27 results about "Specific resistance" patented technology

The invention belongs to the technical field of surface engineering, and relates to a preparation method of a protective coating for a metal connector of a solid oxide battery. A compact transition metal oxide inner layer is deposited on a metal substrate in a reactive sputtering mode, then a transition metal alloy outer layer is deposited in a metal sputtering mode, a transition metal oxide / transition metal alloy composite coating is formed, and a spinel protective layer is formed after annealing treatment. According to the method, a transition metal oxide inner layer is used as a diffusion barrier layer, diffusion of elements such as Cr from a substrate to a coating and diffusion of oxygen to the substrate in the high-temperature annealing and long-term service process are effectively inhibited, and therefore the thickness of a reaction layer and the thickness of a thermal growth oxide layer are remarkably reduced. The composite coating is compact in structure, stable in component, good in matching with the thermal expansion coefficient of the substrate, excellent in oxidation resistance and low in surface specific resistance, and capable of effectively improving the long-term operation stability and prolonging the service life of the SOC connector.

An electric discharge machine includes an electric discharge machining unit that performs electric discharge machining on a workpiece in a machining liquid, and a filter that removes sludge contained in the machining liquid, and in a case where the workpiece is made of an aluminum-based material, the electric discharge machining is performed using a machining liquid whose specific resistance value becomes a prescribed value or less by adding an agent, the prescribed value being a value of 30,000 [Ωcm] or less.

This utility model relates to the field of resistor technology, specifically to a resistor tube with overlapping wiring, comprising an insulated support tube and a resistor strip spirally wound around the support tube. The resistor strip is an exposed metal strip, comprising integrally formed, continuously bent, alternately bent main body segments and connecting segments. The main body segments maintain a straight shape due to their own strength, while the connecting segments are arc-shaped. Adjacent main body segments are connected via the connecting segments and arranged in a V-shape. Multiple positioning grooves are formed on the outer side of the support tube, and the middle of each main body segment overlaps and is embedded in the positioning grooves. The elasticity of the connecting segments clamps adjacent main body segments tightly against the support tube. Compared with existing technologies, the resistor strip is directly exposed to air for heat dissipation, resulting in higher power density. It eliminates the need for the outer shell and magnesium oxide insulating powder of existing load resistor tubes, reducing the influencing factors of insulation and failure issues. It eliminates the need to consider the high-temperature insulation failure of magnesium oxide powder and problems caused by shell corrosion.

The present invention provides a ceramic composition capable of suppressing chipping during barrel polishing, cracks during heat press bonding, plating extension, and high specific resistance. The ceramic composition of the present invention contains Fe, Cu, Zn, Ni, Mn, Nb, and V, and when Fe, Cu, Zn, and Ni are converted into Fe2O3, CuO, ZnO, and NiO, respectively, and the total amount of Fe2O3, CuO, ZnO, and NiO is set to 100 mol%, Fe converted into Fe2O3 is contained in an amount of 46.70 mol% to 49.70 mol%, Cu converted into CuO is contained in an amount of 4.00 mol% to 7.50 mol%, Zn converted into ZnO is contained in an amount of 7.00 mol% to 33.50 mol%, and the remaining portion is Ni, Mn converted into Mn2O3 is contained in an amount of 300 ppm to 10,000 ppm, Nb converted into Nb2O5 is contained in an amount of 2 ppm to 30 ppm, and V converted into V2O5 is contained in an amount of 10 ppm to 60 ppm, with respect to 100 parts by weight of the total amount of Fe2O3, CuO, ZnO, and NiO.

A system for designing a three-dimensional electrode structure according to one embodiment of the present application can include a structure forming section configured to form a CBD structure using first design parameters input for a conductive material and a binder (CBD) structure, and to form an electrode structure using second design parameters input for the electrode structure; a calculation section configured to calculate an effective conductivity of the CBD structure using an inherent conductivity of the conductive material and an inherent conductivity of the binder, to calculate an effective conductivity of the electrode structure using an inherent conductivity of an active material, an inherent conductivity of a CBD particle, and an inherent conductivity of a current collector, and to calculate a calculated resistivity of the electrode structure by converting the effective conductivity of the electrode structure into an inverse; a correction section configured to calculate a deviation by comparing a calculated specific resistance with a target resistance, and to correct a variable or a shape of the electrode structure to minimize the deviation; and an inverse section configured to calculate the inherent conductivity of the active material, the inherent conductivity of the CBD particle, the inherent conductivity of the current collector, and third design parameters, all of which are included in the corrected electrode structure.

The application provides a special mold for preparing a large-size nanofiller hybrid film, which solves the core defects that a conventional small-size circular mold cannot prepare a large-size film and film forming is uneven through rectangular large-size structure design, uniform hole layout and fine surface treatment; and a special preparation method is matched to realize accurate control of the film resistance and to prepare a multi-resistance series product. The two work together to stably prepare a specific resistance nanohybrid film with an effective forming size of 1022 mm*50 mm and uniform thickness, effectively meet the strict use requirements of high-end fields such as aviation electromagnetic shielding, lightning protection and conductive deicing, and auxiliary realization of industrialized preparation of the large-size nanohybrid film by the vacuum filtration method.

The invention discloses a MnCo2O4 / Co3O4 coating for a solid oxide fuel cell (SOFC) connector and a preparation method of the MnCo2O4 / Co3O4 coating, and belongs to the technical field of SOFC key component coatings. The coating is of a double-layer oxide skin structure, the inner layer is a Cr2O3 layer, the outer layer is a MnCo2O4 / Co3O4 composite layer, and the coating is prepared on the surface of an SUS 430 steel base material through a two-step electrodeposition and high-temperature oxidation process. The preparation method comprises the following four steps: pre-treating the base material; carrying out electro-deposition on the MnO2 nanosheet layer in the first step; carrying out electro-deposition on the Co layer in the second step; and carrying out high-temperature oxidation conversion in an air atmosphere of 800 DEG C. After the prepared coating is oxidized at 800 DEG C for 5 weeks, the surface specific resistance (ASR) is 4.97 m omega.cm < 2 >, the oxidation parabola rate constant kp is 0.0306 mg < 2 >. Cm <-4 >. Week <-1 >, and the coating has excellent high-temperature oxidation resistance, high conductivity and Cr volatilization inhibition capacity; and the preparation process is simple and controllable, low in cost and suitable for large-scale production, and can be widely applied to performance improvement of the medium-temperature SOFC connector.

To provide a specific resistance measuring device and a banking evaluation method capable of preventing an electrode from being damaged.SOLUTION: This specific resistance measuring instrument includes an electrode-housing part 5 for housing potential electrodes and current electrodes, and a traveling body 3 having a plurality of rolling body 3b parts for supporting the electrode-housing part 5 and rolling on the banking S, and traveling along a traveling direction D1 part together with the electrode-housing part 5 in the banking S. The electrode-housing part 5 has a bottom part side 5b in contact with the banking S, and an inclined part side 5b extending obliquely upward from an end part on the D1 side in the advancing direction of the bottom part side 5c. The end portion of the inclined portion 5c on the traveling direction D1 side is located on the side opposite to the traveling direction D1 with respect to the end portions of the plurality of rolling elements 3b on the traveling direction D1 side.SELECTED DRAWING: Figure 5

Interconnect resistance in hybrid junction structures can be controlled and designed. The resistance of each interconnect can be controlled by the via width, the number of vias, and the thickness of the liner within the vias. The first and second interconnects of a hybrid junction structure may have different interconnect resistances, even though they are on the same wafer or chip. The techniques described herein include designing interconnects and forming interconnects with specific resistances.

To provide a termination resistor that achieves both high-frequency characteristics and a low profile, and can be mounted on a circuit board as a chip. [Solution] The terminating resistor 11 is a resistor set to a specific resistance value of 10 to 200 Ω. The terminating resistor 11 comprises a resistive layer 12 having a first surface 12a and a second surface 12b on the opposite side of the first surface 12a, a first electrode layer 13 laminated on the first surface 12a of the resistive layer 12, and a second electrode layer 14 laminated on the second surface 12b of the resistive layer 12. The resistive layer 12 is made of a resistive material having a resistivity ρ of 0.5 to 4.0 Ωcm.

To provide a probe for measuring ground specific resistance capable of more surely measuring the specific resistance of the ground and improving durability against friction or the like.SOLUTION: This ground specific resistance measuring probe 1 has a probe body 20 having a cylinder part 201 and a columnar part 202, a push rod 30, a piston part 40 connected to the lower end of the push rod 30, and an electrode 60 fixed only to the piston part 40. When the push rod 30 is pushed downward, the piston portion 40 moves downward in the cylinder portion 201, and the tip of the electrode 60 protrudes outward from the side surface of the columnar portion 202.SELECTED DRAWING: Figure 4

1. The name of the design product: sludge specific resistance determination experimental device. 2. The use of the design product: sludge specific resistance determination experimental device. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view. 5. The bottom of the design product is the part that is not easy to see or cannot be seen during use, and the top view is omitted.

The invention relates to a resistor (1), in particular a snubber shunt (1) for damping voltage peaks, comprising a resistor element (9) made of a resistor material, wherein the resistor element (9) has a meandering course with at least one deflection region (12) in which the current flow direction is deflected. According to the invention, the resistor element (9) consists, in the deflection region (12), at least partly of a conductor material (e.g. copper) which has a greater specific electrical conductivity than the resistor material such that the current-carrying cross-section of the resistor element (9) in the deflection region (12) consists at least partly of the conductor material.

A susceptor (1) for manufacturing a semiconductor device has a disk shape in which a first surface (1a) and a second surface (1b) made of single crystal silicon or polycrystalline silicon are parallel to each other, and the specific resistance value is preferably 10 Ω·cm or less. One or more recesses (2) for accommodating substrates subject to processing are formed in a substrate mounting surface (1a) of the first surface. The warpage measured on the substrate mounting surface side is preferably 20 μm or less, and the warpage is preferably formed in a direction in which the substrate mounting surface (1a) bulges.

A method of forming an electrode of a semiconductor device according to an embodiment of the present disclosure comprises the steps of: performing n times of a ruthenium layer forming cycle including a step of ejecting a ruthenium-containing precursor to form a ruthenium layer on a substrate; and forming a metal layer on the ruthenium layer by performing m times of a metal layer forming cycle including a step of spraying a metal-containing precursor, in which the ruthenium layer forming cycle and the metal layer forming cycle are performed in sequence, or the ruthenium layer forming cycle and the metal layer forming cycle are performed and repeated in sequence twice or more. Therefore, according to an embodiment of the present disclosure, when forming an electrode including a ruthenium layer and a copper layer, an adhesive force between the ruthenium layer and the copper layer may be improved. Accordingly, peeling or separation of the copper layer from the ruthenium layer can be suppressed or prevented. Therefore, the specific resistance of the electrode can be reduced, and the conductivity can be improved.

The invention belongs to the technical field of direct-current resistance boxes, and particularly relates to a high-precision standard resistance box for temperature measurement and a use method, and the high-precision standard resistance box comprises a four-pole 24-throw switch, a section of high-conductivity metal wire and 23 independent resistors; the four-pole 24-throw switch comprises four poles, each pole comprises a gear shifting operation part, a movable contact and 24 static contacts with serial numbers, the high-conductivity metal wire and 23 independent resistors are in common serial numbers, and the 23 independent resistors have specific resistance values respectively; the high-conductivity metal wire and the 23 independent resistors are electrically connected with same-number static contacts on a first pole, a second pole, a third pole and a fourth pole of the four-pole 24-throw switch respectively through a four-wire system connection method; and the movable contacts on the first pole, the second pole, the third pole and the fourth pole are electrically connected with a box positive current terminal, a box positive voltage terminal, a box negative voltage terminal and a box negative current terminal respectively. According to the technical scheme, the resistance value is high in precision and good in stability.

To lower the specific resistance value of a treating liquid without using a carbon dioxide gas cylinder.SOLUTION: The fluid mixing system 1 is connected to an air supply source 2 for supplying air 3, and is connected to a separation means 10 for separating the air 3 supplied from the air supply source 2 into nitrogen 4 and a residual part 5 other than the nitrogen 4, and a pure water supply source 6. The substrate processing apparatus includes a fluid mixing part 20 for mixing the residual part 5 separated by the separation means 10 with pure water 7 supplied from a pure water supply source 6, and a processing liquid supply pipe 24 for supplying the pure water 7 mixed with the residual part 5 through the fluid mixing part 20 to a processing device 100,200 as a processing liquid 8 to be used when performing predetermined processing to an object.SELECTED DRAWING: Figure 1

A system for designing a three-dimensional electrode structure, according to one embodiment of the present invention, may comprise: a structure forming unit that forms a conductive additive and binder (CBD) structure using a first design parameter inputted for the CBD structure, and forms an electrode structure using a second design parameter inputted for the electrode structure; a calculation unit that calculates an effective electrical conductivity of the CBD structure using an intrinsic electrical conductivity of a conductive additive and an intrinsic electrical conductivity of a binder, calculates an effective electrical conductivity of the electrode structure using an intrinsic electrical conductivity of an active material, an intrinsic electrical conductivity of CBD particles, and an intrinsic electrical conductivity of a current collector, and calculates a specific resistance of the electrode structure by converting the effective electrical conductivity of the electrode structure into a reciprocal value; a correction unit that calculates a deviation by comparing the calculated specific resistance with a target specific resistance, and corrects a variable or shape of the electrode structure so as to minimize the deviation; and a backtracking unit that calculates an intrinsic electrical conductivity of the active material, an intrinsic electrical conductivity of the CBD particles, an intrinsic electrical conductivity of the current collector, and a third design parameter for the corrected electrode structure.

This PFAS detoxification system comprises: a flow path for a waste liquid containing PFAS discharged from a semiconductor fabrication device; one or a plurality of measuring instruments disposed on the flow path to measure the concentration of PFAS contained in the waste liquid; and a control unit. The measuring instrument measures the concentration of PFAS by measuring the pH or the specific resistance value of the waste liquid, and the control unit executes processing in accordance with the concentration of PFAS measured by the measuring instrument.

The utility model relates to the technical field of resistors, in particular to a laminated winding resistor with high heat dissipation performance, which comprises a plurality of laminated resistor units, each resistor unit comprises a support frame and a plurality of resistor tubes, the periphery of each support frame is enclosed, the upper and lower parts of each support frame are open, and the resistor tubes are arranged in the support frames. Each resistor tube comprises an insulating supporting tube and a resistor strip spirally wound outside the supporting tube, the resistor strip is an exposed metal strip, the resistor strip comprises a main body section and a connecting section which are integrally and continuously bent and are sequentially alternated, the main body section is kept in a linear shape by virtue of the strength of the main body section, and the connecting section is in an arc shape. Every two adjacent main body sections are connected through a connecting section and are arranged in a V shape; a plurality of positioning grooves are formed in the outer side of the supporting pipe, the middle of each main body section is lapped and embedded in the corresponding positioning groove, and the supporting pipe is clamped by the two adjacent main body sections through the elasticity of the connecting section. Compared with the prior art, the resistor strip directly exposes air for heat dissipation, and the power density is higher.

The invention relates to the field of materials science and concerns a method for generating magnetic fields with high magnetic flux densities, such as those used in magnetic resonance tomography. The object of the present invention is to provide a method for generating magnetic fields with high magnetic flux densities, in particular for static or continuous magnetic fields. The problem is solved by a method in which at least one conductor is arranged in a space in which the temperatures are lowered towards 0 K, and wherein the conductor consists at least predominantly of a metal or a metal alloy, and the respective metal or metal alloy has a specific electrical resistance which decreases by at least 90% when the temperature is lowered towards 0 K, and at the same time has a thermal conductivity which increases at least twice as much when the temperature is lowered towards 0 K.

This invention provides a calibration device for an online track insulation resistance testing device. It simulates the actual online operation of a track by setting two simulated tracks, with a gap between them to replicate the structure of a track insulation joint. A resistor box assembly connects the two simulated tracks, providing a specific resistance value between them during calibration. The device acquires the measurement results from the online track insulation resistance testing device through a central control test bench assembly. Based on the measurement results and the resistance value provided by the resistor box assembly, the error value of the online track insulation resistance testing device is analyzed. Calibration is then performed based on this error value. This device offers advantages such as high integration, convenient operation, and resistance to human error, thus solving the technical problems in existing technologies.

Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region comprises a cavity comprising a flight of stairs. A lining has a specific resistance of at least 1×104 ohm·m at 20° C. atop treads of the stairs of the flight of stairs. Individual of the treads comprise conducting material of one of the conductive tiers. The lining comprises at least one of (a), (b), (c), and (d), where: (a): M1xM2yOz having a specific resistance of at least 1×104 ohm·m at 20° C. and where M1 and M2 are each a different one of Hf, Zr, Al, Ta, Sc, and Y; “z” is greater than zero; and at least one of “x” and “y” is greater than zero; (b) BtCwOv having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “t” and “v” is greater than zero (c): BrCs having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “r” and “s” is greater than zero; and (d): BkChNp having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “k” and “p” is greater than zero. Insulative material in the cavity is directly above the lining that comprises the at least one of the (a), the (b), the (c), and the (d). Conductive vias extend through the insulative material and the lining that comprises the at least one of the (a), the (b), the (c), and the (d). Individual of the conductive vias are directly above and directly against the conducting material of one of the individual treads. Methods are disclosed.

It has been proposed to use pseudo-alloy coating technology to increase the electrical resistance of the sprayed layer. This technology involves feeding two wires made of dissimilar metals into the spray head of a metallizer. After melting the wires in an arc and subsequent spraying, a coating is formed containing uniformly distributed particles of these dissimilar metals, with their volume ratio proportional to the ratio of their diameters. Ensuring a high initial electrical resistance of the layer is possible only by using wires made of materials with a specific electrical resistance of more than 1.0∙10-6 Ohm∙m.

The present application relates to a sorting method of conductive particles, a circuit connecting material, a connecting structure and a manufacturing method thereof, and a conductive particle. The sorting method of the conductive particles includes a process of determining whether a metal constituting an outermost layer of the conductive particle satisfies a first condition, and a process of determining whether the conductive particle satisfies a second condition, and the conductive particle satisfying both the first condition and the second condition is determined as good, the first condition: the electrical conductivity at 20°C is less than or equal to 40 x 10 6 S / m, and the second condition: the volume specific resistance when a load of 2 kN is applied is less than or equal to 15 mΩcm.

This application discloses a level conversion circuit, its configuration method, and an electrical device, belonging to the field of high-speed communication technology. The level conversion circuit includes: a first transistor, a second transistor, an impedance network, and an output resistor. The base of the second transistor is connected to the collector of the first transistor. The resistance values ​​of each resistor in the impedance network are determined based on the first amplification factor of the first transistor and a first mapping relationship. The resistance value of the output resistor is determined based on the second amplification factor of the second transistor, a second mapping relationship, and the first mapping relationship. The level conversion circuit provided in this application realizes the conversion between input and output levels through the first and second transistors. Simultaneously, by determining the specific resistance values ​​of each resistor in the circuit, the signal quality during the conversion process between the first and second transistors is ensured, thereby improving the communication efficiency of the level conversion circuit.

A sensor element (100) for non-contact temperature measurement is proposed, comprising: - at least one carrier (2); - at least one first functional layer (7a) for non-contact temperature measurement of an object, and at least one second functional layer (7b) for contact measurement of ambient temperature; - at least one upper electrode (50), wherein a first contact region (c1) is formed between the upper electrode (50) and one of the two functional layers (7a, 7b); - at least one lower electrode (40), wherein a second contact region (c2) is formed between the lower electrode (40) and the functional layers (7a, 7b) that contact the upper electrode (50), wherein the respective functional layers (7a, 7b), at least one upper electrode (50), and at least one lower electrode (40) are designed and configured such that a specific resistance is achieved in the sensor element (100). Furthermore, the use of the sensor element (100) is described.