47 results about "Cesium iodide" patented technology

The invention discloses a preparation method and application of washable tin-based perovskite quantum dots, and the preparation method comprises the following steps: mixing cesium iodide powder, tin iodide powder and mesoporous silica powder, and then placing the mixture in a plasma ball mill for ball-milling diffusion, cesium iodide and tin iodide react in a confinement space of mesoporous silica to generate a CsSn I < 3 >-coated SiO2 composite structure, CsSn I < 3 > quantum dots are dispersed and coated in the mesoporous silica, and the application of the tin-based perovskite quantum dots in the anti-ultraviolet textile fabric is provided. The method has the following beneficial effects that the purpose of remarkably improving the stability of the tin-based perovskite quantum dots and the washing resistance of the textile is achieved.

The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite thin film and a preparation method and application thereof. A fluorine-containing phosphazene compound is used as a ligand and is mixed with a perovskite precursor solution composed of lead iodide, formamidine iodine and cesium iodide, spin coating is performed, the fluorine-containing phosphazene compound and part of formamidine cations form hydrogen bonds, part of formamidine cations are anchored at the bottom of a perovskite film, Cs-formamidine cations are uniformly distributed, and the perovskite film is prepared. Meanwhile, the fluorine-containing phosphazene compound and Pb < 2 + > form a coordinate bond, Pb < 2 + > defects are passivated, and the perovskite thin film is obtained through anti-solvent treatment and annealing treatment. The fluorine-containing phosphazene compound interacts with the components in the perovskite precursor solution, so that the nucleation rate of perovskite can be increased, the crystallization rate can be slowed down, the tensile stress can be eliminated, the perovskite does not enter crystal lattices, and the stability and crystallinity of the film are guaranteed. The perovskite thin film can be used for an inverted perovskite solar cell, and the performance and the stability of a device are improved.

The invention discloses a sulfaguanidine modified inorganic tin-based perovskite light-emitting diode and a preparation method thereof, and belongs to the field of luminescent material preparation, the preparation method comprises the following steps: preparing a perovskite precursor solution which comprises cesium iodide, stannous iodide, sulfaguanidine and an organic solvent; applying the perovskite precursor solution to a substrate to form a wet film; carrying out annealing treatment on the wet film so as to form a perovskite light-emitting layer containing CsSnI3 perovskite and sulfaguanidine; a hole transport layer is formed on an anode conductive substrate, and a perovskite light-emitting layer is adopted on the hole transport layer; and sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the perovskite light-emitting layer. The process is simple and suitable for popularization and application.

The invention discloses a preparation method of a high-quality perovskite thick film for an X-ray detector, and relates to the technical field of radiation detection materials and devices. The preparation method of the thick film comprises the following steps: preparing a precursor solution from lead iodide, cesium iodide, formamidine iodide, methylamine iodide, 4-guanidinobenzoic acid hydrochloride, N, N-dimethylformamide and acetonitrile; a bulk phase functional additive is introduced to optimize a large number of Schottky defects at the grain boundary of the perovskite thick film; depositing onto a heated conductive glass substrate using a spray coating technique; and in combination with a low-temperature solvent atmosphere annealing process, secondary growth of crystal grains and grain boundary healing are promoted, and a large-area polycrystalline thick film can be obtained.

The invention relates to a lead-free perovskite composite material, a preparation method thereof and application of the lead-free perovskite composite material in a resistive random access memory, and belongs to the technical field of preparation of the resistive random access memory. The lead-free perovskite composite material comprises a doped Sb element, the chemical formula of the lead-free perovskite composite material is Cs3Cu2I5: Sb, the molar ratio of Sb to Cu is (0.1-1): 1, the perovskite Cs3Cu2I5 is doped and modified through the element Sb, the content of iodine vacancy (VI) in cesium-iodine-copper perovskite can be reduced, the stability of conductive filaments can be improved, and therefore the resistance change performance of the resistive random access memory is improved.

The application belongs to the technical field of photovoltaic devices, and relates to preparation and application of a multifunctional organic additive doped CsSnI3 perovskite film; during preparation, a perovskite spin coating liquid is spin coated on an ITO glass substrate to form a precursor film, and the precursor film is subjected to annealing treatment to obtain a CsSnI3 perovskite film; the perovskite spin coating liquid is formed by adding stannous fluoride and 3-amino-pyrazine-2-carboxamide (3-APCA) to a perovskite precursor solution and stirring; the perovskite precursor solution is formed by dissolving cesium iodide and stannous iodide in an organic solvent; and the application is applied to solar cells, light-emitting diodes, photoelectric detectors, photoelectric catalysis and energy storage. The method introduces the multifunctional organic additive 3-APCA, realizes Sn 2+ oxidation inhibition, optimizes film crystallinity and passivates defects, and significantly improves the quality of the CsSnI3 perovskite film; and the application range is wide.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The application discloses a preparation method and application of high-purity cesium iodide, which comprises the following steps: firstly, mixing an industrial-grade cesium source powder and an iodine source solution, and preparing a solid powder after vacuum rotary evaporation and drying; then repeatedly washing the powder by using a special detergent, removing impurities, and drying; sintering at a temperature of 200-350 DEG C; dissolving the sintered powder in deionized warm water, and cooling and crystallizing at 0 DEG C; and finally collecting and drying the crystallization product to obtain the high-purity cesium iodide (CsI) finished product. The CsI powder prepared by the application has a purity of more than 99.99%, can obtain more excellent comprehensive performance, and has a simple and controllable process, and has a wide application prospect in the field of perovskite solar cells.

The invention relates to the technical field of lithium-sulfur batteries, and discloses a high-specific-volume lithium-sulfur battery which comprises a positive electrode material, a negative electrode material, a diaphragm and an electrolyte, wherein the electrolyte comprises an organic solvent, an organic lithium salt and an electrolyte additive, and the electrolyte additive is cesium iodide; the diaphragm comprises a carbon material, a polymer base material, a binder and a Lewis acid catalyst, wherein the Lewis acid catalyst is molybdenum disulfide. The electrolyte additive contained in the electrolyte of the lithium-sulfur battery is combined with the Lewis acid catalyst in the diaphragm, so that the rapid conversion of sulfur species can be realized, meanwhile, the Lewis acid catalyst is ensured to always keep high activity, and the high-performance lithium-sulfur battery is effectively constructed.

The invention discloses a preparation method of polycation black-phase perovskite microcrystal powder, and belongs to the technical field of new energy and photoelectric materials. The method comprises the following steps: dissolving formamidine iodide (FAI), cesium iodide (CsI), lead iodide (PbI2) and an accelerant n-propylamine hydrochloride (PACl) in an alcohol solvent according to a designed molar ratio to prepare a 0.2-2 mol.L <-1 > uniform solution, and heating and stirring to form a black precipitate; and quickly filtering, washing by using an alcohol solvent to remove the residual additive, and carrying out vacuum drying to obtain the high-purity black-phase microcrystalline powder. The prepared powder has uniform Cs / FA distribution, does not contain any yellow phase, remarkably inhibits cation segregation, improves the crystallization quality and phase stability, is simple in preparation process, is easy to remove auxiliary agent residues, and can be widely applied to preparation of photoelectric devices such as high-efficiency perovskite solar cells and the like.

The invention provides a nitrogen-defect g-C3N4 / CsCu2I3 composite material as well as a preparation method and application thereof, and belongs to the technical field of preparation of nano heterogeneous materials. A preparation method of a nitrogen-defect g-C3N4 / CsCu2I3 composite material comprises the following steps: dissolving cesium iodide and cuprous iodide in anhydrous acetonitrile, and carrying out a stirring reaction at 50-70 DEG C for 4-6 h to obtain a CsCu2I3 precursor solution; adding g-C3N4 into the CsCu2I3 precursor solution, and reacting for 10-14 hours at the temperature of 50-70 DEG C to obtain a crystallization solution; and dropwise adding diethyl ether into the crystallization solution, carrying out anti-solvent crystallization, aging, washing and drying to obtain the nitrogen-defect g-C3N4 / CsCu2I3 composite material. The nitrogen-containing defect rod-like g-C3N4 / CsCu2I3 binary nano heterojunction with good gas sensitive performance is prepared by the method disclosed by the invention.

The invention relates to a perovskite precursor solution, a perovskite thin film, a preparation method of the perovskite thin film and a photovoltaic module. The perovskite precursor solution comprises a perovskite precursor, an additive and a mixed solvent; the perovskite precursor is prepared from formamidine hydriodate and lead iodide; the additive comprises cesium iodide and methylamine hydrochloride; the mixed solvent is prepared from N, N-dimethyl formamide, N-methyl pyrrolidone and cyclohexyl pyrrolidone. The composition of the perovskite precursor solution is blended, the high-quality perovskite thin film with the micro-suede surface is spontaneously formed in the perovskite crystallization process, the micro-suede surface structure can increase the contact area between a perovskite layer and a subsequent functional layer, a tight mechanical interlocking effect is generated between the micro-suede surface structure and the interface of the functional layer, and the performance of the perovskite thin film is improved. Therefore, the interface adhesive force of the subsequent functional layer and the metal electrode is obviously improved, and the problem of performance degradation of the perovskite assembly caused by the packaging process is solved.

The invention provides a cesium iodide crystal detector packaging structure and method, and belongs to the technical field of high-energy physical detectors. The cesium iodide crystal detector packaging structure comprises two groups of optical fiber modules, two groups of optical fiber readout SiPM, two groups of crystal readout SiPM and cesium iodide crystals, the two groups of optical fiber modules are tightly attached to the upper surface and the lower surface of the cesium iodide crystal respectively and are orthogonally arranged; the two groups of optical fiber reading SiPMs are respectively arranged on the two groups of optical fiber modules and are used for reading photons propagating to the tail ends of the optical fibers; the two groups of crystal read-out SiPMs are respectively clung to the two side surfaces of the cesium iodide crystal, are orthogonally arranged and are used for reading out photons propagating to the side surfaces of the cesium iodide crystal. According to the invention, photon number measurement can be provided while position resolution is measured, and the energy resolution capability is improved; the structure optimization degree is high, and substance interference does not exist on an incident particle path; the structure is convenient to install, corresponding operation is adopted, and detector packaging can be effectively completed.

The invention provides a solar cell based on a Cu-doped lead-copper alloy perovskite light absorption layer and a preparation method of the solar cell, and the light absorption layer of the solar cell is a Cu-doped lead-copper alloy perovskite thin film Cs0. 05MA 0. 10FA 0. 85Pb1-xCuxI3, the preparation method of the lead-copper alloy perovskite thin film comprises the following steps: adding formamidine hydriodate, methylamine hydriodate, cesium iodide, lead iodide and cuprous iodide powder into a solvent, and uniformly stirring and mixing to prepare a perovskite precursor solution; the PbI2 powder and the CuI powder are uniformly mixed, the uniformly mixed precursor solution is spin-coated, annealing is carried out on a heating stage, the thin film is obtained, the ratio of the PbI2 powder to the CuI powder is 1-x: x, and x is equal to 0-10%. The copper-doped lead-copper alloy perovskite with the three-dimensional octahedral structure synthesized by the method has structural and thermodynamic stability and is high in fluorescence performance and light absorption performance, and the crystallization quality of a thin film is remarkably improved; when the perovskite thin film is used as a light absorption layer of the cell, a perovskite solar cell with high photoelectric conversion efficiency can be prepared, and the perovskite solar cell has excellent ultraviolet resistance and high temperature resistance stability.

The present application relates to the field of perovskite microcrystal, and particularly relates to a black-phase CsPbI3 perovskite microcrystal, a full-inorganic thin film and a preparation method thereof.The preparation method comprises the following steps: mixing cesium iodide, lead iodide and a solvent to obtain a precursor solution; mixing the precursor solution, a heterogeneous metal ion stress inducer and a perfluorinated organic ligand, and performing a reaction to obtain the black-phase CsPbI3 perovskite microcrystal.The preparation method of the full-inorganic thin film comprises the following steps: mixing the black-phase CsPbI3 perovskite microcrystal and a high-polarity solvent, and performing dispersion to obtain ink; coating the ink on a substrate, and performing annealing treatment to obtain the full-inorganic thin film.The present application rewrites the thermodynamic stability interval by introducing a lattice stress field in the microcrystal synthesis stage, and realizes low-temperature preparation of the full-inorganic thin film by using the phase template effect.

This invention belongs to the field of scintillator material preparation technology, specifically relating to a method for purifying high-purity cesium iodide and its application in the preparation of cesium iodide scintillator screens. The method involves sequentially mixing and heating cesium iodide-containing waste and residual materials to dissolve them, filtering and removing impurities, adsorption and removing impurities, concentrating and temperature-controlled crystallization, centrifuging, drying, and vacuum packaging. This process comprehensively removes solid particulate impurities, elemental iodine, and various trace metal ions from the raw materials, effectively preventing oxidation and deterioration during purification. The method is simple to operate, highly industrially feasible, and can purify waste materials to a high purity level that meets the requirements of high-performance applications. It allows for the reuse of waste materials at the same purity level, reducing production costs, alleviating raw material supply pressure, and complying with environmental protection requirements. Applying the high-purity cesium iodide obtained by this method to the preparation of cesium iodide scintillator screens using a vacuum thermal evaporation process ensures the excellent performance of the scintillator screens, making them suitable for high-end fields such as medical imaging and non-destructive testing.

The invention discloses a cesium iodide nanocrystalline composite chalcogenide glass ceramic and a preparation method thereof, the chemical formula of the cesium iodide nanocrystalline composite chalcogenide glass ceramic is xGa2S3-ySnS2-(1-x-y) CsI, x is more than or equal to 0.2 and less than or equal to 0.3, and y is more than or equal to 0.2 and less than or equal to 0.6; the preparation method comprises the following steps: preparing a glass mixture according to a chemical formula by taking simple substances Ga, Sn and S and a compound CsI as raw materials; placing the glass mixture in a sealed vacuum quartz ampoule, carrying out melt firing at 850-900 DEG C for more than 12 hours, taking out the glass mixture at 650-700 DEG C, and quenching to form glass; carrying out annealing treatment on the formed glass at 250-290 DEG C / min for 4-6 hours, and then cooling to room temperature at a rate of 0.05-0.2 DEG C / min; and carrying out heat treatment on the obtained matrix glass at 350-390 DEG C for 5-20 hours, and then carrying out furnace cooling to room temperature. The chalcogenide glass ceramic contains uniformly distributed CsI nanocrystals, has good thermal and chemical stability and mechanical strength, and can be used in the technical fields of X-ray detection and infrared thermal imaging.

The invention relates to the technical field of semiconductor light-emitting devices, and discloses a preparation method of a high-color-purity blue light LED, which comprises the following steps of: mixing cesium iodide and cuprous iodide and reacting to prepare a Cs3Cu2I5 nuclear material; the Cs3Cu2I5 core material is placed in a shell layer precursor solution containing a gallium source to be wrapped and then annealed, and core-shell structure fluorescent powder is obtained; preparing the fluorescent powder with the core-shell structure into slurry, coating a base material with the slurry layer by layer, and performing high-temperature treatment to form a fluorescent material film with Ga concentration gradient; and integrating an ultraviolet LED chip with the fluorescent material film to prepare the high-color-purity blue light LED. According to the invention, the core-shell passivation structure and the concentration gradient film are constructed, and the functionalized packaging resin is matched, so that the quantum yield, the color purity, the light extraction efficiency and the long-term working stability of the blue light LED are improved.

This invention discloses a method for preparing inorganic perovskite thin films assisted by cystamine dihydrochloride. This invention relates to the field of optoelectronic materials and devices, and includes the following specific steps: Step 1: Weigh cesium iodide, lead iodide, and dimethylamine hydroiodide as raw materials, select DMF as the solvent, and then slowly add these raw materials to the DMF solvent. Stirring is performed at room temperature to obtain an inorganic perovskite precursor solution. The advantages of this invention are: by selecting cesium iodide, lead iodide, and dimethylamine hydroiodide in the inorganic perovskite precursor solution, it provides the basic elements for constructing the perovskite crystal structure, ensuring that the thin film possesses basic optoelectronic properties. It enhances the adhesion between the thin film and the substrate, effectively alleviates stress caused by differences in thermal expansion coefficients, and greatly suppresses the structural phase transition of the thin film under high-temperature conditions, successfully solving the problem of a sharp decline in the optoelectronic performance of thin films at high temperatures in existing technologies.

A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsI:Tl, Me, where Me represents co-doped Sb and Bi. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium, a second dopant including an antimony, and a third dopant including a bismuth.

The invention discloses a lead-tin perovskite thin film and a preparation method and application thereof, and particularly relates to the field of photoelectric materials and devices. Comprising a bottom-buried interface layer, a lead-tin perovskite layer and an upper interface modification layer which are sequentially arranged from bottom to top, the lead-tin perovskite layer is formed by a lead-tin perovskite precursor solution, and the lead-tin perovskite precursor solution comprises the following components: a two-dimensional perovskite single crystal, lead iodide, stannous iodide, methylamine iodine, formamidine iodine, stannous fluoride and cesium iodide; and the component of the two-dimensional perovskite single crystal is PEA2PbI4. A two-dimensional perovskite single crystal is added into a Pb-Sn perovskite precursor to serve as a heterogeneous nucleation site, Pb-Sn perovskite is guided to longitudinally grow in the direction perpendicular to a substrate, transverse grain boundaries are reduced, and the crystallization quality is improved; meanwhile, as a buried interface and an upper interface modification layer, efficient transmission and extraction of photon-generated carriers in a Pb-Sn perovskite thin film and high efficiency and stability of a Pb-Sn perovskite cell can be realized.

The invention provides cesium iodide and a preparation method thereof, a solar cell and a preparation method thereof, and a photovoltaic module, and the cesium iodide comprises a first substance with reducibility. The cesium iodide provided by the invention is good in stability and easy to store, and the solar cell prepared from the cesium iodide provided by the invention has improved photoelectric conversion efficiency and device stability.

The invention relates to the technical field of scintillation screens, in particular to a scintillation screen based on gadolinium gallium aluminum garnet scintillation single crystals and a preparation method of the scintillation screen. The scintillation screen comprises a substrate, a light reflecting layer, a gadolinium gallium aluminum garnet scintillator powder screen and a light emitting layer, an inner groove is formed in the upper surface of the reflective layer, and the gadolinium gallium aluminum garnet scintillator powder screen is arranged in the inner groove; the gadolinium-gallium-aluminum garnet scintillator powder screen is prepared by mixing gadolinium-gallium-aluminum garnet scintillation single crystal particles and an inorganic binder in proportion, sintering and then grinding and polishing. The problems that an existing needle-shaped cesium iodide scintillation screen is not resistant to irradiation, prone to deliquescence and poor in afterglow, a gadolinium oxysulfide ceramic scintillation screen is poor in resolution ratio and low in luminous efficiency, and a Ce: GAGG single crystal spliced scintillation screen has a dead zone are solved, the irradiation stability and environmental adaptability of the scintillation screen are remarkably improved, the service life of the scintillation screen is remarkably prolonged, meanwhile, the preparation process is flexible, and the cost is low. And high-performance scintillation screens with different shapes and sizes can be prepared.

The invention relates to the technical field of photovoltaic cells, and provides a preparation method of a perovskite thin film and a perovskite cell, and the preparation method of the perovskite thin film comprises the steps: preparing a perovskite precursor solution: dissolving cesium iodide, lead iodide and formamidine iodide in dimethyl sulfoxide (DMSO) to obtain a first solution; dissolving molecules with a bipyridine group and a diphosphate group in an N, N-dimethylformamide (DMF) solution to obtain a second solution; mixing the first solution and the second solution to obtain a perovskite precursor solution; preparing a perovskite thin film: coating the perovskite precursor solution on the top surface of a substrate to perform film forming treatment, and performing annealing treatment to obtain the perovskite thin film; the molecules with the bipyridine group and the diphosphate group comprise 2, 2 '-bipyridine-4, 4'-diphosphon.By means of the method, the problems that internal and surface defects exist in the perovskite thin film, carrier transport is limited by the defects, and the photoelectric conversion efficiency of a perovskite cell is restrained can be solved.

The invention discloses a preparation method of cesium iodide, cesium iodide and application, and relates to the technical field of inorganic materials. According to the preparation method disclosed by the invention, the original crystal form morphology of cesium iodide is changed by adding a specific type of surfactant and using a high-temperature and high-pressure hydrothermal reaction, so that polyhedral crystal forms such as a truncated octahedron, a cube and a rhombic dodecahedron are formed, the specific surface area of cesium iodide is further increased, a larger contact area can be provided, and the stability of a product is improved; and the solubility of cesium iodide in an organic solvent can be improved, and the application effect of cesium iodide in a perovskite material is improved.

The application discloses a quasi-two-dimensional red light perovskite LED device and a preparation method thereof, and belongs to the technical field of light emitting diodes, wherein the preparation method comprises the following steps: depositing a PEDOT:PSS aqueous solution on a substrate surface by a spin coating method, and performing a first annealing treatment; mixing TFB and PVK in a chlorobenzene solution, and depositing the mixture on the substrate surface after the first annealing treatment by a spin coating method, and performing a second annealing treatment; depositing a calcium lignosulfonate solution on the substrate surface after the second annealing treatment by a spin coating method; dissolving lead iodide, cesium iodide, zinc iodide, 3,3-diphenylpropylamine iodine, 1-naphthalene methylamine iodine and phenylethylamine iodine in an N,N-dimethylformamide solution to obtain a perovskite precursor solution; dropping the perovskite precursor solution on the substrate surface after the above treatment to prepare a thin film, and performing a third annealing treatment on the thin film; and evaporating an electron transport layer and a cathode electrode on the thin film to obtain the quasi-two-dimensional red light perovskite LED device. The quasi-two-dimensional red light perovskite LED device has a small turn-on voltage, high brightness and high external quantum efficiency.

The invention discloses a high-stability 2D / 3D tin-based perovskite (CsSnI3) heterojunction thin film transistor and a full-evaporation preparation method. The method comprises the following steps: sequentially evaporating a stannous iodide layer, a stannous fluoride layer, a lead chloride intermediate layer and a cesium iodide layer on a P-type silicon / SiO2 substrate; and annealing to form a two-dimensional Cs2PbI2Cl2 covering layer on the top of the CsSnI3 thin film in situ, thereby constructing the CsSnI3 perovskite semiconductor thin film with a 2D / 3D heterostructure. And finally evaporating gold source and drain electrodes. Compared with a non-doped device, the current switch ratio of the prepared transistor is improved by about 2 orders of magnitude, the mobility is improved by dozens of times, and the threshold voltage is remarkably reduced; and particularly, the air stability is revolutionarily improved, and the stable working time of the device in the air is greatly prolonged to more than 24 hours from the minute level (undoped). The method is simple in process and low in cost, and an effective way is provided for large-area preparation of high-performance and high-stability tin-based perovskite electronic devices.

The invention discloses an ionic liquid modified perovskite light absorption layer and a preparation method and application thereof, and belongs to the technical field of solar cells. The preparation method comprises the following steps: dissolving cesium iodide, methyl ammonium bromide, formamidine hydriodate, lead iodide and lead bromide in N, N-dimethylformamide and dimethyl sulfoxide; adding 1-butyl-2, 3-dimethylimidazole p-methyl benzene sulfonate into the solution, and stirring to form a mixed solution; and spin-coating the mixed solution on a substrate, spin-coating chlorobenzene, and finally annealing to obtain the perovskite light absorption layer. According to the invention, nitrogen atoms in positive ions of 1-butyl-2, 3-dimethylimidazole p-methyl benzene sulfonate are combined with uncoordinated Pb < 2 + > defects in perovskite through lone pair electrons, so that surface defects of perovskite are effectively passivated. The efficiency of the hybrid perovskite solar cell is improved to 22.57%, the surface of the thin film is cleaner, the defect state density is reduced, and the stability is remarkably enhanced.

The application belongs to the technical field of solar cells, and provides a preparation method of inorganic perovskite nanowire film. First, lead iodide is dissolved and stirred uniformly under constant temperature to obtain a lead iodide precursor solution; a precipitating agent is added to the lead iodide precursor solution to obtain light yellow flocculation, and the light yellow flocculation is centrifuged to obtain light yellow colloidal material, which is vacuum dried to obtain a lead iodide composite product; a precursor spin coating solution is obtained based on the lead iodide composite product, the precursor spin coating solution is spin coated on a substrate to form a film, and annealing treatment is performed to obtain a loose lead iodide film layer; the lead iodide film layer is sequentially immersed in a cesium iodide solution and a cesium bromide solution, and then annealing treatment is performed to obtain an inorganic perovskite film, so that the loose PbI2 nanostructure can fully contact and react with the cesium iodide solution and the cesium bromide solution, and a one-dimensional inorganic perovskite nanowire material with good orientation, excellent physical and chemical stability and high crystallinity is prepared.

This invention relates to an inorganic perovskite thin film, its preparation method, and a solar cell. The method includes the following steps: S1: forming a first thin film through a first vapor deposition process; S2: annealing the first thin film to obtain a second thin film; S3: forming a third thin film on the second thin film through a second vapor deposition process; and S4: annealing the second thin film and the third thin film to obtain the inorganic perovskite thin film; wherein, in the first vapor deposition process, the raw materials used for evaporation include cesium bromide and lead iodide; and in the second vapor deposition process, the raw materials used for evaporation include cesium iodide and lead iodide. The inorganic perovskite thin film prepared by the method of one embodiment of this invention, compared with existing inorganic perovskite thin films, improves the phase stability of the perovskite structure without affecting the light absorption range of the prepared solar cell, and simultaneously improves the photoelectric conversion efficiency of the cell.