35 results about "Mono layer" patented technology

In this method for manufacturing an optical semiconductor device, a characteristic matrix of a single-layer cover film (12) having a film thickness of [lambda] 0 / 4 / nfl is made equal to a characteristic matrix of a multi-layer cover film (13, 14, 15) using two or more materials in which one material has a refractive index lower than the refractive index nfl and the other material has a refractive index higher than the refractive index nfl, thereby calculating the minimum value Rmin0 of the refractive index. The characteristic matrix of a single-layer cover film (12) having a film thickness of [lambda] 0 / 4 / nfl1 is made equal to the characteristic matrix of a multi-layer cover film (13, 14, 15) using two materials, one of which has a lower refractive index than the refractive index nfl1 and the other one of which has a higher refractive index than the refractive index nfl1, so that the minimum value (Rmin) at the wavelength [lambda] min of the multi-layer cover film (13, 14, 15) matches the minimum reflectance (R0). Multiple layers of cover films (13, 14, 15) are formed on the end surfaces on the basis of the obtained film thicknesses.

This invention provides a method for preparing wafer-level two-dimensional material arrays, specifically relating to the field of two-dimensional atomic crystal material transfer technology. The method includes: preparing a mixed solution according to a preset ratio; preparing a PDMS stamp with multiple PDMS protrusions on its upper surface, arranging the protrusions in a preset pattern; growing a continuous monolayer two-dimensional TMDs film on a growth substrate; bonding the PDMS protrusions of the PDMS stamp to the monolayer two-dimensional TMDs film; separating the monolayer two-dimensional TMDs film from the growth substrate using the mixed solution; peeling off the portion of the monolayer two-dimensional TMDs film outside the contact area with the upper surface of the PDMS protrusions to obtain a patterned monolayer two-dimensional TMDs film; and transferring the patterned monolayer two-dimensional TMDs film onto a target substrate. This method solves the problem of existing technologies being unable to transfer large-size monolayer two-dimensional TMDs films at low cost, high efficiency, and simple simplicity, thus failing to meet the requirements of large-scale grain integration.

The invention discloses a layer thickness self-adaption method and system for 3D printing concrete. The system is used for achieving the method. According to the method, the technical problems that in traditional fixed layer thickness printing, single-layer thickness deviation accumulation is caused by factors such as material fluctuation, and then total height errors of components and uneven layers are caused are solved. The method comprises the steps that after printing of each layer (N layers) is completed, three-dimensional shape information of the upper surface of the layer is obtained through the surface scanning distance measuring unit, and actual height distribution data are generated; comparing actual data with theoretical model slice data, and calculating height deviation information; on the basis of the deviation information, generating a compensation strategy comprising a reference height adjusting instruction for the fine-adjustable printing platform and / or a dynamic adjusting instruction for printing parameters of the next layer (N + 1); and finally, executing the strategy and starting printing of the next layer. Closed-loop feedback control in the printing process is achieved, errors can be compensated layer by layer in real time, and the overall size precision and interlayer quality of a printed component are effectively improved.

1. Name of the product in this design: Automatic Inspection Machine. 2. Purpose of this design: This design is used for defect detection of inner layers, outer layers, single layers, and multilayer circuit boards. 3. The key design features of this product are: the shape of Design 1 in this product; and the combination of the shapes and colors of Design 2 and Design 3 in this product. 4. The picture or photo that best illustrates the key design points: Design 1 3D diagram 1. 5. Design 1 is designated as the basic design.

The utility model belongs to the technical field of insulating layers, and particularly relates to a composite precise insulating layer structure, which adopts an atomic deposition system, a first layer adopts a precursor source and a metal source to form a high refractive index layer; the second layer adopts a precursor source and a metal source to form a low-refractive-index layer; the third layer to the N layer adopt precursor sources to alternately form a periodic refractive index gradient structure, the total layer number N is larger than or equal to 3, the single-layer thickness is lambda / (4n), lambda is the target regulation and control optical wavelength, and n is the film layer refractive index. According to the utility model, more than three layers are alternately stacked, so that films with high and low refractive indexes can be obtained through insulating layers formed by different precursor sources, and as a Bragg structure, the reflectivity is improved; in addition, the third layer starts to form a gradient structure with a periodic refractive index, and the regulation and control requirements of the light-emitting device on light overflow and light reflection are facilitated.

A reflective photomask including a substrate, a multilayer reflection film, a protection film and a pattern of a light absorbing film is provided. The protection film has an extinction coefficient of 0.018 to 0.035, and a thickness of 1 to 6 nm, the light absorbing film is constituted of a single layer or multiple layers, the single layer or each layer of the multiple layers is composed of a material that contains ruthenium and platinum, and has a ruthenium content of 30 to 70 at %, a platinum content of 30 to 70 at %, and a total content of ruthenium and platinum of not less than 96 at %, the light absorbing film has a thickness of 32 to 38 nm, and a reflectance of 1 to 8% and a phase shift of 190 to 240 degrees, with respect to exposure light being light in extreme ultraviolet range.

An optical semiconductor device (500) according to the present disclosure has a wavelength λd and an effective refractive index nc, the optical semiconductor device being characterized by comprising an antireflection film (40) that is formed on an end surface of the optical semiconductor device and is composed of a plurality of covering films, wherein: the plurality of covering films are constituted by m (m ≥ 1) single covering films and n (n ≥ 2) covering film pairs that are each constituted by both a first covering film composed of a first material having a refractive index n1 lower than nc 1 / 2 and a second covering film composed of a second material having a refractive index n2 higher than nc 1 / 2; if the first covering films each have a reference film thickness d1 and the second covering films each have a reference film thickness d2, the film thickness of the i-th (2 ≤ i ≤ n) covering film pair is represented by pid1+pid2 by using weighting factor pi; and if the j-th single covering film has a reference film thickness dj (3 ≤ j ≤ m+2), the reference film thickness dj is the same as the reference film thickness d1 or the reference film thickness d2, the refractive index of the j-th single covering film is nj, and the film thickness thereof is represented by qjdj by using weighting factor qj.

The application discloses a device and a method for preparing a colloidal quantum dot monolayer film in a roll-to-roll mode, which comprises a spreading groove, a solution spreading assembly and a roll-to-roll transfer mechanism, the roll-to-roll transfer mechanism is composed of a flexible substrate, a driving roller, a driven roller and two guide rollers, supports are arranged at four corners of the spreading groove, the two ends of the driving roller are respectively installed on the two supports on the left side of the spreading groove, the two ends of the driven roller are respectively installed on the two supports on the right side of the spreading groove, the two guide rollers are installed in the spreading groove, a fixing frame is arranged in the spreading groove, the solution spreading assembly is fixed on the inclined surface of the fixing frame in the spreading groove, the solution spreading assembly is composed of a silicon wafer, a glass sheet and a capillary tube, one end of the flexible substrate is fixed on the driven roller and sequentially passes through the two guide rollers, the other end is fixed on the driving roller, and the spreading groove contains a liquid carrier. The application can quickly and efficiently prepare a large-area quantum dot monolayer film.

Provided is an optical element which has a retarder layer that achieves uniform retardation despite a non-planar optical surface of the optical element and which does not require complicated steps for fabrication. The optical element 10 includes a substrate 11 having a non-planar optical surface 11a, and a retarder layer 12 on the optical surface 11a. The retarder layer 12 has a uniform retardation value throughout the layer and is composed of a single layer. The optical element 10 may lack a molecule alignment mechanism to promote retardation in the retarder layer 12.

An apparatus and method for designing a multilayer film are disclosed. The apparatus for designing a multilayer film may perform: modeling a multilayer film to be designed as a single-layer structure having a preset thickness; collecting physical property data about the film corresponding to the single layer structure; reading a value pre-stored in a storage space accessible to a device for designing the multilayer film, and obtaining a feature setting mode for specifying different feature setting modes according to the read value; performing feature setting based on a plurality of physical indicators selected from the physical characteristic data according to a feature setting mode; selecting at least one of a plurality of supervised learning models capable of performing regression analysis as a machine learning model; predicting a dart impact strength of the multilayer film by using a machine learning model learned by using the feature as an independent variable and a dart impact strength of the multilayer film as a target variable; and generating design data on the multilayer film by combining the predicted values on the other characteristics and the predicted value on the falling dart impact strength so as to meet the design requirements of the multilayer film.

The invention belongs to the technical field of electronic functional materials and devices, and particularly relates to a PZT-based composite film with a wide-temperature-range negative electrocaloric effect, the PZT-based composite film with the wide-temperature-range negative electrocaloric effect is obtained by alternately overlapping a TiO2 component layer, an Hf0. 5Zr0. 5O2 component layer, a PbO component layer and a PbZrxTi1-xO3 component layer in sequence, x represents a mole fraction and is larger than or equal to 0.20 and smaller than or equal to 0.60, and each component layer is a single-layer sheet or is formed by overlapping multiple layers of sheets. The invention also provides a preparation method of the PZT-based composite film. According to the method disclosed by the invention, the large electrocaloric effect is effectively excited by regulating and controlling the defect dipole, so that the PZT-based composite film has the effect of the negative electrocaloric effect in a wide temperature range.

The invention provides a single-layer-structure cooling soft film for a display screen and a preparation method of the single-layer-structure cooling soft film, and belongs to the field of radiation refrigeration. The cooling soft film comprises a release film layer, a silica gel layer, a base material layer, a hardened coating, a spectrum regulation and control cooling layer and a hydrophobic coating which are sequentially stacked from bottom to top, wherein the total number of the spectrum regulation and control cooling layers is larger than or equal to 8, the spectrum regulation and control cooling layers comprise high-refractive-index layers and low-refractive-index layers which are alternately stacked, and the low-refractive-index layers are adjacent to the hardened coating. The high-refractive-index layer and the low-refractive-index layer are dielectric film layers and do not contain metal layers. The hydrophobic coating is formed by mixing an AF anti-fingerprint agent and an HC component and then coating the mixture. The total thickness of the cooling soft film is 60-200 [mu] m (the thickness of a use layer); according to the invention, the transmittance at the wave band of 0.4-0.76 [mu] m is greater than 90%, the weighted (weighted AM1.5 solar radiation energy) reflectivity at the wave band of 0.76-1.4 [mu] m is greater than 35%, functions of an under-screen infrared sensor can be realized, the emissivity at the wave band of 8-13 [mu] m reaches more than 90%, and low visual chromatic aberration is realized at different reflection angles.

The application discloses a composite film based on a polar topological domain structure, a ferroelectric memory and a preparation method thereof, and belongs to the technical field of ferroelectric materials. The composite film comprises a dielectric layer and a ferroelectric layer, the dielectric layer comprises a dielectric material, the ferroelectric layer comprises a ferroelectric material, and the ferroelectric layer is arranged in parallel on the surface of the dielectric layer; one of the dielectric layer and the ferroelectric layer is grown on the surface of the other layer; the thickness of the dielectric layer is X times the thickness of a single unit cell layer of the dielectric material, the thickness of the ferroelectric layer is Y times the thickness of a single unit cell layer of the ferroelectric material, 0.5 < Y / X < 10, and the thickness of the composite film is not more than 30 nm. The application can realize the preparation of a single-layer polar Sgmin-like topological nanodomain in an ultrathin composite film, and can prepare a ferroelectric memory with high density, high response speed and low energy consumption.

Multilayer metrology systems and methods are described. The prior art is configured to measure a bottom grating of a metrology target (e.g., a single layer grating of an overlay target) to determine a reference position of a layer (n) only with respect to another layer in the stack of semiconductor layers. In accordance with a product or layer, the present systems and methods are configured to facilitate alignment of layer n (or an average of both) on layer n-1 or layer n-2, and / or extract overlay information from these previous layers to improve alignment and / or other metrology determinations. The present systems and methods are configured to align a plurality of subsequent layers to the same metrology mark, even if the mark includes two or more gratings that directly overlap one another, and to perform alignment, overlay, and / or other metrology operations using the same physical mark.

A photomask blank including a transparent substrate, a film composed of a material containing chromium, and a film composed of a material containing tantalum is provided. The film composed of a material containing tantalum is constituted of a single layer or multiple layers, and has a thickness of 0.5 to 15 nm; the material containing tantalum contains tantalum, and oxygen or oxygen and nitrogen, and is free of silicon; the single layer and at least the layer remotest from the transparent substrate among the layers constituting the multiple layers are composed of a material containing tantalum that has a tantalum content of 40 to 80 at %, an oxygen content of 5 to 50 at %, and a nitrogen content of not more than 50 at %; and the layer remotest from the transparent substrate has a thickness of not less than 0.5 nm.

The application discloses a wear-resistant MgCuY / Cu amorphous / crystal multilayer film and a preparation method and application thereof, and comprises an amorphous MgCuY layer and a metal Cu layer which are alternately stacked by adopting a magnetron sputtering technology; the atomic percentage of each element in the MgCuY layer is as follows: Mg is 80%-88%, Cu is 3%-8%, and Y is 9%-12%; the single-layer thickness of the MgCuY layer is 4 nm, the single-layer thickness of the metal Cu is 4-32 nm, and the total thickness of the multilayer film is 0.84-1.06 microns. The hardness is higher than that of a pure Cu film and a MgCuY amorphous film, and the wear resistance is obviously improved compared with the pure Cu film.

The invention relates to a photomask blank and a method for manufacturing a photomask. Specifically, the present invention provides a photomask blank including a transparent substrate, a film formed of a chromium-containing material, and a film formed of a tantalum-containing material. The film formed by the tantalum-containing material is composed of a single layer or a plurality of layers and has a thickness of 0.5-15 nm; the tantalum-containing material contains tantalum and oxygen or contains tantalum, oxygen and nitrogen and does not contain silicon; at least the layer, farthest from the transparent substrate, in the single layer and the layers forming the multiple layers is made of a tantalum-containing material, the tantalum content of the tantalum-containing material is 40-80 at%, the oxygen content is 5-50 at%, and the nitrogen content is not larger than 50 at%; and the layer farthest from the transparent substrate has a thickness of not less than 0.5 nm.

An apparatus and method for designing a multilayer film is disclosed. An apparatus for designing a multilayer film may perform: modeling a multilayer film to be designed as a single layer structure having a preset thickness, collecting physical property data with respect to a film corresponding to the single layer structure, reading a value pre-stored in a storage space accessible by an apparatus for designing a multilayer film, and obtaining a feature setting mode for designating different feature setting manners depending on the read value, performing feature setting based on a plurality of physical indicators selected from the physical property data, depending on the feature setting mode, selecting at least one among a plurality of supervised learning models capable of a regression analysis as a machine learning model, predicting the dart impact strength of the multilayer film by using the machine learning model learned by taking the feature as an independent variable, and a dart impact strength of the multilayer film as a target variable, and generating design data for the multilayer film, by combining predicted values for other properties and a predicted value of the dart impact strength, so as to satisfy the design requirements of the multilayer film.

An optical filter includes a first dielectric multilayer film, a resin film, a phosphate glass, and a second dielectric multilayer film. The second dielectric multilayer film includes at least one H2 layer satisfying a refractive index of 1.8 or more and 2.5 or less and a QWOT of 1.1 or more and 3.5 or less, when a layer closest to the phosphate glass in the H2 layers is defined as a first H2 layer, the second dielectric multilayer film comprises a first M2 layer comprising a single layer satisfying a QWOT of 1.2 or more and 1.8 or less or a plurality of layers satisfying a total QWOT of 1.2 or more and 1.8 or less between the first H2 layer and the phosphate glass, and the optical filter satisfies all of the spectral characteristics (i-1) to (i-4).

A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.

The invention provides a multilayer epitaxial wafer and a preparation process thereof. The crystal orientation is lt; 100 gt; a plurality of epitaxial layers are stacked on the N-type conductive substrate in sequence, the thicknesses of the epitaxial layers are reduced in sequence, and the resistivity of the epitaxial layers is increased in sequence; and the epitaxial total film thickness is 9.5-10.5 [mu] m. The limitation of a traditional single-layer or double-layer epitaxial wafer is broken through, and stable preparation of a four-layer epitaxial structure is realized by adopting a processing technology of epitaxially growing a high-resistance N-type phosphorus-doped multi-layer epitaxial layer on a low-resistance N-type arsenic-doped silicon substrate; the epitaxial wafer is monitored layer by layer, so that the film thickness and the resistivity of each layer can be accurately controlled; a layer-by-layer film thickness decreasing processing method is adopted, so that interference between epitaxial middle layers can be effectively reduced, and the consistency and yield of product quality are improved; product performance is improved, and requirements of high-end electronic devices are met.

The purpose of the present invention is to provide a resin composition which is excellent in whitening resistance during deformation processing, and can be used for, for example, packaging materials for food products, construction materials, and packages for lithium ion batteries, and a monolayer film or a multilayer film including a layer containing the resin composition. The resin composition of the present invention includes a propylene-based polymer (A) having a melting point of 100°C or more, a 1-butene / ethylene copolymer (B) in which the content of a constituent unit (i) derived from 1-butene is 70 to 97 mol%, a polyolefin (C) containing a structural unit derived from an unsaturated carboxylic acid and / or a derivative thereof, and an ethylene-based polymer (D) containing a constituent unit derived from ethylene at 60 to 100 mol%. The content of the 1-butene / ethylene copolymer (B) in the composition is 7 to 38 mass%.

The invention provides a method wherein single layers of a wall element, consist of two (or more) strands. One of the strands is located at one side of the layer and another one of the strands is arranged at the other side of the layer. However, at one or more positions these sides may be changed. In this way, e.g. color, reflectivity, transmissivity, and or other optical properties may be controlled. Further, a strong(er) layer may be obtained. Printing becomes more flexible, as the two strands may essentially be printed continuously. There will thus be change positions within the layer where one strand is over the other, or vice versa. In order not to increase layer thickness (at those change positions), as all strands are within the same layer, at the change positions the layer thickness of the strands may be decreased. In specific embodiments, there may be a temporary stop during printing of one of the strands at the change position to provide space for the future strand. A kind of woven structure may be obtained, which may also provide strength. Especially, one of the strands may be transmissive for visible light. This may provide a light transmissive single layer, or a light transmissive wall element.

The invention relates to a four-dimensional dynamic label and a manufacturing method and a using method thereof, and the four-dimensional dynamic label is manufactured by combining a quantum dot film with organic glass; the application method comprises the following steps: S1, collecting position distribution data of all fluorescent points in a film, capturing position information of all particles on multiple groups of xy planes along a z axis to obtain a fluorescent image, converting the fluorescent image into a fluorescent key, and storing the fluorescent key; s2, performing first verification: reading any single-layer instantaneous fluorescence image in real time, converting the image into a fluorescence key, and comparing the fluorescence key with a label key in a database to judge whether the image is true or false; s3, non-first verification: marking the used fluorescent key as expired data; any single-layer fluorescence image is read again in real time and converted into a fluorescence secret key; and comparing with the tag key in the database to judge whether the tag is true or false. According to the method, the inherent random flicker behavior of the quantum dots is utilized, so that the four-dimensional dynamic PUF password primitive is almost impossible to predict or copy, and the security of an encryption system is remarkably improved.

The invention belongs to the technical field of film layer materials, and provides a TiNi / Ag multilayer film with small stress lag and large recoverable strain and a preparation method thereof. The TiNi / Ag multilayer film disclosed by the invention is a film layer unit which is periodically arranged; the film layer unit is composed of a TiNi layer (the content of titanium is 48-52.5 at.%) and an Ag layer which are sequentially arranged in a stacked mode. The single-layer thickness ratio of the TiNi layer to the Ag layer is larger than or equal to 2: 1. The Ag layer can form residual compressive stress on the TiNi layer, the residual compressive stress introduced by the Ag layer serves as prestress to act on the TiNi layer, critical stress of stress induced martensite variant reorientation of the TiNi layer is remarkably reduced, phase change is conducted in advance when the composite film is stretched, and phase change of the TiNi layer is assisted. Besides, in the stretching process, compared with a single TiNi layer, in the stretching deformation process of the TiNi / Ag multilayer film, the Ag layer can bear part of loads, and stress lag in the phase change process of the TiNi film is reduced.

To provide a film roll that can reduce winding troubles during transportation and during long-term storage and hold quality, and to provide a method of manufacturing the film roll, that enhances production yield and largely reduces also inspection load.SOLUTION: A film roll according to the present invention, in which a single layer optical film has been wound up, has an average maximum height difference (P-V)ave1 of a film thickness measured in a range of a diameter of 1000 mm using an arbitrary point in the optical film as a center is 0.15 to 0.40 μm, and a ratio (Dc / De) of an outer diameter Dc of a central portion of the film roll to an outer diameter De of an end portion is 0.98 to 1.02.SELECTED DRAWING: Figure 4

The invention relates to the technical field of microscopic optical measurement mechanics, and discloses a method for measuring bending deformation of a micron-sized multilayer composite film, which comprises the following steps of: activating the surface layer of an observation section, grafting nano-sized optical tracer particles in situ by using chemical bonding, and constructing an anti-slip three-dimensional speckle field; the method comprises the following steps of: performing continuous layer scanning in a depth direction under a micron-sized view field by utilizing a laser scanning confocal microscope aiming at the limit of extremely shallow depth of field of high-magnification imaging to obtain three-dimensional volume data with a high signal-to-noise ratio; a three-dimensional full displacement field is obtained by using a three-dimensional body feature tracking algorithm, and then a three-dimensional strain field is solved. The system provided by the invention solves the problems of difficult speckle making of a micron-sized narrow section, difficult observation of local wrinkle fluctuation and difficult calculation caused by plane hypothesis failure, and realizes accurate measurement and characterization of three-dimensional deformation of each single layer and interface of the multilayer composite film.

The application discloses a kind of composite film-base structure's sliding failure evaluation method, first, by modeling composite film as no traction model, the mechanical parameters of composite film are obtained analytically, parameter establishes new constitutive relation, subsequently using new constitutive relation gets the equilibrium equation and control equation of composite beam-soft base structure before sliding, finally by solving equation can obtain the interface sliding failure judgment criterion suitable for composite film-soft base structure model.Through analysis model, it can be concluded that the composite film-soft base structure model can be degraded to the single-layer film-soft base structure model under the plane strain assumption, and the risk of introducing error by the plane strain model is eliminated.The sliding failure evaluation method of composite film-base structure can determine whether the interface of flexible electronic device of composite film-soft base structure has sliding failure, which is closer to the actual engineering situation and eliminates the limitations of existing methods.

To obtain an optical semiconductor device in which film thicknesses of respective coating films of an antireflection film composed of multilayer coating films can be easily determined.SOLUTION: An optical semiconductor device 500 of the present disclosure has an effective refractive index nc and includes an antireflection film 40 composed of a plurality of coating films. The plurality of coating films include: n(n≥2) coating-film pairs constituted by a first coating film made of a first material having a refractive index n1 smaller than nc1 / 2, and a second coating film made of a second material having a refractive index n2 larger than nc1 / 2; and m (1≤m≤2) single coating films. When a reference film thickness of the first coating film is d1 and a reference film thickness of the second coating film is d2, a film thickness of an i (2≤i≤n)-th coating-film pair is expressed as pid1+pid2 using a weighting coefficient pi. When a reference film thickness of a j (1≤j≤m)-th single coating film is dk(k=j+2), the reference film thickness dk is identical to either d1 or d2. The refractive index of the j-th single coating film is nk, and the refractive index nk is different from the refractive indices n1 and n2.SELECTED DRAWING: Figure 4