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Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit

A unit circuit and matching unit technology, which is applied in the field of interval matching CAM unit circuits and the RCAM memory composed of them, can solve the problems of poor circuit anti-noise ability and limited circuit speed, etc. Effects of Voltage Swing

Active Publication Date: 2014-05-07
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The circuit significantly reduces the problem of leakage current in the matching unit, but the circuit’s anti-noise ability is not good due to the voltage drop of the threshold voltage in the internal nodes of the matching unit. limit

Method used

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  • Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit
  • Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit
  • Range matching CAM (Content Addressable Memory) unit circuit and RCAM (Range Content Addressable Memory) composed of range matching CAM unit circuit

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Experimental program
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Embodiment Construction

[0039] The present invention will be further described below in conjunction with the drawings.

[0040] Such as figure 1 As shown, the drain of the third NMOS transistor MN3 in the greater-than-interval matching unit GERMC circuit is connected to the second input GE path, and its gate is connected to the D# terminal. The D# terminal is the logic negation of the D terminal, and the third NMOS The source of the tube MN3 is connected to the drain of the fourth NMOS tube MN4, the source is grounded, and the gate is connected to the third input SL.

[0041] Such as figure 2 As shown, the drain of the third NMOS transistor MN3 in the less than interval matching unit LERMC circuit is connected to the second input GE path, its gate is connected to the D terminal, and the source of the third NMOS transistor MN3 is connected to the fourth input GE path. The drain of the NMOS transistor MN4 is connected, its source is grounded, and the gate is connected to the fourth input SL#, which is the ...

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Abstract

The invention relates to the technical field of manufacturing of integrated circuits and provides a range matching CAM (Content Addressable Memory) unit circuit and an RCAM (Range Content Addressable Memory) composed of the range matching CAM unit circuit. According to the range matching CAM unit circuit, high-voltage swing is greater than a GERMC circuit in a range matching unit; a fifth NMOS (N-channel Metal Oxide Semiconductor) tube is in complementary combination with an MP1 of a first PMOS (P-channel Metal Oxide Semiconductor) tube; a grid electrode of the MP1 is connected with a D# end; a source electrode of the MP1 is connected with a third input SL; an MN6 of a sixth NMOS tube is in the complementary combination with an MP2 of a second PMOS tube; a grid electrode of the MP2 is connected with a D end; a source electrode of the MP2 is connected with a fourth input SL#; a node connected between the two combined tubes which are mutually connected in series is connected with the grid electrodes of an MN1 and an MN2 of a first NMOS tube and a second NMOS tube; a drain electrode of an MN3 of a third NMOS tube is connected with a second input GE path, and the grid electrode of the MN3 of the third NMOS tube is connected with the D# end. According to the range matching CAM unit circuit and the RCAM, the two PMOS tubes are introduced to change transmission tubes MN5 and MN6 into transmission gates so that the P-point voltage swing is improved and the voltage drain drain VDD can be reached, so that the transmission speeds of signals equal to a chain or greater than the chain are increased and the circuit speed is increased; meanwhile, the robustness of the unit circuit is also improved and the anti-noise capability is improved.

Description

Technical field [0001] The present invention relates to the technical field of integrated circuit manufacturing, and more specifically, to a range matching CAM (Content Addressable Memory, content addressable memory) unit circuit and RCAM (Range Content Addressable Memory) composed of a range matching CAM (Content Addressable Memory) unit circuit. Memory) memory. Background technique [0002] With the rapid advancement of Internet technology, network traffic continues to increase, and network speeds continue to increase, which requires continuous updates of Internet hardware equipment to meet the needs of rapid network development. For an IPV4 data packet, the port search operation is usually completed by the RCAM circuit, which puts forward higher requirements on the performance of the RCAM circuit speed and power consumption. The design of high-performance RCAM circuits is of great significance to the support of high-speed networks. The research on RCAM at home and abroad has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C15/04
Inventor 张建伟殷存禄吴国强郑善兴丁秋红潘阿成李中洲吕文欢王建陈晓明苗延楠
Owner DALIAN UNIV OF TECH
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