47 results about "Mono layer" patented technology

An optical filter includes a first dielectric multilayer film, a resin film, a phosphate glass, and a second dielectric multilayer film. The second dielectric multilayer film includes at least one H2 layer satisfying a refractive index of 1.8 or more and 2.5 or less and a QWOT of 1.1 or more and 3.5 or less, when a layer closest to the phosphate glass in the H2 layers is defined as a first H2 layer, the second dielectric multilayer film comprises a first M2 layer comprising a single layer satisfying a QWOT of 1.2 or more and 1.8 or less or a plurality of layers satisfying a total QWOT of 1.2 or more and 1.8 or less between the first H2 layer and the phosphate glass, and the optical filter satisfies all of the spectral characteristics (i-1) to (i-4).

In this method for manufacturing an optical semiconductor device, a characteristic matrix of a single-layer cover film (12) having a film thickness of [lambda] 0 / 4 / nfl is made equal to a characteristic matrix of a multi-layer cover film (13, 14, 15) using two or more materials in which one material has a refractive index lower than the refractive index nfl and the other material has a refractive index higher than the refractive index nfl, thereby calculating the minimum value Rmin0 of the refractive index. The characteristic matrix of a single-layer cover film (12) having a film thickness of [lambda] 0 / 4 / nfl1 is made equal to the characteristic matrix of a multi-layer cover film (13, 14, 15) using two materials, one of which has a lower refractive index than the refractive index nfl1 and the other one of which has a higher refractive index than the refractive index nfl1, so that the minimum value (Rmin) at the wavelength [lambda] min of the multi-layer cover film (13, 14, 15) matches the minimum reflectance (R0). Multiple layers of cover films (13, 14, 15) are formed on the end surfaces on the basis of the obtained film thicknesses.

This invention provides a method for preparing wafer-level two-dimensional material arrays, specifically relating to the field of two-dimensional atomic crystal material transfer technology. The method includes: preparing a mixed solution according to a preset ratio; preparing a PDMS stamp with multiple PDMS protrusions on its upper surface, arranging the protrusions in a preset pattern; growing a continuous monolayer two-dimensional TMDs film on a growth substrate; bonding the PDMS protrusions of the PDMS stamp to the monolayer two-dimensional TMDs film; separating the monolayer two-dimensional TMDs film from the growth substrate using the mixed solution; peeling off the portion of the monolayer two-dimensional TMDs film outside the contact area with the upper surface of the PDMS protrusions to obtain a patterned monolayer two-dimensional TMDs film; and transferring the patterned monolayer two-dimensional TMDs film onto a target substrate. This method solves the problem of existing technologies being unable to transfer large-size monolayer two-dimensional TMDs films at low cost, high efficiency, and simple simplicity, thus failing to meet the requirements of large-scale grain integration.

The present invention provides a method for constructing a wafer film thickness calibration library, a measurement method and a polishing device. The construction method includes: obtaining a film thickness reflectivity library applicable to a single-layer film environment, wherein the reflectivity value shows a periodic change with the change of the thickness value; obtaining the electrical signals corresponding to the light intensities of the reflected lights of two wafer films with known different thicknesses for a single-wavelength beam; obtaining the electrical signals corresponding to the light intensities of the reflected lights of the two wafer films in a multi-layer film environment for the single-wavelength beam; determining a conversion coefficient according to the electrical signals, the electrical signals, the electrical signals and the electrical signals; and converting the film thickness reflectivity library into a database applicable to a multi-layer film environment by using the conversion coefficient.

The invention discloses a layer thickness self-adaption method and system for 3D printing concrete. The system is used for achieving the method. According to the method, the technical problems that in traditional fixed layer thickness printing, single-layer thickness deviation accumulation is caused by factors such as material fluctuation, and then total height errors of components and uneven layers are caused are solved. The method comprises the steps that after printing of each layer (N layers) is completed, three-dimensional shape information of the upper surface of the layer is obtained through the surface scanning distance measuring unit, and actual height distribution data are generated; comparing actual data with theoretical model slice data, and calculating height deviation information; on the basis of the deviation information, generating a compensation strategy comprising a reference height adjusting instruction for the fine-adjustable printing platform and / or a dynamic adjusting instruction for printing parameters of the next layer (N + 1); and finally, executing the strategy and starting printing of the next layer. Closed-loop feedback control in the printing process is achieved, errors can be compensated layer by layer in real time, and the overall size precision and interlayer quality of a printed component are effectively improved.

1. Name of the product in this design: Automatic Inspection Machine. 2. Purpose of this design: This design is used for defect detection of inner layers, outer layers, single layers, and multilayer circuit boards. 3. The key design features of this product are: the shape of Design 1 in this product; and the combination of the shapes and colors of Design 2 and Design 3 in this product. 4. The picture or photo that best illustrates the key design points: Design 1 3D diagram 1. 5. Design 1 is designated as the basic design.

An optical filter includes a first dielectric multilayer film, a resin film, a phosphate glass, and a second dielectric multilayer film. The second dielectric multilayer film includes at least one H2 layer satisfying a refractive index of 1.8 or more and 2.5 or less and a QWOT of 1.1 or more and 3.5 or less, when a layer closest to the phosphate glass in the H2 layers is defined as a first H2 layer, the second dielectric multilayer film comprises a first M2 layer comprising a single layer satisfying a QWOT of 1.2 or more and 1.8 or less or a plurality of layers satisfying a total QWOT of 1.2 or more and 1.8 or less between the first H2 layer and the phosphate glass, and the optical filter satisfies all of the spectral characteristics (i-1) to (i-4).

The present invention provides a mask blank (100) that utilizes a light-shielding film (2) composed of a single-layer film formed of a silicon nitride-based material to have high light-shielding performance for ArF exposure light and can reduce the EMF deviation of the pattern of the light-shielding film. The mask blank has a light-shielding film on a translucent substrate (1). The optical density of the light-shielding film for ArF exposure light is greater than 3.0. The refractive index n and attenuation coefficient k of the light-shielding film for ArF exposure light simultaneously satisfy the relationship defined by the following formulas (1), (2) and (3), n≦0.0733×k 2 +0.4069×k+1.0083···Formula (1), n≧0.0637×k 2 -0.1096×k+0.9585···Formula (2), n≧0.7929×k 2 -2.1606×k+2.1448···Formula (3).

The utility model belongs to the technical field of insulating layers, and particularly relates to a composite precise insulating layer structure, which adopts an atomic deposition system, a first layer adopts a precursor source and a metal source to form a high refractive index layer; the second layer adopts a precursor source and a metal source to form a low-refractive-index layer; the third layer to the N layer adopt precursor sources to alternately form a periodic refractive index gradient structure, the total layer number N is larger than or equal to 3, the single-layer thickness is lambda / (4n), lambda is the target regulation and control optical wavelength, and n is the film layer refractive index. According to the utility model, more than three layers are alternately stacked, so that films with high and low refractive indexes can be obtained through insulating layers formed by different precursor sources, and as a Bragg structure, the reflectivity is improved; in addition, the third layer starts to form a gradient structure with a periodic refractive index, and the regulation and control requirements of the light-emitting device on light overflow and light reflection are facilitated.

A reflective photomask including a substrate, a multilayer reflection film, a protection film and a pattern of a light absorbing film is provided. The protection film has an extinction coefficient of 0.018 to 0.035, and a thickness of 1 to 6 nm, the light absorbing film is constituted of a single layer or multiple layers, the single layer or each layer of the multiple layers is composed of a material that contains ruthenium and platinum, and has a ruthenium content of 30 to 70 at %, a platinum content of 30 to 70 at %, and a total content of ruthenium and platinum of not less than 96 at %, the light absorbing film has a thickness of 32 to 38 nm, and a reflectance of 1 to 8% and a phase shift of 190 to 240 degrees, with respect to exposure light being light in extreme ultraviolet range.

An optical semiconductor device (500) according to the present disclosure has a wavelength λd and an effective refractive index nc, the optical semiconductor device being characterized by comprising an antireflection film (40) that is formed on an end surface of the optical semiconductor device and is composed of a plurality of covering films, wherein: the plurality of covering films are constituted by m (m ≥ 1) single covering films and n (n ≥ 2) covering film pairs that are each constituted by both a first covering film composed of a first material having a refractive index n1 lower than nc 1 / 2 and a second covering film composed of a second material having a refractive index n2 higher than nc 1 / 2; if the first covering films each have a reference film thickness d1 and the second covering films each have a reference film thickness d2, the film thickness of the i-th (2 ≤ i ≤ n) covering film pair is represented by pid1+pid2 by using weighting factor pi; and if the j-th single covering film has a reference film thickness dj (3 ≤ j ≤ m+2), the reference film thickness dj is the same as the reference film thickness d1 or the reference film thickness d2, the refractive index of the j-th single covering film is nj, and the film thickness thereof is represented by qjdj by using weighting factor qj.

Provided is a microporous film which has a surface A and a surface B opposite to the surface A. In one embodiment, the microporous film has a ratio (FB / FA) of a dynamic friction coefficient FB of the surface B to a dynamic friction coefficient FA of the surface A of 1.2 to 20. In another embodiment, the microporous film is a single layer having a thickness of 3-18 μm, a number NA of pores on the surface A is 10-100 / μm2, a number NB of pores on the surface B is 20-200 / μm2, and NA / NB is 0.2-0.96. In addition, a total area SA of pores on the surface A is 0.02-0.5 μm2 / μm2, a total area SB of pores on the surface B is 0.01-0.3 μm2 / μm2, and SA / SB is 1.1-10. Furthermore, in another embodiment, a number WB of protrusion-like bodies on the surface B is 0.2-1000 / 100 μm2.

An optical semiconductor device is provided in which the thickness of each coating film of an antireflection film made up of a multilayer coating film can be easily determined. The optical semiconductor device 500 of the present disclosure has an effective refractive index n c and the anti-reflection coating 40 is made up of a plurality of coating films, and the plurality of coating films are c 1 / 2 a first coating film made of a first material having a refractive index n1 smaller than n c 1 / 2 The film is composed of n (n≧2) coating film pairs, each pair consisting of a second coating film made of a second material with a refractive index n2 greater than 1, and m (1≦m≦2) single coating films. If the reference film thickness of the first coating film is d1 and the reference film thickness of the second coating film is d2, the film thickness of the ith (2≦i≦n) coating film pair is calculated by a weighting coefficient p i Using p i d1+p i d2, and the reference thickness d of the jth (1≦j≦m) single coating film k If (k=j+2), the reference film thickness d k is equal to either d1 or d2, and the refractive index of the jth single coating is n k and the refractive index n k is different from the refractive indices n1 and n2.

A film-like adhesive containing a thermosetting resin component and a filler, in which the film-like adhesive has a single layer structure including a first surface and a second surface, and has a region A in the vicinity of the first surface, the region in which a content of the filler decreases in a direction from the second surface toward the first surface, and a region B in which the content of the filler does not substantially change in a direction from the region A toward the second surface, in which when the film-like adhesive is cured, the film-like adhesive satisfies Formula (1) below:a×(b / c)>5⁢0(1)in which a thickness of a region A after thermal curing is a (nm), an elastic modulus of a region B is b (Pa), and an elastic modulus at a cleaved surface of mica is c (Pa).

The application discloses a device and a method for preparing a colloidal quantum dot monolayer film in a roll-to-roll mode, which comprises a spreading groove, a solution spreading assembly and a roll-to-roll transfer mechanism, the roll-to-roll transfer mechanism is composed of a flexible substrate, a driving roller, a driven roller and two guide rollers, supports are arranged at four corners of the spreading groove, the two ends of the driving roller are respectively installed on the two supports on the left side of the spreading groove, the two ends of the driven roller are respectively installed on the two supports on the right side of the spreading groove, the two guide rollers are installed in the spreading groove, a fixing frame is arranged in the spreading groove, the solution spreading assembly is fixed on the inclined surface of the fixing frame in the spreading groove, the solution spreading assembly is composed of a silicon wafer, a glass sheet and a capillary tube, one end of the flexible substrate is fixed on the driven roller and sequentially passes through the two guide rollers, the other end is fixed on the driving roller, and the spreading groove contains a liquid carrier. The application can quickly and efficiently prepare a large-area quantum dot monolayer film.

Provided is an optical element which has a retarder layer that achieves uniform retardation despite a non-planar optical surface of the optical element and which does not require complicated steps for fabrication. The optical element 10 includes a substrate 11 having a non-planar optical surface 11a, and a retarder layer 12 on the optical surface 11a. The retarder layer 12 has a uniform retardation value throughout the layer and is composed of a single layer. The optical element 10 may lack a molecule alignment mechanism to promote retardation in the retarder layer 12.

An apparatus and method for designing a multilayer film are disclosed. The apparatus for designing a multilayer film may perform: modeling a multilayer film to be designed as a single-layer structure having a preset thickness; collecting physical property data about the film corresponding to the single layer structure; reading a value pre-stored in a storage space accessible to a device for designing the multilayer film, and obtaining a feature setting mode for specifying different feature setting modes according to the read value; performing feature setting based on a plurality of physical indicators selected from the physical characteristic data according to a feature setting mode; selecting at least one of a plurality of supervised learning models capable of performing regression analysis as a machine learning model; predicting a dart impact strength of the multilayer film by using a machine learning model learned by using the feature as an independent variable and a dart impact strength of the multilayer film as a target variable; and generating design data on the multilayer film by combining the predicted values on the other characteristics and the predicted value on the falling dart impact strength so as to meet the design requirements of the multilayer film.

The invention belongs to the technical field of electronic functional materials and devices, and particularly relates to a PZT-based composite film with a wide-temperature-range negative electrocaloric effect, the PZT-based composite film with the wide-temperature-range negative electrocaloric effect is obtained by alternately overlapping a TiO2 component layer, an Hf0. 5Zr0. 5O2 component layer, a PbO component layer and a PbZrxTi1-xO3 component layer in sequence, x represents a mole fraction and is larger than or equal to 0.20 and smaller than or equal to 0.60, and each component layer is a single-layer sheet or is formed by overlapping multiple layers of sheets. The invention also provides a preparation method of the PZT-based composite film. According to the method disclosed by the invention, the large electrocaloric effect is effectively excited by regulating and controlling the defect dipole, so that the PZT-based composite film has the effect of the negative electrocaloric effect in a wide temperature range.

The invention provides a single-layer-structure cooling soft film for a display screen and a preparation method of the single-layer-structure cooling soft film, and belongs to the field of radiation refrigeration. The cooling soft film comprises a release film layer, a silica gel layer, a base material layer, a hardened coating, a spectrum regulation and control cooling layer and a hydrophobic coating which are sequentially stacked from bottom to top, wherein the total number of the spectrum regulation and control cooling layers is larger than or equal to 8, the spectrum regulation and control cooling layers comprise high-refractive-index layers and low-refractive-index layers which are alternately stacked, and the low-refractive-index layers are adjacent to the hardened coating. The high-refractive-index layer and the low-refractive-index layer are dielectric film layers and do not contain metal layers. The hydrophobic coating is formed by mixing an AF anti-fingerprint agent and an HC component and then coating the mixture. The total thickness of the cooling soft film is 60-200 [mu] m (the thickness of a use layer); according to the invention, the transmittance at the wave band of 0.4-0.76 [mu] m is greater than 90%, the weighted (weighted AM1.5 solar radiation energy) reflectivity at the wave band of 0.76-1.4 [mu] m is greater than 35%, functions of an under-screen infrared sensor can be realized, the emissivity at the wave band of 8-13 [mu] m reaches more than 90%, and low visual chromatic aberration is realized at different reflection angles.

The invention belongs to the technical field of optical coating, and particularly relates to an oil-stain-resistant ultra-black film structure which comprises a base material, a bonding layer deposited on the surface of the base material through ALD, a light absorption layer deposited on the surface of the bonding layer through ALD and an oil-stain-resistant layer deposited on the surface of the light absorption layer through ALD. The oil-resistant layer is at least one of a fluorine-containing compound, a hydrophobic SiO2 nanostructure and an organic-inorganic hybrid layer, and the oil contact angle of the oil-resistant layer is gt; and 90 degrees. In order to solve the problem that the prior art is difficult to be compatible with the optical performance, the uniformity and the oil stain prevention function of the ultra-black film, the ultra-black film with a substrate / bonding layer / light absorption layer (single-layer or multi-layer) / oil stain prevention layer (single-layer or multi-layer) structure is prepared by adopting an atomic layer deposition technology. The technology has the remarkable advantages in the aspects of accurate control over the film thickness, film thickness uniformity, the coverage degree of components in complex shapes and the like, and the obtained ultra-black film can achieve the effects of high absorption efficiency (larger than or equal to 99%), high coverage rate and oil stain resistance.

The application discloses a composite film based on a polar topological domain structure, a ferroelectric memory and a preparation method thereof, and belongs to the technical field of ferroelectric materials. The composite film comprises a dielectric layer and a ferroelectric layer, the dielectric layer comprises a dielectric material, the ferroelectric layer comprises a ferroelectric material, and the ferroelectric layer is arranged in parallel on the surface of the dielectric layer; one of the dielectric layer and the ferroelectric layer is grown on the surface of the other layer; the thickness of the dielectric layer is X times the thickness of a single unit cell layer of the dielectric material, the thickness of the ferroelectric layer is Y times the thickness of a single unit cell layer of the ferroelectric material, 0.5 < Y / X < 10, and the thickness of the composite film is not more than 30 nm. The application can realize the preparation of a single-layer polar Sgmin-like topological nanodomain in an ultrathin composite film, and can prepare a ferroelectric memory with high density, high response speed and low energy consumption.

Multilayer metrology systems and methods are described. The prior art is configured to measure a bottom grating of a metrology target (e.g., a single layer grating of an overlay target) to determine a reference position of a layer (n) only with respect to another layer in the stack of semiconductor layers. In accordance with a product or layer, the present systems and methods are configured to facilitate alignment of layer n (or an average of both) on layer n-1 or layer n-2, and / or extract overlay information from these previous layers to improve alignment and / or other metrology determinations. The present systems and methods are configured to align a plurality of subsequent layers to the same metrology mark, even if the mark includes two or more gratings that directly overlap one another, and to perform alignment, overlay, and / or other metrology operations using the same physical mark.

A photomask blank including a transparent substrate, a film composed of a material containing chromium, and a film composed of a material containing tantalum is provided. The film composed of a material containing tantalum is constituted of a single layer or multiple layers, and has a thickness of 0.5 to 15 nm; the material containing tantalum contains tantalum, and oxygen or oxygen and nitrogen, and is free of silicon; the single layer and at least the layer remotest from the transparent substrate among the layers constituting the multiple layers are composed of a material containing tantalum that has a tantalum content of 40 to 80 at %, an oxygen content of 5 to 50 at %, and a nitrogen content of not more than 50 at %; and the layer remotest from the transparent substrate has a thickness of not less than 0.5 nm.

The application discloses a wear-resistant MgCuY / Cu amorphous / crystal multilayer film and a preparation method and application thereof, and comprises an amorphous MgCuY layer and a metal Cu layer which are alternately stacked by adopting a magnetron sputtering technology; the atomic percentage of each element in the MgCuY layer is as follows: Mg is 80%-88%, Cu is 3%-8%, and Y is 9%-12%; the single-layer thickness of the MgCuY layer is 4 nm, the single-layer thickness of the metal Cu is 4-32 nm, and the total thickness of the multilayer film is 0.84-1.06 microns. The hardness is higher than that of a pure Cu film and a MgCuY amorphous film, and the wear resistance is obviously improved compared with the pure Cu film.

The purpose of the present invention is to provide a double-sided adhesive film which has a generally equal elongation in the XY (longitudinal and transverse) directions, more preferably in the thickness direction, while being prevented from the occurrence of adhesive protrusion or glue burr, and which has higher adhesive force and higher holding power in comparison to similar single-layer adhesive articles, while being applicable to a stretchable or flexible adherend. A double-sided adhesive film according to the present invention is a substrate-less double-sided adhesive film which is composed of a center layer that is formed of a resin adhesive, and adhesive layers that are superposed on the front surface and the back surface of the center layer, said adhesive layers being formed of a resin that is the same as or similar to the resin that constitutes the center layer, wherein the weight average molecular weight or the crosslinking degree of the resin that constitutes the center layer is higher than the weight average molecular weight or the crosslinking degree of the resin that constitutes the adhesive layers. This double-sided adhesive film is characterized in that the tolerance between the elongation in the longitudinal direction and the elongation in the transverse direction is ±20% or less relative to one of the elongations, more preferably, the elongation in the longitudinal direction and the elongation in the transverse direction are equal to each other.

The invention relates to a photomask blank and a method for manufacturing a photomask. Specifically, the present invention provides a photomask blank including a transparent substrate, a film formed of a chromium-containing material, and a film formed of a tantalum-containing material. The film formed by the tantalum-containing material is composed of a single layer or a plurality of layers and has a thickness of 0.5-15 nm; the tantalum-containing material contains tantalum and oxygen or contains tantalum, oxygen and nitrogen and does not contain silicon; at least the layer, farthest from the transparent substrate, in the single layer and the layers forming the multiple layers is made of a tantalum-containing material, the tantalum content of the tantalum-containing material is 40-80 at%, the oxygen content is 5-50 at%, and the nitrogen content is not larger than 50 at%; and the layer farthest from the transparent substrate has a thickness of not less than 0.5 nm.

An apparatus and method for designing a multilayer film is disclosed. An apparatus for designing a multilayer film may perform: modeling a multilayer film to be designed as a single layer structure having a preset thickness, collecting physical property data with respect to a film corresponding to the single layer structure, reading a value pre-stored in a storage space accessible by an apparatus for designing a multilayer film, and obtaining a feature setting mode for designating different feature setting manners depending on the read value, performing feature setting based on a plurality of physical indicators selected from the physical property data, depending on the feature setting mode, selecting at least one among a plurality of supervised learning models capable of a regression analysis as a machine learning model, predicting the dart impact strength of the multilayer film by using the machine learning model learned by taking the feature as an independent variable, and a dart impact strength of the multilayer film as a target variable, and generating design data for the multilayer film, by combining predicted values for other properties and a predicted value of the dart impact strength, so as to satisfy the design requirements of the multilayer film.

An optical filter includes a first dielectric multilayer film, a resin film, a phosphate glass, and a second dielectric multilayer film. The second dielectric multilayer film includes at least one H2 layer satisfying a refractive index of 1.8 or more and 2.5 or less and a QWOT of 1.1 or more and 3.5 or less, when a layer closest to the phosphate glass in the H2 layers is defined as a first H2 layer, the second dielectric multilayer film comprises a first M2 layer comprising a single layer satisfying a QWOT of 1.2 or more and 1.8 or less or a plurality of layers satisfying a total QWOT of 1.2 or more and 1.8 or less between the first H2 layer and the phosphate glass, and the optical filter satisfies all of the spectral characteristics (i-1) to (i-4).

The invention relates to a phase difference film, a preparation method thereof and a polaroid, the phase difference film comprises a lambda / 4 phase difference part, R450 / R550 of the phase difference film is larger than 0.5 and smaller than 1, and R650 / R550 of the phase difference film is larger than 1.01 and smaller than 1.50. According to the phase difference film with the lambda / 4 phase difference part single-layer structure, the mechanical structure is simplified, and the manufacturing cost is reduced; meanwhile, the R450 / R550 of the selected phase difference film is larger than 0.5 and smaller than 1, the R650 / R550 of the selected phase difference film is larger than 1.01 and smaller than 1.50, and through phase difference adjustment of a wide wave domain, the mirror image reflectivity is reduced, and the display effect of the display device is improved.