Device for establishing single-cell level connection between neurons and growth connecting method

A technology of horizontal connection and nerve cells, applied in tissue cell/virus culture devices, biochemical equipment and methods, microorganisms, etc., can solve the problem of low repeatability, the inability of nerve cells to reach the single-line connection, and the inability to reach the level of single cells And other issues

Inactive Publication Date: 2010-06-23
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art that when controlling the growth of nerve cells by patterning, it is to control the entire neural network, which cannot reach the level of single cells, and the connection between nerve cells cannot reach the single-line conne

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for establishing single-cell level connection between neurons and growth connecting method
  • Device for establishing single-cell level connection between neurons and growth connecting method
  • Device for establishing single-cell level connection between neurons and growth connecting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] 1) Photolithography: use photolithography technology to prepare silicon wafers with microstructure unit 1 and microstructure unit 2 respectively. First use the graphic software L-edit to design two required patterns. The microstructure unit one includes linear grooves arranged in parallel, with a width of 5 microns (5-10 microns are all available) and a pitch of 50 microns (20 microns). -100 microns are acceptable).

[0064] The second microstructure unit has at least one set of convex linear microstructure units, and the convex linear microstructure unit includes: a straight middle convex line; located on the left or right side of the straight middle convex line at least one linear side convex line; the straight side convex line does not intersect with the straight middle convex line; The direction of the linear convex line is inclined; the length of the straight central convex line and the linear side convex line is 1.5 cm (1.5-2 cm) and the width is 40 microns; two ...

Embodiment 2

[0075]1) Photolithography: use photolithography technology to prepare silicon wafers with microstructure unit 1 and microstructure unit 2 respectively. First, use the graphic software L-edit to design the two required patterns. The microstructure unit 1 includes multiple groups of linear grooves arranged in parallel, with a width of 5 microns (5-10 microns are acceptable) and a pitch of 50 microns. (20-100 microns are acceptable). The microstructure unit two includes at least one group of convex linear microstructure units, and the convex linear microstructure unit includes: a straight convex line (convex line one), an oblique convex line, (convex line 2); the middle section of the convex line 1 and the convex line 2 do not intersect, the shortest distance is 500 microns, and the longest distance is 1000 microns; the two ends of the convex line 2 are away from the middle The direction of the convex line is inclined; the length of the convex line is 1.5 cm (1.5-2 cm is accepta...

Embodiment 3

[0086] 1) Photolithography: use photolithography technology to prepare silicon wafers with microstructure unit 1 and microstructure unit 2 respectively. First use the graphic software L-edit to design the two required patterns, the microstructure unit-including multiple sets of parallel-arranged linear grooves, the width is 5 microns (5-10 microns are acceptable), and the spacing is 50 microns (20-100 microns are acceptable). Microstructure unit two includes at least one group of convex line microstructure units, and the convex line microstructure unit includes three straight line convex lines (convex line one, convex line two, and convex line three); Said convex line one is located in the middle of convex line two and convex line three, and the middle sections of convex line one, convex line two and convex line three are parallel, with a distance of 500 microns; said convex line two, convex line The two ends of the third middle section are inclined to the direction away from...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a device and a method for establishing single-cell level connection between neurons; the device comprises a basement whose upper surface is provided with protein band, and the region outside the protein band at the basement is covered by a polyether F127 layer; a PDMS stamp which is covered to the upper surface of the basement and whose lower surface is provided with a micro-groove unit; the micro-groove unit comprises: a linear type intermediate groove and at least one linear type side groove which is arranged at the left side or/and the right side of the intermediate groove, the middle section of the side groove does not intersect with the intermediate groove, and two end sections outside the middle section of the side groove incline to the direction away from the intermediate groove; the groove end is provided with a vertical hole channel; the protein band intersects with the groove without superposition; neurons are sent into the channel and only adhere to the protein band, the neurite directionally grows along the protein band without branching, thereby obtaining single-line connection of neuron single-cell level; the structure is simple, the operation is easy, and the orderly growth of the neurite can be controlled, and the electrical signal transduction between the neurocytes can be precisely studied, furthermore, the invention provides foundation support for manufacturing of bio-sensors.

Description

technical field [0001] The invention relates to a device and a growth method for controlling patterned growth of nerve cells at the single cell level, in particular to a device and a growth connection method for establishing single cell level connections between neurons. Background technique [0002] Neurons are composed of cell bodies and nerve fibers, and are the basic units that constitute the structure and function of the nervous system. The function of neurons depends on the connection and information exchange between neurons, and this information exchange is completed through the conduction of nerve electrical signals between nerve fiber networks. Therefore, the study of the mechanism of electrical signal transmission between neurons is the basis for understanding the function of neurons. However, in the traditional culture method, there are many protrusions on the surface of each neuron, and these protrusions send out a large number of branches to form a network stru...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C12M3/00C12N5/00
Inventor 蒋兴宇邢仕歌袁博王栋谢赟燕
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap