Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit
A unit circuit and matching unit technology, which is applied in the field of interval matching CAM unit circuits and the RCAM memory composed of them, can solve the problems of poor circuit anti-noise ability and limited circuit speed, etc. Effects of Voltage Swing
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[0039] The present invention will be further described below in conjunction with the drawings.
[0040] Such as figure 1 As shown, the drain of the third NMOS transistor MN3 in the greater-than-interval matching unit GERMC circuit is connected to the second input GE path, and its gate is connected to the D# terminal. The D# terminal is the logic negation of the D terminal, and the third NMOS The source of the tube MN3 is connected to the drain of the fourth NMOS tube MN4, the source is grounded, and the gate is connected to the third input SL.
[0041] Such as figure 2 As shown, the drain of the third NMOS transistor MN3 in the less than interval matching unit LERMC circuit is connected to the second input GE path, its gate is connected to the D terminal, and the source of the third NMOS transistor MN3 is connected to the fourth input GE path. The drain of the NMOS transistor MN4 is connected, its source is grounded, and the gate is connected to the fourth input SL#, which is the ...
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