129results about How to "Improve fill factor" patented technology

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The invention aims to solve the problem that the cell performance is influenced by non-uniform coverage of the perovskite layer on the hole transport layer. For the purpose, the preparation method of the perovskite solar cell comprises the steps of preparing a hole transport layer on a substrate, preparing an interface modification layer on the hole transport layer, preparing a perovskite layer on the interface modification layer, and sequentially preparing an electron transport layer and an electrode on the perovskite layer to obtain the perovskite cell, the wettability of the hole transport layer can be improved by introducing 3-hydroxyphenylboronic acid into the adjacent interface of the perovskite layer and the hole transport layer, so that the coverage rate of the perovskite layer is increased, meanwhile, the 3-hydroxyphenylboronic acid is coordinated with metal ions in the perovskite layer, non-radiative recombination between the hole transport layer and the perovskite layer interface can be reduced, and the hole transport efficiency is improved. And the carrier transmission efficiency is improved.

The invention discloses a passivation contact cell with a selective polysilicon layer and a method of making the same. According to the invention, each laser scanning line on the back surface of the TOPCon solar cell adopts a separation form and is separated by the phosphorus heavily-doped polycrystalline silicon layer, so that overlapping of laser scanning paths does not exist, and a part of the phosphorus-doped polycrystalline silicon layer structure in the surrounding area of the main grid is reserved; according to the structure mode, the transmission distance of carriers in a laser ablation area can be reduced, the carriers can be collected by the fine grid more quickly, and the filling factor FF of the cell is improved especially under the special conditions of grid breakage and the like. According to the invention, the laser grooving area is 40%-80% of the total area of the back of the cell, which is beneficial for balancing the passivation performance of the cell while reducing the parasitic absorption of the polycrystalline silicon to light. The passivation contact cell has high short-circuit current, open-circuit voltage and fill factor.

The invention discloses a preparation method of high-efficiency fusible polytetrafluoroethylene (PFA), and relates to the technical field of fluorine-containing polymers. The preparation method comprises the following specific steps: adding high-purity water into a polymerization kettle, starting stirring, adding a surfactant, a dispersing aid, a chain transfer agent and a perfluoroalkyl vinyl ether monomer, controlling the temperature and pressure of the polymerization kettle, adding an initiator solution into the reaction kettle, and initiating a copolymerization reaction; the preparation method comprises the following steps: continuously adding a gas mixture of tetrafluoroethylene and perfluoroalkyl vinyl ether into a polymerization kettle after a polymerization reaction is started, continuously adding an initiator solution into a reaction kettle at a constant speed at the same time, and recovering unreacted monomers in the polymerization kettle after the reaction is finished to obtain a fusible polytetrafluoroethylene (PFA) resin emulsion. The method overcomes the problem of low polymerization efficiency caused by low filling coefficient and long solvent recovery period of the original solvent phase PFA polymerization reaction, and improves the utilization rate of raw materials.

The invention relates to the technical field of perovskite solar cell preparation, in particular to a bulk phase passivation perovskite light absorption layer, a solar cell and a preparation method, the bulk phase passivation perovskite light absorption layer is prepared by adopting a perovskite layer prefabricated liquid, the perovskite layer prefabricated liquid comprises (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 and m-F-PEACl, the molar concentration ratio of the (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 to the m-F-PEACl is 1.5: (0.1-1), m-F-PEACl and (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 are matched to form a bulk phase passivated perovskite layer, so that organic cations in the m-F-PEACl interact with uncoordinated lead ions or other defect sites in the (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 to form a stable complex or compound, the defect concentration in perovskite is reduced, comprehensive and effective passivation is realized, and the performance of the perovskite is improved. Therefore, the photoelectric property and the stability of the perovskite material are improved. The problem that comprehensive and effective passivation cannot be achieved through a perovskite thin film passivation method in the prior art is solved.

The invention belongs to the technical field of chemical synthesis, and relates to a black-phase formamidine lead iodide microcrystal as well as a preparation method and application thereof. The invention provides a preparation method of black-phase formamidine lead iodide microcrystals. The preparation method comprises the following steps: mixing a salt compound containing divalent lead, hydriodic acid, formamidine acetate, a reducing acid compound for inhibiting oxidation of iodine anions and deionized water as precursor liquid; and performing high-pressure hydrothermal treatment on the precursor liquid to obtain the black-phase formamidine lead iodide microcrystal. According to the preparation method provided by the invention, water is adopted as a solvent, so that the use of an organic solvent is avoided, and the prepared black-phase formamidine lead iodide microcrystal has high crystallinity and stability and can be stored in a room-temperature air condition for a long time without phase change.

The invention relates to a perovskite crystal composite material, a solar cell, a laminated cell and a photovoltaic module. The perovskite crystal composite material comprises a perovskite precursor and an organic additive, the organic additive has a structure as shown in a general formula (I), wherein R1 independently comprises one of-H and substituted or unsubstituted C1-C6 alkyl when appearing every time; and R2 comprises one of a substituted or unsubstituted C1-C6 alkylene group and a substituted or unsubstituted C1-C6 alkyleneoxy group. The perovskite solar cell prepared by using the perovskite crystal combination material provided by the invention has excellent long-term stability while realizing high photoelectric conversion efficiency. # imgabs0 # (I).

The invention discloses a TBC battery with a locally doped back surface and a preparation method of the TBC battery, and belongs to the field of TBC batteries. Wherein a P + + heavily-doped polycrystalline silicon layer and a P + lightly-doped polycrystalline silicon layer are arranged in the P + region or an N + + heavily-doped polycrystalline silicon layer and an N + lightly-doped polycrystalline silicon layer are arranged in the N + region to form a heavily-doped region and a lightly-doped region, so that the photoelectric conversion efficiency of the TBC battery can be effectively improved, the process is relatively simple, the cost increase is less, and the control difficulty is low.

The invention relates to the field of solar cells, in particular to a preparation method of an electron transport layer and a perovskite solar cell, and the preparation method of the electron transport layer comprises the following steps: uniformly mixing stannous chloride dehydrate, an organic ligand / heterogeneous growth connecting agent and a hydrolysis rate control agent in deionized water to obtain a stannic oxide precursor solution; and taking conductive glass as a substrate to be soaked in the tin dioxide precursor solution, performing in-situ growth in a closed environment with the temperature lower than the water evaporation temperature, and then performing ultrasonic cleaning and annealing to obtain the electron transport layer. According to the in-situ chemical growth regulation and control strategy provided by the invention, the bulk phase self-doping defect control of the tin dioxide n-type thin film, the controllable regulation of the energy band and the optimization of the conductivity and the carrier extraction behavior are realized, and the strategy can be used for preparing a series of tin dioxide electron transport layers to adapt to a preparation scheme and application of a perovskite active layer with any component. And the minimization of energy loss and the optimization of interface non-radiative recombination and carrier transport behavior are realized.

The invention relates to the technical field of TOPCon solar cells, in particular to a TOPCon photovoltaic cell structure and a preparation method thereof, and the method comprises the steps: preparing a local patterning mask on a tunneling oxide layer through nanometer imprinting; and etching by using a high-selectivity etching agent and depositing a passivation layer, forming a local passivation structure on the polycrystalline silicon substrate, removing a mask material, depositing a polycrystalline silicon emitter layer and preparing an electrode, and forming a TOPCon photovoltaic cell structure. According to the invention, the local patterning mask is prepared on the tunneling oxide layer by using the nano imprinting technology, the high-selectivity etching solution is combined to form the local patterning structure, and finally the passivation layer material is deposited in the etched area to form the local patterning passivation layer, so that the contact interface is optimized, the recombination current between the front electrode and the silicon substrate is reduced, and the performance of the device is improved. Therefore, the open-circuit voltage and the filling factor of the cell are improved, and the photoelectric conversion efficiency is improved.

The invention relates to a method for optimizing the quality of a perovskite layer through atmosphere annealing, and belongs to the technical field of perovskite layer quality optimization, and the method comprises the steps: preparing precursor materials: taking methylamine hydrochloride, cesium iodide, formamidine iodide and lead iodide as perovskite precursor materials; the preparation method comprises the following steps: preparing a solvent: mixing N-methyl pyrrolidone with dimethylformamide; solution preparation: mixing the precursor material with a solvent to prepare a precursor solution; stirring and filtering the solution; preparing a substrate: sputtering NiO serving as a hole transport layer material on the glass substrate; blade coating of a perovskite precursor solution: uniformly blade coating the precursor solution on the glass substrate coated with the NiO film; preliminary drying; vacuum annealing preparation: placing the glass substrate coated with the perovskite precursor film in a vacuum cavity; nitrogen atmosphere filling: filling high-purity nitrogen; in the nitrogen atmosphere, the temperature in the cavity is increased to a certain temperature range, annealing is conducted at the temperature, and the optimized annealing temperature and time are selected; and cooling and packaging.

The invention discloses a method for preparing a tin-based perovskite solar cell through a double-stage reduction strategy. The method comprises the following steps that S1, a hole transport layer is prepared on an anode substrate; s2, stannous fluoride, formamidine hydriodate, p-fluorophenethyl ammonium bromide, stannous iodide and thiosulfate are dissolved in an organic solvent for a reaction, a perovskite solution is obtained, the hole transport layer is coated with the perovskite solution, and a perovskite layer is obtained; s3, preparing an electron transport layer on the perovskite layer; and S4, sequentially preparing a hole barrier layer and a cathode electrode on the electron transport layer to obtain the tin-based perovskite solar cell. According to the method, the decomposition rate of the perovskite thin film under air and illumination is reduced, sustainable dynamic reduction is achieved by taking thiosulfate as an additive, and the storage stability and the operation stability of the tin-based perovskite solar cell are greatly improved through the dynamic sustainable behavior.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a bottom cell, a composite layer and a top cell, the composite layer is located between the bottom cell and the top cell, the light receiving surface of the bottom cell is provided with an N-type doped layer, and the backlight surface of the top cell is provided with a hole transport layer. The composite layer comprises a first composite sub-layer and a second composite sub-layer which are arranged in a laminated manner, one surface, deviating from the second composite sub-layer, of the first composite sub-layer faces the N-type doped layer, and one surface, deviating from the first composite sub-layer, of the second composite sub-layer faces the hole transport layer; the carrier concentration of the first composite sub-layer is greater than that of the second composite sub-layer; and the resistivity of the first composite sub-layer and / or the resistivity of the second composite sub-layer is 6.5 * 10 <-4 > omega.cm to 1.6 * 10 <-2 > omega.cm, so that the open-circuit voltage and the filling factor of the solar cell are improved, and the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of organic semiconductor photoelectricity, and discloses a triphenylamine dicarboxyl-containing self-assembly hole transport material, a synthesis method and application of the triphenylamine dicarboxyl-containing self-assembly hole transport material as a photoelectric device. The triphenylamine dicarboxyl group is used as an anchoring group, and a bridging unit and a hole transport unit are introduced into a molecular structure through a self-assembly monomolecular layer strategy, so that the hole transport material containing the triphenylamine dicarboxyl group is obtained; the technical problems of poor stability, poor device performance and the like of small organic molecules with anchoring groups in the prior art can be solved. The triphenylamine dicarboxyl group is introduced into the hole transport material, so that the efficiency of a photoelectric device can be improved, the service life of the photoelectric device can be prolonged, and the hole transport material comprises a perovskite solar cell, a perovskite light-emitting diode, a quantum dot light-emitting diode and the like.

The invention provides a crystalline silicon solar cell with high conversion efficiency and a preparation process thereof, and belongs to the technical field of solar cell preparation. The preparation process comprises the following steps: pretreating a crystal silicon wafer; preparing a bionic micro-nano composite film; preparing a composite structure on the surface of the silicon wafer; preparing the glass powder doped with the phosphorus-doped graphene; preparing a positive electrode conductive slurry; and preparing the crystalline silicon solar cell. The CuS nanocrystals / quantum dots are deposited on the surface of the bionic micro-nano composite film, the effects of antireflection, passivation and sensitization of the silicon wafer can be achieved, the photoelectric conversion efficiency of the battery is further improved, the CuS nanocrystals / quantum dots are deposited, the absorption range of the silicon wafer to the optical wavelength can be increased, and the photoelectric conversion efficiency of the battery is improved. Meanwhile, one absorbed photon can be converted into a plurality of photon-generated carriers through the CuS quantum effect, and the photoelectric conversion efficiency of the cell is improved.

The invention discloses a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: arranging a function adjusting layer on and / or in a passivation dielectric layer; electrode slurry is printed on the passivation dielectric layer and corresponds to the position of the function adjusting layer; sintering to form a metal electrode; the function adjusting layer comprises at least one of compounds containing specific cations, the compounds containing the specific cations can release the specific cations at the sintering temperature, and the specific cations are cations corresponding to elements involved in the glass network formation. According to the preparation method, minority carrier recombination can be effectively reduced, the passivation effect of the battery is improved, and the conductivity of the metal electrode is effectively improved.

The utility model provides a laser-assisted sintering device for solar cells. The laser-assisted sintering device comprises a sintering furnace, the laser assembly is located at the downstream of the sintering furnace and used for emitting laser for radiating the battery piece, and the sintering furnace and the laser assembly are arranged in a spaced mode in the first direction; and the transmission assembly is used for transmitting the pre-sintered battery piece in the sintering furnace and enabling the battery piece to pass through the laser radiation area. According to the utility model, laser-assisted sintering is added behind a traditional sintering furnace, and the surface of the cell is scanned by laser, so that the grid lines on the front and back surfaces of the cell can form good ohmic contact, the tunneling oxide layer and the doped polycrystalline silicon layer are ensured to have good passivation capability, the open-circuit voltage and fill factor of the cell are improved, and the performance of the cell is improved. And the photoelectric conversion efficiency of the cell is improved.

The invention provides a defluorination method and a film deposition method for recovering the first round efficiency of a graphite boat. The defluorination method comprises plasma bombardment defluorination and / or high-temperature nitrogen purging defluorination. According to the defluorination method, washing and drying are not needed, efficient defluorination is achieved, meanwhile, the time cost is reduced, use of special gas is reduced, the production cost is saved, and large-scale application and popularization are facilitated.

The invention provides a circulating low-pressure defluorination method for recovering the efficiency of a first round of a graphite boat, which comprises the following steps: introducing inert gas into a cavity to purge the surface of the graphite boat, vacuumizing and maintaining the pressure, introducing the inert gas again to purge, circulating for at least two rounds, and discharging from the boat. According to the circulating low-pressure defluorination method, washing and drying are not needed, efficient defluorination is achieved, meanwhile, the time cost is reduced, use of special gas is reduced, the production cost is saved, and large-scale application and popularization are facilitated.

The invention relates to the technical field of solar cells, particularly provides a preparation method of a TOPcon cell, and aims to solve the problem that a filling factor is difficult to maintain or increase while an open-circuit voltage is increased by an existing preparation method of the TOPcon cell. In order to achieve the purpose, the preparation method of the TOPcon battery comprises the steps that a battery base is provided and comprises a substrate, a doping layer, a passivation layer and a first anti-reflection layer, and the doping layer, the passivation layer and the first anti-reflection layer are sequentially formed on the first side of the substrate; forming a first groove, wherein the first groove extends into the first anti-reflection layer or the passivation layer from the surface of the first anti-reflection layer; printing metal slurry in the first groove; the metal slurry is heated and sintered, heating sintering is adopted, and the slurry penetrates through the passivation layer and then forms ohmic contact with the doping layer. In addition, under the condition that the sintering temperature is reduced, the metal slurry in the first groove can corrode the residual passivation layer, so that good ohmic contact is formed between the metal slurry and the doping layer, and the filling factor of the battery is kept.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: firstly, providing an initial wafer; processing the initial wafer by adopting a laser process to obtain a substrate layer of which the first surface is provided with a plurality of groove regions and non-groove regions; a first tunneling dielectric layer is formed on the first surface, and the thickness of the first tunneling dielectric layer located in the groove area is larger than that of the first tunneling dielectric layer located in the non-groove area; then, an amorphous silicon layer is formed on the side, away from the substrate layer, of the first tunneling dielectric layer, and the thickness of the amorphous silicon layer located in the groove area is larger than that of the amorphous silicon layer located in the non-groove area; carrying out doping treatment on the amorphous silicon layer to obtain a doped layer; and finally, forming a first electrode on a part of the surface of the groove region. The preparation method of the solar cell can improve the performance of the solar cell.

The invention discloses a synthesis method and application of a non-condensed ring electron acceptor, which are different from a traditional condensed ring structure or a single alkyl chain side chain, and a dichlorobenzene unit is introduced as a conformation regulating group. As chlorine atoms have strong electronegativity and proper atomic radius, remarkable non-covalent interaction such as Cl-S and Cl-pi can be generated among molecules. The interaction is similar to a set of precise molecular guide rails, molecules are guided to perform highly ordered pi-pi accumulation, so that electron cloud overlapping is remarkably enhanced, and an efficient electron transmission channel is constructed. According to the organic solar cell prepared based on the non-condensed ring electron acceptor material designed by the invention, the electron mobility is remarkably improved, and meanwhile, the charge recombination loss of a device is effectively reduced.

The present application provides a kind of monocrystalline silicon cell and its preparation method, including the following steps: texturing on at least one surface of monocrystalline silicon wafer substrate, obtain the monocrystalline silicon wafer with a plurality of continuous pyramid structure of pyramid surface on the at least one surface;At least one pyramid surface of the obtained monocrystalline silicon wafer is doped with diffuser, obtain the monocrystalline silicon wafer with PN junction;Using slurry containing spherical metal particles on the side of the monocrystalline silicon wafer with PN junction with the at least one pyramid surface electrode grid printing and sintering, so that spherical metal particles form ohmic contact with pyramid surface.The present application further includes by laser SE process to enhance the ohmic contact of metal particles and pyramid tip.The present application improves fill factor, reduces open circuit voltage loss, increases battery conversion efficiency;Meet the dual needs of reducing contact area contact resistance and reducing non-contact area carrier recombination, reduce the electrical loss of solar cell.

The invention belongs to the field of solar cell materials and technologies, and particularly relates to a preparation method of a silane surfactant, a passivation modification layer and a perovskite solar cell. 3-aminopropyltriethoxysilane or 3-aminopropyltrimethoxysilane is adopted to modify and improve the interface and internal structure of the perovskite solar cell, moisture in air reacts with silane and is hydrolyzed to form a Si-O-Si conductive network, carrier transport is promoted, uncoordinated lead ions and iodine vacancies of perovskite are passivated, internal defects of a thin film are reduced, and the performance of the thin film is improved. The water erosion is reduced, and the purpose of improving the device performance is achieved. The maximum efficiency of the prepared inorganic CsPbI3 perovskite solar cell can reach 20.50%.

The invention belongs to the photovoltaic field, and particularly relates to a perovskite precursor solution, a perovskite thin film, a perovskite solar cell and a preparation method. The perovskite precursor solution comprises a perovskite structure substance raw material, an organic additive and a solvent, the chemical formula of the organic additive is shown as a formula I; in the formula I, R1 is amino or acetamido, R2 is chlorine atom, and R3 is hydrogen atom, amino, acetamido, chlorine atom or hydroxyl. The chlorine atom, the pyridine ring and the acetamido (or amino) in the organic additive have a synergistic effect, so that the problems of uneven nucleation and multiple crystal defects of the perovskite thin film are solved, and the photovoltaic performance of the perovskite solar cell is further improved. # imgabs0 #

The invention discloses a conjugated polymer photoelectric material containing non-centrosymmetric benzodithiazole as well as a preparation method and application of the conjugated polymer photoelectric material. The conjugated polymer containing the non-centrosymmetric benzodithiazole provided by the invention has conjugated main chain and side chain groups; wherein a conjugated main chain contains a non-centrosymmetric benzodithiazole structure and other copolymerization units D, and a side chain group is an alkyl chain R. Due to the conjugated main chain structure of the polymer, the polymer shows semiconductor characteristics and has abundant photoelectric properties; meanwhile, the group R can be dissolved in an organic solvent, and is suitable for preparing photoelectric devices by adopting processing methods such as printing and the like. The conjugated polymer containing the non-centrosymmetric benzodithiazole can be used as a photovoltaic active layer and the like to be applied to photoelectric devices, the short-circuit current density and filling factors of the devices are remarkably improved, and the conjugated polymer has a good application prospect.

The invention relates to the technical field of solar cells, particularly provides an indium-free heterojunction solar cell, a preparation method thereof and a photovoltaic module, and aims to solve the problems that a TCO layer of an existing heterojunction cell is poor in conductivity and the conversion efficiency is reduced. To this end, the indium-free heterojunction solar cell of the present invention comprises: a substrate having a first surface and a second surface opposite to each other; the first passivation layer, the first indium-free transparent conductive oxide layer and the antireflection layer are sequentially arranged on the first surface; the second passivation layer, the P-type microcrystalline silicon thin film layer and the second indium-free transparent conductive oxide layer are sequentially arranged on the second surface; the upper grid line is arranged on the first indium-free transparent conductive oxide layer, and a first ion heavily doped region is arranged at the joint of the first indium-free transparent conductive oxide layer and the upper grid line; and the lower grid line is arranged on the second indium-free transparent conductive oxide layer, and a second ion heavily doped region is arranged at the joint of the lower grid line and the second indium-free transparent conductive oxide layer. According to the cell, through indium-free treatment, the cost is reduced, and the conversion efficiency of the cell is improved.

The invention is suitable for the technical field of perovskite solar cells, and provides an anti-solvent-resistant trans-perovskite solar cell and a preparation method thereof. The green anti-solvent dimethyl carbonate is used for replacing the traditional high-toxicity chlorobenzene anti-solvent, so that the problem of environmental pollution in the preparation process of the perovskite solar cell is solved. The prepared perovskite thin film is larger in grain size, higher in crystallization quality, fewer in defect and higher in flatness and density, most leakage current loss is reduced, energy loss caused by non-radiative recombination is restrained, and the current density of the perovskite solar cell is greatly improved. According to the perovskite solar cell, the carrier transmission problem is improved, carrier recombination between perovskite and the electron transmission layer is inhibited, and therefore the open-circuit voltage, the filling factor, the power conversion efficiency, the stability and the like of the perovskite solar cell are greatly improved.

This invention discloses a TopCon battery and its fabrication method. The method includes: providing an N-type silicon substrate; the N-type silicon substrate includes a front side and a back side; fabricating a first tunneling oxide layer and a first doped layer on the back side; fabricating a second tunneling oxide layer and a second doped layer on the front side; removing the second tunneling oxide layer and the second doped layer from a predetermined texturing area on the front side to expose a portion of the N-type silicon substrate, and texturing the exposed portion of the N-type silicon substrate surface to form a textured structure; screen printing and high-temperature sintering the first doped layer on the back side and the second doped layer on the front side to form a first electrode in contact with the first doped layer on the back side, and a second electrode in contact with the second doped layer on the front side. Using the above method, the contact resistivity between the electrode and the front surface field layer is reduced, the fill factor of the battery is reduced, and thus the conversion efficiency of the battery is improved.

The invention discloses a perovskite solar cell, and relates to the technical field of solar cells. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a transparent conductive layer which are stacked in sequence, wherein the conductive substrate, the hole transport layer, the perovskite light absorption layer, the electron transport layer and the transparent conductive layer are stacked in sequence; wherein an ionic liquid layer is arranged between the hole transport layer and the perovskite layer, the ionic liquid layer comprises ionic liquid, the ionic liquid comprises imidazole cations and anions, the structural formula of the imidazole cations is shown as a formula I, R1 is selected from C4-C10 alkyl, R2 is selected from C4-C10 alkyl, and R3 is selected from C4-C10 alkyl. And anions are selected from any one of bis (trifluoromethanesulfonyl) imine radical, tetrafluoroborate radical, hexafluorophosphate radical and thiocyanate radical, so that the problem of limited performance improvement of the perovskite solar cell caused by energy level mismatching and interface defects between the hole transport layer and the perovskite layer in the prior art is solved.

The invention relates to the field of photovoltaic technology, and discloses a back contact solar cell structure and a preparation method thereof, the back contact solar cell structure comprises a silicon substrate, the back surface of the silicon substrate is provided with a p-type region and an n-type region, and the height positions of the p-type region and the n-type region on the back surface of the silicon substrate are mutually staggered. According to the invention, the spacing structure, the n-type heavily doped region and the p-type heavily doped region are arranged in the vertical longitudinal mode, so that the n-type heavily doped region and the p-type heavily doped region are separated and staggered in the longitudinal height, the width occupied by the gap region in the transverse direction is greatly reduced, the width of the transverse n-type heavily doped region and the width of the transverse p-type heavily doped region are widened to the maximum extent, and the width of the gap region is increased to the maximum extent. And meanwhile, the n-type heavily doped region and the p-type heavily doped region are isolated, so that the electric leakage of the battery is reduced, and higher battery conversion efficiency is obtained.