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194 results about "Single-photon avalanche diode" patented technology
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A single-photon avalanche diode (SPAD) is a solid-state photodetector in which a photon-generated carrier (via the internal photoelectric effect) can trigger a short-duration but relatively large avalanche current. This avalanche is created through a mechanism called impact ionization, whereby carriers (electrons and/or holes) are accelerated to high kinetic energies through a large potential gradient (voltage). If the kinetic energy of a carrier is sufficient (as a function of the ionization energy of the bulk material) further carriers are liberated from the atomic lattice. The number of carriers thus increases exponentially from, in some cases, as few as a single carrier. This mechanism was observed and modeled by John Townsend for trace-gas vacuum tubes, becoming known as a Townsend discharge, and later being attributed to solid-state breakdown by K. McAfee. This device is able to detect low-intensity ionizing radiation, including: gamma, X-ray, beta, and alpha-particle radiation along with electromagnetic signals in the UV, Visible and IR (in the optical case this can be down to the single photon level). SPADs are also able to distinguish the arrival times of events (photons) with a timing jitter of a few tens of picoseconds.
Active quenching and reset schemes for SPAD pixel for low energy per pulse (EPP) and high maximum count rate (MCR)
InactiveUS20250386600A1Photometry electrical circuitsRadiation controlled devicesSingle-photon avalanche diodeControl signal
Disclosed herein is a single photon avalanche diode (SPAD) pixel circuit, including a SPAD having an anode coupled to a negative voltage and a cathode and a cascode transistor having a drain coupled to the cathode of the SPAD, a gate controlled by a cascode control signal, and a source. A readout circuit is coupled to the source of the cascode transistor and configured to detect a voltage change at the source of the cascode transistor and generate a pulse indicating an occurrence of an avalanche event. An active quenching circuit is coupled to the cathode of the SPAD and configured to detect an onset of the avalanche event and pull the cathode of the SPAD to a negative voltage to quench the avalanche event.
Owner:STMICROELECTRONICS (RES & DEV) LTD +1
Dynamic output bias signal for a single photon avalanche diode (SPAD) based photon detection circuit
An example photon detection circuit, a SPAD sensing device, and a direct time-of-flight detection system comprising a SPAD sensing device configured to operate in a high illumination environments, are provided. The example photon detection circuit includes SPAD circuitry configured to generate a photon detection signal based on a SPAD bias voltage and the number of photons encountering the SPAD. The photon detection circuitry further includes output bias circuitry configured to generate a dynamic output bias signal, wherein the dynamic output bias signal is updated based on the number of photons encountering the SPAD. The example photon detection circuitry further includes output signal circuitry configured to generate a photon detection output signal in an instance in which the photon detection signal exceeds an output signal circuitry threshold, wherein the output signal circuitry threshold is based on the dynamic output bias signal.
Owner:STMICROELECTRONICS INT NV +1
Imaging sensor device using an array of single-photon avalanche diode photodetectors
The invention relates to an Imaging sensor device in a stacked arrangement comprising:a pixel array tier comprising a plurality of pixel segments each having a plurality of pixels for photon detection each providing a digital pixel output;a processing tier comprising a number of processing cores each associated with one of the plurality of pixel segments to receive the pixel outputs of the pixels of the respective pixel segment, wherein the processing cores are each in bidirectional communication with one or more neighboring processing cores,wherein the processing cores are each configured to receive pixel outputs of the pixels of the associated pixel segments and to distribute processing of pixel outputs between the processing core and the at least one of the neighboring processing cores as neighboring processing cores.
Owner:ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
Data compression circuit and method suitable for single photon avalanche diode array
The invention relates to a data compression circuit and method suitable for a single photon avalanche diode array, and the circuit comprises a pixel array which is provided with M rows and N columns of pixels; the multi-stage compression circuit comprises a plurality of compression cache circuits connected in sequence, each stage of compression cache circuit comprises a plurality of first storage areas used for storing TDC data and address bits used for storing the positions of pixels corresponding to the TDC data in the pixel array, and the multi-stage compression circuit reads the TDC data of the pixel array line by line. And after multi-stage compression, the signals are output to a post-stage circuit. Compared with the prior art, the pixel data in a digital form is greatly compressed, the data transmission quantity is reduced, the data transmission bottleneck problem of a large-scale array is solved, and a key technical support is provided for a high-performance single-photon detection system.
Owner:FUDAN UNIVERSITY
Elastic fiber optic, time-of-flight sensor for long distance landslide monitoring with sub-mm precision
PCT designated stageWO2026010766A1Subsonic/sonic/ultrasonic wave measurementForce measurement by measuring optical property variationTime of flight sensorSingle-photon avalanche diode
Disclosed are systems and methods that employ elastic fiber optic, time-of-flight sensors for long distance landslide monitoring with sub-mm precision. The time-of-flight (ToF) sensor is integrated in conjunction with a single-photon avalanche diode (SPAD). By coupling both the emission source and the detector with a stretchable optical fiber, our inventive systems and methods continuously monitor the length of the stretchable optical fiber by measuring a traveling time of an optical pulse traversing the stretchable optical fiber. A significant, detectable change in the length of the stretchable optical fiber – indicative of ground movement or deformation, triggers an alarm, providing an early warning for potential landslides. As such, systems and methods according to aspects of the present disclosure provide a reliable, sensitive, precise, cost-effective, real-time solution for landslide detection and monitoring – a problem that has plagued the art.
Owner:NEC LABORATORIES AMERICA INC
Avalanche signal reading circuit and single photon avalanche detector
The invention provides an avalanche signal reading circuit and a single photon avalanche detector, which can be applied to the technical field of weak light detection. The readout circuit includes: a gating signal generator configured to generate a gating signal; under the condition that a gating signal is applied to the single photon avalanche diode, an output signal generated by the single photon avalanche diode comprises peak noise with time domain symmetry and an avalanche signal; the beam splitter is configured to receive an output signal of the single photon avalanche diode and perform beam splitting on the output signal to obtain a first beam splitting signal and a second beam splitting signal; the beam splitting signal adjusting module is configured to enable the peak noise carried by the first beam splitting signal and the peak noise carried by the second beam splitting signal to have matched amplitude and relative delay; and the beam combiner is configured to combine the adjusted first beam splitting signal and the adjusted second beam splitting signal so as to obtain an avalanche signal after peak noise suppression.
Owner:UNIV OF SCI & TECH OF CHINA
Distributed optical fiber temperature sensing system based on photon counting and measurement method
PendingCN121230908AThermometers using physical/chemical changesPhotometry electrical circuitsSingle-photon avalanche diodeOptical attenuator
The invention relates to the technical field of optical fiber sensing, and discloses a distributed optical fiber temperature sensing system based on photon counting and a measurement method, which can remarkably improve the sensing distance, the spatial resolution and the spatial positioning precision. According to the scheme, the method comprises the following steps: aiming at different segments of a sensing optical fiber, controlling the attenuation amount of a variable optical attenuator, and carrying out detection and time-dependent single photon counting on backscattered light from different segments on the sensing optical fiber by utilizing a single photon avalanche diode and a time-dependent single photon counter, and temperature distribution information of the sensing optical fiber is demodulated based on a time correlation single photon counting result.
Owner:CAS QUANTUM NETWORK CO LTD +1
Single-photon avalanche diode structure and manufacturing process
An SPAD with a mesa structure has an etch stop layer that allows a first high-precision etch process that forms substrate contact plugs around the mesa to be combined with a second high-precision etch process that forms a metal grid. The etch stop layer is provided with a first elevation adjacent the substrate contact plugs and a second elevation adjacent the metal grid. The second elevation is greater than the first elevation. In a process, holes for the substrate contact plugs and trenches for the metal grid are etched down to the etch stop layer. After a break-through etch, a third etch process deepens the holes and the trenches to their final depths. The metal grid may land on a second etch stop layer that is absent from an area around the substrate contact plugs. This structure and process provide lower cost SPADs with mesa structures.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Hybrid solid-state lidar with increased signal dynamic range and control method
ActiveUS12566252B1Optical rangefindersElectromagnetic wave reradiationLaser transmitterSingle-photon avalanche diode
The present disclosure provides a hybrid solid-state lidar with an increased signal dynamic range and a control method. The hybrid solid-state lidar includes: a laser transmitter unit, a laser receiver unit, a transmitting mirror, a receiving mirror, and a rotating polygon mirror, where the laser transmitter unit includes multiple power-and-pulse-width-adjustable vertical cavity surface emitting lasers (VCSELs); the laser receiver unit adopts a single photon avalanche diodes (SPADs) array sensor; and the laser transmitter unit performs at least one emission cycle during a single measurement. By dynamically adjusting emission parameters within a single ranging cycle, the present disclosure expands the signal dynamic range in a time coherent single photon counting (TCSPC) process, enhancing measurement precision of the lidar in both long-and short-range ranging.
Owner:PHOTONAI TECH INC
High over-bias variable load quenching device for single photon avalanche diode
PendingCN121804654AElectric pulse generatorPhotometry electrical circuitsSingle-photon avalanche diodePhoton detection
The invention discloses a high over-bias variable load type quenching device for a single photon avalanche diode, and the device comprises a quenching unit which is used for changing the resistance of a variable load tube to infinity to rapidly cut off the avalanche current when the single photon avalanche diode is avalanche, thereby achieving the variable load type quenching; the reset unit is used for generating a delay-adjustable reset signal after quenching is completed, and controlling the single photon avalanche diode to recover to a to-be-detected state; and the high over-bias supporting unit is used for enabling the two ends of the single photon avalanche diode to obtain over-bias higher than the power supply voltage under the low-voltage process. The quenching and resetting time of the quenching circuit is effectively shortened through a simple circuit structure, and meanwhile, the photon detection probability can be greatly improved through the high over-bias voltage which is nearly twice of the power supply voltage.
Owner:NO 24 RES INST OF CETC
Single photon avalanche diode and preparation method thereof
The single-photon avalanche diode comprises a substrate and an epitaxial layer, the epitaxial layer is arranged on the surface of one side of the substrate, a first well region is formed on the side, away from the substrate, of the epitaxial layer, and a second well region of an annular structure is formed in the first well region; a first heavily doped region is arranged at one end, deviating from the substrate, of the second well region, and covers an inner ring region of the second well region; the distance between the surface of the side, facing the substrate, of the second well region and the contact surface of the first heavily doped region and the second well region is a first distance, the distance between the surface of the side, facing the substrate, of the first well region and the contact surface of the first heavily doped region and the second well region is a second distance, and the first distance is smaller than the second distance. According to the scheme, the problem that it is difficult to balance the low power consumption and the high performance of the single-photon avalanche diode can be solved.
Owner:HANGZHOU HIKVISION DIGITAL TECHNOLOGY CO LTD
Superlattice multiplication layer avalanche diode and preparation method thereof
This invention discloses a superlattice multiplication layer avalanche diode and its fabrication method. The single-photon avalanche diode includes a graphene transparent electrode and, from bottom to top, an InP substrate, an n-type buffer layer, a superlattice absorption region, a p-type charge layer, a superlattice gradient region, a superlattice multiplication region, a p-type contact layer with a p-type contact window, and a passivation layer. The graphene transparent electrode is grown on the passivation layer and the p-type contact window, forming an ohmic contact with the p-type contact region. Magnetic metal nanoparticles that generate a local magnetic field are embedded in the superlattice multiplication region. The magnetic metal nanoparticles are uniformly distributed in-plane within a depth range of 5-400 nm from the interface in the light-gathering direction of the superlattice multiplication region. This invention combines the internal bandgap optimization of the superlattice with the external limiting pump capability of graphene to produce a synergistic effect, providing a single-photon avalanche diode with low dark count rate, weak afterpulse effect, high detection efficiency, and the ability to operate at relatively high temperatures.
Owner:ZHONGSHAN DEHUA CHIP TECH CO LTD
Control circuit and distance measuring system
ActiveUS12477840B2Optical rangefindersPhotometry electrical circuitsSingle-photon avalanche diodeHemt circuits
The control circuit according to the present disclosure includes a passive circuit (10) and an active circuit (20). The passive circuit (10) is configured to: supply current to a Single Photon Avalanche Diode (SPAD) element (6a) from a supply path (Rp); and output a first pulse signal (P1) according to a signal Generated in the SPAD element (6a). The active circuit (20) is configured to: supply current to the SPAD element (6a) selectively from among a plurality of supply paths; and output a second pulse signal (P2) according to a signal generated in the SPAD element (6a).
Owner:SONY SEMICON SOLUTIONS CORP
Multi-mode detection single photon avalanche diode front-end circuit
PendingCN122151038AWave based measurement systemsPhotometry electrical circuitsSingle-photon avalanche diodeLinear control
The application relates to a single photon avalanche diode front-end circuit for multi-mode detection, which integrates a quenching, delay control and self-resetting module composed of basic MOS tubes, inverters and logic gates. Three control signals are output by a controller to configure modes: in a synchronous gating mode, the related MOS tubes are sequentially controlled to be turned on and turned off in a gating mode; in an asynchronous free-running mode, the related control levels are fixed, and the reset delay is linearly controlled by adjusting the third control signal. The application realizes dual-mode detection by using a single circuit structure, shares the core quenching path, has the advantages of small area, low power consumption and wide adjustable range of dead time, and is suitable for large-scale SPAD array integration.
Owner:FUDAN UNIVERSITY
A single photon avalanche diode and a light detection device
This invention discloses a single-photon avalanche diode and a photodetector. The single-photon avalanche diode includes a substrate, a first p-type epitaxial layer, an n-type buried layer, a p-type buried layer, a second p-type epitaxial layer, an anode contact region, and a cathode contact region. The first p-type epitaxial layer is located on one side of the substrate; the n-type buried layer and the p-type buried layer are located on the side of the first p-type epitaxial layer away from the substrate, and the n-type buried layer and the p-type buried layer form an abrupt junction; the second p-type epitaxial layer is located on the side of the p-type buried layer away from the n-type buried layer; the anode contact region is located on the side of the second p-type epitaxial layer away from the p-type buried layer and is coupled to the p-type buried layer; the cathode contact region is located on the side of the n-type buried layer away from the substrate and is coupled to the n-type buried layer. The technical solution of this invention can improve the photodetector capability of the device.
Owner:SHANGHAI SILICON PRINTING TECH CO LTD
Insulation defect detection method based on quantum color center technology
The invention discloses an insulation defect detection method based on a quantum color center technology, and belongs to the field of state monitoring. Comprising the steps that a quantum sensing module and an excitation and signal acquisition module are adopted to detect the insulation defect of the electrical equipment, the quantum sensing module adopts a silicon carbide color center chip, a double-vacancy defect is prepared through an ion implantation and annealing process, a substrate material adopts AlN ceramic, and a protective layer adopts an aerogel composite structure; a DPSS laser is adopted as a light source of a laser excitation chain of an excitation and signal acquisition module, and a single-photon avalanche diode array is adopted as a detector of a fluorescence acquisition chain; a signal processing flow is based on silicon carbide double-vacancy color center fluorescence lifetime attenuation characteristics, partial discharge detection is carried out, dynamic change and frequency spectrum characteristics of a color center fluorescence lifetime tau value are analyzed, a multi-physics field decoupling algorithm combining time domain fluorescence lifetime analysis, frequency domain vibration spectrum extraction and a machine learning classification model is adopted, and a silicon carbide double-vacancy color center fluorescence lifetime tau value is analyzed. And high-precision identification and positioning of discharge types such as corona discharge and creeping discharge are realized.
Owner:STATE GRID SHANGHAI MUNICIPAL ELECTRIC POWER CO +1
A single-photon tof image sensor for lidar
The application discloses a kind of single-photon TOF image sensors for laser radar, including reconfigurable pixel array, dynamic reconfigurable circuit, real-time feedback control system;Reconfigurable pixel array is constructed based on field programmable array FPGA technology, each pixel unit is integrated with configurable single-photon avalanche diode SPAD, amplifier, integrator and control logic circuit, by programming to the internal logic of FPGA, change pixel operating mode and parameter, and pixel unit can be configured as unit with specific function, pixel for edge detection and motion detection, in the application, flexible reconfigurable pixel configuration: with field programmable array FPGA technology, the photosensitive area of pixel unit, integration time and gain and other key parameters can be flexibly adjusted according to actual demand, pixel unit can also be configured as unit with specific function such as edge detection, motion detection.
Owner:BEIJING PURER TECH CO LTD
Depth compensation method of direct time of flight (dTOF) sensor and electronic equipment
PendingCN121693679AElectromagnetic wave reradiationTime of flight sensorSingle-photon avalanche diode
The invention discloses a depth compensation method of a direct time of flight (dTOF) sensor and electronic equipment, and is suitable for the technical field of computer application. The method comprises: in response to a trigger operation on a camera application, driving a dTOF sensor to acquire original image data (201); acquiring a current actual driving voltage of a single photon avalanche diode (SPAD) in the dTOF sensor (202); acquiring a current expected driving voltage of the SPAD (203); and performing depth compensation on the original image data according to the actual driving voltage and the expected driving voltage to generate a target depth map (204). Therefore, the depth information offset caused by the adjustment error of the SPAD driving voltage is corrected through the deviation between the actual value and the theoretical value of the SPAD driving voltage, so that the accuracy of the depth information collected by the dTOF sensor is improved, and the distance measurement precision of the dTOF sensor is improved.
Owner:HONOR DEVICE CO LTD
Range hood and range hood control method and device
PendingCN121655011ADomestic stoves or rangesLighting and heating apparatusLaser transmitterSingle-photon avalanche diode
The invention discloses a range hood and a range hood control method and device, and belongs to the technical field of kitchen appliances. The range hood comprises a gesture detection module and a controller. The gesture detection module comprises a single photon avalanche diode and a laser transmitter; the gesture detection module is used for controlling the laser transmitter to transmit a laser signal to a target direction of the range hood, and receiving a reflected light signal formed by reflecting the laser signal through a hand of a user through a single photon avalanche diode; generating a depth map including the hand of the user according to the time difference between the laser signal and the reflected light signal; sending the depth maps of a plurality of consecutive moments to a controller; the controller is used for recognizing the depth maps at multiple continuous moments through a preset gesture recognition model to obtain a user gesture; and generating a control instruction corresponding to the user gesture to control the running state of the range hood. The non-contact control of the range hood can be realized, and the operation convenience of the range hood is improved.
Owner:GUANGDONG CHENGYI TECH CO LTD
Single-photon avalanche diode (SPAD) sensor, semiconductor structure including SPAD sensor, and method for forming the same
PendingUS20260047214A1Radiation controlled devicesSemiconductor devicesSingle-photon avalanche diodeSemiconductor structure
A semiconductor structure includes a first well in a semiconductor substrate, a plurality of fin-like doped regions over and coupled to the first well in the semiconductor substrate, and a second well over the first well and the plurality of fin-like doped regions in the semiconductor substrate. The first well and the plurality of fin-like doped regions comprise a first conductivity type, and the second well comprises a second conductivity type complementary to the first conductivity type. A first interface is formed between the second well and the first well, a second interface is formed between the second well and the plurality of fin-like doped regions, and each of the first interface and the second interface has a non-planar configuration.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
A key parameter testing system for a fiber type single photon avalanche diode and a method of using the same
This application provides a key parameter testing system and method for fiber-optic single-photon avalanche diodes (SPADs). The system uses a testing module to drive multiple SPADs under test, generates laser trigger signals based on parameter testing requests, and acquires pulse parameters for each SPAD under test under different testing modes with and without light source illumination. A laser generation module generates an initial pulse signal based on the laser trigger signal; a laser adjustment and transmission module adjusts the light attenuation value of the initial pulse laser and separates it into multiple test light sources with equal laser power; a control module monitors the laser power of the laser generation module and configures the laser adjustment parameters of the laser adjustment and transmission module; and the system determines the key parameters of each SPAD under test based on the pulse parameters. The system provided in this application can quickly detect the key parameters of multiple SPADs while ensuring detection accuracy, and the parameter testing process is simple and intuitive.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
Laser radar ranging method and system using single photon avalanche diode
The invention provides a laser radar ranging method and system using a single photon avalanche diode. A laser radar range finding method using a single photon avalanche diode comprises the following steps: generating and emitting a laser pulse sequence, the laser pulse sequence comprising a plurality of pulses, the plurality of pulses having a plurality of time intervals, each time interval being an integral multiple of the resolution of a time-to-digital converter, the sum of all the time intervals is a preset fixed value, so that the duration of a single measurement period is fixed; receiving an echo signal reflected by a target by using a single photon avalanche diode detector, and quantizing the echo signal into a receiving vector by using a time-to-digital converter; and performing cross-correlation operation on the receiving vector and a transmitting vector corresponding to the laser pulse sequence, and calculating a target distance according to a peak value position of a cross-correlation operation result. According to the invention, hardware cost is reduced, and high-efficiency ranging with a stable frame rate is realized at the same time.
Owner:TIANMU (JIASHAN) PHOTOELECTRIC TECH CO LTD
Single photon avalanche diode array, receiving sensor and lidar
The application belongs to the technical field of optical devices, and provides a single-photon avalanche diode array, a receiving sensor and a laser radar. At least two SPAD units are arranged in an array. A microlens converges incident light onto a corresponding SPAD unit. A back metal grid connects the SPAD unit and a corresponding external electrode. A first dielectric layer is arranged between the microlens and the SPAD unit. A second dielectric layer is arranged between the SPAD unit and a front metal trace layer. The front metal trace layer is electrically connected to the corresponding SPAD unit through a contact metal wire. By arranging a deep groove isolation column between adjacent SPAD units and arranging a metal filling structure between the deep groove isolation column and the back metal grid, self-excited photons generated by the SPAD unit excited by incident light can be isolated, the self-excited photons can be prevented from entering adjacent SPAD units through the grid gap, the probability of photon crosstalk can be reduced, and the optical crosstalk of the device can be reduced.
Owner:SUTENG INNOVATION TECHNOLOGY CO LTD
Dual multiplication region configuration for near infrared sensitivity in silicon-based CMOS single photon avalanche diodes
A near infrared sensitivity enhanced non-isolated substrate silicon-based single photon avalanche diode is disclosed, comprising a p-well layer (101), a high voltage n-well (102), the p-well layer and the high voltage n-well layer positioned against each other and configured to form a main junction (100) defining an active region (104), the p-well layer comprising a doping according to a doping concentration profile, the p-well layer is configured to have a first double peak in a doping concentration profile of the p-well layer throughout the active region, the first double peak corresponding to a respective p-type doped region, and the high voltage n-well is configured to have a second double peak corresponding to a respective n-type doped region, the second double peak corresponding to a respective p-type doped region, and the second double peak corresponding to a respective n-type doped region. The n-doped region is configured to achieve an n-p-n-p type device junction distribution, whereby further, the p-well layer is lightly doped and configured to obtain a wide depletion region, i.e., at least 1 [mu] m wide, and the high voltage n-well layer is further configured to extend beyond the p-well layer to form a guard ring (103) around the active region.
Owner:ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
Time-resolved spectrum measurement method and apparatus based on multi-event time-to-digital converter, device, and medium
PCT designated stageWO2026113772A1Raman scatteringColor/spectral properties measurementsSingle-photon avalanche diodeAvalanche diode
The present application relates to a time-resolved spectrum measurement method and apparatus based on a multi-event time-to-digital converter, a device, and a medium. The method comprises: a multi-event time-to-digital converter performs histogram statistics on photon signals, which are responded at different times and correspond to each column of single-photon avalanche diodes, in different laser pulse periods, so as to determine photon signal distributions of a photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes in the different laser pulse periods; and the multi-event time-to-digital converter performs delayed merging on the photon signal distributions in the different laser pulse periods to determine a photon lifetime curve corresponding to the photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes, and integrates the photon lifetime curve corresponding to the photon signal of a specific wavelength corresponding to each column of single-photon avalanche diodes to construct a time-resolved spectrum of a sample to be measured. The present application can reduce the count loss or time error caused by dead time.
Owner:JIHUA LAB
Semiconductor device with optical structure for improving blue light detection
A semiconductor device is disclosed. The semiconductor device includes a plurality of image pixels. Each image pixel includes a semiconductor region and a single-photon avalanche diode formed within the semiconductor region. Each image pixel also includes an optical structure arranged within the semiconductor region and extending from a top surface of the semiconductor region into its interior. Each image pixel further includes a microlens configured to focus light received by the image pixel into the optical structure.
Owner:SEMICON COMPONENTS IND LLC
Single-photon avalanche diode comprising p-doped region and 1-side spot ohmic metal contact
PCT designated stageWO2026079608A1Wave based measurement systemsSingle-photon avalanche diodeAvalanche diode
The present invention relates to a P-doped region and a 1-side spot ohmic metal contact structure which are applicable to a single-photon avalanche diode sensor. It is possible to enhance photon absorption efficiency while minimizing the size of a single-photon avalanche diode, by forming a P-doped region and placing an ohmic metal contact in a spot form on an edge of the P-doped region.
Owner:LG INNOTEK CO LTD
Embedded contact for SPAD applications
Systems, devices, and methods for locating a contact for a single-photon avalanche diode (SPAD) in an isolation trench structure of a SPAD-based imager are described. These systems, devices, and methods can include a front-side isolation trench structure positioned between adjacent SPAD pixels. The trench is lined with a continuous passivation layer that has an opening allowing a conductive material filling the trench to contact the substrate and form a buried contact for one or more adjacent SPADs. The trench can include a stepped trench with the opening in the passivation layer located near the stepped area. Alternatively, the trench can include an opening in the passivation layer facing the bottom of the front-side trench. Finally, the trench can include a back-side trench lined with a high-κ dielectric.The back trench can be continuous or segmented and / or overlapping. Buried SPAD contacts, as described here, can enable a reduction in pixel size.
Owner:SEMICON COMPONENTS IND LLC
Single photon avalanche diode array, receiving sensor and laser radar
The invention belongs to the technical field of optical devices, and provides a single photon avalanche diode array, a receiving sensor and a laser radar, at least two SPAD units are arranged in an array, a microlens converges incident light to the corresponding SPAD unit, a back metal grid connects the SPAD unit and a corresponding external electrode, a first dielectric layer is arranged between the microlens and the SPAD unit, and a second dielectric layer is arranged between the microlens and the SPAD unit. The second dielectric layer is arranged between the SPAD units and the front metal wiring layer, and the front metal wiring layer is electrically connected with the corresponding SPAD units through contact metal wires. The deep groove isolation columns are arranged between the adjacent SPAD units, and the metal filling structures are arranged between the deep groove isolation columns and the back metal grids, so that self-excitation photons generated when the SPAD units are excited by incident light can be isolated, the self-excitation photons are prevented from entering the adjacent SPAD units through grid gaps, the probability of photon crosstalk is reduced, and the optical crosstalk of the device is reduced.
Owner:SUTENG INNOVATION TECHNOLOGY CO LTD