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Method for preparing novel conductive indium tin oxide material and film thereof

A conductive oxidation, indium tin oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of low light transmittance, unfavorable use of flexible substrates, and poor electrical properties of low-temperature coatings And other issues

Inactive Publication Date: 2014-01-15
YANCHUANG APPLIED MATERIALS GANZHOU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the development of large-scale touch screens, LCD TVs and CIGS thin-film solar cells, the conductivity and light transmittance of transparent conductive films (TCO) in large areas are the key, and the light transmittance and electrical properties of TCO affect the battery to a certain extent The conversion efficiency and the response rate of the touch screen, the traditional ITO has gradually been unable to meet the needs of large-scale products in high light transmission and low power group
Moreover, at present, indium oxide series transparent conductive films still have problems such as low transmittance in visible light and long-wavelength regions and poor electrical properties of low-temperature coatings, which require heat treatment to obtain better electrical properties.
Since the traditional ITO (90% indium oxide) material needs to be coated at a higher temperature to achieve better electrical properties, it is not conducive to the use of flexible substrates

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for preparing a new type of conductive indium tin oxide thin film adopts a multi-layer structure design. Firstly, a glass substrate, a pure silver target and indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 20nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2) Thin film, the second layer of 10nm thick pure silver film, the third layer of 20nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / Ag / ITiO multilayer film structure, then use a visible spectrometer to measure the light transmittance, and use a four-point p...

Embodiment 2

[0024] A method for preparing a new type of conductive indium tin oxide thin film adopts a multi-layer structure design. Firstly, a glass substrate, a pure silver target and indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 45nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2)Thin film, the second layer of 10nm thick pure silver film, the third layer of 45nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / Ag / ITiO multilayer film structure, then use a visible spectrometer to measure the light transmittance, and use a four-point pr...

Embodiment 3

[0026] A method for preparing a new type of conductive indium tin oxide thin film adopts a multilayer structure design. Firstly, a glass substrate, a pure silver titanium (Ag-0.5Ti) target material and an indium tin oxide (In2O3+3%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 20nm thick indium tin oxide with DC power supply sequence (In2O3+3%SnO2) Thin film, the second layer of 10nm thick silver titanium (Ag-0.5Ti) thin film, the third layer of 20nm thick indium tin oxide (In2O3+3%SnO2) Thin film, that is to form the required Glass / ITiO / AgTi / ITiO multilayer film structure, then use a visible spectrometer to me...

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Abstract

The invention aims at providing a method for preparing a novel conductive indium tin oxide material and a film of the material. In the process that a novel indium tin oxide film is prepared, an indium tin oxide film with high light transmittance and a titanium element is initially used, and the design of a multi-layer film structure of a sandwich shape is formed with the combination of a silver or silver alloy film in the middle layer is utilized, so that the resistance of the film is greatly reduced under appropriate thickness control, the high visible light transmittance of the film is maintained, the applicability of the indium tin oxide film in a film photo battery such as a touch control screen and a CIGS (Copper Indium Gallium Selenide) is improved, and the production requirements are met. As the film is applicable to low-temperature (less than 150 DEG C) film plating, the film can be applied to a glass base material or a flexible PET (Polyethylene Glycol Terephthalate) base material, and the application range is widened. The resistance can be reduced to be less than 5*10<-5>omega cm, and the light transmittance can reach more than 90%.

Description

technical field [0001] The invention relates to a method for preparing a novel conductive indium tin oxide material and a thin film thereof, belonging to the application fields of thin-film photovoltaic cells, liquid crystal televisions and touch screens. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is becoming increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, touch screens, semiconductors, and solar energy, a new functional material—transparent conducting oxide (TCO film for short)—is produced and developed. The so-called transparent conductive film refers to a film material with a light transmittance of more than 80% in the range of visible light, high conductivity, and a specific resistance value lower than 1x10 -3 Ω.cm. It is known ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/14B22F3/22
Inventor 黄信二
Owner YANCHUANG APPLIED MATERIALS GANZHOU CO LTD
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