Method for preparing novel conductive indium tin oxide material and film thereof
A conductive oxidation, indium tin oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of low light transmittance, unfavorable use of flexible substrates, and poor electrical properties of low-temperature coatings And other issues
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0022] A method for preparing a new type of conductive indium tin oxide thin film adopts a multi-layer structure design. Firstly, a glass substrate, a pure silver target and indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 20nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2) Thin film, the second layer of 10nm thick pure silver film, the third layer of 20nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / Ag / ITiO multilayer film structure, then use a visible spectrometer to measure the light transmittance, and use a four-point p...
Embodiment 2
[0024] A method for preparing a new type of conductive indium tin oxide thin film adopts a multi-layer structure design. Firstly, a glass substrate, a pure silver target and indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 45nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2)Thin film, the second layer of 10nm thick pure silver film, the third layer of 45nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / Ag / ITiO multilayer film structure, then use a visible spectrometer to measure the light transmittance, and use a four-point pr...
Embodiment 3
[0026] A method for preparing a new type of conductive indium tin oxide thin film adopts a multilayer structure design. Firstly, a glass substrate, a pure silver titanium (Ag-0.5Ti) target material and an indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 20nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2) Thin film, the second layer of 10nm thick silver titanium (Ag-0.5Ti) thin film, the third layer of 20nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / AgTi / ITiO multilayer film structure, then use a visible spectrometer to me...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com