20results about How to "Increase short circuit current" patented technology

This invention belongs to the field of back-contact battery technology, specifically relating to a back-contact battery and its battery assembly with a specific front-side structure. This specific front-side structure includes a tunneling oxide layer and a specifically doped amorphous silicon layer sequentially disposed on the front side of a silicon substrate. Within the specifically doped amorphous silicon layer, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer, and an oxygen-doped amorphous silicon layer are sequentially disposed along the direction away from the tunneling oxide layer. The specifically doped amorphous silicon layer is doped with phosphorus (P) and contains hydrogen (H). The P doping concentration C1 in the low-doped amorphous silicon layer and the P doping concentration C3 in the oxygen-doped amorphous silicon layer are both lower than the P doping concentration C2 in the high-doped amorphous silicon layer. This specific front-side structure enables the back-contact battery to achieve an absorption rate exceeding 85% for incident light within 400 nm. The back-contact battery of this invention maintains good performance even after long-term exposure to ultraviolet light, improving the battery's UV reliability while achieving high transmittance and high battery efficiency.

The application relates to the photovoltaic technical field and discloses a back contact cell and a photovoltaic module. The back contact cell comprises a silicon wafer substrate and an electrode layer arranged on the back surface of the silicon wafer substrate, and the electrode layer comprises a plurality of parallel electrode areas. Each electrode area is provided with a first grid line group and a second grid line group. The first grid line group comprises a first bus grid line extending along a first direction and a first main grid line connected with the first bus grid line, and the end point of the first main grid line is connected with a first fine grid line. The second grid line group comprises a second bus grid line extending along the first direction and a second main grid line connected with the second bus grid line, and the end point of the second main grid line is connected with a second fine grid line. The first main grid line and the second main grid line are arranged at intervals along the first direction and are staggered along a second direction, and the first fine grid line and the second fine grid line are arranged at intervals along the second direction and are staggered along the first direction. Therefore, the influence of the electric leakage channel on the whole cell is reduced, and the open-circuit voltage and the short-circuit current of the cell are improved.

A perovskite solar cell based on a non-fullerene acceptor material as a SnO2 interface modification layer and a preparation method thereof belong to the technical field of solar cells. The prepared solar cell adopts an n-i-p positive type structure of ITO / SnO2 / BDT-IC / Perovskite / Spiro-OMeTAD / Ag. In the application, a non-fullerene acceptor molecule BDT-IC based on benzodithiophene as a central core is used as an interface modification layer of the SnO2 electron transport layer, and a method for preparing a perovskite solar cell is further prepared. Using the material and device preparation method described in the application, the defects (for example, uncoordinated Pb ions) at the interface between the electron transport layer and the perovskite can be effectively passivated, the non-radiative recombination of the interface carriers is inhibited, the photovoltaic performance parameters such as open circuit voltage and short circuit current are increased, and the device performance is optimized. At the same time, the device preparation process is simplified, and the device stability is improved.

The application relates to the photovoltaic technology field, in particular to a back contact cell, a preparation method thereof, a back contact laminated cell and a photovoltaic module. The back contact cell comprises a substrate and a first passivation structure, and a first surface of the substrate is sequentially provided with a first hydrogenated amorphous silicon oxide layer, a second hydrogenated amorphous silicon oxide layer and a P-type doped layer. The oxygen doping ratio of the first hydrogenated amorphous silicon oxide layer is X1, the oxygen doping ratio of the second hydrogenated amorphous silicon oxide layer is X2, and X1 and X2 satisfy X1>X2. By arranging the laminated structure with the oxygen doping ratio gradient design, the asymmetric carrier transport channel can be formed, the blocking effect on the electrons and the transmission effect on the holes can be improved, the selective transmission of the carriers can be realized, the parasitic absorption at the interface can be reduced, the probability of the repeated absorption of the light by the substrate can be increased, the open-circuit voltage and the short-circuit current of the back contact cell can be improved, and the photoelectric conversion efficiency of the back contact cell can be improved.

The invention relates to a TOPCon battery and a preparation method thereof.According to the TOPCon battery, a singlet fission layer is arranged on an aluminum oxide passivation layer of a battery piece, high-energy singlet excitons can be generated after high-energy photons are absorbed, the high-energy singlet excitons are converted into two triplet excitons, the short-circuit current of the battery piece can be increased, meanwhile, heat loss is not caused, and the efficiency of the battery piece is improved. And the conversion rate of the battery piece can be improved. In addition, a sulfanyl compound is introduced into the pentacene singlet fission layer, so that the stability and singlet fission performance of the singlet fission layer can be improved. Besides, the ultrathin passivation layer containing hafnium oxynitride is arranged below the singlet fission layer, so that the singlet fission performance of the singlet fission layer can be promoted, and a silicon semiconductor can be prevented from being passivated.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

The application discloses a hole transport layer doped with a glycine derivative and a preparation and application method thereof. The amino group (-NH2) in the glycine salt can interact with the polar group of Me-4PACz, helping the dispersion of Me-4PACz in a solution and on a nickel oxide surface. The benzene ring contained on the selected derivative can help the electron conduction of the hole transport layer, and the halogen substituent group can change the work function of the hole transport layer, form a highest occupied molecular orbital (HOMO) energy level matched with a wide-bandgap perovskite, reduce the non-radiative recombination of a hole transport layer / perovskite interface, improve the stability of a lower interface of a perovskite active layer, and significantly improve the efficiency and stability of a wide-bandgap perovskite solar cell prepared by applying the hole transport layer material.

The invention discloses a preparation method of a solar cell and the solar cell. The preparation method of the solar cell comprises the following steps: preparing a tunneling layer on the back surface of a silicon substrate; a first N-type silicon slurry layer and a second N-type silicon slurry layer are prepared in a first region on the back surface of the tunneling layer and a second region spaced from the first region respectively, and the first N-type silicon slurry layer and the second N-type silicon slurry layer are doped with different types of doping sources respectively; annealing to convert the first N-type silicon slurry layer and the second N-type silicon slurry layer into an N-type doped polycrystalline silicon layer and a P-type doped polycrystalline silicon layer respectively; and forming a first electrode and a second electrode in the first region and the second region respectively. According to the method, the silicon slurry of different doping types is deposited in the two regions of the silicon substrate, the preparation of the N region and the P region can be completed in the annealing process, multiple times of masking and laser grooving are not needed, the preparation process of the solar cell is greatly simplified, and the production cost of the solar cell is reduced.

The application provides a printable mesoscopic perovskite solar cell and a preparation method thereof, and the solar cell has a layered structure framework. By adding an alcohol ether to a precursor solution, the permeability of the precursor solution is effectively improved, and the fill factor, short-circuit current and stability of the solar cell are significantly improved, so that the technical problem that the existing perovskite precursor is not filled sufficiently in the porous membrane framework, resulting in poor photoelectric performance, is solved.

The application is a three power source transfer switch contact assembly, which comprises a base, a cover, a first power source static contact, a second power source static contact, a third power source static contact, a load static contact and a moving contact assembly. The moving contact assembly can rotate 360 degrees clockwise and counterclockwise between the base and the cover. When the moving contact assembly rotates, there are six positions, three of which have static contacts and moving contacts in contact, corresponding to three closed positions, and three of which have no static contacts, corresponding to three open positions. The moving contact assembly is based on a rotating shaft and a moving contact shell, and two moving contacts are installed on the moving contact shell. The two moving contacts are sleeved on the moving contact shell through a spring frame, and a main spring is arranged in the middle to provide contact pressure.

The application discloses a perovskite solar cell containing a double-layer trifluoroacetate modification layer and a preparation method thereof. The perovskite solar cell comprises, from bottom to top, a conductive glass, an electron transport layer, an electron transport layer modification layer, a perovskite layer, a perovskite modification layer, a hole transport layer and an electrode; the electron transport layer modification layer and the perovskite modification layer are one of methylamine trifluoroacetate, formamidine trifluoroacetate, dimethylamine trifluoroacetate, ethylamidine trifluoroacetate, ethylenediamine trifluoroacetate and guanidine trifluoroacetate. The application simultaneously fills and modifies defects of the electron transport layer and the perovskite layer, passivates oxygen defects in the tin oxide and ion vacancies in the perovskite layer through hydrogen bonds and chemical interactions, and solves the problems of the perovskite solar cell, such as many defects in the electron transport layer and the perovskite layer, low efficiency and poor stability.

The application relates to a solar cell, a photovoltaic module and a preparation method of the solar cell. The solar cell comprises a silicon substrate, a doped semiconductor layer, a colloid layer and a current collecting electrode. The doped semiconductor layer is arranged on at least one side of the silicon substrate. The current collecting electrode is arranged on the side of the doped semiconductor layer away from the silicon substrate. The electrode extends along a first direction. The colloid layer is arranged on opposite sides of the current collecting electrode in a second direction respectively. The colloid layer covers at least part of the doped semiconductor layer. The second direction intersects the first direction. By arranging the colloid layer on the opposite sides of the current collecting electrode in the second direction, the structural stability of the solar cell can be enhanced, the surface covered by the colloid layer can be protected from mechanical damage in subsequent processes, and the electrical performance of the solar cell can be improved.

This invention discloses a perovskite thin film, a perovskite device, and a preparation method thereof. The preparation method of the perovskite thin film includes: coating a perovskite precursor solution onto a substrate to form a liquid film; removing at least a portion of the solvent from the liquid film using a vacuum process to form an intermediate phase film; and performing an annealing treatment to form the perovskite thin film; wherein the perovskite precursor solution contains an excess of A-site cations. The preparation method provided by this invention effectively compensates for the loss of A-site cations during the vacuum process, inhibits the formation of residual B-site cation salts, reduces device voltage loss, increases the grain size of the perovskite thin film, improves carrier transport and extraction, and increases the short-circuit current of the device; it is simple and easy to implement, low in cost, and requires no additional steps, making it suitable for the preparation of large-area perovskite thin films; it reduces the number of steps in perovskite device preparation, lowers material costs, and facilitates industrial development.

The application discloses a method for manufacturing photovoltaic BC cells by using inkjet printing hot melt ink, which comprises the following steps: step 1, silicon wafer pretreatment; step 2, hot melt ink preparation; step 3, inkjet printing equipment debugging; step 4, P area mask manufacturing; step 5, etching back process for manufacturing P area; step 6, removing P area mask; step 7, N area mask manufacturing; step 8, etching back process for manufacturing N area; step 9, high-temperature activation and doping optimization; and step 10, subsequent processing. The method can overcome the problems of complex process, high cost and poor mask stability in the prior art, and achieve the goals of simplifying the process, reducing the cost, improving the cell performance and production efficiency.

This invention discloses a back-contact solar cell, its fabrication method, a cell string, a cell module, and a photovoltaic system. The back-contact solar cell includes: a silicon substrate configured with a first conductivity type and including a first surface and a second surface; a first doped layer configured with the first conductivity type and located on the first surface; a second doped layer configured with the second conductivity type and located on the first surface; the first and second doped layers are alternately arranged along a first direction and extend along a second direction; the first doped layer is wavy along the second direction; and / or, the second doped layer is wavy along the second direction; a first electrode layer; and a second electrode layer. In this invention, light undergoes diffuse reflection on the wavy doped layer surface, resulting in more light being reflected back into the cell, increasing the contact area between the electrode layer and the doped layer, reducing contact resistance, and improving photoelectric conversion efficiency.

The utility model relates to the technical field of solar cells, in particular to a packaging structure which comprises a first packaging structure layer, the first packaging structure layer is provided with a plurality of through holes, and the through holes can penetrate through the upper surface and the lower surface of the first packaging structure layer. The utility model further provides a multi-layer composite solar cell panel module which is provided with a first packaging structure layer. Compared with the prior art, the stress distribution of the first packaging structure layer can be changed through the through holes, so that the stress is redistributed around the through holes, the phenomenon of stress concentration is relieved, more uniform deformation of the first packaging structure layer during bending is facilitated, local overhigh stress of the first packaging structure layer is reduced, and the reliability of the packaging structure layer is improved. Therefore, the first packaging structure layer is ensured not to be cracked or fractured due to overlarge stress in the bending process, and the condition that all layers of the solar cell panel module are not cracked or layered is ensured, so that the cell can obtain a good sealing protection effect, the use reliability of the solar cell module is improved, and the service life of the solar cell module is prolonged.

The application discloses a multifunctional additive modified inverted perovskite solar cell. The structure of the cell is composed of a bottom electrode, a hole transport layer, a modification layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a counter electrode from top to bottom. The modification layer is made of one or two of PEAI, Cl-PEAI and F-PEAI. The perovskite light absorption layer is a perovskite containing 2-hydrazinobenzothiazole modification, and the doping amount of 2-hydrazinobenzothiazole in the perovskite active layer is 0.01-10wt%. The application effectively improves the photoelectric conversion efficiency of the perovskite solar cell, exhibits excellent photoelectric conversion performance, and has a wide and good application prospect.

This invention relates to the field of solar cells, specifically disclosing a solar cell, its fabrication method, a cell module, and a photovoltaic system. The fabrication method includes: sequentially forming a first tunneling layer and a first doped layer on a silicon substrate; forming a first doped source layer on the first doped layer in a first electrode region to obtain a first intermediate; wherein the doping elements of the first doped source layer and the first doped layer have opposite polarities after doping; forming a first passivation layer on the first intermediate; printing a first electrode paste on the first passivation layer above the first electrode region to obtain a second intermediate; sintering the second intermediate; wherein, during the sintering process, the first electrode paste burns through the first passivation layer and melts the first doped source layer, thereby forming a first co-doped region within the first doped layer in the first electrode region, co-doped with the doping elements of the first doped layer, the doping elements of the first doped source layer, and the metal co-doped in the first electrode paste. Implementing this invention can improve the fill factor, short-circuit current, and conversion efficiency of solar cells.

The invention belongs to the technical field of semiconductor material preparation and new energy, and particularly discloses flexible water photovoltaic fabric based on MXene and Al2O3 and a preparation method of the flexible water photovoltaic fabric. The flexible water photovoltaic fabric based on MXene and Al2O3 comprises a flexible cotton cloth substrate, a flexible water photovoltaic fabric layer and a flexible water photovoltaic fabric layer, the functional coating is loaded on the surface of the cotton cloth fiber and in interwoven pores; the functional coating is of a graded composite structure containing Al2O3 nano particles and MXene nano sheets; wherein the Al2O3 nanoparticles are used as a water evaporation induced charge generation source; the MXene nanosheets are mutually lapped to form a three-dimensional conductive network, and the three-dimensional conductive network is used for rapidly extracting and conducting charges generated at the interface of the Al2O3 nanoparticles. The flexible water photovoltaic fabric prepared by the invention has excellent flexibility and better current output performance.

The invention relates to the technical field of solar cells, and particularly discloses a high-efficiency crystalline silicon solar cell with a composite back reflection structure and a preparation method thereof, and the high-efficiency crystalline silicon solar cell comprises a silicon substrate, and a passivation layer, a back reflection dielectric layer and a metal electrode which are sequentially formed on the back surface of the silicon substrate. Wherein the metal electrode is of a composite electrode structure and comprises a basic conductive grid line and a high-reflection covering layer. According to the invention, a base metal slurry printing and backflow or electroplating sputtering or evaporation step is added after the existing standard process, and the step is mature in process and universal in equipment. The base metal is cheap and non-toxic metal, the increased material cost is extremely low, but the brought optical, electrical and reliable benefits are remarkable, and the cost performance is high.