55 results about "Critical field" patented technology

The invention discloses a procedure batch examining and approving tool based on workflow. The tool comprises a workflow database, a service data configuration module, a procedure setting module, a data service module and a batch examining and approving module, wherein a plurality of procedures are stored in the workflow database; the service data configuration module establishes the association relation between each procedure and service data; the procedure setting module sets a critical field from the service data for each procedure; a plurality of procedures to be examined and approved in batch are inquired by the data service module, and the data service module generates procedure information containing the critical field for each procedure to be examined and approved in batch; the batch examining and approving module extracts the procedures to be examined and approved in batch from the data service module, the procedure information of the procedures to be examined and approved in batch is displayed in one batch examining and approving interface, and the procedures to be examined and approved in batch and operating instructions of the procedures to be examined and approved in batch are submitted into a workflow engine. According to the procedure batch examining and approving tool based on the workflow, an examining and approving person simultaneously acquires the procedure information of the procedures to be processed, the operating instructions are input on the batch examining and approving interface, the examining and approving time of the procedure is saved, and the bottleneck problem that a large number of procedures are accumulated in the examining and approving process of the procedures is solved.

A semiconductor device having an enhancement-type MOS structure which can prevent large leakage current is disclosed. A high-concentration region for threshold-value regulation use formed in a channel region below a gate electrode in an enhancement-type transistor is caused to be contiguous with a source region and not contiguous with a drain region. Herein, the distance between the high-concentration region and the drain region is set so as to preclude the depletion layer extending from the drain region side from reaching the high-concentration region. Therefore, the electrical field in the depletion layer does not become the critical field which causes avalanche or Zener breakdown, and so leakage current can be caused to be reduced.

A total ionizing dose suppression architecture for a transistor and a transistor circuit uses an “end cap” metal structure that is connected to the lowest potential voltage to overcome the tendency of negative charge buildup during exposure to ionizing radiation. The suppression architecture uses the field established by coupling the metal structure to the lowest potential voltage to steer the charge away from the critical field (inter-device) and keeps non-local charge from migrating to the “birds-beak” region of the transistor, preventing further charge buildup. The “end cap” structure seals off the “birds-beak” region and isolates the critical area. The critical area charge is source starved of an outside charge. Outside charge migrating close to the induced field is repelled away from the critical region. The architecture is further extended to suppress leakage current between adjacent wells biased to differential potentials.

An improved n-channel integrated lateral DMOS (10) in which a buried body region (30), beneath and self-aligned to the source (18) and normal body diffusions, provides a low impedance path for holes emitted at the drain region (16). This greatly reduces secondary electron generation, and accordingly reduces the gain of the parasitic PNP bipolar device. The reduced regeneration in turn raises the critical field value, and hence the safe operating area.

A process for growing the lead zirconate titanate film includes such steps as building crystal growing a lanthanum nickel oxide film on substrate in critical field mode, and building crystal growing the lead zirconate titanate film at 350-500 deg.C in critical field mode.

The invention discloses a method for preparing iron selenium superconducting material by spark plasma sintering technology. The chemical formula of the iron selenium superconducting material is (FeSe)1(M)x, wherein the insulator M is one or more of SrTiO3, BaTiO3 and MgO, and the molar ratio of iron selenium (FeSe) to the insulator M is 1:x. The method for preparing the material includes: solid powder mixing, spark plasma sintering (SPS) and annealing. The powder of iron selenium and the powder of the insulator M are weighed respectively according to a certain molar ratio of 1:x, after mechanically grinding and mixing for a certain time, the mixed powder is subjected to spark plasma sintering at a suitable pressure and temperature, and then the sintered sample is annealed under suitable conditions to obtain (FeSe)1(M)x material. The material has a stable superconducting performance, and the superconducting transition temperature is between 10.10K and 13.44K. The material is not sensitive to the raw material ratio, and the value of x ranges from 0.2 to 15. Meanwhile, the material has a high upper critical field which can be up to 16.6T to 26.7T. Thereby the material can be applied in the fields of electric energy, superconducting magnets, biology, medical technology, communication, and microelectronics.

A method for determining the power-frequency design field intensity of a high-voltage crosslinked polyethylene cable comprises the step of manufacturing insulation test blocks of the crosslinked polyethylene cable, the step of manufacturing and preprocessing pin electrodes, the step of manufacturing test specimens for an electrical tree test, the step of conducting an electrical tree initiation test and data processing under a power frequency voltage, the step of conducting an electrical tree initiation test and data processing under the 400 Hz alternating voltage, the step of determining the critical voltage of electrical tree initiation through an impressed voltage and electrical tree initiation time, the step of calculating the critical field intensity of electrical tree initiation according to the size of an electrode system, and the step of determining the power-frequency design field intensity of the crosslinked polyethylene cable through an electric field enhancement coefficient. According to the method, the number of the needed test specimens is small, operation is simple, and control is easy. The determined power-frequency design field intensity can truly and effectively reflect power frequency voltage resistance of the high-voltage crosslinked polyethylene cable with the long service life. The method can be directly used for insulation thickness design of the cable, and guarantees that high-voltage power cables which can meet the technical requirement for long-time and reliable operation and have economic advantages are designed during new product development.

The embodiments herein focus on improving recognition accuracy of these fields on credit card bills by detecting and identifying critical fields on a credit card, extracting the data from the critical fields and comparing the data with known data on a payor, payee and biller.

A motor and method of operation are provided. The motor includes a plurality of cylinders, wherein at least two of the cylinders are positioned at a non-zero angle relative to one another. Each cylinder includes a piston configured to move within the cylinder and a high-temperature superconductor material in a superconducting state in the presence of an external magnetic field below a critical field strength, wherein the critical field strength is a function of the temperature of the superconductor material. Each cylinder further includes a permanent magnet mechanically coupled to the piston and configured to move within the cylinder and to have a magnetic field that interacts with the superconductor material. A sum of a non-zero time-invariant magnetic field strength and a time-varying magnetic field strength cycles between at least a first field strength below the critical field strength for the superconductor material at the temperature and at least a second field strength above the critical field strength for the superconductor material, such that the superconductor material cycles between a superconducting state and a non-superconducting state, applying a time-varying force is applied to the magnet.

A motor and a method of operating the motor are provided. The motor includes a stator including a high-temperature superconductor material at a temperature. The superconductor material is in a superconducting state in the presence of an external magnetic field below a critical field strength, wherein the critical field strength is a function of the temperature of the superconductor material. The motor further includes a rotor including a plurality of permanent magnets and configured to rotate about an axis, wherein each magnet of the plurality of permanent magnets has a magnetic field that interacts with the superconductor material. A sum of a non-zero time-invariant magnetic field strength and a time-varying magnetic field strength cycles between at least a first field strength below the critical field strength for the superconductor material at the temperature and at least a second field strength above the critical field strength for the superconductor material at the temperature, such that the portions of the material cycles between a superconducting state and a non-superconducting state. A time-varying force is applied to the rotor by an interaction of the rotor's magnetic field with the portions of the superconductor material. In certain embodiments, a motor is provided.

The invention relates to a high temperature superconducting material of gadolinium, thorium, oxygen, iron and arsenic, pertains to a ZrCuSiAs-type structure and has the same crystal structure as LaO1-yFyFeAs. The general formula of the high temperature superconducting material of gadolinium, thorium, oxygen, iron and arsenic of the invention is Gd1-xThx OFeAs, wherein, x is more than or equal to 0.05 and less than or equal to 0.30; the mole ratio of all elements content in the high temperature superconducting material gadolinium, thorium, oxygen, iron and arsenic is that Gd:Th: O: Fe: As is equal to 0.70 to 0.95: 0.3 to 0.05:1: 1: 1. According to the content of every element, the raw materials are mixed, ground, preformed, calcinated and quickly cooled, etc. so as to obtain a superconducting polycrystalline block. The high temperature superconducting material of gadolinium, thorium, oxygen, iron and arsenic of the invention has max superconducting critical temperature Tc which reaches 56.5 K, estimated upper critical field Bc2 exceeding 100 Tesla, is superior to the LaO1-yFyFeAs superconductor with similar structure and has obvious advantages in practical use.

A motor and a method of operating the motor are provided. The motor includes a plurality of cylinders. Each cylinder includes a piston configured to move within the cylinder. Each cylinder further includes a high-temperature superconductor material at a temperature. The superconductor material is in a superconducting state in the presence of an external magnetic field below a critical field strength, wherein the critical field strength is a function of the temperature of the superconductor material. Each cylinder further includes a permanent magnet mechanically coupled to the piston and configured to move within the cylinder and to have a magnetic field that interacts with the superconductor material. A sum of a non-zero time-invariant magnetic field strength and a time-varying magnetic field strength cycles between at least a first field strength below the critical field strength for the superconductor material at the temperature and at least a second field strength above the critical field strength for the superconductor material at the temperature, such that the superconductor material cycles between a superconducting state and a non-superconducting state. A time-varying force is applied to the magnet by an interaction of the magnet's magnetic field with the superconductor material.

The present invention relates to robot controller and is especially mini controller in master-slave operation mode in robot system. The mini controller includes frame with swinging rod in the upper part, finger ring in the lower part and inducing coil on the swinging rod; and two electromagnetic poles with winding on two sides of the frame. Between the two cylindrical surfaces of the electromagnetic poles and separated by not greater than 5 mm, the winding is embedded to produce moment signal on electromagnetic induction for the control of the slave manipulator. The present invention features compact structure, small volume, relatively greater and stable moment signal, and is especially suitable for use in small and miniature control device to provide force or moment feedback information and to make the operator to on-scene feeling.

The invention designs a series of quantum materials with a chemical general formula of CuIr2-xAuxTe4 (x is greater than or equal to 0 and less than or equal to 0.2) and a preparation method thereof, and belongs to the technical field of quantum functional material manufacturing. The preparation method is a traditional high-temperature solid-phase method and comprises the following steps: fully grinding and mixing Cu, Ir, Au and Te powder according to corresponding stoichiometric ratios, vacuumizing and sealing in a quartz tube, putting the sealed vacuum quartz tube filled with raw materials into a furnace, and sintering at 850 DEG C for 120 hours to obtain CuIr2-xAuxTe4 (x is greater than or equal to 0 and less than or equal to 0.2) polycrystalline powder. Physical properties such as conductivity, magnetic property, upper and lower critical fields and the like are measured through a comprehensive physical property test system (PPMS), basic properties of superconductivity and charge density wave phase change of a target product are deeply discussed, and a relational graph of specific doping concentration and respective superconductivity and charge density wave phase change is established. And the crystal structure of the target product is analyzed through XRD data fitting. With the compound superconducting material synthesized, a new member is added for the family of transition metal telluride superconducting materials.

A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.