35results about How to "Improve fill factor" patented technology

The invention discloses a synthesis method and application of a non-condensed ring electron acceptor, which are different from a traditional condensed ring structure or a single alkyl chain side chain, and a dichlorobenzene unit is introduced as a conformation regulating group. As chlorine atoms have strong electronegativity and proper atomic radius, remarkable non-covalent interaction such as Cl-S and Cl-pi can be generated among molecules. The interaction is similar to a set of precise molecular guide rails, molecules are guided to perform highly ordered pi-pi accumulation, so that electron cloud overlapping is remarkably enhanced, and an efficient electron transmission channel is constructed. According to the organic solar cell prepared based on the non-condensed ring electron acceptor material designed by the invention, the electron mobility is remarkably improved, and meanwhile, the charge recombination loss of a device is effectively reduced.

The present application provides a kind of monocrystalline silicon cell and its preparation method, including the following steps: texturing on at least one surface of monocrystalline silicon wafer substrate, obtain the monocrystalline silicon wafer with a plurality of continuous pyramid structure of pyramid surface on the at least one surface;At least one pyramid surface of the obtained monocrystalline silicon wafer is doped with diffuser, obtain the monocrystalline silicon wafer with PN junction;Using slurry containing spherical metal particles on the side of the monocrystalline silicon wafer with PN junction with the at least one pyramid surface electrode grid printing and sintering, so that spherical metal particles form ohmic contact with pyramid surface.The present application further includes by laser SE process to enhance the ohmic contact of metal particles and pyramid tip.The present application improves fill factor, reduces open circuit voltage loss, increases battery conversion efficiency;Meet the dual needs of reducing contact area contact resistance and reducing non-contact area carrier recombination, reduce the electrical loss of solar cell.

This invention discloses a TopCon battery and its fabrication method. The method includes: providing an N-type silicon substrate; the N-type silicon substrate includes a front side and a back side; fabricating a first tunneling oxide layer and a first doped layer on the back side; fabricating a second tunneling oxide layer and a second doped layer on the front side; removing the second tunneling oxide layer and the second doped layer from a predetermined texturing area on the front side to expose a portion of the N-type silicon substrate, and texturing the exposed portion of the N-type silicon substrate surface to form a textured structure; screen printing and high-temperature sintering the first doped layer on the back side and the second doped layer on the front side to form a first electrode in contact with the first doped layer on the back side, and a second electrode in contact with the second doped layer on the front side. Using the above method, the contact resistivity between the electrode and the front surface field layer is reduced, the fill factor of the battery is reduced, and thus the conversion efficiency of the battery is improved.

The invention discloses a perovskite solar cell, and relates to the technical field of solar cells. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a transparent conductive layer which are stacked in sequence, wherein the conductive substrate, the hole transport layer, the perovskite light absorption layer, the electron transport layer and the transparent conductive layer are stacked in sequence; wherein an ionic liquid layer is arranged between the hole transport layer and the perovskite layer, the ionic liquid layer comprises ionic liquid, the ionic liquid comprises imidazole cations and anions, the structural formula of the imidazole cations is shown as a formula I, R1 is selected from C4-C10 alkyl, R2 is selected from C4-C10 alkyl, and R3 is selected from C4-C10 alkyl. And anions are selected from any one of bis (trifluoromethanesulfonyl) imine radical, tetrafluoroborate radical, hexafluorophosphate radical and thiocyanate radical, so that the problem of limited performance improvement of the perovskite solar cell caused by energy level mismatching and interface defects between the hole transport layer and the perovskite layer in the prior art is solved.

This invention provides a solar cell, its fabrication process, a tandem solar cell, and a photovoltaic module. The fabrication process of the solar cell includes: providing a cell substrate; printing a conductive material onto the cell substrate; and curing the conductive material to form initial grid lines. The conductive material includes bismuth-based lead-free glass; the conductive material also includes copper powder and nickel powder; the mass ratio of copper powder to nickel powder is 80~99.5:0.5~20, and the copper powder includes flake-shaped copper powder and spherical copper powder. In the fabrication process of this invention, the conductive material, through a ternary synergistic system of "copper-nickel-glass" and a dual-morphology copper powder composite design, achieves multiple effects such as suppressing copper diffusion and oxidation and improving adhesion under an air-sintering atmosphere, thereby improving the fill factor and photoelectric conversion efficiency of the solar cell.

The invention discloses a preparation method of a TBC solar cell. The preparation method comprises the following steps: alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer; carrying out boron diffusion conversion to obtain P-type polycrystalline silicon; laser patterning is prepared for N region deposition; acid pickling and alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer again; carrying out phosphorus diffusion conversion to obtain N-type polycrystalline silicon; removing PSG from the front side; patterning to expose the N-type polycrystalline silicon region; performing alkali texturing treatment to form a pyramid structure, and performing rounding treatment; pickling the back surface and reserving the polycrystalline silicon layer; depositing an aluminum oxide passivation layer and a silicon nitride passivation layer on two sides; laser trepanning is carried out to expose the P-type polycrystalline silicon region and the N-type polycrystalline silicon region; metallizing to form a precise electrode; and performing light injection to obtain the TBC solar cell. According to the TBC solar cell provided by the invention, BSGamp; the PSG is used as a mask, and the laser patterning / corrosion slurry is used for replacing photoetching and other mask materials, so that the compatibility with the existing TOPCON production line is high.

This invention relates to the field of nanomaterial preparation and polycrystalline thin film preparation technology, specifically providing a method for controlling the orientation of polycrystalline thin films using antisolvents. This aims to solve the problems of existing preparation methods, such as cumbersome implementation, incompatibility with industrial production, and potential negative impacts on the integrity of the polycrystalline thin film. To this end, the method for controlling the orientation of polycrystalline thin films using antisolvents includes: coating a pre-prepared precursor solution onto a substrate; coating an antisolvent corresponding to a specific target orientation onto the substrate containing the precursor solution; and subjecting the coated substrate containing the precursor solution and antisolvent to low-temperature annealing to obtain a polycrystalline thin film with the specific target orientation. The annealing time is negatively correlated with the annealing temperature. The polycrystalline thin films prepared by the method of this invention exhibit high orientation consistency, low defect density, high carrier mobility, and a more compact and flat film morphology.

The application relates to the photovoltaic technology field, in particular to a back contact cell, a preparation method thereof, a back contact laminated cell and a photovoltaic module. The back contact cell comprises a substrate and a first passivation structure, and a first surface of the substrate is sequentially provided with a first hydrogenated amorphous silicon oxide layer, a second hydrogenated amorphous silicon oxide layer and a P-type doped layer. The oxygen doping ratio of the first hydrogenated amorphous silicon oxide layer is X1, the oxygen doping ratio of the second hydrogenated amorphous silicon oxide layer is X2, and X1 and X2 satisfy X1>X2. By arranging the laminated structure with the oxygen doping ratio gradient design, the asymmetric carrier transport channel can be formed, the blocking effect on the electrons and the transmission effect on the holes can be improved, the selective transmission of the carriers can be realized, the parasitic absorption at the interface can be reduced, the probability of the repeated absorption of the light by the substrate can be increased, the open-circuit voltage and the short-circuit current of the back contact cell can be improved, and the photoelectric conversion efficiency of the back contact cell can be improved.

The invention relates to the technical field of photovoltaics, in particular to a solar cell and a preparation method thereof, a laminated cell, a photovoltaic module and processing equipment. According to the preparation method provided by the invention, photo-thermal cooperative treatment can be performed on the solar cell in a process window period between printing and sintering of the solar cell so as to activate hydrogen atoms in a film layer of the solar cell and guide the hydrogen atoms to migrate towards the direction of the substrate, so that the hydrogen atoms can be combined with dangling bonds at the substrate to form a passivation structure; according to the method, defects in the solar cell can be repaired in advance, so that hydrogen atoms in a film layer of the solar cell can be locked before the solar cell is sintered, the possibility of excessive escape of the hydrogen atoms during sintering can be reduced, the concentration of the hydrogen atoms in the film layer of the solar cell can be improved, the passivation quality of the solar cell is improved, and the service life of the solar cell is prolonged. Therefore, the photoelectric conversion efficiency, the open-circuit voltage, the short-circuit current and the filling factor of the solar cell are improved, and the overall working performance of the solar cell is improved.

The application provides a perovskite solar cell doped with 3-amino-2-thiophene methyl formate and a preparation method thereof. The amino group, the ester group, the nitrogen atom, the oxygen atom and the sulfur atom on the thiophene in the 3-amino-2-thiophene methyl formate can be coordinated with cation and anion vacancy defects in the perovskite to synergistically passivate defects on the surface and the grain boundary of the perovskite crystal, reduce trap state density, inhibit non-radiative recombination of the perovskite film and prolong carrier lifetime. The introduction of the dopant can promote the growth of a high-quality perovskite film, obtain a perovskite film with better crystallinity and fewer grain boundaries, promote light absorption and carrier transport and improve the photoelectric conversion efficiency of the doped perovskite solar cell. The 3-amino-2-thiophene methyl formate can also improve the hydrophobicity of the perovskite film and the aging resistance of the perovskite film under the conditions of light, heating, water vapor and oxygen, and improve the environmental stability, light stability and thermal stability of the doped perovskite solar cell.

The invention relates to the technical field of power cables, in particular to a middle-high voltage power cable for long-distance high-capacity power transmission and a preparation method of the middle-high voltage power cable for the long-distance high-capacity power transmission. The conductor shielding layer is coated on the outer wall of the layered split conductor; the insulating layer is coated on the outer wall of the conductor shielding layer; the insulating shielding layer is coated on the outer wall of the insulating layer; the buffer layer coats the outer wall of the insulation shielding layer; and the armor layer coats the outer wall of the buffer layer. The layered split conductor structure breaks through the process limitation of the number of traditional split conductor strand blocks, the composite insulation structure layer is composed of the micro-arc oxidation insulation separation layer and the composite elastic insulation rope, the ultra-thin and tough ceramic coating replaces crepe paper, the filling coefficient and the insulation reliability are improved, and through the filling buffering effect of the elastic rope, the insulation performance of the conductor is improved. And the integrity of the insulating coating under a harsh process is protected.

The invention relates to the technical field of oil well pumps, in particular to a plunger type oil well pump for oil field exploitation. Comprising a pump cylinder, a fixed valve seat is detachably connected to the lower end of the pump cylinder, a fixed valve is placed in the fixed valve seat, a traveling valve seat is slidably connected to the interior of the pump cylinder in a sealed mode, a traveling valve is placed in the traveling valve seat, an installation cylinder is slidably connected to the interior of the traveling valve seat, and a lower positioning frame is fixedly connected to the inner side of the installation cylinder; the lower positioning frame makes contact with the lower portion of the traveling valve, and the mounting cylinder drives the traveling valve to move through the lower positioning frame. The installation cylinder actively controls the traveling valve to move and controls the traveling valve to actively relieve blocking of the traveling valve seat in the down-stroke period, so that when crude oil containing natural gas is extracted, the pressure difference needed by opening of the traveling valve seat is reduced, the invalid stroke generated due to gas compression is shortened, the effective liquid drainage stroke length of the plunger is prolonged, and the safety performance of the plunger is improved. And the fullness coefficient and the oil pumping efficiency of the pump are improved.

The application discloses a hole transport layer doped with a glycine derivative and a preparation and application method thereof. The amino group (-NH2) in the glycine salt can interact with the polar group of Me-4PACz, helping the dispersion of Me-4PACz in a solution and on a nickel oxide surface. The benzene ring contained on the selected derivative can help the electron conduction of the hole transport layer, and the halogen substituent group can change the work function of the hole transport layer, form a highest occupied molecular orbital (HOMO) energy level matched with a wide-bandgap perovskite, reduce the non-radiative recombination of a hole transport layer / perovskite interface, improve the stability of a lower interface of a perovskite active layer, and significantly improve the efficiency and stability of a wide-bandgap perovskite solar cell prepared by applying the hole transport layer material.

The application discloses a kind of hole transport layer for improving hole extraction efficiency by π conjugated extension and inhibiting excessive aggregation and preparation method and perovskite solar cell, it is related to photoelectric functional material and perovskite solar cell technical field.The hole transport layer includes hole extraction material, the molecular structure of hole extraction material is mainly with π conjugated hole transport skeleton, and introduce the π conjugated extension fragment capable of expanding π electron delocalization range and the structural unit capable of reducing excessive molecular aggregation on the main body.The hole transport layer prepared by the application can improve the bottom interface contact, reduce the interface non-radiative recombination, improve the hole extraction efficiency, and further improve the open-circuit voltage, fill factor, photoelectric conversion efficiency and working stability of perovskite solar cell, and has good preparation repeatability.

The application provides a printable mesoscopic perovskite solar cell and a preparation method thereof, and the solar cell has a layered structure framework. By adding an alcohol ether to a precursor solution, the permeability of the precursor solution is effectively improved, and the fill factor, short-circuit current and stability of the solar cell are significantly improved, so that the technical problem that the existing perovskite precursor is not filled sufficiently in the porous membrane framework, resulting in poor photoelectric performance, is solved.

The application provides a heterojunction solar cell and a manufacturing method thereof. The cell comprises: an N-type substrate having oppositely arranged front and back surfaces; a front cell structure on the front surface of the N-type substrate, comprising an intrinsic amorphous silicon passivation layer and an N-type doped layer; a back cell structure on the back surface of the N-type substrate, comprising an intrinsic amorphous silicon passivation layer and a P-type doped layer; a front conductive layer covering the front cell structure; and a back conductive layer covering the back cell structure; wherein the front conductive layer is a transparent conductive layer; and the back conductive layer is a composite structure reflective conductive layer, comprising: an indium-free conductive layer in direct contact with the P-type doped layer, a metal reflective layer sputtered on the indium-free conductive layer, and a dense protective layer sputtered on the metal reflective layer, the dense protective layer and the metal reflective layer being metal thin film layers of different substrates. The application reduces the cost of the cell, and improves the electrical performance and stability of the cell.

The application discloses a perovskite solar cell containing a double-layer trifluoroacetate modification layer and a preparation method thereof. The perovskite solar cell comprises, from bottom to top, a conductive glass, an electron transport layer, an electron transport layer modification layer, a perovskite layer, a perovskite modification layer, a hole transport layer and an electrode; the electron transport layer modification layer and the perovskite modification layer are one of methylamine trifluoroacetate, formamidine trifluoroacetate, dimethylamine trifluoroacetate, ethylamidine trifluoroacetate, ethylenediamine trifluoroacetate and guanidine trifluoroacetate. The application simultaneously fills and modifies defects of the electron transport layer and the perovskite layer, passivates oxygen defects in the tin oxide and ion vacancies in the perovskite layer through hydrogen bonds and chemical interactions, and solves the problems of the perovskite solar cell, such as many defects in the electron transport layer and the perovskite layer, low efficiency and poor stability.

The application provides a preparation method of an IBC battery assembly, and relates to the technical field of photovoltaic assemblies. The preparation method of the IBC battery assembly comprises a printing process of an IBC battery piece, and the printing process comprises the following steps: printing a tin paste part on a pad point of the battery piece; the tin paste part comprises a first tin paste part and a second tin paste part, the first tin paste part and the second tin paste part are arranged at intervals, the width of a tin paste gap formed between the first tin paste part and the second tin paste part is small in the middle and large at both ends, and the tin paste gap is arranged to extend along the arrangement direction of the pad point. The application can increase the contact area of the solder strip pressed on the pad point, improve the tin rate of the tin paste, ensure the welding yield, completely release the performance of the IBC battery piece through the solder strip, and improve the fill factor of the solar photovoltaic assembly.

The application provides a perovskite thin film and a preparation process thereof and a perovskite solar cell, and belongs to the technical field of solar cells.The perovskite thin film comprises the following preparation steps: mixing, stirring, heating and ultrasonicating MXene powder, anhydrous dichloromethane and succinyl chloride, filtering and washing, mixing with anhydrous ethanol and performing suction filtration, and heating and drying to obtain a composite mesh; mixing, stirring, ultrasonicating and filtering 1-allyl-3-methyl imidazole iodide, 2-hydroxy-2-methyl-1-phenyl-1-propanone and anhydrous acetonitrile to obtain a buffer; laying the first piece of composite mesh on a substrate, performing hot pressing treatment, dropping the buffer and performing spin coating, irradiating with ultraviolet light, dropping a precursor solution and performing spin coating, laying the second piece of composite mesh, dropping ethyl acetate and performing spin coating, adjusting humidity, and heating and annealing to obtain the perovskite thin film.The perovskite thin film prepared by the application can improve the open-circuit voltage, the fill factor and the photoelectric conversion efficiency of the perovskite solar cell.

The application provides a boron diffusion preparation method, which comprises the following steps: (1) after the texturing of a silicon wafer, the silicon wafer is subjected to surface oxidation in a diffusion device by introducing O2; then small N2 carrying a boron source is introduced into the diffusion device to react with O2, and large N2 is introduced to transport the boron source and O2 to the surface of the silicon wafer, so that BSG pre-deposition is carried out on the surface of the silicon wafer; after the completion, the flow rates of O2, small N2 and large N2 are adjusted, and BSG deposition and promotion are continuously carried out on the surface of the silicon wafer; after the completion, the silicon wafer in the diffusion device is purged; (2) the silicon wafer after the completion of the purging is transferred to a chain oxidation device to perform rapid heat treatment under a protective atmosphere, and boron diffusion is completed after the removal of the back BSG layer; the method rapidly completes BSG deposition and short-time pre-promotion in a tube diffusion device, and further completes the promotion by means of a rapid heat treatment device, so that the uniformity of the silicon wafer is ensured, the boron diffusion preparation time is greatly saved, and the production efficiency is improved.

The utility model provides a kind of stacked grid laser secondary injection repair equipment, comprising: conveyor belt;Feeding assembly, feeding assembly includes first feeding mechanism and second feeding mechanism in power-off state available;First double laser assembly;Second double laser assembly;Carrying assembly;Rotary table;Feeding assembly, rotary table, discharging assembly are sequentially arranged, and carrying assembly is located in the side of rotary table, to realize the position switching of product between conveyor belt and rotary table.The utility model can be applicable to different sizes of battery piece, and the action contact time of laser and battery piece is increased by four times positioning of different sizes of battery piece by laser, and ohmic contact is better, current is increased, silver silicon microcrystalline is promoted to form, junction is fully fired, and the filling factor of battery piece is improved.

The application discloses a method for manufacturing photovoltaic BC cells by using inkjet printing hot melt ink, which comprises the following steps: step 1, silicon wafer pretreatment; step 2, hot melt ink preparation; step 3, inkjet printing equipment debugging; step 4, P area mask manufacturing; step 5, etching back process for manufacturing P area; step 6, removing P area mask; step 7, N area mask manufacturing; step 8, etching back process for manufacturing N area; step 9, high-temperature activation and doping optimization; and step 10, subsequent processing. The method can overcome the problems of complex process, high cost and poor mask stability in the prior art, and achieve the goals of simplifying the process, reducing the cost, improving the cell performance and production efficiency.

The embodiment of the present application relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module, the solar cell comprising: a substrate; a tunneling dielectric layer located on a first surface of the substrate; a plurality of doped conductive layers located on a surface of the tunneling dielectric layer away from the substrate, and the plurality of doped conductive layers are arranged at intervals; a plurality of first electrodes arranged at intervals, the first electrodes extend along a first direction, the first electrodes are arranged on a side of the doped conductive layers away from the substrate, and the first electrodes are electrically connected with the doped conductive layers; and at least one conductive transfer layer located between adjacent doped conductive layers and in contact with side surfaces of the doped conductive layers. The embodiment of the present application is conducive to improving the photoelectric conversion efficiency of the solar cell.

The application discloses an image sensor and a manufacturing method thereof, and belongs to the technical field of semiconductors. The image sensor comprises a substrate, a photoelectric sensing area and a logic area, the substrate comprises a front surface and a back surface arranged oppositely, a plurality of photodiodes are arranged at the photoelectric sensing area at intervals from the front surface of the substrate, a plurality of semiconductor devices are arranged at the logic area at intervals from the front surface of the substrate, at least one back surface transistor is arranged at the logic area from the back surface of the substrate, the back surface transistor comprises a pair of doped areas arranged at intervals in the substrate, a plurality of deep trench isolation structures are arranged at least on both sides of the photodiodes and the back surface transistor from the back surface of the substrate, and a plurality of metal grids are arranged at least on the deep trench isolation structures on both sides of the photodiodes and on the substrate between the pair of doped areas. The image sensor and the manufacturing method thereof provided by the application meet the requirement of high complexity of the logic area circuit, improve the flexibility of chip design, and reduce the occupied area of the logic area.

The utility model relates to a kind of storage tank and its automatic spading device.The automatic spading device includes: push plate assembly, it includes fixed part and push plate, at least two push plates are spaced apart along the length direction of the fixed part;Drive assembly, it includes guide rail, sliding member and driving part, sliding member is slidably connected with the guide rail, and is connected with the fixed part;The driving part is drivingly connected with the sliding member, to drive the sliding member moves along the guide rail.The utility model moves by cylinder drive push plate assembly, replaces artificial spading, improves loading efficiency and reduces manpower cost and labor intensity;At the same time, by setting multiple push plates, it is realized to increase the pushing area of push plate assembly when slider moves the same distance, to increase the single pushing capacity and pushing distance of push plate assembly, to further facilitate shorten loading time and improve tank fullness coefficient.In addition, automated operation reduces artificial contact, reduces biological safety risk, reduces additional disinfection demand brought by artificial operation, reduces operating cost.

The invention provides a back contact cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of solar cells, and the preparation method of the back contact cell comprises the following steps: carrying out electrochemical anodic oxidation treatment on a silicon substrate after laser film opening, and then preparing a metal electrode to obtain the back contact cell. According to the invention, an electrochemical anodic oxidation process is adopted to preferentially act on a high-activity damaged region caused by laser, the influence on a complete crystalline silicon region is extremely small, meanwhile, the defect density causing carrier recombination is reduced, the minority carrier lifetime in the cell is prolonged, an ideal and low-damage contact interface is provided for subsequent selective electroplating, and the performance of the cell is improved. And the filling factor of the BC battery can be improved.

The application relates to a perovskite laminated solar cell. The perovskite laminated solar cell comprises a crystalline silicon cell and at least one perovskite cell, each perovskite cell comprising a first transparent electrode, a buffer layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer and conductive glass which are sequentially arranged from top to bottom; each perovskite cell further comprises at least one metal grid line which extends on the first transparent electrode in the horizontal direction; the crystalline silicon cell comprises at least one metal main grid which is arranged at the top and / or bottom of the crystalline silicon cell and extends in the horizontal direction; the metal grid line and the metal main grid have the same extending direction; the number of the at least one metal grid line is the same as that of the at least one metal main grid, and the at least one metal grid line is arranged above the at least one metal main grid one by one. The perovskite laminated solar cell improves the light energy conversion efficiency of the four-terminal laminated cell.

This invention discloses a TOPCon battery and its fabrication method, belonging to the field of TOPCon battery technology. It includes a monocrystalline silicon wafer with a tunneling layer, a doped polycrystalline silicon layer, a back anti-reflection layer, and a back metal electrode sequentially disposed on its back side from the inside out. The doped polycrystalline silicon layer includes a first doped polycrystalline silicon region and a second doped polycrystalline silicon region. The first doped polycrystalline silicon region is in contact with the back metal electrode and is disposed on the surface of a groove. The tunneling oxide layer is relatively thin, and the inward junction depth is greater than that of the second doped polycrystalline silicon region. This effectively prevents electrode metal from penetrating into the junction region, reduces metal recombination current, and improves the battery's open-circuit voltage. Furthermore, the first doped polycrystalline silicon region has a larger contact area with the printing paste, reducing the battery's contact resistance. Simultaneously, the groove prevents the printing paste from widening outward, ensuring a high grid line aspect ratio, reducing grid line resistance, and thus improving the battery's fill factor.

This application relates to the field of photovoltaic technology, specifically a solar cell and its fabrication method, a tandem solar cell, a photovoltaic module, and processing equipment. The fabrication method provided in this application utilizes the process window between printing and sintering the solar cell to perform photothermal synergistic treatment, activating hydrogen atoms in the solar cell film and guiding them to migrate towards the substrate. This allows them to combine with dangling bonds at the substrate to form a passivation structure, thus achieving early repair of internal defects in the solar cell. This locks hydrogen atoms in the film before sintering, reducing the possibility of excessive hydrogen atom escape during sintering. This improves the hydrogen atom concentration in the solar cell film, enhances the passivation quality, and improves the photoelectric conversion efficiency, open-circuit voltage, short-circuit current, and fill factor of the solar cell, thereby improving the overall performance of the solar cell.

The application discloses a multifunctional additive modified inverted perovskite solar cell. The structure of the cell is composed of a bottom electrode, a hole transport layer, a modification layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a counter electrode from top to bottom. The modification layer is made of one or two of PEAI, Cl-PEAI and F-PEAI. The perovskite light absorption layer is a perovskite containing 2-hydrazinobenzothiazole modification, and the doping amount of 2-hydrazinobenzothiazole in the perovskite active layer is 0.01-10wt%. The application effectively improves the photoelectric conversion efficiency of the perovskite solar cell, exhibits excellent photoelectric conversion performance, and has a wide and good application prospect.