13 results about "Superconducting critical temperature" patented technology

A superconductor device disclosed includes a plurality of superconductor layers and dielectric layers interleaved with the plurality of superconductor layers with moat regions that extend through the plurality of superconductor layers and the dielectric layers and a composite material ground plane that is one of the superconductor layers of the plurality of superconductor layers, the composite ground plane comprises first regions formed of a first superconductor material, and second regions formed of a second superconductor material having a second superconducting critical temperature higher than a first superconducting critical temperature of the first superconductor material, such that at least one flux vortex caused by cryogenic cooling can be removed from the second region during cooling below the second critical temperature and above the first critical temperature to the first regions, and removed from the first regions to the moat regions upon cooling below the first critical temperature.

The application provides a superconducting power generation device and a power generation method. The power generation device comprises a superconductor, a conductive coil, a permanent magnet and a cooling medium. The superconductor is made of a second type superconductor material. The second type superconductor material can generate a magnetic suspension force on the external magnet to suspend the permanent magnet when the ambient temperature is lower than the superconducting critical temperature. When an acting force is applied to the permanent magnet, the position of the permanent magnet relative to the conductive coil changes, the magnetic field distribution around the conductive coil changes, the magnetic flux through the coil changes, an induced electromotive force is generated in the coil, and the conversion from mechanical energy to electric energy is realized. The device can realize the conversion from ambient mechanical energy to electric energy in a super-low temperature environment, thereby solving the problem of energy source on a low-temperature celestial body in the outer solar system.

The invention discloses a preparation method of a YBa2Cu3O7-delta superconducting material, and relates to a preparation method of a superconductor material, which comprises the following steps: dissolving Y2 (CO3) 3, Ba (NO3) 2 and CuSO4. 5H2O in deionized water according to a molar ratio, uniformly stirring, firstly adding citric acid, then adding ethylene glycol, then adding ammonia water to adjust the pH value, carrying out microwave heating and stirring to form sol, carrying out vacuum drying, and grinding into particles, thereby obtaining the YBa2Cu3O7-delta superconducting material. Carrying out gradient sintering in an oxygen atmosphere, and continuously carrying out microwave treatment in the sintering process; and carrying out gradient cooling in an oxygen atmosphere, and carrying out ball milling, screening and drying after cooling. According to the process method, the microwave-assisted low-temperature calcination technology and the sol combustion method are combined, energy consumption is remarkably reduced, the preparation period is obviously shortened, material element distribution is more uniform, the superconductive critical temperature Tc is larger than or equal to 72K, the technical problems that a traditional process is high in high-temperature energy consumption and uneven in component are solved, and the method can be applied to the fields of superconductive power grids, quantum devices and the like on a large scale.

The invention discloses a simulation method for the intrinsic detection efficiency of a non-uniform superconducting strip photon detector, and the method comprises the steps: building a model for simulating the electrical non-uniformity and geometric non-uniformity, representing the non-uniformity and granularity of a superconducting critical temperature used by the electrical non-uniformity, and completing the modeling simulation of a non-uniform SSPD; the method comprises the following steps of: simulating photon incidence by using an initial hot spot, acquiring a forming, growing or fading process of a stop band based on the heterogeneity of a superconducting strip in combination with granularity and spatial distribution, and acquiring first intrinsic detection efficiency; based on the heterogeneity of the superconducting strip, the thermoelectric evolution process of the stopband in the SSPD longitudinal direction is obtained in combination with the finally formed stopband, and the second intrinsic detection efficiency is obtained; the curve corresponding points of the first intrinsic detection efficiency and the second intrinsic detection efficiency are multiplied to serve as the final intrinsic detection efficiency; and improving the performance of the photon detector based on the final intrinsic detection efficiency.

A microwave filter includes a multilayer stack. The multilayer stack includes one or more first-type layers composed of a first superconductor material having a first superconducting critical temperature; and one or more second-type layers composed of a non-superconductor metal or a second superconductor material having a second superconducting critical temperature that is lower than the first superconducting critical temperature. The multilayer stack is configured to behave as a dissipative metal for photons having a frequency above twice a superconducting gap frequency of the multilayer stack and to behave as a superconductor for photons having a frequency below twice the superconducting gap frequency of the multilayer stack.

The invention belongs to the technical field of high-temperature superconducting materials, and particularly relates to a target material for growing a CuC-1223 superconducting thin film through PLD and a preparation method and application of the target material. Wherein the molar ratio of the three metal elements of Ba, Ca and Cu is 2: (2-3): (3.5-4.5); and the three metal elements of Ba, Ca and Cu are uniformly distributed under the nanoscale. When the target material provided by the invention is used for PLD deposition, plasma plume with stable components and accurate stoichiometric ratio can be provided, so that an epitaxial film with few impure phases and high crystal quality is grown. According to the thin film, the intrinsic superconducting characteristic of the CuC-1223 phase can be more fully reflected, the higher superconducting critical temperature (Tc) and the more excellent current-carrying performance are obtained, the preparation process is good in reproducibility, the target batch consistency is high, and a solid foundation is provided for reliable and repeated preparation of the high-performance superconducting thin film.

A method for designing high-temperature superconducting materials according to an embodiment of the present invention comprises, in a layered superconductor including an atomic layer containing an alkali metal or alkaline earth metal and a conductive layer containing one or more materials selected from the periodic table: a step for identifying conditions for thermal decoupling occurring between the atomic layer and the conductive layer; and a step for predicting or controlling the superconducting critical temperature (Tc) of a material on the basis of the thermal decoupling conditions.

The invention particularly relates to a preparation method of a silicon-based Nb3Sn superconducting thin film, and belongs to the technical field of superconducting material preparation. According to the preparation method, an optimized double-target (Nb / Sn) magnetron co-sputtering technology (preferably, the Sn target power is 30 W) is adopted, a 900 DEG C / 3 h high-vacuum heat treatment technology is combined, and the high-quality superconducting thin film with the Nb3Sn main phase content being high, the crystallinity being good and the superconducting critical temperature Tc reaching up to 15.89 K is successfully prepared on a monocrystalline silicon substrate compatible with a microelectronic technology. The method is uniform in element mixing, accurate in component regulation and control and good in process repeatability, an effective and reliable solution is provided for solving the preparation problem of the silicon-based high-performance Nb3Sn superconducting thin film, and the method has wide industrial application prospects.

A magnet (1) for a magnetic resonance imaging (MRI) device (2) includes at least two coils (12, 14) including a first superconductor having a first superconducting critical temperature; and at least one connector (18) comprising a second superconductor having a second superconducting critical temperature, the at least one connector connecting the at least two coils together. The second superconducting critical temperature is higher than the first superconducting critical temperature.

A microwave filter includes a multilayer stack. The multilayer stack comprises: one or more layers of a first type, the one or more layers of the first type consisting of a first superconductor material having a first superconductive critical temperature; and one or more layers of a second type comprised of a non-superconductor metal or a second superconductor material having a second superconductor critical temperature lower than the first superconductor critical temperature. The multilayer stack is configured to exhibit as a dissipative metal for photons having a frequency higher than twice a superconducting energy gap frequency in the multilayer stack and as a superconductor for photons having a frequency lower than twice the superconducting energy gap frequency in the multilayer stack.

The invention relates to the field of superconducting electronic devices, in particular to a superconducting tunnel junction based on liquid metal and a preparation method and application thereof. The superconducting tunnel junction comprises a first gallium electrode, a tunneling barrier layer formed on the first gallium electrode, and a second gallium electrode formed on the tunneling barrier layer; and the tunneling barrier layer is a tunneling barrier layer containing a gallium compound. According to the novel gallium-based liquid metal tunnel junction structure, the superconducting critical temperature can be increased, stable work under the 4K condition is achieved, the preparation process is simple, and the novel gallium-based liquid metal tunnel junction structure has natural oxidation potential barriers and flexible device potential.

The invention discloses a single-ion-doped lanthanum oxide block material capable of directionally regulating and controlling superconducting performance as well as a preparation method and application of the single-ion-doped lanthanum oxide block material. The preparation method comprises the following steps: S1, in an inert gas atmosphere, mixing and pressing lanthanum oxide, metal lanthanum and a doped ion source into a precast block; the doped ion source is selected from a yttrium source or a nitrogen source; s2, the prefabricated block is put into a multi-surface jacking machine, the pressure is increased to 4.5-5.5 GPa, and the pressure is maintained; then, the temperature is increased to 1473-1653 K at the speed of 100-200 K / min, heat preservation is conducted, and the single-ion-doped lanthanum oxide block material La < 1-x > Y < x > O or LaO < 1-y > Ny is prepared; wherein x is selected from the group consisting of 0.04 to 0.11; and y is selected from 0.40 to 0.70. The block material prepared by the method has a pure NaCl type crystal structure, the impurity phase content is less than or equal to 4%, the superconductive critical temperature is high, and the superconductor volume is close to 100%.

The invention discloses a superconducting and permalloy mixed shielding neutron regulation and control method and device, and relates to the technical field of neutron polarization. The method comprises the following steps: S1, vacuumizing a vacuum cavity; S2, building a permalloy cover; S3, cooling a low-temperature copper chain and superconducting tape complex; S4, dismounting the permalloy cover; the problem that in the prior art, the superconducting state is unstable due to the fact that the temperature is easily interfered by an external magnetic field in the process of cooling to the superconducting critical temperature is solved, neutron regulation and control are achieved on the experimental technology and device through current change of a superconducting strip spiral coil magnetic field in the vacuum cavity and change of an external rotating magnetic field, and the experimental efficiency is improved. Stable operation of 10A current of the superconducting strip spiral coil is achieved, and the external spiral magnetic field can be adjusted at any angle of 0.1 degree in the 360-degree direction.