The invention discloses a
degreasing method of a
silicon nitride ceramic substrate, which belongs to the field of advanced
ceramic preparation, and comprises the following steps: in a
silicon nitride green body pre-degassing stage, heating to 140-160 DEG C; in the
silicon nitride green body pre-
decomposition stage, the temperature is increased to 230-270 DEG C, and N2 is added; in the oxygenolysis and catalytic
chain scission stage of the
silicon nitride green body, the temperature is raised to 350-400 DEG C, and the volume ratio of N2 to O2 is 97: 3-90: 10; in the
inert purification and structure relaxation stage of the
silicon nitride green body, the temperature is increased to 450-600 DEG C, and N2 is added; in a
silicon nitride green
body cooling stage, cooling to 180-220 DEG C, and adding N2; the temperature
rise rate gt of the silicon nitride green body
inert purification and structure relaxation stage; the heating rate gt of the silicon nitride green body in the pre-
decomposition stage; the temperature
rise rate gt of the oxygenolysis and catalytic
chain scission stage of the silicon nitride green body; the temperature
rise rate in the oxygenolysis and catalytic
chain scission stages of the silicon nitride green body is increased. According to the method, the
degreasing time is shortened by 40% or above, the warping rate of the green body is reduced to be smaller than or equal to 1%, the single-stack stacking amount is increased to be larger than or equal to 30 pieces, and the production efficiency and the product quality are remarkably improved.