The invention discloses a process applied to a single-surface corroded p-n junction or suede structure of a crystalline silicon solar cell, which comprises the steps of: firstly, chemically preprocessing a silicon sheet to form a suede structure; secondly, carrying out high-temperature phosphorus diffusion or boron diffusion on the silicon sheet to form a p-n junction; thirdly, removing phosphorosilicate glass or borosilicate glass with an acid chemical liquid; fourthly, carrying out dielectric film protection on the p-n junction of a non-corroding surface of the silicon sheet; fifthly, removing a naturally oxidizing layer of a non-protecting surface, i.e. a corroding surface, or a dielectric film material of the corroding surface with the acid chemical liquid; sixthly, carrying out chemical reaction corrosion on the p-n junction or suede structure of the corroding structure by adopting an alkali chemical liquid; and finally, effectively cleaning the dielectric film on the silicon sheet and the corroding surface of the silicon sheet, and remaining the dielectric film as a functional film of the crystalline silicon solar cell. According to the invention, the process of re-preparing the functional film is avoided, the production cost of the crystalline silicon solar cell is effectively lowered, the low-cost single-surface corroded p-n junction or suede structure is realized, the open-circuit voltage and the short-circuit current of the crystalline silicon solar cell are effectively improved, and the photoelectric conversion efficiency of the cell is finally improved.