284results about How to "Increase the open circuit voltage" patented technology

The invention provides front fine grid silver paste for an N-type TOPCON battery and the battery. The silver paste is applied to an LECO treatment process. The polymer nano-silver solution in the silver paste improves the contact performance in the N-type TOPCON laser-assisted sintering process, reduces recombination, and improves open-circuit voltage and short-circuit current. Compared with micron-sized glass powder, the nano glass powder in the silver paste has the advantages that the single-point etching area is reduced, the etching distribution density is increased, the contact resistance is ultralow, meanwhile, the open-circuit voltage can be effectively improved due to the fact that the etching depth becomes shallow and the metal recombination is low, and the purpose of improving the efficiency is achieved. The problem that in the process of preparing the N-type TOPCON battery through the LECO technology, the speed that silver atoms diffuse into the surface of a silicon wafer is low, the open-circuit voltage and the short-circuit current are affected, and consequently the photoelectric conversion efficiency is low is solved. The invention further provides a battery, the battery is prepared through the LECO technology, and raw materials comprise the silver paste for the N-type TOPCon battery.

The invention discloses a preparation method of a solar cell, and the method comprises the following steps: placing an N-type silicon wafer in a furnace tube of a diffusion furnace, and introducing nitrogen and oxygen into the furnace tube to form a first oxide layer on the surface of the silicon wafer; boron trichloride, oxygen and nitrogen are introduced into the furnace tube, so that a boron diffusion layer is formed on the surface, away from the silicon wafer, of the first oxide layer; introducing nitrogen into the furnace tube, and controlling the temperature of the furnace tube to be a first temperature so as to carry out oxygen-free propulsion of the boron element; introducing nitrogen and oxygen into the furnace tube, and controlling the temperature of the furnace tube to rise from the first temperature to a second temperature so as to carry out aerobic propulsion of the boron element; dry oxygen and wet oxygen are alternately introduced into the furnace tube for multiple times to form a second oxide layer; the temperature in the furnace tube is reduced, and dry oxygen continues to be introduced into the furnace tube; and nitrogen is introduced into the furnace tube, the temperature in the furnace tube is reduced, and boron diffusion of the silicon wafer is completed. According to the preparation method of the solar cell, the silicon wafer can have low surface concentration shallow junctions and uniform sheet resistance.

The invention discloses a solar cell which comprises a silicon substrate, the surface of at least one side of the silicon substrate is provided with a micro-suede of a sand dune-like structure, and a tunneling oxide layer is laminated on the micro-suede; the sand dune-like structure is provided with at least one vertex, and 3-6 curved side edges pass through each vertex; and the side edges are sunken towards the inner part of the sand dune-like structure. The invention also provides a preparation method of the solar cell. According to the solar cell, the surface reflectivity of the solar cell can be effectively reduced, and the characteristics of surface passivation, surface contact and the like are improved, so that the transmission efficiency and the collection efficiency of carriers are improved, and the short-circuit current density and the conversion efficiency of the solar cell are further improved.

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The invention aims to solve the problem that the cell performance is influenced by non-uniform coverage of the perovskite layer on the hole transport layer. For the purpose, the preparation method of the perovskite solar cell comprises the steps of preparing a hole transport layer on a substrate, preparing an interface modification layer on the hole transport layer, preparing a perovskite layer on the interface modification layer, and sequentially preparing an electron transport layer and an electrode on the perovskite layer to obtain the perovskite cell, the wettability of the hole transport layer can be improved by introducing 3-hydroxyphenylboronic acid into the adjacent interface of the perovskite layer and the hole transport layer, so that the coverage rate of the perovskite layer is increased, meanwhile, the 3-hydroxyphenylboronic acid is coordinated with metal ions in the perovskite layer, non-radiative recombination between the hole transport layer and the perovskite layer interface can be reduced, and the hole transport efficiency is improved. And the carrier transmission efficiency is improved.

The invention discloses a passivation contact cell with a selective polysilicon layer and a method of making the same. According to the invention, each laser scanning line on the back surface of the TOPCon solar cell adopts a separation form and is separated by the phosphorus heavily-doped polycrystalline silicon layer, so that overlapping of laser scanning paths does not exist, and a part of the phosphorus-doped polycrystalline silicon layer structure in the surrounding area of the main grid is reserved; according to the structure mode, the transmission distance of carriers in a laser ablation area can be reduced, the carriers can be collected by the fine grid more quickly, and the filling factor FF of the cell is improved especially under the special conditions of grid breakage and the like. According to the invention, the laser grooving area is 40%-80% of the total area of the back of the cell, which is beneficial for balancing the passivation performance of the cell while reducing the parasitic absorption of the polycrystalline silicon to light. The passivation contact cell has high short-circuit current, open-circuit voltage and fill factor.

The embodiment of the invention relates to the field of solar cells, provides a solar cell and a preparation method thereof, and at least can solve the problem that the performance of a fragmented cell is poor. The solar cell comprises fragmented cells, at least two fragmented cells are formed by segmenting the same whole solar cell along a first direction, and each fragmented cell comprises a first surface, a second surface and a third surface connected with the first surface and the second surface, the first surface is a partial area of the front surface of the whole solar cell, the second surface is a partial area of the back surface of the whole solar cell, and the third surface is a cross section of the fragmented cell after segmentation processing; the crystalline silicon layer is positioned on the third surface; the silicon oxide layer is positioned on the surface of the crystalline silicon layer; and the metal oxide layer is positioned on the silicon oxide layer.

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

A solar cell includes a cell substrate, a plurality of collector electrodes, a plurality of bus electrode segments, and a plurality of columns of interconnects. The battery substrate has a target surface. The current collection electrodes are arranged on the target surface, extend in the first direction and are distributed at intervals in the second direction intersecting with the first direction. The bus electrode section is located on the target surface and extends in the second direction. And each row of interconnection parts extend along a second direction, and the interconnection parts are arranged on the current collection electrodes. The bus electrode section extends in the second direction and is located in the upper end edge area and / or the lower end edge area of the target surface. On the target surface, the number of the bus electrode sections is smaller than two times of the column number of the interconnection parts, and / or the length of at least one bus electrode section is smaller than or equal to 5.3 mm, and / or the weighted average width of at least one bus electrode section is smaller than or equal to 0.29 mm. And by reducing the number of the bus electrode sections, the current collection electrode can collect current carriers to the maximum extent, and the conversion efficiency of the battery is improved. The utility model also provides a photovoltaic module comprising the solar cell.

The invention is suitable for the technical field of solar cells, and provides a solar cell, a cell assembly and a photovoltaic system, the solar cell comprises a silicon wafer, the surface of which is provided with a P-type doped region; the first P-type doped layer is arranged in the P-type doped region, boron elements and second elements are doped in the first P-type doped layer, the second elements are one or more elements except the boron elements in the IIIA family elements, and the doping activation concentration of the second elements in the first P-type doped layer is larger than that of the boron elements. According to the solar cell provided by the invention, light-induced degradation can be reduced, the power generation power of the cell module is improved, the surface recombination loss can be reduced, the passivation effect is improved, and the efficiency of the solar cell is improved.

The invention discloses a solar cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of solar cells. The solar cell includes: a substrate; the tunneling layer is located on the surface of the substrate; the isolation structure is located on the surface, away from the substrate, of the tunneling layer, and the isolation structure comprises silicon oxide layers and doped buffer layers which are alternately stacked in the first direction perpendicular to the substrate; the first doping layer is located on the surface of the isolation structure away from the substrate; wherein the doping concentration of the first doped layer is greater than that of the doped buffer layer. The doping ions diffused to the tunneling layer are integrally reduced, the influence of internal expansion is reduced, the open-circuit voltage and the filling factor of the solar cell are improved, the product competitiveness of the solar cell is improved, the process window of the annealing process is expanded, and the influence of the annealing process matching on the performance of the solar cell is reduced.

The invention provides a diffusion method and a solar cell. In the diffusion method provided by the invention, a silicon wafer is firstly placed in a diffusion furnace, and pre-oxidation treatment is carried out on the silicon wafer for 200-240 seconds under the conditions that the temperature is 820-840 DEG C, the oxygen flow is 200-500 sccm and the nitrogen flow is 2000-3000 sccm; then, under the conditions that the temperature is 750-860 DEG C and the ratio of the flow of the boron source to the flow of the oxygen is 1: 3-1: 4, carrying out pre-deposition treatment on the silicon wafer for 100-160 seconds; carrying out secondary deposition treatment on the silicon wafer for 100-160 seconds under the conditions that the temperature is 840-900 DEG C and the ratio of the flow of the boron source to the flow of the oxygen is (1: 3)-(1: 4); and finally, performing junction pushing on the silicon wafer under the temperature condition of 850-950 DEG C to prepare a boron diffusion layer. Under the comprehensive action of the pre-oxidation treatment, the pre-deposition, the secondary deposition and the junction pushing treatment, the boron source doping concentration can be reduced, diffusion is uniform, diffusion sheet resistance is increased, and meanwhile PN junction distribution becomes shallow.

The invention provides a solar cell, a photovoltaic module and a preparation method of a doped polycrystalline silicon layer, and relates to the technical field of photovoltaics. The solar cell includes: a silicon substrate; the doped polycrystalline silicon layer is located on the silicon substrate; in the direction perpendicular to the thickness direction of the solar cell, the doped polycrystalline silicon layer comprises a lightly doped polycrystalline silicon part and a heavily doped polycrystalline silicon part. The doping type of the lightly-doped polycrystalline silicon part is the same as that of the heavily-doped polycrystalline silicon part, and the doping concentration of the lightly-doped polycrystalline silicon part is smaller than that of the heavily-doped polycrystalline silicon part; the first transparent conductive layer is located on the doped polycrystalline silicon layer; and the first electrode is located at a position corresponding to the heavily doped polycrystalline silicon part on the first transparent conductive layer. Collection of current carriers is increased, low contact resistance and good passivation performance are achieved, auger recombination of the non-metal area can be reduced, long-wave light parasitic absorption of the non-metal area is reduced, filling factors are improved, and the performance of the solar cell is improved.

The invention relates to the technical field of perovskite solar cell preparation, in particular to a bulk phase passivation perovskite light absorption layer, a solar cell and a preparation method, the bulk phase passivation perovskite light absorption layer is prepared by adopting a perovskite layer prefabricated liquid, the perovskite layer prefabricated liquid comprises (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 and m-F-PEACl, the molar concentration ratio of the (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 to the m-F-PEACl is 1.5: (0.1-1), m-F-PEACl and (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 are matched to form a bulk phase passivated perovskite layer, so that organic cations in the m-F-PEACl interact with uncoordinated lead ions or other defect sites in the (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 to form a stable complex or compound, the defect concentration in perovskite is reduced, comprehensive and effective passivation is realized, and the performance of the perovskite is improved. Therefore, the photoelectric property and the stability of the perovskite material are improved. The problem that comprehensive and effective passivation cannot be achieved through a perovskite thin film passivation method in the prior art is solved.

The embodiment of the invention provides a solar cell, a manufacturing method thereof and a photovoltaic module. The solar cell comprises a substrate, a chemical passivation layer, a first aluminum oxide layer, a barrier layer and a second aluminum oxide layer. The chemical passivation layer is located on the first side of the substrate and used for passivating the surface of the substrate; the first aluminum oxide layer is located on the surface, away from the substrate, of the chemical passivation layer and used for providing hydrogen atoms to the surface of the substrate; the barrier layer is located on the surface of the first alumina layer away from the chemical passivation layer; the second aluminum oxide layer is located on the surface, away from the first aluminum oxide layer, of the barrier layer and used for field passivation of the surface of the substrate; the first aluminum oxide layer contains negative charges and has a first charge density, the second aluminum oxide layer contains negative charges and has a second charge density, and the second charge density is larger than the first charge density. The surface passivation effect of the solar cell provided by the embodiment of the invention can be improved, so that the efficiency of the solar cell is improved.

A splitting method of a solar cell comprises the steps that the solar cell is provided, the solar cell comprises an upper surface and a lower surface which are opposite to each other, and a scribing direction is set on the upper surface or the lower surface; first laser is adopted for scanning in the scribing direction, and the first laser enables the solar cell to be heated to generate pressure stress; meanwhile, cooling jet flow is sprayed in the scribing direction, the cooling jet flow enables the solar cell to be cooled to generate tensile stress, and along with movement of the first laser and the cooling jet flow, the center of the pressure stress and the center of the tensile stress do not coincide in the horizontal direction perpendicular to the scribing direction, so that the solar cell cracks in the scribing direction to form a fracture surface, and the fracture surface is formed. The section obliquely connects the upper surface and the lower surface. According to the splitting method of the solar cell, the fracture surface obliquely extends, and the method has the advantages of being smaller in roughness, free of raised grains and more thorough in edge isolation. The invention further provides a splitting and passivating method of the solar cell, the solar cell and splitting equipment.

The invention discloses a TBC battery with a locally doped back surface and a preparation method of the TBC battery, and belongs to the field of TBC batteries. Wherein a P + + heavily-doped polycrystalline silicon layer and a P + lightly-doped polycrystalline silicon layer are arranged in the P + region or an N + + heavily-doped polycrystalline silicon layer and an N + lightly-doped polycrystalline silicon layer are arranged in the N + region to form a heavily-doped region and a lightly-doped region, so that the photoelectric conversion efficiency of the TBC battery can be effectively improved, the process is relatively simple, the cost increase is less, and the control difficulty is low.

The embodiment of the invention provides a photovoltaic cell piece, a preparation method of a grid line of the photovoltaic cell piece and a photovoltaic module, the photovoltaic cell piece comprises a silicon wafer, the silicon wafer comprises a light facing surface and a backlight surface which are oppositely arranged along the thickness direction of the photovoltaic cell piece, and at least one of the light facing surface and the backlight surface is provided with the grid line; the grid line comprises a first surface and a second surface which are oppositely arranged along the thickness direction of the photovoltaic cell, and the first surface is fixedly connected with the silicon wafer; the width of the first surface is smaller than that of the second surface along the width direction of the grid line, so that the shading area of the grid line on the silicon wafer can be reduced, the filling factor, open-circuit voltage and short-circuit current of the photovoltaic cell can be improved, the metal recombination on the surface of the silicon wafer can be reduced, and the photoelectric conversion efficiency and the output power of the photovoltaic cell can be improved; and the performance of the photovoltaic cell is improved.

The invention discloses a solar single-crystal efficient TOPCon + SE battery piece ultrahigh sheet resistance diffusion process which mainly comprises a front boron process, an SE process and a rear oxidation process, and the front boron process comprises high-temperature oxidation before diffusion and a diffusion process composed of three-step diffusion and heating propulsion. According to the invention, a layer of SiO2 can be coated on the surface of the silicon wafer through high-temperature oxidation before diffusion and is used as an anti-reflection film layer; the PN junction is prepared by adopting a step-by-step diffusion method, so that the advantage of good junction uniformity can be realized, boron can be uniformly distributed on the surface of a silicon wafer through a specific boron diffusion method, and meanwhile, boron elements can be better deposited on the surface of the silicon wafer through variable-temperature diffusion and propulsion; by adding the SE process, the square resistance can reach 700-800 ohms, the junction depth in the grid line area is deeper, the increase of ohms becomes better, the cell center recombination is reduced due to the lower surface concentration, and the open-circuit voltage of the cell is improved; and the post-oxidation process has an annealing effect and can repair lattice damage and the like.

The invention relates to the field of solar cells, in particular to a preparation method of an electron transport layer and a perovskite solar cell, and the preparation method of the electron transport layer comprises the following steps: uniformly mixing stannous chloride dehydrate, an organic ligand / heterogeneous growth connecting agent and a hydrolysis rate control agent in deionized water to obtain a stannic oxide precursor solution; and taking conductive glass as a substrate to be soaked in the tin dioxide precursor solution, performing in-situ growth in a closed environment with the temperature lower than the water evaporation temperature, and then performing ultrasonic cleaning and annealing to obtain the electron transport layer. According to the in-situ chemical growth regulation and control strategy provided by the invention, the bulk phase self-doping defect control of the tin dioxide n-type thin film, the controllable regulation of the energy band and the optimization of the conductivity and the carrier extraction behavior are realized, and the strategy can be used for preparing a series of tin dioxide electron transport layers to adapt to a preparation scheme and application of a perovskite active layer with any component. And the minimization of energy loss and the optimization of interface non-radiative recombination and carrier transport behavior are realized.

The invention relates to a cadmium telluride solar cell and a preparation method thereof, the cadmium telluride solar cell comprises a TCO layer, a buffer layer, a window layer, a light absorption layer, a back electrode layer and a back contact layer, the back contact layer is located between the light absorption layer and the back electrode layer, and the back contact layer is made of boron or carbon doped transition metal nitride. The back contact layer made of boron or carbon doped transition metal nitride is introduced between the light absorption layer and the back electrode layer, and transition gold elements in the back contact layer can be compatible with the cadmium telluride absorption layer, so that the obstruction of a contact barrier to hole transport is reduced, the interface characteristic between the CdTe absorption layer and the back contact layer is optimized, and the light emitting efficiency is improved. According to the present invention, the cadmium telluride absorption layer can form the good ohmic contact with the cadmium telluride absorption layer, such that the effect of the back field buffer layer can be provided so as to reflect the photo-induced electrons on the back surface in the cadmium telluride to the PN junction, such that the recombination of the electrons on the back surface can be substantially reduced, and the carrier collection efficiency of the cell can be improved so as to improve the open-circuit voltage and the conversion efficiency of the cell;

The invention relates to the technical field of TOPCon solar cells, in particular to a TOPCon photovoltaic cell structure and a preparation method thereof, and the method comprises the steps: preparing a local patterning mask on a tunneling oxide layer through nanometer imprinting; and etching by using a high-selectivity etching agent and depositing a passivation layer, forming a local passivation structure on the polycrystalline silicon substrate, removing a mask material, depositing a polycrystalline silicon emitter layer and preparing an electrode, and forming a TOPCon photovoltaic cell structure. According to the invention, the local patterning mask is prepared on the tunneling oxide layer by using the nano imprinting technology, the high-selectivity etching solution is combined to form the local patterning structure, and finally the passivation layer material is deposited in the etched area to form the local patterning passivation layer, so that the contact interface is optimized, the recombination current between the front electrode and the silicon substrate is reduced, and the performance of the device is improved. Therefore, the open-circuit voltage and the filling factor of the cell are improved, and the photoelectric conversion efficiency is improved.

The invention relates to a method for optimizing the quality of a perovskite layer through atmosphere annealing, and belongs to the technical field of perovskite layer quality optimization, and the method comprises the steps: preparing precursor materials: taking methylamine hydrochloride, cesium iodide, formamidine iodide and lead iodide as perovskite precursor materials; the preparation method comprises the following steps: preparing a solvent: mixing N-methyl pyrrolidone with dimethylformamide; solution preparation: mixing the precursor material with a solvent to prepare a precursor solution; stirring and filtering the solution; preparing a substrate: sputtering NiO serving as a hole transport layer material on the glass substrate; blade coating of a perovskite precursor solution: uniformly blade coating the precursor solution on the glass substrate coated with the NiO film; preliminary drying; vacuum annealing preparation: placing the glass substrate coated with the perovskite precursor film in a vacuum cavity; nitrogen atmosphere filling: filling high-purity nitrogen; in the nitrogen atmosphere, the temperature in the cavity is increased to a certain temperature range, annealing is conducted at the temperature, and the optimized annealing temperature and time are selected; and cooling and packaging.

The invention provides a heterojunction cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of solar cells. The heterojunction cell comprises N-type substrate silicon; the first side surface of the N-type substrate silicon comprises a first silicon oxide layer, a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, an aluminum oxide layer, a first transparent conductive layer and a first grid line electrode which are stacked in sequence; the second side face of the N-type substrate silicon comprises a second silicon oxide layer, a second intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a third silicon oxide layer, a second transparent conductive layer and a second grid line electrode which are sequentially stacked. The first silicon oxide layer and the second silicon oxide layer are respectively combined with the corresponding intrinsic amorphous silicon to form a composite tunneling structure, so that the bottom layer interface recombination can be effectively reduced, and the open-circuit voltage of the heterojunction cell is improved; the aluminum oxide layer and the third silicon oxide layer are introduced as local passivation layers, so that the surface recombination of the heterojunction cell can be effectively reduced under the condition of thinning the silicon wafer, and the photoelectric conversion rate of the heterojunction cell is greatly improved.

The invention discloses a preparation method of a selective boron-doped P + emitter based on a low-temperature process and a battery. The preparation method comprises the following steps: (1) texturing two surfaces of a silicon substrate; (2) introducing a boron source into the surface of the silicon substrate, and simultaneously introducing water vapor to perform low-temperature BSG deposition; (3) carrying out laser boron doping on the front surface of the silicon substrate to form a selective boron-doped P + emitter; (4) carrying out oxidation treatment on the surface of the silicon substrate to obtain a silicon oxide layer; and (5) removing the BSG on the back surface of the silicon substrate, polishing the back surface, removing the low-concentration boron-doped region on the back surface, and then removing the BSG and the silicon oxide layer on the front surface to obtain the front-surface selective boron-doped P + emitter. Boron diffusion is realized through a low-temperature process, then doping is performed in cooperation with laser to form the selective P + emitter, bending and damage of the silicon wafer are avoided through low-temperature boron diffusion, limitation on thickness selection of the silicon wafer is reduced, the prepared P + emitter is the front-side selective boron-doped P + emitter, the surface recombination rate is low, and the battery efficiency can be improved.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a bottom cell, a composite layer and a top cell, the composite layer is located between the bottom cell and the top cell, the light receiving surface of the bottom cell is provided with an N-type doped layer, and the backlight surface of the top cell is provided with a hole transport layer. The composite layer comprises a first composite sub-layer and a second composite sub-layer which are arranged in a laminated manner, one surface, deviating from the second composite sub-layer, of the first composite sub-layer faces the N-type doped layer, and one surface, deviating from the first composite sub-layer, of the second composite sub-layer faces the hole transport layer; the carrier concentration of the first composite sub-layer is greater than that of the second composite sub-layer; and the resistivity of the first composite sub-layer and / or the resistivity of the second composite sub-layer is 6.5 * 10 <-4 > omega.cm to 1.6 * 10 <-2 > omega.cm, so that the open-circuit voltage and the filling factor of the solar cell are improved, and the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of organic semiconductor photoelectricity, and discloses a triphenylamine dicarboxyl-containing self-assembly hole transport material, a synthesis method and application of the triphenylamine dicarboxyl-containing self-assembly hole transport material as a photoelectric device. The triphenylamine dicarboxyl group is used as an anchoring group, and a bridging unit and a hole transport unit are introduced into a molecular structure through a self-assembly monomolecular layer strategy, so that the hole transport material containing the triphenylamine dicarboxyl group is obtained; the technical problems of poor stability, poor device performance and the like of small organic molecules with anchoring groups in the prior art can be solved. The triphenylamine dicarboxyl group is introduced into the hole transport material, so that the efficiency of a photoelectric device can be improved, the service life of the photoelectric device can be prolonged, and the hole transport material comprises a perovskite solar cell, a perovskite light-emitting diode, a quantum dot light-emitting diode and the like.

The utility model relates to an SE-TOPCon battery, and belongs to the technical field of photovoltaic battery manufacturing. Comprising a P + + region; the P + + area comprises four rectangular marks, four positioning patterns and a plurality of SE laser lines. Four rectangular marks, four positioning patterns and a plurality of SE laser lines are arranged, the SE laser lines are carved on the front face of an N-type battery silicon wafer in parallel at equal intervals, the four rectangular marks and the four positioning patterns are carved at the four corners of the front face of the N-type battery silicon wafer respectively, and the four positioning patterns are located on the inner sides of the four rectangular marks respectively. When silk-screen printing is carried out, after a silk-screen printing plate grabs four positioning patterns to carry out preliminary positioning on an N-type battery silicon wafer, a worker carries out accurate positioning according to the coverage degree of the silk-screen printing plate patterns on four rectangular marks and a plurality of SE laser lines, so that the position deviation of a plurality of metal grid lines and a plurality of SE laser lines is reduced; and the photoelectric conversion efficiency of the SE-TOPCon battery is improved.

The invention provides a crystalline silicon solar cell with high conversion efficiency and a preparation process thereof, and belongs to the technical field of solar cell preparation. The preparation process comprises the following steps: pretreating a crystal silicon wafer; preparing a bionic micro-nano composite film; preparing a composite structure on the surface of the silicon wafer; preparing the glass powder doped with the phosphorus-doped graphene; preparing a positive electrode conductive slurry; and preparing the crystalline silicon solar cell. The CuS nanocrystals / quantum dots are deposited on the surface of the bionic micro-nano composite film, the effects of antireflection, passivation and sensitization of the silicon wafer can be achieved, the photoelectric conversion efficiency of the battery is further improved, the CuS nanocrystals / quantum dots are deposited, the absorption range of the silicon wafer to the optical wavelength can be increased, and the photoelectric conversion efficiency of the battery is improved. Meanwhile, one absorbed photon can be converted into a plurality of photon-generated carriers through the CuS quantum effect, and the photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of solar cells, particularly provides a slice cell and a preparation method thereof, and aims to solve the problem that hydrogen is easy to escape in a process of forming a passive film on a slice section of an existing slice cell. In order to achieve the purpose, the preparation method of the slice battery comprises the steps that the slice battery obtained after slicing is provided, the slice battery comprises end faces adjacent to the front face and the back face, and at least one end face is a slice section; and forming a passive film on the section of the slice of the slice battery by adopting a vacuum coating mode of physical vapor deposition, wherein the deposition temperature of the passive film is 30-220 DEG C. The deposition temperature of the passive film can be controlled by adopting a vacuum coating mode of physical vapor deposition, so that the deposition temperature of the passive film is relatively low, and escape of hydrogen atoms doped in each film layer in the slice battery can be effectively reduced, so that the passivation effect of each film layer is maintained, and the open-circuit voltage of the slice battery is improved.

The invention belongs to the field of solar cells, and particularly relates to a flexible tin-lead perovskite solar cell and a preparation method thereof.A passivation solution is introduced between a tin-lead perovskite light absorption layer and an electron transport layer for passivation treatment, and due to the fact that the passivation solution contains C = O groups or-NH2, the flexible tin-lead perovskite solar cell can be applied to the field of solar cells. The coordination with Sn < 2 + > and Pb < 2 + > in the perovskite light absorption layer can be simultaneously generated, and the defects existing at the perovskite interface can be obviously passivated. Therefore, the tin-lead perovskite solar cell can play a role in inhibiting oxidation of the perovskite layer, and meanwhile, the non-radiative recombination condition of current carriers is reduced, so that the performance of the tin-lead perovskite solar cell is greatly improved.