1912results about "Electroluminescent light sources" patented technology

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

An organic electroluminescence device includes: an anode; a cathode; a first emitting layer; and a second emitting layer provided between the first emitting layer and the cathode, in which the first emitting layer contains, as a first host material, a first compound that has at least one group represented by a formula (11A) below and that is represented by a formula (1) below, the second emitting layer contains, as a second host material, a second compound represented by a formula (2) below, and the first emitting layer and the second emitting layer are in direct contact with each other.

A display device has a display panel provided with a plurality of light emitting elements 10 including a light emitting part 30, and a lens member 50 through which light emitted from the light emitting part 30 passes, in which when a distance (an offset amount) between a normal LN passing through a center of the light emitting part 30 and a normal LN′ passing through a center of the lens member 50 is defined as D0, a value of the distance (offset amount) D0 is not 0 in at least some of the light emitting elements 10 provided in the display panel.

Provided is a triazine ring-containing polymer characterized by containing a repeating unit structure represented by formula (1) and having at least one triazine ring terminal, and in that at least a portion of the triazine ring terminal is blocked with an amino group having a crosslinking group (excluding a hydroxy-containing group). (In the formula, each of R and R' independently represents a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, or an aralkyl group; and Q represents an alkylene group having 3-30 carbon atoms and an alicyclic structure. The symbol * represents a bond.)

Provided is an optical laminate with excellent durability and an image display device formed of the optical laminate. The optical laminate includes a pressure sensitive adhesive layer 1, a specific laminate including a resin layer and a light absorption anisotropic layer which are adjacent to each other, and a pressure sensitive adhesive layer 2 in order, in which the light absorption anisotropic layer contains a dichroic substance, the pressure sensitive adhesive layer 1 is adjacent to the resin layer of the specific laminate, and a storage elastic modulus Ep of the pressure sensitive adhesive layer 1 and a storage elastic modulus Ea and a moist heat strain δa of the resin layer satisfy Expression (1-1) ¼ (3×Ep / Ea)2 / 3>δa.

A novel electronic device is provided. The electronic device includes a display apparatus, an arithmetic portion, and a gaze detection portion, and the display apparatus includes a functional circuit and a display portion divided into a plurality of sub-display portions. The gaze detection portion has a function of detecting a user's gaze. The arithmetic portion has a function of dividing the plurality of sub-display portions between a first section and a second section using a detection result of the gaze detection portion. The first section includes a region overlapping with a user's gaze point. The functional circuit has a function of making a driving frequency of the second section lower than a driving frequency of the first section.

A method for manufacturing a quantum dot layer includes: performing first application of applying, to a position overlapping with a substrate, a first solution including a plurality of particles including a core and a first ligand, a first inorganic precursor, and a first solvent; performing first heating of heating first solution to a first temperature or higher after the performing first application, the first temperature being a higher temperature of a melting point of the first ligand and a boiling point of the first solvent; and performing second heating of heating the first inorganic precursor to a second temperature after the performing first heating, the second temperature being higher than the first temperature and being a temperature, at which the first inorganic precursor epitaxially grows around the core and at which a first shell configured to coat the core is formed to form a plurality of first quantum dots.

To provide a semiconductor device with elasticity that can reduce an influence of expansion and contraction on a semiconductor element to stabilize characteristics of the semiconductor element.SOLUTION: A semiconductor device comprises: an elastic resin substrate 2 which includes an acrylic adhesive composition with adhesiveness; a plurality of non-elastic resin substrates 3 which are arranged side by side in a plane of the elastic resin substrate 2; and a plurality of semiconductor elements 4 which are arranged on respective planes of the plurality of non-elastic resin substrates 3, wherein the elastic resin substrate 2 has adjacent non-elastic resin substrates of the plurality of non-elastic resin substrates 3 made to freely expand and contract.SELECTED DRAWING: Figure 2

Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

A method for manufacturing a display device that can easily achieve higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is deposited over a first pixel electrode, a first sacrificial film is formed to cover the first EL film and a first electrode, and the first sacrificial film and the first EL film are etched, so that a first EL layer is formed over the first pixel electrode. Then, the first sacrificial film is removed to expose the first electrode. Furthermore, a common electrode is formed over the first EL layer and the first electrode. The first EL film is etched by dry etching, and the first sacrificial film is removed by wet etching.

The invention belongs to the technical field of electroluminescent fiber devices, and particularly relates to a dynamic color-changing electroluminescent fiber device and a preparation method thereof. The electroluminescent fiber device comprises a three-color electroluminescent fiber and a driving control circuit, the three-color electroluminescent fiber comprises an inner electrode conductive fiber, an outer electrode conductive fiber, three luminescent functional layers and a shared electrode; the driving control circuit comprises a lithium battery, an FPGA (Field Programmable Gate Array), an isolation inversion boost module and the like; the lithium battery supplies power to the whole circuit; the circuit system provides four independent output ports which are connected with the four electrodes; the three light-emitting functional layers are of a stacked structure formed by red, green and blue light-emitting active slurry through a step-by-step coating method, and the driving circuit independently controls the active light-emitting layers of the three colors, so that the light-emitting colors are free of crosstalk and can be regulated and controlled in real time, and dynamic color-changing light emitting of full-color-gamut light emitting is achieved. The color gamut is wide, the stability is high, and color crosstalk between the light-emitting layers is avoided; the method is good in repeatability, low in cost and suitable for industrial production.

An organic electroluminescence device includes an anode, a cathode, a first emitting layer, and a second emitting layer provided between the first emitting layer and the cathode in which the first emitting layer contains a first compound represented by a formula (1) below as a first host material, the first compound containing at least one group represented by a formula (11) below, the second emitting layer contains a second compound represented by a formula (2) below as a second host material, and the first emitting layer and the second emitting layer are in direct contact with each other.

According to an aspect, a detection device includes: a plurality of optical sensors arranged in a matrix having a row-column configuration; and an optical filter provided facing a surface for detecting light with the optical sensors. The optical filter includes a base configured not to transmit light and a plurality of apertures provided in the base and configured to transmit light. An arrangement of the apertures in the base comprises an arrangement in which the apertures are arranged spirally outward clockwise from a predetermined area and arrangement in which the apertures are arranged spirally outward counterclockwise from the predetermined area. The predetermined area contains a predetermined point.

A single photon source device is proposed. The device may include a reflection layer including a base portion and a recessed portion having a concave shape that is recessed from the base portion, a single emitter disposed within the recessed portion of the reflection layer and configured to emit a single photon, a solid resonator configured to fill the recessed portion to surround the single emitter, and a solid immersion lens portion disposed on the solid resonator to surround the solid resonator.

A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element, a first reflective film, and an insulating film. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material; the layer containing a light-emitting material includes a region interposed between the first electrode and the second electrode; the first electrode has a light-transmitting property; and the first electrode has a first thickness. The first electrode is interposed between a region of the first reflective film and the layer containing a light-emitting material, and the first reflective film has a second thickness. The insulating film includes a first opening portion, and the first opening portion overlaps with the first electrode. The insulating film has a first step-like cross-sectional shape, and the first step-like cross-sectional shape surrounds the first opening portion. The first step-like cross-sectional shape includes a first step, and the first step is larger than or equal to a thickness obtained by adding the second thickness to the first thickness.

A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.

Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorp-tion spectrum of the phosphorescent compound.

A light-emitting element includes: a first electrode; a second electrode; a light-emitting layer provided between the first electrode and the second electrode; and a charge transport layer provided between the first electrode and the light-emitting layer, wherein the charge transport layer includes a metal oxide nanoparticle, an organic ligand is chemically bonded to the metal oxide nanoparticle via a surface hydroxyl group of the metal oxide nanoparticle, a bond enthalpy at 298 K between bonding atoms at a bonding site between the organic ligand and the surface hydroxyl group is 326.7 kJ / mol or more, and the organic ligand includes a phosphonic acid.

To reduce display unevenness in a display device.SOLUTION: A display device includes: a light-emitting element; a first transistor and a second transistor connected in series between the light-emitting element and a driving power supply line; a third transistor electrically connected to a gate electrode of the first transistor; and a fourth transistor connected in parallel between a drain of the first transistor and the light-emitting element. A ratio of channel width W1 to channel length L1 of the first transistor (W1 / L1 ratio) and a ratio of channel width W2 to channel length L2 of the second transistor (W2 / L2 ratio) are larger than a ratio of channel width W3 to channel length L3 of the third transistor (W3 / L3 ratio) and a ratio of channel width W4 to channel length L4 of the fourth transistor (W4 / L4 ratio).SELECTED DRAWING: Figure 3

An alkali-free glass sheet according to the present invention contains, as a glass composition, in mol %, from 60% to 80% of SiO2, from 12% to 15% of Al2O3, from 1.2% to 4% of B2O3, from 0% to 0.5% of Li2O+Na2O+K2O, from 2% to 8% of MgO, from 2% to 11% of CaO, from 0% to 5% of SrO, from 0% to 5% of BaO, and from 10% to 16% of MgO+CaO+SrO+BaO, in which a mol % ratio B2O3 / Al2O3 is from 0.1 to 0.3, a mol % ratio (B2O3+BaO) / SiO2 is from 0.01 to 0.1, and MgO+CaO+SrO+BaO—Al2O3 is from −2% to +2%.

A novel organic compound is provided. A novel organic compound having a carrier-transport property is provided. A novel organic compound having a hole-transport property is provided. An organic compound having a low refractive index is provided. An organic compound having a low refractive index and a carrier-transport property is provided. An organic compound having a low refractive index and a hole-transport property is provided. An organic compound represented by the following general formula (G1) is provided.

A deposition mask package according to the present embodiment includes a receiving portion, a lid portion that faces the receiving portion, a deposition mask that is arranged between the receiving portion and the lid portion and has an effective region in which a plurality of through-holes is formed. The receiving portion has a first opposing surface facing the lid portion and a concave portion provided on the first opposing surface. The concave portion is covered by a first flexible film. The effective region of the deposition mask is arranged on the concave portion with the first flexible film interposed therebetween.

An organic electroluminescence device includes an anode, a cathode, a first emitting layer, and a second emitting layer provided between the first emitting layer and the cathode, in which the first emitting layer contains a first compound represented by a formula (101) below as a first host material, the second emitting layer contains a second compound represented by a formula (2) below as a second host material, and the first emitting layer is in direct contact with the second emitting layer.

This invention relates to a retardation film comprising: an A layer having a slow axis, and a B layer having a slow axis at an angle of 85° to 90° to the slow axis of the A layer; the A layer is formed of a resin A having positive intrinsic birefringence; the B layer is formed of a resin B having negative intrinsic birefringence; the resin B comprises polyester, polycarbonate, or polyester carbonate, wherein the polyester, polycarbonate, or polyester carbonate contains a fluorene framework; the overall in-plane retardation of the A layer and the overall in-plane retardation of the B layer satisfy a specific relationship; the in-plane retardations Re(450) and Re(550) of the retardation film at wavelengths of 450 nm and 550 nm satisfy a specific relationship; the overall thickness T of the A layer... A The overall thickness T of layer B B The ratio of T A / T B It ranges from 30 / 70 to 65 / 35.

The present disclosure provides an organic compound represented by general formula [1]. In formula [1], R1 and R2 are each independently selected from a hydrogen atom, an alkyl group, and so forth. Each R3 is independently selected from a deuterium atom, an alkyl group, and so forth, and l is an integer of 0 or more and 8 or less. m is an integer of 1 or more and 3 or less, and n is an integer of 0 or more and 2 or less, provided that m + n is 3. X is a bidentate ligand, and a partial structure IrX is any of structures represented by general formulae [2] and [3]. In formula [2] or [3], R9 to R19 are each independently selected from an alkyl group and so forth. A ring A is any of structures represented by general formulae [4] to [7]. In formulae [4] to [7], R20 to R29 are each independently selected from a hydrogen atom, an alkyl group, and so forth.

To provide a novel semiconductor device using an oxide semiconductor, in particular, to provide a planar type semiconductor device using an oxide semiconductor, or to provide a semiconductor device using an oxide semiconductor and that has a large on-state current.SOLUTION: A display device comprises: an oxide insulating film; an oxide semiconductor film on the oxide insulating film; a source electrode and a drain electrode contacted with the oxide semiconductor film; a gate insulating film between the source electrode and the drain electrode; and a gate electrode overlapped with the oxide semiconductor film via the gate insulating film. The oxide semiconductor film has: a first region overlapped with the gate electrode; and a second region not overlapped with the gate electrode, nor the source electrode, nor the drain electrode. Impurity element concentrations of the first region and the second region are different from each other. The gate electrode, the source electrode, and the drain electrode contain the same metal element.SELECTED DRAWING: Figure 1

A display apparatus in which a voltage drop is sufficiently suppressed is provided. The display apparatus includes a first light-emitting device including a first lower electrode and a first organic compound layer positioned over the first lower electrode; a second light-emitting device including a second lower electrode and a second organic compound layer positioned over the second lower electrode; a common electrode included in the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer; the second wiring layer is electrically connected to the first wiring layer through a contact hole in an insulating layer; and the second wiring layer has a lattice shape in a top view.

Provided is a method for producing semiconductor nanoparticles that exhibit band-edge luminescence and have an emission spectrum with a narrow half-width. The method for producing semiconductor nanoparticles comprises: preparing a first mixture containing an organic solvent and at least one compound selected from the group consisting of compounds having an indium (In)-sulfur (S) bond and compounds having a gallium (Ga)-sulfur (S) bond; adjusting the first mixture to a first temperature in the range of 40-180°C, and then mixing with a solution containing a silver (Ag) salt and an organic solvent to obtain a second mixture including composite particles of silver sulfide and a sulfide containing at least one of indium and gallium; and heat-treating the second mixture by adjusting the second mixture to a second temperature in the range of 130-240°C, and maintaining the second temperature for one second or more to obtain first semiconductor nanoparticles.

An LED lighting arrangement comprising an array of LED packages of different types. A first type comprises a domed lens and a second type does not comprise a domed lens. The LED in each type of LED package is a phosphor-coated light emitting diode.

Provide a single-emitting-layer top-emission OLED having improved performance, including improved efficiency and improved voltage. 【Solution means】In an organic light-emitting diode including an opaque substrate, an anode, a cathode, a first light-emitting layer, a second light-emitting layer, a first charge generation layer, and an electron transport laminate, and a display device or a light-emitting device including the same, the electron transport laminate includes a first electron transport layer and a second electron transport layer; The first electron transport layer contains a compound of formula (I), (Ar 1 -A c ) a -X b (I); a and b are independently 1 or 2; c is independently 0 or 1, The second electron transport layer contains a compound of formula (II), (Ar 2 ) m -(Z k -G) n (II); m and n are independently 1 or 2; k is independently 0, 1 or 2, an organic light-emitting diode.