213 results about "Silicon cell" patented technology

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention provides a waste photovoltaic module high-value recovery process based on pyrolysis and wet purification, which comprises the following steps: carrying out pyrolysis decarburization on a waste photovoltaic module to obtain a glass plate, a crystalline silicon battery piece and a copper-tin soldering strip; the method comprises the following steps of: performing alkaline leaching on a crystal silicon cell to obtain a dealuminized crystal silicon wafer, performing acid pickling on the dealuminized crystal silicon wafer to obtain a silver-removed crystal silicon wafer and a silver leaching solution, and extracting a silver elementary substance from the silver leaching solution; removing impurities from the silver-removed crystal silicon wafer through a hydrofluoric acid solution to obtain a high-purity crystal silicon wafer; recovering a copper strip from the copper-tin soldering strip through a high-temperature smelting reduction method; after fluorine-containing pyrolysis gas generated in the pyrolysis process is subjected to combustion and heat exchange, hydrogen fluoride is removed in a two-stage alkali liquor absorption mode, then washing is conducted, and finally obtained flue gas is discharged. According to the wet purification process, the waste crystalline silicon battery piece can be subjected to high-purity recovery, and the crystalline silicon piece, silver and copper with high purity can be obtained. The hydrogen fluoride is removed by adopting a two-stage alkali liquor absorption method, so that the treatment efficiency of the hydrogen fluoride in the pyrolysis gas is improved.

The invention provides a wet purification process suitable for silicon and precious metal of a waste photovoltaic laminated piece, which comprises the following steps of: immersing a waste crystalline silicon battery piece into a NaOH solution, and removing an aluminum wire on the surface of the crystalline silicon battery piece to obtain a dealuminized crystalline silicon piece; the dealuminated crystal silicon wafer is subjected to acid pickling, and a silver-removed crystal silicon wafer and silver leaching liquid are obtained; removing impurities from the silver-removed crystal silicon wafer through a hydrofluoric acid solution to obtain a high-purity crystal silicon wafer; and extracting the silver elementary substance from the silver leachate through a hydrazine hydrate reduction method. According to the wet purification process, the waste crystalline silicon battery piece can be subjected to high-purity recovery, and the high-purity crystalline silicon wafer and the silver elementary substance can be obtained.

The invention discloses a crystalline silicon cell module, a preparation method and a photovoltaic system, and belongs to the technical field of solar cells. The crystalline silicon battery assembly comprises a plurality of crystalline silicon battery pieces, the plurality of crystalline silicon battery pieces comprise a first crystalline silicon battery piece and a second crystalline silicon battery piece, the light facing surface of the first crystalline silicon battery piece is provided with a first connecting piece, and the backlight surface of the second crystalline silicon battery piece is provided with a second connecting piece; the first connecting piece comprises a first electrode grid line, the first electrode grid line is electrically connected with the light-facing surface of the first crystalline silicon battery piece, the second connecting piece comprises a second electrode grid line, the second electrode grid line is electrically connected with the backlight surface of the second crystalline silicon battery piece, and the first connecting piece and the second connecting piece extend in opposite directions so as to be connected with each other; and the first electrode grid line is in contact connection with the second electrode grid line. The electrode grid lines between the two crystal silicon battery pieces are directly connected, so that no welding strip is needed for connection, the shading influence caused by the welding strip can be avoided, and the power of the module is improved.

The invention belongs to the field of photovoltaic modules, and discloses a perovskite crystalline silicon laminated photovoltaic module and a preparation method thereof.The photovoltaic module comprises front plate glass, and a top cell perovskite layer, a first adhesive film layer, a bottom cell crystalline silicon cell layer, a second adhesive film layer and back plate glass are sequentially laid on one side of the front plate glass; the edges of the top cell perovskite layer, the first adhesive film layer, the bottom cell crystalline silicon cell layer and the second adhesive film layer are wrapped and sealed through a composite frame, the composite frame comprises a substrate with the wall thickness of 0.1-2mm, the surface of the substrate is provided with an anodic oxide layer with the thickness of 4-6mu m, and the surface of the anodic oxide layer is covered with a polyimide layer with the thickness of 30-1mm. The laminated photovoltaic module adopts the composite frame to replace the existing butyl rubber for sealing, so that the metalized edge sealing is perfectly fused into the low-temperature laminating process, the sealing performance is superior to that of the butyl rubber, and the service life of the laminated photovoltaic module is prolonged.

The invention provides a silicon / perovskite / GaInP three-junction laminated solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell adopts a multi-layer stacked structure and sequentially comprises a GaInP cell, a transparent conductive adhesive, a perovskite top electrode, an anti-reflection layer, a transparent conductive electrode, an electron transport layer, a perovskite layer, a hole transport layer, a silicon cell and a back electrode from top to bottom. The GaInP cell is mechanically stacked and integrated with the lower perovskite / silicon cell through the transparent conductive adhesive, spectrum splitting and current matching are completed on the premise of not depending on epitaxial growth, the solar spectrum absorption range is remarkably widened, and the photon utilization rate is improved. According to the cell structure and the preparation method provided by the invention, the perovskite / silicon / gallium indium arsenide three-junction laminated solar cell which is efficient, stable and flexible and can be prepared in a large area can be realized.

The invention belongs to the technical field of metal resource recovery and reutilization, and particularly relates to a selective recovery method for valuable metal in a retired crystalline silicon cell photovoltaic welding strip. The method comprises the following steps: disassembling a photovoltaic solder strip from a retired crystalline silicon cell, and removing impurities from the photovoltaic solder strip to obtain a clean solder strip; adding the clean welding strip into an acetic acid solution, heating and stirring to fully react, and filtering to respectively obtain filter residues, copper strips and lead-containing filtrate; adding a precipitant into the lead-containing filtrate to carry out precipitation reaction, and after the reaction is finished, carrying out solid-liquid separation, washing and drying to obtain a lead sulfate product; washing and drying filter residues to obtain a tin dioxide crude product; and washing the copper bar with absolute ethyl alcohol, and drying to obtain the metal copper bar with the purity not lower than 99.0%. The method has the advantages of high metal separation efficiency, high recovery rate, low energy consumption, low acid and alkali consumption, difficulty in causing secondary environmental pollution and the like, and provides a feasible solution for selective separation and recovery of valuable metals of retired photovoltaic modules.

The invention provides low-temperature sintered silver-copper slurry, a perovskite laminated cell and a preparation method, and belongs to the technical field of crystalline silicon cells. The low-temperature sintered silver-copper paste comprises the following components in parts by mass: 15-30 parts of silver powder; 63-77 parts by mass of silver coated copper powder; the surface of the silver-coated copper powder is coated with acrylic acid and an oleylamine coating agent; 3-15 parts by mass of a resin; 0.2 to 2.8 parts by mass of a curing agent; 0.05 to 0.5 part by mass of a leveling agent; and 0.05 to 0.5 part by mass of a dispersant. The present disclosure achieves low temperature (llt; in addition, the silver-coated copper powder and the silver powder are mixed, the silver powder is replaced with low cost, the material cost is reduced, meanwhile, the silver-coated copper powder forms a three-dimensional conductive network at the low temperature of less than 120 DEG C through metal bonding of a silver shell and contact between particles, and the high conductivity of the electrode is ensured.

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

The utility model discloses a double-sided solar crystalline silicon cell module which comprises a bottom plate and further comprises an adjusting mechanism, the top of the bottom plate is provided with the adjusting mechanism, and the adjusting mechanism comprises a supporting rod, a connecting plate, a rotating shaft A, a frame, an inserting hole, a spring A, an inserting rod, a back plate, a crystalline silicon cell piece, an EVA film, tempered glass and a polycarbonate plate. The two sides of the top of the bottom plate are both vertically and fixedly connected with supporting rods, the tops of the supporting rods are both provided with connecting plates, when a user is about to enter severe weather environments such as sand, dust, wind and snow, inserting rods can be pulled out of the surfaces of the connecting plates, then the frame is turned over along a rotating shaft A, one side of a polycarbonate plate faces upwards, a photovoltaic module on the other side is used for power generation, and although the light transmittance is reduced, the photovoltaic module is not damaged. However, the photovoltaic module has high strength and excellent impact resistance, can reduce the influence of the external environment on the photovoltaic module in the frame, protects the normal use of the photovoltaic module, adopts a double-sided structure, adapts to different working environments by different surface layers, and reduces the maintenance of the photovoltaic module.

The invention discloses a benzotriazole light conversion material, a preparation method and application of the benzotriazole light conversion material in preparation of a solar cell packaging film. When a light conversion packaging film formed based on the benzotriazole light conversion material is attached to an organic solar cell, a dye-sensitized solar cell, a crystalline silicon solar cell, a perovskite solar cell and a laminated cell composed of the perovskite cell and the crystalline silicon cell, the ultraviolet stability of the solar cell can be improved; and the power conversion efficiency of the solar cell can be maintained.

The invention belongs to the field of laminated cells, and relates to a perovskite laminated cell and a preparation method thereof, light parasitism can be reduced, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite, a first tunneling oxide layer is arranged on the first surface, and a second tunneling oxide layer is arranged on the second surface. A first passivation layer is arranged on the first tunneling oxide layer, or a first doped crystalline silicon conductive layer and the first passivation layer are arranged on the first tunneling oxide layer, and the first doped crystalline silicon conductive layer is provided with a plurality of first opening regions exposing the first tunneling oxide layer or the substrate; the first passivation layer covers the surface of the first doped crystalline silicon conductive layer and the surface of the first opening region; and the top perovskite cell is arranged on the first passivation layer and is electrically connected with the bottom crystalline silicon cell.

The invention discloses a TBC crystalline silicon cell doped on the back step by step and region and a preparation method of the TBC crystalline silicon cell. The preparation method comprises the steps that an N-type monocrystalline silicon substrate is provided, the substrate comprises a front face and a back face, annealing treatment is carried out on the back face in a partitioned and step-by-step mode, and doping activation of independent areas is carried out; preparing a textured structure with pyramid morphology on the front surface of the N-type monocrystalline silicon substrate to enhance the light trapping effect; and performing a metal slurry screen printing process on the first region and the second region, performing high-temperature sintering, forming a metal electrode in contact with the first doping layer in the first region, forming a metal electrode in contact with the second doping layer in the second region, and preparing the TBC crystalline silicon battery. According to the invention, the technical problems of incompatibility of boron and phosphorus doped region doping processes, increase of the complexity of a process route, influence on the cell performance and the like in the prior art can be solved, the open-circuit voltage and the fill factor of the cell can be effectively improved, and the photoelectric conversion efficiency of the TBC crystalline silicon cell is improved.

The invention relates to the technical field of passivation contact crystal silicon cell manufacturing, in particular to a passivation contact crystal silicon cell annealing temperature control method and system, and the method comprises the following steps: obtaining the operation parameters of an annealing furnace and the thermal load information of a silicon wafer; evaluating a response delay characteristic of the temperature control loop; on the basis of the operation parameters, the thermal load information and the response delay characteristics, predicting the transient temperature overshoot risk of the surface of the silicon wafer by using predetermined overshoot risk prediction parameters to obtain a prediction result; according to the prediction result, the heating power is adjusted before overshoot occurs; by acquiring the operating parameters of the annealing furnace and the thermal load information of the silicon wafer and evaluating the response delay characteristic of the temperature control loop, the real-time state in the hearth and the thermal response condition of the silicon wafer can be comprehensively mastered.

The application discloses a multifunctional intelligent photovoltaic window which is assembled by a multifunctional variable color unit and a silicon solar cell, and has the characteristics of wide wave adjustment, self-driving and self-cleaning. The laminated structure multifunctional variable color unit mainly comprises a vanadium dioxide / silicon dioxide / polyurethane nanocomposite film, a polymer stable liquid crystal with a near-crystal-cholesteric phase transition, an indium tin oxide and a silicon dioxide coating, which are respectively used as a near-infrared light adjusting layer, a visible light adjusting layer, an electrothermal layer and a super-hydrophobic layer. Based on the above design, the intelligent photovoltaic window can realize dynamic adjustment of the transmittance in the wavelength range of 380-2500 nm, so that the ideal energy-saving effect is achieved. In combination with the high output power of the silicon cell and the excellent direct current heating effect of the indium tin oxide, the self-driving characteristic of the intelligent photovoltaic window is realized, and the energy-saving effect is further improved. In addition, the silicon dioxide super-hydrophobic coating with a contact angle of 150-160 degrees effectively solves the environmental dependence of the intelligent photovoltaic window, and the intelligent photovoltaic window also has a good vision under complex weather conditions such as rain and snow. The application can widen the application of the intelligent photovoltaic window in the fields of energy-saving buildings, automobiles and flexible photoelectric devices.

The invention provides a method for recovering precious metal silver from an out-of-service photovoltaic module, and belongs to the field of resourceful treatment of solid waste in the photovoltaic industry. The method comprises the following steps: placing a crystalline silicon cell in the retired photovoltaic module in a protective gas atmosphere, introducing a reducing gas into the protective gas atmosphere, and carrying out heat treatment at 700-900 DEG C for 1-3 h; and stripping the silver gate electrode on the surface of the crystalline silicon battery piece after heat treatment. According to the scheme, the silver gate electrode can be separated from the crystal silicon battery piece by optimally designing the heat treatment conditions of the crystal silicon battery piece, various acidic and alkaline reagents are not needed, and the technological process is simple.

The invention discloses a recycling system and method for a photovoltaic module, and belongs to the technical field of harmless and resource treatment of retired photovoltaic modules. The recovery processing system of the photovoltaic module comprises a pyrolyzing furnace, a wet steam oxidation furnace and a cooling furnace, a discharge port of the pyrolyzing furnace is connected with a feed port of the wet steam oxidation furnace, and a discharge port of the wet steam oxidation furnace is connected with a feed port of the cooling furnace; molten salt heating pipes are arranged in the pyrolyzing furnace in the circumferential direction. The invention further provides a photovoltaic module recycling method which comprises the following steps: conveying the photovoltaic module into the pyrolyzing furnace, and staying at 450-550 DEG C for 20-40 minutes; then the photovoltaic module enters a wet steam oxidation furnace, the temperature of water vapor is 200-250 DEG C, and the photovoltaic module stays for 20-40 min; and then the photovoltaic module enters the cooling furnace to be cooled and output. The system provided by the invention can realize separation of a large complete glass plate and a high-quality silicon battery piece.

The application provides a peeling device for photovoltaic module disassembly and photovoltaic module disassembly equipment, and relates to the technical field of photovoltaic module recycling, comprising a horizontal frame, wherein a heating plate is arranged on the horizontal frame; a support beam frame is arranged above the heating plate; the support beam frame is connected with the horizontal frame through a horizontal moving assembly; a component fixing beam is arranged on the support beam frame; a tool seat and a tool seat moving unit are arranged on the component fixing beam, the tool seat moving unit drives the tool seat to move left and right along the component fixing beam, a peeling knife is fixedly connected to the tool seat; a guide knife is fixedly connected to the bottom of the component fixing beam, and the blade of the guide knife is located above the blade of the peeling knife. The photovoltaic module disassembly equipment comprises the peeling device for photovoltaic module disassembly. The peeling device for photovoltaic module disassembly can not only completely peel the crystalline silicon cell layer, but also improve the peeling speed, so that the peeling device has the advantages of good peeling effect and high peeling efficiency.

The application discloses a preparation method of a low-silver-consumption crystalline silicon cell and relates to the technical field of crystalline silicon cells, which comprises the following steps: preparing conductive silver paste, preparing carbon nanotube paste, mixing the conductive silver paste and the carbon nanotube paste to obtain low-silver-consumption paste, printing the low-silver-consumption paste on a crystalline silicon cell substrate by using a printing process to form a grid line electrode, and obtaining the low-silver-consumption crystalline silicon cell through sintering and solidification; the proportion of the conductive silver paste in the low-silver-consumption paste is 30-90 wt%, and the proportion of the carbon nanotube paste in the low-silver-consumption paste is 10-70 wt%; the printing process adopts steel plate printing, and the printing direction of the steel plate is parallel to the grid line direction. The low-silver-consumption paste is combined with the steel plate printing process and the printing mode, so that the problems in the printing process of the carbon nanotube, such as hole blockage, poor ink permeability, grid line fluctuation and the like, can be solved, the thixotropy of the paste is optimized, the plasticizing capacity of the paste in the printing process is improved, and the integrity of the grid line printing is ensured.

The invention belongs to the field of photovoltaic technology, and discloses a tunneling passivation back contact crystalline silicon cell and a preparation method thereof, and the preparation method comprises the steps: carrying out the texturing and polishing of an N-type substrate silicon wafer; sequentially depositing a first tunneling oxide layer, a first amorphous silicon layer and a first oxide layer; performing laser scanning for the first time to form a patterned first electrode area, and removing the area scanned by laser through chemical corrosion; sequentially depositing a second tunneling oxide layer, a second amorphous silicon layer and a second oxide layer in the chemically corroded region; performing second laser scanning to form a doped region and an undoped region; and forming a passivation layer and an antireflection film, and metallizing the first electrode region and the second electrode region to obtain the back contact crystalline silicon cell. According to the preparation method, on the premise that the photoelectric conversion efficiency of the cell is not reduced, the cell structure is optimized, a traditional GAP layer is removed, damage of laser to the silicon wafer is further reduced, the alkali corrosion time is shortened, and the technological process is shortened.

The invention relates to forming a local p-type polycrystalline silicon through an approach of local p-type doping followed by selective alkaline etching enabling five different crystalline silicon-based single junction and bottom structure for tandem architectures solar cells.

The invention relates to the technical field of photovoltaic cells, in particular to a back contact crystalline silicon cell and a preparation method thereof. A back contact crystalline silicon cell comprises a silicon substrate layer, a composite layer, a tunneling oxide layer, a second passivation layer, a composite doped silicon layer and a back electrode layer. A composite layer is arranged on the first surface of the silicon substrate layer; a tunneling oxide layer is arranged on the second surface; a second passivation layer is arranged on the surface of the tunneling oxide layer; a composite doped silicon layer is arranged on the surface of the second passivation layer, and the composite doped silicon layer comprises a first antimony doped layer, a phosphorus-antimony doped layer and a second antimony doped layer which are sequentially stacked in the direction from the silicon substrate layer to the second passivation layer; and a back electrode layer is arranged on the surface of the composite doped silicon layer. According to the back contact crystalline silicon cell, the contact resistivity of the back electrode can be reduced, the service life of a carrier is prolonged, accurate adaptation of the doping structure and the BC interdigital electrode is achieved, back side parasitism is reduced, the preparation process can be simplified, the cost is reduced, and the long-term reliability of the cell and the conversion efficiency of the cell are improved.

The utility model discloses a low-reflection laminated photovoltaic module, which comprises a mounting frame (1), a glass base layer (2), a crystalline silicon battery piece (13) and a back plate (14) are sequentially arranged in the mounting frame (1) along the incident direction, a first antireflection film (3) is arranged on the incident surface of the glass base layer (2), and a second antireflection film (4) is arranged on the emergent surface of the glass base layer (2). The middle part of the incident surface of the glass base layer (2) is provided with a convex arc-shaped light condensation part (5), and the periphery of the light condensation part (5) is provided with a planar reflection utilization part (6); a convex edge (7) protruding out of the surface of the first antireflection film (3) is arranged on the mounting frame (1); according to the utility model, the incident plane is enlarged through the light condensing part, the light condensing effect is realized, the reflected light on the surface can be further utilized, and the light source acquisition efficiency and the utilization rate are high.

The invention relates to a perovskite crystalline silicon laminated solar cell module and a preparation method thereof, and the preparation method comprises the steps: providing a first prefabricated member, sealing a crystalline silicon cell through a first sealing element in the first prefabricated member, fixing the crystalline silicon cell on a first cover plate, and arranging a first sub-sealing element on one side, deviating from the first cover plate, of the first sealing element; providing a second prefabricated member, wherein the second prefabricated member comprises a second sub-sealing element which covers the surface of the perovskite cell and fixes the perovskite cell on a second cover plate; and stacking the first prefabricated member and the second prefabricated member, and heating and laminating at a first preset temperature to form the solar cell module. The perovskite cell is arranged in the second prefabricated member through the second sub-sealing element, and the first prefabricated member and the second prefabricated member are stacked and hot-pressed to form the solar cell module, so that the reliability of the solar cell module is improved.

A solar cell, comprising a silicon cell main body (110), a first transparent conductive oxide layer (120), a second transparent conductive oxide layer (130), an insulating passivation layer (160), and a second electrode (150), wherein the insulating passivation layer (160) covers edges of the back face of the silicon cell main body (110), and at the edges of the back face of the silicon cell main body (110), the second transparent conductive oxide layer (130) and the first transparent conductive oxide layer (120) are arranged spaced apart from each other by means of the insulating passivation layer (160) arranged therebetween.

The invention discloses a lead-oxygen-silicon composite solid electrolyte material and a preparation method of a lead-oxygen-silicon battery, and relates to the technical field of solid-state batteries, the material comprises the following components by weight: 15-30 parts of a lead-oxygen compound; 40 to 60 parts of a mesoporous silicon substrate; 1-5 parts of a rare earth element dopant; 0.5-3 parts of an alkaline earth metal dopant; the lead-oxygen compound is compounded to serve as an ion conduction core, the rare earth element and the alkaline earth metal doping agent are matched to form a synergistic system, the ion conduction environment can be optimized, the ion migration efficiency can be improved, free lead ions can be anchored through the chemical effect, lead ion dissolution is greatly reduced, and the lead-ion conductivity is improved. The environmental protection property and the ion conduction capability are considered; and meanwhile, a hierarchical porous structure is constructed by virtue of a mesoporous silicon substrate, so that the lead oxide compound is loaded in order in a nano form, a pore channel is accurately filled with a polymer phase, a continuous and stable ion conduction path is formed, and the problems of high interface impedance and discontinuous conduction path of the traditional electrolyte are effectively solved. [1] The synergistic compounding of the rare earth element and the alkaline earth metal dopant in the patent is the core innovation point, the multi-stage material is only used as the auxiliary innovation, and when an embodiment is written, only the contrast of the core innovation point needs to be written, and the contrast does not need to be written by using the multi-stage material.

The embodiment of the present disclosure provides a solar cell, a preparation method thereof and a solar cell module. The solar cell comprises a first isolation structure, a crystalline silicon cell group and a perovskite cell structure on the crystalline silicon cell group. The crystalline silicon cell group comprises a first crystalline silicon cell structure and a second crystalline silicon cell structure arranged along a direction perpendicular to a vertical direction. The first isolation structure is used for isolating the first crystalline silicon cell structure and the second crystalline silicon cell structure. The perovskite cell structure comprises a transport layer on the crystalline silicon cell group and a perovskite light-absorbing layer on the transport layer. The transport layer comprises a hole transport layer on the first crystalline silicon cell structure and an electron transport layer on the second crystalline silicon cell structure. The first isolation structure is used for isolating the hole transport layer and the electron transport layer.

The invention discloses a photovoltaic cell and a grid line plating method thereof, a photovoltaic module and a photovoltaic system. The photovoltaic cell comprises a silicon cell; the surface of the silicon battery piece is a textured surface with a pyramid structure; the pyramid structure is provided with a conductive grid, and the conductive grid is formed by connecting metal grid lines arranged at the tip part, the seamed edge part and the bottom edge part of the pyramid structure. Metal grid lines are arranged at the positions such as the tip, the seamed edge and the bottom edge of a pyramid structure on the textured surface of a silicon battery piece, so that the metal grid lines are finally connected to form a conductive grid; damage to the silicon battery piece caused by laser mold opening is reduced, so that the opening pressure loss of the silicon battery piece is smaller, and the working performance of the photovoltaic battery piece is improved.

The application discloses a kind of high-dispersed carbon quantum dots-based light conversion film for photovoltaic and preparation method thereof, comprising: dissolving ethylenediamine in citric acid aqueous solution, adding ammonia water and stirring uniformly, adding VAE emulsion and stirring after reaction, adding dodecyl ethoxy sulfobetaine and stirring dispersion, forming C / VAE composite particle dispersion solution atomized into mist drop, vacuum air flow drying, the carbon quantum dots / VAE composite powder obtained is stirred and mixed uniformly with EVA or POE, extruding granulation through extruder to obtain carbon quantum dots / VAE / EVA or carbon quantum dots / VAE / POE composite light conversion master batch, heating in tank to form molten state flow to the upper part of base band to form wet band, gradually solidifying and cooling in drying chamber, and the solidified film is separated from the base band together or from the base band on reel for use.The application uses a new process to prepare high down-conversion, high transparency, high stability, low-cost carbon quantum dots-based light conversion film for photovoltaic, which is suitable for commonly used crystalline silicon cells on the market, such as single-crystal silicon cell, polycrystalline silicon cell, heterojunction cell, etc.

This invention discloses an environmentally friendly cascaded recycling method for silicon and silver in retired photovoltaic modules, belonging to the field of new energy solid waste resource utilization technology. The method includes the following steps: (1) removing the aluminum frame and junction box from the retired photovoltaic module and collecting metallic aluminum, copper-containing materials and laminates respectively; (2) processing the laminates to fully decompose the EVA film and separate photovoltaic glass, backsheet and silicon solar cells; (3) crushing and grinding the silicon solar cells to obtain grinding products; (4) gravity separation of the grinding products to obtain silver concentrate and silicon coarse material; (5) flotation separation of the silicon coarse material to obtain aluminum concentrate and silicon tailings. This invention adopts the method of "gravity-flotation combined separation-silver-silicon cascaded recycling". First, silver is initially enriched through gravity separation to obtain silver concentrate; then, the "float aluminum and suppress silicon" strategy is adopted and supplemented by the compound synergistic effect of dual flotation agents to achieve effective flotation separation of silicon and aluminum.