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Superconducting nanowire single photon detector and method of obtaining such detector

A single-photon detector and superconducting nanowire technology, applied in nano-optics, photometry, superconducting devices, etc., can solve problems such as poor quality, achieve cheap packaging, simplify packaging, and improve applicability

Pending Publication Date: 2021-03-19
FUNDACIO INST DE CIENCIES FOT NIQUES
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, those known detectors, such as the one disclosed in US6812464B1, have several disadvantages mainly related to the type of superconducting material used to form the superconducting nanowires or nanostrips, which are often of low quality, and related to the methods (usually sputtering processes) required to form superconducting nanowires or nanostrips using these materials, which allow them to operate only at the aforementioned ultra-low operating temperatures

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  • Superconducting nanowire single photon detector and method of obtaining such detector
  • Superconducting nanowire single photon detector and method of obtaining such detector
  • Superconducting nanowire single photon detector and method of obtaining such detector

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Embodiment Construction

[0071] In this section, some working examples of the detector and method of the present invention will be described in detail.

[0072] In particular, the inventors of the present invention have constructed SNSPDs with very thin film thicknesses using the high-Tc cuprate superconductor bismuth strontium calcium copper oxide (BSCCO) to allow reasonable detector performance. BSCCO belongs to a completely novel class of strictly two-dimensional (2D) van der Waals (vdW) materials that have not been seen until recently. Compared with other high-Tc superconductors, BSCCO can be mechanically fabricated with a film thickness of 1.5 nm, which is only equivalent to half a crystallographic unit cell. Furthermore, as a "cousin" of the excellent material graphene, these ultraclean single crystals possess material qualities far superior to strongly disordered superconductor thin films of NbN or WSi used in state-of-the-art SNSPDs. With greater than 10-fold thinned thickness, 2D superconduc...

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Abstract

The present invention relates to a superconducting nanowire single photon detector comprising a superconducting nanowire configured and arranged for incidence of photons on a region of the superconducting nanowire and for forming a local non-superconducting region or hot spot on the region. The superconducting nanowire is made of a high Tc cuprate superconductor material having a superconducting critical temperature above 77K. The invention also relates to a method of obtaining a superconducting nanowire single photon detector of the invention.

Description

[0001] The project leading to this application has received funding from the European Union's Horizon 2020 research and innovation program under award agreement 820378. technical field [0002] In a first aspect, the present invention relates to a superconducting nanowire single photon detector operable above a temperature corresponding to the boiling point of liquid nitrogen. [0003] A second aspect of the invention relates to a method for obtaining the superconducting nanowire single photon detector of the first aspect of the invention. Background technique [0004] In recent years, superconducting nanowire single-photon detectors (SNSPDs), also known as superconducting single-photon detectors (SSPDs), have evolved into some of the most advanced superconducting photodetectors (SPDs), revolutionizing quantum communication protocols The development of key enabling technologies such as quantum key distribution and Bell's inequality testing. However, based on localized heati...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L39/12H01L39/10H01L39/24H01L31/101G01J1/44H10N60/85H10N60/01H10N60/30H10N60/84
CPCH01L31/101G01J1/44G01J2001/442H10N60/84H10N60/857H10N60/0268H10N60/0801G01J1/0209G01J1/0252G01J1/42B82Y20/00H01L31/0203H01L31/024H01L31/0352H01L31/09H01L31/18H10N60/30H10N60/0296H10N60/0688
Inventor 迪米特里·K·埃费托夫卢晓波阿米尔·M·阿里保罗·塞弗特若泽·杜兰
Owner FUNDACIO INST DE CIENCIES FOT NIQUES
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