Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-resolution biosensor

A biosensor and high-resolution technology, applied in the field of sensors, can solve the problems of insufficient accuracy, high cost, single-base resolution nano-electrode integration, etc., and achieve the effect of avoiding pollution, simple method, and rapid gene electronic sequencing

Inactive Publication Date: 2011-11-16
ZHEJIANG UNIV
View PDF2 Cites 49 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the second-generation gene sequencing technology has improved the sequencing speed, the cost is still too high (about 1 million US dollars) and the accuracy is not enough
However, although the technology for preparing nanopores is relatively mature, there is no technical method to integrate nanoelectrodes with single-base resolution into nanopore systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-resolution biosensor
  • High-resolution biosensor
  • High-resolution biosensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: Preparation of nano functional layer unit

[0023] Such as Figure 5 Shown: (a) Single-layer graphene was transferred onto insulating boron nitride (20 nm), and then an insulating PMMA (polymethyl methacrylate) layer (500 nm) was spin-coated on top of the graphene. (b) Fabrication of nanopores (2 nm) by electron beam etching and etching.

[0024] Effect and analysis: In this embodiment, the first insulating layer uses boron nitride, and the second insulating layer uses polymer PMMA, but in the actual sensor, the first insulating layer and the second insulating layer can also use other insulating materials , such as SiO 2 , Al 2 o 3 , SiN x , BN, SiC, fluorinated graphene, polyvinyl alcohol, poly(4-vinylphenol), polymethylmethacrylate, or divinyltetramethyldisiloxane-bis(benzocyclobutene) A mixture of one or more of them. For the nano-functional layer, not only single-layer graphene can be used, but also double-layer or multi-layer graphene can be us...

Embodiment 2

[0026] Embodiment 2: Preparation of Field Effect Transistor Unit

[0027] Such as Figure 6 Shown: (a) 30 nm thick HfO was prepared on a Si (500 μm) substrate by atomic layer deposition 2 As a dielectric layer for field effect transistors. (b) Transfer of the as-prepared sandwich-like structure to Si (500 μm) / HfO 2 (30 nm). (c) Ti (2 nm) / Au (50 nm) was prepared on a sandwich-like structure by photolithography and etching techniques as the source and drain electrodes of field effect transistors.

[0028] Effect and analysis: In this embodiment, Si with a thickness of 500 μm is used as the substrate, and Si with other thicknesses or other materials such as GaN, Ge, GaAs, SiC, and Al can also be used 2 o 3 , SiN x , SiO 2 , HfO 2 , polyvinyl alcohol, poly(4-vinylphenol), divinyltetramethyldisiloxane-di(benzocyclobutene) or polymethylmethacrylate or a mixture of one or more.

[0029] For the dielectric layer, this example uses HfO 2 , but other dielectric materials such...

Embodiment 3

[0032] Example 3: Preparation of micro-nanofluidic device unit

[0033] Such as Figure 7 Shown: 300 nm SiO grown by thermal oxidation on a 500 μm thick silicon substrate 2 layer; then using photolithography and etching techniques on SiO 2 The first storage chamber (2 mm × 2 mm), the second storage chamber (2 mm × 2 mm) and the micro-nano separation channel (aperture: 200 nm) were prepared in the first layer; finally, the Pt (30 nm) layer as the first electrophoretic electrode and the second electrophoretic electrode.

[0034] Effect and analysis: this example uses Si / SiO 2 To prepare micro-nanofluidic devices, in actual biosensors, the integration of material functions with field-effect transistors can be considered, and different materials can be selectively used. The size and shape of the first and second storage chambers can be determined according to actual conditions; other conductive materials can be used for the first and second electrophoretic electrodes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-resolution biosensor. Specifically, a basic unit consisting of a first insulating layer, a nanometer functional layer and a second insulating layer is provided with a nano-pore in the center, thus forming a nanometer functional layer unit. A first electrophoresis electrode or micropump, a first store room, a second store room, a second electrophoresis electrode or micropump, and a micro-nanometer separation channel constitute a micro-nanometer fluid device unit. The nanometer functional layer unit, a source electrode, a drain electrode, a dielectric layer and a gate electrode compose a field effect transistor unit. When a biomolecule passes through the nano-pore in the micro-nanometer fluid device and interacts with the nanometer functional layer, the field effect transistor unit measures the field effect characteristic change resulted from the interaction, thus reaching the purpose of biomolecule detection. The invention provides a solution to the technical difficulty of integrating the nano-pore in the nanometer functional layer, and can control the form change when a biomolecule passes through the nano-pore, thus meeting the resolution requirements for detecting the biomolecule characteristic and structure. In addition, the manufacturing method of the sensor is simple.

Description

technical field [0001] The invention relates to a sensor, in particular to a high-resolution biosensor. Background technique [0002] Gene sequencing technology is the basic platform technology of biomedical research. The first-generation gene sequencing technology based on the Sanger method must replicate (i.e., amplify) DNA molecules multiple times and perform fluorescent tracer labeling at the same time. Errors come and go, so a gene has to be sequenced many times to get reliable results. And this technology has the disadvantages of slow speed and high cost. Testing a person's genetic sequence through this technology will cost $10-25 million. In order to reduce the cost of gene sequencing, the National Human Genome of the United States launched an innovation program in 2004 to develop new technologies for rapid and low-cost (1,000 US dollars) gene sequencing. In addition, in order to promote the development of new technologies for rapid and low-cost gene sequencing, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C12M1/34G01N27/447
CPCB82Y30/00G01N33/48721B82Y15/00
Inventor 徐明生陈红征吴刚施敏敏汪茫
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com