90 results about "Specific resistance" patented technology

To prevent solder wetting on a resistor formed of a high specific resistance material, that can be used in the applications for large current detection.SOLUTION: A multilayer resistor includes a resistor having a plate shape and including a first flat surface and a second flat surface in a thickness direction, and a first electrode formed on the first flat surface and a second electrode formed on the second flat surface. The resistor includes a metal body formed of an electroconductive metal material, and an insulating particle formed of an insulating material. The insulating particle includes a first insulating particle with a particle diameter of 5 μm or more. At the implementation on a printed board, an end surface of the resistor is exposed and the second electrode is connected through the solder.SELECTED DRAWING: Figure 1

Provided is a cured or uncured electromagnetic wave shielding sheet with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm being impregnated with a resin and / or with the resin being laminated thereon, the sheet exhibiting a superior electromagnetic wave shielding performance with respect to millimeter waves and terahertz waves. The sheet may for example be one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin and / or with the resin being laminated thereon; or one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm, an air permeability of not larger than 0.5 cm3 / cm2·s and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin.

The invention belongs to the technical field of surface engineering, and relates to a preparation method of a protective coating for a metal connector of a solid oxide battery. A compact transition metal oxide inner layer is deposited on a metal substrate in a reactive sputtering mode, then a transition metal alloy outer layer is deposited in a metal sputtering mode, a transition metal oxide / transition metal alloy composite coating is formed, and a spinel protective layer is formed after annealing treatment. According to the method, a transition metal oxide inner layer is used as a diffusion barrier layer, diffusion of elements such as Cr from a substrate to a coating and diffusion of oxygen to the substrate in the high-temperature annealing and long-term service process are effectively inhibited, and therefore the thickness of a reaction layer and the thickness of a thermal growth oxide layer are remarkably reduced. The composite coating is compact in structure, stable in component, good in matching with the thermal expansion coefficient of the substrate, excellent in oxidation resistance and low in surface specific resistance, and capable of effectively improving the long-term operation stability and prolonging the service life of the SOC connector.

Provided are an electrolytic capacitor and a manufacturing method capable of achieving both low specific resistance electrolyte and low leakage current. An anode body comprises an anode body of a valve metal, and a powder layer which is made of a valve metal powder and is formed on the anode body. A capacitor element includes the anode body, a cathode body, a separator, and an electrolyte containing moisture. The moisture content of the capacitor element is 4 wt% to 20 wt% inclusive relative to the electrolyte. This manufacturing method comprises: an element formation step for forming a capacitor element by stacking an anode body and a cathode body with a separator interposed therebetween; an impregnation step for impregnating the capacitor element with an electrolyte containing moisture; and an adjustment step for adjusting the moisture content of the capacitor element. In the element formation step, the anode body, which is formed by forming a powder layer of valve metal powder on an anode body of a valve metal, is overlaid on the cathode body with the separator interposed therebetween. In the adjustment step, the moisture content of the capacitor element is adjusted to 4-20 wt% relative to the electrolyte.

An electric discharge machine includes an electric discharge machining unit that performs electric discharge machining on a workpiece in a machining liquid, and a filter that removes sludge contained in the machining liquid, and in a case where the workpiece is made of an aluminum-based material, the electric discharge machining is performed using a machining liquid whose specific resistance value becomes a prescribed value or less by adding an agent, the prescribed value being a value of 30,000 [Ωcm] or less.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

An image forming apparatus includes a fixing device, a power supply, and a transfer device. The fixing device includes a fixing belt grounded via a protective resistor, a heater contacting the fixing belt, and a pressure rotator grounded and facing the fixing belt to form a nip. The power supply applies an alternating current voltage to the heater. The transfer device includes a transferor grounded and an opposed rotator facing the transferor to form a nip. The transferor has a transfer resistance Rt satisfying a following expression,<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Rf / / (jXs+Rp+Rt)jXh+Rf / / (jXs+Rp+Rt)·RtjXs+Rp+Rt<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics><0.3where Rf is a resistance value of the protective resistor, Rp is a resistance value of a recording medium, jXs is an impedance of the fixing belt, and jXh is an impedance of the heater.

This utility model relates to the field of resistor technology, specifically to a resistor tube with overlapping wiring, comprising an insulated support tube and a resistor strip spirally wound around the support tube. The resistor strip is an exposed metal strip, comprising integrally formed, continuously bent, alternately bent main body segments and connecting segments. The main body segments maintain a straight shape due to their own strength, while the connecting segments are arc-shaped. Adjacent main body segments are connected via the connecting segments and arranged in a V-shape. Multiple positioning grooves are formed on the outer side of the support tube, and the middle of each main body segment overlaps and is embedded in the positioning grooves. The elasticity of the connecting segments clamps adjacent main body segments tightly against the support tube. Compared with existing technologies, the resistor strip is directly exposed to air for heat dissipation, resulting in higher power density. It eliminates the need for the outer shell and magnesium oxide insulating powder of existing load resistor tubes, reducing the influencing factors of insulation and failure issues. It eliminates the need to consider the high-temperature insulation failure of magnesium oxide powder and problems caused by shell corrosion.

The present invention provides a ceramic composition capable of suppressing chipping during barrel polishing, cracks during heat press bonding, plating extension, and high specific resistance. The ceramic composition of the present invention contains Fe, Cu, Zn, Ni, Mn, Nb, and V, and when Fe, Cu, Zn, and Ni are converted into Fe2O3, CuO, ZnO, and NiO, respectively, and the total amount of Fe2O3, CuO, ZnO, and NiO is set to 100 mol%, Fe converted into Fe2O3 is contained in an amount of 46.70 mol% to 49.70 mol%, Cu converted into CuO is contained in an amount of 4.00 mol% to 7.50 mol%, Zn converted into ZnO is contained in an amount of 7.00 mol% to 33.50 mol%, and the remaining portion is Ni, Mn converted into Mn2O3 is contained in an amount of 300 ppm to 10,000 ppm, Nb converted into Nb2O5 is contained in an amount of 2 ppm to 30 ppm, and V converted into V2O5 is contained in an amount of 10 ppm to 60 ppm, with respect to 100 parts by weight of the total amount of Fe2O3, CuO, ZnO, and NiO.

According to the invention, the synchronous machine (1) has a starting resistor, the starting resistor having an electrical conductor, the specific resistance of which differs from copper, and the starting resistor in particular having a hollow structure.

A system for designing a three-dimensional electrode structure according to one embodiment of the present application can include a structure forming section configured to form a CBD structure using first design parameters input for a conductive material and a binder (CBD) structure, and to form an electrode structure using second design parameters input for the electrode structure; a calculation section configured to calculate an effective conductivity of the CBD structure using an inherent conductivity of the conductive material and an inherent conductivity of the binder, to calculate an effective conductivity of the electrode structure using an inherent conductivity of an active material, an inherent conductivity of a CBD particle, and an inherent conductivity of a current collector, and to calculate a calculated resistivity of the electrode structure by converting the effective conductivity of the electrode structure into an inverse; a correction section configured to calculate a deviation by comparing a calculated specific resistance with a target resistance, and to correct a variable or a shape of the electrode structure to minimize the deviation; and an inverse section configured to calculate the inherent conductivity of the active material, the inherent conductivity of the CBD particle, the inherent conductivity of the current collector, and third design parameters, all of which are included in the corrected electrode structure.

An object of the present invention is to provide a probe for measuring the specific resistance of the ground, which can more reliably measure the specific resistance of the ground and improve the durability against friction and the like. 【Means for solving the problem】 The probe 1 for measuring the specific resistance of the ground includes a probe body 20 having a cylinder portion 201 and a columnar portion 202, a push rod 30, a piston portion 40 connected to the lower end of the push rod 30, and an electrode 60 fixed only to the piston portion 40. When the push rod 30 is pushed downward, the piston portion 40 moves downward in the cylinder portion 201, and the tip of the electrode 60 protrudes outward from the side surface of the columnar portion 202.

Transmission ionization chamber for the ultra-high dose range comprising at least - an outer modular housing (1a, 1b) for shielding, equipped with shielding foils for transmission of ionising radiation and an inner modular housing made of a material with a specific resistance ≥ 10 7 Ω·cm, and wherein the inner housing comprises form-fitting holders (2a, 2b) for two electrodes and - Electrodes made of metal-coated plastic foils, which are arranged electrically separated by an insulating ring (3) made of electrically insulating material arranged between the electrodes and having a thickness in a range of 0.5 mm to 1.5 mm, and wherein the electrodes and shielding foils are mounted on support rings and - a signal line and a voltage line for the electrodes as well as a ground line for the outer housing (1a, 1b) and the shielding foils.

Provided are magnetic particles used in the manufacture of a compacted powder magnetic core having a sufficiently high relative magnetic permeability and specific resistance. A magnetic particle 1 has a core 2 of a metallic magnetic material and a film 3 covering the surface of the core 2. The film 3 contains a reaction product obtained by using a first metal alkoxide that does not contain a metal atom-carbon atom bond in one molecule; and a second metal alkoxide that contains two or more metal atom-carbon atom bonds in one molecule.

To provide an electromagnetic wave shield film that covers an electronic component and a wire, mounted to an internal part of an electron device that can sufficiently exert a characteristic as an electromagnetic wave shield member by a carbon nano tube, and can be easily handled.SOLUTION: In a first electromagnetic wave shield film 1a having a five-layer structure, a resin film 3 where a specific resistance is 0.005 Ω*cm or less; a thickness is 500 μm or less; a direction where a tension strength becomes the maximum is a vertical direction; and a tension strength ratio of the vertical direction / a lateral direction where a direction vertical to the vertical direction is the lateral direction is 0.5 to 2.0 is laminated onto front and back surfaces of a carbon nanotube nonwoven fabric 2, and the first electromagnetic wave shield film has a lamination film having a total thickness of 10 to 1000 μm or an impregnation film in which a resin is impregnated into the carbon nanotube nonwoven fabric, and which has a total thickness of 10 to 1000 μm, an adhesive agent layer 4 laminated onto one surface of the lamination film or the impregnation film, and a separation type film 5 laminated onto an adhesive surface of the adhesive agent layer.SELECTED DRAWING: Figure 1A

To provide: a liquid crystal composition which satisfies at least one property out of high upper limit temperature, low lower limit temperature, small viscosity, appropriate optical anisotropy, large dielectric anisotropy, large dielectric constant in the short axis direction, large ratio of dielectric constant in the short axis direction to dielectric anisotropy, large specific resistance, high stability to light and heat, large elastic constant and the like, or has suitable balance between at least two properties; and an AM element containing the composition.SOLUTION: A liquid crystal composition contains a specific compound having large optical anisotropy as a component A, and may contain a specific compound having large dielectric anisotropy as a component B, a specific compound having small viscosity or high upper limit temperature as a component C, or a specific compound having large dielectric constant in the short axis direction as a component D.SELECTED DRAWING: None

The application provides a special mold for preparing a large-size nanofiller hybrid film, which solves the core defects that a conventional small-size circular mold cannot prepare a large-size film and film forming is uneven through rectangular large-size structure design, uniform hole layout and fine surface treatment; and a special preparation method is matched to realize accurate control of the film resistance and to prepare a multi-resistance series product. The two work together to stably prepare a specific resistance nanohybrid film with an effective forming size of 1022 mm*50 mm and uniform thickness, effectively meet the strict use requirements of high-end fields such as aviation electromagnetic shielding, lightning protection and conductive deicing, and auxiliary realization of industrialized preparation of the large-size nanohybrid film by the vacuum filtration method.

The invention discloses a MnCo2O4 / Co3O4 coating for a solid oxide fuel cell (SOFC) connector and a preparation method of the MnCo2O4 / Co3O4 coating, and belongs to the technical field of SOFC key component coatings. The coating is of a double-layer oxide skin structure, the inner layer is a Cr2O3 layer, the outer layer is a MnCo2O4 / Co3O4 composite layer, and the coating is prepared on the surface of an SUS 430 steel base material through a two-step electrodeposition and high-temperature oxidation process. The preparation method comprises the following four steps: pre-treating the base material; carrying out electro-deposition on the MnO2 nanosheet layer in the first step; carrying out electro-deposition on the Co layer in the second step; and carrying out high-temperature oxidation conversion in an air atmosphere of 800 DEG C. After the prepared coating is oxidized at 800 DEG C for 5 weeks, the surface specific resistance (ASR) is 4.97 m omega.cm < 2 >, the oxidation parabola rate constant kp is 0.0306 mg < 2 >. Cm <-4 >. Week <-1 >, and the coating has excellent high-temperature oxidation resistance, high conductivity and Cr volatilization inhibition capacity; and the preparation process is simple and controllable, low in cost and suitable for large-scale production, and can be widely applied to performance improvement of the medium-temperature SOFC connector.

A measurable electromagnetic relay including a housing (1), a PCB board (2), and two lead sheets (33, 34) extending from within the housing (1) to the outside of a first side of the housing (1) and connected to a contact assembly within the housing (1), one of the two lead sheets (33, 34), a lead sheet (33), includes a plate-shaped sampling resistive sheet (4) made of a material with high resistivity and a conductive sheet (6) connected to both ends of the sampling resistive sheet (4), and in the lead sheet (33), at the positions of both ends of the sampling resistive sheet (4), a conductive sheet (6) is connected to the both ends of the sampling resistive sheet (4) for realizing the inflow and outflow of current. The sampling resistance sheet (4) has two sampling pins (41) extending in the same direction, and the two sampling pins (41) are inserted into the PCB board (2) and connected by welding, and the sampling resistance sheet (4) has through holes (42) formed along the thickness direction of the plate body, so that a first sealing ring (S1) formed by the through holes (42) cancels out the induced current generated by the external alternating magnetic field in the sampling resistance sheet (4), the sampling pins (41) and the PCB board (2), thereby improving the anti-interference ability when the relay makes measurements in an alternating magnetic field. An electronic watt-hour meter including the above electromagnetic relay is further provided.

To provide a specific resistance measuring device and a banking evaluation method capable of preventing an electrode from being damaged.SOLUTION: This specific resistance measuring instrument includes an electrode-housing part 5 for housing potential electrodes and current electrodes, and a traveling body 3 having a plurality of rolling body 3b parts for supporting the electrode-housing part 5 and rolling on the banking S, and traveling along a traveling direction D1 part together with the electrode-housing part 5 in the banking S. The electrode-housing part 5 has a bottom part side 5b in contact with the banking S, and an inclined part side 5b extending obliquely upward from an end part on the D1 side in the advancing direction of the bottom part side 5c. The end portion of the inclined portion 5c on the traveling direction D1 side is located on the side opposite to the traveling direction D1 with respect to the end portions of the plurality of rolling elements 3b on the traveling direction D1 side.SELECTED DRAWING: Figure 5

This method for measuring the degree of carbonization of carbon felt comprises the steps of: compressing each of a first region and a second region of carbon felt at a compression rate; and applying a current to the carbon felt to measure specific resistance, wherein the first region and the second region are located on opposite sides of the carbon felt, and the compression rate may have a value in the range of 16-40%.

The purpose of the present invention is to provide a copper-silver alloy wire that can suppress the increase in conductor resistance and that has a good hardness, specific resistance, and linearity. This copper-silver alloy wire comprises: an alloy wire rod containing 0.1-30 mass% Ag, the remainder being Cu and unavoidable impurities; and a first plating layer that covers the alloy wire rod, the first plating layer containing Ag. In a cross-section perpendicular to the longitudinal direction of the copper-silver alloy wire in which the Vickers hardness is 300 HV or more, the specific resistance is 3.0 μΩ·cm or less, and the radius of curvature is 300 mm or more, the ratio of the area of the first plating layer to the total area of the cross-section is less than 5.0%.

The shunt resistor includes: the resistance body; and the electrode joined to the resistance body and made of aluminum as a main component. In addition, the shunt resistor includes the plated portion configured to cover at least the joined portions between the resistance body and the electrode the plated portion being configured of a plating having higher specific resistance than the resistance body.

Interconnect resistance in hybrid junction structures can be controlled and designed. The resistance of each interconnect can be controlled by the via width, the number of vias, and the thickness of the liner within the vias. The first and second interconnects of a hybrid junction structure may have different interconnect resistances, even though they are on the same wafer or chip. The techniques described herein include designing interconnects and forming interconnects with specific resistances.

To provide a termination resistor that achieves both high-frequency characteristics and a low profile, and can be mounted on a circuit board as a chip. [Solution] The terminating resistor 11 is a resistor set to a specific resistance value of 10 to 200 Ω. The terminating resistor 11 comprises a resistive layer 12 having a first surface 12a and a second surface 12b on the opposite side of the first surface 12a, a first electrode layer 13 laminated on the first surface 12a of the resistive layer 12, and a second electrode layer 14 laminated on the second surface 12b of the resistive layer 12. The resistive layer 12 is made of a resistive material having a resistivity ρ of 0.5 to 4.0 Ωcm.

A light-emitting device according to the present invention comprises a substrate, an interlayer insulation layer that is positioned on the substrate and has a conductive member embedded therein, a layered structure that is positioned on the interlayer insulation layer and is formed from a plurality of metal layers that are layered on each other, and a light-emitting element that is positioned on the layered structure. The plurality of metal layers include a first metal layer that includes a portion that contacts the conductive member and a second metal layer that is positioned on the first metal layer. The second metal layer has a reflection surface that reflects light from the light-emitting element toward the light-emitting element. The specific resistance of the material of the first metal layer is higher than the specific resistance of the material of the second metal layer. The reflectance of the material of the second metal layer is higher than the reflectance of the material of the first metal layer.

Provided is a bonding wire in which a coating layer having Au as a main component is provided on the surface of a core material having Ag as a main component, and which is capable of forming an FAB having a good shape and a high sphericity degree. This bonding wire (W) has a core material (10) containing Ag as a main component, and a coating layer (12) provided on the surface of the core material (10) and containing Au as a main component, the core material (10) containing one or more elements selected from Au, Pd, and In, and the ratio of the film thickness of the coating layer (12) to the diameter of the core material (10) is 0.0014-0.0048. The ratio of the intrinsic resistance of the core material (10) to the intrinsic resistance of the coating layer (12) is 85%-115%.

To provide a piezoelectric vibration piece 10 having an excitation electrode 13 formed of a crystal piece 11, a cobalt film 13a as an underlying layer provided in the front surface and the back surface of the crystal piece 11, and a metal film 13b laminated on the cobalt film, the specific resistance and the stress of the excitation electrode 13 in the piezoelectric vibration piece 10 being improved than in an existing piezoelectric vibration piece.SOLUTION: The cobalt film has a thickness in the range from 0.5 nm to 5 nm, both inclusive, preferably has a thickness in the range from 0.5 nm to 3 nm, both inclusive, and more preferably has a thickness in the range from 0.5 nm to 1 nm, both inclusive. The metal film has a thickness in the range from 10 nm to 100 nm, both inclusive, and preferably has a thickness in the range from 10 nm to 60 nm, both inclusive. A crystal piece 11 has an AT-cut crystal piece.SELECTED DRAWING: Figure 1

An object of the present invention is to provide a Cu-Ag alloy wire that has satisfactory hardness and specific resistance both suitable for probe pins. A Cu-Ag alloy wire that achieves the above object contains 0.1 to 30 mass% of Ag, with a remainder composed of Cu and unavoidable impurities. The Cu-Ag alloy wire has a Vickers hardness of 300 HV or more and a specific resistance of 3.0 µΩ·cm or less.

An electrode (1) is provided with a base film (2), a first underlayer (3), a second underlayer (4), and a conductive carbon layer (5) in this order toward one side in the thickness direction, the first underlayer (3) being a metal layer or a semimetal layer, the second underlayer (4) being a metal layer, and the specific resistance of the first underlayer (3) being 10 times or more of the specific resistance of the second underlayer (4).