36 results about "Hot stage" patented technology

The invention discloses a deep fusion unattended intelligent experiment system. The experiment system comprises a microscope heating stage base structure, an XY moving motor, a CCD image acquisition module and a control module. The microscope heating stage base structure is used for placing a loading area of a sample; two groups of high-precision XY moving motors are arranged in the horizontal plane direction of the microscope heating stage and are respectively responsible for the movement of the heating stage in the horizontal transverse X-axis direction and the horizontal longitudinal Y-axis direction; the CCD image acquisition module is used for acquiring microscopic images of a sample in real time; and the control module is connected with the CCD image acquisition module and is used for controlling experiment operation according to the microscopic image. And full-process automatic cycle operation is realized.

An embodiment of this specification provides a hot stage automatic leveling device, including: a reaction chamber in which a hot stage is placed, and an air inlet for introducing reaction gas is provided at the top of the reaction chamber; an adjustment mechanism for adjusting the level and / or position height of the hot stage; an optical detector disposed directly above the air inlet; and a controller that controls the adjustment mechanism to adjust the level of the hot stage according to the signal emitted by the optical detector. By providing a transmit-receive integrated optical detector directly above the air inlet, a first light beam is emitted from the central position of the optical detector to reach the upper surface of the hot stage, and the hot stage reflects the first light beam to form a second light beam. When the hot stage is level, the second light beam reaches the central position of the optical detector, and when the hot stage is not level, the second light beam reaches the edge region of the optical detector. The controller controls the adjustment mechanism to adjust the level of the hot stage according to the signal emitted by the optical detector.

This invention relates to a novel method for preparing lateral 3D / quasi-2D perovskite heterostructures, comprising the following steps: Step S1: Spin-coating a perovskite precursor solution onto a substrate to form a film, followed by annealing and crystallization on a hot stage to form a quasi-two-dimensional perovskite thin film; Step S2: Placing the quasi-two-dimensional perovskite thin film between two metal electrodes, which are respectively used as positive and negative electrodes connected to an external power source to construct an electric field; Step S3: Placing the quasi-two-dimensional perovskite thin film in an electric field strength of 0.1-100 V / μm and subjecting it to light irradiation, causing bulk organic cations (LOCs) to migrate under the simultaneous stimulation of light and electricity, forming a lateral perovskite heterostructure. This invention utilizes the ability of bulk organic cations (LOCs) to migrate under specific conditions and promote the formation of lateral perovskite heterostructures with sharp interfaces, thus obtaining a novel LPHs preparation method different from existing technologies.

The present invention relates to the technical field of chip tooling, specifically a lead bonding chip clamping tooling, which includes a chip fixture table, a movable fastening piece, a clamping component, a fixed fastening piece, as well as a feeding component and a discharging component. Through the setting of the button, as long as the finger presses the button, the fixture can be opened, and when the button is released, the fixture will clamp the chip package; the production efficiency is improved, and the clamping efficiency can be doubled compared with the traditional hot stage; two layers of heat insulation are adopted at the beginning of the tooling design, and the heat insulation effect is very good; a fixing piece is added to the tail of the tooling, and the tooling can be better fixed to the hot stage or other carrier plates with screw holes; the tooling has strong expandability, and this tooling can not only be used for the chip gold wire bonding process, but also for other processes; through the setting of the feeding component and the discharging component of the present invention, the user only needs to press and release the button once to complete the feeding and discharging work at the same time, which is convenient and fast.

The utility model discloses an XY sample displacement adjusting cold and hot table which comprises a cavity and a base, a Y-direction sliding block is installed in the cavity in a sliding mode, an X-direction sliding block is installed on the Y-direction sliding block in a sliding mode, an X-direction adjusting knob for adjusting the X-direction sliding block is installed in the cavity, and a Y-direction adjusting knob for adjusting the Y-direction sliding block is installed in the cavity. The Y-direction sliding block is connected with the displacement adjusting piece through the switching block. A base is installed at the bottom end of the cavity, a flange is installed at one end of the cavity and one end of the base, the flange extends into the cavity, a fixing plate is installed on the flange located in the cavity, insulating ceramic beads are installed on the fixing plate, and a temperature control interface is installed in the middle of the flange. According to the utility model, the upper window cover and the lower window cover are trumpet-shaped, so that a user can adapt to various optical lenses more conveniently; the upper cover is provided with a blowing support, the blowing support is inserted into a blowing pipe to blow the upper surface of the window, and low-temperature frosting is prevented.

A method for improving the nucleation of the γ phase in polyvinylidene fluoride (PVDF), a γ phase PVDF dielectric film based on the nucleation method, and a preparation method thereof are disclosed. The method involves using ceramic powder in the PVDF film material to enhance the nucleation ability of the γ phase crystals, improve the hydrophilicity of the PVDF film, and enhance the high-temperature dielectric properties of the PVDF film material. The dielectric film raw materials include 0-0.2 parts of ceramic powder (NBT), 10 parts of polyvinylidene fluoride (PVDF), and 200-204 parts of N,N-dimethylformamide (DMF). The preparation method is as follows: 1) Using N,N-dimethylformamide... 1) Prepare a 5% ceramic powder / polyvinylidene fluoride solution using amide as a solvent; 2) Drop the solution from step 1) onto a glass slide and cure it into a film in a vacuum oven at 68-72℃; 3) Melt the cured film obtained in step 2) on a hot stage at 200℃-220℃ to eliminate thermal history, and then rapidly cool it to 150-170℃ for isothermal crystallization until the blended film is completely crystallized; The preparation method of the γ-phase polyvinylidene fluoride dielectric film of the present invention is simple, convenient to operate, and has excellent performance, such as high temperature resistance, corrosion resistance, and strong piezoelectricity and ferroelectricity.

The invention relates to a coating and drying all-in-one machine suitable for a perovskite solution, which comprises a coating base, a lead screw, a lead screw driving device, a die head support and a coating die head, a coating platform made of a material with a small infrared ray blocking effect is arranged on the coating base, an infrared heating device is arranged on the coating die head, and the lead screw driving device is arranged on the coating platform. The infrared heating device moves along with the coating die head; the heating and drying device comprises a linear infrared light source, a connecting rod and a rotating device, the linear infrared light source is arranged at the tail end of the connecting rod and located below the coating platform, and the rotating device drives the connecting rod to rotate. According to the invention, the perovskite solution coated on the substrate is heated in real time, so that the wet film is rapidly evaporated and crystallized into the perovskite thin film, the heat accumulation phenomenon in the drying process of a heating stage and the potential safety hazard caused by the heat accumulation phenomenon are avoided, and the uniformity of the perovskite thin film layer is improved. And meanwhile, the coating process and the solvent volatilization process are carried out at the same time through following movement of the infrared heating device, so that the production efficiency is improved.

The invention discloses a power semiconductor device chip active area temperature distribution simulation test method and system, and the method comprises the steps: designing a metal pattern mask according to the cell information of a power semiconductor device chip active area; selecting a semiconductor wafer of which the growth of the semiconductor multilayer structure is completed and the surface semiconductor layer is not doped, and depositing a metal pattern; calibrating a Raman characteristic temperature curve of a semiconductor layer on the surface of the chip sample based on a confocal Raman spectrometer and a heating stage; the bottom face of the chip sample is connected with the device packaging heat dissipation structure, and the metal pattern on the surface of the chip sample is connected into a direct-current power supply loop; adjusting output of the direct-current power supply, simulating heat generation of a heat source in an active area of the chip sample and reaching target heat generation power; and measuring the temperature distribution of the active area of the chip sample according to the calibrated Raman characteristic temperature curve. According to the invention, the simulation test of the junction temperature and temperature distribution of the active area of the chip can be realized in the design and manufacturing process of the power semiconductor device, and the actual performance of thermal design of the power semiconductor device is experimentally evaluated.

A kind of oil-immersed capacitor bidirectional tensile polypropylene electric heating aging experiment system and method, in the method, build electric heating aging experiment cavity, electric heating aging experiment cavity is supported on hot stage, the bottom in electric heating aging experiment cavity is equipped with base support;Wash and dry electric heating aging experiment cavity and BOPP film sample;BOPP film sample is placed in electric heating aging experiment cavity, BOPP film sample is clamped and supported in the base support via ground electrode and high voltage electrode, high voltage electrode and ground electrode are connected to direct current power supply via protection resistance;Electric heating aging experiment cavity is pumped and injects benzyl methyl benzene solution, the BOPP film sample is immersed in the benzyl methyl benzene solution in electric heating aging experiment cavity;Hot stage and direct current power supply are opened, record experiment start time and experimental temperature;After electric heating aging experiment, power off, remove BOPP film sample, BOPP film sample is cleaned with alcohol and then bagged for standby.

The present application discloses a method for measuring the dynamic thermal expansion properties of a nanofilm, which relates to the field of measurement technology. The method is applied to an ellipsometer provided with a temperature-controlled hot stage. The method comprises: controlling the temperature of a thin film sample on the hot stage according to a resonant temperature modulation program, and obtaining a thickness-time curve of the thin film using the ellipsometer; based on the obtained thickness-time curve, determining the amplitude and phase of the resonant dynamic change of the film thickness in response to the temperature modulation program using a digital signal processing method, and obtaining an amplitude-time curve and a phase-time curve; and then determining the apparent thermal expansion coefficient, reversible thermal expansion coefficient, and irreversible thermal expansion coefficient of the thin film sample; the present application measures the thermal expansion behavior of the thin film sample by setting a temperature modulation program, thereby accurately determining the reversible thermal expansion coefficient and its real and imaginary parts, as well as the irreversible thermal expansion coefficient of the thin film sample, thereby accurately reflecting the molecular motion and thermal relaxation behavior of the nanofilm.

The present invention relates to the technical field of oil and fat food testing, and in particular to a rapid evaluation method for the hardness and brittleness of room-temperature baking fats. The rapid evaluation method comprises the following steps: taking the oil phase of the room-temperature baking fat and melting it into a liquid state under heating conditions; dropping the melted oil phase between a glass slide and a cover glass to prepare a test sample; heating the test sample and then cooling it to crystallize the oil phase; placing the test sample on a hot stage of a polarizing microscope, adjusting the hot stage temperature so that the hot stage with the test sample is heated from an initial temperature to 35°C to 40°C after several heating cycles according to a preset temperature gradient; and taking crystallization photographs of the test sample at each temperature during the heating process; wherein the initial temperature is lower than the melting point of the oil phase; reading the grayscale value of the crystallization photographs using software, and determining the hardness and brittleness of the room-temperature baking fat based on the changing trend of the grayscale value of the crystallization photographs during the heating process.

The invention relates to plasma thin film deposition equipment with central air exhaust. The plasma thin film deposition equipment comprises a reaction chamber, a heating stage, a heating stage base, a lifter, an air exhaust device, a first elastic pipeline and a second elastic pipeline, the heating table is divided into a bearing part and a supporting part vertically arranged in the middle of the bottom surface of the bearing part; a first gap is formed between the bearing part and the inner side of the reaction chamber; the bottom end of the supporting part extends out of the bottom of the reaction chamber and is fixedly connected with the heating stage base; a second gap is formed between the supporting part and the bottom of the reaction chamber; the lifter drives the heating stage base to do lifting motion in the direction perpendicular to the bearing part so as to drive the bearing part to do lifting motion; the first elastic pipeline is sleeved outside the extending part of the bearing part and is fixedly connected between the bottom of the reaction chamber and the heating stage base in a sealing manner, and the top surface of the heating stage base is fixedly connected with the air extractor through the second elastic pipeline; the heating stage base is provided with more than one through hole, and the through hole is communicated with the first elastic pipeline and the second elastic pipeline to form an air exhaust channel. The problem of edge deviation effect is effectively solved, and the thickness of the thin film is uniform.

The utility model relates to the technical field of cold and hot experiments, and discloses a cold and hot table which comprises a base, a cover plate fixed on the base, a vacuum chamber formed between the base and the cover plate, a window lens fixed inside the upper end of the cover plate, a window gasket fixed on the lower side of the window lens, a sight glass pressing plate fixed on the upper side of the window lens, and a silver table fixed on the base. A plurality of zirconium beads are arranged on the upper side and the lower side of the silver table, a zirconium bead fixing block and a silver table fixing piece which are used for fixing the zirconium beads are fixed in the base, a temperature control flange plate connected with the silver table is installed on one side of the base, a vacuum corrugated pipe communicated with the base is installed on the base, and a polyimide film is installed on the cover plate. The device is convenient to vacuumize, and experimental performance of a sample in a specific gas environment is convenient to research; and stable heating and cooling rates can be provided, and a user is allowed to carry out a rapid heating or slow heat treatment experiment on the material, so that behaviors of the material at different temperature change rates are researched.

The utility model discloses a semiconductor power device temperature shock experiment device, which comprises a low temperature box, a high temperature box, a heat insulation baffle and a clamp, the heat insulation baffle is arranged between the low temperature box and the high temperature box to isolate the high temperature box and the low temperature box, and the clamp is used for clamping and moving a semiconductor power device. A cold table is arranged in the low-temperature box and divides the low-temperature box into an upper low-temperature box body and a lower low-temperature box body, and a hot table is arranged in the high-temperature box and divides the high-temperature box into an upper high-temperature box body and a lower high-temperature box body. According to the utility model, heat conduction is realized through the cold and hot stage, rapid heat transfer with the semiconductor power device can be realized, rapid temperature shock conversion can be realized through assistance of the clamp, in addition, errors between the actual test temperature and the heating or refrigerating temperature of the device to be tested can be reduced through heat conduction of the cold stage and the hot stage, and the detection accuracy is improved.

The present application relates to the field of two-dimensional material lossless transfer, in particular to a two-dimensional material lossless transfer method assisted by low melting point metal. An organic transfer medium is spin-coated on a two-dimensional material synthesized on the surface of a metal substrate, and a transfer medium / two-dimensional material / metal substrate composite is obtained after heating and curing. The composite is placed on the surface of a liquid metal, and heated with a hot stage. The metal substrate is dissolved by alloying with the liquid metal, and separated from the transfer medium / two-dimensional material. The liquid metal and the transfer medium / two-dimensional material composite are separated, the transfer medium / two-dimensional material composite is transferred to the surface of a target substrate, the transfer medium is removed by organic solvent cleaning, and the two-dimensional material is transferred without damage. The method breaks the dilemma of having to use an oxidizing chemical etchant, and makes the transferred two-dimensional material have a more complete surface and a crystal structure that is not oxidized by chemical reagents, laying a foundation for the intrinsic property research and practical application of two-dimensional materials.

Techniques are provided that facilitate efficient heat distribution management within a cryogenic environment. In one example, a cryostat can include a plurality of thermal stages between 4 Kelvin (K) stages and cold plate stages. The plurality of thermal stages can include a stationary stage and an intermediate thermal stage that provides additional cooling capacity for the cryostat. The intermediate thermal stage can be directly mechanically coupled to the stationary stage via a support post.

This utility model proposes an adjustable heat insulation cover for a hot-stage microscope, including a base. A microscope mechanism is fixedly installed on the rear side of the base, and a displacement mechanism is fixedly installed on the top rear side of the base. During the application of this technical solution, the heat insulation mechanism and the displacement mechanism work together to allow the heat insulation mechanism to be flexibly adjusted during use, so that the two heat insulation covers can be precisely closed to form a closed space. At the same time, the heat insulation covers, together with heat-insulating silicone pads, can cover the bottom of the microscope body, thereby achieving the effect of reducing heat loss from the operating area in all directions. This solves the problems of high heat loss and temperature susceptibility to environmental interference caused by exposed heating structures in the prior art. It not only allows the heat from the synchronous operation of the main heating wire and the auxiliary heating wire to be efficiently retained, but also maintains the temperature stability of the operating area and avoids the impact of disordered heat diffusion on the activity of experimental samples.

This application provides a method for releasing surface charge on a wafer, comprising: after the wafer is transferred into a high-temperature process chamber, adjusting the wafer's lifting height to a preset preheating height and preheating the wafer, wherein the wafer's lifting height is the relative height between the wafer and the hot stage in the high-temperature process chamber; adjusting the wafer's lifting height to a preset gas filling height and introducing a preset gas into the high-temperature process chamber; turning on the radio frequency device to excite the preset gas to generate plasma; after the radio frequency device has been operating for a preset duration, turning off the radio frequency device and adjusting the wafer's lifting height to 0, thereby releasing the surface unbalanced charge of the wafer by generating plasma, making the wafer electrically neutral to the outside, and solving the problem that the wafer is difficult to release induced charge in a vacuum environment due to the pyroelectric effect, resulting in a strong potential between the wafer and the hot stage, which causes the wafer to be adsorbed on the hot stage, and the wafer pins supporting the wafer are easily broken during the transfer process.

The invention relates to the technical field of semiconductor laser manufacturing, and provides a method for realizing automatic mounting of a semiconductor laser, which comprises the following steps of: S1, moving a laser shell into a heating stage of a eutectic machine; s2, the TEC and the laser shell are mounted, the eutectic temperature is 280-320 DEG C, and gold-tin solder is selected; s3, the wiring block and the TEC are mounted, the eutectic temperature is 217-240 DEG C, and tin-silver-copper solder is selected; s4, the COC and the wiring block are mounted, the eutectic temperature ranges from 175 DEG C to 210 DEG C, and tin-indium-silver solder is selected; s5, the MPD, the NTC and the PZT are all mounted on the wiring block, the eutectic temperature is 145-170 DEG C, and a tin-bismuth solder is selected; and S6, obtaining a finished product. The method has the beneficial effects that the core idea is that gold tin, tin silver copper, tin indium silver, tin bismuth and other materials are sequentially adopted in the four temperature zones of high temperature, medium high temperature, medium low temperature and low temperature, a reliable mounting sequence is provided, and the performance of the semiconductor laser is improved.

The present invention relates to a plasma thin film deposition device with central air extraction, which includes a reaction chamber, a hot stage, a hot stage base, a lift, an air extraction device, and first and second elastic pipelines; the hot stage is divided into a bearing part and a support part vertically arranged in the middle of the bottom surface of the bearing part; there is a first gap between the bearing part and the inner side of the reaction chamber; the bottom end of the support part extends out of the bottom of the reaction chamber and is fixedly connected to the hot stage base, and there is a second gap between the support part and the bottom of the reaction chamber; the lift drives the hot stage base to move up and down in a direction perpendicular to the bearing part to drive the bearing part to move up and down; the first elastic pipeline is sleeved outside the extending part of the bearing part and is hermetically fixedly connected between the bottom of the reaction chamber and the hot stage base, and the top surface of the hot stage base is fixedly connected to the air extraction device through the second elastic pipeline; the hot stage base is provided with more than one through hole, and the through hole communicates the first elastic pipeline and the second elastic pipeline to form an air extraction channel. The present invention effectively solves the problem of edge effect and makes the film thickness of the thin film uniform.

The invention provides a eutectic heating stage clamp and eutectic equipment, the eutectic heating stage clamp comprises a heating stage, a first eutectic part and a second eutectic part, the first eutectic part and the second eutectic part are respectively arranged on the heating stage, the first eutectic part is provided with a first fixing assembly used for fixing a first optical device, and the second eutectic part is provided with a second fixing assembly used for fixing a second optical device. The first optical device is used for fixing the second optical device, and is different from the second optical device. The first eutectic part and the second eutectic part are respectively arranged on the heating stage, the first optical device and the second optical device which are different can be respectively fixed through the first fixing assembly and the second fixing assembly, two different types of optical devices can be compatible, different devices do not need to be used for eutectic, the switching time is shortened, and the switching efficiency is improved. And the compatibility and the production efficiency of single eutectic equipment are improved.

The invention discloses a preparation method of a polycation mixed perovskite device, and the method comprises the following steps: S1, carrying out the ultrasonic cleaning of a conductive substrate, placing the conductive substrate in a drying oven, drying, and treating the dried conductive substrate in an ultraviolet ozone environment; s2, forming an electron transport layer on the conductive layer of the conductive substrate; s3, treating the conductive substrate and the electron transport layer in an air plasma environment, and placing the treated conductive substrate and electron transport layer on a heating stage; s4, filling the perovskite precursor solution into a spray gun; s5, spraying by a spray gun to form a perovskite coating; s6, spraying by the spray gun to continuously form a perovskite coating; s7, repeating the step S6 to enable the perovskite thin film to reach a set thickness; and S8, removing a part of the perovskite thin film and the electron transport layer to expose the conductive layer of the conductive substrate, and depositing a metal electrode layer on the perovskite thin film. According to the invention, high photoelectric conversion efficiency is maintained, and the thermal stability of the perovskite material can be significantly improved.

The invention relates to the technical field of microfluidics, and discloses a micro-fluidic chip experiment cold and hot table device and a micro-fluidic chip experiment method.The micro-fluidic chip experiment cold and hot table device comprises a cold and hot table (1) used for bearing a micro-fluidic chip and a displacement control mechanism (2) used for controlling planar movement of the micro-fluidic chip, the temperature control units are sequentially adjacent in the horizontal direction of the cooling and heating table (1), and the temperatures of the adjacent temperature control units change in a gradient mode so as to control the temperature of the cooling and heating table (1) to change in the gradient mode in the horizontal direction. The internal fluid of the micro-fluidic chip can be at different temperatures at the same time without operating a cold and hot table to integrally heat or cool the chip, so that the research on the fluid flowing condition and the heat transfer rule under different temperature gradients is facilitated, and the experimental temperature can be adjusted according to the temperature required by the experiment. The micro-fluidic chip can be adjusted to be located at different positions of the cold-hot stage through the displacement control mechanism without waiting for temperature conversion of the cold-hot stage, so that the operation is convenient, and the time is saved.

The invention relates to the technical field of microscope cold and hot tables, and discloses a polarizing microscope cold and hot table with a window antifouling structure, which comprises a cold and hot table, an upper cover is arranged at the top of the cold and hot table, a connecting assembly is arranged between the cold and hot table and the upper cover, a window mirror is mounted at the center of the upper cover, and a mounting groove is formed in the bottom of the upper cover. An anti-fouling assembly is arranged in the mounting groove and comprises a mounting frame slidably connected to the inner side wall of the mounting groove, and a cross rod is fixedly connected to the center of the mounting frame. According to the cooling and heating table, the wiping block is driven by the motor to automatically wipe the bottom of the window mirror in a reciprocating mode, shutdown for manual cleaning is not needed, sample volatile matter, condensate water or dust and other pollutants on the window mirror can be removed in real time, it is avoided that stains block a light path to affect polarization observation precision, and the cooling and heating table can be used for energetic material such as casting carrier crystal morphology and rule research; the method is especially suitable for long-time continuous experiments, reduces experiment interruption times, and improves data integrity.

The application belongs to the technical field of heat reflection, and discloses a method and system for testing heat reflection coefficient. The application utilizes a high-precision cold and hot stage to accurately control the surface temperature of a test sample, obtains incident light information and reflected light information based on two detectors, and calculates the heat reflection coefficient of the test sample in a test temperature range in combination with temperature data. The application can measure a heat reflection coefficient with higher accuracy, and the system for testing heat reflection coefficient has simple structure, low cost, convenient operation, high working stability and strong practicability.

The application discloses a detection method of residual stress caused by preparation conditions in a polymer nanofilm, and the detection method comprises the following steps: substrate cleaning and modification; polymer nanofilm preparation; heat-induced polymer nanofilm dewetting; and residual stress calculation in the polymer nanofilm. The detection method does not need high-end detection equipment, and only needs an optical microscope, a hot stage and a computer to detect the residual stress in the polymer nanofilm, which has great significance for in-depth understanding of the molecular conformation in the polymer nanofilm and manipulation of the performance of the polymer nanofilm.

The present invention discloses a method and system for simulating and testing the temperature distribution in the active area of ​​a power semiconductor device chip. The method involves designing a metal pattern mask based on the cell information of the active area of ​​the power semiconductor device chip. A semiconductor wafer with a completed semiconductor multilayer structure and an undoped surface semiconductor layer is selected for deposition of the metal pattern. Using a confocal Raman spectrometer and a hot stage, the Raman characteristic temperature curve of the semiconductor layer on the chip sample's surface is calibrated. The bottom surface of the chip sample is connected to the device package heat dissipation structure, and the metal pattern on the chip sample's surface is connected to a DC power supply circuit. The DC power supply output is adjusted to simulate heat generation by the chip sample's active area heat source and achieve a target heat generation power. The temperature distribution in the chip sample's active area is measured based on the calibrated Raman characteristic temperature curve. The present invention enables simulation testing of the chip's active area junction temperature and temperature distribution during the design and manufacturing process of power semiconductor devices, allowing for experimental evaluation of the actual performance of the power semiconductor device's thermal design.

The present invention discloses a fixture for wire bonding of semiconductor devices and a wire bonding method. The fixture includes a flexible film, and the flexible film includes: a front side of the film, the peel adhesion between the front side of the film and the product bonding surface meeting the processing requirements; a back side of the film, the peel adhesion between the back side of the film and the hot stage bonding surface being greater than the processing requirements. The clamping method provided by the present invention can reduce the time for product clamping and switching, improve the assembly efficiency, reduce the fatigue strength and improve the assembly quality. It is measured that the assembly efficiency is comprehensively increased by 2 times or more.

The utility model discloses an optical uniform-temperature cooling and heating table which comprises a base, a cover plate is fixedly arranged on the outer side of the base, a decorative plate is arranged in the base, a zirconium bead fixing piece and a silver table fixing block are respectively arranged in the base, the zirconium bead fixing piece and the silver table fixing block are fixedly connected, and the zirconium bead fixing piece is fixedly connected with the silver table fixing block. A temperature control flange plate is fixedly arranged at the top of the base, a liquid nitrogen flange plate is fixedly arranged at the bottom of the base, an upper sight glass pressing plate is arranged on the outer side of the cover plate, and a liquid nitrogen pipe sleeve is fixedly arranged in the temperature control flange plate. The vacuum pump vacuumizes the interior of the base through the corrugated pipe, so that the interior of a cavity of the base is in a vacuum state, the table core is heated through the heating net, the temperature of the table core in the base rises to 600 DEG C, the temperature uniformity of the surface of the table core can be guaranteed through the heating net, the liquid nitrogen pump is started, and liquid nitrogen flows to the table core through the nitrogen conveying pipe; when the temperature of the table core is reduced, the temperature can be controlled to-190 DEG C, and the temperature can be effectively controlled at any temperature point between-190 DEG C and 600 DEG C.

The present invention discloses a method for evaluating mesophase pitch, comprising the following steps: taking a mesophase pitch bulk sample for polishing, photographing the polished mesophase pitch bulk sample using a polarized light microscope, statistically analyzing the stripes of the obtained photograph through a graphic processing software, and calculating the length, superposition angle and tortuosity; grinding the polished mesophase pitch bulk sample into mesophase pitch powder, spreading the mesophase pitch powder in a single layer on the crucible of the hot stage microscope stage, performing hot state observation under the hot stage microscope and calculating its maximum hot spreading area ratio; evaluating the mesophase pitch according to the above calculation results. The method for evaluating mesophase pitch of the present invention can quickly judge the spinnability of mesophase pitch.