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31 results about "Gas electron multiplier" patented technology

A gas electron multiplier (GEM) is a type of gaseous ionization detector used in nuclear and particle physics and radiation detection. All gaseous ionization detectors are able to collect the electrons released by ionizing radiation, guiding them to a region with a large electric field, and thereby initiating an electron avalanche. The avalanche is able to produce enough electrons to create a current or charge large enough to be detected by electronics. In most ionization detectors, the large field comes from a thin wire with a positive high-voltage potential; this same thin wire collects the electrons from the avalanche and guides them towards the readout electronics. GEMs create the large electric field in small holes in a thin polymer sheet; the avalanche occurs inside of these holes. The resulting electrons are ejected from the sheet, and a separate system must be used to collect the electrons and guide them towards the readout.

Ionization absorption spectrum detection device based on multi-channel electron multiplier

The invention provides an ionization absorption spectrum detection device based on a multi-channel electron multiplier; the ionization absorption spectrum detection device includes an ionization chamber for ionizing gas, a golden net, the multi-channel electron multiplier, a voltage increasing and signal acquisition circuit, and a signal processing system; the golden net is arranged in the ionization chamber and arranged for collecting ions generated from ionization in the ionization chamber; the multi-channel electron multiplier is arranged in the ionization chamber, has the position opposite to the position of the golden net so as to form an electric field between the multi-channel electron multiplier and the golden net, receives the ions collected by the golden net through the action of the electric field and outputs a corresponding ion signal; the voltage increasing and signal acquisition circuit is connected to the multi-channel electron multiplier and arranged for providing voltage for the multi-channel electron multiplier and acquiring and outputting the ion signal; the signal processing system is arranged for receiving the ion signal and acquiring a corresponding ionization absorption spectrum according to the ion signal. The ionization absorption spectrum detection device can improve the accuracy degree of measurement beam line energy resolution ratio and reduce the influence of gas collision broadening on a final result.
Owner:SHANGHAI INST OF APPLIED PHYSICS - CHINESE ACAD OF SCI

Apparatus and method for array gem digital imaging radiation detector

An array gas electron multiplier (GEM) digital imaging radiation detector and a control method thereof are disclosed. The array gas electron multiplier (GEM) digital imaging radiation detector includes an array GEM detector. The array GEM detector includes: an ionized electron generation unit for generating ionized electrons in internal filling gas by incident X-rays or gamma rays or by incident charged particles; a gas electron multiplication unit for multiplying the ionized electrons of the ionized electron generation unit in filling gas inside hole of a gas electron multiplier (GEM), through electron avalanche effect, using the GEM, to form electron clouds; a readout for detecting and outputting coordinates of the electron clouds as the readout receives positions through electrical signals, in which the positions of the electron clouds, being multiplied and formed in the gas electron multiplication unit, reach output electrodes. Therefore, the present invention can multiply ionized electrons of internal filling gas as a gas electron multiplier (GEM) generates an electron avalanche effect in the hole thereof, in which the ionized electrons are generated as a photo-electron effect or a Compton effect is induced by high energy incident light, such as X-rays or gamma rays, or which are directly generated by incident charged particles, and can convert image information of the inside or outside of an target object into images of two-dimensions, in real time, such that the detector can be properly used as a security search apparatus in a harbor or an airport, or can be adapted as a core part of industrial nondestructive testing apparatus.
Owner:HAHN CHANG HIE

Thick gas electron multiplier having multilayer-structure single film

The application discloses a thick gas electron multiplier having a multilayer-structure single film. The thick gas electron multiplier comprises a membrane plate formed by alternating lamination of copper layers and insulating layers; the copper layers and the insulating layers are in tight contact; and the copper layers are arranged at the bottom and top of the membrane plate. A plurality of through straight holes are formed in the membrane plate and penetrate the top layer and the bottom layer; and insulating rings are arranged at the inner walls of the through straight holes and are used for isolating the copper layers from the inner cavities of the through straight holes. Because the membrane plate formed by alternating lamination of copper layers and insulating layers is arranged andthe copper layers and the insulating layers are in tight contact, the through zone formed between the conventional multilayer superposed structures is removed and thus the thickness of the multi-layerstructure is reduced; and the through straight holes are formed in the membrane plate in an overall manner and thus hole alignment is ensured and deformation and parallelism between layers are the same, so that problems of misalignment of the holes of the multi-layer structure and large multi-layer deformation and parallelism difference are solved.
Owner:INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI

Sliding type self-tensioning method for installing and manufacturing large-area GEM detector

The invention discloses a sliding type self-tensioning method for installing and manufacturing a large-area gas electron multiplier (GEM) detector. The sliding type self-tensioning method comprises a GEM film fixing method and a method for applying a tension force on the GEM film. Two kinds of pad strips are used for fixing a drift electrode and four edges of a GEM film. The first kind of pad strips are arranged in the middle between the drift electrode and the GEM film edge; and the second kind of pad strips are arranged at positions, approaching corner, of the two ends of the drift electrode and the GEM film edge. Sliding blocks are fixed at the outer sides of the two kinds of pad strips; and screw holes are formed in the outer sides of the sliding blocks. Clamp grooves are formed in the main frame; the parts, with the screw holes, of the outer sides of the sliding blocks are clamped into the clamp grooves for positioning; and through holes are formed in the walls of the clamp grooves; and bolts pass through the through holes and are screwed into the screw holes for tensioning. According to the invention, the method has all advantages of the self-tensioning method but problems that exist when the GEM detectors with the levels above nanometer level are manufactured are solved. Therefore, the provided method has the high design flexibility and can be used for manufacturing large-area GEM detectors with all shapes and various dimensions.
Owner:UNIV OF SCI & TECH OF CHINA

Sliding self-tensioning method for installation and fabrication of large area gem detectors

The invention discloses a sliding type self-tensioning method for installing and manufacturing a large-area gas electron multiplier (GEM) detector. The sliding type self-tensioning method comprises a GEM film fixing method and a method for applying a tension force on the GEM film. Two kinds of pad strips are used for fixing a drift electrode and four edges of a GEM film. The first kind of pad strips are arranged in the middle between the drift electrode and the GEM film edge; and the second kind of pad strips are arranged at positions, approaching corner, of the two ends of the drift electrode and the GEM film edge. Sliding blocks are fixed at the outer sides of the two kinds of pad strips; and screw holes are formed in the outer sides of the sliding blocks. Clamp grooves are formed in the main frame; the parts, with the screw holes, of the outer sides of the sliding blocks are clamped into the clamp grooves for positioning; and through holes are formed in the walls of the clamp grooves; and bolts pass through the through holes and are screwed into the screw holes for tensioning. According to the invention, the method has all advantages of the self-tensioning method but problems that exist when the GEM detectors with the levels above nanometer level are manufactured are solved. Therefore, the provided method has the high design flexibility and can be used for manufacturing large-area GEM detectors with all shapes and various dimensions.
Owner:UNIV OF SCI & TECH OF CHINA

Method of manufacturing a gas electron multiplier

Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer. In another embodiment, in the second metal layer hole forming step, the first and second metal layers are etched from the outside, thereby reducing the initial thicknesses of the first and second metal layers and the second metal layer is simultaneously etched through the holes in the first metal layer and the insulating sheet, said etching being maintained until the holes extend through the second metal layer, wherein said initial average thickness of the first and second metal layers is between 6.5 μm and 25 μm, preferably between 7.5 μm and 12 μm.
Owner:EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH
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