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34 results about "Single-photon avalanche diode" patented technology
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A single-photon avalanche diode (SPAD) is a solid-state photodetector in which a photon-generated carrier (via the internal photoelectric effect) can trigger a short-duration but relatively large avalanche current. This avalanche is created through a mechanism called impact ionization, whereby carriers (electrons and/or holes) are accelerated to high kinetic energies through a large potential gradient (voltage). If the kinetic energy of a carrier is sufficient (as a function of the ionization energy of the bulk material) further carriers are liberated from the atomic lattice. The number of carriers thus increases exponentially from, in some cases, as few as a single carrier. This mechanism was observed and modeled by John Townsend for trace-gas vacuum tubes, becoming known as a Townsend discharge, and later being attributed to solid-state breakdown by K. McAfee. This device is able to detect low-intensity ionizing radiation, including: gamma, X-ray, beta, and alpha-particle radiation along with electromagnetic signals in the UV, Visible and IR (in the optical case this can be down to the single photon level). SPADs are also able to distinguish the arrival times of events (photons) with a timing jitter of a few tens of picoseconds.
Superlattice multiplication layer avalanche diode and preparation method thereof
PendingCN122138513ADark count rateCharge layer
This invention discloses a superlattice multiplication layer avalanche diode and its fabrication method. The single-photon avalanche diode includes a graphene transparent electrode and, from bottom to top, an InP substrate, an n-type buffer layer, a superlattice absorption region, a p-type charge layer, a superlattice gradient region, a superlattice multiplication region, a p-type contact layer with a p-type contact window, and a passivation layer. The graphene transparent electrode is grown on the passivation layer and the p-type contact window, forming an ohmic contact with the p-type contact region. Magnetic metal nanoparticles that generate a local magnetic field are embedded in the superlattice multiplication region. The magnetic metal nanoparticles are uniformly distributed in-plane within a depth range of 5-400 nm from the interface in the light-gathering direction of the superlattice multiplication region. This invention combines the internal bandgap optimization of the superlattice with the external limiting pump capability of graphene to produce a synergistic effect, providing a single-photon avalanche diode with low dark count rate, weak afterpulse effect, high detection efficiency, and the ability to operate at relatively high temperatures.
Owner:ZHONGSHAN DEHUA CHIP TECH CO LTD
Multi-mode detection single photon avalanche diode front-end circuit
PendingCN122151038AWave based measurement systemsPhotometry electrical circuitsSingle-photon avalanche diodeLinear control
The application relates to a single photon avalanche diode front-end circuit for multi-mode detection, which integrates a quenching, delay control and self-resetting module composed of basic MOS tubes, inverters and logic gates. Three control signals are output by a controller to configure modes: in a synchronous gating mode, the related MOS tubes are sequentially controlled to be turned on and turned off in a gating mode; in an asynchronous free-running mode, the related control levels are fixed, and the reset delay is linearly controlled by adjusting the third control signal. The application realizes dual-mode detection by using a single circuit structure, shares the core quenching path, has the advantages of small area, low power consumption and wide adjustable range of dead time, and is suitable for large-scale SPAD array integration.
Owner:FUDAN UNIVERSITY
A single photon avalanche diode and a light detection device
This invention discloses a single-photon avalanche diode and a photodetector. The single-photon avalanche diode includes a substrate, a first p-type epitaxial layer, an n-type buried layer, a p-type buried layer, a second p-type epitaxial layer, an anode contact region, and a cathode contact region. The first p-type epitaxial layer is located on one side of the substrate; the n-type buried layer and the p-type buried layer are located on the side of the first p-type epitaxial layer away from the substrate, and the n-type buried layer and the p-type buried layer form an abrupt junction; the second p-type epitaxial layer is located on the side of the p-type buried layer away from the n-type buried layer; the anode contact region is located on the side of the second p-type epitaxial layer away from the p-type buried layer and is coupled to the p-type buried layer; the cathode contact region is located on the side of the n-type buried layer away from the substrate and is coupled to the n-type buried layer. The technical solution of this invention can improve the photodetector capability of the device.
Owner:SHANGHAI SILICON PRINTING TECH CO LTD
Time-resolved spectrum measurement method and apparatus based on multi-event time-to-digital converter, device, and medium
PCT designated stageWO2026113772A1Raman scatteringColor/spectral properties measurementsSingle-photon avalanche diodeAvalanche diode
The present application relates to a time-resolved spectrum measurement method and apparatus based on a multi-event time-to-digital converter, a device, and a medium. The method comprises: a multi-event time-to-digital converter performs histogram statistics on photon signals, which are responded at different times and correspond to each column of single-photon avalanche diodes, in different laser pulse periods, so as to determine photon signal distributions of a photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes in the different laser pulse periods; and the multi-event time-to-digital converter performs delayed merging on the photon signal distributions in the different laser pulse periods to determine a photon lifetime curve corresponding to the photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes, and integrates the photon lifetime curve corresponding to the photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes to construct a time-resolved spectrum of a sample to be measured. The present application can reduce the count loss or time error caused by dead time.
Owner:JIHUA LAB
Single photon avalanche diode with shared conductive line
PendingUS20260190540A1Single-photon avalanche diodeAvalanche diode
A single-photon avalanche diode (SPAD) device includes a first deep trench isolation (DTI) structure on a first side of the SPAD device, a first vertical doped region over a side of the first DTI structure, a second DTI structure on a second side of the SPAD device, a second vertical doped region over a side of the second DTI structure, a deep well coupled between the first vertical doped region and the second vertical doped region, and a shallow trench structure over the second DTI structure, the shallow trench structure comprising insulating sidewalls and a first conductive line between the insulating sidewalls, wherein the first conductive line is coupled to the second vertical doped region.
Owner:GLOBALFOUNDRIES SINGAPORE PTE LTD
Dynamic range extension for spad-based devices
A radiation-sensitive device (320) is disclosed. The device includes an array of single-photon avalanche diodes (105) and a circuit (115) configured to measure the intensity of incident radiation from the array of SPADs using multiple different measurement windows to provide multiple associated results. The circuit is configured to determine the intensity of the incident radiation based on one of the multiple results, the selection of which is determined by whether the result exceeds a maximum count, which is at least partially limited by the duration of the measurement window associated with the result. An associated method for increasing the dynamic range of a radiation-sensitive device including an array of SPADs is also disclosed.
Owner:AMS INTERNATIONAL AG
X-ray detector
Proposed is an X-ray detector. The X-ray detector includes a pixel array panel including a plurality of pixels, a single-photon avalanche diode disposed within each pixel, a diode driving circuit disposed within each pixel and including a pulse generation circuit configured to convert an electrical signal output from an output terminal of the single-photon avalanche diode into an output signal in a form of a pulse, a pixel control circuit disposed within each pixel and including a first control circuit configured to output the output signal as a clock signal, and a counter circuit disposed within each pixel and including an n-bit counter configured to use the clock signal (where n is an integer equal to or larger than 2) to count events.
Owner:RAYENCE +1
2D TDC arrangement
UndeterminedDE112024003185T5High resolution imagingSingle-photon avalanche diode
A sensor arrangement for high-resolution imaging using a common connection between a single-photon avalanche diode (SPAD) and a time-to-digital converter (TDC), comprising: a) a two-dimensional array of SPADs arranged in rows and columns, each SPAD being connected to a quench circuit (QU) that generates a digital pulse for each SPAD event; b) a row connection and a column connection, each QU of the SPAD array being connected to the row and column connections; c) a plurality of TDC channels, each assigned to either a specific row or a specific column of the SPAD array, the TDC channels being driven by a common clock generator and having N stages, and the TDC channels being configured to measure the time interval between the occurrence of a SPAD event and the clock signal;d) Synchronization means to ensure synchronous operation of the TDC channels assigned to the rows and columns of the SPAD array; e) A measuring device for acquiring the measurement results from the TDC channels assigned to the rows and columns of the SPAD array; f) Comparison means for comparing the measurement results from the row and column TDC channels to identify the SPAD source associated with a particular SPAD event; and g) Sorting means for matching the identified SPAD event to the corresponding histogram of the source SPAD.
Owner:AUSTRIAMICROSYSTEMS AG
3d-stacked SPAD sensor with in-pixel multi-frame storage
PCT designated stageWO2026136948A1Television system detailsColor television detailsHigh densitySingle-photon avalanche diode
The system discloses a pixel including a memory and a single-photon avalanche diode (SPAD). The pixel is operable in a first mode and a second mode. The system further includes using high density static random-access memory (SRAM) based pixels for multi-bin histogramming for time-of-flight measurements and multi-frame storage intensity imaging.
Owner:OUSTER INC
Apparatus and method
An apparatus, wherein the apparatus comprises: a single photon avalanche diode sensor comprising a plurality of single photon avalanche diode pixels, each single photon avalanche diode pixel configured to generate and output a light detection event to a neuromorphic circuit; and a neuromorphic circuit implementing a plurality of spiking neurons, wherein the neuromorphic circuit is configured to process the light detection events using the plurality of spiking neurons.
Owner:SONY SEMICON SOLUTIONS CORP
A method and system for laser ranging using single photon avalanche diodes
This invention provides a lidar ranging method and system using a single-photon avalanche diode (SPAD). The lidar ranging method using a SPAD includes the following steps: generating and transmitting a laser pulse sequence, the laser pulse sequence containing *n* pulses, with *n* time intervals between the *n* pulses, wherein each time interval is an integer multiple of the resolution of the time-to-digital converter (TD-SCDMA), and the sum of all time intervals is a preset constant value to fix the duration of a single measurement cycle; receiving the echo signal reflected from the target using a SPAD detector, and quantizing the echo signal into a received vector using the TD-SCDMA; performing a cross-correlation operation between the received vector and the corresponding transmitted vector of the laser pulse sequence, and calculating the target distance based on the peak position of the cross-correlation result. This invention achieves high-efficiency ranging with a stable frame rate while reducing hardware costs.
Owner:TIANMU (JIASHAN) PHOTOELECTRIC TECH CO LTD
Single photon avalanche diode, receiving sensor and lidar
The application belongs to the technical field of optical devices, and provides a single-photon avalanche diode, a receiving sensor and a laser radar. The SPAD unit is isolated from the peripheral epitaxial layer by setting a first DTI structure, the first DTI structure and the SPAD unit do not contact each other, a first doped region is arranged between the first DTI structure and the mixed dielectric layer, a PN junction is formed between the first doped region and the epitaxial layer, thereby forming a PNP structure or an NPN structure at the DTI position. No matter the bias polarity of the SPAD unit, there is a reverse-biased PN junction, which can form effective electrical isolation of the SPAD high-voltage bias and the logic ground end. On the premise of not additionally increasing the process complexity, effective PN junction electrical isolation is realized, and the short circuit problem caused by incomplete physical separation of the DTI is avoided.
Owner:SUTENG INNOVATION TECHNOLOGY CO LTD
Dynamic range extension for spad-based devices
ActiveCN115735103BRadiation pyrometryRaman/scattering spectroscopyLight sensingSingle-photon avalanche diode
A radiation sensitive device (420) is disclosed. The radiation sensitive device comprises a plurality of single photon avalanche diodes (SPADs) (105-0), and a processing circuit (415) configured to determine an intensity of incident radiation using at least one of the plurality of SPADs. The amount of SPADs used to determine the intensity of the incident radiation varies in relation to the intensity of the incident radiation. A related method of determining the intensity of radiation incident on such a radiation sensitive device is also disclosed, as well as the use of such a radiation sensitive device in an electronic nose or point-of-care device or for ambient light sensing.
Owner:AMS INTERNATIONAL AG
Verilog-a based modeling method for single photon avalanche diode
PendingCN122263771ACAD circuit designComplex mathematical operationsPhoton detectionParticle physics
The application discloses a single-photon avalanche diode modeling method based on Verilog-A, which comprises the following steps: model parameter definition and initialization; judging the state of the single-photon avalanche diode, if the avalanche is closed, performing statistical model calculation, judging whether the avalanche state is opened according to the statistical model calculation result, if the avalanche is opened, performing electrical model calculation, updating the avalanche state according to the electrical model calculation result and the quenching threshold current based on Gaussian distribution, and outputting each current; the statistical model calculation comprises calculating the photon detection event time, the dark count event occurrence time and the post-pulse trigger time; the electrical model calculation comprises calculating the leakage current and the segmented avalanche current, and calculating the junction charge of the SPAD cathode-anode, the parasitic capacitance charge of the SPAD cathode-substrate and the parasitic capacitance charge of the SPAD anode-substrate, so as to calculate the corresponding current according to the charge-current relationship. The application can comprehensively reflect the working characteristics of the device.
Owner:XIDIAN UNIV
Intensity imaging and depth sensing with histogram overflow prevention
Depth and imaging pixels include Single-Photon Avalanche Diode (SPAD) micropixels. A memory stores histogram data and intensity data. Timed memory selection logic is configured to generate the histogram data and the intensity data.
Owner:META PLATFORMS TECHNOLOGIES LLC
Single-photon avalanche diodes
The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a second deep trench structure in the semiconductor substrate surrounding the first deep trench structure, the second deep trench structure having a conductive material and a material of a second polarity; and contacts to both the first deep trench structure and the second deep trench structure.
Owner:GLOBALFOUNDRIES SINGAPORE PTE LTD
A SPAD coarse-fine histogram synchronous quantization system based on pulse time interval weighting
This invention discloses a SPAD coarse and fine histogram synchronous quantization system based on pulse time interval weighting. The system receives photon trigger events from a single-photon avalanche diode (SPAD) via a pulse preprocessing module, preprocesses these events, and outputs a weighted time interval. A fine photon event measurement module performs fine histogram statistics, filtering reconstruction, and peak calculation on the weighted time interval, outputting a denoised fine histogram and an overflow flag. A coarse photon event measurement module performs distribution statistics based on the weighted time interval and a second time interval between the measured photon trigger time and the laser emission time, outputting a coarse histogram. A time-of-flight calculation module calculates the time of flight based on the denoised fine histogram, the overflow flag, and the coarse histogram, outputting the target time of flight. This invention reduces histogram storage resource consumption through synchronous quantization of coarse and fine histograms, while simultaneously improving the measurement frame rate compared to step-by-step histogram calculations.
Owner:XIDIAN UNIV
Data compression circuit and method for a single photon avalanche diode array
ActiveCN121645033Breduce data volumeSolve the data transmission bottleneck problemDigital video signal modificationData compressionSingle-photon avalanche diode
The application relates to a data compression circuit and method suitable for a single photon avalanche diode array, wherein the circuit comprises: a pixel array, which has M rows and N columns of pixels in common; a multi-stage compression circuit, which comprises a plurality of compression buffer circuits connected in sequence, each stage of the compression buffer circuits comprises a plurality of first storage areas for storing TDC data, and address bits for storing positions of the TDC data corresponding to the pixels in the pixel array, the multi-stage compression circuit reads the TDC data of the pixel array row by row, and outputs the multi-stage compressed data to a subsequent circuit. Compared with the prior art, the application greatly compresses the pixel data in digital form, reduces the data transmission amount, solves the data transmission bottleneck problem of a large-scale array, and provides key technical support for a high-performance single photon detection system.
Owner:FUDAN UNIVERSITY
Dome lens and guard ring for single photon avalanche diode photodetectors and related methods
The present disclosure relates to a dome lens and guard ring for single photon avalanche diode photodetectors and related methods. A structure includes at least one single photon avalanche diode (SPAD), at least one dome lens positioned over each SPAD, and a metal guard ring surrounding each SPAD. A front-side illuminated SPAD photodetector and a method of forming the structure are also provided. The dome lens, together with the metal guard ring, improves SPAD efficiency in terms of photo-detection probability (PDP) and light absorption with minimal area increase.
Owner:GLOBALFOUNDRIES SINGAPORE PTE LTD
Deep trench isolation structures for a single-photon avalanche diode
Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure comprises a semiconductor layer on a top surface of a semiconductor substrate, a light-absorbing layer on a first portion of the semiconductor layer, a dielectric layer on a second portion of the semiconductor layer, and a doped region in the semiconductor substrate adjacent to the semiconductor layer. The structure further comprises a deep trench isolation structure that penetrates through the dielectric layer and the second portion of the semiconductor layer to the doped region. The deep trench isolation structure includes a conductor layer and a dielectric liner, the dielectric liner includes a portion between the conductor layer and the semiconductor layer, and the conductor layer is connected to the first doped region.
Owner:GLOBALFOUNDRIES SINGAPORE PTE LTD
Dome-shaped lens(ES) and guard ring for single-photon avalanche diode photodetector and related method
A structure includes at least one single-photon avalanche diode (SPAD), at least one dome-shaped lens over each SPAD, and a metal guard ring surrounding each SPAD. A front-side illuminated SPAD photodetector and a method of forming the structure is also provided. The dome-shaped lens(es) with the metal guard ring improve SPAD efficiency in terms of photo detection probability (PDP) and light absorption with minimal increase in area.
Owner:GLOBALFOUNDRIES SINGAPORE PTE LTD
A single photon avalanche diode pixel structure
The application discloses a single photon avalanche diode pixel structure, which comprises a silicon substrate with a first type of doping, and an avalanche junction doping area with a second type of doping; an avalanche junction area below the avalanche junction doping area is separated into multiple by an insulating isolation layer; the top of the silicon substrate has a pixel top heavily doped area with the first type of doping, both sides have pixel sidewall heavily doped areas with the first type of doping, and the bottom has a pixel bottom heavily doped area with the first type of doping; further comprising: a first electrode located in the pixel sidewall heavily doped area, a sidewall electrode extending downward along the pixel sidewall heavily doped area, and a second electrode located in the avalanche junction area. The application adopts discrete distribution of the avalanche junction, achieves the purpose of reducing the area of the avalanche junction and the junction capacitance, suppresses the after-pulse of the device, and reduces the dead time of the device during detection.
Owner:SHENZHEN ANSIJIANG TECH CO LTD
A single photon avalanche diode unit device two-dimensional scanning test system
ActiveCN122150801ATesting optical propertiesIndividual semiconductor device testingBeam splitterOptical power meter
The application relates to a single-photon avalanche diode unit device two-dimensional scanning test system, which comprises an electric displacement table, a signal generator, a time delay device, a laser source and a beam splitter, an excitation light path, a quenching circuit, an optical power meter and a frequency meter, and is controlled by an upper computer. During work, the displacement table drives the device to step by step move, and a signal chain is triggered after each position: the signal generator outputs a square wave and a synchronous enable signal, the time delay device receives the square wave and the synchronous enable signal to generate a second enable signal for triggering the laser and a delayed quenching signal. After being split, the laser is focused and irradiated on the device through the excitation light path, and the other laser is monitored by the optical power meter. The quenching circuit outputs the photoelectric response of the device to the frequency meter for counting under the enablement of the quenching signal. The response characteristic value of the point can be calculated through the measured optical power and the response event number of each position, and the upper computer fuses all position data to form a two-dimensional response matrix, so that the position and shape of the photosensitive area are non-destructively, quickly and intuitively represented.
Owner:FUDAN UNIVERSITY
Integrated ic single photon avalanche diode and photon detection system
PendingCN122180171AElectromagnetic wave reradiationRadiation intensity measurementElectron holeSingle-photon avalanche diode
This application provides an integrated IC single-photon avalanche diode and a photon detection system, relating to the field of semiconductor technology. The single-photon avalanche diode includes: a substrate; an epitaxial layer formed on the substrate; and a first P-type well, a first N-type well, and a second P-type well formed within the epitaxial layer; the first N-type well and the second P-type well are located on the side of the first P-type well facing away from the substrate and are in contact with the first P-type well; the second P-type well surrounds the first N-type well, and the second P-type well and the N-type well are spaced apart to form a protective ring structure; the first P-type well and the first N-type well form an avalanche PN junction; after incident photons are absorbed in the first P-type well, electron-hole pairs are generated, wherein electrons, as minority carriers, are accelerated in the depletion region of the avalanche PN junction, triggering avalanche multiplication. This application provides a technical solution that uses electrons as avalanche trigger carriers, fundamentally improving the avalanche triggering probability.
Owner:ZHUHAI NANXIN SEMICON TECH CO LTD
Single-photon avalanche diode pixel array and method for manufacturing same
PCT designated stageWO2026155331A1Single-photon avalanche diodeAvalanche diode
The purpose of an embodiment of the present invention is to provide a single-photon avalanche diode pixel array comprising: a substrate including an avalanche amplification region; a first insulating layer disposed on the substrate and having a trench formed in a region corresponding to the avalanche amplification region; a short-wavelength absorption layer filling the inside of the trench; and a first metal oxide layer formed between the first insulating layer and the short-wavelength absorption layer inside the trench .
Owner:LX SEMICON CO LTD
Control circuit and electronic device
This application discloses a control circuit and an electronic device, belonging to the field of imaging technology for electronic devices. The control circuit includes: a single-photon avalanche diode dynamic vision sensing pixel array, comprising multiple single-photon avalanche diode dynamic vision sensing pixels, which are used to detect brightness change events in a scene and output event-related information; a global shutter readout circuit, coupled to the single-photon avalanche diode dynamic vision sensing pixel array, used to receive the event-related information and perform high-speed global shutter imaging on the event-related region; and a control module, coupled to both the single-photon avalanche diode dynamic vision sensing pixel array and the global shutter readout circuit, used to control the imaging area and operating mode of the global shutter readout circuit according to the event-related information, wherein the imaging area is the area where the event-related region is imaged.
Owner:VIVO MOBILE COMM CO LTD
Light sensing devices and methods of manufacture
A single photon avalanche diode (SPAD) image sensor including at least three device layers. The first device layer has an array of SPADs. The second device layer provides in-pixel circuitry for the SPADs. Row driver circuits, column readout circuits, and other circuits are in the third device layer or in a fourth device layer. The first device layer can be manufactured with a streamlined process that does not produce any transistors. The second device layer can be manufactured with a mature process technology that provides high voltage transistors. The third and optional fourth device layer can be manufactured with advanced process technology that provides high density transistors having lower operating voltages than are required for the in-pixel circuitry. This structure increases the number of SPAD pixels that can be provided per unit device area and is cost-effective.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
IMAGE SENSOR WITH IN-PIXEL HISTOGRAMM
UndeterminedDE102025109704A1Single-photon avalanche diodeTime gate
An imaging circuit arrangement is provided that includes an array of image pixels, each image pixel in the array including a single-photon avalanche diode (SPAD) coupled to a plurality of counters configured to obtain an in-pixel histogram, and a time-gate driver circuit arrangement configured to output a plurality of non-overlapping time-gate pulses to the plurality of counters. Each image pixel may further include a pulse generator having an input coupled to the SPAD. Each counter may have a first input coupled to an output of the pulse generator and a second input configured to receive one of a plurality of time-gate signals. Each counter may further include an analog storage circuit comprising one or more capacitors.
Owner:SEMICON COMPONENTS IND LLC
Silicon photomultiplier and imaging system
PendingCN122180169ASilicon photomultiplierSingle-photon avalanche diode
The present disclosure relates to silicon photomultipliers and imaging systems. A silicon photomultiplier (SiPM) is disclosed. The SiPM includes a plurality of microcells coupled to a summing node of the SiPM. Each microcell of the plurality of microcells includes a single photon avalanche diode and a passive quenching device coupled in series with the single photon avalanche diode. Each microcell of the plurality of microcells also includes a current mirror configured to generate a microcell output current based on a current from the single photon avalanche diode.
Owner:SEMICON COMPONENTS IND LLC
Analog counting device based on feedback charge injection, ranging device and electronic device
PendingCN122429918ACharge injectionSingle-photon avalanche diode
The application discloses a kind of analog counting device based on feedback charge injection, ranging device and electronic equipment, analog counting device includes single-photon avalanche diode, single-photon avalanche diode exports initial signal corresponding with avalanche event;Quenching and reset circuit, quenching and reset circuit quench initial signal and output count trigger signal;Analog counter, after receiving count trigger signal, a fixed charge packet is released to integration node by feedback charge injection, so that the corresponding step change of output voltage is generated to carry out analog field accumulation to photon counting event.The application can realize the step length stability and linearity promotion of analog counter in event accumulation process;To avoid output saturation and expand dynamic range, the application also introduces self-flipping and chopping control in analog counter, automatically flips when output voltage is close to threshold value, so high dynamic range is obtained, and can be used for indirect time-of-flight ranging.
Owner:HONG KONG UNIV OF SCI & TECH (GUANGZHOU)