33results about How to "Increase short circuit current" patented technology

The invention relates to the technical field of solar cells, and particularly discloses a back contact solar cell, a cell module and a photovoltaic system, and the cell comprises a silicon substrate which is provided with a light receiving surface and a backlight surface which are opposite to each other; a doping layer and an electrode layer are sequentially arranged on the backlight face in the direction away from the light receiving face, the doping layer comprises N-type doping layers and P-type doping layers which are alternately arranged at intervals, the electrode layer comprises N-type electrodes and P-type electrodes, the electrical conductivity of the silicon substrate, the electrical conductivity of the P-type doping layers and the electrical conductivity of the N-type doping layers are sequentially increased, and the electrical conductivity of the P-type doping layers and the electrical conductivity of the N-type doping layers are sequentially increased. When the silicon substrate is a P-type silicon substrate, the total length of all the N-type electrodes is greater than the total length of all the P-type electrodes; when the silicon substrate is an N-type silicon substrate, the total length of all the P-type electrodes is larger than the total length of all the N-type electrodes. Separation of photo-generated electron hole pairs and collection of current can be enhanced, series resistance can be effectively reduced, power loss in the cell is reduced, filling factors are improved, meanwhile, the effective power generation area of the silicon substrate is increased, more photo-generated carriers are generated, short-circuit current is improved, and the conversion efficiency of the cell is effectively improved.

The invention provides a passivation contact solar cell and a photovoltaic module, the passivation contact solar cell comprises a silicon substrate, and the backlight surface of the silicon substrate comprises a first area and a third area which are arranged at an interval; in the first region, the backlight surface of the silicon substrate is sequentially provided with a dielectric layer, a first doping layer and a first passivation layer, and the dielectric layer and the first doping layer form a passivation contact structure in the first region; in the third area, the backlight surface of the silicon substrate is provided with a first passivation layer; the second area is arranged between the first area and the third area, the second area is provided with the step structure, the number of steps in the step structure is at least two, the optical loss of the passivation contact solar cell can be reduced, and therefore the photoelectric conversion efficiency of the solar cell is improved.

The invention relates to a friction nano-generator connected with an electron cloud potential well to realize high output current. A conductive network-reduced graphene oxide (rGO) capable of being connected with various dielectric polymer segment electron cloud potential wells is embedded into two dielectric layers of ethyl cellulose (EC) and polydimethylsiloxane (PDMS), wherein the electronegativity difference of the two dielectric layers is large. Results show that in the operation process of TENG, more charges can be transferred from one triboelectric material to another material. The TENG based on the model shows a recorded 3000 [mu] A high output current in a contact separation mode. In addition, the TENG shows excellent durability in a high-humidity environment, which is a huge challenge for the traditional TENG. The invention provides a novel and promising strategy for manufacturing the TENG with ultrahigh output current and water resistance, which is crucial for further development and practical application of the TENG.

The utility model relates to the field of high-voltage direct-current circuit protection, in particular to an anti-short-circuit-current direct-current contactor which comprises an electromagnetic driving mechanism, a static contact and a moving contact structure. The moving contact structure comprises a base, a U-shaped bracket movably clamped on the base, a contact spring positioned between the base and the U-shaped bracket, a U-shaped bracket, a moving contact bridge, an upper magnetizer and a lower magnetizer; the push rod is arranged on the base. The two sides of one end, facing the static contact, of the U-shaped support are fixedly connected with an upper magnetizer and an elastic piece. The movable contact bridge is located between the upper magnetizer and the lower magnetizer; the two ends of the contact spring abut against the lower magnetizer and the base respectively. An air gap is reserved between the upper magnetizer and the lower magnetizer, a gap is reserved between the U-shaped support and the base in the moving contact bridge displacement path direction, and the gap is smaller than the overtravel distance. When the switch is switched on, the gap between the U-shaped support and the base is eliminated, so that the air gap between the upper magnetizer and the lower magnetizer is minimum, and the capability of resisting short-circuit current is strongest.

This invention belongs to the field of back-contact battery technology, specifically relating to a back-contact battery and its battery assembly with a specific front-side structure. This specific front-side structure includes a tunneling oxide layer and a specifically doped amorphous silicon layer sequentially disposed on the front side of a silicon substrate. Within the specifically doped amorphous silicon layer, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer, and an oxygen-doped amorphous silicon layer are sequentially disposed along the direction away from the tunneling oxide layer. The specifically doped amorphous silicon layer is doped with phosphorus (P) and contains hydrogen (H). The P doping concentration C1 in the low-doped amorphous silicon layer and the P doping concentration C3 in the oxygen-doped amorphous silicon layer are both lower than the P doping concentration C2 in the high-doped amorphous silicon layer. This specific front-side structure enables the back-contact battery to achieve an absorption rate exceeding 85% for incident light within 400 nm. The back-contact battery of this invention maintains good performance even after long-term exposure to ultraviolet light, improving the battery's UV reliability while achieving high transmittance and high battery efficiency.

The application relates to the photovoltaic technical field and discloses a back contact cell and a photovoltaic module. The back contact cell comprises a silicon wafer substrate and an electrode layer arranged on the back surface of the silicon wafer substrate, and the electrode layer comprises a plurality of parallel electrode areas. Each electrode area is provided with a first grid line group and a second grid line group. The first grid line group comprises a first bus grid line extending along a first direction and a first main grid line connected with the first bus grid line, and the end point of the first main grid line is connected with a first fine grid line. The second grid line group comprises a second bus grid line extending along the first direction and a second main grid line connected with the second bus grid line, and the end point of the second main grid line is connected with a second fine grid line. The first main grid line and the second main grid line are arranged at intervals along the first direction and are staggered along a second direction, and the first fine grid line and the second fine grid line are arranged at intervals along the second direction and are staggered along the first direction. Therefore, the influence of the electric leakage channel on the whole cell is reduced, and the open-circuit voltage and the short-circuit current of the cell are improved.

A perovskite solar cell based on a non-fullerene acceptor material as a SnO2 interface modification layer and a preparation method thereof belong to the technical field of solar cells. The prepared solar cell adopts an n-i-p positive type structure of ITO / SnO2 / BDT-IC / Perovskite / Spiro-OMeTAD / Ag. In the application, a non-fullerene acceptor molecule BDT-IC based on benzodithiophene as a central core is used as an interface modification layer of the SnO2 electron transport layer, and a method for preparing a perovskite solar cell is further prepared. Using the material and device preparation method described in the application, the defects (for example, uncoordinated Pb ions) at the interface between the electron transport layer and the perovskite can be effectively passivated, the non-radiative recombination of the interface carriers is inhibited, the photovoltaic performance parameters such as open circuit voltage and short circuit current are increased, and the device performance is optimized. At the same time, the device preparation process is simplified, and the device stability is improved.

The invention discloses a P-type tunneling oxide passivation contact solar cell, which belongs to the technical field of crystalline silicon solar cells. The purpose is to solve the problem of poor passivation effect on the back side of solar cells in the prior art. The invention is characterized in that a silicon dioxide layer is first formed on the front side of a silicon wafer, and then an N-type heavily doped polysilicon layer is formed on the silicon dioxide layer, thereby reducing the composite loss of a metal contact area; in addition, a tunneling oxide is combined with a heavily doped silicon film to form a passivation contact structure, replacing the original entire doped back surface area, thereby maintaining a relatively high short-circuit current, increasing the open-circuit voltage, improving the fill factor, and improving the conversion efficiency of the battery.

The invention discloses a nitrogen-containing crystalline silicon shingled bifacial solar cell and a preparation method thereof, belonging to the field of crystalline silicon solar energy technology, and comprising a first silicon nitride anti-reflection layer, a p-type doping layer, an n-type silicon substrate layer, a tantalum nitride back passivation layer, and a second silicon nitride anti-reflection layer arranged from top to bottom, and a metal grid electrode layer is also arranged on the upper surface of the first silicon nitride anti-reflection layer and the lower surface of the second silicon nitride anti-reflection layer. The back of the solar cell of the invention adopts a tantalum nitride back passivation layer and a second silicon nitride anti-reflection layer, which reduces the back recombination rate of the solar cell and the reflectivity of the incident light on the back, improves the efficiency of the back cell and the short-circuit current of the back cell, and the bifaciality of the solar cell. The tantalum nitride back passivation layer not only has the ability to select electron transmission, but also can reduce the contact resistance of the back electrode printing. The above-mentioned arrangement increases the equipment utilization rate, is simple in process, manufactures a bifacial shingled solar module, increases the power generation, and reduces the production cost.

The application relates to the photovoltaic technology field, in particular to a back contact cell, a preparation method thereof, a back contact laminated cell and a photovoltaic module. The back contact cell comprises a substrate and a first passivation structure, and a first surface of the substrate is sequentially provided with a first hydrogenated amorphous silicon oxide layer, a second hydrogenated amorphous silicon oxide layer and a P-type doped layer. The oxygen doping ratio of the first hydrogenated amorphous silicon oxide layer is X1, the oxygen doping ratio of the second hydrogenated amorphous silicon oxide layer is X2, and X1 and X2 satisfy X1>X2. By arranging the laminated structure with the oxygen doping ratio gradient design, the asymmetric carrier transport channel can be formed, the blocking effect on the electrons and the transmission effect on the holes can be improved, the selective transmission of the carriers can be realized, the parasitic absorption at the interface can be reduced, the probability of the repeated absorption of the light by the substrate can be increased, the open-circuit voltage and the short-circuit current of the back contact cell can be improved, and the photoelectric conversion efficiency of the back contact cell can be improved.

The utility model relates to a gravity energy storage system with a net forming capability, which comprises a heavy object storage yard with an upper stacking area with a high potential energy position and a lower stacking area with a low potential energy position, and heavy object blocks are stacked in the heavy object storage yard; one or more weight blocks are driven between the upper stacking area and the lower stacking area through a gravity turbine, the weight blocks are connected with synchronous motors through conveying devices, and each synchronous motor is connected with a bidirectional converter; the system comprises a plurality of gravity energy storage units, wherein each gravity energy storage unit consists of a weight block, a gravity turbine, a synchronous motor and a bidirectional converter; all the gravity energy storage units are connected with a power grid through a medium-voltage transformer; all the bidirectional converters are in control connection through an energy storage coordination controller; adjustments capable of being carried out through the system comprise primary frequency modulation, inertia response and transient support, the short-circuit current level of the system can be effectively improved, and the system strength is improved.

The invention relates to a TOPCon battery and a preparation method thereof.According to the TOPCon battery, a singlet fission layer is arranged on an aluminum oxide passivation layer of a battery piece, high-energy singlet excitons can be generated after high-energy photons are absorbed, the high-energy singlet excitons are converted into two triplet excitons, the short-circuit current of the battery piece can be increased, meanwhile, heat loss is not caused, and the efficiency of the battery piece is improved. And the conversion rate of the battery piece can be improved. In addition, a sulfanyl compound is introduced into the pentacene singlet fission layer, so that the stability and singlet fission performance of the singlet fission layer can be improved. Besides, the ultrathin passivation layer containing hafnium oxynitride is arranged below the singlet fission layer, so that the singlet fission performance of the singlet fission layer can be promoted, and a silicon semiconductor can be prevented from being passivated.

The present invention provides a double-sided heterojunction solar cell and a photovoltaic module. The second doped amorphous layer located on the backlight side of a single-crystal silicon substrate in the double-sided heterojunction solar cell involved in the invention comprises a first doped amorphous silicon film located on the surface of the second intrinsic amorphous layer and a first doped amorphous silicon oxide film or a first doped amorphous silicon carbide film located on the surface of the first doped amorphous silicon film. Based on the structure, the light transmittance of the second doped amorphous layer can be improved under the premise of ensuring good contact between the second doped amorphous layer and the second intrinsic amorphous silicon layer, thereby reducing the loss of sunlight when entering the interior of the double-sided heterojunction solar cell from the backlight side, improving the short-circuit current of the double-sided heterojunction solar cell, and further optimizing the photoelectric conversion efficiency of the double-sided heterojunction solar cell while also improving the bifaciality of the double-sided heterojunction solar cell.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

The application discloses a hole transport layer doped with a glycine derivative and a preparation and application method thereof. The amino group (-NH2) in the glycine salt can interact with the polar group of Me-4PACz, helping the dispersion of Me-4PACz in a solution and on a nickel oxide surface. The benzene ring contained on the selected derivative can help the electron conduction of the hole transport layer, and the halogen substituent group can change the work function of the hole transport layer, form a highest occupied molecular orbital (HOMO) energy level matched with a wide-bandgap perovskite, reduce the non-radiative recombination of a hole transport layer / perovskite interface, improve the stability of a lower interface of a perovskite active layer, and significantly improve the efficiency and stability of a wide-bandgap perovskite solar cell prepared by applying the hole transport layer material.

The invention discloses a preparation method of a solar cell and the solar cell. The preparation method of the solar cell comprises the following steps: preparing a tunneling layer on the back surface of a silicon substrate; a first N-type silicon slurry layer and a second N-type silicon slurry layer are prepared in a first region on the back surface of the tunneling layer and a second region spaced from the first region respectively, and the first N-type silicon slurry layer and the second N-type silicon slurry layer are doped with different types of doping sources respectively; annealing to convert the first N-type silicon slurry layer and the second N-type silicon slurry layer into an N-type doped polycrystalline silicon layer and a P-type doped polycrystalline silicon layer respectively; and forming a first electrode and a second electrode in the first region and the second region respectively. According to the method, the silicon slurry of different doping types is deposited in the two regions of the silicon substrate, the preparation of the N region and the P region can be completed in the annealing process, multiple times of masking and laser grooving are not needed, the preparation process of the solar cell is greatly simplified, and the production cost of the solar cell is reduced.

The application provides a printable mesoscopic perovskite solar cell and a preparation method thereof, and the solar cell has a layered structure framework. By adding an alcohol ether to a precursor solution, the permeability of the precursor solution is effectively improved, and the fill factor, short-circuit current and stability of the solar cell are significantly improved, so that the technical problem that the existing perovskite precursor is not filled sufficiently in the porous membrane framework, resulting in poor photoelectric performance, is solved.

The application is a three power source transfer switch contact assembly, which comprises a base, a cover, a first power source static contact, a second power source static contact, a third power source static contact, a load static contact and a moving contact assembly. The moving contact assembly can rotate 360 degrees clockwise and counterclockwise between the base and the cover. When the moving contact assembly rotates, there are six positions, three of which have static contacts and moving contacts in contact, corresponding to three closed positions, and three of which have no static contacts, corresponding to three open positions. The moving contact assembly is based on a rotating shaft and a moving contact shell, and two moving contacts are installed on the moving contact shell. The two moving contacts are sleeved on the moving contact shell through a spring frame, and a main spring is arranged in the middle to provide contact pressure.

The application discloses a perovskite solar cell containing a double-layer trifluoroacetate modification layer and a preparation method thereof. The perovskite solar cell comprises, from bottom to top, a conductive glass, an electron transport layer, an electron transport layer modification layer, a perovskite layer, a perovskite modification layer, a hole transport layer and an electrode; the electron transport layer modification layer and the perovskite modification layer are one of methylamine trifluoroacetate, formamidine trifluoroacetate, dimethylamine trifluoroacetate, ethylamidine trifluoroacetate, ethylenediamine trifluoroacetate and guanidine trifluoroacetate. The application simultaneously fills and modifies defects of the electron transport layer and the perovskite layer, passivates oxygen defects in the tin oxide and ion vacancies in the perovskite layer through hydrogen bonds and chemical interactions, and solves the problems of the perovskite solar cell, such as many defects in the electron transport layer and the perovskite layer, low efficiency and poor stability.

The invention relates to the field of photovoltaic technology, and discloses a low-refraction antireflection film structure of a photovoltaic cell, a preparation method and a cell, the antireflection film structure comprises a first SiNx thin film layer, a second SiNx thin film layer, a third SiNx thin film layer and a fourth SiNx thin film layer which are sequentially deposited from bottom to top; the nitrogen-silicon ratio of the first SiNx thin film layer is 3.33; the nitrogen-silicon ratio of the second SiNx thin film layer is 6.16; the nitrogen-silicon ratio of the third SiNx thin film layer is 9.49; and the nitrogen-silicon ratio of the fourth SiNx thin film layer is 9.49. By changing the proportion of Si to N in the SiNx layer, the overall refractive index of the SiNx-SiONx-SiO2 antireflection film on the front surface of the battery can be reduced without changing the thickness of the antireflection film, so that the light absorption is increased, the short-circuit current of the battery is greatly increased, and meanwhile, the passivation performance of the battery can be kept without adjusting the thickness of the film layer, so that the service life of the battery is prolonged. And the open-circuit voltage change of the battery is small.

The application relates to a solar cell, a photovoltaic module and a preparation method of the solar cell. The solar cell comprises a silicon substrate, a doped semiconductor layer, a colloid layer and a current collecting electrode. The doped semiconductor layer is arranged on at least one side of the silicon substrate. The current collecting electrode is arranged on the side of the doped semiconductor layer away from the silicon substrate. The electrode extends along a first direction. The colloid layer is arranged on opposite sides of the current collecting electrode in a second direction respectively. The colloid layer covers at least part of the doped semiconductor layer. The second direction intersects the first direction. By arranging the colloid layer on the opposite sides of the current collecting electrode in the second direction, the structural stability of the solar cell can be enhanced, the surface covered by the colloid layer can be protected from mechanical damage in subsequent processes, and the electrical performance of the solar cell can be improved.

This invention discloses a perovskite thin film, a perovskite device, and a preparation method thereof. The preparation method of the perovskite thin film includes: coating a perovskite precursor solution onto a substrate to form a liquid film; removing at least a portion of the solvent from the liquid film using a vacuum process to form an intermediate phase film; and performing an annealing treatment to form the perovskite thin film; wherein the perovskite precursor solution contains an excess of A-site cations. The preparation method provided by this invention effectively compensates for the loss of A-site cations during the vacuum process, inhibits the formation of residual B-site cation salts, reduces device voltage loss, increases the grain size of the perovskite thin film, improves carrier transport and extraction, and increases the short-circuit current of the device; it is simple and easy to implement, low in cost, and requires no additional steps, making it suitable for the preparation of large-area perovskite thin films; it reduces the number of steps in perovskite device preparation, lowers material costs, and facilitates industrial development.

The invention provides a preparation method and application of a heterojunction cell substrate, and the method comprises the following steps: sequentially depositing an intrinsic passivation layer, a first doping layer and a silicon nitride layer on the first surface of an initial substrate, and then carrying out the annealing treatment to obtain an intermediate substrate, the refractive index of the silicon nitride layer being 1.5-2; a texturing agent is used for texturing the middle substrate, after a textured surface is formed on the second surface of the middle substrate, first cleaning treatment is carried out, then silicon nitride layer removal treatment and oxide layer removal treatment are carried out on the middle substrate, and the second surface and the first surface are oppositely arranged; and sequentially depositing an intrinsic passivation layer and a second doping layer on the surface, far away from the initial substrate, of the suede to form the heterojunction cell substrate. According to the method, the back surface of the heterojunction cell substrate has excellent flatness, meanwhile, the fragment rate of the heterojunction cell substrate is reduced, the interface passivation effect is enhanced through silicon nitride annealing and hydrogen injection, and then the short-circuit current, the open-circuit voltage, the filling factor and the photoelectric conversion efficiency of the heterojunction solar cell are improved.

The application provides a back contact solar cell, a laminated cell and a photovoltaic module. The back contact solar cell comprises: a second surface of a semiconductor substrate has a first sub-region and second sub-regions located on both sides of the first sub-region, a plurality of first texture structures are arranged in the first sub-region, a plurality of first polishing structures are arranged in the second sub-regions, the second sub-regions protrude in a direction away from the first surface relative to the first sub-region, and the distance between the second sub-regions and the bottom of the first texture structure in the first sub-region is 2-5 mu m. The second surface of the semiconductor substrate has a third sub-region and fourth sub-regions located on both sides of the third sub-region, a plurality of second texture structures are arranged in the third sub-region, a plurality of second polishing structures are arranged in the fourth sub-regions, the fourth sub-regions protrude in a direction away from the first surface relative to the third sub-region, and the distance between the fourth sub-regions and the bottom of the second texture structure in the third sub-region is 2-5 mu m.

The application discloses a method for manufacturing photovoltaic BC cells by using inkjet printing hot melt ink, which comprises the following steps: step 1, silicon wafer pretreatment; step 2, hot melt ink preparation; step 3, inkjet printing equipment debugging; step 4, P area mask manufacturing; step 5, etching back process for manufacturing P area; step 6, removing P area mask; step 7, N area mask manufacturing; step 8, etching back process for manufacturing N area; step 9, high-temperature activation and doping optimization; and step 10, subsequent processing. The method can overcome the problems of complex process, high cost and poor mask stability in the prior art, and achieve the goals of simplifying the process, reducing the cost, improving the cell performance and production efficiency.

The utility model discloses a heterojunction solar cell, and relates to the technical field of solar cells. The heterojunction solar cell provided by the utility model comprises a silicon substrate which comprises a first surface and a second surface which are opposite to each other along the thickness direction; the first passivation layer, the first doping layer, the first transparent conductive layer and the first electrode are sequentially stacked on the first surface side of the silicon substrate; the second passivation layer, the second doping layer, the second transparent conductive layer and the second electrode are sequentially stacked on the second surface side of the silicon substrate; the doping type of the second doping layer is opposite to that of the first doping layer; wherein the first surface and the second surface are different in morphology, the second doping layer comprises a plurality of sub-doping layers, and the refractive indexes of the sub-doping layers are different. The problems that a current heterojunction cell is low in double-sided rate and low in back cell efficiency can be solved at least, the back reflectivity of the cell can be reduced, and the double-sided rate and the back cell efficiency of the cell can be improved.

This invention discloses a back-contact solar cell, its fabrication method, a cell string, a cell module, and a photovoltaic system. The back-contact solar cell includes: a silicon substrate configured with a first conductivity type and including a first surface and a second surface; a first doped layer configured with the first conductivity type and located on the first surface; a second doped layer configured with the second conductivity type and located on the first surface; the first and second doped layers are alternately arranged along a first direction and extend along a second direction; the first doped layer is wavy along the second direction; and / or, the second doped layer is wavy along the second direction; a first electrode layer; and a second electrode layer. In this invention, light undergoes diffuse reflection on the wavy doped layer surface, resulting in more light being reflected back into the cell, increasing the contact area between the electrode layer and the doped layer, reducing contact resistance, and improving photoelectric conversion efficiency.

The invention provides a passivation contact structure and a preparation method thereof, a solar cell and a power utilization device, and the preparation method of the passivation contact structure comprises the following steps: providing a prefabricated structure, the prefabricated structure comprises a substrate, a first tunneling oxide layer, a first doped polycrystalline silicon material layer and a first dielectric layer which are sequentially arranged on the surface of one side of the substrate in a stacked mode, and a second tunneling oxide layer, a second doped polycrystalline silicon material layer and a second dielectric layer which are sequentially arranged on the surface of the other side of the substrate in a stacked mode. The thickness of the first doped polycrystalline silicon material layer is 120 nm-200 nm, removing the second dielectric layer in the prefabricated structure, and preparing a basic structure; first texturing treatment, modification treatment and second texturing treatment are sequentially carried out on the basic structure, the doped polycrystalline silicon layer in the passivation contact structure is in a proper range in thickness and is provided with a textured structure, the passivation advantage of the doped polycrystalline silicon layer is reserved, absorption of the doped polycrystalline silicon layer to long-wave-band light is reduced, and short-flow response is improved.

The utility model relates to the technical field of solar cells, in particular to a packaging structure which comprises a first packaging structure layer, the first packaging structure layer is provided with a plurality of through holes, and the through holes can penetrate through the upper surface and the lower surface of the first packaging structure layer. The utility model further provides a multi-layer composite solar cell panel module which is provided with a first packaging structure layer. Compared with the prior art, the stress distribution of the first packaging structure layer can be changed through the through holes, so that the stress is redistributed around the through holes, the phenomenon of stress concentration is relieved, more uniform deformation of the first packaging structure layer during bending is facilitated, local overhigh stress of the first packaging structure layer is reduced, and the reliability of the packaging structure layer is improved. Therefore, the first packaging structure layer is ensured not to be cracked or fractured due to overlarge stress in the bending process, and the condition that all layers of the solar cell panel module are not cracked or layered is ensured, so that the cell can obtain a good sealing protection effect, the use reliability of the solar cell module is improved, and the service life of the solar cell module is prolonged.

The application discloses a multifunctional additive modified inverted perovskite solar cell. The structure of the cell is composed of a bottom electrode, a hole transport layer, a modification layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a counter electrode from top to bottom. The modification layer is made of one or two of PEAI, Cl-PEAI and F-PEAI. The perovskite light absorption layer is a perovskite containing 2-hydrazinobenzothiazole modification, and the doping amount of 2-hydrazinobenzothiazole in the perovskite active layer is 0.01-10wt%. The application effectively improves the photoelectric conversion efficiency of the perovskite solar cell, exhibits excellent photoelectric conversion performance, and has a wide and good application prospect.