47results about How to "Reduce dark count" patented technology

The present invention proposes a single-photon Si-APD detector, comprising: an absorption region, a P+ contact region, an N+ contact region, an avalanche region, and a dielectric layer. The middle part of the surface of the P-type substrate is provided with an absorption region. A P+ contact area is provided, and a lower electrode is provided below the P+ contact area; stop rings are provided at both ends of the upper part of the absorption area; an avalanche area is provided in the middle of the upper part of the absorption area, and the avalanche area is composed of P-type impurities Formed by compensating doping with N-type impurities; an N+ contact region is arranged above the avalanche region; a guard ring is arranged on both sides of the avalanche region, and an upper electrode is arranged above the guard ring; an N+ contact region is arranged above the N+ contact region medium layer. The single-photon Si-APD detector has a wide avalanche region and few defects introduced in the manufacturing process, which can achieve high detection efficiency and low dark count device performance.

The invention discloses an integrated low-delay active quenching near-infrared single-photon detector, which comprises an active quenching circuit and an active recovery circuit, the active quenchingcircuit comprises an APD chip, a reverse amplifier, a high-speed comparator and an identification level adjusting circuit, the anode of the APD chip is connected to the forward input end of the high-speed comparator through a balance capacitor Cc, and meanwhile the anode of the APD chip is connected to the direct-current bias control circuit; the cathode of the APD chip is divided into two paths,one path is connected to the reverse input end of the high-speed comparator and the identification level adjustment circuit through the balance resistor R and the balance capacitor Cd1, and the otherpath is connected with the quenching transistor bias circuit; the forward output end of the high-speed comparator is connected with the reverse amplifier to generate a quenching signal and send the quenching signal to the cathode of the APD chip; the active recovery circuit controls a pulse trigger for the FPGA, and the pulse trigger is connected with the forward enabling end of the high-speed comparator. The detector has the advantages that the USB power supply circuit can be directly powered by a USB, and has low post-pulse probability and strong practicability in the case of low dead time and high detection efficiency.