Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

1637 results about "Specific resistance" patented technology

Specific Resistance is the inherent property of a material… It is defined as “ the resistance offered per unit length and unit cross sectional area of that material when a known quantity of voltage is applied at its end”….

Graphene blend regenerated cellulose fiber and preparation method thereof

The invention relates to a graphene blend regenerated cellulose fiber. The graphene blend regenerated cellulose fiber is prepared by mixing an oxidized graphene solution and a regenerated cellulose solution, molding a mixture through a viscose wet spinning process and reducing the mixture; the dry breaking strength of the graphene blend regenerated cellulose fiber is not less than 1.8 cN/dtex, the wet breaking strength of the graphene blend regenerated cellulose fiber is not less than 0.9 cN/dtex, the dry breaking elongation of the graphene blend regenerated cellulose fiber is not less than 16%, the mass specific resistance of the fiber is 1-9X106 omega.g/cm2, and the thermal decomposition temperature of the fiber is not lower than 400 DEG C; and with the regenerated cellulose fiber as a matrix, the prepared graphene blend regenerated cellulose fiber has the advantages of good moisture absorption, good air permeability, soft handle and good dyeing performance and has the characteristics of ultrahigh strength, thermal conductivity, electric conductivity, antibacterial property and the like of the graphene; the conductive and thermal properties of the fiber are both improved by being compared with those of the traditional regenerated cellulose fiber; the antibacterial property of the fiber is additionally provided; and the graphene blend regenerated cellulose fiber provided by the invention has the advantages of simple production process, easiness in operation, and higher yield. People estimate that the developed graphene blend regenerated cellulose fiber can be widely applied to the field of costumes, industrial textiles and the like.
Owner:JINAN SHENGQUAN GROUP SHARE HLDG +1

Spray evaporation treatment method of wet method flue gas desulfurization wastewater in thermal power station

The invention discloses a spray evaporation treatment method of the wet method flue gas desulfurization wastewater in a thermal power station. In the method, an atomizing nozzle is arranged in the region with the temperature at 413-470 K and the flue gas speed of 5-11 m/s in a flue of the boiler tail part; desulfurization wastewater is pumped by utilizing a water pump, air is compressed by a compressor, and the pressure ratio of the compressed air to the desulfurization wastewater entering into the atomizing nozzle is 0.25-0.6; the speed of liquid droplets atomized by the atomizing nozzle is 50-80 m/s, and particle diameters of the liquid droplets are less than 50 mu m; and the liquid droplets are evaporated and then exhausted out of a chimney together with the flue gas. The invention can save chemical drugs utilized in the conventional wastewater treatment method; overcome the defects of many apparatuses, large investment, high running cost and heavy apparatus repair and maintenance load of a wastewater treatment system in the prior art, overcome the great corrosion influence of chlorine ions in water meta-acidity environment, reduce the specific resistance of ashes in a dust collector and improve the dust collector efficiency through increasing the flue gas humidity and properly lowering the flue gas temperature.
Owner:WUHAN TIANHE TECH

High evenness negative temperature coefficient heat-sensitive resistance material and its preparation method

The utility model relates to a thermistance material with high uniformity and negative temperature coefficient. The main formulation is one in the six systems of Mn-Ni-Cu, Mn-Co-Cu, Mn-Co-Ni-Cu, Mn-Co-Fe-Cu, Mn-Co-Ni or Mn-Co-Fe. The combination of at least two of the oxides as CaO, ZnO, SiO2, Al2O3, Fe2O3, MgO, Cr2O3, TiO2, Sb2O3, Bi2O3, SrO, Nb2O5 and B2O3 are added to the main formulation. The utility model also relates to a preparation method for preparing the thermistance material with high uniformity and negative temperature coefficient, comprising the following steps: mixture making, primary wet milling, drying, calcining, and secondary wet milling, drying and granulating, pressing and forming, and sintering. The utility model has the advantages that: the thermistance material with negative temperature coefficient (NTCR) made by the method has high uniformity and high repeatability; the specific resistance uniformity of the same batch material is all better than plus or minus 1%; the specific resistance error of different batches does not exceed plus or minus 2%; the error of value B does not exceed plus or minus 1%; the utility model is suitable for mass and large-scale production.
Owner:山东中厦电子科技有限公司

Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process

The invention discloses a method for controlling the specific resistance of gallium-doping Czochralski silicon in the crystal growth process, which comprises the following steps: melting multi-crystalsilicon in vacuum or under the protection of argon, melting gallium in the silicon solution to form a gallium-doping silicon solution, and growing the single crystal of the Czochralski silicon; in the crystal growth process, when the specific resistance of the crystal is 1.2-1.0 omega cm, doping the n type dopant-phosphorus with certain concentration in the residual gallium-doping silicon solution to form a phosphorus and gallium-doped silicon solution for continuously growing, and enabling the specific resistance of the crystal to be regulated to 3.0 omega cm again; and when the curing ratioof the crystal reaches 80-90%, stopping the growth. The phosphorus doping process in the residual gallium-doped silicon solution can be carried out many times. The invention can control the specificresistance of the back half part of the single crystal of the gallium-doped Czochralski silicon in the range of 1-3 omega cm to be favorable for increasing the utilization ratio of silicon materials in the process of preparing high-efficiency solar batteries, thus the manufacturing cost of the high-efficiency batteries is greatly reduced, and the method has simple operation and can be easily applied to the photovoltaic industry in a large scale.
Owner:ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products