1155 results about "Protection ring" patented technology

An access control system uses an existing file format standard, e.g. for personal data interchange (PDI) or image file interchange, for novel access control purposes to provide temporary access for a wireless key device to a lock device and its protected environment by creating appropriate temporary access defining data in a data object compliant with the file format standard and communicating the data object to the lock device via the wireless key device.

PCT No. PCT/SE96/00794 Sec. 371 Date May 27, 1998 Sec. 102(e) Date May 27, 1998 PCT Filed Jun. 18, 1996 PCT Pub. No. WO97/01907 PCT Pub. Date Jan. 16, 1997A communication network system having at least three nodes, which are interconnected by transmission links carrying traffic to and from the nodes. The transmission links are divided into a working ring and a protection ring where the working ring and the protection ring can transmit traffic in opposite directions. A node is able to detect when an error occurs in the surrounding transmission links or the node itself. Each node can, by itself, divert traffic from the working ring to the protection ring and/or from the protection ring to the working ring. A recovery action is performed when the error is healed.

An electrical micro-optic module (eMOM) includes a structure having zigzag contact surfaces and variable thread pitches. The structure elongates the path of contaminated particles and effectively reduces the amount of contamination to almost one order of magnitude due to the exponential decay of contamination versus path. Moreover, an electrostatic discharge (ESD) protection ring and conductive painting are used for static charge removal.

Disclosed is a single-photon-level resolution ratio sensor unit structure based on the standard CMOS technology. The single-photon-level resolution ratio sensor unit structure uses an SPAD. According to the single-photon-level resolution ratio sensor unit structure, basically, a deep N-well (3) is arranged above a P-type silicon substrate (4), a P-well area (2) is formed above the deep N-well (3) and wrapped by the deep N-well (3), an anode contact (9) is connected to the P-well area (2) through a heavy-doping P-well area (1), a cathode contact (10) is connected to an N-well area (6) and the deep N-well (3) through a heavy-doping N-well area (5), a shallow trench isolation area (7) is located between the P-well area (2) and the N-well area (6) to isolate a P-well from an N-well, a P-type doped protection ring (8) surrounds the shallow trench isolation area (7) so as to restrain dark noise caused by defects in shallow trench isolation, and a PN junction (11) is arranged between the bottom of the P-well area (2) and the deep N-well (3); the PN junction generates a high-voltage area when proper bias voltage is applied between the cathode and the anode, and an SPAD multiplication area is formed so as to explore photons; the breakdown voltage of the edge of the PN junction is higher than that of the SPAD plane multiplication area by controlling the concentration gradient of the deep N-well (3).

A wafer support device 20 includes an electrostatic chuck 22 provided to attract a silicon wafer W as an object of plasma processing, a protection ring 30 mounted on a step 26 of the electrostatic chuck 22, a cooling plate 40 placed on a rear face of the electrostatic chuck 22 to cool down the electrostatic chuck 22, and a coolant gas flow path 50 arranged to supply a flow of a coolant gas for cooling down the protection ring 30. The protection ring 30 has a skirt 34 arranged to cover over a side face of the electrostatic chuck 22. The coolant gas flow path 50 is formed to make the coolant gas flow from a rear face of the cooling plate 40 through an outer circumferential area 48 of an adhesive sheet 47 to be spread over and collide against a whole circumference on an inner wall of the skirt 34 of the protection ring 30.

The present invention provides method and device for protecting silicon wafer edge, wherein the method comprises the following steps: placing a protection ring on a working bench by a device for protecting silicon wafer; protecting the silicon wafer edge by the protection ring during exposure of the silicon wafer; performing said flows again after replacing a new silicon wafer, wherein the centreof the protection ring is a hollow part, and the edge thereof is an entity part; the protection ring prevents the silicon wafer edge from exposing during exposure. The method for protecting silicon wafer edge comprises a position adjusting mechanism, a Z-direction lifting gear, three eccentric linkage overload protection cam-reciprocating pneumatic swing-cylinder connecting rod mechanisms, a blowing mechanism, a detection mechanism, a speed control module, and a pneumatic control module. In the method and device for protecting silicon wafer edge of the present invention, the method is that negative glue exposure and the edge protection are performed synchronously; when the silicon wafer is exposed, the silicon wafer edge is protected without a second process for processing the silicon wafer edge; the processes are reduced, and working efficiency is improved.

This invention relates to a service/circuit protection and a recovery method by combining multiplex section protection and mesh recovery in an automatic exchange optical network, which is suitable for the combination of a linear multiplex section protection and a protection of two-fiber two-way multiplex section, shared protection ring and recovery of the mesh. In this method, the service/circuit are first automatically protected by the multiplex section protection method, that is to say applying linear multiplex section protection or two-fiber two-way multiplex section protection ring, when the multiplex section protection is unable to continue, the mesh recovery is started at once.

The invention provides a semiconductor high-voltage terminal structure and a production method thereof. The method comprises the steps of: firstly providing a silicon baseplate, forming a field oxide layer on the silicon baseplate and introducing an easily corroded layer in the field oxide layer; identifying a high-voltage terminal structure area by using a photomask; and then corroding the fieldoxide layer by using a wet method to form a ramp oxide layer with an oblique angle; carrying out ion implantation by using the ramp oxide layer as a self-aligned mask to introduce initial impurities diffusing horizontally; and finally forming a high-voltage protection ring with a horizontal doping gradient at the starting end of the ramp oxide layer; and forming a ramp field plate by depositing high-doping polycrystalline silicon or metal on the ramp oxide layer. The semiconductor high-voltage terminal structure comprises the silicon baseplate, the ramp oxide layer arranged on the silicon baseplate, the high-voltage protection ring with a horizontal doping gradient which is injected by taking the ramp oxide layer as the self-aligned mask, and the high-doping polycrystalline silicon or metal ramp field plate deposited on the ramp oxide layer.

A method for performing protection switching in an optical network does so in an optimal manner by performing the protection switching actions in the various nodes of a protection path in parallel rather than in sequence. To do so, a channel failure message is transmitted from an end node A in the optical network upon detecting a failure in a link in the optical network that includes the end node A. If a failure can be detected at both end nodes, the channel failure messages are transmitted from both end nodes the moment they detect failure without any further waiting. Upon receiving the first channel failure message regardless its originating end node, switching actions in intermediate nodes are initiated. The channel failure messages are forwarded from the intermediate nodes to their corresponding next nodes before completing switching actions in the intermediate nodes. When receiving channel failure response messages, these messages are forwarded to a next node from the intermediate node only after switching actions are complete in the intermediate node. A technique for merging messages in nodes is also disclosed.

The invention relates to a deep trench high-power MOS device and the manufacturing method. The MOS device is arranged on an overlooking plane, a central area is provided with an array which consists of parallel connected single cells, the periphery of the single-cell array is provided with a terminal protection structure, the terminal protection structure consists of at least one protection ring which is arranged at an inner ring and a stop ring which is positioned at an outer ring; as both the protection ring and the stop ring adopt trench type conductive polysilicon, and a single-cell grid electrode lead wire adopts the method of directly opening a hole to lead the wire on the trench type conductive polysilicon in the manufacturing process of the device; compared with the manufacturing method of existing common plane type deep trench high-power MOS device with a field-plate structure, the invention can reduce two lithographys and corresponding processes under the premise of not affecting the performances of the device, thus greatly reducing manufacturing cost. At the same time, the invention adopts one time phosphorus injection, then one time boron injection and matching annealing processes are adopted to regulate the conductive polysilicon resistance, thereby greatly reducing the leakage current between a grid and a source and ensuring to obtain a reasonable threshold voltage under the premise of not increasing the concentration of an N-well.

A structure and a method for forming the same. The structure includes (a) a substrate having a top substrate surface; (b) an integrated circuit on the top substrate surface, wherein the integrated circuit includes a bond pad electrically connected to a transistor of the integrated circuit; (c) a protection ring on the top substrate surface and on a perimeter of the integrated circuit; (c) a kerf region on the top substrate surface, wherein the protection ring is sandwiched between and physically isolates the integrated circuit and the kerf region, wherein the kerf region includes a probe pad electrically connected to the bond pad, and wherein the kerf region is adapted to be destroyed by chip dicing without damaging the integrated circuit and the protection ring.

A piezoelectric power generation device based on urban roads disclosed by the invention includes three parts: a load receiving unit, a piezoelectric element, and an electrical control unit. Among them, due to the impact and vibration of pedestrians and vehicles, the load-bearing unit is subjected to force vibration, thereby outputting a continuously decreasing pulse-type impact force, and at the same time transmitting the impact pressure to the piezoelectric element; the piezoelectric element is used to receive the impact transmitted by the supporting part Pressure, output voltage and current signals from the positive piezoelectric effect to the electrical control part, the electrical control part includes piezoelectric material groups, elastic plates, protective rings, and electrode leads; the electrical control part is connected to the electrode leads of the piezoelectric element for The voltage and current output from the piezoelectric element are detected, converted, stored, and indicated.

Online transaction security is improved by detecting a start of an online financial transaction between a user-controlled online transaction application and a remote payment service. A protected data input module, a protected environment module, and a safe data transfer module each provides a corresponding set of protection operations. A risk level of conducting the financial transaction is assessed based on a vulnerability assessment and on present condition of the local computing system. An initial degree of protection for each of the modules is set, and subsequently adjusted based on the risk level.

Multiple working paths are established on each working rings and multiple protection paths are established on each of multiple protection rings. A working path on a first working ring spans across first and second nodes for signal transmission in a first direction of the ring, and a working path on a second working ring spans across the first and second nodes for signal transmission in a second, opposite direction of the ring. A protection path on a first protection ring spans across the first and second nodes for signal transmission in said second direction, and a protection path on a second protection ring spans across the first and second nodes for signal transmission in said first direction. The first and second nodes normally use the working paths, respectively. When one of the working paths fails, the first and second nodes use a corresponding protection path.

The invention relates to an intelligent flight device with an obstacle avoiding function for bridge detection. The device comprises a body, a protection ring, a detection mechanism, a connecting mechanism, a buffer mechanism and four flight mechanisms; the detection mechanism comprises a camera, a connecting block, a stretchable assembly and an adjusting assembly; the stretchable assembly comprises an air pump, a cylinder, a piston and two hinge units; the buffer mechanism comprises a plurality of buffer assemblies; each buffer assembly comprises a sleeve, a first spring, an ejector rod and asteel ball; the connecting mechanism comprises a plurality of connecting assemblies; each connecting assembly comprises a second spring, a pressure plate and a connecting rod. According to the intelligent flight device with the obstacle avoiding function for bridge detection, the camera is moved and rotated through the detection mechanism, the camera can perform photographing at different angles and directions, and photographing blind spots are avoided; due to the buffer mechanism and the protection ring, the phenomenon that the body collides with a bridge and piers during flying is avoided, safety flight of the device is ensured, and therefore the practicability of the device is improved.

The present invention discloses an LED (Light Emitting Diode) module, which comprises: a plurality of LED lamps, baseplates, heat-conduction blocks, heat-conduction elements, and fixing elements. The LED lamp has an electrode plate on one side and an LED on the other side. One face of the electrode plate has two electrodes respectively arranged in two edges. A protection ring annularly surrounds the LED. The baseplate is a printed circuit board having a plurality of through-holes and cascade circuits on one side. The heat-conduction block is a metal block having an appropriate thickness and a high thermal conductivity and is attached to one side of the electrode plate to dissipate the heat generated by the LED lamps. The heat-conduction block has a plurality of fixing holes. The fixing elements are fastened into the fixing holes to join together the heat-conduction block and the baseplate. The heat-conduction element is a heat-conduction body attached to the other side of the heat-conduction block.

The invention discloses a silicon chip edge protection device and an application method thereof. A cylinder, one end of which is arranged on a fixed disc and the other end of which is arranged on a three-eccentric cam disc, horizontally stretches and swings to drive the three-eccentric cam disc arranged on the fixed disc to perform circular motion; by a method of converting a linear motion into aplurality of equal synchronous radial motions in a vector conversion form, the linear swing is converted into the circular motion; the three-eccentric cam disc drives eccentric grooves on the cam disc to perform circular motion around respective circle center, so that a circular motion is converted a plurality of synchronous eccentric motions; the three-eccentric cam disc drives cams in the eccentric grooves to perform radial motion, so that the plurality of synchronous eccentric motions are converted into synchronous radial motions; and cam followers drive protection claws to perform radial motion, and the protection claws grip or lay down protection rings, so that exchange of the protection rings or other articles is realized. The device has high precision, good reliability, high repeated precision, simple structure, low need of power source and high synchronism.