503 results about "Silicon cell" patented technology

A planar concentrator solar power module has a planar base, an aligned array of linear photovoltaic cell circuits on the base and an array of linear Fresnel lenses or linear mirrors for directing focused solar radiation on the aligned array of linear photovoltaic cell circuits. The cell circuits are mounted on a back panel which may be a metal back plate. The module includes a voltage stand-off layer and heat spreader layer. The cell circuit array may include multiple sets of cells formed by dividing planar silicon cells. The cell circuit area is less than a total area of the module. Each linear lens or linear mirror has a length greater than a length of the adjacent cell circuit. The circuit backplate is encapsulated by lamination for weather protection. The planar module is generally rectangular with alternating rows of linear cell circuits and linear lenses or linear mirrors.

Photovoltaic devices and methods of manufacture are provided. In an embodiment, the devices comprise a micro-crystal silicon cell having an amorphous silicon layer formed on the micro-crystal cell.

A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (B_xAl_1-xN) and an upper layer of GaN, for which 0.35≦x≦0.45. The BAlN forms a wurtzite-type crystal with a cell unit length about two-thirds of a silicon cell unit length on a Si(111) surface. The C-plane of the BAlN crystal has approximately one atom of boron for each two atoms of aluminum. Across the entire wafer substantially only nitrogen atoms of BAlN form bonds to the Si(111) surface, and substantially no aluminum or boron atoms of the BAlN are present in a bottom-most plane of atoms of the BAlN. A method of making the BAlN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and triethylboron and then a subsequent amount of ammonia through the chamber.

The invention discloses a parameter extraction method of a silicon cell photovoltaic assembly five-parameter model. Firstly, four electrical property parameters of a four-parameter model are obtained through parameter values provided by an assembly manufacturer nameplate, then current equation differential values of circuit current and open-circuit voltage are solved according to the values obtained through the four-parameter model and by means of an approximate solving method, and finally five parameters needed by the photovoltaic assembly five-parameter model are obtained. By means of the method, the problem that a part of needed parameters can not be directly obtained from nameplate parameters provided by a manufacturer in the parameter extraction processing of the five-parameter model in the prior art, the extraction method of the five-parameter model is further simplified, and the method can be applied to engineering practice more easily.

The invention relates to a three-step variable-temperature diffusion process for a silicon cell, which is realized by the following procedures: placing a silicon chip after etching into a boat, then rising the temperature to be 700-810 DEG C, and introducing large nitrogen, small nitrogen and oxygen to conduct low-temperature pre-deposition diffusion; subsequently rising the temperature to be 810-830 DEG C, and introducing large nitrogen to conduct knot thrusting; and then introducing large nitrogen, small nitrogen and oxygen, and rising the furnace temperature to be 830-870 DEG C to conduct secondary deposition diffusion. A multi-level PN knot structure formed after diffusion can ensure good ohmic contact with a metal gate wire on the one hand, and can have good blue response on the other hand; in addition, a PN knot formed by the method has great knot depth, and the possibility that the PN knot is burnt through, subjected to leakage of electricity and composited can be reduced.

The invention discloses an urban subsurface drainage pipeline leakage locating system and a construction method thereof. The urban subsurface drainage pipeline leakage locating system comprises a drainage pipeline, a concrete layer wrapping the outer side of the drainage pipeline, waterproof humidity detection devices, a wire pipeline and a locating and pre-warning device. The concrete layer is provided with a plurality of U-type groove-shaped waterproof layers in an embedded manner, and the open ends of the waterproof layers are in sealing connection with the drainage pipeline. The waterproof humidity detection devices are arranged in the waterproof layers in an embedded manner and used for reading humidity data, and the waterproof humidity detection devices comprise controllers, humidity sensors and wireless receiving and transmitting modules. The controllers are used for encoding the humidity sensors. A wire is arranged in the wire pipeline, one end of the wire sequentially penetrates the wire pipeline, the concrete layer and the waterproof layers to be electrically connected with the waterproof humidity detection devices, and the other end of the wire is connected with a solar silicon cell panel. The locating and pre-warning device is used for locating and pre-warning during leakage of the drainage pipeline. The controller is used for comparing codes and humidity data of the humidity sensors with pre-stored humidity data and sending comparison information and the codes to the locating and pre-warning device through the wireless receiving and transmitting modules. The urban subsurface drainage pipeline leakage locating system has the advantage of achieving real-time pre-warning and locating during leakage of the drainage pipeline.

A detector for detecting the saturation level of cerebral blood oxygen is composed of probe, synchronous amplifier, A/D converter, single-chip computer system, and display. It features that two LEDs generating different wavelengthes and two light receivers with two photoelectric silicon cells are installed in its probe. The obtained data contains two parts: one is the information about superficial tissue and another is the information about superficial tissue and cerebral blood oxygen. Subtracting one part from another can obtain the information about cerebral blood oxygen. Its advantages include simple structure, high sensitivity and reliability, and low cost.

The present disclosure includes a method and/or a computer system for modeling the performance and lifetime of a photovoltaic module (PV). The method includes preparing a comprehensive finite element model; viscoelastic modeling of the encapsulant material of the PV; and orthotropic modeling of the silicon cells of the PV. It also includes carrying out the finite element model by including the predicted time to crack initiation due to temperature; and analyzing the temperature cycling fatigue of copper interconnects in the PV module, and analyzing the PV module under variable mechanical environmental stresses including temperature and sun exposure. Meteorological data are used for modeling the variable environmental stresses.

The invention belongs to the technical field of manufacturing of crystalline silicon solar batteries, particularly relates to a printing registration method for a crystalline silicon selective emitter battery, and provides an accurate registration method aiming at a laser doped selective emitter crystalline silicon battery. The method comprises the following steps of: preparing a reducing reflection coating, and a laser doped and printing registration datum point, and performing accurate registration printing. By the method, the matching degree of a laser doped area and front silver grid line printing is greatly improved, the problem that printing registration is difficult during manufacturing of the crystalline silicon selective emitter battery is solved, the electrical performance of the crystalline silicon solar battery is improved, and the method is favorable for industrial production.

This invention discloses a process method for a silicon chip solar energy battery including the following six steps: front-channel chemical pretreatment, processing of semiconductor PN junction, etching circumference with ICP, depositing the SiN film, silk-screen printing the front and back electrodes, metallizing the front and back electrodes and burning through the SiN film, among which, AgAl pulp is applied for the printing at the Al pulp small window to ensure to get the structure of Al back field and realizes the compensation of trivalent Al to phosphor at the small window. This invention further optimizes the design to the depth of PN junction of the battery.

The invention provides a one-step wet black silicon preparation and surface treatment method, which comprises the steps of enabling a silicon wafer with a surface damage layer being removed to be immerged into a corrosive liquid so as to prepare black silicon through reaction, wherein the corrosive liquid is a mixed aqueous solution of a metal ion containing concentrated hydrofluoric acid, an oxidizing agent and a high-molecular polymer; and enabling the black silicon to be immerged into a surface treatment corrosive liquid so as to carry out surface optimization treatment, and acquiring a silicon wafer with a sub-micrometer structure and uniform texturing, wherein the surface treatment corrosive liquid is an additive containing mixed acid aqueous solution. The wet black silicon preparation method provided by the invention is simple in process and low in cost, the texturing surface of the black silicon after corrosion treatment is uniform and has no sharp boundary, and the reflectivity is 7-15%. The one-step wet black silicon preparation and surface treatment method greatly improves the absorption efficiency of a silicon cell for light, a solar cell prepared by using the black silicon prepared according to the method has low cell electric leakage rate, stable open-circuit voltage and high conversion efficiency.

A flash memory applied in NAND and/or NOR flash memory has a silicon-oxide-nitride-oxide-silicon cell structure, uses channel-hot-electron injection as a write mechanism thereof to have a localized trapping characteristic, and uses hot-hole injection as an erase mechanism thereof. The flash memory uses an oxide-nitride-oxide structure to replace a floating gate, and thereby solves the problem of an entire leakage caused by a local leakage of the floating gate. The flash memory may be miniaturized without the problem of data mutual interference, and may be easily integrated into the CMOS process to largely reduce the manufacturing cost thereof. Meanwhile, the flash memory also enables faster program time and erase time.

The invention relates to the field of a solar battery cell, and specifically discloses a laminated solar cell. The laminated solar cell comprises a top cell unit, a middle layer and a bottom unit layer which are arranged successively. The hole transport layer of the top cell unit is located on the backlight side of a photosensitive layer. The bottom cell unit is a P type silicon cell. According to the laminated solar cell, the P type silicon cell is matched with an inverted perovskite cell, the hole transport layer is located on the backlight side of the photosensitive layer, moreover, an electron transport layer is located at the light incident side of the photosensitive layer, therefore, strong absorption of the hole transport layer to light is avoided, the energy of sunlight entering the photosensitive layer is improved, and the loss of a short circuit current is reduced. Moreover, the PN of the P type silicon cell is relatively close to the light incident side, the absorption of the bottom cell to the light is improved, and the performance of the laminated solar cell is further improved. The integral cost of the laminated solar cell is reduced by use of the P type silicon cell. The invention also discloses a preparation method of the laminated solar cell.

The invention belongs to the field of solar photovoltaic industry and particularly provides a double-sided selective emitter efficient crystalline silicon cell and a preparation method thereof. The double-sided selective emitter efficient crystalline silicon cell is characterized in that a double-sided selective emitter structure is adopted, a boron-doped heavily-doped region is a polycrystallinesilicon structure in which aluminum oxide replaces silicon oxide to serve as a tunneling layer, a constant surface concentration increase fill factor (FF) exceeding 1E20atom/cm <3> can be achieved, alightly-expanded region is pure boron doping, a heavily-expanded boron doping process and a lightly-expanded boron doping process can be realized in one step, and the process is simplified. Silicon oxide is adopted as a tunneling layer for a phosphorus-doped region, a heavily-doped region is of a double-layer poly structure, the surface concentration is high, metallization contact is improved, a lightly-expanded region is of a single-layer lightly-doped poly structure, and then the open-circuit voltage (Voc) is increased. The formation of the double-sided selective emitter effectively utilizesa mask etching mode. The double-sided selective emitter efficient crystalline silicon cell is advantaged in that the structure can effectively improve battery efficiency, and is suitable for batch production.

The invention provides an auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization. The auxiliary chemical composition includes: polysaccharide or its derivative, polyol or its derivative. The preparation and use method of the auxiliary chemical composition is simple and easy to implement, and has good repeatability. When used for diamond wire-cut monocrystalline silicon or polycrystalline silicon texturization, the auxiliary chemical composition can increase the texturization temperature, and at the same time can greatly improve the surface texturization uniformity, and the prepared silicon chip has the characteristics of low reflectivity, clean surface, low fragmentation rate, and uniform color after coating, thus greatly improving the photoelectric conversion efficiency of silicon cells.

The invention relates to a preparation method for a silicon heterojunction/perovskite based double-electrode laminated solar cell. Compared with a unijunction solar cell, the laminated solar cell canutilize medium-short wave photons in the sun spectrum more effectively to achieve a higher efficiency. The laminated solar cell based on silicon heterojunction/perovskite electrodes comprises a top wide-band-gap perovskite solar cell and a narrow-band-gap silicon cell, and also comprises an anti-reflecting layer, a transparent top electrode, a protective layer, a perovskite absorbing layer, an electron transmission layer, an intermediate layer, a Si heterojunction battery and a metal electrode successively from top to bottom. The tunnel junction and perovskite absorbing layer are prepared at low temperature. The silicon heterojunction/perovskite double-electrode laminated solar cell prepared by a simple low-cost solution method can reach the efficiency of 22.22% which is in a leading position domestically.

The invention relates to the field of a solar cell, and provides a perovskite/silicon heterojunction two-end laminated solar cell. In the laminated solar cell, the cell with high open voltage and high efficiency is obtained by employing a heterojunction solar cell as a bottom cell, a perovskite solar cell as a top cell and ITO as a tunneling junction and by the matched energy level of a silicon cell and perovskite. By fabricating an intermediate protection layer on a hole transmission layer of the top cell, the laminated solar cell is prevented from being damaged by a subsequent transparent electrode, the structure is prevented from being damaged, the filling factor of the laminated solar cell is improved, and the efficiency is further improved. The preparation method for the material employed by the structure is simple and is easy to implement, and relatively good conversion efficiency can be obtained.

The invention provides an EVA heat treatment technology of a waste crystalline silicon solar cell module, and can realize the effective separation of toughened glass, crystalline silicon cell pieces and a back plate of a waste crystalline silicon solar panel. The whole process has simple operation, no EVA residue in the heat treatment process, and the generated waste gas enters into an incinerator for incineration to avoid secondary pollution. The invention adopts the heat treatment process to effectively avoid environmental pollution caused by organic solvent volatilization in the process of EVA dissolution by an organic solvent, and also greatly shortens the processing cycle.

The invention relates to the field of solar cells, and particularly discloses a tandem solar cell, which comprises a top cell unit of a perovskite cell, a bottom cell unit of a silicon cell and a middle layer located between the top cell unit and the bottom cell unit. The chemical formula for the perovskite material in the perovskite cell is: [(NH2CHNH2)1-a(CH3NH3)a]Pb[I1-xBrx]3 or [(NH2CHNH2)1-bCsb]Pb[I1-xBrx]3, and 0.3</=x</=0.5, 0.3</=a</=0.5 and 0.1</=b</=0.5. According to the above tandem solar cell, band gaps of the top perovskite cell and the bottom silicon cell are matched, the problem of current matching between top and bottom cells can be well solved, and the cell efficiency can be improved. The invention also discloses a method of manufacturing the tandem solar cell.

The invention discloses an art embossment double-glass photovoltaic component for solar energy utilization and preparation method thereof. The photovoltaic component comprises following structures: a bottom handicraft glass layer; a top solar photovoltaic glass layer; and two middle EVA sealant film layers sandwiching a crystal silicon cell. The invention further discloses the preparation method of the art embossment double-glass photovoltaic component. By adopting double-glass structure, the invention has the advantages of high impact resistance, good weathering resistance and long service life. By perfectly combining photovoltaic power generation and handicraft glass, the invention has good appearance, and can change different patterns according to personal favor, thus widening the application range of photovoltaic products.

The invention discloses a double-shaft tracking system of a solar cell panel and a tracking method thereof. The system comprises four silicon cell pieces, an X shaft stepper motor and a Y shaft stepper motor, a photoelectric tracking circuit and a single-chip microcomputer, wherein the four silicon cell pieces are symmetrically arranged at four corners of the solar cell panel, the X shaft stepper motor and the Y shaft stepper motor are used for controlling the solar cell panel to move from east to west and from north to south, the photoelectric tracking circuit is used for receiving the output voltage of the silicon cell pieces and the single-chip microcomputer is used for being respectively connected with the X shaft stepper motor and the Y shaft stepper motor; by aiming at the change of different time segments, weather conditions and solar radiation intensity in the tracking method, for the set of a circuit in the single-chip microcomputer and the set of time in a clock chip can be used, the solar cell can be started at sunrise and returned at sunset and can be coarsely adjusted by tracking the circuit by a sun motion curve; furthermore, the photoelectric tracking circuit can be precisely adjusted by judging an output range of voltage values during a sun-intense switching time scope, therefore, the accurate operation and location of the solar cell panel can be guaranteed, and the photoelectric conversion efficiency can be improved.

The invention relates to the field of solar cells and particularly relates to a tandem solar cell. The tandem solar cell sequentially comprises a top cell unit, a middle layer and a bottom cell unit, wherein a chamber transmission layer of the top cell unit is a non stoichiometri-ratio nickel oxide, and the bottom cell unit is a N-type double face silicon cell. According to the tandem solar cell, the top cell unit employs the novel chamber transmission layer, the bottom cell unit employs the N-type double face silicon cell, the top and bottom cells are made to be in matching, a short circuit current of the tandem solar cell is further improved, and thereby higher efficiency of the tandem solar cell is acquired. The invention further discloses a manufacturing method of the tandem solar cell.

The invention provides a method for preparing black silicon by a wet process. The method comprises the following steps of: soaking a silicon wafer into an additive-contained alkaline solution, and polishing the silicon wafer to remove a damaged layer on a surface of the silicon wafer; soaking the polished silicon wafer into a metal ion solution so that metal ions are adhered to the silicon wafer; soaking the silicon wafer adhered with the metal ions into a mixed solution of concentrated hydrofluoric acid and an oxidant for reaction to obtain black silicon; and soaking the black silicon into a mixed acid solution containing an additive or a slow-release agent to obtain the silicon wafer with a uniform texture surface of a sub-micrometer structure. The method is simple in process, the prepared silicon wafer has a relatively low reflectivity of 7%-15%, the absorption efficiency of a silicon cell for light is greatly improved, and thus the conversion efficiency of a solar cell is enhanced.

The invention discloses a manufacture method of a silicon solar cell electrode screen board. The manufacturing method includes the following steps: S1: preprocessing, performing preprocessing to a stainless steel sheet to be etched; S2: pasting a dry film, uniformly coating a sensitive dry film on the obtained stainless steel sheet; S3: carrying out exposure, fixing a base plate in an exposure chamber of an exposure machine and performing exposure to the dry film on the base plate by ultraviolet rays; S4: developing, performing development to the base plate subjected to exposure, dissolving and cleaning the dry film which is not subjected to exposure, and leaving an electrode screen board graph of a solar cell; and S5: etching, performing etching to the developed steel sheet to etch a position at which an opening is needed. According to the manufacture method, the whole stainless steel sheet is adopted to be etched, when the steel sheet is selected, the steel sheet with proper roughness is chosen according to the requirement of the product surface roughness, so that the surface of a manufactured mask can well meet the printing requirement, the printing precision can be well improved and the conversion efficiency of the solar cell is improved.

The invention discloses an N type underlay single leading electrode crystalline silicon battery and preparing method. The product is equipped with N+ diffuse layer, the suede surface structure, the silicon nitride film layer from the interior to the exterior on the front of the N type underlay and N+ diffuse layer on the back of the N type underlay, the N+ diffuse layer exterior of the N type underlay back is equipped with sio2 layer, the intermediate between sio2 layer and the N type underlay is equipped with p+ diffuse layer, the exterior of sio2 layer is equipped with the positive electrode and the negative electrode, the positive electrode contracts the P+ diffuse layer by the contract hole in the sio2 layer, the positive electrode contracts the N+ diffuse layer by the contract hole in the sio2 layer. The preparing method comprises the following steps: selecting the material; forming the suede surface; diffusing N+ layer; forming the passive marked sio2 layer; etching; diffusing boron; making hole on the lasing back area; removing sio2 layer on the front of silicon chip; depositing the silicon nitride film; printing positive electrode and negative electrode. The product is provided with the rational structure, the high-effective ratio, the simple process and the simple operation.

The invention discloses a crystalline silicon battery surface passive film and a manufacturing method of the crystalline silicon battery surface passive film. The crystalline silicon battery surface passive film comprises a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The silicon nitride film is deposited on the first silicon oxide film. The second silicon oxide film is deposited on the silicon oxide film. The thickness d1 of the first silicon oxide film is 10 nm-30 nm. The thickness d2 of the silicon nitride film is 30 nm-50 nm. The thickness d3 of the second silicon oxide film is 25 nm-50 nm. The probability of light full reflection is substantially increased, and namely more light enters a silicon wafer, so that more charge carriers are generated, and battery efficiency is improved.

The invention discloses a method for optimizing crystalline silicon solar cell diffusion square resistance uniformity by the aid of a high-temperature constant-temperature diffusion process route in the whole process. The method sequentially includes the steps: 1) performing oxidization by placing silicon slices into a diffusion furnace, controlling the temperature to range from 850 DEG C to 870 DEG C and leading in dry oxygen and large nitrogen for 150 seconds; 2) performing first diffusion by controlling the temperature to range from 850 DEG C to 870 DEG C and leading in dry oxygen, small nitrogen and large nitrogen for 1700 seconds; and 3) performing second diffusion by controlling the temperature at 830 DEG C and leading in large nitrogen for 150 seconds. Square resistance uniformity in a crystalline silicon cell is improved by controlling the thickness of an oxidation layer by the aid of the method. As the square resistance uniformity is improved, cell performances such as parallel resistance and cell conversion efficiency are enhanced to different degrees. The method can be continuously performed in a furnace tube, and complexity of the process and production cost cannot be increased.