7results about How to "Increase short circuit current" patented technology

This invention belongs to the field of back-contact battery technology, specifically relating to a back-contact battery and its battery assembly with a specific front-side structure. This specific front-side structure includes a tunneling oxide layer and a specifically doped amorphous silicon layer sequentially disposed on the front side of a silicon substrate. Within the specifically doped amorphous silicon layer, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer, and an oxygen-doped amorphous silicon layer are sequentially disposed along the direction away from the tunneling oxide layer. The specifically doped amorphous silicon layer is doped with phosphorus (P) and contains hydrogen (H). The P doping concentration C1 in the low-doped amorphous silicon layer and the P doping concentration C3 in the oxygen-doped amorphous silicon layer are both lower than the P doping concentration C2 in the high-doped amorphous silicon layer. This specific front-side structure enables the back-contact battery to achieve an absorption rate exceeding 85% for incident light within 400 nm. The back-contact battery of this invention maintains good performance even after long-term exposure to ultraviolet light, improving the battery's UV reliability while achieving high transmittance and high battery efficiency.

The application relates to the photovoltaic technical field and discloses a back contact cell and a photovoltaic module. The back contact cell comprises a silicon wafer substrate and an electrode layer arranged on the back surface of the silicon wafer substrate, and the electrode layer comprises a plurality of parallel electrode areas. Each electrode area is provided with a first grid line group and a second grid line group. The first grid line group comprises a first bus grid line extending along a first direction and a first main grid line connected with the first bus grid line, and the end point of the first main grid line is connected with a first fine grid line. The second grid line group comprises a second bus grid line extending along the first direction and a second main grid line connected with the second bus grid line, and the end point of the second main grid line is connected with a second fine grid line. The first main grid line and the second main grid line are arranged at intervals along the first direction and are staggered along a second direction, and the first fine grid line and the second fine grid line are arranged at intervals along the second direction and are staggered along the first direction. Therefore, the influence of the electric leakage channel on the whole cell is reduced, and the open-circuit voltage and the short-circuit current of the cell are improved.

The application is a three power source transfer switch contact assembly, which comprises a base, a cover, a first power source static contact, a second power source static contact, a third power source static contact, a load static contact and a moving contact assembly. The moving contact assembly can rotate 360 degrees clockwise and counterclockwise between the base and the cover. When the moving contact assembly rotates, there are six positions, three of which have static contacts and moving contacts in contact, corresponding to three closed positions, and three of which have no static contacts, corresponding to three open positions. The moving contact assembly is based on a rotating shaft and a moving contact shell, and two moving contacts are installed on the moving contact shell. The two moving contacts are sleeved on the moving contact shell through a spring frame, and a main spring is arranged in the middle to provide contact pressure.

The application discloses a perovskite solar cell containing a double-layer trifluoroacetate modification layer and a preparation method thereof. The perovskite solar cell comprises, from bottom to top, a conductive glass, an electron transport layer, an electron transport layer modification layer, a perovskite layer, a perovskite modification layer, a hole transport layer and an electrode; the electron transport layer modification layer and the perovskite modification layer are one of methylamine trifluoroacetate, formamidine trifluoroacetate, dimethylamine trifluoroacetate, ethylamidine trifluoroacetate, ethylenediamine trifluoroacetate and guanidine trifluoroacetate. The application simultaneously fills and modifies defects of the electron transport layer and the perovskite layer, passivates oxygen defects in the tin oxide and ion vacancies in the perovskite layer through hydrogen bonds and chemical interactions, and solves the problems of the perovskite solar cell, such as many defects in the electron transport layer and the perovskite layer, low efficiency and poor stability.

This invention discloses a back-contact solar cell, its fabrication method, a cell string, a cell module, and a photovoltaic system. The back-contact solar cell includes: a silicon substrate configured with a first conductivity type and including a first surface and a second surface; a first doped layer configured with the first conductivity type and located on the first surface; a second doped layer configured with the second conductivity type and located on the first surface; the first and second doped layers are alternately arranged along a first direction and extend along a second direction; the first doped layer is wavy along the second direction; and / or, the second doped layer is wavy along the second direction; a first electrode layer; and a second electrode layer. In this invention, light undergoes diffuse reflection on the wavy doped layer surface, resulting in more light being reflected back into the cell, increasing the contact area between the electrode layer and the doped layer, reducing contact resistance, and improving photoelectric conversion efficiency.

The application discloses a multifunctional additive modified inverted perovskite solar cell. The structure of the cell is composed of a bottom electrode, a hole transport layer, a modification layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a counter electrode from top to bottom. The modification layer is made of one or two of PEAI, Cl-PEAI and F-PEAI. The perovskite light absorption layer is a perovskite containing 2-hydrazinobenzothiazole modification, and the doping amount of 2-hydrazinobenzothiazole in the perovskite active layer is 0.01-10wt%. The application effectively improves the photoelectric conversion efficiency of the perovskite solar cell, exhibits excellent photoelectric conversion performance, and has a wide and good application prospect.

The invention belongs to the technical field of semiconductor material preparation and new energy, and particularly discloses flexible water photovoltaic fabric based on MXene and Al2O3 and a preparation method of the flexible water photovoltaic fabric. The flexible water photovoltaic fabric based on MXene and Al2O3 comprises a flexible cotton cloth substrate, a flexible water photovoltaic fabric layer and a flexible water photovoltaic fabric layer, the functional coating is loaded on the surface of the cotton cloth fiber and in interwoven pores; the functional coating is of a graded composite structure containing Al2O3 nano particles and MXene nano sheets; wherein the Al2O3 nanoparticles are used as a water evaporation induced charge generation source; the MXene nanosheets are mutually lapped to form a three-dimensional conductive network, and the three-dimensional conductive network is used for rapidly extracting and conducting charges generated at the interface of the Al2O3 nanoparticles. The flexible water photovoltaic fabric prepared by the invention has excellent flexibility and better current output performance.