56 results about "Amorphous oxide" patented technology

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

A glass is an amorphous oxide glass. An SiO2 content ranges from 56 mol % to 80 mol %, an Li2O content is 2.00 mol % or less, a B2O3 content ranges from 0 mol % to 4 mol %, a total content of MgO and CaO (MgO+CaO) ranges from 9 mol % to 40 mol %, and the oxide glass has a specific gravity of 2.75 g / cm3 or less, and a glass transition temperature of 650° C. or higher.

Disclosed in the present application are a solar cell and a preparation method, a photovoltaic device, an electric device and a power generation device. The solar cell comprises: a first electrode, a first light-absorbing layer, a composite layer, a second light-absorbing layer and a second electrode, which are sequentially stacked, wherein the first light-absorbing layer is arranged between the first electrode and the composite layer, the second light-absorbing layer is arranged on the side, away from the first light-absorbing layer, of the composite layer, and the second electrode is arranged on the side, away from the composite layer, of the second light-absorbing layer. The composite layer comprises an amorphous oxide, and the amorphous oxide comprises an indium gallium zinc oxide. By designing that the composite layer comprises an amorphous oxide, the indium gallium zinc oxide is in an amorphous state, and the amorphous state is a crystal structure lacking of long-range order, such that the migration path of carriers in the material becomes complex and discontinuous, and the lateral migration of carriers in the composite layer is reduced, which is beneficial for improving the performance of the solar cell.

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

The invention relates to the technical field of batteries, in particular to a high-entropy amorphous oxide material and a preparation method thereof, an electrolyte material and a battery. The preparation method provided by the invention comprises the following steps: providing lithium oxide, rare earth oxide and zirconium oxide, and mixing the lithium oxide, the rare earth oxide and the zirconium oxide according to a preset first molar ratio to obtain an oxide matrix; providing a transition metal oxide and a glass network forming body, and mixing the matrix, the transition metal oxide and the glass network forming body according to a preset second molar ratio to obtain a precursor; treating the precursor by adopting a sol-gel method or a ball milling method, and then heating and cooling to obtain an amorphous compact structure; and providing a substrate, taking the amorphous compact structure as a target material, depositing the target material on the substrate by adopting a magnetron sputtering method, and stripping the substrate to obtain the high-entropy amorphous oxide material. The invention seeks an amorphous oxide material which is stable in structure and has higher ionic conductivity compared with an inorganic solid electrolyte.

Provided is a glass plate having a high average strength and a small degree of dispersion of the strength. A glass plate which contains a base glass phase and an intermediate phase, the base glass phase being an amorphous oxide that contains 50%-80% of SiO2, 0%-30% of Al2O3, and 0.1%-35% of Li2O in terms of oxide-based mol%, and the intermediate phase being an amorphous oxide that contains 50%-80% of SiO2, 5%-20% of Al2O3, and 5%-20% of Li2O in terms of oxide-based mol% and has a composition different from that of the base glass phase.

A vertical NAND flash memory device, a method of manufacturing the vertical NAND flash memory device, and an electronic device including the vertical NAND flash memory device are provided. The vertical NAND flash memory device includes a plurality of cell strings, each cell string extending in a direction perpendicular to a substrate. Each of the plurality of cell strings includes a channel layer, a charge trapping layer provided on the channel layer and including an amorphous oxide, at least one insertion layer provided inside the charge trapping layer, and a plurality of gate electrodes provided on the charge trapping layer.

The invention discloses a detector based on an amorphous oxide thin film transistor doped with N and nano-particles. The detector comprises a doped polycrystalline silicon substrate, an active layer and a metal electrode layer which are sequentially stacked, the doped polycrystalline silicon substrate comprises a silicon dioxide layer and heavily doped n-type polycrystalline silicon which are stacked; the silicon dioxide layer clings to the active layer; the active layer comprises at least two layers of N-doped amorphous indium gallium zinc oxide thin films; a metal nano-film is arranged on the side surface, facing the silicon dioxide layer, of the amorphous indium gallium zinc oxide film; the metal nano-film is formed by paving metal nano-particles; the metal electrode layer comprises a first metal electrode and a second metal electrode which are patterned and provided with a gap. According to the photoelectric detector, the double-layer metal nano thin film is constructed on the interface of the insulating layer and in the active layer body, and the two layers of amorphous indium gallium zinc oxide thin films are arranged and N doping is introduced, so that the detection rate is improved, the detection range is expanded, and meanwhile, the working stability of the device is improved.

A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

The application provides a metal oxide thin film transistor and a preparation method thereof. The metal oxide thin film transistor is provided with a channel protection layer and a sacrifice layer in sequence on an active layer. The sacrifice layer is any one or a combination of at least two of amorphous oxide thin film, nitride thin film, oxynitride thin film, fluoride thin film or sulfide thin film. In the preparation method, the active layer, the channel protection layer and the sacrifice layer can be continuously deposited, and one etching patterning can be realized. The method is simple in operation, low in preparation cost, realizes preparation of a short channel device, and has large-scale industrialized application prospect.

The application discloses a preparation method and application of high-performance nickel-platinum catalytic material and a use method, wherein the nickel foam is immersed into a solution containing a certain amount of chloroplatinic acid, and a Ni-Pt composite electrode containing rich NiO on the surface is prepared through a simple one-step chemical corrosion method. The embedded NiO on the surface can effectively reduce a water decomposition energy barrier, the introduction of Pt forms a PtNi alloy with high HER activity with the nickel foam substrate, thereby greatly reducing the amount of Pt and ensuring the adsorption / desorption efficiency of H intermediates, the stable NiO nanoparticles on the surface can effectively avoid the formation of unstable amorphous oxide on the surface of the PtNi alloy, thereby greatly improving the catalytic stability, and finally, the NiO and the PtNi alloy synergistically improve the electrocatalytic efficiency.

A metallic component for high-temperature non-aqueous environments has a body of metallic material and a protective coating applied to an outer surface of the body of metallic material, intended in use to contact a non-aqueous working fluid. The protective coating includes at least one layer of amorphous aluminum oxide, the at least one layer of amorphous aluminum oxide having at least one doping element uniformly dispersed in the layer of amorphous aluminum oxide, the at least one doping element being selected from the group consisting of C, Na, K, Cs, Mg, Ca, Sr, P, Si, Fe, Y, Zr, Mo, W, La, Ce, Er, and Yb.

The application relates to the technical field of ceramic material preparation, in particular to a high-strength and high-toughness nano-zirconia ceramic material and a preparation method and application thereof. The preparation method of the nano-zirconia ceramic material provided by the application comprises the following steps: taking zirconia powder particles with an amorphous oxide film on the surface as raw materials, and performing forming and sintering treatment. The application firstly proposes to construct a functional gradient film layer on the surface of the zirconia powder particles by using an ALD technology, the obtained film is recrystallized in the subsequent forming and sintering process, oxide grains with nanometer and submicron sizes are formed and distributed in the zirconia grains and the grain boundaries, so that the purposes of strengthening and toughening are achieved; meanwhile, the obtained material has a nano-phase structure, and the biological activity is significantly improved.

This invention provides a low-conductivity amorphous alloy material and its preparation method, belonging to the field of additive manufacturing. The preparation method includes the following steps: pre-oxidizing amorphous alloy powder under an oxidizing atmosphere to form an amorphous oxide layer on the surface of the amorphous alloy powder, thereby obtaining pre-treated amorphous alloy powder; and shaping the pre-treated amorphous alloy powder to obtain a low-conductivity amorphous alloy material. This invention, by pre-oxidizing the amorphous alloy powder and combining it with subsequent shaping processes to introduce an oxide interface layer into the amorphous alloy material, forms a network-like amorphous oxide interface. This not only effectively reduces the conductivity of the amorphous alloy material but also promotes the nucleation of the shear transition zone, avoiding the localization of shear deformation. Furthermore, the strong bonding between metal atoms and oxygen atoms on the amorphous oxide interface makes it difficult for the shear transition zone to expand through the oxide interface, thus promoting the improvement of material strength.

A metal composite oxide of the present invention is a metal composite oxide containing iridium, ruthenium, and a third metal (M), in which the third metal (M) is one or more elements selected from the group consisting of Group 2 elements, Group 13 elements, Group 14 elements, and transition metals, and the metal composite oxide is a low crystalline oxide or an amorphous oxide.

The present invention relates to a transparent heating element and a manufacturing method therefor, the element comprising: a substrate; a first amorphous oxide layer deposited on the substrate; a metal layer deposited on the first amorphous oxide layer; a second amorphous oxide layer deposited on the metal layer; and an electrode layer that encompasses two ends of each of the first amorphous oxide layer, the metal layer and the second amorphous oxide layer from two ends of the substrate. Provided is the transparent heating element in which layers made of amorphous oxides are disposed on the upper and lower surfaces of a metal layer, and the transparent heating element has low power, high performance and moisture resistance characteristics due to the uniform surfaces of the amorphous oxide layers.

Capacitors that include an amorphous insulator layer can provide high capacitance density and low leakage. A capacitor may include two metal plates, a crystalline insulator material between the metal plates, and a thin layer of an amorphous insulator within the crystalline layer. The crystalline insulator material may be crystalline titanium dioxide, such as rutile, or a dielectric perovskite oxide, such as strontium titanium oxide or barium titanium oxide. The amorphous layer may be an amorphous oxide, such as amorphous titanium oxide, or a different oxide from the crystalline layer. The amorphous oxide layer may be sandwiched between two layers of the crystalline insulator. Alternatively, the amorphous oxide layer may be adjacent to one of the metal plates. The capacitors may be used in decoupling capacitors, memory, or for other applications.

A glass for magnetic recording medium substrate is an amorphous oxide glass. In terms of mol %, SiO2 content ranges from 45 to 68%, Al2O3 from 5 to 20%, total content of SiO2 and Al2O3 60 to 80%, B2O3 from 0 to 5%, MgO from 3 to 28%, CaO from 0 to 18%, total content of BaO and SrO 0 to 2%, total content of alkali earth metal oxides from 12 to 30%, total content of alkali metal oxides from 3.5 to 15%, and at least one kind selected from the group made of Sn oxide and Ce oxide being included, a total content of Sn oxide and Ce oxide ranges from 0.05 to 2.00%, a glass transition temperature ≥625° C., a Young's modulus ≥83 GPa, a specific gravity ≤2.85, and an average linear expansion coefficient at 100 to 300° C.≥48×10−7 / ° C.

The invention discloses a multi-element carbide coating resistant to oxidation and abrasion at high temperature and a preparation method thereof. The coating is composed of a CrY / CrYTiAl composite transition layer and a (TiCrNbAlY) C functional layer, the atomic percent of the C element in the functional layer is 40%-60%, and the atomic percent of the five metal elements of Ti, Cr, Nb, Al and Y is 5%-12%. A multi-arc ion plating technology is adopted for preparation, argon is firstly introduced to deposit the composite transition layer, and then acetylene and argon are introduced to deposit the functional layer. The thermal stress between the substrate and the coating is effectively relieved through the composite transition layer, and the bonding strength is improved; the functional layer can form a compact amorphous oxide layer and a single-phase high-entropy oxide layer at high temperature, oxygen diffusion is remarkably hindered, cracks are avoided, meanwhile, the oxide layer plays a solid lubrication role in the friction process, and excellent high-temperature oxidation resistance and wear resistance are shown. The coating is compact in structure, good in combination and suitable for various base materials such as stainless steel and high-temperature alloy, and has wide application prospects in surface protection of high-temperature components in the fields of aerospace, energy equipment and the like.

The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

This optical actuator driven by irradiation light includes a dielectric layer comprising SmxBi1-xFeO3 with high orientation, and a protective layer comprising amorphous oxide. Distortion is added to the dielectric layer from the protective layer. The dielectric layer is deformed by inverse piezoelectric effect by the irradiation light. The optical actuator driven by the irradiation light includes a dielectric layer comprising polycrystalline SmxBi1-xFeO3, and a protective layer comprising amorphous oxide. The dielectric layer is deformed by inverse piezoelectric effect by irradiation light.

The invention discloses a solar cell and a preparation method thereof, photovoltaic equipment, electric equipment and power generation equipment. The solar cell comprises a first electrode, a first light absorption layer, a composite layer, a second light absorption layer and a second electrode which are sequentially stacked, the first light absorption layer is arranged between the first electrode and the composite layer, the second light absorption layer is arranged on the side, away from the first light absorption layer, of the composite layer, and the second electrode is arranged on the side, away from the composite layer, of the second light absorption layer; wherein the composite layer comprises amorphous oxides, and the amorphous oxides comprise oxides of indium, gallium and zinc. The composite layer is designed to comprise amorphous oxide, indium oxide, gallium oxide and zinc oxide which are in an amorphous state, and the amorphous state is a crystal structure lacking long-range order, so that the migration path of a carrier in the material becomes complex and discontinuous, the transverse migration of the carrier in the composite layer is reduced, and the performance of the solar cell is improved.

The invention discloses a photoelectric device and a preparation method thereof and a display device.The photoelectric device comprises a cathode, a modification layer, an electronic function layer and an anode which are arranged in a stacked mode, the material of the modification layer comprises amorphous oxide, and the material of the electronic function layer comprises N-type metal oxide. Through the arrangement of the modification layer, the corrosion of the electronic function layer to the cathode under the condition of long-time electrification can be reduced, and the conductive stability of the electronic function layer is improved.

The invention discloses a FeFET transistor and a related integrated circuit. The channel layer of the transistor (1612a) may be formed of an amorphous oxide semiconductor. Examples of amorphous oxide semiconductors that can be utilized include indium oxide, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), cadmium oxide, hafnium indium zinc oxide (HIZO), tin oxide, and indium tin zinc oxide (ITZO), etc. The amorphous oxide semiconductor channel layer may also be doped with elements such as gallium, indium, zinc, tin, hafnium, silicon, aluminum to optimize carrier concentration and mobility.

To provide an environmental-resistant coating or an environmental-resistant coating system.SOLUTION: A bond coat layer comprises an oxide matrix. Throughout the oxide matrix are dispersed: an oxide-gettering phase; a SiO2-based phase that may be amorphous or crystalline; a crystalline phase; and an amorphous oxide phase that serves as a self-healing phase capable of softening or melting at a predetermined temperature below the melting temperature of the oxide matrix and flowing into cracks formed in the oxide matrix. The amorphous oxide phase includes an alkaline earth aluminosilicate glass, and the crystalline phase includes Al6Si2O13, ZrSiO4, HfSiO4, Ca2ZrSi4O12, Ca2HfSi4O12, CaAl2Si2O8, CaSiO3, Al2TiO5, Mg2Al4Si5O18, BaAl2Si2O8, BaZrSi3O9, Y2Si2O7, Yb2Si2O7, and / or Al2O3.SELECTED DRAWING: Figure 1

The application provides a preparation method of a small CGP amorphous oxide semiconductor transistor based on edge contact, and belongs to the technical field of semiconductors. Compared with a traditional top contact process, the edge contact process is adopted in the application, the metal source electrode and the drain electrode are directly contacted with the edge of the amorphous oxide channel, the space squeezing problem of the small CGP device can be solved, the preparation of a smaller CGP device is facilitated, and the size of the device is further miniaturized. In addition, the application is suitable for a transistor structure with a vertical channel, the depth of a through hole determines the length of the channel, and the further miniaturization of the CGP is facilitated.

The embodiment of the present application provides an array substrate and a display panel. The array substrate comprises a substrate, an active layer and a source / drain metal layer. The active layer comprises a crystalline oxide layer and an amorphous oxide layer which are arranged in a stack, and a rare earth element which is arranged in at least one of the crystalline oxide layer or the amorphous oxide layer. By arranging the crystalline oxide and the rare earth element in the active layer, the crystalline oxide layer can effectively resist plasma bombardment and acidic corrosion, thereby reducing defects of the active layer, and meanwhile, the rare earth element in the active layer can form a recombination center of photo-generated carriers, thereby inhibiting photo-generated current, improving stability of the thin film transistor, and improving comprehensive performance of the display panel.

Integrated circuitry comprising transistor structures having a channel portion over a base portion of fin. The base portion of the fin is an insulative amorphous oxide, or a counter-doped crystalline material. Transistor structures, such as channel portions of a fin and source and drain materials may be first formed with epitaxial processes seeded by a front side of a crystalline substrate. Following front side processing, a backside of the transistor structures may be exposed and the base portion of the fin modified from the crystalline substrate composition into the amorphous oxide or counter-doped crystalline material using backside processes and low temperatures that avoid degradation to the channel material while reducing transistor off-state leakage.