46 results about "Specific resistance" patented technology

Provided is a cured or uncured electromagnetic wave shielding sheet with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm being impregnated with a resin and / or with the resin being laminated thereon, the sheet exhibiting a superior electromagnetic wave shielding performance with respect to millimeter waves and terahertz waves. The sheet may for example be one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin and / or with the resin being laminated thereon; or one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm, an air permeability of not larger than 0.5 cm3 / cm2·s and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin.

The invention belongs to the technical field of surface engineering, and relates to a preparation method of a protective coating for a metal connector of a solid oxide battery. A compact transition metal oxide inner layer is deposited on a metal substrate in a reactive sputtering mode, then a transition metal alloy outer layer is deposited in a metal sputtering mode, a transition metal oxide / transition metal alloy composite coating is formed, and a spinel protective layer is formed after annealing treatment. According to the method, a transition metal oxide inner layer is used as a diffusion barrier layer, diffusion of elements such as Cr from a substrate to a coating and diffusion of oxygen to the substrate in the high-temperature annealing and long-term service process are effectively inhibited, and therefore the thickness of a reaction layer and the thickness of a thermal growth oxide layer are remarkably reduced. The composite coating is compact in structure, stable in component, good in matching with the thermal expansion coefficient of the substrate, excellent in oxidation resistance and low in surface specific resistance, and capable of effectively improving the long-term operation stability and prolonging the service life of the SOC connector.

Provided are an electrolytic capacitor and a manufacturing method capable of achieving both low specific resistance electrolyte and low leakage current. An anode body comprises an anode body of a valve metal, and a powder layer which is made of a valve metal powder and is formed on the anode body. A capacitor element includes the anode body, a cathode body, a separator, and an electrolyte containing moisture. The moisture content of the capacitor element is 4 wt% to 20 wt% inclusive relative to the electrolyte. This manufacturing method comprises: an element formation step for forming a capacitor element by stacking an anode body and a cathode body with a separator interposed therebetween; an impregnation step for impregnating the capacitor element with an electrolyte containing moisture; and an adjustment step for adjusting the moisture content of the capacitor element. In the element formation step, the anode body, which is formed by forming a powder layer of valve metal powder on an anode body of a valve metal, is overlaid on the cathode body with the separator interposed therebetween. In the adjustment step, the moisture content of the capacitor element is adjusted to 4-20 wt% relative to the electrolyte.

An electric discharge machine includes an electric discharge machining unit that performs electric discharge machining on a workpiece in a machining liquid, and a filter that removes sludge contained in the machining liquid, and in a case where the workpiece is made of an aluminum-based material, the electric discharge machining is performed using a machining liquid whose specific resistance value becomes a prescribed value or less by adding an agent, the prescribed value being a value of 30,000 [Ωcm] or less.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

An image forming apparatus includes a fixing device, a power supply, and a transfer device. The fixing device includes a fixing belt grounded via a protective resistor, a heater contacting the fixing belt, and a pressure rotator grounded and facing the fixing belt to form a nip. The power supply applies an alternating current voltage to the heater. The transfer device includes a transferor grounded and an opposed rotator facing the transferor to form a nip. The transferor has a transfer resistance Rt satisfying a following expression,<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Rf / / (jXs+Rp+Rt)jXh+Rf / / (jXs+Rp+Rt)·RtjXs+Rp+Rt<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics><0.3where Rf is a resistance value of the protective resistor, Rp is a resistance value of a recording medium, jXs is an impedance of the fixing belt, and jXh is an impedance of the heater.

This utility model relates to the field of resistor technology, specifically to a resistor tube with overlapping wiring, comprising an insulated support tube and a resistor strip spirally wound around the support tube. The resistor strip is an exposed metal strip, comprising integrally formed, continuously bent, alternately bent main body segments and connecting segments. The main body segments maintain a straight shape due to their own strength, while the connecting segments are arc-shaped. Adjacent main body segments are connected via the connecting segments and arranged in a V-shape. Multiple positioning grooves are formed on the outer side of the support tube, and the middle of each main body segment overlaps and is embedded in the positioning grooves. The elasticity of the connecting segments clamps adjacent main body segments tightly against the support tube. Compared with existing technologies, the resistor strip is directly exposed to air for heat dissipation, resulting in higher power density. It eliminates the need for the outer shell and magnesium oxide insulating powder of existing load resistor tubes, reducing the influencing factors of insulation and failure issues. It eliminates the need to consider the high-temperature insulation failure of magnesium oxide powder and problems caused by shell corrosion.

The present invention provides a ceramic composition capable of suppressing chipping during barrel polishing, cracks during heat press bonding, plating extension, and high specific resistance. The ceramic composition of the present invention contains Fe, Cu, Zn, Ni, Mn, Nb, and V, and when Fe, Cu, Zn, and Ni are converted into Fe2O3, CuO, ZnO, and NiO, respectively, and the total amount of Fe2O3, CuO, ZnO, and NiO is set to 100 mol%, Fe converted into Fe2O3 is contained in an amount of 46.70 mol% to 49.70 mol%, Cu converted into CuO is contained in an amount of 4.00 mol% to 7.50 mol%, Zn converted into ZnO is contained in an amount of 7.00 mol% to 33.50 mol%, and the remaining portion is Ni, Mn converted into Mn2O3 is contained in an amount of 300 ppm to 10,000 ppm, Nb converted into Nb2O5 is contained in an amount of 2 ppm to 30 ppm, and V converted into V2O5 is contained in an amount of 10 ppm to 60 ppm, with respect to 100 parts by weight of the total amount of Fe2O3, CuO, ZnO, and NiO.

A system for designing a three-dimensional electrode structure according to one embodiment of the present application can include a structure forming section configured to form a CBD structure using first design parameters input for a conductive material and a binder (CBD) structure, and to form an electrode structure using second design parameters input for the electrode structure; a calculation section configured to calculate an effective conductivity of the CBD structure using an inherent conductivity of the conductive material and an inherent conductivity of the binder, to calculate an effective conductivity of the electrode structure using an inherent conductivity of an active material, an inherent conductivity of a CBD particle, and an inherent conductivity of a current collector, and to calculate a calculated resistivity of the electrode structure by converting the effective conductivity of the electrode structure into an inverse; a correction section configured to calculate a deviation by comparing a calculated specific resistance with a target resistance, and to correct a variable or a shape of the electrode structure to minimize the deviation; and an inverse section configured to calculate the inherent conductivity of the active material, the inherent conductivity of the CBD particle, the inherent conductivity of the current collector, and third design parameters, all of which are included in the corrected electrode structure.

Transmission ionization chamber for the ultra-high dose range comprising at least - an outer modular housing (1a, 1b) for shielding, equipped with shielding foils for transmission of ionising radiation and an inner modular housing made of a material with a specific resistance ≥ 10 7 Ω·cm, and wherein the inner housing comprises form-fitting holders (2a, 2b) for two electrodes and - Electrodes made of metal-coated plastic foils, which are arranged electrically separated by an insulating ring (3) made of electrically insulating material arranged between the electrodes and having a thickness in a range of 0.5 mm to 1.5 mm, and wherein the electrodes and shielding foils are mounted on support rings and - a signal line and a voltage line for the electrodes as well as a ground line for the outer housing (1a, 1b) and the shielding foils.

The application provides a special mold for preparing a large-size nanofiller hybrid film, which solves the core defects that a conventional small-size circular mold cannot prepare a large-size film and film forming is uneven through rectangular large-size structure design, uniform hole layout and fine surface treatment; and a special preparation method is matched to realize accurate control of the film resistance and to prepare a multi-resistance series product. The two work together to stably prepare a specific resistance nanohybrid film with an effective forming size of 1022 mm*50 mm and uniform thickness, effectively meet the strict use requirements of high-end fields such as aviation electromagnetic shielding, lightning protection and conductive deicing, and auxiliary realization of industrialized preparation of the large-size nanohybrid film by the vacuum filtration method.

The invention discloses a MnCo2O4 / Co3O4 coating for a solid oxide fuel cell (SOFC) connector and a preparation method of the MnCo2O4 / Co3O4 coating, and belongs to the technical field of SOFC key component coatings. The coating is of a double-layer oxide skin structure, the inner layer is a Cr2O3 layer, the outer layer is a MnCo2O4 / Co3O4 composite layer, and the coating is prepared on the surface of an SUS 430 steel base material through a two-step electrodeposition and high-temperature oxidation process. The preparation method comprises the following four steps: pre-treating the base material; carrying out electro-deposition on the MnO2 nanosheet layer in the first step; carrying out electro-deposition on the Co layer in the second step; and carrying out high-temperature oxidation conversion in an air atmosphere of 800 DEG C. After the prepared coating is oxidized at 800 DEG C for 5 weeks, the surface specific resistance (ASR) is 4.97 m omega.cm < 2 >, the oxidation parabola rate constant kp is 0.0306 mg < 2 >. Cm <-4 >. Week <-1 >, and the coating has excellent high-temperature oxidation resistance, high conductivity and Cr volatilization inhibition capacity; and the preparation process is simple and controllable, low in cost and suitable for large-scale production, and can be widely applied to performance improvement of the medium-temperature SOFC connector.

To provide a specific resistance measuring device and a banking evaluation method capable of preventing an electrode from being damaged.SOLUTION: This specific resistance measuring instrument includes an electrode-housing part 5 for housing potential electrodes and current electrodes, and a traveling body 3 having a plurality of rolling body 3b parts for supporting the electrode-housing part 5 and rolling on the banking S, and traveling along a traveling direction D1 part together with the electrode-housing part 5 in the banking S. The electrode-housing part 5 has a bottom part side 5b in contact with the banking S, and an inclined part side 5b extending obliquely upward from an end part on the D1 side in the advancing direction of the bottom part side 5c. The end portion of the inclined portion 5c on the traveling direction D1 side is located on the side opposite to the traveling direction D1 with respect to the end portions of the plurality of rolling elements 3b on the traveling direction D1 side.SELECTED DRAWING: Figure 5

This method for measuring the degree of carbonization of carbon felt comprises the steps of: compressing each of a first region and a second region of carbon felt at a compression rate; and applying a current to the carbon felt to measure specific resistance, wherein the first region and the second region are located on opposite sides of the carbon felt, and the compression rate may have a value in the range of 16-40%.

Interconnect resistance in hybrid junction structures can be controlled and designed. The resistance of each interconnect can be controlled by the via width, the number of vias, and the thickness of the liner within the vias. The first and second interconnects of a hybrid junction structure may have different interconnect resistances, even though they are on the same wafer or chip. The techniques described herein include designing interconnects and forming interconnects with specific resistances.

To provide a termination resistor that achieves both high-frequency characteristics and a low profile, and can be mounted on a circuit board as a chip. [Solution] The terminating resistor 11 is a resistor set to a specific resistance value of 10 to 200 Ω. The terminating resistor 11 comprises a resistive layer 12 having a first surface 12a and a second surface 12b on the opposite side of the first surface 12a, a first electrode layer 13 laminated on the first surface 12a of the resistive layer 12, and a second electrode layer 14 laminated on the second surface 12b of the resistive layer 12. The resistive layer 12 is made of a resistive material having a resistivity ρ of 0.5 to 4.0 Ωcm.

An electrode (1) is provided with a base film (2), a first underlayer (3), a second underlayer (4), and a conductive carbon layer (5) in this order toward one side in the thickness direction, the first underlayer (3) being a metal layer or a semimetal layer, the second underlayer (4) being a metal layer, and the specific resistance of the first underlayer (3) being 10 times or more of the specific resistance of the second underlayer (4).

The invention relates to a rotary atomizer (1) for atomizing a coating agent, such as a coating material, comprising a rotor (2, 5) with a rotating magnet (5) and a stationary magnetic sensor (6) for detecting a change in the magnetic field pole of the magnet (5) rotating with the rotating rotor (2, 5); the magnetic sensor (6) is arranged within a detection range around the magnet (5) such that the magnetic sensor (6) can detect a rotating magnetic pole change of the magnetic field. According to the invention, only a low-conductivity material with a specific resistance greater than 1 [Omega] mm / m, 0.5 [Omega] mm / m or 0.1 [Omega] mm / m is arranged in a detection range around the rotating magnet (5), so that an interfering induced current is prevented from being generated in the detection range; and / or a high-conductivity material having a specific resistance of less than 1 [Omega] mm / m, 0.5 [Omega] mm / m or 0.1 [Omega] mm / m is provided only outside the detection range around the rotating magnet (5).

To provide a probe for measuring ground specific resistance capable of more surely measuring the specific resistance of the ground and improving durability against friction or the like.SOLUTION: This ground specific resistance measuring probe 1 has a probe body 20 having a cylinder part 201 and a columnar part 202, a push rod 30, a piston part 40 connected to the lower end of the push rod 30, and an electrode 60 fixed only to the piston part 40. When the push rod 30 is pushed downward, the piston portion 40 moves downward in the cylinder portion 201, and the tip of the electrode 60 protrudes outward from the side surface of the columnar portion 202.SELECTED DRAWING: Figure 4

1. The name of the design product: sludge specific resistance determination experimental device. 2. The use of the design product: sludge specific resistance determination experimental device. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view. 5. The bottom of the design product is the part that is not easy to see or cannot be seen during use, and the top view is omitted.

The invention relates to a resistor (1), in particular a snubber shunt (1) for damping voltage peaks, comprising a resistor element (9) made of a resistor material, wherein the resistor element (9) has a meandering course with at least one deflection region (12) in which the current flow direction is deflected. According to the invention, the resistor element (9) consists, in the deflection region (12), at least partly of a conductor material (e.g. copper) which has a greater specific electrical conductivity than the resistor material such that the current-carrying cross-section of the resistor element (9) in the deflection region (12) consists at least partly of the conductor material.

A soft magnetic metal powder or the like from which a soft magnetic metal fired body can be provided has a high magnetic permeability μ and a specific resistance ρ and is contained in a coil-type electronic component having sufficiently high inductance L and Q value and unlikely to be plating-extended and short-circuited. A soft magnetic metal powder contains soft magnetic metal particles containing at least Fe and Ni. Said soft magnetic metal powder further contains P, Si, Cr and / or M. M is at least one selected from among B, Co, Mn, Ti, Zr, Hf, Nb, Ta, Mo, Mg, Ca, Sr, Ba, Zn, Al, and rare earth elements. The content of each element is within a predetermined range.

The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W / cm2; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W / cm2 or more.

A susceptor (1) for manufacturing a semiconductor device has a disk shape in which a first surface (1a) and a second surface (1b) made of single crystal silicon or polycrystalline silicon are parallel to each other, and the specific resistance value is preferably 10 Ω·cm or less. One or more recesses (2) for accommodating substrates subject to processing are formed in a substrate mounting surface (1a) of the first surface. The warpage measured on the substrate mounting surface side is preferably 20 μm or less, and the warpage is preferably formed in a direction in which the substrate mounting surface (1a) bulges.

A method of forming an electrode of a semiconductor device according to an embodiment of the present disclosure comprises the steps of: performing n times of a ruthenium layer forming cycle including a step of ejecting a ruthenium-containing precursor to form a ruthenium layer on a substrate; and forming a metal layer on the ruthenium layer by performing m times of a metal layer forming cycle including a step of spraying a metal-containing precursor, in which the ruthenium layer forming cycle and the metal layer forming cycle are performed in sequence, or the ruthenium layer forming cycle and the metal layer forming cycle are performed and repeated in sequence twice or more. Therefore, according to an embodiment of the present disclosure, when forming an electrode including a ruthenium layer and a copper layer, an adhesive force between the ruthenium layer and the copper layer may be improved. Accordingly, peeling or separation of the copper layer from the ruthenium layer can be suppressed or prevented. Therefore, the specific resistance of the electrode can be reduced, and the conductivity can be improved.

The utility model discloses a power adjusting cabinet and a multi-closed-loop polycrystalline silicon reduction furnace power supply device, which are applied to the field of polycrystalline silicon. The power adjusting cabinet comprises a first resistor unit, a second resistor unit, a third resistor unit, a first switch, a second switch, a third switch, a fourth switch and a fifth switch, and at least one resistor is arranged in each resistor unit. Due to the specific number of resistors in each resistor unit, under the condition that the number of the voltage regulating cabinet is not increased, the yield of polycrystalline silicon is increased, the equipment and material investment is saved, and the configuration of a power supply system is simplified. Meanwhile, the structure forms a system of three groups of closed-loop controllers, the three resistor units are respectively controlled to operate, and the closed-loop circuits do not influence each other. When the feedback current does not reach the set breakdown current, voltage closed-loop voltage limiting control is adopted, when the feedback current reaches the set breakdown current, current closed-loop constant-current control is adopted, and three closed-loop voltage limiting constant-current control is adopted, so that the stability of the power regulation cabinet is further improved.

The invention belongs to the technical field of direct-current resistance boxes, and particularly relates to a high-precision standard resistance box for temperature measurement and a use method, and the high-precision standard resistance box comprises a four-pole 24-throw switch, a section of high-conductivity metal wire and 23 independent resistors; the four-pole 24-throw switch comprises four poles, each pole comprises a gear shifting operation part, a movable contact and 24 static contacts with serial numbers, the high-conductivity metal wire and 23 independent resistors are in common serial numbers, and the 23 independent resistors have specific resistance values respectively; the high-conductivity metal wire and the 23 independent resistors are electrically connected with same-number static contacts on a first pole, a second pole, a third pole and a fourth pole of the four-pole 24-throw switch respectively through a four-wire system connection method; and the movable contacts on the first pole, the second pole, the third pole and the fourth pole are electrically connected with a box positive current terminal, a box positive voltage terminal, a box negative voltage terminal and a box negative current terminal respectively. According to the technical scheme, the resistance value is high in precision and good in stability.

To lower the specific resistance value of a treating liquid without using a carbon dioxide gas cylinder.SOLUTION: The fluid mixing system 1 is connected to an air supply source 2 for supplying air 3, and is connected to a separation means 10 for separating the air 3 supplied from the air supply source 2 into nitrogen 4 and a residual part 5 other than the nitrogen 4, and a pure water supply source 6. The substrate processing apparatus includes a fluid mixing part 20 for mixing the residual part 5 separated by the separation means 10 with pure water 7 supplied from a pure water supply source 6, and a processing liquid supply pipe 24 for supplying the pure water 7 mixed with the residual part 5 through the fluid mixing part 20 to a processing device 100,200 as a processing liquid 8 to be used when performing predetermined processing to an object.SELECTED DRAWING: Figure 1

A system for designing a three-dimensional electrode structure, according to one embodiment of the present invention, may comprise: a structure forming unit that forms a conductive additive and binder (CBD) structure using a first design parameter inputted for the CBD structure, and forms an electrode structure using a second design parameter inputted for the electrode structure; a calculation unit that calculates an effective electrical conductivity of the CBD structure using an intrinsic electrical conductivity of a conductive additive and an intrinsic electrical conductivity of a binder, calculates an effective electrical conductivity of the electrode structure using an intrinsic electrical conductivity of an active material, an intrinsic electrical conductivity of CBD particles, and an intrinsic electrical conductivity of a current collector, and calculates a specific resistance of the electrode structure by converting the effective electrical conductivity of the electrode structure into a reciprocal value; a correction unit that calculates a deviation by comparing the calculated specific resistance with a target specific resistance, and corrects a variable or shape of the electrode structure so as to minimize the deviation; and a backtracking unit that calculates an intrinsic electrical conductivity of the active material, an intrinsic electrical conductivity of the CBD particles, an intrinsic electrical conductivity of the current collector, and a third design parameter for the corrected electrode structure.

This PFAS detoxification system comprises: a flow path for a waste liquid containing PFAS discharged from a semiconductor fabrication device; one or a plurality of measuring instruments disposed on the flow path to measure the concentration of PFAS contained in the waste liquid; and a control unit. The measuring instrument measures the concentration of PFAS by measuring the pH or the specific resistance value of the waste liquid, and the control unit executes processing in accordance with the concentration of PFAS measured by the measuring instrument.