Gated silicon-based visible near-infrared single-photon detection device

Abstract

The invention relates to the field of photoelectric detection, in particular to a gated silicon-based visible near-infrared single-photon detection device which comprises a direct-current high-voltage power supply, a radio-frequency transformer, a high-speed CMOS driver, an FPGA, a high-speed comparator, a human-computer interaction interface and a silicon-based visible near-infrared single-photon detector SAPD. The direct-current high-voltage power supply is connected in series with the inductor and the current-limiting resistor and then is connected with an N pole of the silicon-based visible near-infrared single-photon detector SAPD. The high-voltage gating pulse with short rising and falling time can be generated, the dark counting and post-pulse probability can be effectively reduced while the single-photon detection efficiency is improved, peak noise caused by the front edge and the rear edge of the gating pulse can be effectively filtered out, counting of avalanche signals is achieved, meanwhile, the width, the amplitude and the repetition frequency of the gating pulse can be adjusted, and working points can be conveniently adjusted for different silicon-based visible near-infrared single-photon detectors, so that the performance is better.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a gated silicon-based visible-near-infrared single-photon detection device. Background technique [0002] The structure of the device and the process used determine that the silicon-based visible and near-infrared single photon detector needs to be charged with a minimum of more than one hundred volts, and a maximum of hundreds of thousands of volts, which is much higher than the breakdown voltage V of the device. BR The voltage can only enter the Geiger mode to achieve single photon detection, and the continuous increase is much higher than the device V BR Therefore, the silicon-based visible-near-infrared single-photon detector SAPD needs to be combined with a corresponding quenching circuit to achieve single-photon detection capability and prolong device life. At present, the commonly used quenching methods include passive quenching, active quenching and gated quenching...

AI Technical Summary

Problems solved by technology

InGaAs detectors require low bias voltage and overbias voltage, while silicon-based visible-near-infrared single-photon detectors in the gated operating mode must achieve high single-photon detection efficiency and low single-photon detection efficiency without damaging the device. The dark count and post-pulse probability, then the bias high voltage V added to the SAPD P to be as low as possible below the breakdown voltage V BR , to ensure that the gate pulse V Pulse superimposed to bias the high voltage V P The voltage amplitude applied to both ends of SAPD is much higher than the device breakdown voltage V BR , then the gating pulse V Pulse The amplitude should be as large as possible, and the pulse width should be as narrow as possible to ensure sufficient detection gate width, that is, the gate pulse V Pulse For a more stable high time, this requires a gating pulse V Pulse The rise and fall times are as short as possible, which undoubtedly improves the gating pulse V Pulse The difficulty of generation; the larger the amplitude of the gating pulse, the shorter the rise and fall time, the greater the spike noise formed by the front and rear edges, which also increases the difficulty of extracting the avalanche signal

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