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30results about How to "Improve signal transmission speed" patented technology

Differential sensing and TSV timing control scheme for 3D-IC

This disclosure uses a differential sensing and TSV timing control scheme for 3D-IC, which includes a first chip layer of the stacked device having a detecting circuits and a relative high ability driver horizontally coupled to the detecting circuits. A sensing circuit is coupled to the detecting circuits by a horizontal line, a first differential signal driver is coupled to the sensing circuit, horizontally. The Nth chip layer of the stacked device includes a Nth relative high ability driver and a Nth differential signal driver formed on the Nth chip layer. The Nth relative high ability driver is vertically coupled to the first relative high ability driver through one relative low loading TSV and (N−2) TSVs to act as dummy loadings. The TSV and (N−2) TSVs penetrate the stacked device from Nth chip layer to first chip layer. The TSV shares same configuration with the (N−2) TSVs. The Nth differential signal driver is vertically coupled to the first differential signal driver through a pair of TSVs and (N−2) pairs of TSVs, vertically. The pair of TSVs and the (N−2) TSVs penetrate the stacked device from the Nth chip layer to the first chip layer. Each of TSV is formed between a first and a second chip layers. Each of TSV is formed between any adjacent two chip layers of the stacked device.
Owner:NATIONAL TSING HUA UNIVERSITY

Semiconductor package and method of manufacturing the same

The present invention relates to a semiconductor package and a method of manufacturing the same. The semiconductor package may include: an insulator that has first and second opening parts; an active element that is disposed inside the first opening part; a passive element that is disposed inside the second opening part; a protective member that is disposed at a lower part of the insulator and covers a lower part of the passive element; a build-up layer that is disposed on the insulator and electrically connected to the active element; and an external connection unit that is electrically connected to the build-up layer.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD

Method and device for monitoring power transmission line

The invention relates to monitoring technology of power transmission lines, in particular to technology for monitoring ice coating and waving states of the power transmission lines. The invention discloses a method and a device for monitoring the power transmission line by using fiber sensors in real time. The method for monitoring the power transmission line is characterized by comprising the following steps: arranging the fiber sensors along the power transmission line to detect characteristic parameters of different positions of a lead; and judging the state of the power transmission line according to the analysis of the characteristic parameters. The device for monitoring the power transmission line comprises the fiber sensors and a signal transmitting and processing system, and is characterized in that the fiber sensors are arranged along the length direction of the power transmission line and used for detecting and transmitting the characteristic parameters of the different positions of the power transmission line. The method and the device are used for monitoring the ice coating and waving states of the power transmission lines, can fully exert the advantages of the fiber sensors to carry out multi-parameter real-time on-line detection, and have the characteristics that the device has long service life and can work for long time reliably under on-site severe environment conditions.
Owner:SICHUAN HUIYUAN OPTICAL COMM CO LTD

Semiconductor devices and methods of fabricating the same

A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.
Owner:SAMSUNG ELECTRONICS CO LTD

Semiconductor device and method for manufacturing same

There is provided a semiconductor device of a chip-on-chip structure having a support semiconductor chip, first and second chip blocks supported and connected on one surface of the support semiconductor chip and an insulator arranged between the first and second chip blocks. The first and second chip blocks each include one or a plurality of semiconductor chips having an active surface nearly parallel with the one surface of the support semiconductor chip. Within the insulator, an intralevel wiring is arranged on a wiring plane as a plane including an inactive or active surface of any of the semiconductor chips structuring the first or second chip block.
Owner:ACHLYS TECH INC

On-chip optical interconnection circuit, electro-optical device, and electronic apparatus

To provide an on-chip optical interconnection circuit, an electro-optical device, and an electronic apparatus, in which high signal transmission speed, easy miniaturization, and easy fabrication can be attained, there are provided a plurality of circuit blocks, which are provided on one integrated circuit chip, and an optical waveguide, which is provided on the integrated circuit chip to optically connect the circuit blocks to each other.
Owner:SEIKO EPSON CORP

Multi-chip package with improved signal transmission

Provided is an MCP including a plurality chips stacked therein. Each of the chips includes a plurality of inductor pads configured to transmit power or signals, and at both sides of a reference inductor pad, a first and a second inductor pads are formed to generate magnetic fluxes in different directions from each other.
Owner:SK HYNIX INC

PCB manufacturing method

The invention discloses a PCB manufacturing method, comprising the following steps: S10. Providing an inner-layer core plate to be holed and forming avoidance holes in the inner-layer core plate to be holed; S20, making adhesive blocking projections on the end faces of the inner-layer core plate to be holed and at the edges of the avoidance holes; S30, providing an hole-less core plate and a prepreg and laminating the hole-less core plate, the prepreg and the inner-layer core plate to be holed to form a laminated plate having a closed cavity. According to the scheme provided by the invention, since the adhesive blocking projections are formed at the edges of the avoidance holes, adhesive flowing inside the closed cavity can be controlled effectively and the complete shape of the inner wall can be ensured; moreover, the application of high-frequency high-speed material to the PCB having a closed cavity can be expanded and the signal transmission quality and speed can be enhanced.
Owner:DONGGUAN SHENGYI ELECTRONICS

Manufacturing method of multilayer flexible circuit board and manufactured product

The invention discloses a manufacturing method of a multilayer flexible circuit board. The manufacturing method comprises the steps of (1) manufacturing a double-sided FPC flexible board; (2) manufacturing a novel material layer structure; (3) hot-pressing at least one group of novel material layer structures on the circuit on the upper surface and / or the lower surface of the double-sided FPC flexible board, and forming a protective layer on the circuit of the outermost novel material layer structure and / or the exposed circuit of the double-sided FPC flexible board to obtain the multi-layer flexible circuit board. The invention further discloses a multi-layer flexible circuit board manufactured by implementing the method. According to the invention, the manufacturing process is simplifiedand convenient, and the production efficiency is high; the manufactured multi-layer flexible circuit board not only greatly simplifies the novel material layer structure and reduces the overall thickness, but also has the function of transmitting high-frequency signals at a high speed, and is particularly suitable for novel 5G technological products; the protective and resistant effects on the copper ion migration phenomenon during the electrification between the circuits are achieved, and the safe and normal work of the circuits is guaranteed.
Owner:李龙凯

Automatic reeling machine exploration perception mechanism

ActiveCN109554767AShorten the exploration cycleReduce control lag timeSilk reelingConverting sensor output electrically/magnetically
The invention discloses an automatic reeling machine exploration perception mechanism which a first support, a second support, a stepping motor, a sensing arm, a crank rocker mechanism, an explorationdrum wheel, a first hall sensor, a second hall sensor, a short lever gauge fixed fiber sensor, a denier sensor seat, a controller and an upper positioning drum wheel, wherein the first support and the second support relatively fixed. The stepping motor serves as a power source of exploration movement, mechanical signals of the short lever gauge fixed fiber sensor are converted into electric signals by the hall sensors, exploration the perception of raw silk size is completed, and raw silk size signals are processed. The mechanism is characterized in that the explore cycles can be changed in real time according to detection results of raw silks, so that fine lengths of raw silks can be reduced as far as possible, the quality of the raw silks is improved, the mechanical signals of the shortlever gauge fixed fiber sensor are converted into the electric signals, signal transmission speed is greatly improved, and relevant parameters of reeled raw silks are conveniently counted.
Owner:ZHEJIANG SCI-TECH UNIV

Method and device for monitoring power transmission line

The invention relates to monitoring technology of power transmission lines, in particular to technology for monitoring ice coating and waving states of the power transmission lines. The invention discloses a method and a device for monitoring the power transmission line by using fiber sensors in real time. The method for monitoring the power transmission line is characterized by comprising the following steps: arranging the fiber sensors along the power transmission line to detect characteristic parameters of different positions of a lead; and judging the state of the power transmission line according to the analysis of the characteristic parameters. The device for monitoring the power transmission line comprises the fiber sensors and a signal transmitting and processing system, and is characterized in that the fiber sensors are arranged along the length direction of the power transmission line and used for detecting and transmitting the characteristic parameters of the different positions of the power transmission line. The method and the device are used for monitoring the ice coating and waving states of the power transmission lines, can fully exert the advantages of the fiber sensors to carry out multi-parameter real-time on-line detection, and have the characteristics that the device has long service life and can work for long time reliably under on-site severe environmentconditions.
Owner:SICHUAN HUIYUAN OPTICAL COMM CO LTD

PSD-based robot arm leveling and locating system

The invention provides a PSD-based robot arm leveling and locating system comprising a high-precision automatic leveling line laser, a high-precision PSD module and a circuit module. A laser ray serves as the datum line of the PSD-based robot arm leveling and locating system provided by the invention, then the PSD-based robot arm leveling and locating system is matched with three PSD units to be used, PSDs can read the position coordinates of light spots formed by crossing of the ray and the PSDs through the circuit module, the accurate deflection direction and angle of a robot arm can be judged according to the coordinate values on the three PSDs, and 10-m precision can be smaller than 0.1 mm. A signal communication circuit is arranged and adopts RS485 communication, the speed can reach 100 hz or above, the signal transmission speed is increased greatly, thus the leveling and locating speed of the PSD-based robot arm leveling and locating system is further promoted, modulation light is adopted for a light source from the high-precision automatic leveling line laser, interference of external background light is avoided effectively, and then overall precision of the PSD-based robotarm leveling and locating system is improved.
Owner:深圳达瑞鑫光电科技有限公司

VHF signal efficient and stable communication circuit

The invention provides a VHF signal efficient and stable communication circuit, which comprises a signal input port, a power amplification circuit, a low-pass filter circuit, a fixed coupling circuit, a transceiving switch circuit and an antenna which are successively connected, a signal receiving port and a control circuit. The fixed coupling circuit comprises a double-core wire fixed coupling module; the double-core wire fixed coupling module comprises a double-core cable WT1 and a double-core cable WT2; the low-pass filter circuit is connected with the transceiving switch circuit through a first cable of a double-core cable WT1 and a first cable of a double-core cable WT2 which are connected in sequence; and the second cable of the double-core cable WT1 and the second cable of the double-core cable WT2 are respectively connected with the control circuit through two band-pass filtering processing modules which are used for carrying out band-pass filtering on the coupling signals in different frequency bands. According to the communication circuit, the signal transmission speed can be increased, the energy consumption can be reduced, the fixed coupling detection accuracy can be improved, and the output stability can be improved.
Owner:GUANGDONG KUANPU TECH CO LTD

A kind of range matching cam unit circuit and rcam memory composed of it

ActiveCN103778957BImprove noise immunityIncreased High Voltage SwingDigital storageTransmission gateEngineering
The invention relates to the technical field of manufacturing of integrated circuits and provides a range matching CAM (Content Addressable Memory) unit circuit and an RCAM (Range Content Addressable Memory) composed of the range matching CAM unit circuit. According to the range matching CAM unit circuit, high-voltage swing is greater than a GERMC circuit in a range matching unit; a fifth NMOS (N-channel Metal Oxide Semiconductor) tube is in complementary combination with an MP1 of a first PMOS (P-channel Metal Oxide Semiconductor) tube; a grid electrode of the MP1 is connected with a D# end; a source electrode of the MP1 is connected with a third input SL; an MN6 of a sixth NMOS tube is in the complementary combination with an MP2 of a second PMOS tube; a grid electrode of the MP2 is connected with a D end; a source electrode of the MP2 is connected with a fourth input SL#; a node connected between the two combined tubes which are mutually connected in series is connected with the grid electrodes of an MN1 and an MN2 of a first NMOS tube and a second NMOS tube; a drain electrode of an MN3 of a third NMOS tube is connected with a second input GE path, and the grid electrode of the MN3 of the third NMOS tube is connected with the D# end. According to the range matching CAM unit circuit and the RCAM, the two PMOS tubes are introduced to change transmission tubes MN5 and MN6 into transmission gates so that the P-point voltage swing is improved and the voltage drain drain VDD can be reached, so that the transmission speeds of signals equal to a chain or greater than the chain are increased and the circuit speed is increased; meanwhile, the robustness of the unit circuit is also improved and the anti-noise capability is improved.
Owner:DALIAN UNIV OF TECH

Solder ball arrangement unit and packaging chip

The invention provides a solder ball arrangement unit and a packaging chip. The solder ball arrangement unit comprises a first signal solder ball pair and a second signal solder ball pair which are vertically arranged, and a plurality of grounding solder balls disposed around the first signal solder ball pair and the second signal solder ball pair, wherein the first signal solder ball pair comprises two first signal solder balls arranged at an interval along a first direction, the second signal solder ball pair comprises two second signal solder balls arranged at an interval along a directionvertical to the first direction, and the projections of the first signal solder balls along the first direction fall into the interval between the two second differential signal solder balls. Throughthe above mode, the crosstalk between the solder ball arrangement units in the packaged chip is small, the signal transmission speed is increased, the solder ball density in the prepared chip is improved, the chip area is small, and the preparation of a microchip is facilitated.
Owner:SHENZHEN PANGO MICROSYST CO LTD

Drive device

The invention discloses a driving device. The driving device comprises a first complementary metal-oxide-semiconductor circuit and a first comparator, the first complementary metal-oxide-semiconductor circuit is used for outputting a power signal or a pull-down signal according to a first input signal. The first comparator comprises a first non-inverting input end and a first inverting input end. The first non-inverted input end is coupled to the first complementary metal-oxide-semiconductor circuit and is used for receiving a power supply signal or a pull-down signal. The first reverse input end is used for receiving a first reference signal. The first comparator is used for comparing one of the power supply signal and the pull-down signal with the first reference signal to provide a first driving signal.
Owner:AU OPTRONICS CORP

Display panel and method of fabricating the same

A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
Owner:SAMSUNG DISPLAY CO LTD

Display panel and method of fabricating the same

A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
Owner:SAMSUNG DISPLAY CO LTD

Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit

ActiveCN103778957AImprove noise immunityIncreased High Voltage SwingDigital storageTransmission gateHemt circuits
The invention relates to the technical field of manufacturing of integrated circuits and provides a range matching CAM (Content Addressable Memory) unit circuit and an RCAM (Range Content Addressable Memory) composed of the range matching CAM unit circuit. According to the range matching CAM unit circuit, high-voltage swing is greater than a GERMC circuit in a range matching unit; a fifth NMOS (N-channel Metal Oxide Semiconductor) tube is in complementary combination with an MP1 of a first PMOS (P-channel Metal Oxide Semiconductor) tube; a grid electrode of the MP1 is connected with a D# end; a source electrode of the MP1 is connected with a third input SL; an MN6 of a sixth NMOS tube is in the complementary combination with an MP2 of a second PMOS tube; a grid electrode of the MP2 is connected with a D end; a source electrode of the MP2 is connected with a fourth input SL#; a node connected between the two combined tubes which are mutually connected in series is connected with the grid electrodes of an MN1 and an MN2 of a first NMOS tube and a second NMOS tube; a drain electrode of an MN3 of a third NMOS tube is connected with a second input GE path, and the grid electrode of the MN3 of the third NMOS tube is connected with the D# end. According to the range matching CAM unit circuit and the RCAM, the two PMOS tubes are introduced to change transmission tubes MN5 and MN6 into transmission gates so that the P-point voltage swing is improved and the voltage drain drain VDD can be reached, so that the transmission speeds of signals equal to a chain or greater than the chain are increased and the circuit speed is increased; meanwhile, the robustness of the unit circuit is also improved and the anti-noise capability is improved.
Owner:DALIAN UNIV OF TECH

Semiconductor devices and methods of fabricating the same

A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.
Owner:SAMSUNG ELECTRONICS CO LTD

Device for generating a bit line selection signal of a memory device

The device for generating the bit line signal to enable a column transistor that is connected to a bit line and a local line in a semiconductor memory device includes at least a column decoder and a chain of connected inverters. The column decoder decodes a column address signal. The chain of connected inverters has an input terminal for receiving a first signal outputted from the column decoder and an output terminal for outputting a second signal to drive the column transistor. The second signal voltage is held substantially same as the first signal voltage for a predetermined time. After the predetermined time, the second signal voltage is held at a higher voltage than the first signal voltage to improve the current driving capacity of the column transistor. This increases the transmission speed of the signal transmitted from the bit line to the local input / output line.
Owner:INTELLECTUAL DISCOVERY CO LTD

Device for generating a bit line selection signal of a memory device

The device for generating the bit line signal to enable a column transistor that is connected to a bit line and a local line in a semiconductor memory device includes at least a column decoder and a chain of connected inverters. The column decoder decodes a column address signal. The chain of connected inverters has an input terminal for receiving a first signal outputted from the column decoder and an output terminal for outputting a second signal to drive the column transistor. The second signal voltage is held substantially same as the first signal voltage for a predetermined time. After the predetermined time, the second signal voltage is held at a higher voltage than the first signal voltage to improve the current driving capacity of the column transistor. This increases the transmission speed of the signal transmitted from the bit line to the local input / output line.
Owner:INTELLECTUAL DISCOVERY CO LTD
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