Patents
Literature
275 results about "Single-photon avalanche diode" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
A single-photon avalanche diode (SPAD) is a solid-state photodetector in which a photon-generated carrier (via the internal photoelectric effect) can trigger a short-duration but relatively large avalanche current. This avalanche is created through a mechanism called impact ionization, whereby carriers (electrons and/or holes) are accelerated to high kinetic energies through a large potential gradient (voltage). If the kinetic energy of a carrier is sufficient (as a function of the ionization energy of the bulk material) further carriers are liberated from the atomic lattice. The number of carriers thus increases exponentially from, in some cases, as few as a single carrier. This mechanism was observed and modeled by John Townsend for trace-gas vacuum tubes, becoming known as a Townsend discharge, and later being attributed to solid-state breakdown by K. McAfee. This device is able to detect low-intensity ionizing radiation, including: gamma, X-ray, beta, and alpha-particle radiation along with electromagnetic signals in the UV, Visible and IR (in the optical case this can be down to the single photon level). SPADs are also able to distinguish the arrival times of events (photons) with a timing jitter of a few tens of picoseconds.
Single-photon avalanche diode and single-photon detector
The invention provides a single-photon avalanche diode and a single-photon detector, and relates to the technical field of semiconductor photoelectric detection, and the single-photon avalanche diode comprises a plurality of avalanche diode units. The avalanche diode units are sequentially stacked in the propagation direction of incident light to be detected. Each avalanche diode unit is provided with an electric field control module which is used for independently adjusting the bias electric field of each avalanche diode unit. In the propagation direction of the incident light, the avalanche diode unit of the next stage is used for absorbing the remaining photons which are not absorbed by the avalanche diode unit of the previous stage and generating carriers, so that avalanche current is formed. The light absorption wavelength ranges of adjacent avalanche diode units are at least partially overlapped. The single-photon avalanche diode solves the problem that the existing single-photon avalanche diode cannot balance high detection efficiency and low dark current, and achieves the purpose of improving the detection efficiency of a single-photon detector on the premise of not increasing the dark current.
Owner:MOZI LABORATORY
Active quenching and reset schemes for SPAD pixel for low energy per pulse (EPP) and high maximum count rate (MCR)
InactiveUS20250386600A1Photometry electrical circuitsRadiation controlled devicesSingle-photon avalanche diodeControl signal
Disclosed herein is a single photon avalanche diode (SPAD) pixel circuit, including a SPAD having an anode coupled to a negative voltage and a cathode and a cascode transistor having a drain coupled to the cathode of the SPAD, a gate controlled by a cascode control signal, and a source. A readout circuit is coupled to the source of the cascode transistor and configured to detect a voltage change at the source of the cascode transistor and generate a pulse indicating an occurrence of an avalanche event. An active quenching circuit is coupled to the cathode of the SPAD and configured to detect an onset of the avalanche event and pull the cathode of the SPAD to a negative voltage to quench the avalanche event.
Owner:STMICROELECTRONICS (RES & DEV) LTD +1
Dynamic output bias signal for a single photon avalanche diode (SPAD) based photon detection circuit
An example photon detection circuit, a SPAD sensing device, and a direct time-of-flight detection system comprising a SPAD sensing device configured to operate in a high illumination environments, are provided. The example photon detection circuit includes SPAD circuitry configured to generate a photon detection signal based on a SPAD bias voltage and the number of photons encountering the SPAD. The photon detection circuitry further includes output bias circuitry configured to generate a dynamic output bias signal, wherein the dynamic output bias signal is updated based on the number of photons encountering the SPAD. The example photon detection circuitry further includes output signal circuitry configured to generate a photon detection output signal in an instance in which the photon detection signal exceeds an output signal circuitry threshold, wherein the output signal circuitry threshold is based on the dynamic output bias signal.
Owner:STMICROELECTRONICS INT NV +1
Imaging sensor device using an array of single-photon avalanche diode photodetectors
The invention relates to an Imaging sensor device in a stacked arrangement comprising:a pixel array tier comprising a plurality of pixel segments each having a plurality of pixels for photon detection each providing a digital pixel output;a processing tier comprising a number of processing cores each associated with one of the plurality of pixel segments to receive the pixel outputs of the pixels of the respective pixel segment, wherein the processing cores are each in bidirectional communication with one or more neighboring processing cores,wherein the processing cores are each configured to receive pixel outputs of the pixels of the associated pixel segments and to distribute processing of pixel outputs between the processing core and the at least one of the neighboring processing cores as neighboring processing cores.
Owner:ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
Single photon avalanche diode macropixel
A macropixel is disclosed. The macropixel comprises a plurality of pixels, each pixel comprising a Single Photon Avalanche Diode (SPAD). The macropixel also comprises a memory configured to store: a plurality of counts, each count associated with a pixel of the plurality of pixels; and a plurality of saturation bits, each saturation bit associated with a count of the plurality of counts. The macropixel also comprises saturation detection circuitry configured to gate a recharge of each SPAD based on a state of the respective saturation bit.
Owner:THE UNIV COURT OF THE UNIV OF EDINBURGH
Performance simulation method and device, computer equipment and storage medium
PendingCN120930304ADesign optimisation/simulationProbabilistic CADSingle-photon avalanche diodeLidar
The invention provides a performance simulation method and device for an SPAD laser radar, computer equipment and a storage medium, and the method comprises the steps: obtaining the number of photons received by a single photon avalanche diode (SPAD) array, and determining the number of photons received by a single SPAD at a current moment; determining a target avalanche probability of the single SPAD according to the photon number received by the single SPAD and a pre-constructed target mapping relation between the photon number and the avalanche probability; according to the target avalanche probability and the total number of SPAD, calculating the avalanche number probability of avalanche of each SPAD with different numbers, and generating initial avalanche probability distribution of the SPAD array; performing iterative operation by using the initial avalanche probability distribution to obtain target avalanche probability distribution of the SPAD array; according to the target avalanche probability distribution, the range finding performance of the SPAD laser radar is predicted, and the range finding performance of the SPAD laser radar at least comprises the limit detection distance of the SPAD laser radar.
Owner:ZVISION TECH CO LTD
Data compression circuit and method suitable for single photon avalanche diode array
The invention relates to a data compression circuit and method suitable for a single photon avalanche diode array, and the circuit comprises a pixel array which is provided with M rows and N columns of pixels; the multi-stage compression circuit comprises a plurality of compression cache circuits connected in sequence, each stage of compression cache circuit comprises a plurality of first storage areas used for storing TDC data and address bits used for storing the positions of pixels corresponding to the TDC data in the pixel array, and the multi-stage compression circuit reads the TDC data of the pixel array line by line. And after multi-stage compression, the signals are output to a post-stage circuit. Compared with the prior art, the pixel data in a digital form is greatly compressed, the data transmission quantity is reduced, the data transmission bottleneck problem of a large-scale array is solved, and a key technical support is provided for a high-performance single-photon detection system.
Owner:FUDAN UNIVERSITY
Stacked Silicon Photomultipliers
PendingUS20250318310A1Semiconductor/solid-state device detailsSolid-state devicesSilicon photomultiplierSingle-photon avalanche diode
A semiconductor device may include a plurality of single-photon avalanche diode (SPAD) pixels. The semiconductor device may be a backside device that includes a sensor wafer stacked with an integrated passive component (IPC) wafer. The sensor wafer may include the SPAD pixels in an array across the sensor wafer. The IPC wafer may include active microcells that include quench resistors and dummy microcells that omit or disconnect the quench resistors. The sensor wafer may be bonded to the IPC wafer through hybrid bonding. The regions with active microcells may form active areas of the semiconductor device, while the regions with dummy microcells may form inactive areas. In this way, the active areas and inactive areas of the semiconductor device may be configurable by adjusting the active and dummy microcells of the IPC wafer.
Owner:SEMICON COMPONENTS IND LLC
Elastic fiber optic, time-of-flight sensor for long distance landslide monitoring with sub-mm precision
PCT designated stageWO2026010766A1Subsonic/sonic/ultrasonic wave measurementForce measurement by measuring optical property variationTime of flight sensorSingle-photon avalanche diode
Disclosed are systems and methods that employ elastic fiber optic, time-of-flight sensors for long distance landslide monitoring with sub-mm precision. The time-of-flight (ToF) sensor is integrated in conjunction with a single-photon avalanche diode (SPAD). By coupling both the emission source and the detector with a stretchable optical fiber, our inventive systems and methods continuously monitor the length of the stretchable optical fiber by measuring a traveling time of an optical pulse traversing the stretchable optical fiber. A significant, detectable change in the length of the stretchable optical fiber – indicative of ground movement or deformation, triggers an alarm, providing an early warning for potential landslides. As such, systems and methods according to aspects of the present disclosure provide a reliable, sensitive, precise, cost-effective, real-time solution for landslide detection and monitoring – a problem that has plagued the art.
Owner:NEC LABORATORIES AMERICA INC
System for implementing quantum key distribution (QKD) in a data center environment
Systems and methods are described for implementing quantum key distribution (QKD) in a data center environment. An example quantum transmitter includes an on-chip semiconductor laser as a light source to generate photons, quantum state preparation circuitry configured to receive a sequence of bits, map each bit to a quantum state and a measurement basis, and encode the quantum state of each bit onto a corresponding photon to generate a qubit, and a quantum channel interface configured to transmit the qubit to a quantum receiver via a quantum communication channel. An example quantum receiver includes a quantum channel interface to receive qubits, a silicon-based single photon avalanche diode (SPAD) as a photon detector for qubit detection, and quantum state measurement circuitry that is configured to decode the state of each qubit based on a selected measurement basis.
Owner:MELLANOX TECHNOLOGIES LTD(IL)
Avalanche signal reading circuit and single photon avalanche detector
The invention provides an avalanche signal reading circuit and a single photon avalanche detector, which can be applied to the technical field of weak light detection. The readout circuit includes: a gating signal generator configured to generate a gating signal; under the condition that a gating signal is applied to the single photon avalanche diode, an output signal generated by the single photon avalanche diode comprises peak noise with time domain symmetry and an avalanche signal; the beam splitter is configured to receive an output signal of the single photon avalanche diode and perform beam splitting on the output signal to obtain a first beam splitting signal and a second beam splitting signal; the beam splitting signal adjusting module is configured to enable the peak noise carried by the first beam splitting signal and the peak noise carried by the second beam splitting signal to have matched amplitude and relative delay; and the beam combiner is configured to combine the adjusted first beam splitting signal and the adjusted second beam splitting signal so as to obtain an avalanche signal after peak noise suppression.
Owner:UNIV OF SCI & TECH OF CHINA
Distributed optical fiber temperature sensing system based on photon counting and measurement method
PendingCN121230908AThermometers using physical/chemical changesPhotometry electrical circuitsSingle-photon avalanche diodeOptical attenuator
The invention relates to the technical field of optical fiber sensing, and discloses a distributed optical fiber temperature sensing system based on photon counting and a measurement method, which can remarkably improve the sensing distance, the spatial resolution and the spatial positioning precision. According to the scheme, the method comprises the following steps: aiming at different segments of a sensing optical fiber, controlling the attenuation amount of a variable optical attenuator, and carrying out detection and time-dependent single photon counting on backscattered light from different segments on the sensing optical fiber by utilizing a single photon avalanche diode and a time-dependent single photon counter, and temperature distribution information of the sensing optical fiber is demodulated based on a time correlation single photon counting result.
Owner:CAS QUANTUM NETWORK CO LTD +1
Single photon avalanche diode, photoelectric detection device and electronic equipment
The utility model provides a single-photon avalanche diode, a photoelectric detection device and electronic equipment. The single-photon avalanche diode comprises a substrate layer, a first doped region, a second doped region, an isolation region, a first electrode and a second electrode, the first doped region is located above the substrate layer, the second doped region is located above the first doped region, and the net doping type of the first doped region is opposite to that of the second doped region, so that a PN junction is formed between the first doped region and the second doped region, and depletion regions are formed on two sides of an interface of the PN junction; the isolation region is attached to the outer sides of the first doped region and the second doped region in the horizontal direction, and is constructed to at least cover the region between the upper interface of the second doped region and the lower interface of the first doped region in the height direction; the first electrode and the second electrode are configured to apply a reverse bias voltage to the PN junction to form an avalanche region in the depletion region. According to the single-photon avalanche diode, the size of a middle strong longitudinal electric field region cannot be affected when the overall size is reduced.
Owner:SHENZHEN FUSHI TECH CO LTD
Single-photon avalanche diode structure and manufacturing process
An SPAD with a mesa structure has an etch stop layer that allows a first high-precision etch process that forms substrate contact plugs around the mesa to be combined with a second high-precision etch process that forms a metal grid. The etch stop layer is provided with a first elevation adjacent the substrate contact plugs and a second elevation adjacent the metal grid. The second elevation is greater than the first elevation. In a process, holes for the substrate contact plugs and trenches for the metal grid are etched down to the etch stop layer. After a break-through etch, a third etch process deepens the holes and the trenches to their final depths. The metal grid may land on a second etch stop layer that is absent from an area around the substrate contact plugs. This structure and process provide lower cost SPADs with mesa structures.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Hybrid solid-state lidar with increased signal dynamic range and control method
ActiveUS12566252B1Optical rangefindersElectromagnetic wave reradiationLaser transmitterSingle-photon avalanche diode
The present disclosure provides a hybrid solid-state lidar with an increased signal dynamic range and a control method. The hybrid solid-state lidar includes: a laser transmitter unit, a laser receiver unit, a transmitting mirror, a receiving mirror, and a rotating polygon mirror, where the laser transmitter unit includes multiple power-and-pulse-width-adjustable vertical cavity surface emitting lasers (VCSELs); the laser receiver unit adopts a single photon avalanche diodes (SPADs) array sensor; and the laser transmitter unit performs at least one emission cycle during a single measurement. By dynamically adjusting emission parameters within a single ranging cycle, the present disclosure expands the signal dynamic range in a time coherent single photon counting (TCSPC) process, enhancing measurement precision of the lidar in both long-and short-range ranging.
Owner:PHOTONAI TECH INC
Lighting circuit, light sensor, system and method for measuring a distance
PCT designated stageWO2025191045A1Electromagnetic wave reradiationSingle-photon avalanche diodeHemt circuits
The invention relates to a lighting circuit having a light sensor configured to measure a delay of reception of light that is being modulated based on a binary code after a reflection, said binary code being repeated for a predetermined time period T. The light sensor comprises: - a single-photon avalanche diode (SPAD) circuit (320) comprising a SPAD polarized by a voltage modulated by the code delayed of time k*ΔT, - an integrator (330) connected to the SPAD circuit (320) for providing an integration value of the conduction time of a SPAD (321) for each time the code is completely received.
Owner:VALEO VISION SA
High over-bias variable load quenching device for single photon avalanche diode
PendingCN121804654AElectric pulse generatorPhotometry electrical circuitsSingle-photon avalanche diodePhoton detection
The invention discloses a high over-bias variable load type quenching device for a single photon avalanche diode, and the device comprises a quenching unit which is used for changing the resistance of a variable load tube to infinity to rapidly cut off the avalanche current when the single photon avalanche diode is avalanche, thereby achieving the variable load type quenching; the reset unit is used for generating a delay-adjustable reset signal after quenching is completed, and controlling the single photon avalanche diode to recover to a to-be-detected state; and the high over-bias supporting unit is used for enabling the two ends of the single photon avalanche diode to obtain over-bias higher than the power supply voltage under the low-voltage process. The quenching and resetting time of the quenching circuit is effectively shortened through a simple circuit structure, and meanwhile, the photon detection probability can be greatly improved through the high over-bias voltage which is nearly twice of the power supply voltage.
Owner:NO 24 RES INST OF CETC
Single photon avalanche diode and preparation method thereof
The single-photon avalanche diode comprises a substrate and an epitaxial layer, the epitaxial layer is arranged on the surface of one side of the substrate, a first well region is formed on the side, away from the substrate, of the epitaxial layer, and a second well region of an annular structure is formed in the first well region; a first heavily doped region is arranged at one end, deviating from the substrate, of the second well region, and covers an inner ring region of the second well region; the distance between the surface of the side, facing the substrate, of the second well region and the contact surface of the first heavily doped region and the second well region is a first distance, the distance between the surface of the side, facing the substrate, of the first well region and the contact surface of the first heavily doped region and the second well region is a second distance, and the first distance is smaller than the second distance. According to the scheme, the problem that it is difficult to balance the low power consumption and the high performance of the single-photon avalanche diode can be solved.
Owner:HANGZHOU HIKVISION DIGITAL TECHNOLOGY CO LTD
Photon detection efficiency (PDE) modulation with multi-junction single-photon avalanche diode (SPAD) pixels
To provide a technique of photon detection efficiency (PDE) modulation with multi-junction single-photon avalanche diode (SPAD) pixels.SOLUTION: A sensing device includes an array of sensing elements and a bias control circuit. Each sensing element of the array of sensing elements includes (i) a photosensitive material, which is configured to generate photoelectrons in response to incident optical radiation, and (ii) a plurality of avalanche diodes, which are disposed at different, respective locations within the sensing element in electrical communication with the photosensitive material and are configured, when reverse-biased, to generate electrical avalanches in response to the generated photoelectrons. The bias control circuit is configured to selectively set respective reverse-bias voltage levels of the avalanche diodes within each sensing element to different, respective values.SELECTED DRAWING: Figure 1
Owner:APPLE INC
Superlattice multiplication layer avalanche diode and preparation method thereof
This invention discloses a superlattice multiplication layer avalanche diode and its fabrication method. The single-photon avalanche diode includes a graphene transparent electrode and, from bottom to top, an InP substrate, an n-type buffer layer, a superlattice absorption region, a p-type charge layer, a superlattice gradient region, a superlattice multiplication region, a p-type contact layer with a p-type contact window, and a passivation layer. The graphene transparent electrode is grown on the passivation layer and the p-type contact window, forming an ohmic contact with the p-type contact region. Magnetic metal nanoparticles that generate a local magnetic field are embedded in the superlattice multiplication region. The magnetic metal nanoparticles are uniformly distributed in-plane within a depth range of 5-400 nm from the interface in the light-gathering direction of the superlattice multiplication region. This invention combines the internal bandgap optimization of the superlattice with the external limiting pump capability of graphene to produce a synergistic effect, providing a single-photon avalanche diode with low dark count rate, weak afterpulse effect, high detection efficiency, and the ability to operate at relatively high temperatures.
Owner:ZHONGSHAN DEHUA CHIP TECH CO LTD
Control circuit and distance measuring system
ActiveUS12477840B2Optical rangefindersPhotometry electrical circuitsSingle-photon avalanche diodeHemt circuits
The control circuit according to the present disclosure includes a passive circuit (10) and an active circuit (20). The passive circuit (10) is configured to: supply current to a Single Photon Avalanche Diode (SPAD) element (6a) from a supply path (Rp); and output a first pulse signal (P1) according to a signal Generated in the SPAD element (6a). The active circuit (20) is configured to: supply current to the SPAD element (6a) selectively from among a plurality of supply paths; and output a second pulse signal (P2) according to a signal generated in the SPAD element (6a).
Owner:SONY SEMICON SOLUTIONS CORP
Multi-mode detection single photon avalanche diode front-end circuit
PendingCN122151038AWave based measurement systemsPhotometry electrical circuitsSingle-photon avalanche diodeLinear control
The application relates to a single photon avalanche diode front-end circuit for multi-mode detection, which integrates a quenching, delay control and self-resetting module composed of basic MOS tubes, inverters and logic gates. Three control signals are output by a controller to configure modes: in a synchronous gating mode, the related MOS tubes are sequentially controlled to be turned on and turned off in a gating mode; in an asynchronous free-running mode, the related control levels are fixed, and the reset delay is linearly controlled by adjusting the third control signal. The application realizes dual-mode detection by using a single circuit structure, shares the core quenching path, has the advantages of small area, low power consumption and wide adjustable range of dead time, and is suitable for large-scale SPAD array integration.
Owner:FUDAN UNIVERSITY
A single photon avalanche diode and a light detection device
This invention discloses a single-photon avalanche diode and a photodetector. The single-photon avalanche diode includes a substrate, a first p-type epitaxial layer, an n-type buried layer, a p-type buried layer, a second p-type epitaxial layer, an anode contact region, and a cathode contact region. The first p-type epitaxial layer is located on one side of the substrate; the n-type buried layer and the p-type buried layer are located on the side of the first p-type epitaxial layer away from the substrate, and the n-type buried layer and the p-type buried layer form an abrupt junction; the second p-type epitaxial layer is located on the side of the p-type buried layer away from the n-type buried layer; the anode contact region is located on the side of the second p-type epitaxial layer away from the p-type buried layer and is coupled to the p-type buried layer; the cathode contact region is located on the side of the n-type buried layer away from the substrate and is coupled to the n-type buried layer. The technical solution of this invention can improve the photodetector capability of the device.
Owner:SHANGHAI SILICON PRINTING TECH CO LTD
Insulation defect detection method based on quantum color center technology
The invention discloses an insulation defect detection method based on a quantum color center technology, and belongs to the field of state monitoring. Comprising the steps that a quantum sensing module and an excitation and signal acquisition module are adopted to detect the insulation defect of the electrical equipment, the quantum sensing module adopts a silicon carbide color center chip, a double-vacancy defect is prepared through an ion implantation and annealing process, a substrate material adopts AlN ceramic, and a protective layer adopts an aerogel composite structure; a DPSS laser is adopted as a light source of a laser excitation chain of an excitation and signal acquisition module, and a single-photon avalanche diode array is adopted as a detector of a fluorescence acquisition chain; a signal processing flow is based on silicon carbide double-vacancy color center fluorescence lifetime attenuation characteristics, partial discharge detection is carried out, dynamic change and frequency spectrum characteristics of a color center fluorescence lifetime tau value are analyzed, a multi-physics field decoupling algorithm combining time domain fluorescence lifetime analysis, frequency domain vibration spectrum extraction and a machine learning classification model is adopted, and a silicon carbide double-vacancy color center fluorescence lifetime tau value is analyzed. And high-precision identification and positioning of discharge types such as corona discharge and creeping discharge are realized.
Owner:STATE GRID SHANGHAI MUNICIPAL ELECTRIC POWER CO +1
A single-photon tof image sensor for lidar
The application discloses a kind of single-photon TOF image sensors for laser radar, including reconfigurable pixel array, dynamic reconfigurable circuit, real-time feedback control system;Reconfigurable pixel array is constructed based on field programmable array FPGA technology, each pixel unit is integrated with configurable single-photon avalanche diode SPAD, amplifier, integrator and control logic circuit, by programming to the internal logic of FPGA, change pixel operating mode and parameter, and pixel unit can be configured as unit with specific function, pixel for edge detection and motion detection, in the application, flexible reconfigurable pixel configuration: with field programmable array FPGA technology, the photosensitive area of pixel unit, integration time and gain and other key parameters can be flexibly adjusted according to actual demand, pixel unit can also be configured as unit with specific function such as edge detection, motion detection.
Owner:BEIJING PURER TECH CO LTD
Depth compensation method of direct time of flight (dTOF) sensor and electronic equipment
PendingCN121693679AElectromagnetic wave reradiationTime of flight sensorSingle-photon avalanche diode
The invention discloses a depth compensation method of a direct time of flight (dTOF) sensor and electronic equipment, and is suitable for the technical field of computer application. The method comprises: in response to a trigger operation on a camera application, driving a dTOF sensor to acquire original image data (201); acquiring a current actual driving voltage of a single photon avalanche diode (SPAD) in the dTOF sensor (202); acquiring a current expected driving voltage of the SPAD (203); and performing depth compensation on the original image data according to the actual driving voltage and the expected driving voltage to generate a target depth map (204). Therefore, the depth information offset caused by the adjustment error of the SPAD driving voltage is corrected through the deviation between the actual value and the theoretical value of the SPAD driving voltage, so that the accuracy of the depth information collected by the dTOF sensor is improved, and the distance measurement precision of the dTOF sensor is improved.
Owner:HONOR DEVICE CO LTD
Range hood and range hood control method and device
PendingCN121655011ADomestic stoves or rangesLighting and heating apparatusLaser transmitterSingle-photon avalanche diode
The invention discloses a range hood and a range hood control method and device, and belongs to the technical field of kitchen appliances. The range hood comprises a gesture detection module and a controller. The gesture detection module comprises a single photon avalanche diode and a laser transmitter; the gesture detection module is used for controlling the laser transmitter to transmit a laser signal to a target direction of the range hood, and receiving a reflected light signal formed by reflecting the laser signal through a hand of a user through a single photon avalanche diode; generating a depth map including the hand of the user according to the time difference between the laser signal and the reflected light signal; sending the depth maps of a plurality of consecutive moments to a controller; the controller is used for recognizing the depth maps at multiple continuous moments through a preset gesture recognition model to obtain a user gesture; and generating a control instruction corresponding to the user gesture to control the running state of the range hood. The non-contact control of the range hood can be realized, and the operation convenience of the range hood is improved.
Owner:GUANGDONG CHENGYI TECH CO LTD
Single-photon avalanche diode (SPAD) sensor, semiconductor structure including SPAD sensor, and method for forming the same
PendingUS20260047214A1Radiation controlled devicesSemiconductor devicesSingle-photon avalanche diodeSemiconductor structure
A semiconductor structure includes a first well in a semiconductor substrate, a plurality of fin-like doped regions over and coupled to the first well in the semiconductor substrate, and a second well over the first well and the plurality of fin-like doped regions in the semiconductor substrate. The first well and the plurality of fin-like doped regions comprise a first conductivity type, and the second well comprises a second conductivity type complementary to the first conductivity type. A first interface is formed between the second well and the first well, a second interface is formed between the second well and the plurality of fin-like doped regions, and each of the first interface and the second interface has a non-planar configuration.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
A key parameter testing system for a fiber type single photon avalanche diode and a method of using the same
This application provides a key parameter testing system and method for fiber-optic single-photon avalanche diodes (SPADs). The system uses a testing module to drive multiple SPADs under test, generates laser trigger signals based on parameter testing requests, and acquires pulse parameters for each SPAD under test under different testing modes with and without light source illumination. A laser generation module generates an initial pulse signal based on the laser trigger signal; a laser adjustment and transmission module adjusts the light attenuation value of the initial pulse laser and separates it into multiple test light sources with equal laser power; a control module monitors the laser power of the laser generation module and configures the laser adjustment parameters of the laser adjustment and transmission module; and the system determines the key parameters of each SPAD under test based on the pulse parameters. The system provided in this application can quickly detect the key parameters of multiple SPADs while ensuring detection accuracy, and the parameter testing process is simple and intuitive.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
Single-photon avalanche diode-based image sensor and method for driving same
According to an embodiment of the present disclosure, a single-photon avalanche diode-based image sensor may comprise: a single-photon avalanche diode (SPAD) which generates a plurality of pulses corresponding to a plurality of photons, received during a predetermined exposure time, respectively; a front-end circuit which receives a set of pulses received during a partial time of the exposure time among the plurality of pulses; a counter which counts the number of pulses in the set of pulses; and a global clock which provides a plurality of clock pulses to the front-end circuit from after the partial time, wherein the quality of an image acquired using the SPAD is determined based on the timing of the global clock.
Owner:XO SEMICONDUCTOR INC