4911results about "Logic circuit coupling/interface arrangements" patented technology

Methods for implementing familiar electronic circuits at nanoscale sizes using molecular-junction-nanowire crossbars, and nanoscale electronic circuits produced by the methods. In one embodiment of the present invention, a 3-state inverter is implemented. In a second embodiment of the present invention, two 3-state inverter circuits are combined to produce a transparent latch. The 3-state inverter circuit and transparent-latch circuit can then be used as a basis for constructing additional circuitry, including master/slave flip-flops, a transparent latch with asynchronous preset, a transparent latch with asynchronous clear, and a master/slave flip-flop with asynchronous preset. 3-state inverters can thus be used to compose latches and flip-flops, and latches and flip-flops can be used, along with additional Boolean circuitry, to compose a wide variety of useful, state-maintaining circuits, all implementable within molecular-junction-nanowire crossbars by selectively configuring junctions within the molecular-junction-nanowire crossbars.

A logic circuit combines a plurality of pass-transistor logic trees and a multiple-input logic gate for receiving intermediate logic signals from the respective pass-transistor logic trees, and can express a complex logical operation while decreasing the number of stages in pass-transistor logic trees and improving operation speed. Even a logical operation that cannot be expressed efficiently by a known or conventional pass-transistor logic circuit can be expressed efficiently with performance higher than that of a known CMOS logic circuit. Furthermore, when a static feedthrough current of the multiple-input logic gate is suppressed, power consumption can be reduced. In some embodiments, since circuitry for suppressing a static feedthrough current of the multiple-input logic gate is arranged so that a probability of occurrence of logical collision with a preceding stage will decrease or will be nil, power consumption can further be reduced.

Apparatus for transmitting a digital signal within, for example, an integrated circuit includes a signal transmission line with a directional coupler at one or both ends. The directional coupler blocks the direct-current component of the digital signal while transmitting the alternating-current component, including enough higher harmonics to transmit a well-defined pulse waveform. A suitable directional coupler consists of two adjacent line pairs in materials with different dielectric constants. The apparatus may also include a driver of the inverter type, a receiver of the differential amplifier type, a terminating resistor, and a power-ground transmission line pair for supplying power to the driver. An all-metallic transmission-line structure is preferably maintained from the output interconnections in the driver to the input interconnections in the receiver.

This disclosure uses a differential sensing and TSV timing control scheme for 3D-IC, which includes a first chip layer of the stacked device having a detecting circuits and a relative high ability driver horizontally coupled to the detecting circuits. A sensing circuit is coupled to the detecting circuits by a horizontal line, a first differential signal driver is coupled to the sensing circuit, horizontally. The Nth chip layer of the stacked device includes a Nth relative high ability driver and a Nth differential signal driver formed on the Nth chip layer. The Nth relative high ability driver is vertically coupled to the first relative high ability driver through one relative low loading TSV and (N−2) TSVs to act as dummy loadings. The TSV and (N−2) TSVs penetrate the stacked device from Nth chip layer to first chip layer. The TSV shares same configuration with the (N−2) TSVs. The Nth differential signal driver is vertically coupled to the first differential signal driver through a pair of TSVs and (N−2) pairs of TSVs, vertically. The pair of TSVs and the (N−2) TSVs penetrate the stacked device from the Nth chip layer to the first chip layer. Each of TSV is formed between a first and a second chip layers. Each of TSV is formed between any adjacent two chip layers of the stacked device.

A cross point switch, in accordance with one embodiment of the present invention, includes a plurality of tri-state repeaters coupled to form a plurality of multiplexers. Each set of corresponding tri-state repeaters in the plurality of multiplexers share a front end module such that delay through the cross point switch due to input capacitance is reduced as compared to conventional cross point switches.

A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node á rises. When the potential of the node á reaches (VDD-VthN), the node á became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105. An output at the subsequent stage is then inputted to TFTs 102 and 103 to turn the TFTs 102 and 103 ON, while the potential of the node á drops down to turn the TFT 105 OFF. A TFT 106 turns ON at the same time so that the potential of the output node would reach the level L.

A level shift circuit for shifting levels of a pair of binary input signals having a first voltage range to produce a pair of binary output signals having a second voltage range includes a first circuit to shift a level of a first one of the binary input signals thereby to produce a first signal having the second voltage range, a second circuit to shift a level of a second one of the binary input signals thereby to produce a second signal having the second voltage range, and a timing adjustment circuit to produce the binary output signals by adjusting a pulse width thereof in response to the first and second signals such that the pulse width is equal to a time interval from when one of the first and second circuits stops level shift operation to when another one of the first and second circuits stops level shift operation.

A level shift circuit includes an input stage and an output stage coupled to each other by two nodes. The input stage changes the voltages on the nodes according to an input signal, and the output stage determines an output signal according to the voltages on the two nodes. In a transition state, the input stage provides a large current to charge or discharge the first node or the second node so as to quickly change the voltage thereon. In a steady state, the input stage lowers the current so as to reduce power consumption.

To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply potential VDD is supplied to the first wiring and the power supply potential VSS is supplied to the second wiring. A binary digital signal is supplied to each of the third wiring and the fourth wiring. An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. There are four combinations of the potentials of the third wiring and the fourth wiring. Each of the first transistor to the fourth transistor can be turned off by any combination of the potentials. That is, since there is no transistor that is constantly on, deterioration of the characteristics of the transistors can be suppressed.

A semiconductor circuit or a MOS-DRAM wherein converting means is provided that converts substrate potential or body bias potential between two values for MOS-FETs in a logic circuit, memory cells, and operating circuit of the MOS-DRAM, thereby raising the threshold voltage of the MOS-FETs when in the standby state and lowering it when in active state. The converting means includes a level shift circuit and a switch circuit. The substrate potential or body bias potential is controlled only of the MOS-FETs which are nonconducting in the standby state; this configuration achieves a reduction in power consumption associated with the potential switching. Furthermore, in a structure where MOS-FETs of the same conductivity type are formed adjacent to each other, MOS-FETs of SOI structure are preferable for better results.

A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD−V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD. When SP becomes low level; CK3 becomes low level; and CK1 becomes high level, the potential at the signal output section (Out) becomes low level again.

Detection and deterrence of device tampering and subversion by substitution may be achieved by including a cryptographic unit within a computing device for binding multiple hardware devices and mutually authenticating the devices. The cryptographic unit includes a physically unclonable function (“PUF”) circuit disposed in or on the hardware device, which generates a binding PUF value. The cryptographic unit uses the binding PUF value during an enrollment phase and subsequent authentication phases. During a subsequent authentication phase, the cryptographic unit uses the binding PUF values of the multiple hardware devices to generate a challenge to send to the other device, and to verify a challenge received from the other device to mutually authenticate the hardware devices.

A driver for a power converter, method of driving a switch thereof, and a power converter employing the same. In one embodiment, the driver includes switching circuitry referenced to a voltage level and configured to provide a drive signal for a switch referenced to another voltage level and subject to a control voltage limit. In a related, but alternative embodiment, the driver is employable with a power converter couplable to a source of electrical power adapted to provide an input voltage thereto. The power converter includes a power train having a switch referenced to the input voltage and subject to a control voltage limit. The driver includes switching circuitry referenced to a voltage level different from the input voltage and configured to provide a drive signal for the switch within the control voltage limit of the switch.

In a source follower circuit having an NMOS source follower transistor with a drain thereof connected to a power supply and a current supply connected across the source of this transistor and earth, one end of a capacitor is connected to the gate of the transistor, the first analog switch is connected across the gate of the transistor and a precharge supply, the second analog switch is connected across the other end of the capacitor and the source of the transistor, and the third analog switch is connected across the other end of the capacitor and a signal source.

In a semiconductor integrated circuit, a control transistor 4 and a potential clamp circuit 9 are arranged between a power supply line 2 and a virtual power supply line 3. Even in a sleeve mode where the control transistor 4 is turned off, the potential clamp circuit 9-1 clamps the virtual power supply line 3 at a certain potential to hold a potential state (high level or low level) of each node of a logical circuit. At this time, each FET forming the logical circuit is applied with a back bias so that a threshold voltage Vt becomes higher than that in an active mode. Therefore, a leakage current can be decreased. In the semiconductor integrated circuit, the threshold voltage Vt of the control transistor 4 can be selected to be equal to that of one FET of the complementary FET forming the logical circuit. Therefore, the layout area and the number of manufacturing steps can be reduced.

A circuit capable of reducing a consumption current is provided for a digital display device composed of unipolar TFTs. There is provided a latch circuit for holding a digital video signal. According to the latch circuit, when the digital video signal is inputted to an input electrode of a TFT (101), a non-inverting output signal is outputted from an output electrode of the TFT (101) and an inverting output signal is outputted from output electrodes of TFTs (102 and 103). Two line outputs of non-inversion and inversion are obtained. Thus, when a buffer located in a subsequent stage is operated, a period for which a direct current path is produced between a high potential and a low potential of a power source can be shortened, thereby contributing to reduction in a consumption current.