15 results about "Superconducting transition temperature" patented technology

The invention discloses a metal intercalation boron-carbon superconducting material GeB2C2 under normal pressure and a preparation method of the metal intercalation boron-carbon superconducting material GeB2C2. The material has a two-dimensional Kagome lattice structure, the space group is P6 / mmm (No.191), the lattice constants are a = b = 2.732, and c = 16.784. Through calculation and prediction of a first principle, the material has a superconducting transition temperature of about 48 K under a normal pressure (0 GPa) condition, and is dynamically stable. The superconducting mechanism is derived from a strong electroacoustic coupling effect, and the coupling constant lambda is about 1.64. The material is composed of Ge, B and C elements rich in earth crust, the raw materials are easy to obtain, the cost is low, and the large-scale preparation potential is achieved. Compared with a traditional normal-pressure superconducting material, the material disclosed by the invention has a relatively high superconducting transition temperature; compared with a high-voltage superconductor, a high-voltage environment is not needed, and the preparation and application threshold is remarkably reduced. The material can be applied to the fields of high-performance superconducting filters, superconducting nanowire single-photon detectors, small superconducting magnets and the like, and has important scientific research values and good practical application prospects.

The invention relates to the technical field of high-temperature superconducting materials, and discloses a CuC-based copper oxide high-temperature superconducting material and a preparation method and application thereof. The chemical formula of the CuC-based copper oxide is (Cux, MyC1-x-y) Ba2Ca3Cu4O11 + delta, M is selected from at least one of B, Al, Si, Ge, S, Se and Te, x is more than or equal to 0.1 and less than or equal to 0.9, and y is more than 0 and less than or equal to 1. The preparation method comprises the following steps: firstly, respectively synthesizing BaCuO2 and Ca2CuO3 precursor powder, then mixing the precursor powder with a compound containing an M element, and finally preparing the target material for coating through multiple times of ball milling and sintering. According to the method, an unstable gas carbon source in a traditional process is replaced by optimization of doping elements and introduction of a stable solid doping source, the superconducting target material with uniform components and high stability is successfully prepared, and a superconducting strip prepared from the CuC-based copper oxide target material is high in superconducting transition temperature and excellent in long-term stability. And the key problems of difficult component control and narrow process window in the preparation process of the (Cu, C) Ba2Ca3Cu4O11 + delta material are successfully solved.

The invention discloses a hydrogen-based superconducting material Na2GaCuH6 with a double perovskite structure under normal pressure and a preparation method of the hydrogen-based superconducting material Na2GaCuH6. The material has an Fm-3m space group, the lattice constant is calculated and predicted through the first principle, and the material has the superconducting transition temperature of 42.04 K under the normal pressure condition. The material is composed of four common elements of Na, Ga, Cu and H, and the cost is low; the double perovskite structure is stable in thermodynamics and dynamics under normal pressure; the electro-acoustic coupling constant lambda is approximately equal to 0.98, and medium-intensity electro-acoustic coupling is achieved. Compared with an existing high-voltage hydride superconductor, the material can work without high-voltage equipment, and the preparation and application cost is greatly reduced; compared with a traditional normal-pressure superconductor, the superconductor has a higher Tc value. The material can be applied to the fields of low-temperature superconducting devices, superconducting magnets, quantum computing and the like, and has important scientific research value and application prospect.

This invention discloses a method for growing superconducting RCoC2 single crystals. The method includes: S1, preparing materials according to the stoichiometric ratio of R, Co, and C elements, with the total carbon input compensating for 3%-5% relative to the stoichiometric ratio of RCoC2. The carbon source consists of C blocks and C powder, with the C powder accounting for 7%-15% of the total carbon source and having a particle size of 53-150 μm; S2, placing the raw materials in an arc melting furnace in the order of Co, C, and R, and adding an oxygen absorber; S3, evacuating and then filling with a protective atmosphere; S4, melting the raw materials under the protective atmosphere, flipping them over, and repeating the melting process; S5, cooling to obtain superconducting RCoC2 single crystals. This method can stably obtain millimeter-scale, non-centrosymmetric superconducting RCoC2 single crystals with an Amm² space group. When R is Y, the YCoC2 single crystal exhibits a superconducting transition at low temperatures, with a maximum superconducting transition temperature of 3.7 K. This single crystal can be used to prepare superconducting materials, samples for low-temperature transport research, or samples for topological superconductivity research.

The invention provides a Tl-series superconducting thin film and a preparation method thereof, and belongs to the field of superconducting thin film materials. The preparation method of the Tl-series superconducting thin film provided by the invention comprises the following steps: mixing nitrate or acetate of metal, ethylenediaminetetraacetic acid, a water-soluble high-molecular polymer and water to obtain precursor sol; the metals are thallium, barium, calcium and copper; the molar ratio of thallium to barium to calcium to copper to ethylenediamine tetraacetic acid is (2-3): 2: 1: 2: (7-8); coating a substrate with the precursor sol to obtain a precursor film; and carrying out heat treatment on the precursor thin film in an oxygen atmosphere under a closed condition to obtain the Tl-series superconducting thin film. The Tl-series superconducting thin film obtained by the preparation method provided by the invention presents a Tl-2212 phase, no impurity phase is generated, and the critical transition temperature can reach 100K and is close to the Tl-2212 theoretical superconducting transition temperature.

The invention discloses a superhard superconductive B-C-N superhard material and a preparation method thereof, and belongs to the technical field of superhard materials, the superhard material comprises a three-dimensional interpenetrating composite structure composed of a superhard skeleton and a superconductive phase filled in the pores of the superhard skeleton; the superhard framework comprises a matrix formed by nano-twin diamond and lamellar cubic boron nitride embedded in the matrix, and a B-C-N ternary gradient transition layer exists at the interface of the nano-twin diamond and the cubic boron nitride area; the superconducting phase is magnesium diboride; the Vickers hardness of the superhard material ranges from 75.2 GPa to 82.1 GPa, and the superconducting transition temperature of the superhard material ranges from 35.8 K to 37.1 K; the mechanical property of a superhard material and the functional property of a superconducting material are perfectly fused into a whole, a comprehensive solution capable of replacing a traditional single-function material is provided, and the core problems that in the prior art, functions and performance are difficult to consider, and the service reliability of the material in an extreme environment is insufficient are effectively solved.

The invention discloses a room-temperature ternary lanthanum scandium hydrogen system superconductor and a synthesis method thereof, and belongs to the technical field of high-temperature superconducting material preparation. The method comprises the following steps: loading an La-Sc alloy or uniformly mixed LaH3 and ScH3 and an H source as initial raw materials into a diamond anvil cell pressure cavity, then pressurizing the initial raw materials to 200 GPa or above by using a diamond anvil cell device, and then carrying out high-pressure in-situ heating on a sample by using a heating device at the heating temperature of 1000-3000K to obtain the room-temperature Fm-3m La-Sc-H superconducting system. The prepared ternary lanthanum-scandium-hydrogen system superconductor has excellent superconducting performance, the superconducting transition temperature can reach up to 282K, the ternary lanthanum-scandium-hydrogen system superconductor is a room-temperature superconductor, and records of the superconducting transition temperature in all systems at present are refreshed. The invention is another major breakthrough in the superconducting field for hundreds of years, and has the potential of being applicable to high-temperature superconductors.

This invention belongs to the field of quantum functional materials and nanoelectronic devices, specifically relating to a tantalum diselenide single crystal, its growth method, and its applications. The chemical formula of the tantalum diselenide single crystal is 2H-TaSe2. Its growth method involves mixing Ta and Se raw materials at a molar ratio of 1:2.1~2.5 and sintering to obtain a polycrystalline material. This polycrystalline material is then sealed in a quartz tube with an iodine transport agent and subjected to a gas-phase transport reaction at dual temperatures of 940℃~960℃ and 840℃~860℃. After cooling, a millimeter-sized, smooth-surfaced, and easily peelable tantalum diselenide single crystal is obtained. The superconducting transition temperature of this single crystal is... T c With a charge density wave transition temperature of approximately 90 K and a K ≥ 2.0 K, two-dimensional sheet materials can be prepared by cleaving along the (001) plane, and the resulting sheets retain the properties of the material. T c With superconductivity and charge density wave characteristics of ≥1.8 K, this invention has important application value in the fabrication of low-dimensional quantum devices such as ultrafast optically controlled switches and single-photon detectors.

The application discloses a two-dimensional Ta-S intrinsic topological superconducting material and an electronic structure regulation method thereof. The material is a two-dimensional monolayer crystal of TaS, Ta3S2 and Ta2S, a Dirac point and a Van Hove singularity exist simultaneously near a Fermi level, has intrinsic superconductivity, and has a superconducting transition temperature of 3.731 K-5.799 K; under the action of spin-orbit coupling, the material presents a Z2=1 nontrivial topological state and has a gapless topological edge state. The electronic structure is precisely regulated through components, stress, spin-orbit coupling and electroacoustic coupling. The material is single in composition, stable in structure and can be prepared experimentally, and is suitable for the fields of topological superconductivity and quantum devices.

The invention provides a superconducting transition temperature detection system and method, relates to the technical field of superconducting transition temperature measurement, and solves the technical problems that in the prior art, superconducting transition temperature detection needs manual intervention, and the automation level is low. The system specifically comprises a first module, a second module and a third module which are sequentially cascaded, the first module is used for generating an input file which is adaptive to the superconducting property calculation step and has consistent parameters; the superconducting property calculation step comprises structural relaxation, self-consistent field calculation, phonon calculation, non-self-consistent calculation and superconducting density functional theory solving; the second module is used for calculating and outputting the electroacoustic coupling matrix and coulomb interaction data based on the input file; and the third module is used for calling the SCDFT solver based on the electroacoustic coupling matrix and coulomb interaction data, outputting the superconducting transition temperature and generating a Fermi surface energy gap visualization file. The method is used for measuring the superconducting transition temperature.

The invention belongs to the technical field of single crystal materials, and particularly relates to a SrxBi2Se3 topological superconducting single crystal material and a space preparation method and application thereof. The size of the SrxBi2Se3 topological superconducting single crystal material is larger than or equal to 10 mm * 8 mm * 0.5 mm, the superconducting transition temperature of the SrxBi2Se3 topological superconducting single crystal material is larger than or equal to 3 K, and the doping amount of Sr in the SrxBi2Se3 topological superconducting single crystal material is larger than or equal to 70% of the actual using amount of Sr. Wherein x is more than 0 and less than or equal to 0.3. The preparation method of the SrxBi2Se3 topological superconducting single crystal material has the beneficial effects that the SrxBi2Se3 topological superconducting single crystal material is prepared in a microgravity environment, ideal conditions without convection and sedimentation are provided, solute segregation can be effectively inhibited, uniform nucleation and growth are promoted, and proper conditions are provided for growth of Sr-doped Bi2Se3 single crystals. The microgravity environment is based on a space station experiment platform, and efficient and high-quality space preparation of the SrxBi2Se3 single crystal is achieved.

To provide a laminate with a structure that persistently compresses an object such as an oxide superconducting material, and to provide a method for manufacturing the same and a method for raising a superconducting transition temperature.SOLUTION: A laminate includes a diamond-like carbon (DLC) film on an object including a material selected from an oxide superconducting material and a conductive material, where the object is a pattern-like thin film that is formed on a wire, a sheet material, or a substrate.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of superconducting electronic devices, and particularly relates to a novel tantalum-based Josephson junction and a preparation method thereof, and the preparation method comprises the following steps: sequentially depositing a Nb seed layer and a Ta layer on a substrate, then carrying out the in-situ oxygen plasma oxidation of the Ta layer in the same equipment cavity to form a TaOx barrier layer, and carrying out the in-situ oxygen plasma oxidation of the TaOx barrier layer. And an Nb layer is deposited on the TaOx barrier layer, and an Nb-Ta-TaOx-Nb four-layer laminated structure is obtained. Nb and Ta are adopted as external circuit materials, the superconducting transition temperature is higher than that of Al, and the requirement for the temperature of a refrigerator is lower; compared with AlOx, TaOx has great significance in suppressing TLS (dual energy level system) noise in quantum bits, and the defect density of the TLS can be remarkably reduced by means of a TaOx barrier layer formed by in-situ oxygen plasma oxidation.

The application belongs to the technical field of superconducting electronic devices, and particularly relates to a novel tantalum-based Josephson junction and a preparation method thereof, which comprises the following steps: sequentially depositing a Nb seed layer and a Ta layer on a substrate to form the Nb seed layer and the Ta layer, then performing in-situ oxygen plasma oxidation on the Ta layer in the same equipment cavity to form a TaOx barrier layer, and depositing a Nb layer on the TaOx barrier layer to obtain a Nb-Ta-TaOx-Nb four-layer laminated structure. By adopting Nb and Ta as the outer circuit material, the superconducting transition temperature is higher than that of Al, and the requirement for the temperature of a refrigerator is lower. Compared with AlOx, TaOx has great significance in inhibiting the TLS (two-level system) noise in a quantum bit, and the TaOx barrier layer formed by means of in-situ oxygen plasma oxidation can significantly reduce the two-level system (TLS) defect density.

The application discloses a method for optimizing the superconducting transition temperature of a NbN film on a Si substrate at room temperature and application thereof, and comprises the following steps: fixing the Si substrate temperature as room temperature, setting the sputtering power as 100W-300W, setting the deposition gas pressure as 1mTorr-5mTorr, setting the gas mass flow ratio of the reaction gas N2 and the working gas Ar as 15%-35%, setting the sputtering time as 1200s-1500s, and depositing the NbN superconducting film with high superconducting transition temperature on the Si substrate. The superconducting transition temperature of the NbN superconducting film prepared by the method can reach 14.07K, the deposition temperature is room temperature, the preparation method is simple and reliable, has good repeatability, can be produced in industrial batch, and can provide strong material support for the mechanism research of the subsequent NbN superconducting material, the development of a superconducting dynamic inductance detector and engineering application.