1160 results about "Protection ring" patented technology

An access control system uses an existing file format standard, e.g. for personal data interchange (PDI) or image file interchange, for novel access control purposes to provide temporary access for a wireless key device to a lock device and its protected environment by creating appropriate temporary access defining data in a data object compliant with the file format standard and communicating the data object to the lock device via the wireless key device.

The present invention provides for authenticating code and / or data and providing a protected environment for execution. The present invention provides for dynamically partitioning and un-partitioning a local store for the authentication of code or data. The local store is partitioned into an isolated and non-isolated section. Code or data is loaded into the isolated section. The code or data is authenticated in the isolated section of the local store. After authentication, the code is executed. After execution, the memory within the isolated region of the attached processor unit is erased, and the attached processor unit de-partitions the isolated section within the local store.

PCT No. PCT / SE96 / 00794 Sec. 371 Date May 27, 1998 Sec. 102(e) Date May 27, 1998 PCT Filed Jun. 18, 1996 PCT Pub. No. WO97 / 01907 PCT Pub. Date Jan. 16, 1997A communication network system having at least three nodes, which are interconnected by transmission links carrying traffic to and from the nodes. The transmission links are divided into a working ring and a protection ring where the working ring and the protection ring can transmit traffic in opposite directions. A node is able to detect when an error occurs in the surrounding transmission links or the node itself. Each node can, by itself, divert traffic from the working ring to the protection ring and / or from the protection ring to the working ring. A recovery action is performed when the error is healed.

Efficient protection mechanisms for ring-based label-switching networks, such as multi-protocol label switching (MPLS) networks. The protection mechanisms are designed to protect point-to-multipoint label switching paths (LSPs). In steering ring protection embodiments, the nodes of the ring network are provided with pre-configured tables that enable each node to operate in both working mode and protection mode. The information required for each node to switch between the two modes in included in its respective table during the pre-configuration of the ring network. In wrapping ring protection embodiments, the wrapping is performed by assigning a unique LSP label to each LSP and further configuring each intermediate node in the ring network to transparently pass data packets including the unique LSP label. Upon detecting a failure in a network node, the data packets including the unique LSP label are switched to a protection ring.

Embedded RFID (radio frequency identification) tags for objects or containers and related systems and methods are disclosed that overcome problems existing with previous RFID tags. The RFID tags are embedded within recesses within the outer surfaces of objects or containers, such as within a metal valve flange for a metal container. The RFID tags can also be shaped and configured to fit within recesses so that the top surfaces of the RFID tags match the outer surfaces of the objects or containers. The embedded RFID tags can also be painted or otherwise disguised so that they are more difficult to identify thereby reducing the likelihood that attempts to remove them will occur. In addition, the RFID tags are preferably tamper resistant so that removal of an RFID tag, after it is attached, will destroy and / or render inoperable the RFID transponder within the RFID tag. The RFID tags can also use PSK (phase shift key) modulation to improve communication with readers where metal protection rings are used to protect valves. The embedded RFID tags described herein are particularly useful for tracking of liquid propane gas (LPG) containers and / or other types of containers or objects for holding hazardous materials.

An electrical micro-optic module (eMOM) includes a structure having zigzag contact surfaces and variable thread pitches. The structure elongates the path of contaminated particles and effectively reduces the amount of contamination to almost one order of magnitude due to the exponential decay of contamination versus path. Moreover, an electrostatic discharge (ESD) protection ring and conductive painting are used for static charge removal.

Disclosed is a method and node apparatus for traffic protection of Optical Transport Network (OTN), including: setting a part of channels in one fiber as working channels used for carrying traffic in need of protection, and setting a part of channels in the other fiber with a reverse transmission direction as protection channels, the number of which is equal to that of the working channels, to form a one-to-one protection for the working channels; when a failure in an optical line of OTN is detected, determining a bridging node and a switching node in accordance with pre-designated protection strategy, bridging and switching the traffic to be transmitted through the failed optical line between the working channels and the protection channels at the determined bridging node and switching node. This invention can realize OTN protection based on two-fiber OMS shared protection ring, and improve the transmission reliability of optical networks.

Disclosed is a single-photon-level resolution ratio sensor unit structure based on the standard CMOS technology. The single-photon-level resolution ratio sensor unit structure uses an SPAD. According to the single-photon-level resolution ratio sensor unit structure, basically, a deep N-well (3) is arranged above a P-type silicon substrate (4), a P-well area (2) is formed above the deep N-well (3) and wrapped by the deep N-well (3), an anode contact (9) is connected to the P-well area (2) through a heavy-doping P-well area (1), a cathode contact (10) is connected to an N-well area (6) and the deep N-well (3) through a heavy-doping N-well area (5), a shallow trench isolation area (7) is located between the P-well area (2) and the N-well area (6) to isolate a P-well from an N-well, a P-type doped protection ring (8) surrounds the shallow trench isolation area (7) so as to restrain dark noise caused by defects in shallow trench isolation, and a PN junction (11) is arranged between the bottom of the P-well area (2) and the deep N-well (3); the PN junction generates a high-voltage area when proper bias voltage is applied between the cathode and the anode, and an SPAD multiplication area is formed so as to explore photons; the breakdown voltage of the edge of the PN junction is higher than that of the SPAD plane multiplication area by controlling the concentration gradient of the deep N-well (3).

A wafer support device 20 includes an electrostatic chuck 22 provided to attract a silicon wafer W as an object of plasma processing, a protection ring 30 mounted on a step 26 of the electrostatic chuck 22, a cooling plate 40 placed on a rear face of the electrostatic chuck 22 to cool down the electrostatic chuck 22, and a coolant gas flow path 50 arranged to supply a flow of a coolant gas for cooling down the protection ring 30. The protection ring 30 has a skirt 34 arranged to cover over a side face of the electrostatic chuck 22. The coolant gas flow path 50 is formed to make the coolant gas flow from a rear face of the cooling plate 40 through an outer circumferential area 48 of an adhesive sheet 47 to be spread over and collide against a whole circumference on an inner wall of the skirt 34 of the protection ring 30.

The invention relates to a wafer edge protection ring and a method for reducing particles at a wafer edge. The protection ring is located in a reaction cavity of a plasma processing device, the protection ring can cover the wafer edge in the process that a wafer is processed so that processing byproducts including polymers can be borne, and the protection ring can move in the process that the wafer is released and take the collected polymers off the wafer. The wafer edge protection ring is simple in structure, convenient to control and capable of effectively reducing the particles at the wafer edge and guarantees quality of a chip on the wafer edge.

The present invention provides method and device for protecting silicon wafer edge, wherein the method comprises the following steps: placing a protection ring on a working bench by a device for protecting silicon wafer; protecting the silicon wafer edge by the protection ring during exposure of the silicon wafer; performing said flows again after replacing a new silicon wafer, wherein the centreof the protection ring is a hollow part, and the edge thereof is an entity part; the protection ring prevents the silicon wafer edge from exposing during exposure. The method for protecting silicon wafer edge comprises a position adjusting mechanism, a Z-direction lifting gear, three eccentric linkage overload protection cam-reciprocating pneumatic swing-cylinder connecting rod mechanisms, a blowing mechanism, a detection mechanism, a speed control module, and a pneumatic control module. In the method and device for protecting silicon wafer edge of the present invention, the method is that negative glue exposure and the edge protection are performed synchronously; when the silicon wafer is exposed, the silicon wafer edge is protected without a second process for processing the silicon wafer edge; the processes are reduced, and working efficiency is improved.

A file locker manages the storage and use of protected data for software objects. A protected environment maintains the cryptographic and isolative infrastructure to support sealing of data items for use by a trusted agent. The file locker uses the protected environment's sealing functionality to seal data items for the file locker's exclusive access. The file locker seals, to itself, files received from software objects, and provides those files upon request, and upon sufficient proof of the requestor's trustworthiness, authenticity, and / or identity. The file locker may be used to extend the protected environment's sealing functionality to legacy applications, without the legacy applications having to implement agents that can run in the protected environment and access the sealing functionality directly.

This invention relates to a service / circuit protection and a recovery method by combining multiplex section protection and mesh recovery in an automatic exchange optical network, which is suitable for the combination of a linear multiplex section protection and a protection of two-fiber two-way multiplex section, shared protection ring and recovery of the mesh. In this method, the service / circuit are first automatically protected by the multiplex section protection method, that is to say applying linear multiplex section protection or two-fiber two-way multiplex section protection ring, when the multiplex section protection is unable to continue, the mesh recovery is started at once.

The invention discloses a PN junction or PIN junction type micro nuclear battery and a manufacturing method thereof, belonging to the fields of semiconductor, nuclear physics and micro energy source. The battery is provided with a protection ring 6 in the periphery ring-shaped region of a p+ type semiconductor layer 5 on the basis of traditional PN junction or PIN junction type micro nuclear battery; meanwhile a protection ring contact electrode 8 is arranged above the protection ring 6 for leading an electrical signal out; in addition, the manufacturing method of the nuclear battery is also disclosed. In the micro nuclear battery disclosed by the invention, the added protection ring inhibits surface leakage and influence of interface state current on radiation induced current, indirectly increases open circuit voltage, and also improves sensibility of elements on low-energy radioactive source, thus improving energy conversion efficiency of elements.

The invention discloses a method for preparing a hollow steel ingot for a protection ring of a large power generator by adopting electroslag remelting. The method comprises the following steps: (1) preparing consumable electrode groups; (2) melting slag into liquid molten slag; (3) inserting the consumable electrode groups into an electroslag remelting hollow ingot crystallizer; (4) starting two transformers; (5) injecting the liquid molten slag into the electroslag remelting hollow ingot crystallizer; (6) when the consumable electrode groups are in contact with the liquid molten slag, forming an electrifying loop among fake electrodes, the consumable electrode groups and a bottom water tank; (7) when the liquid molten slag is in contact with an upper section, forming a loop among the upper section, the bottom water tank and the transformers connected with the bottom water tank; (8) adjusting the output currents and voltages of the two transformers; (9) when a metal melt is in contact with a molten steel liquid level detection device, starting an ingot stripping device for ingot stripping; (10) exchanging the consumable electrode groups; and (11) inserting subsequent consumable electrode groups into the liquid molten slag, and repeating the steps (8 to 10) until the ingot stripping is finished.

The invention provides a semiconductor high-voltage terminal structure and a production method thereof. The method comprises the steps of: firstly providing a silicon baseplate, forming a field oxide layer on the silicon baseplate and introducing an easily corroded layer in the field oxide layer; identifying a high-voltage terminal structure area by using a photomask; and then corroding the fieldoxide layer by using a wet method to form a ramp oxide layer with an oblique angle; carrying out ion implantation by using the ramp oxide layer as a self-aligned mask to introduce initial impurities diffusing horizontally; and finally forming a high-voltage protection ring with a horizontal doping gradient at the starting end of the ramp oxide layer; and forming a ramp field plate by depositing high-doping polycrystalline silicon or metal on the ramp oxide layer. The semiconductor high-voltage terminal structure comprises the silicon baseplate, the ramp oxide layer arranged on the silicon baseplate, the high-voltage protection ring with a horizontal doping gradient which is injected by taking the ramp oxide layer as the self-aligned mask, and the high-doping polycrystalline silicon or metal ramp field plate deposited on the ramp oxide layer.

The invention relates to a deep trench high-power MOS device and the manufacturing method. The MOS device is arranged on an overlooking plane, a central area is provided with an array which consists of parallel connected single cells, the periphery of the single-cell array is provided with a terminal protection structure, the terminal protection structure consists of at least one protection ring which is arranged at an inner ring and a stop ring which is positioned at an outer ring; as both the protection ring and the stop ring adopt trench type conductive polysilicon, and a single-cell grid electrode lead wire adopts the method of directly opening a hole to lead the wire on the trench type conductive polysilicon in the manufacturing process of the device; compared with the manufacturing method of existing common plane type deep trench high-power MOS device with a field-plate structure, the invention can reduce two lithographys and corresponding processes under the premise of not affecting the performances of the device, thus greatly reducing manufacturing cost. At the same time, the invention adopts one time phosphorus injection, then one time boron injection and matching annealing processes are adopted to regulate the conductive polysilicon resistance, thereby greatly reducing the leakage current between a grid and a source and ensuring to obtain a reasonable threshold voltage under the premise of not increasing the concentration of an N-well.

A structure and a method for forming the same. The structure includes (a) a substrate having a top substrate surface; (b) an integrated circuit on the top substrate surface, wherein the integrated circuit includes a bond pad electrically connected to a transistor of the integrated circuit; (c) a protection ring on the top substrate surface and on a perimeter of the integrated circuit; (c) a kerf region on the top substrate surface, wherein the protection ring is sandwiched between and physically isolates the integrated circuit and the kerf region, wherein the kerf region includes a probe pad electrically connected to the bond pad, and wherein the kerf region is adapted to be destroyed by chip dicing without damaging the integrated circuit and the protection ring.

A piezoelectric power generation device based on urban roads disclosed by the invention includes three parts: a load receiving unit, a piezoelectric element, and an electrical control unit. Among them, due to the impact and vibration of pedestrians and vehicles, the load-bearing unit is subjected to force vibration, thereby outputting a continuously decreasing pulse-type impact force, and at the same time transmitting the impact pressure to the piezoelectric element; the piezoelectric element is used to receive the impact transmitted by the supporting part Pressure, output voltage and current signals from the positive piezoelectric effect to the electrical control part, the electrical control part includes piezoelectric material groups, elastic plates, protective rings, and electrode leads; the electrical control part is connected to the electrode leads of the piezoelectric element for The voltage and current output from the piezoelectric element are detected, converted, stored, and indicated.

Online transaction security is improved by detecting a start of an online financial transaction between a user-controlled online transaction application and a remote payment service. A protected data input module, a protected environment module, and a safe data transfer module each provides a corresponding set of protection operations. A risk level of conducting the financial transaction is assessed based on a vulnerability assessment and on present condition of the local computing system. An initial degree of protection for each of the modules is set, and subsequently adjusted based on the risk level.

Multiple working paths are established on each working rings and multiple protection paths are established on each of multiple protection rings. A working path on a first working ring spans across first and second nodes for signal transmission in a first direction of the ring, and a working path on a second working ring spans across the first and second nodes for signal transmission in a second, opposite direction of the ring. A protection path on a first protection ring spans across the first and second nodes for signal transmission in said second direction, and a protection path on a second protection ring spans across the first and second nodes for signal transmission in said first direction. The first and second nodes normally use the working paths, respectively. When one of the working paths fails, the first and second nodes use a corresponding protection path.

The embodiment of the invention discloses a method for protecting a packet transport network (PTN). The method constructs a protection path for service data stream carried on a shared protection ring, wherein, the protection path includes a wrapping protection path and a steering protection path. The method comprises the following steps: a first service data stream sends data through the wrapping protection path; a service data stream node stops sending a second service data stream subsequent to the first service data stream to the wrapping protection path and caches the second service data stream; and the first service data stream completely passes through the service data stream node again to switch the cached second service data stream from the wrapping protection path to the steering protection path. The embodiment of the invention further provides corresponding equipment and a corresponding system. The invention can solve the out-of-sequence problem in the PTN in the case of adopting a wrapping / steering combined protection scheme.

The present invention discloses an LED (Light Emitting Diode) module, which comprises: a plurality of LED lamps, baseplates, heat-conduction blocks, heat-conduction elements, and fixing elements. The LED lamp has an electrode plate on one side and an LED on the other side. One face of the electrode plate has two electrodes respectively arranged in two edges. A protection ring annularly surrounds the LED. The baseplate is a printed circuit board having a plurality of through-holes and cascade circuits on one side. The heat-conduction block is a metal block having an appropriate thickness and a high thermal conductivity and is attached to one side of the electrode plate to dissipate the heat generated by the LED lamps. The heat-conduction block has a plurality of fixing holes. The fixing elements are fastened into the fixing holes to join together the heat-conduction block and the baseplate. The heat-conduction element is a heat-conduction body attached to the other side of the heat-conduction block.

The invention relates to a manufacturing method of a flat-type avalanche diode detector used for detecting a single photon. The manufacturing method comprises the following steps: sequentially growing an InP buffer layer, an InGaAs absorbing layer, an InGaAsP gradient layer, an N-type InP charge layer and an InP cap layer on an N-type InP substrate; growing an SiO2 protective layer on the InP caplayer; photoengraving a round window at the middle of the SiO2 protective layer; eroding the InP cap layer in the round window through wet-method erosion, thereby forming a round hole; carving a protection ring window on the SiO2 protective layer around the round window; removing surplus SiO2 protective layer by utilizing an HF (hydrogen fluoride) solution in the protection ring window through a diffusion process; regrowing the InP cap layer an SiO2 layer, and caving an electrode window at the periphery of the round hole; forming a top ring electrode on the electrode window through an electron beam evaporation and desquamation process, and preparing a metal electrode at the periphery and one side of the ring electrode; and forming a back electrode at the back of the N-type InP substrate through electron beam evaporation, and preparing a SiNx antireflection layer at the surface of the InP cap layer in the round hole, thereby finishing the manufacture of the avalanche diode detector.

A connection fitting (10) for a pipe, including a tubular body (12), an O-ring (14) mountable on outer side of tubular body (12), a substantially tubular collet (16) having a first end and a second end and having a memory, a substantially annular and resilient grab ring (20) for gripping the outer side of a pipe inserted into the collet (16), a substantially tubular spacer ring (22) locatable on the free side of the grab ring (20), a collet retainer (18), and a tubular protection ring (24) locatable within the spacer ring (22), wherein when the collet retainer (18) engages with the collet (16) and causes the collet (16) to lock onto the tubular body (12) apertures (66) in the collet retainer (18) permit portions of the protection ring (24) to be seen after connection of a pipe to the connection fitting (10) is completed.

The invention discloses a silicon-based near-infrared single photon avalanche diode detector, and belongs to the technical field of photoelectric detection. The single photon avalanche diode detectorcomprises a P-type epitaxial layer arranged above a P-type substrate, wherein the P-type substrate and the P-type epitaxial layer are provided with an N+ buried layer region therebetween, deep P wellregions are symmetrically arranged on the N+ buried layer region, a deep P well region is arranged on the N+ buried layer region at the central position, and an avalanche region is formed between thedeep P well region and the N+ buried layer region. According to the single photon avalanche diode detector, the deep avalanche region is formed between the deep P well and the N+ buried layer, the lightly-doped and uniformly distributed P-type epitaxial layer is utilized as a virtual protection ring at the same time to improve the near-infrared photon detection efficiency, the size of the device is reduced, and the dark counting noise is reduced. The manufacturing method can carry out manufacturing based on the standard silicon-based process, and has the advantages of low cost, high integration, low power consumption, near-infrared detection capability and the like.