10 results about "PDMS stamp" patented technology

This invention provides a method for preparing wafer-level two-dimensional material arrays, specifically relating to the field of two-dimensional atomic crystal material transfer technology. The method includes: preparing a mixed solution according to a preset ratio; preparing a PDMS stamp with multiple PDMS protrusions on its upper surface, arranging the protrusions in a preset pattern; growing a continuous monolayer two-dimensional TMDs film on a growth substrate; bonding the PDMS protrusions of the PDMS stamp to the monolayer two-dimensional TMDs film; separating the monolayer two-dimensional TMDs film from the growth substrate using the mixed solution; peeling off the portion of the monolayer two-dimensional TMDs film outside the contact area with the upper surface of the PDMS protrusions to obtain a patterned monolayer two-dimensional TMDs film; and transferring the patterned monolayer two-dimensional TMDs film onto a target substrate. This method solves the problem of existing technologies being unable to transfer large-size monolayer two-dimensional TMDs films at low cost, high efficiency, and simple simplicity, thus failing to meet the requirements of large-scale grain integration.

This invention discloses a high-resolution quantum dot light-emitting device based on capillary self-assembly using a sacrificial layer and nanoimprinting, and its fabrication method. The method first prepares a hole injection layer and a hole transport layer on a substrate. A sacrificial layer and a charge blocking layer are then prepared on a PDMS soft stamp. A via array is formed on the charge blocking layer, and the sacrificial layer is pressed into the top of silicon pillars, forming a quantum dot light-emitting pixel array. Next, the PDMS stamp containing the quantum dot pixels is flipped over and hot-pressed onto the hole transport layer, and the sacrificial layer is removed by selective solvent dissolution. Finally, an electron transport layer and a top electrode are sequentially prepared on the structure to complete the construction of the QLED device. This invention utilizes a soft stamp and sacrificial layer process to achieve photolithography-free, high-precision, and damage-free quantum dot pixel patterning, effectively solving problems such as low resolution, pixel color mixing, and quantum dot damage in traditional processes. It is particularly suitable for fabricating high-resolution, full-color quantum dot light-emitting diodes.

Disclosed is a silver nanowire patterning method including patterning an adhesive conductive polymer thin-film on a substrate, fabricating a polydimethylsiloxane (PDMS) stamp coated with a silver nanowire thin-film, and bonding the substrate patterned with the conductive polymer thin-film to the PDMS stamp coated with the silver nanowire thin-film and then separating the two bonded substrates.

The application discloses a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials. By modulating the resonance coupling between a photonic crystal microcavity and a quantum dot light-emitting wavelength, a continuous spectrum laser light source is realized. The preparation method of the photonic crystal microcavity is as follows: a PDMS stamp with a special periodic arrangement shape is prepared in advance, HPC material is spin-coated on the light-emitting electrode side of a bottom-emitting quantum dot device, the prepared PDMS stamp is used to press a periodic arrangement pattern, then optical material is spin-coated and deposited on the pattern, and the HPC material is washed away with a solvent after spin-coating, so that a photonic crystal microcavity with a certain periodic air hole is obtained. The modulation of the optical properties of the photonic crystal microcavity can be realized by adjusting the PDMS stamp template. The method can construct a photonic crystal microcavity with a specific energy band structure on the light-emitting side of the bottom-emitting quantum dot device, so that a high-brightness and high-quality laser light source is obtained.

The present application relates to a kind of PVDC-based batch dry transfer two-dimensional material method, comprising the following steps: S1.PDMS micro dome array is prepared using multistage tungsten needle array spotting method;S2.PDMS micro dome array is surface activated;S3.PVDC-based polymer solution is dropped on the surface of PDMS micro dome array, film coating is carried out using spin coater, and PVDC film is formed on the surface of PDMS after solidification, and PVDC / PDMS stamp array is prepared;S4.utilize stamp array, batch pickup two-dimensional material prepared on substrate in advance respectively, and form multilayer heterojunction array on stamp array;S5.stamp array with multilayer heterojunction array is released on target substrate, so that the batch transfer of two-dimensional material is completed.The present application has the advantages of low operating temperature, high yield, interface clean and the like, and can realize the efficient batch assembly of van der waals heterojunction.

The embodiment of the present application provides a kind of to two-dimensional atomic crystal material transfer technical field, with a kind of preparation patterned monolayer two-dimensional material method, the method comprises: preparation upper surface has multiple PDMS protrusions patterned PDMS stamp, and make multiple PDMS protrusions with preset pattern style arrangement;Continuous monolayer two-dimensional TMDs film is grown on film substrate;The monolayer two-dimensional TMDs film is transferred to the upper surface of the PDMS protrusion, and patterned monolayer two-dimensional TMDs film is obtained;The patterned monolayer two-dimensional TMDs film is transferred to target substrate, and patterned monolayer two-dimensional material is obtained.The patterned monolayer two-dimensional material is transferred by the method, and the problems that two-dimensional material patterning and two-dimensional material transfer process in prior art are complex, cost is high, time-consuming long are solved.

According to the heterogeneous integration method and structure of the quantum dot film, a water-soluble PVA film is introduced to serve as an intermediate transfer medium, elastic supporting and controllable stripping of a PDMS stamp are combined, complete, lossless and large-area transfer printing of the patterned quantum dot film from a native semiconductor substrate to a heterogeneous target platform is achieved under the low-temperature and non-bonding conditions, and the quantum dot film is obtained. Therefore, the problems that the transfer size is limited and the success rate is low due to insufficient adhesive force of a traditional PDMS stamp pickup method, and an inverted bonding method is complex in process, pollutes an interface and is high in cost are solved, and a heterogeneous integration approach with low cost, high degree of freedom, high reliability and high efficiency is provided for a light quantum chip and a hybrid photonic device.

Disclosed in the present invention is a preparation method for preparing a micro-nano structure pattern on the surface of a 3D cambered-surface substrate, comprising: placing a 3D cambered-surface substrate on a spin-coating platform provided with a cambered-surface boss, and spin-coating a layer of nanoimprint resist on the surface of the 3D cambered-surface substrate; placing the 3D cambered-surface substrate on an imprinting platform provided with a cambered-surface boss, and using a PDMS stamp having a reverse structure to imprint the nanoimprint-resist coated surface of the 3D cambered-surface substrate so as to form a mask having a micro-nano structure pattern; placing, on an etching tray provided with a cambered-surface boss, the 3D cambered-surface substrate provided with the mask having the micro-nano structure pattern, and then placing the etching tray into an ICP dry-etching device for etching; and cleaning the etched 3D cambered-surface substrate, wherein the outer contour of each cambered-surface boss is matched with that of the 3D cambered-surface substrate. The present invention can implement preparation of a micro-nano structure pattern on the surface of a 3D cambered-surface substrate, can achieve mass production, and has controllable costs.

The invention discloses a nanoimprint-based ultrahigh-resolution ultrahigh-pixel-density quantum dot display device manufacturing process, and relates to the field of photoelectric display, and the nanoimprint-based ultrahigh-resolution ultrahigh-pixel-density quantum dot display device manufacturing process comprises the following steps: preparing a nanoscale concave pattern PDMS seal; a matrix Wheatstone bridge array is prepared on the back of the substrate, and the front of the substrate is covered with a polar material and pressed with a seal; the pressure distribution of the whole board is monitored in real time through a bridge array in the imprinting pressure maintaining stage, and the pressure is dynamically and finely adjusted in combination with a distributed piezoelectric actuator, so that the uniformity is ensured; and annealing, separating the seal, spin-coating an insulating material, depositing a functional layer (from a hole injection layer to a metal cathode), packaging a thin film, and etching to remove the bridge array on the back surface to obtain a clean display device. According to the process, through back sensing and active feedback control, the pressure fluctuation is controlled within the target value + / -5%, the yield is improved by 20% or above, the physical precision limitation of equipment can be broken through without ultrahigh-precision hardware, and the flexible substrate manufacturing requirement is met.