Dicing die bond film

a die-cutting and bonding technology, applied in the direction of heat-activated film/foil adhesives, film/foil adhesives, transportation and packaging, etc., can solve the problem of the circuit on the semiconductor chip being broken, and achieve good tackiness and workability

Inactive Publication Date: 2012-03-15
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]The present invention has been made in view of the above-described problems, and an object thereof is to provide a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability.

Problems solved by technology

Because of that, there has been a problem that a circuit on the semiconductor chip is broken by the generated static electricity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0136]An adhesive composition solution having a concentration of 23% by weight was obtained by dissolving the following (a) to (g) in methylethylketone.

[0137](a) 100 parts of an acrylic ester polymer containing ethyl acrylate-methyl methacrylate as a main component (Paracron W-197CM manufactured by Negami Chemical Industries Co., Ltd.)

[0138](b) 228 parts of an epoxy resin 1 (Epicoat 1004 manufactured by Japan Epoxy Resin Co., Ltd.)

[0139](c) 206 parts of an epoxy resin 2 (Epicoat 827 manufactured by Japan Epoxy Resin Co., Ltd.)

[0140](d) 466 parts of a phenol resin (Milex XLC-4L manufactured by Mitsui Chemicals, Inc.)

[0141](e) 400 parts of a spherical copper powder 1 (SF-Cu manufactured by Nippon Atomized Metal Powder Corporation, average particle size 10 μm)

[0142](f) 267 parts of a spherical copper powder 2 (SF-Cu manufactured by Nippon Atomized Metal Powder Corporation, average particle size 6 μm)

[0143](g) 3 parts of a curing catalyst (C11-Z manufactured by Shikoku Chemicals Corpora...

example 2

[0145]In Example 2, a die bond film B according to the present example was produced in the same manner as in Example 1 except the spherical copper powder 1 of (e) and the spherical copper powder 2 of (f) were changed to 367 parts of a spherical silver powder 1 (SFR-AG manufactured by Tokuriki Chemical Research Co., Ltd., average particle size 5 μm) and 300 parts of a spherical silver powder 2 (AgC-156I manufactured by Fukuda Metal Foil & Powder Co., Ltd., average particle size 3 μm).

example 3

[0146]In Example 3, a die bond film C according to the present example was produced in the same manner as in Example 1 except the spherical copper powder 1 of (e) and the spherical copper powder 2 of (f) were changed to 2502 parts of a spherical copper powder 1 (Cu-HWQ manufactured by Fukuda Metal Foil & Powder Co., Ltd., average particle size 5 μm) and 1500 parts of a spherical copper powder 2 (Cu-HWQ manufactured by Fukuda Metal Foil & Powder Co., Ltd., average particle size 1.5 μm).

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Abstract

The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10−6 Ω·cm or more and 1×10−3 Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention also relates to a dicing die bond film.[0003]2. Description of the Related Art[0004]Conventionally, a dicing die bond film including a dicing film and a thermosetting type die bond film laminated thereon is used in a process of manufacturing a semiconductor device (refer to Japanese Patent Application Laid-Open No. 2008-218571, for example). In the process of manufacturing a semiconductor device using this dicing die bond film, first, a semiconductor wafer is pasted and fixed to the dicing die bond film, and dicing is performed in this state. With this operation, the semiconductor wafer is processed into individual pieces having a prescribed size, which serves as semiconductor chips. Next, pickup of a semiconductor chip is performed to peel the semiconductor chip fixed to the dicing die bond film from the dicing film.[0005]In the pickup step, when the semiconductor chip with a die bond film is peel...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/06B32B5/16B32B7/12H01L21/78C09J7/35
CPCC08K7/00C09J7/0203C09J9/02C09J2201/622C09J2203/326C09J2205/102H01L21/67132H01L23/3121H01L24/29H01L24/32H01L24/45H01L24/48H01L24/73H01L24/85H01L24/92H01L25/0657H01L2224/2929H01L2224/293H01L2224/29324H01L2224/29339H01L2224/29344H01L2224/29347H01L2224/29355H01L2224/2939H01L2224/294H01L2224/32145H01L2224/32225H01L2224/32245H01L2224/45124H01L2224/45144H01L2224/45147H01L2224/48145H01L2224/48227H01L2224/48247H01L2224/73265H01L2224/85205H01L2224/92247H01L2924/01012H01L2924/01013H01L2924/01029H01L2924/01047H01L2924/01051H01L2924/01057H01L2924/01079H01L2924/01082H01L2224/2919H01L2924/01005H01L2924/01006H01L2924/01019H01L2924/0102H01L2924/01023H01L2924/01033H01L2924/01045H01L2924/01074H01L2924/01077H01L2924/0665H01L21/6836H01L2221/68327H01L2221/68336H01L2221/6834H01L2221/68377H01L2924/01014H01L2924/01028H01L2924/10253H01L2924/15747H01L2224/48091H01L2924/3025H01L21/78H01L2924/01015Y10T428/28Y10T428/25Y10T428/2817H01L2924/00014H01L2924/00H01L2924/00012H01L2924/3512H01L2924/00011H01L2924/15788H01L2924/181H01L2924/12042C09J7/35C09J2301/312C09J2301/408
Inventor AMANO, YASUHIROMORITA, MIKIKIMURA, YUTA
Owner NITTO DENKO CORP
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