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Research method for relaxation phenomenon of polymer via patterned charge mark

A patterning, polymer technology, applied in measurement devices, instruments, scanning probe microscopy, etc., can solve the problem of inability to observe the movement and relaxation process of polymer molecular segments in real time

Inactive Publication Date: 2016-02-24
RENMIN UNIVERSITY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the data obtained in the study of macroscopic dielectric materials are often statistical results, which are collective average effects within the macroscale range, and it is impossible to observe the movement and relaxation process of polymer molecular segments in real time at the microscale.

Method used

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  • Research method for relaxation phenomenon of polymer via patterned charge mark
  • Research method for relaxation phenomenon of polymer via patterned charge mark
  • Research method for relaxation phenomenon of polymer via patterned charge mark

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, the preparation of polymer film and the construction of patterned charge

[0039] Polystyrene (PS) and polymethyl methacrylate (PMMA) were respectively dissolved in toluene to prepare a 2wt% solution. Drop the polymer solution on a single-sided polished silicon wafer, and spin coat it through a coating machine to form a film, and the speed is set at 6000r min -1 , the time is 1min. After taking it off, dry it in an oven at 100° C. for 1 hour to obtain a polymer film.

[0040] Preparation of PDMS stamps: firstly obtain a silicon wafer with a certain pattern by micromachining, then obtain a PDMS plate with a micro-nano pattern structure on the surface by means of contact reprinting, and obtain a specific seal by plating the upper and lower surfaces of the PDMS plate with gold. Micro-nano-patterned PDMS stamp.

[0041] The surface of the polymer film is injected with electricity by an external power source, according to figure 1 Inject electricity accord...

Embodiment 2

[0044] The relaxation phenomenon of embodiment 2, PMMA under temperature stimulation

[0045] In this embodiment, the polymer used is polymethyl methacrylate (PMMA), and the heating temperature of the hot stage is 200°C. The glass transition temperature (Tg) of PMMA is 122°C. The reason why the temperature of the hot stage is set to 200°C, which is obviously higher than the Tg temperature of PMMA, is to complete the reaction of the polymer film in a very short heating time. During the infiltration movement process, if the heating time is longer, the charge will decay rapidly, so that the relaxation movement of the polymer under the action of the charge will be weakened.

[0046] Study the relaxation phenomenon of the PMMA film (thickness is 40nm) prepared in Example 1 with patterned charge under temperature stimulation, and observe the following phenomenon: the charging time is different, and the polymer pattern has different surface potentials. Samples with different surface...

Embodiment 3

[0048] Embodiment 3, the relaxation phenomenon of PS under temperature stimulation

[0049] Since there is no hydrogen bond interaction between PS chain segments and the intermolecular force is relatively weak, PS with a small molecular weight (Mn=5,000) is also selected in this embodiment.

[0050] Study the relaxation phenomenon (i.e. the dewetting process of the surface of the PS film) of the PS film (thickness is 30nm) with the patterned charge prepared in Example 1 under temperature stimulation, and observe the following phenomenon: for smaller molecular weight, the chain segment For the shorter PS, after the polymer films charged for 5s and 30s were annealed on a hot stage at 200 °C, polymer arrays with different depths were obtained. At the same time, the higher the surface potential, the more intense the relaxation of the polymer, and the more obvious the resulting microstructure. from Image 6 It can be seen that the patterned array ( Image 6 (b)) than charging fo...

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Abstract

The invention discloses a research method for the relaxation phenomenon of a polymer via a patterned charge mark. The method comprises the following steps that 1) a PDMS stamp is used to carry out patterned injection on a polymer film, a charge pattern is formed at the surface of the polymer film, the PDMS stamp includes a PDMS template whose surface includes a micro-nano pattern structure, and both the upper and lower surfaces of the PDMS stamp are plated with metal; and 2) the relaxation phenomenon of the polymer film under the temperature or solvent simulation condition is researched. According to the method provided by the invention, the patterned static charge can serve as a mark in the micro scale, contrast of related parameters of an injection area and a non-injection area in the relaxation process can be observed in real time and measured quantitatively, the method is more visual to observe the dielectric relaxation difference, and experimental and theoretical basis is provided for aging and failure analysis under the electric field effect when the polymer serves as an engineering material.

Description

technical field [0001] The invention relates to a method for studying relaxation phenomena of polymers by using patterned charge labels, which belongs to the field of polymer material science. Background technique [0002] Most high molecular polymers are good insulators with excellent electrical insulation properties. These polymer insulating materials have high resistivity, low dielectric loss under the action of an applied electric field, high breakdown electric field strength and high frequency resistance, so they are widely used as dielectric materials in the electrical industry Materials and electrical insulation materials, such as electrical insulation fields such as transformers, UHV switches, energy storage capacitors, wires and cables, as well as micro-stack insulation materials in dielectric wall accelerators, insulation layers in organic field effect transistors, etc. (S.Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe. Appl. Phys. Lett., 1996, 68, 1377.; ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/24
Inventor 吝子红关丽张建平
Owner RENMIN UNIVERSITY OF CHINA
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