山东中科泰阳光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods inevitably produce volatile mesophases (such as In 2 Se, In 4 Se 3 , InSe and In 6 Se 7 etc.), so that the final actual composition of the film is very different from the nominal composition; and because the formation and volatilization speed of the volatile mesophase are closely related to factors such as temperature, air pressure, partial pressure of volatile substances and surface airflow state

Method used

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  • Method for preparing light absorption layer of CIGS (copper indium gallium selenide) thin film solar cell by magnetron sputtering method
  • Method for preparing light absorption layer of CIGS (copper indium gallium selenide) thin film solar cell by magnetron sputtering method
  • Method for preparing light absorption layer of CIGS (copper indium gallium selenide) thin film solar cell by magnetron sputtering method

Examples

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Effect test

Embodiment 1

[0042] Preparation of CIGS precursor thin film: on molybdenum-coated soda lime silica glass, with Cu 0.9 In 0.8 Ga 0.2 Se 1.95 As a target, the CIGS precursor film was prepared by radio frequency sputtering, and the sputtering power density was 1.2Wcm -2 , the target distance is 7cm, the working pressure is 1.2Pa; the thickness of the prepared CIGS precursor film is 1200nm, due to the difference of element sputtering rate, in the prepared CIGS precursor film Cu / (In+Ga)=0.86, Ga / (In+Ga) = 0.20.

[0043] Heat treatment of CIGS precursor film: In 30000Pa nitrogen, heat the solid elemental Se source to 230°C to form the saturated vapor pressure of Se, place the CIGS precursor film in the saturated Se vapor pressure, and heat the CIGS at a heating rate of 30°C / min. The precursor film is heated to 530° C. and kept for 30 minutes to prepare the desired CIGS light-absorbing layer.

Embodiment 2

[0045] Preparation of CIGS precursor film: on a molybdenum-coated ceramic plate, with Cu 0.7 In 0.6 Ga 0.4 Se 1.85 As a target, the CIGS precursor film was prepared by radio frequency sputtering, and the sputtering power density was 0.2Wcm -2 , the target distance is 4cm, the working pressure is 0.05Pa; the thickness of the prepared CIGS precursor film is 500nm, due to the difference of element sputtering rate, in the prepared CIGS precursor film, Cu / (In+Ga)=0.67, Ga / (In+Ga) = 0.40.

[0046] Heat treatment of CIGS precursor film: In 100000Pa nitrogen, heat the solid elemental Se source to 180°C to form the saturated vapor pressure of Se, place the CIGS precursor film in the saturated Se vapor pressure, and heat the CIGS at a heating rate of 10°C / min. The precursor film is heated to 450° C. and kept for 60 minutes to prepare the desired CIGS light-absorbing layer.

Embodiment 3

[0048] Preparation of CIGS precursor film: on molybdenum-coated stainless steel foil, with Cu 0.5 In 0.3 Ga 0.7 Se 1.75 As a target, the CIGS precursor film was prepared by radio frequency sputtering, and the sputtering power density was 3.0Wcm -2 , the target distance is 10cm, the working pressure is 5Pa; the thickness of the prepared CIGS precursor film is 1500nm, due to the difference of element sputtering rate, in the prepared CIGS precursor film, Cu / (In+Ga)=0.49, Ga / ( In+Ga) = 0.70.

[0049] Heat treatment of CIGS precursor film: In 10000Pa nitrogen, heat the solid elemental Se source to 350°C to form the saturated vapor pressure of Se, place the CIGS precursor film in the saturated Se vapor pressure, and heat the CIGS at a heating rate of 50°C / min. The precursor film is heated to 500° C. and kept for 30 minutes to prepare the desired CIGS light-absorbing layer.

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Abstract

The invention relates to a preparation method of a light absorption layer film of a CIGS (copper indium gallium selenide) solar cell, which is characterized by comprising the following steps of: preparing a CIGS precursor thin film which has high reactivity and can be subjected to fast reaction sintering by a magnetron sputtering method on a bottom electrode through simple target sputtering and copper-enriching target and copper-lacking target sputtering simultaneously or sequentially; and then, carrying out heat treatment on the CIGS precursor thin film for fast reaction to generate a smooth, compact and uniform CIGS solar cell light absorption layer thin film with excellent photoelectric properties. The preparation method provided by the invention has the advantages of strong controllability, high thin film quality, good thin film uniformity and simple processes and is suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing a copper indium gallium selenide (CIGS) thin-film solar cell light-absorbing layer. More precisely, a CIGS precursor film is prepared by magnetron sputtering, and then heat-treated to form a solar cell light-absorbing layer, which belongs to the new generation of photovoltaic materials. field of energy technology. Background technique [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cells is the most promising new generation of solar cells, it has many advantages such as low cost, high efficiency, long life, good low light performance, strong radiation resistance, flexibility and environmental friendliness. Since the 1990s, CIGS has been the thin-film solar cell with the highest conversion efficiency in the laboratory among all thin-film solar cells. In April 2008, the US Renewable Energy Laboratory (NREL) refreshed the highest conversion efficiency of its la...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/54H01L31/18
CPCH01L31/0322C23C14/5866Y02E10/50C23C14/185Y02E10/541
Inventor 黄富强王耀明朱小龙李爱民张雷
Owner 山东中科泰阳光电科技有限公司
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