1490results about How to "Improve fill factor" patented technology

A hyperspectral imager that achieves accurate spectral and spatial resolution by using a micro-lens array as a series of field lenses, with each lens distributing a point in the image scene received through an objective lens across an area of a detector array forming a hyperspectral detector super-pixel. Spectral filtering is performed by a spectral filter array positioned at the objective lens so that each sub-pixel within a super-pixel receives light that has been filtered by a bandpass or other type filter and is responsive to a different band of the image spectrum. The micro-lens spatially corrects the focused image point to project the same image scene point onto all sub-pixels within a super-pixel.

A memory array includes a base circuitry layer and a plurality of memory array layers stacked sequentially to form the memory array. Each memory array layer is electrically coupled to the base circuitry layer. Each memory array layer includes a plurality of memory units. Each memory unit includes a vertical pillar transistor electrically coupled to a memory cell.

A hyperspectral imager that achieves accurate spectral and spatial resolution by using a micro-lens array as a series of field lenses, with each lens distributing a point in the image scene received through an objective lens across an area of a detector array forming a hyperspectral detector super-pixel. Each sub-pixel within a super-pixel has a bandpass or other type filter to pass a different band of the image spectrum. The micro-lens spatially corrects the focused image point to project the same image scene point onto all sub-pixels within a super-pixel. A color separator can be used to split the image into sub-bands, with each sub-band image projected onto a different spatially corrected detector array. A shaped limiting aperture can be used to isolate the image scene point within each super-pixels and minimize energy coupling to adjacent super-pixels.

An integrated circuit (1) has an array of single photon avalanche diodes (SPADS), a plurality of read-out circuits, each SPADS being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and / or a digital asynchronous counter. The plurality of SPADS are coupled to one single read-out circuit. The read-out circuit may have a transformer for decoupling the SPAD from other parts of the read-out circuit.

A pixel cell array architecture having a multiple pixel cells with shared pixel cell components. The individual pixel cell architecture increases the fill factor and the quantum efficiency for the pixel cell. The common pixel cell components may be shared by a number of pixels in the array, and may include several components that are associated with the readout of a signal from the pixel cell. Other examples of the pixel array architecture having improved fill factor for pixels in the array include an angled transfer gate and an efficiently located, shared capacitor.

A wireless charging coil is provided herein. The wireless charging coil comprising a first stamped coil having a first spiral trace, the first spiral trace defining a first space between windings, and a second stamped coil having a second spiral trace, the second spiral trace defining a second space between windings, wherein the first stamped coil and second stamped coil are planar to and interconnected with one another, such that the first stamped coil is positioned within the second space of the second stamped coil, and the second stamped coil is positioned within the first space of the first stamped coil.

Described herein is a circuit and related method for improving the dynamic range and the linearity characteristic of a CMOS image sensor. In various embodiments of the CMOS image sensor, a current sampler, a comparator, and a 1-bit memory are incorporated in each pixel circuit. In the image sensor, pixels are arranged in columns and a column slice is used to read the digital and analog singles from each column. In addition, a calibration circuit is incorporated in the sensor circuit for providing calibration current, which is used to generate calibration parameter. The image sensor operates in three non-overlapping modes: the difference mode, the WDR mode, and the calibration mode. The image sensor is switched among the three modes by control signals, which are provided to the image sensor by various control circuits. The image sensor normally operates in the difference mode and switches to the WDR mode when the difference between consecutive frames is over a threshold. The calibration mode allows the image sensor generate calibration parameters which are used to improve the linearity of the sensor through a interpolation method.

The invention relates to the manufacturing of a multilayer structure and especially it relates to the manufacturing of a three-dimensional structure and its use as an electronics assembly substrate and as a winding for transformers and inductors. When a multilayer structure is manufactured by folding a conductor-insulator-conductor laminate, where the conductor layers to be separated from each other follow each other on opposite sides of the conductor-insulator-conductor laminate in the sections following each other and where the insulator has been removed from the places where the conductor layers are to be connected together after folding, it is possible to manufacture a wide range of three-dimensional multilayer structures where the volume occupied by the windings over the total volume can be maximized. Alternatively, by using the method it is also possible to manufacture a multilayer structure where components have been buried inside. The method makes it also possible to make connections between layers in a flexible manner. Among other issues, the method can be easily automated for mass-production.

A storage gate pixel operates such that the storage gate is not required to have the same capacity as a photodiode of the pixel. This provides greater fill factor for the pixel and a higher signal to noise ratio.

To produce a transparent optical element, the process starts with the production of an optical component having at least one transparent array of cells that are juxtaposed parallel to one surface of the component, each cell being hermetically sealed and containing a substance having an optical property. This optical component is then cut along a defined contour on its surface, corresponding to a predetermined shape of the optical element. Preferably, the array of cells constitutes a layer having a height of less than 100 μm perpendicular to the surface of the component.

One embodiment is directed to a mirror device (for a device such as an optical switch, scanner or projector) having a movable mirror structure with an attached magnet. The mirror structure is movably mounted on a base structure, which includes an actuation coil for controlling movement of the mirror structure. Another embodiment is directed to a mirror device (in a device such as an optical switch, scanner or projector) having a high mirror fill factor. The device includes a mirror mounted on a support member, which is connected to a gimbal frame. The support member includes an enlarged portion configured to at least partially extend over the gimbal frame. The mirror substantially covers the enlarged portion of the support member, thereby providing the device with a high mirror fill factor. A further embodiment is directed to a mirror support structure for a movable mirror device (in a device such as an optical switch, scanner or projector). The mirror support structure includes a post member and an enlarged lid member, one of which includes a plurality of holes and the other of which includes a corresponding plurality of projections. The post and lid members are assembled by positioning the projections in the corresponding holes.

In order to minimize light diffraction along the direction of switching and more particularly light diffraction into the acceptance cone of the collection optics, in the present invention, micromirrors are provided which are not rectangular. Also, in order to minimize the cost of the illumination optics and the size of the display unit of the present invention, the light source is placed orthogonal to the rows (or columns) of the array, and / or the light source is placed orthogonal to a side of the frame defining the active area of the array. The incident light beam, though orthogonal to the sides of the active area, is not however, orthogonal to any substantial portion of sides of the individual micromirrors in the array. Orthogonal sides cause incident light to diffract along the direction of micromirror switching, and result in light ‘leakage’ into the ‘on’ state even if the micromirror is in the ‘off’ state. This light diffraction decreases the contrast ratio of the micromirror. The micromirrors of the present invention result in an improved contrast ratio, and the arrangement of the light source to micromirror array in the present invention results in a more compact system. Another feature of the invention is the ability of the micromirrors to pivot in opposite direction to on and off positions (the on position directing light to collection optics), where the movement to the on position is greater than movement to the off position. A further feature of the invention is a package for the micromirror array, the package having a window that is not parallel to the substrate upon which the micromirrors are formed. One example of the invention includes all the above features.

The invention provides a lead-free silver conductive paste used for positive electrode of solar battery and a preparation technique thereof. The paste comprises the following materials by weight percentage: 65 to 85 percent of silver powder, 2 to 8 percent of lead-free glass powder, 10 to 25 percent of organic carrier and 0.1 to 3 percent of additive. The paste adopts the lead-free glass powder of Si-B-Bi-Al-Ti-Zn-O series to replace the traditional lead-bearing glass powder; and the series glass powder has lower softening point, can lead the silver electrode to have good adhesive force after sintering, and ensures the silver electrode to be well contacted with a silicon substrate. In addition, zinc resinate is used as the additive in the invention, not only can well improve the printing performance of the paste, but also can improve the electrical property of the electrode.

Microlens arrays (105) having high focusing efficiencies are provided. The high focusing efficiencies are achieved by accurately producing the individual microlenses making up the array at high fill factors. Arrays of positive microlenses are produced by forming a master having a concave surface-relief pattern (101) in a positive photoresist (21) using direct laser writing. Through this approach, the problems associated with the convolution of a finite laser beam with a desired profile for a microlens are overcome. The microlens arrays of the invention have focusing efficiencies of at least 75%.

Disclosed are a pixel, a pixel array, an image sensor and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first charge storage unit for storing charges converted by the photo-electro conversion unit; a first switching unit for transferring the charges from the photo-electro conversion unit to the first charge storage unit; a second charge storage unit for storing the charges converted by the photo-electro conversion unit; a second switching unit for transferring the charges from the photo-electro conversion unit to the second charge storage unit; a third switching unit for connecting the second charge storage unit with the first charge storage unit; and an output unit for outputting information about quantity of the charges stored in the first and second charge storage units. The light having the high intensity of illumination or the low intensity of illumination is sensed in the wide range.

The invention discloses a shunting-type isothermal sulfur-tolerant conversion process. The process comprises the following steps: shunting raw coal gas from exterior into at least two parts; leading overheat stream in the first part of the raw coal gas to increase the temperature to 200-300 DEG C; and then entering a first-stage conversion reaction step to carry out a conversion reaction and generate first conversion gas; and conveying the other part of the raw coal gas to next-stage conversion reaction step to carry out a conversion reaction. The catalyst bed of a shift converter has the advantages of stable temperature, simple control, convenient operation and low output CO content. The invention has the advantages of short conversion flows, few equipment, reduced resistance, great byproduct stream amount, high overheat temperature, stream pressure and heat recovery rate, and the like, thereby achieving the aims of reducing conversion stages, equipment number and resistance fall, decreasing investment, having great byproduct stream amount and high overheat temperature, stream pressure and heat recovery rate, reducing conversion stream consumption and outward wastewater discharge, protecting the environment and easily maximizing the device equipment. The invention also discloses shunting-type isothermal sulfur-tolerant conversion equipment used by the process.

The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.

The invention discloses a method for manufacturing a heat-resistant aluminum alloy wire for a power cable, and belongs to the technical field of design and manufacture of power transmission lines. The aluminum alloy wire uses magnesium, copper, iron, silicon, boron, cerium-rich rare earth, zirconium, yttrium, cobalt and the like as alloying elements. The manufacturing process for the aluminum alloy wire comprises the following steps: adding the alloying elements into fused aluminum of a shaft furnace, casting the mixture after smelting into a cast strip and thermally rolling the cast strip, then performing cold-drawing processing, annealing in the cold-drawing process, adopting recrystallization and thermal treatment before final cold-drawing, and later performing trace cold-drawing processing. The aluminum alloy wire not only has good bending resistant performance and forming performance, but also has high conductivity and good heat resistance (comprising high-temperature creep resistance), and can ensure the stability of electrical connection under both normal temperature and high temperature.

The invention provides a composite electric-conducting material, in particular a graphene / copper nanowire composite electric-conducting material which comprises graphene, copper nanowires and a bonding agent, wherein the weight of the copper nanowires accounts for 1-99% of the weight of the graphene, and the weight of the bonding agent accounts for 1-50% of the total weight of the graphene / copper nanowires; the graphene is divided into 1-20 layers and has the area of 1-2500 mum<2>; and the length / diameter ratio of the copper nanowires is 10-10000. The invention further provides a preparation method of the composite electric-conducting material and a back electrode containing the composite electric-conducting material. The composite electric-conducting material provided by the invention has the advantages of low cost and excellent electric performance and can be produced in a large scale.

A photodiode is provided by the invention, including an n-type active region and a p-type active region. A first one of the n-type and p-type active regions is disposed in a semiconductor substrate at a first substrate surface. A second one of the n-type and p-type active regions includes a high-field zone disposed beneath the first one of the active regions at a first depth in the substrate, a mid-field zone disposed laterally outward of the first active region at a second depth in the substrate greater than the first depth, and a step zone connecting the high-field zone and the mid-field zone in the substrate.

An image-sensing element has an array of photodiodes or other photodetecting elements and performs sigma-delta analog-to-digital conversion on the outputs of the photodetecting elements. The sigma-delta analog-to-digital converters have components divided between pixel-level and row-level structures, with each row-level structure connected to its pixel-level structures to define a multiplexed-input-separated sigma-delta analog-to-digital converter. The converter can include an integrator or can rely on an integration effect of the photodetecting element. The feedback required for sigma-delta analog-to-digital conversion can involve digital-to-analog converters located at each row-level structure or at each pixel-level structure.

In order to minimize light diffraction along the direction of switching and more particularly light diffraction into the acceptance cone of the collection optics, in the present invention, micromirrors are provided which are not rectangular. Also, in order to minimize the cost of the illumination optics and the size of the display unit of the present invention, the light source is placed orthogonal to the rows (or columns) of the array, and / or the light source is placed orthogonal to a side of the frame defining the active area of the array. The incident light beam, though orthogonal to the sides of the active area, is not however, orthogonal to any substantial portion of sides of the individual micromirrors in the array. Orthogonal sides cause incident light to diffract along the direction of micromirror switching, and result in light ‘leakage’ into the ‘on’ state even if the micromirror is in the ‘off’ state. This light diffraction decreases the contrast ratio of the micromirror. The micromirrors of the present invention result in an improved contrast ratio, and the arrangement of the light source to micromirror array in the present invention results in a more compact system. Another feature of the invention is the ability of the micromirrors to pivot in opposite direction to on and off positions (the on position directing light to collection optics), where the movement to the on position is greater than movement to the off position. A further feature of the invention is a package for the micromirror array, the package having a window that is not parallel to the substrate upon which the micromirrors are formed. One example of the invention includes all the above features.

All critical circuit components, including the sample coils, are located along with the spinner assembly in a region that may be evacuated to high vacuum for thermal insulation and high-voltage operation. A hermetically sealed spinner assembly simultaneously satisfies the requirements of hermeticity, low total emissivity, rf compatibility, spinning performance, magnetic compatibility, and high filling factor by utilizing metal construction except for the central region near the rf sample coils. Hence, it is possible to maintain high vacuum in the region external to the MAS spinner assembly even over a broad range of bearing and drive gas temperatures. A bundle of optical fibers is provided for tachometry for spin rates up to 60 kHz. The use of alumina disc capacitors allows the noise contributions from the most critical capacitors to be reduced to a minor fraction of the total and simplifies high voltage operation.

Discussed in an organic light emitting display device including a first pixel, and a second pixel being adjacent the first pixel, wherein each of the first pixel and the second pixel includes a plurality of subpixels, wherein the plurality of subpixels include a green subpixel, a red subpixel, and a blue subpixel, and wherein the red subpixel and the blue subpixel are shared by the first pixel and the second pixel.

The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10−6 Ω·cm or more and 1×10−3 Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.

The invention provides a semi-conductor perovskite solar cell and a preparing method thereof and belongs to the field of solar cells. The semi-conductor perovskite solar cell solves the problems that materials of an existing perovskite solar cell are high in price, and the process is complex, and meanwhile keeps the high photoelectric conversion efficiency. The semi-conductor perovskite solar cell sequentially comprises a substrate, a conducting layer, a hole barrier layer, a mesoporous electron collecting layer, a mesoporous hole collecting layer and a mesoporous back electrode layer from bottom to top. The preparing method of the semi-conductor perovskite solar cell comprises the steps of preparing an electrode region, the hole barrier layer, the mesoporous electron collecting layer, the mesoporous hole collecting layer, the mesoporous back electrode layer and light-absorbing materials filled with perovskite. According to the semi-conductor perovskite solar cell, a mesoporous insulating layer is additionally arranged, and the step of preparing the mesoporous insulating layer is added to the preparing method. The semi-conductor perovskite solar cell solves the problems that the materials of the existing perovskite solar cell are high in price, and the process is complex, and open-circuit voltage, short-circuit current and fill factors of the cell are increased.