1826results about How to "Increase the open circuit voltage" patented technology

The present invention provides a thin film amorphous silicon-crystalline silicon back heterojunction and back surface field device configuration for a heterojunction solar cell. The configuration is attained by the formation of heterojunctions on the back surface of crystalline silicon at low temperatures. Low temperature fabrication allows for the application of low resolution lithography and/or shadow masking processes to produce the structures. The heterojunctions and interface passivation can be formed through a variety of material compositions and deposition processes, including appropriate surface restructing techniques. The configuration achieves separation of optimization requirements for light absorption and carrier generation at the front surface on which the light is incident, and in the bulk, and charge carrier collection at the back of the device. The shadowing losses are eliminated by positioning the electrical contacts at the back thereby removing them from the path of the incident light. Back contacts need optimization only for maximum charge carrier collection without bothering about shading losses. A range of elements/alloys may be used to effect band-bending. All of the above features result in a very high efficiency solar cell. The open circuit voltage of the back heterojunction device is higher than that of an all-crystalline device. The solar cell configurations are equally amenable to crystalline silicon wafer absorber as well as thin silicon layers formed by using a variety of fabrication processes. The configurations can be used for radiovoltaic and electron-voltaic energy conversion devices.

An electrical current generating system is disclosed that includes a fuel cell operating at a temperature of at least about 250° C. (for example, a molten carbonate fuel cell or a solid oxide fuel cell), a hydrogen gas separation system or oxygen gas delivery system that includes a compressor or pump, and a drive system for the compressor or pump that includes means for recovering energy from at least one of the hydrogen gas separation system, oxygen gas delivery system, or heat of the fuel cell. The drive system could be a gas turbine system. The hydrogen gas separation system or the oxygen gas delivery system may include a pressure swing adsorption module.

Disclosed are a metal wrap through solar cell including a metal wrap through (MWT) structure as a back contact silicon solar cell and a fabrication method thereof.

The invention discloses an aluminum pulp composition of a crystal silicon solar cell and a preparation method thereof, wherein an aluminum pulp is prepared by the following compositions in percentage by weight: 50-85 percent of spherical aluminum powder, 2-15 percent of lead-free glass adhesive, 10-35 percent of organic carrier and 0.5-6 percent of metal/nonmetal power additive. The prepared aluminum pulp is used for a single crystal silicon solar cell, can enable warpage of a silicon wafer to be small, and aluminum films are dense and uniform, have no aluminum pills, do not bulb and have strong adhesion force and high photoelectric conversion efficiency.

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.

The present invention was made to improve interface characteristics between a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. A manufacturing method of a photovoltaic device comprising an i-type amorphous silicon thin film (12) and a p-type amorphous silicon thin layer (13) laminated in this order on a front surface of an n-type single crystalline silicon substrate (11), and an i-type amorphous silicon layer (14) and an n-type amorphous silicon layer (15) laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon layer (12) is formed after the front surface of the single crystalline silicon substrate (11) is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate (11) and the i-type amorphous silicon layer (12).

The invention provides a back contact solar battery and a preparing method of the back contact solar battery. The preparing method of the back contact solar battery includes the steps of providing a first mould slide boat and a second mould slide boat, wherein the first mould slide boat comprises first film growing areas and first shielding areas which are distributed alternatively, and the second mould slide boat comprises second film growing areas and second shielding areas which are distributed alternatively, the first film growing areas correspond to the second shielding areas, and the second film growing areas correspond to the first shielding areas. First doped amorphous silicon indication areas and second doped amorphous silicon indication areas are formed on the surfaces, with passivated layers, of monocrystalline silicon substrates through the mould slide boats, wherein the first doped amorphous silicon indication areas and the second doped amorphous silicon indication areas are opposite in doping type and crossed in distribution. By means of the preparing method, a fork structure of a back field of the back contact solar battery is achieved simply at low cost, additional manufacturing process of forming the passivated layers is needless, and the preparing method of the back contact solar battery is simplified.

Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.

The invention discloses a solar cell and a solar cell module group. The solar cell comprises a substrate, a positive electrode, and a back electrode. The substrate comprises a light-receiving surface where the positive electrode is arranged, a back surface where the back electrode is arranged, and an emitter electrode layer which is located on the light-receiving surface and is provided with a heavily doped region and a light doped region. The positive electrode comprises a first convergence electrode, a second convergence electrode, and a plurality of finger-shaped electrodes. The heavily doped region is provided with a first heavily doped part and a second heavily doped part, which are located between the first convergence electrode and the second convergence electrode. The solar cell can improve the collection efficiency of charge carriers, and reduces the recombination probability of charge carriers, thereby improving the collection efficiency of current, and improving the photoelectric conversion efficiency and open-circuit voltage of the solar cell.

A socket is described for a lighting assembly having a socket body and an electrical connector with a seal in the socket to seal around a light source. The socket is preferably configured to be independent of the mounting arrangement for the lighting assembly. An insulator is also disclosed for a lamp such as a fluorescent lamp having a body which covers the contact on the lamp so as to form a recessed lamp conductor. The combination of a socket and lamp insulator is also disclosed for providing a socket and insulator assembly for reducing the possibility of injury or damage due to high open circuit voltage, environmental effects and the like. Additionally, a lighting assembly is disclosed incorporating the insulator, socket and mounting arrangements.</PTEXT>

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron/gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.

The invention discloses a low-cost efficient solar cell electrode grid line structure which comprises two parts of main grid lines and thin grid lines, wherein the main grid lines are symmetrically distributed by taking a silicon wafer center as a center, the thin grid lines are equidistantly distributed in the way of being vertical to the main grid lines in parallel, the main grid lines adopt a sectional type design, and all the subsections are connected by thin lines. The electrode grid line structure adopts a design that the grid lines are thinned, the shading areas of the grid lines are reduced, the number of the grid lines is increased so that the lateral transmission loss of a carrier is lowered and the collection efficiency of the carrier is increased; moreover, the main grid lines are divided into sections, thinned and hollowed out additionally, so the silver usage is reduced, the manufacturing cost of a solar cell is reduced, meanwhile, the contact area compound is lowered, accordingly, the open-circuit voltage of the solar cell is increased, and the cost is greatly lowered; and compared with the widespread products of the industry, in the design scheme which is obtained by optimizing the scheme, the shading area of the grid lines on the front side of the solar cell is reduced by about 1%, the conversion efficiency is improved by 0.2-0.3%, and the silver paste consumption is reduced by about 35%.

The invention relates to a preparation method of photo anode of dye-sensitized solar cell with optical gradient, comprising the following steps: (1), adding sodium hydroxide or ammonia water into the inorganic titanium slat used as the precursor to generate the precipitation, washing the precipitation with water to acquire solid in the gel manner, peptizing the same to prepare the pale yellow transparent solution, diluting the prepared solution, and performing hydro-thermal process on the same so as to prepare the transparent TiO2 solution of anatase phase; (2), depositing a TiO2 compact layer on a conductive substrate by spin-coating, dipping/coating or casting method; (3), depositing a layer of porous TiO2 film on the TiO2 compact layer by screen printing, blade coating method or spray coating method; and (4), calcining the film with two structure so as to form the photo anode with optical gradient. In the invention, the colloidal sol for preparing the transparent compact layer does not contain any organic matter and other impurities; the high temperature sintering is not required; the blocking layer formed between the conductive layer and the porous film blocks the corrosion of electrolyte on the substrate; and the preparation method has excellent application foreground.

Provided is an alkali metal doping method in the large-scale production of CIGS (copper, indium, gallium, selenium) thin-film solar cells. The method comprises a step of depositing an Mo metal back electrode layer on a glass substrate, a stainless indium substrate or a flexible substrate; a step of preparing a CIGS optical absorption layer; performing alkali metal element doping and deposition on the CIGS optical absorption layer; a step of performing thermal treatment on the alkali metal thin film formed after the deposition so as to make the alkali metal permeate into a CIGS crystal boundary and to improve characteristics of the crystal boundary; a step of cleaning alkali metal residues; a step of depositing a CdS, ZnS or InS buffer layer on the CIGS thin film after the cleaning of the alkali metal residues; and a step of depositing a high-resistance i-ZnO layer and a high-resistance ZnO:Al window layer, and thus a CIGS solar cell is formed. According to the alkali metal doping method, after annealing, the permeation of the alkali metal does not affect the generation of the CIGS crystal lattices; after the permeation of the alkali metal into the CIGS optical absorption layer, filling factors are substantially improved and the cell photoelectric conversion efficiency is improved when the open circuit voltage is improved.

Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, field effect transistors, and photodetectors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

The embodiment of the invention discloses a texturing method for a solar cell. The method comprises the following steps of: texturing the front surface of the solar cell; and polishing the back surface of the solar cell. By the provided texturing method, a low-reflectivity textured surface structure is formed on the front surface of the solar cell, and a high-reflectivity polished surface structure is formed on the back surface of the solar cell; and by the high-reflectivity polished surface structure, the long wave response is increased, and a recombination rate of a back metal electrode and a silicon wafer is reduced; and the open-circuit voltage, the short-circuit current and filling factors are improved, so the utilization efficiency of the solar cell can be improved. Furthermore, the texturing method is lower in cost, and is simple, so the texturing method can be widely applied to commercial production.

The invention discloses a method for manufacturing a silicon solar cell. In the process of manufacturing a PN junction on a silicon wafer, a selective diffusion technology method is adopted, i,e. laser is utilized to heat a position, on which a positive electrode intends to be manufactured, on the surface of the silicon wafer; and under the action of heating, phosphorus in a phosphorus source uniformly adhered on the surface diffuses towards the inner of the silicon wafer, thus a heavy doping zone with smaller sheet resistance is formed at the position on which the positive electrode intends to be manufactured to effectively reduce the sheet resistance of the silicon solar cell, thereby not only being beneficial for increasing the open-circuit voltage of the silicon solar cell; the increase of the open-circuit voltage effectively improves the conversion efficiency of the silicon solar cell, reduces ohmic contact of a metal electrode and the silicon solar cell, thereby reducing the series resistance of the silicon solar cell, and being capable of meeting the purpose of industrialized production better.