16 results about "Position resolution" patented technology

The invention provides a high-gain 4H-SiC ultraviolet position sensitive detector and a preparation method thereof, and relates to the technical field of semiconductor photoelectric detection. A high-gain 4H-SiC ultraviolet position sensitive detector is realized through a first n-type 4H-SiC layer, a p-type 4H-SiC layer and a second n-type 4H-SiC layer, namely, an n +-p-n-structure, and a wide bandgap semiconductor material 4H-SiC is used as a device main body for migration of carriers irradiated by light. The material has the outstanding characteristics of large forbidden band width, high critical displacement energy, high thermal conductivity coefficient, good chemical stability and the like. According to the device structure, by introducing an internal gain mechanism, the photoelectric conversion efficiency and the position resolution ratio under the weak light condition are remarkably improved, and the limitations that an existing silicon-based PSD is large in background noise, and performance attenuation or damage is prone to occurring under the extreme environments of high temperature, intense radiation and the like are effectively overcome.

The invention belongs to the field of aero-engine health monitoring and fault diagnosis, relates to a surge monitoring technology, and provides a multi-parameter-based aero-engine surge identification method, which comprises the following steps of: acquiring an asynchronous vibration amplitude of a blade tip of a fan blade, a pulsation coefficient of an outlet of a gas compressor and a dynamic change rate of a fan support axial load; the three parameters are compared with corresponding threshold values respectively, and the surge position is judged according to specific logic: when the compressor outlet pulsation coefficient is not lower than the threshold value, if the axial load change rate or the vibration amplitude exceeds the limit, the compressor end surge is judged; and when the pulsating pressure is lower than the threshold value, if the change rate of the axial load and the vibration amplitude exceed the limits at the same time, fan end surge is judged. According to the method, single signal misjudgment is effectively avoided through multi-parameter fusion and surge position judgment logic, the surge recognition accuracy and the position resolution capability are remarkably improved, and the method is particularly suitable for complete machine level real-time monitoring.

The invention relates to the technical field of semiconductor device photoelectric detection, in particular to a silicon carbide-based ultraviolet position sensitive detector based on a thin Schottky metal material and a preparation method thereof, and the silicon carbide-based ultraviolet position sensitive detector comprises an N-type ohmic contact lower electrode, an N-type silicon carbide substrate and an N-type silicon carbide low-doped epitaxial layer which are sequentially connected from bottom to top; the N-type silicon carbide low-doped epitaxial layer is provided with a Schottky metal film with the thickness lower than 4 nm, and the Schottky metal film is used for forming a photosensitive area. A plurality of metal conductive electrodes are arranged at the edge of the top of the Schottky metal film, are electrically connected with the Schottky metal film and are used for leading out position-related electric signals. The problems that an existing pn junction type position sensitive detector is limited in response speed and insufficient in time resolution are effectively solved, and the detection efficiency and the position resolution capacity of the detector in the vacuum ultraviolet band are effectively improved.

The invention provides a cesium iodide crystal detector packaging structure and method, and belongs to the technical field of high-energy physical detectors. The cesium iodide crystal detector packaging structure comprises two groups of optical fiber modules, two groups of optical fiber readout SiPM, two groups of crystal readout SiPM and cesium iodide crystals, the two groups of optical fiber modules are tightly attached to the upper surface and the lower surface of the cesium iodide crystal respectively and are orthogonally arranged; the two groups of optical fiber reading SiPMs are respectively arranged on the two groups of optical fiber modules and are used for reading photons propagating to the tail ends of the optical fibers; the two groups of crystal read-out SiPMs are respectively clung to the two side surfaces of the cesium iodide crystal, are orthogonally arranged and are used for reading out photons propagating to the side surfaces of the cesium iodide crystal. According to the invention, photon number measurement can be provided while position resolution is measured, and the energy resolution capability is improved; the structure optimization degree is high, and substance interference does not exist on an incident particle path; the structure is convenient to install, corresponding operation is adopted, and detector packaging can be effectively completed.

The application discloses a novel ray detector, characterized in that the novel ray detector comprises a Cerenkov radiation material window, a photocathode surface plated on a light exit surface of the Cerenkov radiation material window, a microchannel plate and a readout circuit board; wherein the Cerenkov radiation material window is a glass optical fiber panel, used for receiving incident gamma rays and inputting Cerenkov light generated by the incident gamma rays into a fiber core to the photocathode surface; the photocathode surface is used for converting the Cerenkov light into photoelectrons and transmitting the photoelectrons to the microchannel plate through a vacuum electric field; and the microchannel plate is used for inputting the received photoelectrons into the readout circuit board after amplification by multiplication. The application can realize better position resolution.

The invention provides a method for rapidly forming and processing a V-shaped channel micropore array optical element on a single transparent glass substrate and the prepared micropore array optical element, and the method comprises the following steps: carrying out synchronous laser drilling on a vertically placed glass sheet by adopting inclined double laser processing heads positioned on the same horizontal base line by utilizing a laser-induced etching technology; and then carrying out wet etching treatment, and rapidly forming and processing the V-shaped channel micropore array optical element on a single transparent glass substrate. The structure of the V-shaped channel is controlled by independently regulating and controlling the inclined angle, the wire length, the energy and the focus processing parameters of laser emitted by each laser processing head; the problems that a traditional straight-channel micro-channel plate is large in positive ion feedback noise, multiple stacked V-shaped and Z-shaped micro-channel plates are poor in position resolution time response performance, and a hot-melt pressure bending micro-channel plate is poor in curvature consistency are solved, and the micro-channel plate can be applied to the field of photoelectric detection imaging requiring low ion feedback, ultrahigh gain and fast time response.

The application relates to a method for processing muon detection data of a triangular prism scintillator. S1: obtaining uncorrected energy deposition information and uncorrected hit position of each muon event in each layer detection unit; S2: based on the actual structure parameters of the detector, performing geometric correction on the traditional centroid algorithm; S3: based on the statistical relationship between the energy deposition of the muon in the scintillator and the track length, establishing a signal channel gain coefficient model, and correcting the energy response of each detection channel; S4: based on the fitting results of the muon track length and the energy of each channel, determining the energy consistency standard, and performing rejection processing on the muon events determined as abnormal; S5: performing muon track reconstruction and imaging, evaluating the position resolution of the detector, and if the convergence condition is reached, ending, otherwise returning to S2 for iteration. The technical scheme can improve the muon track reconstruction accuracy and imaging quality through geometric structure correction, energy correction and abnormal energy event screening.

The invention is entitled "Systems and methods for assisted navigation using distributed avionics processing." The invention discloses methods, systems, and non-transitory computer-readable media for distributed vehicle navigation processing for a vehicle. For example, the method can include, by the vehicle: obtaining reference data from one or a combination of an imaging system, an antenna system, and / or a radar system of the vehicle; in response to obtaining the reference data, determining whether a GNSS signal is below a threshold; and in response to determining that the GNSS signal is below the threshold, transmitting a navigation assistance request message including the reference data to an edge node or a cloud node. By the edge node or the cloud node: in response to receiving the navigation assistance request message from the vehicle, performing a position resolution process to determine and transmit a position of the vehicle by one or more functions. By the vehicle: performing a navigation control process based on the determined position.

This invention discloses a channel gain correction method and system for a multi-channel detector, relating to the field of nuclear radiation detection technology. The method includes: acquiring raw event data using a multi-channel detector; determining the energy of all channels triggered by the same event based on the action time; calculating the total energy value for each event using the energy of its respective channels, statistically analyzing all events to construct the total energy spectrum of the channel events, and setting an energy filtering window based on the position of the photoelectric peak in the total energy spectrum, retaining events within the energy filtering window as the valid event set; using an iterative algorithm to correct the channel gain coefficients, and monitoring the energy resolution in real time until convergence; applying the finally obtained gain coefficients to perform channel-level gain compensation on all raw event data, and outputting and displaying the corrected energy spectrum and gain distribution map. Gain correction can significantly improve the energy resolution and position resolution of the detector, enhancing the system's imaging quality and quantitative accuracy.

The utility model provides a camera lens device based on wavefront coding, and belongs to the technical field of optical detection. The camera lens device based on wavefront coding comprises a lens barrel and an industrial camera, the rear end of the lens barrel is connected with the industrial camera, an original infrared lens is installed in the lens barrel, a phase plate is fixed at the front end of the lens barrel, and a diaphragm is arranged between the phase plate and the original infrared lens. A phase plate is added, and the depth of field of the camera is expanded by using an encoding-decoding method, so that the measurement precision of the infrared deflection technology is improved; a wavefront coding method is adopted, so that the system is insensitive to defocus, and coding is realized by adding a phase plate into a camera lens; the phase plate is added, and the depth of field of the lens is expanded, so that in infrared deflection measurement, the camera can clearly image the measured lens and the light source, the position resolution and the angle resolution are improved, and the surface type reconstruction precision is improved.

The present application relates to the technical field of detector, and provides a preparation method of a radiation-resistant silicon carbide detector chip containing a transparent electrode and application thereof, the chip is a vertically incident detector chip from the top surface, and from top to bottom includes a first electrode, a transparent electrode, an ohmic contact layer, an intrinsic layer, a silicon carbide substrate and a second electrode; the first electrode is in a whole annular structure, the annular part of the first electrode is located at the edge of the transparent electrode and is in ohmic contact with the first electrode; an electric dipole layer is formed between the transparent electrode and the ohmic contact layer, for receiving photons or high-energy particles and performing carrier transport. The silicon carbide detector chip prepared in the present application can not only meet the application requirements of heavy ion detection, nuclear reactor detection and performance test of silicon carbide detector based on transient current technology (TCT) of ultraviolet laser, but also significantly improve the time resolution performance and position resolution performance of the silicon carbide detector to the passing particles.

The invention discloses a dual-motor windshield wiper position estimation and synchronous control system and method and a windshield wiper system, and the system comprises a sampling processing layer which is configured to be used for collecting current signals and PARK switching signals of dual motors; the fusion estimation layer is connected with the sampling processing layer and is configured to be used for executing current signal processing, position pulse extraction, periodic learning and fusion position estimation and outputting normalized phase values of the double motors; and the synchronous control layer is connected with the fusion estimation module, and is configured to calculate the phase error of the double motors, execute PI adjustment and feedforward collision avoidance control according to the error size and a risk window, and generate a PWM control signal for driving the double motors. According to the dual-motor windshield wiper system adopting the system, the position resolution is greatly improved, fusion positioning is stable and reliable, synchronous control is rapid and accurate, cost is low, adaptability is high, and meanwhile fault diagnosis and safety protection are enhanced.

The invention relates to a high-resolution crystal imaging detector signal processing method and system. The method comprises the following steps: acquiring a plurality of high-sampling-rate crystal signal waveforms; integral value calculation is carried out on the multiple crystal signal waveforms, and the multiple crystal signal waveforms are converted into corresponding position signals; mapping the plurality of position signals to the same image to obtain a crystal image; based on a neural network algorithm, multilayer convolution and pooling operation are carried out on crystal imaging, region boundary and structure information in the crystal imaging is extracted, pixel-level segmentation is carried out on the crystal imaging, a crystal array is obtained, and the neural network algorithm is obtained based on machine learning. The method obtains the crystal signal waveform with a high sampling rate to obtain the crystal image containing position information, improves the completeness of the signal waveform, effectively avoids information loss, carries out the pixel-level segmentation of the crystal image through employing a neural network algorithm, improves the position resolution, reduces the edge crystal adhesion, and improves the position definition of a crystal array.

This invention belongs to the field of sensor technology and is a self-powered vector displacement-vibration threshold monitoring sensor for mining applications. It solves the technical problems of insufficient spatial position resolution, accuracy, and real-time performance in existing vibration sensors. The top surface of the acrylic substrate fixing plate is covered with interdigitated electrodes and a P-type silicon layer. A polymer film is attached to the top surface of the interdigitated electrodes, and a gold back electrode is attached to the bottom of the P-type silicon layer. A collecting electrode is attached to the side wall of the acrylic substrate moving plate, and a friction electrode is attached to the bottom surface of the acrylic substrate moving plate. An AC circuit is connected between the two poles of the interdigitated electrodes, a first DC circuit is connected between the collecting electrode and the friction electrode, and a second DC circuit is connected between the friction electrode and the gold back electrode. This invention can monitor the direction of vibration and determine the spatial position by judging the forward and reverse displacement within a safe area. It responds promptly and sensitively to sudden signal changes, thus achieving highly sensitive vibration threshold monitoring.

The invention provides a block-type irresistible cathode silicon drift detector, which adopts a block-type irresistible cathode, expands outwards in a spiral irresistible manner, increases the length of each circle and widens the width at the same time, and retains the autonomous voltage division characteristic of the whole spiral ring, so that the whole detector is formed by combining a plurality of blocks. Each block can independently regulate and control the cathode potential, so that uniform and non-interfering independent transverse electric field distribution is formed, electron drift path distortion is effectively reduced, a variant is designed, a center collection anode is optimized into a distributed anode array surrounding the whole perimeter of the detector, and the detection efficiency is improved. According to the design, the large-area SDD can provide accurate position resolution through multi-channel signal acquisition reading and position analysis.

The invention discloses a high-energy photon track detector structure in a space environment, and belongs to the field of high-energy physics. The high-energy photon track detector structure comprises a cesium iodide module and a silicon micro-strip detection module, the cesium iodide module comprises a cesium iodide crystal; the silicon micro-strip detection module comprises a plurality of detection layers; the detection layer comprises two detection surfaces formed by a plurality of silicon micro-strip detectors which are arranged in parallel; the silicon micro-strip detector comprises a plurality of silicon wafers which are arranged in a strip shape; in the detection layer, the two detection surfaces are arranged in parallel, and the arrangement directions of the silicon micro-strip detectors of the two detection surfaces are perpendicular to each other; the plurality of detection layers are arranged in parallel and are vertically distributed; and the cesium iodide crystal is arranged above the plurality of detection layers. The track detector provided by the invention has high position resolution and can stably operate in a space environment.